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Journal articles on the topic 'Semiconductors Surface chemistry. Electrical engineering'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Chen, Po-Yun, Chieh Hsu, Manikandan Venkatesan, Yen-Lin Tseng, Chia-Jung Cho, Su-Ting Han, Ye Zhou, Wei-Hung Chiang, and Chi-Ching Kuo. "Enhanced electrical and thermal properties of semi-conductive PANI-CNCs with surface modified CNCs." RSC Advances 11, no. 19 (2021): 11444–56. http://dx.doi.org/10.1039/d0ra10663a.

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Biodegradable surface-modified CNCs were synthesized found high dispersibility and flexibility. Polyaniline-doped CNCs nanocomposites were exhibited high conductivity and thermal stability that may be promising for flexible semiconductors.

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2

Kronik, Leeor, and Yoram Shapira. "Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering." Surface and Interface Analysis 31, no. 10 (2001): 954–65. http://dx.doi.org/10.1002/sia.1132.

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3

Sharma, Shubham, P. Sudhakara, Abdoulhdi A. Borhana Omran, Jujhar Singh, and R. A. Ilyas. "Recent Trends and Developments in Conducting Polymer Nanocomposites for Multifunctional Applications." Polymers 13, no. 17 (August 28, 2021): 2898. http://dx.doi.org/10.3390/polym13172898.

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Electrically-conducting polymers (CPs) were first developed as a revolutionary class of organic compounds that possess optical and electrical properties comparable to that of metals as well as inorganic semiconductors and display the commendable properties correlated with traditional polymers, like the ease of manufacture along with resilience in processing. Polymer nanocomposites are designed and manufactured to ensure excellent promising properties for anti-static (electrically conducting), anti-corrosion, actuators, sensors, shape memory alloys, biomedical, flexible electronics, solar cells, fuel cells, supercapacitors, LEDs, and adhesive applications with desired-appealing and cost-effective, functional surface coatings. The distinctive properties of nanocomposite materials involve significantly improved mechanical characteristics, barrier-properties, weight-reduction, and increased, long-lasting performance in terms of heat, wear, and scratch-resistant. Constraint in availability of power due to continuous depletion in the reservoirs of fossil fuels has affected the performance and functioning of electronic and energy storage appliances. For such reasons, efforts to modify the performance of such appliances are under way through blending design engineering with organic electronics. Unlike conventional inorganic semiconductors, organic electronic materials are developed from conducting polymers (CPs), dyes and charge transfer complexes. However, the conductive polymers are perhaps more bio-compatible rather than conventional metals or semi-conductive materials. Such characteristics make it more fascinating for bio-engineering investigators to conduct research on polymers possessing antistatic properties for various applications. An extensive overview of different techniques of synthesis and the applications of polymer bio-nanocomposites in various fields of sensors, actuators, shape memory polymers, flexible electronics, optical limiting, electrical properties (batteries, solar cells, fuel cells, supercapacitors, LEDs), corrosion-protection and biomedical application are well-summarized from the findings all across the world in more than 150 references, exclusively from the past four years. This paper also presents recent advancements in composites of rare-earth oxides based on conducting polymer composites. Across a variety of biological and medical applications, the fact that numerous tissues were receptive to electric fields and stimuli made CPs more enticing.

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4

Constantinoiu, Izabela, and Cristian Viespe. "ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors: A Review." Sensors 20, no. 18 (September 8, 2020): 5118. http://dx.doi.org/10.3390/s20185118.

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Surface acoustic wave (SAW) gas sensors are of continuous development interest to researchers due to their sensitivity, short detection time, and reliability. Among the most used materials to achieve the sensitive film of SAW sensors are metal oxide semiconductors, which are highlighted by thermal and chemical stability, by the presence on their surface of free electrons and also by the possibility of being used in different morphologies. For different types of gases, certain metal oxide semiconductors are used, and ZnO is an important representative for this category of materials in the field of sensors. Having a great potential for the development of SAW sensors, the discussion related to the development of the sensitivity of metal oxide semiconductors, especially ZnO, by the synthesis method or by obtaining new materials, is suitable and necessary to have an overview of the latest results in this domain.

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5

Ivanov, P. A., M. E. Levinshtein, J. W. Palmour, and S. L. Rumyantsev. "Noise spectroscopy of local surface levels in semiconductors." Semiconductor Science and Technology 15, no. 2 (February 1, 2000): 164–68. http://dx.doi.org/10.1088/0268-1242/15/2/315.

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6

Ogino, Toshio, Hiroki Hibino, and Yoshikazu Homma. "Kinetics and Thermodynamics of Surface Steps on Semiconductors." Critical Reviews in Solid State and Materials Sciences 24, no. 3 (September 1999): 227–63. http://dx.doi.org/10.1080/10408439991329206.

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7

Kwok, R. W. M., W. M. Lau, D. Landheer, and S. Ingrey. "Surface charge spectroscopy—A novel surface science technique for measuring surface state distributions on semiconductors." Journal of Electronic Materials 22, no. 9 (September 1993): 1141–46. http://dx.doi.org/10.1007/bf02817686.

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8

Slankamenac, Milos, Svetlana Lukic, and Milos Zivanov. "Analysis of electrical switching effects in the chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99." Chemical Industry 63, no. 3 (2009): 183–87. http://dx.doi.org/10.2298/hemind0903183s.

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The current-voltage characteristics of the bulk metal chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99 are obtained by Tektronix 576 Curve Tracer. It was found that this glass has current-controlled negative resistance (CCNR) and switching characteristic with memory. Experimental results have shown a strong decrease in electrical resistivity and threshold voltage due to the presence of the metallic element copper and change of ambient temperature. Also, photomicrographs of the sample surface are presented and the impact of electrical switching on forming crystalline conductive channels on the surface of the investigated amorphous semiconductor is discussed.

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9

Kusior, Anna, Milena Synowiec, Katarzyna Zakrzewska, and Marta Radecka. "Surface-Controlled Photocatalysis and Chemical Sensing of TiO2, α-Fe2O3, and Cu2O Nanocrystals." Crystals 9, no. 3 (March 20, 2019): 163. http://dx.doi.org/10.3390/cryst9030163.

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A relatively new approach to the design of photocatalytic and gas sensing materials is to use the shape-controlled nanocrystals with well-defined facets exposed to light or gas molecules. An abrupt increase in a number of papers on the synthesis and characterization of metal oxide semiconductors such as a TiO2, α-Fe2O3, Cu2O of low-dimensionality, applied to surface-controlled photocatalysis and gas sensing, has been recently observed. The aim of this paper is to review the work performed in this field of research. Here, the focus is on the mechanism and processes that affect the growth of nanocrystals, their morphological, electrical, and optical properties and finally their photocatalytic as well as gas sensing performance.

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10

Beyreuther, Elke, Stefan Grafström, and Lukas Eng. "Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition." Sensors 18, no. 11 (November 21, 2018): 4068. http://dx.doi.org/10.3390/s18114068.

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We introduce a robust low-budget Kelvin probe design that is optimized for the long-term acquisition of surface photovoltage (SPV) data, especially developed for highly resistive systems, which exhibit—in contrast to conventional semiconductors—very slow photoinduced charge relaxation processes in the range of hours and days. The device provides convenient optical access to the sample, as well as high mechanical and electrical stability due to off-resonance operation, showing a noise band as narrow as 1 mV. Furthermore, the acquisition of temperature-dependent SPV transients necessary for SPV-based deep-level transient spectroscopy becomes easily possible. The performance of the instrument is demonstrated by recording long-term SPV transients of the ultra-slowly relaxing model oxide strontium titanate (SrTiO 3 ) over 20 h.

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11

Leontie, L., I. Druta, R. Danac, M. Prelipceanu, and G. I. Rusu. "Electrical properties of some new high resistivity organic semiconductors in thin films." Progress in Organic Coatings 54, no. 3 (November 2005): 175–81. http://dx.doi.org/10.1016/j.porgcoat.2005.06.003.

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12

Musin, Ildar R., Dmitriy S. Boyuk, and Michael A. Filler. "Surface chemistry controlled diameter-modulated semiconductor nanowire superstructures." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31, no. 2 (March 2013): 020603. http://dx.doi.org/10.1116/1.4792660.

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13

Escasain, E., E. Lopez-Elvira, A. M. Baro, J. Colchero, and E. Palacios-Lidon. "Nanoscale surface photovoltage of organic semiconductors with two pass Kelvin probe microscopy." Nanotechnology 22, no. 37 (August 19, 2011): 375704. http://dx.doi.org/10.1088/0957-4484/22/37/375704.

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14

Weiser, Gerhard. "Differential electroabsorption studies of semiconductors and semiconductor heterostructures." physica status solidi (a) 204, no. 2 (February 2007): 319–30. http://dx.doi.org/10.1002/pssa.200673950.

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15

Izpura, I., J. F. Valtueña, and E. Muñoz. "Surface band-bending assessment by photocurrent techniques. Application to III - V semiconductors." Semiconductor Science and Technology 12, no. 6 (June 1, 1997): 678–86. http://dx.doi.org/10.1088/0268-1242/12/6/006.

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16

Wautelet, M., and E. D. Gehain. "Origin of laser-assisted and doping-assisted phenomena in semiconductors: II. Surface reactions." Semiconductor Science and Technology 5, no. 3 (March 1, 1990): 246–54. http://dx.doi.org/10.1088/0268-1242/5/3/011.

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17

Szaro, L. "The surface photovoltage response time in the large gap semiconductors under subbandgap illumination." Semiconductor Science and Technology 6, no. 9 (September 1, 1991): 875–80. http://dx.doi.org/10.1088/0268-1242/6/9/007.

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18

Zhang, Yu-Xin, Chien-Hung Wu, Li-Wei Yeh, Yi-Ming Chen, Kow-Ming Chang, Shih-Ho Chang, and Albert Chin. "Effects of Microwave and Furnace Annealing for P-Type SnO Thin Film Material in Oxygen Ambient." Journal of Nanoscience and Nanotechnology 21, no. 9 (September 1, 2021): 4763–67. http://dx.doi.org/10.1166/jnn.2021.19257.

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Transparent conductive oxide (TCO) semiconductors are attracted considerable attention due to a wide range of applications, such as flat panel display (FPD), touch panels, solar cells, and other optoelectronic devices. Owing to the different carrier conduction paths between n-type and P-type TCOs, the n-type TCO used in TFTs usually have high Ion/Ioff current ratio (>107) and high electron mobility (>10 cm2/V·s), P-type TCO TFTs are both lower than that of n-type one. For complementary circuits design and applications, however, both P-type and n-type semiconductor materials are equally important. For SnO thin films, it is important to adjust the ratio of Sn2+ (SnO P-type) and Sn4+ (SnO2 n-type) in order to modulate the electrical characteristics. In this investigation of post treatment for SnO thin films, both microwave annealing (MWA) and furnace annealing process with 02 ambient are studied. The results show that SnO thin films are optimized at 300 °C, 30 minutes furnace annealing, the P-type SnO/SnO2 thin film shows surface mean roughness 0.168 nm, [Sn2+]/[Sn4+] ratio as 0.838, at least 80% transmittance between 380 nm-700 nm visible light. Withthe results, SnO can be even used to fabricate high performance P-type thin film transistors (TFTs) device for future applications.

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19

Yamada, Fumihiko, Shuichi Arakawa, and Itaru Kamiya. "Control of surface morphology and electronic properties of III-V semiconductors using molecular modification." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 4 (July 2010): C5F28—C5F32. http://dx.doi.org/10.1116/1.3447228.

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20

Wang, Xiaolei, Xupeng Sun, Shuainan Cui, Qianqian Yang, Tianrui Zhai, Jinliang Zhao, Jinxiang Deng, and Antonio Ruotolo. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." Sensors 21, no. 9 (April 25, 2021): 3009. http://dx.doi.org/10.3390/s21093009.

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Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

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21

Poulin, Mathieu, Steven Giannacopoulos, and Maksim Skorobogatiy. "Surface Wave Enhanced Sensing in the Terahertz Spectral Range: Modalities, Materials, and Perspectives." Sensors 19, no. 24 (December 13, 2019): 5505. http://dx.doi.org/10.3390/s19245505.

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The terahertz spectral range (frequencies of 0.1–10 THz) has recently emerged as the next frontier in non-destructive imaging and sensing. Here, we review amplitude-based and phase-based sensing modalities in the context of the surface wave enhanced sensing in the terahertz frequency band. A variety of surface waves are considered including surface plasmon polaritons on metals, semiconductors, and zero gap materials, surface phonon polaritons on polaritonic materials, Zenneck waves on high-k dielectrics, as well as spoof surface plasmons and spoof Zenneck waves on structured interfaces. Special attention is paid to the trade-off between surface wave localization and sensor sensitivity. Furthermore, a detailed theoretical analysis of the surface wave optical properties as well as the sensitivity of sensors based on such waves is supplemented with many examples related to naturally occurring and artificial materials. We believe our review can be of interest to scientists pursuing research in novel high-performance sensor designs operating at frequencies beyond the visible/IR band.

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22

Omr, Hossam A. E., Mark W. Horn, and Hyeonseok Lee. "Low-Dimensional Nanostructured Photocatalysts for Efficient CO2 Conversion into Solar Fuels." Catalysts 11, no. 4 (March 25, 2021): 418. http://dx.doi.org/10.3390/catal11040418.

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The ongoing energy crisis and global warming caused by the massive usage of fossil fuels and emission of CO2 into atmosphere continue to motivate researchers to investigate possible solutions. The conversion of CO2 into value-added solar fuels by photocatalysts has been suggested as an intriguing solution to simultaneously mitigate global warming and provide a source of energy in an environmentally friendly manner. There has been considerable effort for nearly four decades investigating the performance of CO2 conversion by photocatalysts, much of which has focused on structure or materials modification. In particular, the application of low-dimensional structures for photocatalysts is a promising pathway. Depending on the materials and fabrication methods, low-dimensional nanomaterials can be formed in zero dimensional structures such as quantum dots, one-dimensional structures such as nanowires, nanotubes, nanobelts, and nanorods, and two-dimensional structures such as nanosheets and thin films. These nanostructures increase the effective surface area and possess unique electrical and optical properties, including the quantum confinement effect in semiconductors or the localized surface plasmon resonance effect in noble metals at the nanoscale. These unique properties can play a vital role in enhancing the performance of photocatalytic CO2 conversion into solar fuels by engineering the nanostructures. In this review, we provide an overview of photocatalytic CO2 conversion and especially focus on nanostructured photocatalysts. The fundamental mechanism of photocatalytic CO2 conversion is discussed and recent progresses of low-dimensional photocatalysts for efficient conversion of CO2 into solar fuels are presented.

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23

Lewerenz, H. J., K. Skorupska, M. Aggour, T. Stempel, and J. Grzanna. "Surface chemistry and electronics of semiconductor–nanosystem junctions I: metal-nanoemitter-based solar cells." Journal of Solid State Electrochemistry 13, no. 2 (September 25, 2008): 185–94. http://dx.doi.org/10.1007/s10008-008-0640-1.

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24

Gusinskii, G. M., I. V. Kudryavtsev, V. K. Kudoyarova, V. O. Naidenov, and L. A. Rassadin. "A method for investigation of light-element distribution in the surface layers of semiconductors and dielectrics." Semiconductor Science and Technology 7, no. 7 (July 1, 1992): 881–87. http://dx.doi.org/10.1088/0268-1242/7/7/002.

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25

He, Pimo. "Growth behaviour and electronic properties of organic semiconductors on metal surfaces." International Journal of Nanotechnology 4, no. 1/2 (2007): 100. http://dx.doi.org/10.1504/ijnt.2007.012317.

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26

Lüssem, B., M. Riede, and K. Leo. "Doping of organic semiconductors." physica status solidi (a) 210, no. 1 (December 20, 2012): 9–43. http://dx.doi.org/10.1002/pssa.201228310.

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27

Katayama-Yoshida, H., K. Sato, T. Fukushima, M. Toyoda, H. Kizaki, V. A. Dinh, and P. H. Dederichs. "Theory of ferromagnetic semiconductors." physica status solidi (a) 204, no. 1 (January 2007): 3. http://dx.doi.org/10.1002/pssa.200790001.

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28

Jang, Jin. "Amorphous and Nanocrystalline Semiconductors." physica status solidi (a) 215, no. 12 (June 2018): 1870026. http://dx.doi.org/10.1002/pssa.201870026.

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29

Katayama-Yoshida, H., K. Sato, T. Fukushima, M. Toyoda, H. Kizaki, V. A. Dinh, and P. H. Dederichs. "Theory of ferromagnetic semiconductors." physica status solidi (a) 204, no. 1 (January 2007): 15–32. http://dx.doi.org/10.1002/pssa.200673021.

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30

Marikutsa, Artem, Marina Rumyantseva, Elizaveta A. Konstantinova, and Alexander Gaskov. "The Key Role of Active Sites in the Development of Selective Metal Oxide Sensor Materials." Sensors 21, no. 7 (April 6, 2021): 2554. http://dx.doi.org/10.3390/s21072554.

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Development of sensor materials based on metal oxide semiconductors (MOS) for selective gas sensors is challenging for the tasks of air quality monitoring, early fire detection, gas leaks search, breath analysis, etc. An extensive range of sensor materials has been elaborated, but no consistent guidelines can be found for choosing a material composition targeting the selective detection of specific gases. Fundamental relations between material composition and sensing behavior have not been unambiguously established. In the present review, we summarize our recent works on the research of active sites and gas sensing behavior of n-type semiconductor metal oxides with different composition (simple oxides ZnO, In2O3, SnO2, WO3; mixed-metal oxides BaSnO3, Bi2WO6), and functionalized by catalytic noble metals (Ru, Pd, Au). The materials were variously characterized. The composition, metal-oxygen bonding, microstructure, active sites, sensing behavior, and interaction routes with gases (CO, NH3, SO2, VOC, NO2) were examined. The key role of active sites in determining the selectivity of sensor materials is substantiated. It was shown that the metal-oxygen bond energy of the MOS correlates with the surface acidity and the concentration of surface oxygen species and oxygen vacancies, which control the adsorption and redox conversion of analyte gas molecules. The effects of cations in mixed-metal oxides on the sensitivity and selectivity of BaSnO3 and Bi2WO6 to SO2 and VOCs, respectively, are rationalized. The determining role of catalytic noble metals in oxidation of reducing analyte gases and the impact of acid sites of MOS to gas adsorption are demonstrated.

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31

Zhou, Lu, Xuefeng Chu, Yaodan Chi, and Xiaotian Yang. "Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation." Crystals 9, no. 3 (March 5, 2019): 130. http://dx.doi.org/10.3390/cryst9030130.

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In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.

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32

Katayama, Y., I. Tanaka, S. Ohkouchi, F. Osaka, and T. Kato. "In situ STM observation of MBE surfaces of III-V semiconductors." Nanotechnology 3, no. 3 (July 1, 1992): 123–25. http://dx.doi.org/10.1088/0957-4484/3/3/004.

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33

Nguyen, Cattien V., Kuo-Jen Chao, Ramsey M. D. Stevens, Lance Delzeit, Alan Cassell, Jie Han, and M. Meyyappan. "Carbon nanotube tip probes: stability and lateral resolution in scanning probe microscopy and application to surface science in semiconductors." Nanotechnology 12, no. 3 (August 28, 2001): 363–67. http://dx.doi.org/10.1088/0957-4484/12/3/326.

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34

Kim, Ui-Jin, and Rae-Young Kim. "Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors." Sensors 20, no. 21 (October 25, 2020): 6066. http://dx.doi.org/10.3390/s20216066.

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Gallium nitride (GaN) devices are advantageous over conventional Silicon (Si) devices in terms of their small size, low on-resistance, and high dv/dt characteristics; these ensure a high integrated density circuit configuration, high efficiency, and fast switching speed. Therefore, in the diagnosis and protection of a system containing a GaN power semiconductor, the transient state for accurate switch current measurement must be analyzed. The pick-up coil, as a current sensor for switch current measurement in a system comprising a surface-mount-device-type nonmodular GaN power semiconductor, has the advantages of a higher degree-of-freedom configuration for its printed circuit board, a relatively small size, and lower cost than other current sensors. However, owing to the fast switching characteristics of the GaN device, a bandwidth of hundreds MHz must be secured along with a coil configuration that must overcome the limitations of relatively low sensitivity of the conventional current sensor. This paper analyzes the pick-up coil sensor models that can achieve optimal bandwidth and sensitivity for switch current measurement in GaN based device. So four configurable pick-up coil models are considered and compared according to coil-parameter using mathematical methods, magnetic, and frequency-response analysis. Finally, an optimal coil model is proposed and validated using a double-pulse test.

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35

Liu, Guiqiang, Yiyou Nie, Guolan Fu, Xiaoshan Liu, Yi Liu, Li Tang, and Zhengqi Liu. "Semiconductor meta-surface based perfect light absorber." Nanotechnology 28, no. 16 (March 24, 2017): 165202. http://dx.doi.org/10.1088/1361-6528/aa6613.

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36

Kurt, Adnan, Bayram Gündüz, and Murat Koca. "A detailed study on the optical properties of 3-benzoyl-7-hydroxy coumarin compound in different solvents and concentrations." Macedonian Journal of Chemistry and Chemical Engineering 38, no. 2 (December 30, 2019): 227. http://dx.doi.org/10.20450/mjcce.2019.1403.

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A coumarin-derived compound, 3-benzoyl-7-hydroxy coumarin (BHYC), is synthesized to determine its optoelectronic properties, including absorbance band edge, optical band gap, transmittance, refractive index, electrical susceptibility, volume-surface energy loss functions and optical/electrical conductance parameters. The absorbance spectra of BHYC in dimethylformamide (DMF) and dimethylsulfoxide (DMSO) solvents exhibit maximum peaks at 350 and 353 nm, respectively, in the near-ultraviolet region. The absorbance band edge values of BHYC in DMF and DMSO are 2.526 and 2.500 eV, respectively. The optical band gap of BHYC varies from 2.560 to 2.408 eV with increasing molarity. In contrast, the refractive index of BHYC increases from 2.47 to 2.95 with changing molarity. The obtained results show that 3-benzoyl-7-hydroxy coumarin exhibits a semiconductor behavior and it may be an important candidate for many optoelectronic devices, such as diodes, photodiodes and sensors.

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37

Tam, Man Chun, Yinqiu Shi, Denise Gosselink, Marc Jaikissoon, and Zbig R. Wasilewski. "Temperature monitoring of narrow bandgap semiconductors." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, no. 2 (March 2017): 02B102. http://dx.doi.org/10.1116/1.4975926.

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38

Beattie, A. R., P. Scharoch, and R. A. Abram. "Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors." Semiconductor Science and Technology 4, no. 9 (September 1, 1989): 715–23. http://dx.doi.org/10.1088/0268-1242/4/9/003.

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39

Dhariwal, S. R., and B. M. Deoraj. "Theory of surface photovoltage in semiconductor films." Semiconductor Science and Technology 8, no. 3 (March 1, 1993): 372–76. http://dx.doi.org/10.1088/0268-1242/8/3/011.

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40

Kronik, L., M. Leibovitch, E. Fefer, L. Burstein, and Yoram Shapira. "Quantitative surface photovoltage spectroscopy of semiconductor interfaces." Journal of Electronic Materials 24, no. 4 (April 1995): 379–85. http://dx.doi.org/10.1007/bf02659702.

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41

Wang, Wei, Qinyi Zhang, Ruonan Lv, Dong Wu, and Shunping Zhang. "Enhancing Formaldehyde Selectivity of SnO2 Gas Sensors with the ZSM-5 Modified Layers." Sensors 21, no. 12 (June 8, 2021): 3947. http://dx.doi.org/10.3390/s21123947.

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High performance formaldehyde gas sensors are widely needed for indoor air quality monitoring. A modified layer of zeolite on the surface of metal oxide semiconductors results in selectivity improvement to formaldehyde as gas sensors. However, there is insufficient knowledge on how the thickness of the zeolite layer affects the gas sensing properties. In this paper, ZSM-5 zeolite films were coated on the surface of the SnO2 gas sensors by the screen printing method. The thickness of ZSM-5 zeolite films was controlled by adjusting the numbers of screen printing layers. The influence of ZSM-5 film thickness on the performance of ZSM-5/SnO2 gas sensors was studied. The results showed that the ZSM-5/SnO2 gas sensors with a thickness of 19.5 μm greatly improved the selectivity to formaldehyde, and reduced the response to ethanol, acetone and benzene at 350 °C. The mechanism of the selectivity improvement to formaldehyde of the sensors was discussed.

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Bru-Chevallier, C., S. Fanget, and A. Philippe. "Photoreflectance on wide bandgap nitride semiconductors." physica status solidi (a) 202, no. 7 (May 2005): 1292–99. http://dx.doi.org/10.1002/pssa.200460909.

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Stutzmann, Martin, Jose Antonio Garrido, Martin Eickhoff, and Martin S. Brandt. "Direct biofunctionalization of semiconductors: A survey." physica status solidi (a) 203, no. 14 (November 2006): 3424–37. http://dx.doi.org/10.1002/pssa.200622512.

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Neumann, Bettina, and Ulla Wollenberger. "Electrochemical Biosensors Employing Natural and Artificial Heme Peroxidases on Semiconductors." Sensors 20, no. 13 (July 1, 2020): 3692. http://dx.doi.org/10.3390/s20133692.

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Heme peroxidases are widely used as biological recognition elements in electrochemical biosensors for hydrogen peroxide and phenolic compounds. Various nature-derived and fully synthetic heme peroxidase mimics have been designed and their potential for replacing the natural enzymes in biosensors has been investigated. The use of semiconducting materials as transducers can thereby offer new opportunities with respect to catalyst immobilization, reaction stimulation, or read-out. This review focuses on approaches for the construction of electrochemical biosensors employing natural heme peroxidases as well as various mimics immobilized on semiconducting electrode surfaces. It will outline important advances made so far as well as the novel applications resulting thereof.

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Poghossian, Arshak, Rene Welden, Vahe V. Buniatyan, and Michael J. Schöning. "An Array of On-Chip Integrated, Individually Addressable Capacitive Field-Effect Sensors with Control Gate: Design and Modelling." Sensors 21, no. 18 (September 14, 2021): 6161. http://dx.doi.org/10.3390/s21186161.

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The on-chip integration of multiple biochemical sensors based on field-effect electrolyte-insulator-semiconductor capacitors (EISCAP) is challenging due to technological difficulties in realization of electrically isolated EISCAPs on the same Si chip. In this work, we present a new simple design for an array of on-chip integrated, individually electrically addressable EISCAPs with an additional control gate (CG-EISCAP). The existence of the CG enables an addressable activation or deactivation of on-chip integrated individual CG-EISCAPs by simple electrical switching the CG of each sensor in various setups, and makes the new design capable for multianalyte detection without cross-talk effects between the sensors in the array. The new designed CG-EISCAP chip was modelled in so-called floating/short-circuited and floating/capacitively-coupled setups, and the corresponding electrical equivalent circuits were developed. In addition, the capacitance-voltage curves of the CG-EISCAP chip in different setups were simulated and compared with that of a single EISCAP sensor. Moreover, the sensitivity of the CG-EISCAP chip to surface potential changes induced by biochemical reactions was simulated and an impact of different parameters, such as gate voltage, insulator thickness and doping concentration in Si, on the sensitivity has been discussed.

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Lee, Du-Yeon, Youn-Sik Lee, and Joon-Pyo Jeun. "Study on Aminated PP-g-GMA Synthesized by Radiation-Induced Graft Polymerization for Silver Adsorption." Journal of Nanoscience and Nanotechnology 20, no. 9 (September 1, 2020): 5411–17. http://dx.doi.org/10.1166/jnn.2020.17651.

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In the semiconductor manufacturing process, metallic contaminants remain on the surface of the silicon wafer, which has a serious effect on the physical and electrical characteristics of the semiconductor device. In particular, silver has high electrical conductivity and large reducibility, and it is not easily removed causing a great deal of damage in small amounts. Therefore, it is important to prevent contamination by lowering the silver ion concentration in the etching agent in the wet etching process. In this study, to prepare an effective silver ion adsorbent, glycidyl methacrylate (GMA) was grafted onto polypropylene (PP) through electron beam irradiation. Ethylenediamine (EDA) and diethylenetriamine (DETA) were introduced into the epoxide group of GMA via amination. The prepared adsorbent was packed in a holder and connected to a circulation pump, and 1 L of 200 ppm silver ion solution was circulated at room temperature for 12 hours. The adsorbents aminated with EDA and DETA showed adsorption capacities of 2.0587 mmol/g and 2.3645 mmol/g, respectively.

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Kemal Havare, Ali. "Electronic Parameters of Diode Based Organometallic Semiconductor Dyes Centered Ruthenium Complexes with Active COOH Terminals." Journal of Nanoscience and Nanotechnology 21, no. 12 (December 1, 2021): 5937–44. http://dx.doi.org/10.1166/jnn.2021.19508.

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In this study, the ruthenium complexes, which is an organometallic N-3 and C-106 semiconductor material, was coated on indium tin oxide (ITO) by using the self-assembled technique and thus a diode containing an organometallic interface was produced. The effects of this interface on the electronic parameters of the diode were investigated. It is aimed to improve the heterogeneity problem of the inorganic/organic interface by chemically bonding these materials from COOH active parts to the ITO surface. In order to understand how the electronic parameters of the diode change with this modification, the Schottky diode electrical characterization approach has been used. The charge mobility of the diode was calculated using the current density-voltage curve (J–V) characteristic with Space Charge Limited Current (SCLC) technique. When the electrical field is applied to the diode, it can be said that the ruthenium complexes molecules create an electrical dipole and the tunneling current is transferred to the anode contact ITO through the ruthenium molecule through the charge carrier, thus contributing to the hole injection. The morphology of these interface modifications was examined by Atomic Force Microscope (AFM) and surface potential energy by KelvinProbe Force Microscope (KPFM). To investigate local conductivity of bare ITO and modified ITO surface, Scanning Spreading Resistance Microscopy (SSRM) that is a conductive AFM analyzing technique were performed by applying voltage to the conductive tip and to the sample. According to the results of this work the diode containing N-3 material shows the best performance in terms of charge injection to the ITO due to possess the lowest barrier height Φb as 0.43 eV.

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Donatini, Fabrice, Corinne Sartel, Vincent Sallet, and Julien Pernot. "Electron beam dose dependence of surface recombination velocity and surface space charge in semiconductor nanowires." Nanotechnology 28, no. 23 (May 17, 2017): 235701. http://dx.doi.org/10.1088/1361-6528/aa70be.

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Mondal, Sandeep K., Nehru Devabharathi, and Subho Dasgupta. "Effect of semiconductor surface homogeneity and interface quality on electrical performance of inkjet-printed oxide field-effect transistors." Nanotechnology 30, no. 43 (August 7, 2019): 435201. http://dx.doi.org/10.1088/1361-6528/ab2a84.

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Parmeggiani, Matteo, Alessio Verna, Alberto Ballesio, Matteo Cocuzza, Erik Piatti, Vittorio Fra, Candido Fabrizio Pirri, and Simone Luigi Marasso. "P3HT Processing Study for In-Liquid EGOFET Biosensors: Effects of the Solvent and the Surface." Sensors 19, no. 20 (October 17, 2019): 4497. http://dx.doi.org/10.3390/s19204497.

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In-liquid biosensing is the new frontier of health and environment monitoring. A growing number of analytes and biomarkers of interest correlated to different diseases have been found, and the miniaturized devices belonging to the class of biosensors represent an accurate and cost-effective solution to obtaining their recognition. In this study, we investigate the effect of the solvent and of the substrate modification on thin films of organic semiconductor Poly(3-hexylthiophene) (P3HT) in order to improve the stability and electrical properties of an Electrolyte Gated Organic Field Effect Transistor (EGOFET) biosensor. The studied surface is the relevant interface between the P3HT and the electrolyte acting as gate dielectric for in-liquid detection of an analyte. Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) characterizations were employed to study the effect of two solvents (toluene and 1,2-dichlorobenzene) and of a commercial adhesion promoter (Ti Prime) on the morphological structure and electronic properties of P3HT film. Combining the results from these surface characterizations with electrical measurements, we investigate the changes on the EGOFET performances and stability in deionized (DI) water with an Ag/AgCl gate electrode.

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