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1
Hockett, R. S. "Txrf Semiconductor Applications." Advances in X-ray Analysis 37 (1993): 565–75. http://dx.doi.org/10.1154/s0376030800016116.
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This is a review of Total reflection X-Ray Fluorescence (TXRF) applications for semiconductors. This review is limited to surface analysis of contamination for semiconductors and does not include chemical analysis in semiconductor processing. TXRF for surface analysis is a relatively new technology. One of the first publications occurred in 1986 using synchrotron radiation. Publications using commercially available TXRF instruments for semiconductor applications began in 1988. Today there are on the order of 100 TXRF instruments worldwide in the semiconductor industry. Since 1988 there have been about 100 publications in this field, but this number does not include numerous abstracts and publications in Japan where the majority of the commercial instruments are found today. The commercial instruments were developed for the primary application of characterizing the cleaning of planar silicon wafers, however, numerous unforeseen applications were developed by users and many of those applications are reported here. In essence TXRF has much broader application today in the semiconductor industry than supporting the cleaning of silicon wafers.
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Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.
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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.
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Zhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry." E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.
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With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the third generation semiconductors and the second as well as the first generation semiconductors is made in this paper. Through the comparison of physical characteristics, recent marketing, production and limitations, the advantages and disadvantages of each semiconductor is analyzed and the suggestion of how to avoid the disadvantage through application is proposed. At last, the future development is predicted. According to the analysis result of this paper, silicon poses more merits. Silicon is not only cheaper but also performs better making it a preference of GaAs, and GaN in the domain of IC. The second generation semiconductor, GaAs, is widely used in the circuits and photoelectric integration. Furthermore, the third semiconductor material GaN is a promising material for power switching and communication and has the great possibility to play a crucial role in market.
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ADOM-BAMFI, GIDEON, DANIEL OPOKU, and BENJAMIN KOMMEY. "WELCOMING THE SEMICONDUCTOR INDUSTRY IN GHANA: CHALLENGES AND RECOMMENDATIONS – A CASE STUDY." Journal of Engineering Studies and Research 26, no. 4 (January 8, 2021): 27–33. http://dx.doi.org/10.29081/jesr.v26i4.232.
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The Semiconductor Industry is one industry that has been driving technological innovations for decades since its birth in the USA. Semiconductors form the building blocks of a wide array of consumer, medical and industrial electronics. The growth of many economies in the world can be attributed to the growth in the semiconductor industry in such countries. The global semiconductor industry consists of companies in the USA, South Korea, Taiwan, China, and the European Union. However, the semiconductor industry has no presence in the African region, in Ghana to be specific. This work investigates some challenges associated with the establishment of the semiconductor industry in Ghana, including challenges from basic research and development to manufacturing and marketing. The paper also highlights some recommendations which are key in laying the foundation for the entry of the industry in Ghana, including the provision of tax incentives, training of personnel, etc.
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Vagliasindi, Federico G. A., and Susan R. Poulsom. "Waste Generation and Management in the Semiconductor Industry: A Case Study." Water Science and Technology 29, no. 9 (May 1, 1994): 331–41. http://dx.doi.org/10.2166/wst.1994.0501.
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The production of semiconductors is an extremely complex process involving the deposit of several layers on silicon wafers, patterning the layers through photolithography and adding dopants to alter the conductivity. The process generates gaseous, liquid and solid waste streams consisting of many diverse and toxic components including toxic organics, variable pH, fluoride and arsenic. This paper presents the results of a study which investigated the manufacturing processes of semiconductors, including: generated pollutants, applicable regulations in the USA, waste minimization practices, and waste treatment and disposal alternatives. As part of this investigation, a case study was conducted on the waste generation and management of a semiconductor facility located in the USA.
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Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, Bernd Otto, Anna Paat, Oscar Alinabon, and Jing Li. "Wafer Level Packaging of Compound Semiconductors." Journal of Microelectronics and Electronic Packaging 7, no. 3 (July 1, 2010): 152–59. http://dx.doi.org/10.4071/imaps.263.
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The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes observed over the years in silicon semiconductor technologies. These industry changes include: the move from aluminum to copper interconnect metallurgy, increases in wafer size, decreases in pad pitch, and the use of Low-K dielectrics. In contrast, the direct transfer of these WLP technologies to compound semiconductor devices, like GaAs, SiC, InP, GaN, and sapphire; has been limited due to a number of technical compatibility issues, several perceived compatibility issues, and some business concerns From a technical standpoint, many compound semiconductor devices contain fragile air bridges, gold bond pads, topographical cavities and trenches, and have a number of unique bulk material properties which are sensitive to the mechanical and chemical processes associated with the standard WLP operations used for silicon wafers. In addition, most of the newer contract manufacturing companies and foundries have implemented mostly 200 and 300 mm wafer capabilities into their facilities. This limits the number of places that one can outsource the processing of 100 and 150 mm compound semiconductor wafers. Companies that are processing large numbers of silicon based semiconductor wafers at their facilities are reluctant to process many of these compound semiconductors because there is a perceived risk of cross contamination between the different wafer materials. Companies are not willing to risk their current business of processing silicon wafers by introducing these new materials into existing process flows. From a business perspective, many companies are reluctant to take the liability risks associated with some of the very high-value compound semiconductors. In addition, the volumes for many of the compound semiconductor devices are very small compared with silicon based devices, thus making it hard to justify interruption in the silicon wafer flows to accommodate these lower volume products. In spite of these issues and perceptions, the markets for compound semiconductors are expanding. Several high profile examples include the increasing number of frequency and power management devices going into cell phones, light emitting diodes, and solar cells The strategy for the work described in this paper is to protect all structures and surfaces with either a spin-on resist or a laminated film during each step in the process flow. These layers will protect the wafer from mechanical and chemical damage, and at the same time protect the fab from contamination by the compound semiconductor.
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Mercado, Alejandro Mercado, Manuel Martínez Facio, Fernando Favila Flores, and Ana García Moya. "Historia Y Evolución De La Industria De Semiconductores Y La Integración De México En El Sector." European Scientific Journal, ESJ 12, no. 18 (June 29, 2016): 65. http://dx.doi.org/10.19044/esj.2016.v12n18p65.
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Semiconductors and their applications, represent one of the technological revolutions with greatest impact on society, generating Industrial changes, new companies, jobs, professional careers and development of new products that have given a twist in the way of life of people around the world. This has produced an industrial war between developed countries, which dispute the first place in terms of production, import and export of semiconductors. The semiconductors industry has given way to agreements and alliances between countries; allowing México to participate on the import, export and the formation of research and development in the industry. The present research, have as an objective to review theoretically the historical evolution of the semiconductor industry and the incorporation of México in the sector.
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Berlin, Leslie R. "Robert Noyce and Fairchild Semiconductor, 1957–1968." Business History Review 75, no. 1 (2001): 63–101. http://dx.doi.org/10.2307/3116557.
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Robert Noyce's career at Fairchild Semiconductor sheds light on several developments that were central to the growth of Silicon Valley and the semiconductor industry: entrepreneurship, technical leadership, and the management of growth in a high-technology company. Noyce served as Fairchild Semiconductors first head of R&D and as its general manager for the six years of the company's most dramatic growth. His technical orientation, personal interest in new technologies, and hands-off management style helped establish a culture at the firm that welcomed innovations in research, process technology, manufacturing, and marketing. As Fairchild Semiconductor grew into a multidivisional mass producer, Noyce's entrepreneurial leadership proved inadequate. Communication breakdowns between divisions, coupled with a series of poor decisions by the parent company, further contributed to the decline of Fairchild Semiconductor.
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Alani, R., R. J. Mitro, and K. Ogura. "Reactive Ion Beam Etching (RIBE) Technique and Instrumentation for SEM Specimen Preparation of Semiconductors." Microscopy and Microanalysis 5, S2 (August 1999): 912–13. http://dx.doi.org/10.1017/s1431927600017888.
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Argon ion beam etching has established itself as an alternative technique to “wet chemical” etching for the preparation of cross sectional SEM specimens of semiconductors [1]. Complementing this technique, we are reporting the results of an iodine RIBE method for improved etching/cleaning capabilities with a measurable increase in etching rates as compared to argon ion beam etching. RIBE systems have been used for decades in the semiconductor research/industry for wafer processing, patterning and surface cleaning. This same technique has also been used for high quality TEM specimen preparation of certain semiconductor materials [2,3]. The beneficial aspects of the iodide RIBE technique for surface etching for a variety of semiconductor structures along with the related instrumentation will be discussed. The semiconductor specimens include traditional ICs and more advanced copper technology devices.The design and construction of the original system used in this work has already been reported [4].
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CHIU, Ching-Ren, Chen-Ling FANG, Seng-Su TSANG, and Yi-Fen CHEN. "PERFORMANCE EVALUATION OF THE SEMICONDUCTOR INDUSTRY BASED ON A METAFRONTIER APPROACH." Technological and Economic Development of Economy 24, no. 3 (May 11, 2018): 825–43. http://dx.doi.org/10.3846/20294913.2016.1218372.
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The semiconductor industry has been regarded as one of the most important industries by Taiwan due to the market share of Taiwan’s semiconductor industry in 2011 ranked second worldwide. However, the European debt crisis triggered a global economic recession in 2011, causing Taiwan’s output of semiconductors in 2010 and 2011 to show negative growth. This paper will mainly explore, from the performance evaluation perspective, the Malmquist productivity index of the Taiwan’s semiconductor industry based on a metafrontier approach. The empirical results show that the European debt crisis in 2011 had an impact on Integrated circuit (IC) design companies and IC manufacturing companies, but that there was no influence on IC packaging and testing companies when measuring static efficiency. From the viewpoint of dynamic productivity performance, the paper finds that the main reason for the negative growth of IC packaging and testing companies and IC design companies came from a backward movement in technical change, but the main reason for the negative growth of IC manufacturing companies derived from a decline in pure technical efficiency.
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Brinkman, W. F. "Electron Microscopy and the Electronics Industry: Partners in Development." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 12–13. http://dx.doi.org/10.1017/s0424820100178811.
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Since the invention of the transistor and the birth of the solid-state electronics industry, electron microscopy has been an integral part of the boom in the science and technology of semiconductors. The relationship has been symbiotic: the technique of microscopy has probably gained almost as much as the electronics industry from innovations. Historically, semiconductor research has always come down to a question of the growth of perfect materials with perfect interfaces, and microscopic analysis below the optical level has been essential to improvements. When applications for the semiconductors germanium and silicon were discovered in solid-state devices, its became necessary to grow high-quality single crystals free of defects. A lot of work at Bell Labs and other institutions was directed at understanding the behavior of dislocations in crystals. Bill Schockley, a co-inventor of the transistor, is well-known for his contributions to dislocation theory, particularly dislocation dissociation in semiconductors. Bob Heidenreich, from Bell Labs, contributed much to the early stages of microscopy of defects and dislocations. The need for dislocation-free material generated extensive efforts around the world which led to the growth of high-purity single-crystal silicon in the 1960’s. Silicon is now the highest quality and purest material available, and also the cheapest in single-crystal form.
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Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.
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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fabrication of semiconductor devices. This chapter deals with diffusion and point defects in silicon and germanium. It aims at making the reader familiar with the present understanding rather than painstakingly presenting all diffusion data available a good deal of which may be found in a data collection by Stolwijk and Bracht [1], in the author’s textbook [2], and in recent review papers by Bracht [3, 4]. We mainly review self-diffusion, diffusion of doping elements, oxygen diffusion, and diffusion modes of hybrid foreign elements in elemental semiconductors.Self-diffusion in elemental semiconductors is a very slow process compared to metals. One of the reasons is that the equilibrium concentrations of vacancies and self-interstitials are low. In contrast to metals, point defects in semiconductors exist in neutral and in charged states. The concentrations of charged point defects are therefore affected by doping [2 - 4].
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Radamson, Henry H., Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, et al. "State of the Art and Future Perspectives in Advanced CMOS Technology." Nanomaterials 10, no. 8 (August 7, 2020): 1555. http://dx.doi.org/10.3390/nano10081555.
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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.
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Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.
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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).
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Rose, Simone A. "Semiconductor Chips, Genes, and Stem Cells: New Wine for New Bottles?" American Journal of Law & Medicine 38, no. 1 (March 2012): 113–57. http://dx.doi.org/10.1177/009885881203800102.
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This Article analogizes early semiconductor technology and its surrounding economics with isolated genes, stem cells, and related bioproducts, and their surrounding economics, to make the case for sui generis (of its own class) intellectual property protection for isolated bioproducts. Just as early semiconductors failed to meet the patent social bargain requiring novelty and non-obviousness in the 1980s, isolated genes and stem cells currently fail to meet the patent bargain requirements of non-obviousness and eligible subject matter that entitle them to traditional intellectual property protection. Like early semiconductor chip designs, nevertheless, the high cost of upstream bioproduct research and development, coupled with the need to sustain continued economic growth of the biotechnology industry, mandates that Congress provide some level of exclusive rights to ensure continued funding for this research. Sui generis intellectual property protection for isolated bioproducts would preserve the incentive to continue innovation in the field. As illustrated by the semiconductor industry, however, such sui generis protection for this technology must include limitations that address the need to provide an appropriate level of public access to facilitate downstream product development and enrich the public domain.
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Keller, William W., and Louis W. Pauly. "Crisis and Adaptation in East Asian Innovation Systems: The Case of the Semiconductor Industry in Taiwan and South Korea." Business and Politics 2, no. 3 (November 2000): 327–52. http://dx.doi.org/10.2202/1469-3569.1014.
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In recent decades, both South Korea and Taiwan have made remarkable leaps in the development and production of semiconductors-the core element in burgeoning global telecommunications, computer, and computer equipment industries. Although many aspects of their sectoral industrial strategies have differed, both countries are now moving aggressively to adapt their semiconductor industries to turbulent global markets. In the wake of the severe regional financial crisis that began in 1997, this case study compares and contrasts continuing processes of adaptation among primary semiconductor manufacturers in the two countries. The crisis had observable effects, especially in Korea, but it was not deep enough to force fundamental adjustments in either country. In the early days of the industry in both places, a sense of vulnerability-the need to come from behind-gave rise to quite different corporate structures and attendant strategies. Remarkable differences persist in the ways in which the South Korean and Taiwanese semiconductor firms are seeking new advantages in rapidly changing regional and global markets. Strategic change and structural continuity mark the attempt of two relatively small countries to stay competitive in a key industry.
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McDonald, Robert C., A. John Mardinly, and David W. Susnitzky. "Imaging and Analytical Challenges for Nanoscale Semiconductor Technology: Breakthrough Needs for Development and Manufacturing." Microscopy and Microanalysis 3, S2 (August 1997): 449–50. http://dx.doi.org/10.1017/s1431927600009132.
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The complexity of today’s commercial semiconductors has contributed to tremendous gains in device performance; millions of transistors are now packed into each square centimeter of silicon. The reduction of scale occurring within the semiconductor industry places extraordinary new demands on transmission electron microscopy: TEM is becoming a required precision measurement tool for manufacturing and a necessary analytical tool for R&D and failure analysis support. This paper reviews the industry’s needs for advanced TEM sample preparation, imaging and microanalysis and outlines the challenges presented to the TEM community as device dimensions continue along the National Technology Roadmap.In the semiconductor industry, TEM is applied to process debugging, yield engineering, tool qualifications, single-bit failure analyses, and new process development. A large fraction of the analysis effort focuses on transistor, metal, interconnect and dielectric structures grown on and into the Si wafer. Fig. 1 shows a TEM image of a multilayer metal in a near-current generation microprocessor to illustrate the scale and nature of complexity.
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Venables, D. "Scanning Electron Microscopy of Dopants in Semiconductors." Microscopy and Microanalysis 4, S2 (July 1998): 644–45. http://dx.doi.org/10.1017/s1431927600023345.
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It has been demonstrated that doped regions in semiconductors yield contrast in secondary electron images taken under appropriate imaging conditions. Perovic et al. attributed this "electronic" contrast to surface potentials arising from the bending of the energy bands at the surface of the semiconductor. This band-bending results from the presence of surface states which pin the Fermi level. These effects have found application to an important problem in the electronics industry -- the profiling of dopant distributions in two-dimensions. However, such dopant distributions are rarely uniform, i.e., the dopant concentration may change over many orders of magnitude within distances of only a few tens to hundreds of nanometers. Therefore, it is necessary to understand how the observed contrast from the doped regions varies for non-uniform dopant distributions to apply the technique to real electronic devices.
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Keller, William W., and Louis W. Pauly. "Innovation in the Indian Semiconductor Industry: The Challenge of Sectoral Deepening." Business and Politics 11, no. 2 (August 2009): 1–21. http://dx.doi.org/10.2202/1469-3569.1270.
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Seeking to build on related successes in other information technology sectors, the government of India has signaled its intent to transform the country's performance in microelectronics. Facing a young and expanding population, India needs to create manufacturing jobs in promising industries, and it needs to build out from its limited high-technology base. Semiconductors are foundational in this regard. Today, there is much discussion within India about the link between semiconductors and innovation in bio-electronics, alternative energy production and storage, and various micro- and nano-devices. The government's contemporary attempt to promote the building of infrastructure for manufacturing and applied research in semiconductors highlights reasons for hope. So too does the remarkable talent now available in the Indian diaspora. But significant impediments, especially in postsecondary and graduate-level education, must still be overcome if the necessary human capital is to be developed, equipped, and deployed effectively.
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V Krishnaiah, R., T. Anil, Mode Laxmana Rao, Paparao Nalajala, and SK Hasane Ahammad. "Implementation of logic gates using CNFET for energy constraint applications." International Journal of Engineering & Technology 7, no. 1.1 (December 21, 2017): 355. http://dx.doi.org/10.14419/ijet.v7i1.1.9852.
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Since the advent of semiconductors and throughout the history of designing ICs in VLSI for everything from computer hardware to mobile phones, the basic principle of Moore's law has persisted to be the same the number of transistors on a given area of silicon doubles every two years. The transistor rely on today's propelled multicore processors will be arriving at those extent about three billions, a in length best approach starting with the 6800 processor of the mid 1970s which comprised of Exactly 5000 transistors. Semiconductor manufacturing commercial enterprises need aid supporting of the most extreme degree to make this Growth feasible by presenting scaled CMOS gadgets utilizing field impact transistor (FET) technology, the place the most recent hub adequately multiplied those entryway thickness contrasted with those past era each few for A long time. As the approach will be crashing towards sub-nano meter reach that is past 90-nm node, spillage turned into a paramount element. Same time those MOS gadgets arrived at the end of its versatile limit, those semiconductor industry found elective gadget for example, such that CNFET (carbon nano tube field impact transistor), which will be acknowledged to the best decision for following era units. Large portions semiconductor commercial enterprises need aid placing their deliberations On CNFET innovation.
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Shifa, Tofik Ahmed. "Nanostructured Crystalline Semiconductors: Structure, Morphology and Functional Properties." Crystals 11, no. 7 (June 25, 2021): 736. http://dx.doi.org/10.3390/cryst11070736.
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Han, Jing, and Tae-hee Lee. "An Analysis of Success Factors in the Semiconductor Industry in Korea and China : Focused on Memory Semiconductors." INTERNATIONAL BUSINESS REVIEW 24, no. 3 (September 30, 2020): 137–47. http://dx.doi.org/10.21739/ibr.2020.09.24.3.137.
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Kishi, Yukio, Katsuhiko Ogura, Kiichiro Kamata, Hidetoshi Saitoh, and Keizo Uematsu. "High Strength, Electrically Conductive Pore-free TiO2 Ceramics made by Hot Isostatic Pressing." Journal of Materials Research 12, no. 4 (April 1997): 1056–61. http://dx.doi.org/10.1557/jmr.1997.0147.
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A high-purity, single-phase TiO2 ceramic with high density, strength, and electrical conduction was developed as a key structural material for the production equipment of semiconductors. Green bodies were made of high purity rutile TiO2 of very fine powder. They were sintered in air at 1200 °C for 2 h and then were hot isostatically pressed (HIPed) in argon at 1000 °C, 150 MPa for 2 h. HIPed TiO2 ceramics were found to be electrically conductive and pore free. Their relative density, specific resistance, and bending strength were 100%, 1 Ω ·cm, and 300 MPa, respectively. No strength degradation was found to the temperature up to 1000 °C. This material has high potential for use as electrically conductive structure materials in the semiconductor industry.
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Tracy, Bryan M. "Semiconductor Microscopy - Microscopy at the Instrumental Performance Limit." Microscopy and Microanalysis 7, S2 (August 2001): 512–13. http://dx.doi.org/10.1017/s1431927600028634.
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The microscopy to support process development of Si-based semiconductors has consistently required state-of-the-art instrumentation. As the industry strains to achieve 1 OOnm design rules, this requirement has never been more pronounced. This paper presents TEM, SEM and FIB examples with a focus on using the instrumentation near the performance limit.Transmission Electron Microscopy - The high contrast and high resolution images provided by the TEM have made this “research instrument” into the mainstay of the semiconductor analysis laboratory. For the vast majority of samples, both plan view and cross sections, precious little tilt is required. For cross sections, +/- 3 degrees is usually adequate to bring the silicon into (110) orientation and plan views are commonly made from polycrystalline films, which benefit more from choosing the right thickness than from tilt. Under appreciated is the benefit of very high resolution polepieces which have superior spherical and chromatic aberration coefficients producing real improvements in image quality.
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Caswell, Greg. "Surviving the Heat Wave – A presentation on thermally induced failures and reliability risks created by advancements in electronics technologies." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000631–34. http://dx.doi.org/10.4071/isom-2017-tha54_042.
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Abstract Since the advent of surface mount technology back in the 1970's we, as an industry, have continually worked to miniaturize our products. This evolution of product design has impacted us at the semiconductor, package, circuit board and system levels. So, the question is, Why do Electronics Fail Under Thermal Cycling? At the semiconductor level, you can have issues with delamination, IC complexity, degradation mechanisms, associated ceramic capacitor wearout, and electrical overstress (EOS). At the package level issues with bond wires and stacked die add to the reliability impact. At the printed circuit board level issues with solder wearout, solder phase coarsening, PWB laminates and glass materials, plated through hole (PTH) fatigue, and the impact of potting can also affect reliability while at the system level, heat sinks and other methods of heat removal can improve the situation. What drives these issues is that we use a variety of materials e.g. semiconductors, ceramics, metals and polymers. We then bond them together with other materials like solder and adhesives. Each of these materials has a Coefficient of Thermal Expansion (CTE) that is unique and therefore expands and contracts at different rates.
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Mardinly, John. "The Effect of Moore&s Law on the Growing Role of Transmission Electron Microscopy in the Semiconductor Industry." Microscopy and Microanalysis 7, S2 (August 2001): 510–11. http://dx.doi.org/10.1017/s1431927600028622.
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TEM has been used for semiconductor device characterization since the 1980's, when Marcus and Cheng first demonstrated the feasibility and utility of applying TEM to semiconductors. The frequency of use of TEM has accelerated briskly due to the continual shrinkage of devices as predicted by Gordon Moore and now documented in the SIA roadmap (http://public.itrs.net/Home.htm). TEM use has also grown due to application of FIB techniques which make possible high precision cross-sections of specific structures. This relentless shrinking has resulted in difficulties in preparing suitable specimens. Many of the features and interfaces in a device may be curved rather than planar, and as the radius of curvature begins to approach the thickness of a TEM specimen, it can result in “geometrical blurring” of features, both for imaging and microanalysis. The origin of this blurring is illustrated in Figure 1, where it can be seen that a single electron may pass through two different features, and as a result, they are not resolved.
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Garner, C. Michael. "Lithography for enabling advances in integrated circuits and devices." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 370, no. 1973 (August 28, 2012): 4015–41. http://dx.doi.org/10.1098/rsta.2011.0052.
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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.
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Ellyana, Kharisma Madda, Kharisma Luthfiaratri Rahayu, Ratri Febriastuti, and Abdul Haris. "Cassava Skin Usage (Manihot esculenta L.) as Photocatalyst for Degradation of Methylene Blue in the River of Textile Industrial Zone." Jurnal Kimia Sains dan Aplikasi 21, no. 4 (October 21, 2018): 232–36. http://dx.doi.org/10.14710/jksa.21.4.232-236.
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The progress of the textile industry can increase the amount of dyestuff waste, but often waste disposal is overlooked. The purpose of this research is to provide solution in handling river water pollution by textile industry dye waste. The degradation of textile industry dye waste can be done with TiO2 semiconductors with UV light as a source of irradiation, but only 5% of sunlight can be utilized TiO2 to excite its electrons, so degradation process is not effective. It needs a material that can optimize the activity of TiO2 semiconductor, one of them C-dot coming from cassava skin. The results obtained in this research were TiO2/C-dot composite which could degrade methylene blue where its effectiveness was tested using UV-Vis spectrophotometer instrument. TiO2/C-dot photocatalyst activity test for methylene blue 0.0001 M showed that the concentration of 20% with the amount of degradation up to 96,99%, best type of rays was sunshine with amount of degradation up to 66,25% and longest radiation in sunshine with the amount of degradation was up to 78.77% and UV with the amount of degradation up to 75.99%.
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Diehl, P., M. R. McCartney, and David J. Smith. "Effects of electron irradiation on alkaline earth fluorides." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 794–95. http://dx.doi.org/10.1017/s0424820100177106.
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Alkaline earth fluorides are important materials in the electronics industry because of their use in the epitaxial growth of semiconductor-on-insulator (SOI) devices. Their main advantages are their close lattice match with the common semiconductors, and the fact that they evaporate as molecular units upon heating which implies good control of film stoichiometry in Molecular Beam Epitaxy. More recently, further interest has developed relating to their use in nanolithography because they are materials which can be suitably patterned with an electron beam in device processing.Moreover, some inorganic fluorides potentially offer inherently higher resolution than resists so far used.Various studies have been made on the effects of irradiation on these Group IIA fluorides. It has also been noted during electron microscope characterization of the SOI structures that these fluorides are very easily damaged. Since image detail is lost, it has been suggested that the fluorides are becoming amorphous.
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IBRAHIM, M., HAYAT ULLAH, SAEED ULLAH JAN, MANZAR ALI, and M. GULBAHAR ASHIQ. "STRUCTURAL PARAMETERS AND OPTOELECTRONIC PROPERTIES OF Mg-IV-V2 (IV=Si, Ge, Sn AND V=P, As) COMPOUNDS." Surface Review and Letters 25, no. 05 (July 2018): 1850108. http://dx.doi.org/10.1142/s0218625x18501081.
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Semiconductors are the backbone of the optoelectronic industry. Direct band gap materials in the visible energy region are highly desirable for the efficient optoelectronic applications. In this work, we have probed the structural, electronic and optical properties of Mg-IV-V2 (IV[Formula: see text]Si, Ge, Sn and V[Formula: see text]P, As) compounds by FP-LAPW calculations, based on density functional theory. Their crystal structure is chalcopyrite with space group of I-42d. The lattice constants of MgSiP2, MgSiAs2 and MgGeAs2 are consistent with experimental results. These compounds show semiconductor behavior with direct band gap ranging from 1.3–2.15[Formula: see text]eV. Optical properties were also investigated. Optical properties include real and imaginary parts of dielectric constant, energy loss function, refraction and reflection. Direct band gap nature and good response in the visible region of these compounds predict their usefulness in optoelectronic devices.
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Hasegawa, Hideki, Hajime Fujikura, and Hiroshi Okada. "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires." MRS Bulletin 24, no. 8 (August 1999): 25–30. http://dx.doi.org/10.1557/s0883769400052866.
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A scaling-down of feature sizes into the nanometer range is a common trend in silicon and compound semiconductor advanced devices. That this trend will continue is clearly evidenced by the fact that the “roadmap” for the Si ultralarge-scale-integration circuit (USLI) industry targets production-level realization of a 70-nm minimum feature size for the year 2010. GaAs- and InP-based heterostructure devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have made remarkable progress by miniaturization, realizing ultrahigh speeds approaching the THz range with ultralow power consumption. Due to progress in nanofabrication technology, feature sizes of scaled-down transistors are rapidly approaching the Fermi wavelength of electrons in semiconductors, even at the production level. This fact may raise some concerns about the operation of present-day devices based on semiclassical principles.However, the progress of nanofabrication technology has opened up the exciting possibility of constructing novel quantum devices, based directly on quantum mechanics, by utilizing artificial structures such as quantum wells, wires, and dots. In these structures, new physical effects appear, such as the formation of new quantum states in single and coupled quantum structures, artificial miniband formation in superlattices, tunneling and resonant tunneling in single and multiple barriers, propagation of phase-coherent guided electron waves in quantum wires, conductance oscillations in small tunnel junctions due to single-electron tunneling, and so on. We expect that these effects will offer rich functionality in next-generation semiconductor quantum ULSIs based on artificial quantum structures, with feature sizes in the range of one to a few tens of nanometers. Beyond this, molecular-level ULSIs using exotic materials and various chemical and electrochemical processes other than the standard semiconductor ones may appear, butat present, they still seem to be too far in the future for realistic consideration for industrial applications.
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Chang, Shu-Hao. "Revealing Development Trends and Key 5G Photonic Technologies Using Patent Analysis." Applied Sciences 9, no. 12 (June 21, 2019): 2525. http://dx.doi.org/10.3390/app9122525.
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In recent years, 5G photonic technology has gradually gained increased attention from scholars. However, studies on 5G photonic technology have mostly focused on technological discussions or market development research, but have failed to identify the relevant key technologies from a comprehensive perspective. In particular, 5G photonic technology is an interdisciplinary technology that could create considerable potential business opportunities in the future, therefore, identifying related key technologies is crucial. Accordingly, the patents of 5G photonic technologies were used as the basis for analysis in this study, and a patent technology network for such technologies was constructed using network analysis. The results showed that the key technologies of 5G photonic technology are mainly related to optics, nanostructures, semiconductors, and material analysis, indicating an interdisciplinary feature instead of focusing only on one specific technological field. Additionally, the relevant technologies that have seen active development in recent years are mainly related to optical elements and semiconductor devices. Finally, a patentee analysis demonstrated that information technology companies were the key players in the development of 5G photonic technologies, and the semiconductor industry will have a crucial role in the development of such technologies. In this study, a patent technology network model was constructed to explore the development trend of 5G photonic technologies, thereby providing a reference for the government to promote these emerging technologies.
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Moody, Kevin, and Nick Stukan. "Embedded SIP Modules for next-GEN Heterogeneous “POWER-Devices”." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 000383–407. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_073.
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In this paper will focus on the comprehension of System-in-Package (SiP) with embedded active and passive components integration will be described. Embedding of semiconductor chips into substrates provides many advantages that have been noted. It allows the smallest package form-factor with high degree of miniaturization through sequentially stacking of multiple layers containing embedded devices that are optimized for electrical performance with short and geometrically well controlled copper interconnects. In addition, the embedding gives a homogeneous mechanical environment of the chips, resulting in good reliability at system level. Furthermore, embedded technology is an excellent resolution to Power management challenges dealing with new device technologies (Si, GaS, GaN) and optimization on the thermal dissipation with improved efficiency. Embedded technology comes with many challenges in 2019, primarily design for manufacturability (DFM) and maturity. Customers are looking for better-performance capability and pricing normally that means same or lower than die free package cost (DFPC) comparison. This paper will discuss the challenges bring to market the Embedded SIP Modules for next-GEN Heterogeneous “POWER-Devices” Today, the embedded process is being developed by printed circuit board (PCB) manufacturers creating a new supply chain, bringing new players into the semiconductor industry. This new supply chain comes along with new business models. As a result of the increasing interest in implementing embedding technologies, ACCESS Semiconductors in China is committed to be a leader in the adaptation of embedding technologies, with over 10-yrs mature coreless technology and proved design rules for low profile dimensions with seamless Ti/Cu sputtering and Cu pillar interconnect giving advantages in both electrical & power performance. ACCESS Patented “Via-in-Frame” technology provides High Reliability (MSL1, PCT, BHAST) at Cost Effective in high panel utilization for HVM, using standard substrate/PCB known material sets, no need for wafer bumping/RDL, over-mold or under-fill cost adders. ACCESS Semiconductors is currently in HVM on single die 2L, and LVM on multi-devices actives/passives 4L SiP construction both platforms are driven from the power market segment. In-development on Die Last & Frameless (MeSiP) platforms utilizing hybrid technology (mSAP) and Photo Imageable Dielectric (PID) materials for cost down solutions in HVM by Q1FY2020. Also, ACCESS Semiconductors total turn-key solutions will include front-of-line (FOL) and end-of-line (EOL) capability from wafer handling, back-grinding, and dicing with KGD traceability thru the embedded chip process, frame/strip singulation, FT, marking pack & ship providing additional 30% cost reduction in the future. Here's an illustration of Embedded Technology Roadmap and Product Platforms.
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Hussin, Rosniza, Xiang Hui Hou, and Kwang Leong Choy. "Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition." Defect and Diffusion Forum 329 (July 2012): 159–64. http://dx.doi.org/10.4028/www.scientific.net/ddf.329.159.
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Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.
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Phillips, M. R., A. R. Moon, M. A. Stevens Kalceff, and G. Remond. "Design, Construction and Applications of a Low Temperature (5 K) Combined Scanning Cathodoluminescence and WDS X-ray Spectroscopy and Imaging System." Microscopy and Microanalysis 3, S2 (August 1997): 1069–70. http://dx.doi.org/10.1017/s143192760001223x.
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Recently there has been a renaissance in scanning cathodoluminescence (CL) microscopy and microanalysis primarily brought about by the analytical demands of the semiconductor industry in addition to significant advances in photonics technology (high efficiency PMTs, CCDs and CL collectors). The strength of the CL analysis technique lies in its ability to provide high spatial (lateral and depth) resolution concentration and distribution information about: (i) the chemical state (identity, oxidation state and co-ordination) of trace level impurities and (ii) point / extended structural defects (vacancies and dislocations) in both semiconductors and insulators.For many materials, interpretation of CL spectra and images measured at low temperature (5 K) is quite straightforward. However CL generation via recombination of electron / hole pairs is a competitive process. Consequently in some specimens the measured CL intensity is not directly proportional to the concentration of the particular luminescent center but relates to the concentration of other radiative or non-radiative centers. In these cases it is difficult to decide whether contrast in the CL image is due to variation in the concentration of the radiative center or the competitive center.
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Chang, Yu-Chung, Yu-Kai Wang, Yen-Ting Chen, and Der-Yuh Lin. "Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy." Nanomaterials 10, no. 3 (March 14, 2020): 526. http://dx.doi.org/10.3390/nano10030526.
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Although large-scale synthesis of layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) has been made possible, mechanical exfoliation of layered van der Waals crystal is still indispensable as every new material research starts with exfoliated flakes. However, it is often a tedious task to find the flakes with desired thickness and sizes. We propose a method to determine the thickness of few-layer flakes and facilitate the fast searching of flakes with a specific thickness. By using hyperspectral wild field microscopy to acquire differential reflectance and transmittance spectra, we demonstrate unambiguous recognition of typical TMDCs and their thicknesses based on their excitonic resonance features in a single step. Distinct from Raman spectroscopy or atomic force microscopy, our method is non-destructive to the sample. By knowing the contrast between different layers, we developed an algorithm to automatically search for flakes of desired thickness in situ. We extended this method to measure tin dichalcogenides, such as SnS2 and SnSe2, which are indirect bandgap semiconductors regardless of the thickness. We observed distinct spectroscopic behaviors as compared with typical TMDCs. Layer-dependent excitonic features were manifested. Our method is ideal for automatic non-destructive optical inspection in mass production in the semiconductor industry.
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Queisser, Hans J. "Order and Disorder in Semiconductors." MRS Bulletin 20, no. 12 (December 1995): 43–49. http://dx.doi.org/10.1557/s0883769400045899.
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The pervasive impetus of modern semiconductor technology has become an accepted fact. Scientific mastering of materials and processes has increased tremendously within a short time frame. Technological control has been derived from this scientific base. An industry with more than $100 billion worth of silicon devices per annum in 1994 as well as incredibly high growth rates of production and applications is an economic reality in addition to being a matter of international industrial policy. The materials aspect of using perfected single crystals and applying local doping control provides the basis of this unusual success. Earlier usage of materials differed remarkably. Bronze and steel are used for their specific bulk properties. Shaping and connecting pieces is at the heart of iron-age or bronze-age technologies. Integration inside a regular spatial array of a host crystal is the semiconductor principle. The “Royal Road” to modern microelectronics consists of initially procuring a perfected single-crystal host, then locally establishing electrical and optical properties inside the host by specific replacements of host atoms by foreign “dopants.” The somewhat disparaging expression of defect as a generic term for all deviations from the host perfection does not really convey the power of this “doping doctrine” for semiconducting materials. The early pioneers of germanium and silicon however, placed great emphasis on the experimental verification that n-type and p-type doping by elements of the adjacent columns in the periodic table were accompanied by changes in the lattice parameter with atomic substitution of the host atoms as the guiding principle.
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Grätzel, Michael. "Photovoltaic and photoelectrochemical conversion of solar energy." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 365, no. 1853 (February 2007): 993–1005. http://dx.doi.org/10.1098/rsta.2006.1963.
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The Sun provides approximately 100 000 terawatts to the Earth which is about 10 000 times more than the present rate of the world's present energy consumption. Photovoltaic cells are being increasingly used to tap into this huge resource and will play a key role in future sustainable energy systems. So far, solid-state junction devices, usually made of silicon, crystalline or amorphous, and profiting from the experience and material availability resulting from the semiconductor industry, have dominated photovoltaic solar energy converters. These systems have by now attained a mature state serving a rapidly growing market, expected to rise to 300 GW by 2030. However, the cost of photovoltaic electricity production is still too high to be competitive with nuclear or fossil energy. Thin film photovoltaic cells made of CuInSe or CdTe are being increasingly employed along with amorphous silicon. The recently discovered cells based on mesoscopic inorganic or organic semiconductors commonly referred to as ‘bulk’ junctions due to their three-dimensional structure are very attractive alternatives which offer the prospect of very low cost fabrication. The prototype of this family of devices is the dye-sensitized solar cell (DSC), which accomplishes the optical absorption and the charge separation processes by the association of a sensitizer as light-absorbing material with a wide band gap semiconductor of mesoporous or nanocrystalline morphology. Research is booming also in the area of third generation photovoltaic cells where multi-junction devices and a recent breakthrough concerning multiple carrier generation in quantum dot absorbers offer promising perspectives.
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Olson, Tim. "Transforming Electronic Interconnect." International Symposium on Microelectronics 2017, S1 (October 1, 2017): 000080–108. http://dx.doi.org/10.4071/isom-2017-slide-4.
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From nanometers at the transistor level to 100's of microns at the ball grid array (BGA) connections, electronic interconnect of semiconductors spans orders of magnitude as it forms the central nervous system of today's advanced electronic products. Tectonic shifts are currently underway within the industries providing electronic interconnect. Traditional supply chain boundaries produce back end of line (BEOL) structures within wafer foundries ranging from 10's of nanometers to 10's of microns. First-level interconnect, or packaging, the classical purvey of semiconductor assembly and test services (SATS) providers operates in 10's to 100's of microns. Second-level interconnect, or board level assembly, historically rests with electronic manufacturing systems (EMS) providers measuring their work in 100's of microns and above. The transformation underway in electronic interconnect will redefine historical supply chain boundaries as it blurs the lines between foundries, SATS and EMS providers. At the heart of the transformation is ‘fan-out’ technology moving from initial capacities in wafer form to an emerging format of large panels. Breaking through capital cost, reliability and yield concerns with novel solutions will open the door for widespread industry growth of fan-out.
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Speed, David, Paul Westerhoff, Reyes Sierra-Alvarez, Rockford Draper, Paul Pantano, Shyam Aravamudhan, Kai Loon Chen, et al. "Physical, chemical, and in vitro toxicological characterization of nanoparticles in chemical mechanical planarization suspensions used in the semiconductor industry: towards environmental health and safety assessments." Environmental Science: Nano 2, no. 3 (2015): 227–44. http://dx.doi.org/10.1039/c5en00046g.
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This tutorial review focuses on aqueous slurries of dispersed engineered nanoparticles (ENPs) used in chemical mechanical planarization (CMP) for polishing wafers during manufacturing of semiconductors.
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Agarwal, Anant, Woong Je Sung, Laura Marlino, Pawel Gradzki, John Muth, Robert Ivester, and Nick Justice. "Wide Band Gap Semiconductor Technology for Energy Efficiency." Materials Science Forum 858 (May 2016): 797–802. http://dx.doi.org/10.4028/www.scientific.net/msf.858.797.
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The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain industry acceptance. However, hurdles still exist in achieving widespread market acceptance, on a par with traditional silicon power devices. Primary challenges include reducing device costs and the expansion of a workforce trained in their use. The Department of Energy (DOE) is actively fostering development activities to expand application spaces, achieve acceptable cost reduction targets and grow the acceptance of WBG devices to realize DOEs core missions of more efficient energy generation, greenhouse gas reduction and energy security within the U.S. This paper discusses currently funded activities and application areas that are suitable for WBG introduction. A detailed cost roadmap for SiC device introduction is also presented.
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Oh, Jung-Min, Jaeyeol Yang, Jaesik Yoon, and Jae-Won Lim. "Effective Method for Preparing Low-Oxygen Titanium Ingot by Combined Powder Deoxidation and Vacuum Arc Melting Processes." Korean Journal of Metals and Materials 59, no. 3 (March 5, 2021): 149–54. http://dx.doi.org/10.3365/kjmm.2021.59.3.149.
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In this study, an effective method is demonstrated for fabricating titanium sputtering targets, which are used to fabricate thin films in the semiconductor industry. The method is an alternative to the existing electron beam melting (EBM) process under high vacuum. Titanium sputtering targets used in the production of semiconductors must have very low concentrations of gaseous impurities, especially oxygen, as well as metal impurities. Currently, the oxygen concentration in titanium sputtering targets used for industrial purposes is less than 400 ppm. To develop an effective alternative method, powder metallurgy and melting processes were performed to prepare a low-oxygen titanium ingot with less than 400 ppm oxygen. First, titanium powder was deoxidized using calcium vapor, and then the powder was subjected to vacuum arc melting (VAM). The oxygen in the titanium powder was reduced with calcium vapor from an initial concentration of 2200 ppm to 800 ppm, and the resulting powder was melted using VAM, resulting in titanium ingots with low oxygen content, 400 ppm or less. It was also confirmed that all lattice constants, i.e., <i>d, a, c,</i> and <i>c/a</i>, decreased as oxygen concentration decreased in both the titanium powder and the ingots.
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Papanu, Victor. "Comparative Test Data for TIM Materials for LED Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 000655–83. http://dx.doi.org/10.4071/2012dpc-ta41.
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Developments in thermal interface materials (TIMs) continue across the industry with a variety of different types of materials. Thermal and mechanical design engineers are often confronted with the need to select which type or category of TIM material is the most appropriate for a specific LED module application, which can be confusing, and how to determine which materials provide the best thermal performance. The next step is understanding which TIM material types meet requirements for ease of shipping, handling, placement, cost, and rework. These are important distinctions, in addition to thermal performance. This presentation will illustrate comparative testing results for a set of thermal interface materials (TIMs) in different categories, using different TIM testing procedures. Test data prepared using three different test methods will be compared:1. ASTM D5470-06 with known temperatures and clamping forces;2. In-situ testing with industry-standard semiconductor modules, at known temperatures and estimated clamping forces;3. In-situ testing utilizing a thermal test vehicle (TTV) for TIM2 performance for a processor module. In-situ testing has been performed at an independent power semiconductor manufacturer, using both industry-standard and commonly-available modules and a custom-designed module with a relatively small footprint, capable of high operating junction temperatures. This testing data can illustrate how different types of TIM materials perform in laboratory testing conditions, for precise comparisons on thermal performance alone; and how different types of materials perform in what are termed as “in-situ” test procedures. This term is used for application-specific conditions, where additional variables are encountered in the testing (such as non-flat surface conditions and unknown clamping force values), which is significantly different from the laboratory conditions used to generate ASTM D-5470 test values. The comparative testing that has been undertaken will be described, showing that images of various power semiconductors with several different materials tend to correlate with the thermal resistance of materials measured with the ASTM D 5470-06 method. These thermal interface materials were also tested on a TTV supplied by a major processor module. The relevance of the thermal imaging, the TTV and the ASTM values will be discussed. This presentation is intended to illustrate the differences in experimental data from one TIM material to another, as well as the differences in testing procedures.
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Packwood, R., M. W. Phaneuf, V. Weatherall, and I. Bassignana. "Analysis of completed commercial semiconductors using EPMA." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 502–3. http://dx.doi.org/10.1017/s0424820100164970.
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The development of specialized analytical instruments such as the SIMS, XPS, ISS etc., all with truly incredible abilities in certain areas, has given rise to the notion that electron probe microanalysis (EPMA) is an old fashioned and rather inadequate technique, and one that is of little or no use in such high technology fields as the semiconductor industry. Whilst it is true that the microprobe does not possess parts-per-billion sensitivity (ppb) or monolayer depth resolution it is also true that many times these extremes of performance are not essential and that a few tens of parts-per-million (ppm) and a few tens of nanometers depth resolution is all that is required. In fact, the microprobe may well be the second choice method for a wide range of analytical problems and even the method of choice for a few.The literature is replete with remarks that suggest the writer is confusing an SEM-EDXS combination with an instrument such as the Cameca SX-50. Even where this confusion does not exist, the literature discusses microprobe detection limits that are seldom stated to be as low as 100 ppm, whereas there are numerous element combinations for which 10-20 ppm is routinely attainable.
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Heyns, M., and W. Tsai. "Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials." MRS Bulletin 34, no. 7 (July 2009): 485–92. http://dx.doi.org/10.1557/mrs2009.136.
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AbstractOver the years, many new materials have been introduced in advanced complementary metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the gate length and increasing the performance of CMOS devices. This is clearly evidenced in the International Technology Roadmap for Semiconductors (ITRS), which indicates the requirements and technological challenges in the microelectronics industry in various technology nodes. Every new technology node, characterized by the minimal device dimensions that are used, has required innovations in new materials and transistor design. The introduction of deposited high-κ gate dielectrics and metal gates as replacements for the thermally grown SiO2 and poly-Si electrode was a major challenge that has been met in the transition toward the 32 nm technology node since it replaced the heart of the metal oxide semiconductor structure. For the next generation of technology nodes, even bigger hurdles will need to be overcome, since new device structures and high-mobility channel materials such as Ge and III–V compounds might be needed, according to the ITRS roadmap, to meet the power and performance specifications of the 16 nm CMOS node and beyond. The basic properties of these high-mobility channel materials and their impact on the device performance have to be fully understood to allow process integration and full-scale manufacturing. In addition to thermal stability, compatibility with other materials, electronic transport properties, and especially the passivation of electronically active defects at the interface with a high-κ dielectric, are enormous challenges. Many encouraging results have been obtained, but the stringent demands in terms of electrical performance and oxide thickness scaling needed for highly scaled CMOS devices are not yet fully met. Other areas where breakthroughs will be needed are the formation of low-resistivity contacts, especially on III–V materials, and III–V materials suited for pMOS channels. An overview of the major successes and remaining critical issues in the materials research on high-mobility channel materials for advanced CMOS devices is given in this issue of MRS Bulletin.
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Kacker, Karan, Thomas Sokol, Wansuk Yun, Madhavan Swaminathan, and Suresh K. Sitaraman. "A Heterogeneous Array of Off-Chip Interconnects for Optimum Mechanical and Electrical Performance." Journal of Electronic Packaging 129, no. 4 (April 9, 2007): 460–68. http://dx.doi.org/10.1115/1.2804096.
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Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors that by the year 2015, the chip-to-substrate area-array input-output interconnects will require a pitch of 80 μm. Compliant off-chip interconnects show great potential to address these needs. G-Helix is a lithography-based electroplated compliant interconnect that can be fabricated at the wafer level. G-Helix interconnects exhibit excellent compliance in all three orthogonal directions, and can accommodate the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate without requiring an underfill. Also, these compliant interconnects are less likely to crack or delaminate the low-k dielectric material in current and future integrated circuits. The interconnects are potentially cost effective because they can be fabricated in batch at the wafer level and using conventional wafer fabrication infrastructure. In this paper, we present an integrative approach, which uses interconnects with varying compliance and thus varying electrical performance from the center to the edge of the die. Using such a varying geometry from the center to the edge of the die, the system performance can be tailored by balancing electrical requirements against thermomechanical reliability concerns. The test vehicle design to assess the reliability and electrical performance of the interconnects is also presented. Preliminary fabrication results for the integrative approach are presented and show the viability of the fabrication procedure. The results from reliability experiments of helix interconnects assembled on an organic substrate are also presented. Initial results from the thermal cycling experiments are promising. Results from mechanical characterization experiments are also presented and show that the out-of-plane compliance exceeds target values recommended by industry experts. Finally, through finite element analysis simulations, it is demonstrated that the die stresses induced by the compliant interconnects are an order of magnitude lower than the die stresses in flip chip on board (FCOB) assemblies, and hence the compliant interconnects are not likely to crack or delaminate low-k dielectric material.
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Clemens, B. M., and J. A. Bain. "Stress Determination in Textured Thin Films Using X-Ray Diffraction." MRS Bulletin 17, no. 7 (July 1992): 46–51. http://dx.doi.org/10.1557/s0883769400041658.
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Thin film stresses are important in many areas of technology. In the semiconductor industry, metal interconnects are prone to stress voiding and hillock formation. Stresses in passivation layers can lead to excessive substrate curvature which can cause alignment difficulty in subsequent lithographic processing. In other thin film applications, stresses can cause peeling from mechanical failure at the film-substrate interface. Beyond these issues of reliability, stress and the resulting strain can be used to tune the properties of thin film materials. For instance, strain, coupled with the magnetostrictive effect, can be utilized to induce the preferred magnetization direction. Also, epitaxial strains can be used to adjust the bandgap of semiconductors. Finally, the anomalous mechanical properties of multilayered materials are thought to be partially due to the extreme strain states in the constituents of these materials. To fully optimize thin film performance, a fundamental understanding of the causes and effects of thin film stress is needed. These studies in turn rely on detailed characterization of the stress and strain state of thin films.X-ray diffraction and the elastic response of materials provide a powerful method for determining stresses. Stresses alter the spacing of crystallographic planes in crystals by amounts easily measured by x-ray diffraction. Each set of crystal planes can act as an in-situ strain gauge, which can be probed by x-ray diffraction in the appropriate geometry. Hence it is not surprising that x-ray diffraction is one of the most widely used techniques for determining stress and strain in materials. (For reviews of this topic, see References 5–7.) This article is a tutorial on the use of x-ray diffraction to extract the stress state and the unstrained lattice parameter from thin films. We present a handbook of useful results that can be widely applied and should be mastered by anyone seriously interested in stresses in crystalline thin films with a crystallographic growth texture.
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