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Journal articles on the topic 'Semicore state'

Author: Grafiati

Published: 14 March 2023

Last updated: 31 July 2025

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1

Chen, Tsung-Chia, and Wei-Kai Ceng. "Experimental and Numerical Analysis of Stainless Steel Microtube in Flaring Process." Mathematical Problems in Engineering 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/856272.

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This study, with experiments and comparisons, aims to analyze the difference of stainless (SUS316L) microtubes in the flaring forming among dies with various semicone angles (35°, 40°, 45°, 50°, and 55°). The flow rule by Prandtl-Reuss combined with the finite element deformation theory and updated Lagrangian formulation (ULF) is applied to establish the finite element analysis equation for an incremental elastoplastic deformation to simulate the microtube flaring process. The broadrminalgorithm is utilized in the forming process for the elastoplastic state and die contact. The simulation data

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2

Xing, Xiangdong, Sha Wang, and Qiuli Zhang. "Thermogravimetric Analysis and Kinetics of Mixed Combustion of Waste Plastics and Semicoke." Journal of Chemistry 2019 (June 12, 2019): 1–10. http://dx.doi.org/10.1155/2019/8675986.

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The thermogravimetric method was applied to study the combustion characteristics of waste plastics and semicoke mixture at different heating rates with temperature ranging from room temperature to 1173 K. Also, the kinetic parameters of combustion process were also estimated by fitting the experimental data to the calculated data. The results showed that the mixed combustion process of waste plastics and semicoke could be divided into volatile combustion stage and fixed carbon combustion stage. The addition of waste plastics could increase the comprehensive combustion characteristic index (S)

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Gao, Li Juan, Xue Fei Zhao, Shi Quan Lai, and Yan Xial Liu. "Carbonization Regime Process of Coal Tar Refined Soft Pitch." Advanced Materials Research 750-752 (August 2013): 1689–95. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.1689.

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The thermal behavior of coal tar refined soft pitch (CTRSP) was investigated by using polarizing microscope with heating stage and thermogravimetric analyzer. The phenomena of carbonization regime process of CTRSP were observed directly in the micro-picture taken online. The results showed that the carbonization thermal dynamic process of CTRSP is divided into several typical stages. At 30-250°C,there is small molecular evaporation; at 250-390 °C,there is thermal decomposition and small molecular evaporation; at 390-480°C,there is the condensation of small molecules and radicals into macromole

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4

Pamerneckis, Stasys. "Statistical analysis of the development of serfdom farms in the Vilnius and Dysna districts in the middle of the 19th century." Lietuvos istorijos studijos 3 (December 30, 1996): 37–50. http://dx.doi.org/10.15388/lis.1996.37476.

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The decay of feudal relations and intensification of commodity production is analysed on the basis of compulsory inventories in the middle of the 19th century. The basis of agricultural economy in Llthuania was the farm estate, based on corvey work in the Vilnius and Dysna districts, complete corvey work prevailed. Peasants, who paid money for the ground, accounted for 9%, and semicorvey peasants was about 15% ofthe total number of serfdom farms. This state of things showed, that the state was not indined to abolish serfdom at this time.

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HUANG ZHI-FENG, NI JUN, and GU BING-LIN. "GROUND-STATE ORDERED STRUCTURES OF TERNARY III-V SEMICO-NDUCTOR ALLOYS." Acta Physica Sinica 43, no. 12 (1994): 2003. http://dx.doi.org/10.7498/aps.43.2003.

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6

Ramamurti, V., K. S. Ramaprasad, and Y. Ramakrishna. "Design Parameters of Continuous Centrifugals." Journal of Engineering for Industry 111, no. 3 (1989): 291–94. http://dx.doi.org/10.1115/1.3188762.

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Continuous sugar centrifugal is used to separate sugar and molasses from massecuite. The centrifugal basket is pierced with numerous holes to allow the molasses to escape and is lined with metal gauze, which serves to retain the sugar while allowing the molasses to pass through. The centrifugal basket is conical in shape (Fig. 1), runs at a constant speed in the range 1200 to 2200 rpm., and is fed by a continuous stream of material. The semicone angle α varies from 25 deg to 35 deg. What prompted this investigation is a fairly high level of working stress experienced in commerically available

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7

Belich, H., and K. Bakke. "A spin-orbit coupling for a neutral particle from Lorentz symmetry breaking effects in the CPT-odd sector of the Standard Model Extension." International Journal of Modern Physics A 30, no. 22 (2015): 1550136. http://dx.doi.org/10.1142/s0217751x15501365.

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We start by investigating the arising of a spin-orbit coupling and a Darwin-type term that stem from Lorentz symmetry breaking effects in the CPT-odd sector of the Standard Model Extension. Then, we establish a possible scenario of the violation of the Lorentz symmetry that gives rise to a linear confining potential and an effective electric field in which determines the spin-orbit coupling for a neutral particle analogous to the Rashba coupling [E. I. Rashba, Sov. Phys. Solid State 2, 1109 (1960)]. Finally, we confine the neutral particle to a quantum dot [W.-C. Tan and J. C. Inkson, Semicond

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8

Murav’eva, I. V., and G. I. Bebeshko. "CONTROL OF FLUORINE IN METALLURGICAL FUEL." Izvestiya. Ferrous Metallurgy 62, no. 5 (2019): 381–86. http://dx.doi.org/10.17073/0368-0797-2019-5-381-386.

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Metallurgical fuel, including various types of mineral fuels: coke, hard coal, brown coal, peat, combustible shales and products of their technological conversion – needs environmental control of their use safety. When burning metallurgical fuel, harmful substances fall into the environment such as chlorine, fluorine, sulfur, arsenic, which worsen the environmental situation. Technical regulations on the safety of coal products contain requirements to limit the content of harmful impurities and their maximum permissible concentrations. Due to the wide spread of fluorine in natural and technolo

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9

Tran, Trong-Nam, Van-Tuan Huynh, Thi-Hanh-Thu Vu, Nguyet-Thuan Phan, Huynh-Tuan-Anh Nguyen, and Quang-Khoi Nguyen. "Study of steady-state thermal model for white light LEDs thermal management application at encapsulant level." Photonics Letters of Poland 16, no. 1 (2024): 13–15. http://dx.doi.org/10.4302/plp.v16i1.1270.

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Thermal management for white LEDs at the encapsulant level is an important task to ensure that the device can operate at a high optical and color performance. In this study, a steady-state thermal model was built wherein the finite element method was employed using MATLAB software to identify the temperature distribution. The spatial temperature distribution of the encapsulant and blue LED die region was easily simulated and predicted. The obtained results are not only helpful in detecting the temperature behavior inside the packaging volume but also meaningful for designing the package config

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10

KOSTRYUKOVA, ANASTASIYA M., IRINA V. MASHKOVA, TATYANA G. KRUPNOVA, and NIKITA O. EGOROV. "Phytoplankton biodiversity and its relationship with aquatic environmental factors in Lake Uvildy, South Urals, Russia." Biodiversitas Journal of Biological Diversity 19, no. 4 (2018): 1422–28. http://dx.doi.org/10.13057/biodiv/d190431.

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Kostryukova AM, Mashkova V, Krupnova TG, Egorov NO. 2018. Phytoplankton biodiversity and its relationship with aquatic environmental factors in Lake Uvildy, South Urals, Russia. Biodiversitas 19: 1422-1428. Lake Uvildy is one of the largest and the most unique of the South Ural region lakes. This mountain deep lake, which has the status of a natural monument. The purpose of this paper was to study the phytoplankton community structure and the aquatic environmental factors in Lake Uvildy. The phytoplankton samples were collected from 5 sites of Lake Uvildy, then filtered through the plankton ne

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11

Ito, Yuta, Ryo Yokogawa, Wei-Chen Wen, Yuji Yamamoto, and Atsushi Ogura. "Optical Properties of Multilayered Staggered SiGe Nanodots Depending on Si Spacer Growth Temperature." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2341. https://doi.org/10.1149/ma2024-02322341mtgabs.

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Introduction Uniformly ordered SiGe nanodot (ND) has the potential for optoelectronic device application. By engineering Si surface morphology, heteroepitaxial SiGe layer thickness distribution can be controlled by self-ordering [1]. The self-ordering is an attractive phenomenon for fabricating a vertically ordered stack of SiGe ND fabrication. Yamamoto et al. have successfully fabricated the SiGe staggered NDs by controlling the balance between the surface energy and the residual strain of the Si spacer [2]. We have evaluated the strain state, the optical characteristics, and the band structu

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12

O'Dwyer, Colm. "(Invited) Material Porosity." ECS Meeting Abstracts MA2022-02, no. 30 (2022): 1092. http://dx.doi.org/10.1149/ma2022-02301092mtgabs.

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We really like pores in our research group. Big pores, small pores, ordered pores, random pores – they all have a function and as is often found, show behaviour that is not always predicted. I started my research journey trying to put extremely thin films onto near-perfect III-V crystals to control (opto)electronic properties and when the first TEM on our campus showed the image in Fig. 1 almost 21 years ago (1,2), the electrochemical modification of the InP made more sense. In this talk, I will summarise the journey from porous InP that led to studies of other porous semiconductors such as si

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13

Fujimori, Ryota, Yuta Ito, Ryo Yokogawa, et al. "Evaluation of Interstitial Si Diffusion Induced by Plasma Etching and Subsequential Annealing for Si Trench Formation Using Low Temperature Photoluminescence Spectroscopy." ECS Meeting Abstracts MA2025-01, no. 31 (2025): 1598. https://doi.org/10.1149/ma2025-01311598mtgabs.

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Introduction Although plasma etching and subsequential annealing process are indispensable to form a uniform trench with a high aspect ratio, the formation of interstitial Si is unavoidable. Understanding the behavior of interstitial Si is an important issue since the point defects diffuse in pairs with dopants. Then, the behavior affects the current drive and threshold voltage of the device. The diffusion rate of interstitial Si has been predicted by existing models [1]. However, detailed behaviors such as diffusion distance and distribution of interstitial Si due to plasma etching and subseq

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14

Saputro, Rahmat Hadi, Ryo Matsumura, and Naoki Fukata. "Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing." ECS Meeting Abstracts MA2022-01, no. 29 (2022): 1283. http://dx.doi.org/10.1149/ma2022-01291283mtgabs.

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In recent years, germanium (Ge) has attracted a lot of attention for the development of next generation devices due to its higher carrier mobilities compared with silicon (Si) and its compatibility for complementary metal-oxide-semiconductor (CMOS) applications. It is widely known that Ge is an indirect-band semiconductor like Si. However, by introducing tensile strain, the 136 meV difference between direct and indirect gaps can be reduced. Furthermore, in the case of 0.2-0.3% tensile strained Ge, n-type doping in the order of 1019 cm-3 were expected to be resulted in quasi direct-band light e

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15

Yamamoto, Keisuke, Wei-Chen Wen, Dong Wang, and Hiroshi Nakashima. "(Invited) Thermally Oxidized Yttrium Oxide on Germanium for n-Mos Capacitor and Field-Effect Transistor." ECS Meeting Abstracts MA2023-02, no. 30 (2023): 1522. http://dx.doi.org/10.1149/ma2023-02301522mtgabs.

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Germanium (Ge) has many exciting material characteristics, such as high carrier mobility and narrow bandgap in the near-infrared range. Thus it is suitable for various applications. A high-quality insulating film on Ge is required to apply Ge to novel electronic devices successfully. It is well known that GeO2 on Ge has good electrical characteristics as a gate insulator or interlayer (IL), similar to SiO2 on Si [1]. Unlike SiO2, however, GeO2 is thermodynamically unstable under atmospheric pressure at typical oxidation temperatures (~400 °C) and volatilizes as GeO [2,3]. Several methods have

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16

BEL, Steven, Clément Lobre, Sarah Petit, Marc Veillerot, and Giacomo Badano. "Native Oxidation of HgCdTe Compound Semiconductors and Its Impact on Infrared Detectors Performances." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2529. https://doi.org/10.1149/ma2024-02362529mtgabs.

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The development of high-operating temperature (HOT) infrared imaging systems is motivated by the growing demand to reduce the size, weight, power consumption, and total cost of infrared detectors. HgCdTe photodiodes have unique material properties, making them one of the most promising candidates to produce infrared detectors with background-limited performances at room temperature, as predicted by the "Law 19" photodiode performance metric [1]. However, in state-of-the-art devices, the fraction of anomalous pixel responses increases alongside the detectors' operating temperature and cut-off w

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17

Dalmau, Rafael, Samuel Kirby, Jeffrey Britt, and Raoul Schlesser. "(Invited) Deep Level Defects in AlN Studied By UV-Visible Spectroscopy." ECS Meeting Abstracts MA2022-02, no. 37 (2022): 1350. http://dx.doi.org/10.1149/ma2022-02371350mtgabs.

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The ultrawide-bandgap (UWBG) AlGaN alloy system is emerging as a promising material for next generation power semiconductor devices. The increase in bandgap as the alloy composition is varied from the binary endpoints GaN to AlN leads to an increase in the critical electric field, which is a key parameter determining the performance of power semiconductor devices. As development of GaN and SiC materials for high-frequency and high-power devices reaches a state of maturity, pursuit of improved device performance is generating interest in UWBG materials with larger bandgaps. High Al composition

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18

Gourhant, Olivier, Anne-Flore Mallet, Adam Arette-Hourquet, et al. "Tight Control of SiGe Condensation Technique for Large Scale Fabrication of High Quality Thick S_0.5G_0.5oi Layer." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2289. https://doi.org/10.1149/ma2024-02322289mtgabs.

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The development of thick pseudo-substrate of SiGe usually involves a complex epitaxy of several microns thick gradual buffer layer. However, a drawback of this approach relies on high roughness of the top layer which implies the addition of subsequent planarization step. Furthermore, if the top part of the layer is relaxed and defect free, abundant dislocations are embedded several microns deep. They can expand during following thermal processes, possibly reaching the surface. Obviously, these defects are detrimental for electronic and photonic purposes. State of the art studies report disloca

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19

Ferraro, Antonio, Dimitrios C. Zografopoulos, Roberto Caputo, and Romeo Beccherelli. "Terahertz polarizing component on cyclo-olefin polymer." Photonics Letters of Poland 9, no. 1 (2017): 2. http://dx.doi.org/10.4302/plp.v9i1.699.

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Wire-grid polarizers constitute a traditional component for the control of polarization in free-space devices that operate in a broad part of the electromagnetic spectrum. Here, we present an aluminium-based THz wire grid polarizer, fabricated on a sub-wavelength thin flexible and conformal foil of Zeonor polymer having a thickness of 40um. The fabricated device,characterized by means of THz time-domain spectroscopy, exhibitsa high extinction ratio between 30 and 45dB in the 0.3-2.1THz range. The insertion losses oscillate between 0 and 1.1dB andthey stemalmost exclusively from moderate Fabry-

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20

Nabatame, Toshihide, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, and Kazuhito Tsukagoshi. "(Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress." ECS Meeting Abstracts MA2023-02, no. 30 (2023): 1527. http://dx.doi.org/10.1149/ma2023-02301527mtgabs.

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Vertical GaN-based trench gate metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely investigated to suppress leakage currents for applications associated with high power and high frequency. Various materials with high dielectric constant (High-k) such as Al2O3, HfO2, AlSiO x , HfSiO x , and HfAlOx have been studied as gate insulator to obtain high gm value of GaN MOSFET [1-6]. The structure of High-k gate insulator and interface between GaN and High-k is well known to affect characteristics of GaN MOS capacitor. An amorphous HfAlOx film could be fabricated by forming (

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21

Yamamoto, Yuji, Wei-Chen Wen, Markus Andreas Schubert, Cedic Corley-Wiciak, and Bernd Tillack. "High Quality Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition." ECS Meeting Abstracts MA2022-02, no. 32 (2022): 1213. http://dx.doi.org/10.1149/ma2022-02321213mtgabs.

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Heteroepitaxial growth of Ge on Si has great interest for various optoelectronic applications such as Ge photodiodes(1). However 4.2% of lattice mismatch causes dislocation formation and island growth. High quality Ge(001) growth techniques are reported in ref.(2-4). Moreover, Ge(111) surface is also interesting because of higher carrier mobility(5). Furthermore, Ge(110) is preferred orientation of virtual substrates for epitaxial graphene growth(6). In the case of the Ge deposition on Si(111) and Si(110) substrates, it seems that the process conditions used for Ge growth on Si(001) are not su

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22

Jeon, Hyunsoo, Chongze Wang, Seho Yi, and Jun-Hyung Cho. "Origin of enhanced chemical precompression in cerium hydride $$\hbox {CeH}_{{9}}$$." Scientific Reports 10, no. 1 (2020). http://dx.doi.org/10.1038/s41598-020-73665-1.

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Abstract The rare-earth metal hydrides with clathrate structures have been highly attractive because of their promising high-$$T_{\rm{c}}$$ T c superconductivity at high pressure. Recently, cerium hydride $$\hbox {CeH}_9$$ CeH 9 composed of Ce-encapsulated clathrate H cages was synthesized at much lower pressures of 80–100 GPa, compared to other experimentally synthesized rare-earth hydrides such as $$\hbox {LaH}_{{10}}$$ LaH 10 and $$\hbox {YH}_6$$ YH 6 . Based on density-functional theory calculations, we find that the Ce 5p semicore and 4f/5d valence states strongly hybridize with the H 1s

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23

Ma, Huizhen, Yakun Tang, Bin Tang, et al. "Enhancing the electrochemical performance of semicoke‐based hard carbon anode through oxidation‐crosslinking strategy for low‐cost sodium‐ion batteries." Carbon Energy, August 26, 2024. http://dx.doi.org/10.1002/cey2.584.

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AbstractSemicoke, a coal pyrolysis product, is a cost‐effective and high‐yield precursor for hard carbon used as anode in sodium‐ion batteries (SIBs). However, as a thermoplastic precursor, semicoke inevitably graphitizes during high‐temperature carbonization, so it is not easy to form the hard carbon structure. Herein, we propose an oxidation‐crosslinking strategy to realize fusion‐to‐solid‐state pyrolysis of semicoke. The semicoke is first preoxidized using a modified alkali‐oxygen oxidation method to enrich its surface with carboxyl groups, which are localization points and the cross‐linkin

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24

Thuy, Pham Thi, and Bui Xuan Vuong. "Study Study on photoluminescence properties of porous GaP material." VNU Journal of Science: Natural Sciences and Technology 34, no. 1 (2018). http://dx.doi.org/10.25073/2588-1140/vnunst.4703.

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This paper reports on the photoluminescence of porous GaPprepared by electrochemical anodization of (111)-oriented bulk material.Porous and bulk GaP exhibits green and red photoluminescence, respectively when excited by the 355-nm laser. The photoluminescence intensity of porous GaP is much stronger than that of the bulk sample. Temperature-dependent time-resolved photoluminescence shows that the green emission gradually decreases when the temperature increases and the photoluminescence full width at haft maximum (FWHM) slightly narrow with decreasing temperature. These results assigned to the

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25

Ferraro, Antonio, Dimitrios C. Zografopoulos, Roberto Caputo, and Romeo Beccherelli. "Terahertz polarizing component on cyclo-olefin polymer." March 31, 2017. https://doi.org/10.4302/plp.v9i1.699.

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Wire-grid polarizers constitute a traditional component for the control of polarization in free-space devices that operate in a broad part of the electromagnetic spectrum. Here, we present an aluminium-based THz wire grid polarizer, fabricated on a sub-wavelength thin flexible and conformal foil of Zeonor polymer having a thickness of 40um. The fabricated device,characterized by means of THz time-domain spectroscopy, exhibitsa high extinction ratio between 30 and 45dB in the 0.3-2.1THz range. The insertion losses oscillate between 0 and 1.1dB andthey stemalmost exclusively from moderate Fabry-

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26

Huu Tho, Nguyen, and Trang Thanh Tu. "The Geometries, Stabilities and Electronic Property of Cationic Vanadium Doped Germanium Cluster GenV+ (n=9-13) from Density Functional Theory." VNU Journal of Science: Natural Sciences and Technology 35, no. 4 (2019). http://dx.doi.org/10.25073/2588-1140/vnunst.4946.

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Geometries associated relative stabilities, averaged binding energy, fragmentation energy, second-order energy difference and energy gaps of V-doped germanium cationic clusters GenV+ (n = 9-13) have been investigated by using density functional theory with the BP86 exchange-correlation potential and effective core potential (ECP) LanL2DZ basis sets. Natural population analysis charge is also examined to understand the associated charge transfer in structures of clusters. When an electron is removed from neutral cluster GenV to form the cation cluster GenV+, geometric structure of the lowest en

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