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1

Hoa, Phan L. P., Gunnar Suchaneck, and Gerald Gerlach. "Messunsicherheit piezoresistiver Sensoren (Uncertainty in the Measurement of Piezoresistive Sensors)." tm - Technisches Messen 72, no. 2-2005 (2005): 77–82. http://dx.doi.org/10.1524/teme.72.2.77.58571.

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2

Gerlach, Gerald, and Roland Werthschützky. "50 Jahre Entdeckung des piezoresistiven Effekts – Geschichte und Entwicklungsstand piezoresistiver Sensoren (50 Years of Piezoresistive Sensors – History and State of the Art of Piezoresistive Sensors)." tm - Technisches Messen 72, no. 2-2005 (2005): 53–76. http://dx.doi.org/10.1524/teme.72.2.53.58572.

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3

Zarnik, Marina, and Darko Belavic. "The Effect of Humidity on the Stability of LTCC Pressure Sensors." Metrology and Measurement Systems 19, no. 1 (2012): 133–40. http://dx.doi.org/10.2478/v10178-012-0012-0.

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The Effect of Humidity on the Stability of LTCC Pressure SensorsLTCC-based pressure sensors are promising candidates for wet-wet applications in which the effect of the surrounding media on the sensor's characteristics is of key importance. The effect of humidity on the sensor's stability can be a problem, particularly in the case of capacitive sensors. A differential mode of operation can be a good solution, but manufacturing the appropriate sensing capacitors remains a major challenge. In the case of piezoresistive sensors the influence of humidity is less critical, but it still should be considered as an important parameter when designing sensors for low-pressure ranges. In this paper we discuss the stability of the sensors' offset characteristics, which was inspected closely using experimental and numerical analyses.
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4

Zarnik, Marina Santo, and Darko Belavic. "Stability of a Piezoresistive Ceramic Pressure Sensor Made With LTCC Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (2012): 000371–76. http://dx.doi.org/10.4071/cicmt-2012-wa45.

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This paper discusses the stability of a piezoresistive, LTCC-based, pressure sensor that was designed for measurements in a low-pressure range below 100 mbar. The intrinsic stability of the sensor's offset was evaluated at a constant ambient temperature and different conditions regarding the atmospheric humidity. The sensors were also subjected to functional fatigue tests, which included a full-scale and an overload pressure cycling. The results of the fatigue testing revealed the vulnerability of the sensor's structure from the point of view of the long-term stability and the life-cycle. Nevertheless, the stability of the key characteristics of the prototype sensors was found to be satisfactory for accurate measurements in the low-pressure ranges.
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5

Charara, Mohammad, Mohammad Abshirini, Mrinal C. Saha, M. Cengiz Altan, and Yingtao Liu. "Highly sensitive compression sensors using three-dimensional printed polydimethylsiloxane/carbon nanotube nanocomposites." Journal of Intelligent Material Systems and Structures 30, no. 8 (2019): 1216–24. http://dx.doi.org/10.1177/1045389x19835953.

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This article presents three-dimensional printed and highly sensitive polydimethylsiloxane/multi-walled carbon nanotube sensors for compressive strain and pressure measurements. An electrically conductive polydimethylsiloxane/multi-walled carbon nanotube nanocomposite is developed to three-dimensional print compression sensors in a freestanding and layer-by-layer manner. The dispersion of multi-walled carbon nanotubes in polydimethylsiloxane allows the uncured nanocomposite to stand freely without any support throughout the printing process. The cross section of the compression sensors is examined under scanning electron microscope to identify the microstructure of nanocomposites, revealing good dispersion of multi-walled carbon nanotubes within the polydimethylsiloxane matrix. The sensor’s sensitivity was characterized under cyclic compression loading at various max strains, showing an especially high sensitivity at lower strains. The sensing capability of the three-dimensional printed nanocomposites shows minimum variation at various applied strain rates, indicating its versatile potential in a wide range of applications. Cyclic tests under compressive loading for over 8 h demonstrate that the long-term sensing performance is consistent. Finally, in situ micromechanical compressive tests under scanning electron microscope validated the sensor’s piezoresistive mechanism, showing the rearrangement, reorientation, and bending of the multi-walled carbon nanotubes under compressive loads, were the main reasons that lead to the piezoresistive sensing capabilities in the three-dimensional printed nanocomposites.
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6

Rangelow, I. W., P. Grabiec, T. Gotszalk, and K. Edinger. "Piezoresistive SXM sensors." Surface and Interface Analysis 33, no. 2 (2002): 59–64. http://dx.doi.org/10.1002/sia.1162.

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7

Raji, Rafiu King, Xuhong Miao, Shu Zhang, Yutian Li, and Ailan Wan. "Influence of Rib Structure and Elastic Yarn Type Variations on Textile Piezoresistive Strain Sensor Characteristics." Fibres and Textiles in Eastern Europe 26, no. 5(131) (2018): 24–31. http://dx.doi.org/10.5604/01.3001.0012.2527.

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Production parameters have been established to play a fundamental role in dictating the physical characteristics and sensing properties of knitted sensors. This research studied the influence of yarn type and rib fabric structure variation on the physical, tensile and conductive properties and sensitivity performance of knitted underwear strain sensors to be used for breathing mensuration. Four different structures in 1×1, 1×2, 1×3 and 2×2 mock ribs were knitted using covered elastic (CY) and bare strand elastic yarn (BS) combinations. These two parameters proffered unique physical, conductive and tensile characteristics to the samples. Wear and machine tests were conducted to ascertain the sensor’s piezoresistive responses. The machine test showed a higher piezoresistive response, with an average peak value (APV) from 1.70Ω to 0.24Ω, while those for the wear test recorded were around 0.0110Ω to 1.867Ω for all sample categories. However, sensors knitted with covered elastic yarns produced the best breathing test results (APV of 1.089Ω – 1.86Ω) compared to bare strand elastic yarns (APV 0.0027Ω - 0.0790Ω) when used in a wearable environment. Fabric structure variation had influences on both conductive and tensile characteristics; however, the effects on the piezoresistive response were negligible. The influences of the unique characteristics provided by these core parameters on sensor resistance values, piezoresistance, aging, ease of deformation and dimensional stability have also been discussed.
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8

Al-Handarish, Yousef, Olatunji Mumini Omisore, Wenke Duan, et al. "Facile Fabrication of 3D Porous Sponges Coated with Synergistic Carbon Black/Multiwalled Carbon Nanotubes for Tactile Sensing Applications." Nanomaterials 10, no. 10 (2020): 1941. http://dx.doi.org/10.3390/nano10101941.

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Recently, flexible tactile sensors based on three-dimensional (3D) porous conductive composites, endowed with high sensitivity, a wide sensing range, fast response, and the capability to detect low pressures, have aroused considerable attention. These sensors have been employed in different practical domain areas such as artificial skin, healthcare systems, and human–machine interaction. In this study, a facile, cost-efficient method is proposed for fabricating a highly sensitive piezoresistive tactile sensor based on a 3D porous dielectric layer. The proposed sensor is designed with a simple dip-coating homogeneous synergetic conductive network of carbon black (CB) and multi-walled carbon nanotube (MWCNTs) composite on polydimethysiloxane (PDMS) sponge skeletons. The unique combination of a 3D porous structure, with hybrid conductive networks of CB/MWCNTs displayed a superior elasticity, with outstanding electrical characterization under external compression. The piezoresistive tactile sensor exhibited a high sensitivity of (15 kPa−1), with a rapid response time (100 ms), the capability of detecting both large and small compressive strains, as well as excellent mechanical deformability and stability over 1000 cycles. Benefiting from a long-term stability, fast response, and low-detection limit, the piezoresistive sensor was successfully utilized in monitoring human physiological signals, including finger heart rate, pulses, knee bending, respiration, and finger grabbing motions during the process of picking up an object. Furthermore, a comprehensive performance of the sensor was carried out, and the sensor’s design fulfilled vital evaluation metrics, such as low-cost and simplicity in the fabrication process. Thus, 3D porous-based piezoresistive tactile sensors could rapidly promote the development of high-performance flexible sensors, and make them very attractive for an enormous range of potential applications in healthcare devices, wearable electronics, and intelligent robotic systems.
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9

Chi, Yung-Wei, Kuo-Hao Tseng, Ruya Li, and Tingrui Pan. "Comparison of piezoresistive sensor to PicoPress® in in-vitro interface pressure measurement." Phlebology: The Journal of Venous Disease 33, no. 5 (2017): 315–20. http://dx.doi.org/10.1177/0268355517705292.

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Objective Interface pressure, the sine qua non for compression therapy, is rarely measured in clinical practice and scientific research. The goal of this study aimed to compare and examine the accuracy between a commercially available piezoresistive sensor and PicoPress® (Microlab, Padua, Italy) using the cylinder cuff model to measure in-vitro interface pressure. Method Ten piezoresistive sensors were calibrated using the National Institute of Standard and Technology certified manometer, and compared to PicoPress® using cylinder cuff model from 20 to 120 mmHg. Two statistical analyses were performed: (a) two-sample t-test to compare the front to back surface of the piezoresistive sensors using mean pressure value and (b) one-sample paired t-test to compare the front and back surface of the piezoresistive sensors to PicoPress® and true pressure using mean pressure value. Result There was no difference in interface pressure measurement between the front and back surface of the piezoresistive sensors (P > 0.05). Using mean pressure value, there was no significant difference between the front surface, back surface of the piezoresistive sensors, and PicoPress® (P > 0.05). Standard deviation was larger for the piezoresistive sensors than PicoPress® at any given pressure and this difference was more pronounced in the higher pressure range. Conclusion Piezoresistive sensor may represent a viable alternative to PicoPress® in interface pressure measurement.
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10

Obitayo, Waris, and Tao Liu. "A Review: Carbon Nanotube-Based Piezoresistive Strain Sensors." Journal of Sensors 2012 (2012): 1–15. http://dx.doi.org/10.1155/2012/652438.

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The use of carbon nanotubes for piezoresistive strain sensors has acquired significant attention due to its unique electromechanical properties. In this comprehensive review paper, we discussed some important aspects of carbon nanotubes for strain sensing at both the nanoscale and macroscale. Carbon nanotubes undergo changes in their band structures when subjected to mechanical deformations. This phenomenon makes them applicable for strain sensing applications. This paper signifies the type of carbon nanotubes best suitable for piezoresistive strain sensors. The electrical resistivities of carbon nanotube thin film increase linearly with strain, making it an ideal material for a piezoresistive strain sensor. Carbon nanotube composite films, which are usually fabricated by mixing small amounts of single-walled or multiwalled carbon nanotubes with selected polymers, have shown promising characteristics of piezoresistive strain sensors. Studies also show that carbon nanotubes display a stable and predictable voltage response as a function of temperature.
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11

Thuau, D., C. Ayela, P. Poulin, and I. Dufour. "Highly piezoresistive hybrid MEMS sensors." Sensors and Actuators A: Physical 209 (March 2014): 161–68. http://dx.doi.org/10.1016/j.sna.2014.01.037.

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12

Liu, Xinyu, Martin Mwangi, XiuJun Li, Michael O'Brien, and George M. Whitesides. "Paper-based piezoresistive MEMS sensors." Lab on a Chip 11, no. 13 (2011): 2189. http://dx.doi.org/10.1039/c1lc20161a.

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13

Oerke, Alexa, Christina König, Stephanus Büttgenbach, and Andreas Dietzel. "Investigation of Different Piezoresistive Materials to be Integrated into Micromechanical Force Sensors Based on SU 8 Photoresist." Key Engineering Materials 613 (May 2014): 244–50. http://dx.doi.org/10.4028/www.scientific.net/kem.613.244.

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The aim of this scientific work is to present different piezoresistive materials suitable to be integrated into micromechanical force sensors. As material for the mechanical structure of the sensors SU-8 has been chosen because it features favorable characteristics, such as flexible and simple fabrication of micro components through the use of standard UV lithography for forming three dimensional geometries such as cantilevers and membranes. In addition, on the basis of a significantly lower Young’s modulus compared to silicon, great opportunities to improve the force sensitivity of such sensors are offered by SU-8.However, SU-8 photoresist does not have piezoresistive properties, and therefore it has to be combined with an additional, beneficial piezoresistive material. A well-controlled and frequently used material for piezoresistive elements is doped silicon. This paper provides an overview of characteristics such as gauge factor and temperature coefficient of resistance (TCR) for a variety of commonly used piezoresistive materials, namely metals, silicon, conductive composite materials and diamond-like carbon. As a characteristic factor for the estimated sensitivity of the force sensor, the ratio of the gauge factor k to the Young´s modulus E of the structural material is presented for the different material combinations. A classification of conventional silicon based tactile force sensors is made to build a basis for comparison. Furthermore the suitability of different piezoresistive materials for the integration into an SU 8-based sensor is investigated.
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14

Lwo, Ben-Je, Tung-Sheng Chen, Ching-Hsing Kao, and Yu-Lin Lin. "In-Plane Packaging Stress Measurements Through Piezoresistive Sensors." Journal of Electronic Packaging 124, no. 2 (2002): 115–21. http://dx.doi.org/10.1115/1.1452244.

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In our previous works, the piezoresistive sensors have been demonstrated to be accurate and efficient tools for stress measurements in microelectronic packaging. In this study, we first designed test chips with piezoresistive stress sensors, temperature sensors as well as heats, and the test wafers were next manufactured through commercialized IC processes. Piezoresistive sensors on silicon strips, which were cut directly from silicon wafers at a specific angle, were then calibrated, and highly consistent piezoresistive coefficients were extracted at various wafer sites so that both normal and shear stress on the test chips can be measured. Finally, we packaged the test chips into 100-pin PQFP structures with different batches and measured internal stresses on the test chips inside the packaging. After measuring packaging induced stresses as well as thermal stresses on several batches of PQFPs, it was found that the normal stress diversities were obvious from different batches of the packaging structure, and the shearing stresses were approximately zero in all of the PQFPs at different chip site.
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15

Tellier, C. R., and Stephane Durand. "GaAs Non Resonant Micro-Sensors: Design and Simulations." Advances in Science and Technology 54 (September 2008): 428–33. http://dx.doi.org/10.4028/www.scientific.net/ast.54.428.

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This paper reports on the design of piezoresistive GaAs sensors and focuses on non conventional orientations. The piezoresistive detection of in-plane longitudinal and shear stresses is studied to determine the best orientations for pressure and force sensors. Simulation of shapes for micromachined membranes and cantilevers allows us to select some (hk0) orientations for which the sensitivity is evaluated.
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16

Tortonese, M., and F. J. Giessibl. "Atomic-Force Microscopy with piezoresistive cantilevers." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 1064–65. http://dx.doi.org/10.1017/s0424820100173054.

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The atomic force microscope (AFM) works by measuring the deflection of a cantilever as it is scanned over a sample. A sharp tip at the end of the cantilever is responsible for the high lateral resolution achieved with the AFM. There are several ways to measure the deflection of the cantilever. The technique used to measure the deflection of the cantilever most often dictates the mechanical complexity and stability of the instrument. Electron tunneling, interferometry and capacitive sensors have been used successfully. The most common way to measure the cantilever deflection is by means of an optical deflection detector.The piezoresistivc cantilever offers a new way to measure the deflection of the cantilever, with performances comparable to the performances of other deflection detectors, and with the advantage that the sensor is incorporated in the cantilever. This simplifies the design and operation of the microscope In particular, the piezoresistive cantilever facilitates the use and often improves the performances of an AFM when operated in ultra high vacuum (UHV), at low temperature, or when used to image large samples.
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Chen, Jinyan, Van-Thai Tran, Hejun Du, Junshan Wang, and Chao Chen. "A Direct-Writing Approach for Fabrication of CNT/Paper-Based Piezoresistive Pressure Sensors for Airflow Sensing." Micromachines 12, no. 5 (2021): 504. http://dx.doi.org/10.3390/mi12050504.

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Airflow sensor is a crucial component for monitoring environmental airflow conditions in many engineering fields, especially in the field of aerospace engineering. However, conventional airflow sensors have been suffering from issues such as complexity and bulk in structures, high cost in fabrication and maintenance, and low stability and durability. In this work, we developed a facile direct-writing method for fabricating a low-cost piezoresistive element aiming at high-performance airflow sensing, in which a commercial pen was utilized to drop solutions of single-walled carbon nanotubes onto tissue paper to form a piezoresistive sensing element. The encapsulated piezoresistive element was tested for electromechanical properties under two loading modes: one loading mode is the so-called pressure mode in which the piezoresistive element is pressed by a normal pressure, and another mode is the so-called bending mode in which the piezoresistive element is bended as a cantilever beam. Unlike many other developed airflow sensors among which the sensing elements are normally employed as cantilever beams for facing winds, we designed a fin structure to be incorporated with the piezoresistive element for airflow sensing; the main function of the fin is to face winds instead of the piezoresistive element, and subsequently transfer and enlarge the airflow pressure to the piezoresistive element for the normal pressure loading mode. With this design, the piezoresistive element can also be protected by avoiding experiencing large strains and direct contact with external airflows so that the stability and durability of the sensor can be maintained. Moreover, we experimentally found that the performance parameters of the airflow sensor could be effectively tuned by varying the size of the fin structure. When the fin sizes of the airflow sensors were 20 mm, 30 mm, and 40 mm, the detection limits and sensitivities of the fabricated airflow sensors were measured as 8.2 m/s, 6.2 m/s, 3.2 m/s, 0.0121 (m/s)−2, 0.01657 (m/s)−2, and 0.02264 (m/s)−2, respectively. Therefore, the design of the fin structure could pave an easy way for adjusting the sensor performance without changing the sensor itself toward different application scenarios.
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Shi, Yun Bo, and Xiang Li. "Varistor Characteristic Analysis of the Piezoresistive Sensors." Applied Mechanics and Materials 494-495 (February 2014): 997–1000. http://dx.doi.org/10.4028/www.scientific.net/amm.494-495.997.

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In the process of the piezoresistive sensor design, the placement of varistor has a great influence on the sensitivity of the sensor.In this paper, three theoretical models of piezoresistive sensor are established.The stress simulation analysis of the different varistor path way placed on the cantilever beam is conducted in Ansys software. The sensitivities of the axis and transverse direction are calcuated and compared by Matlab compiler. The results show that the placement of varistor which is parallel to the cantilever beam is the most optimal choice.
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Gong, Taobo, You Zhao, Yulong Zhao, Lukang Wang, Yu Yang, and Wei Ren. "Design and Manufacturing of a High-Sensitivity Cutting Force Sensor Based on AlSiCO Ceramic." Micromachines 12, no. 1 (2021): 63. http://dx.doi.org/10.3390/mi12010063.

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On-line cutting force measurement is an effective way to monitor processing quality, improve processing accuracy, and protect the tool. In high-speed and ultra-precision machining, status monitoring is particularly necessary to ensure machining accuracy. However, the cutting force is very small in high speed and ultra-precision machining. Therefore, high-sensitivity cutting force sensors are needed. Current commercial cutting force sensors have defects such as large volume, low compatibility, and high price. In particular, the sensitivity of cutting force sensor needs to be improved for high-speed and ultra-precision machining status monitoring. This paper provides a possible solution by embedding the sensor in the tool and selecting sensitive materials with high piezoresistive coefficient. In this paper, the structural design of the sensor and the fabrication of the sensitive material SiAlCO ceramic are carried out, and then the sensor is packaged and tested. The test results show that the cutting force sensor’s sensitivity was as high as 219.38 mV/N, which is a feasible way to improve cutting force sensor’s compatibility and sensitivity.
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Gong, Taobo, You Zhao, Yulong Zhao, Lukang Wang, Yu Yang, and Wei Ren. "Design and Manufacturing of a High-Sensitivity Cutting Force Sensor Based on AlSiCO Ceramic." Micromachines 12, no. 1 (2021): 63. http://dx.doi.org/10.3390/mi12010063.

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On-line cutting force measurement is an effective way to monitor processing quality, improve processing accuracy, and protect the tool. In high-speed and ultra-precision machining, status monitoring is particularly necessary to ensure machining accuracy. However, the cutting force is very small in high speed and ultra-precision machining. Therefore, high-sensitivity cutting force sensors are needed. Current commercial cutting force sensors have defects such as large volume, low compatibility, and high price. In particular, the sensitivity of cutting force sensor needs to be improved for high-speed and ultra-precision machining status monitoring. This paper provides a possible solution by embedding the sensor in the tool and selecting sensitive materials with high piezoresistive coefficient. In this paper, the structural design of the sensor and the fabrication of the sensitive material SiAlCO ceramic are carried out, and then the sensor is packaged and tested. The test results show that the cutting force sensor’s sensitivity was as high as 219.38 mV/N, which is a feasible way to improve cutting force sensor’s compatibility and sensitivity.
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21

Miao, Y., L. Chen, Y. Lin, R. Sammynaiken, and W. J. Zhang. "On finding of high piezoresistive response of carbon nanotube films without surfactants for in-plane strain detection." Journal of Intelligent Material Systems and Structures 22, no. 18 (2011): 2155–59. http://dx.doi.org/10.1177/1045389x11426179.

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The use of carbon nanotubes (CNTs) for construction of sensors is promising. This is due to some unique characteristics of CNTs. In recent years, strain sensors built from CNT composite films have been developed; however, their low piezoresistive sensitivity (gauge factor (GF)) in in-plane strain detection is a concern compared with other strain sensors. This article reports an experimental discovery of the superior piezoresistive response of a CNT film that is free of surfactants, known as the pure CNT film. The mechanism for the high GF with the pure CNT film strain sensors is also discussed.
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22

Wohlgemuth, Christian, Peter Lotz, and Roland Werthschützky. "Fehlerkorrektur piezoresistiver Drucksensoren mit optimierter Kalibrierung des Signalwandlers (Error Correction of Piezoresistive Pressure Sensors by Optimised Signal Conditioner Calibration)." tm - Technisches Messen 72, no. 2-2005 (2005): 83–92. http://dx.doi.org/10.1524/teme.72.2.83.58566.

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23

Dai, Keren, Xiaofeng Wang, Zheng You, and He Zhang. "Pressure Sensitivity Enhancement of Porous Carbon Electrode and Its Application in Self-Powered Mechanical Sensors." Micromachines 10, no. 1 (2019): 58. http://dx.doi.org/10.3390/mi10010058.

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Microsystems with limited power supplies, such as electronic skin and smart fuzes, have a strong demand for self-powered pressure and impact sensors. In recent years, new self-powered mechanical sensors based on the piezoresistive characteristics of porous electrodes have been rapidly developed, and have unique advantages compared to conventional piezoelectric sensors. In this paper, in order to optimize the mechanical sensitivity of porous electrodes, a material preparation process that can enhance the piezoresistive characteristics is proposed. A flexible porous electrode with superior piezoresistive characteristics and elasticity was prepared by modifying the microstructure of the porous electrode material and adding an elastic rubber component. Furthermore, based on the porous electrode, a self-powered pressure sensor and an impact sensor were fabricated. Through experimental results, the response signals of the sensors present a voltage peak under such mechanical effects and the sensitive signal has less clutter, making it easy to identify the features of the mechanical effects.
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Tian, Bian, Yulong Zhao, and Zhuangde Jiang. "The novel structural design for pressure sensors." Sensor Review 30, no. 4 (2010): 305–13. http://dx.doi.org/10.1108/02602281011072189.

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PurposeThe purpose of this paper is to investigate the disadvantages of traditional sensors and establish a new structure for pressure measurement.Design/methodology/approachA kind of novel piezoresistive micro‐pressure sensor with a cross‐beam membrane (CBM) structure is designed based on the silicon substrate. Through analyzing the stress distribution of the new structure by finite element method, the model of structure is established and compared with traditional structures. The fabrication is operated on silicon wafer, which applies the technology of anisotropy chemical etching and inductively coupled plasma.FindingsCompared to the traditional C‐ and E‐type structures, this new CBM structure has the advantages of low nonlinearity and high sensitivities by the cross‐beam on the membrane, which cause the stress is more concentrated in sensitive area and the deflections that relate to the linearity are decreased.Originality/valueThe paper provides the first empirical reports on the new piezoresistive structure for the pressure measurement by fabricating a cross‐beam on the membrane and resolving the conflict of nonlinearity and sensitivity of the piezoresistive sensors.
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Lwo, Ben-Je, and Shen-Yu Wu. "Calibrate Piezoresistive Stress Sensors Through the Assembled Structure." Journal of Electronic Packaging 125, no. 2 (2003): 289–93. http://dx.doi.org/10.1115/1.1572904.

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In this work, a simple assembled structure was designed and fabricated so that the calibration procedures on piezoresistive stress sensors for microelectronic packaging can be simpler, more accurate, and more efficient. After comparing with the previous work results, validity of the aforementioned new structure has been demonstrated through experimental data. Since many accessory experimental facilities employed in traditional calibrations become unnecessary, the new methodology takes great advantage on piezoresistive coefficient extractions, especially for calibration at temperature other than room temperature.
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Lwo, Ben-Je, Ching-Hsing Kao, Tung-Sheng Chen, and Yao-Shing Chen. "On the Study of Piezoresistive Stress Sensors for Microelectronic Packaging." Journal of Electronic Packaging 124, no. 1 (2000): 22–26. http://dx.doi.org/10.1115/1.1414134.

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Stress measurements in microelectronic packaging through piezoresistive sensors take the advantage of both in-situ and nondestructive. In this study, test chips with both p-type and n-type piezoresistive stress sensors, as well as a heat source, were first designed, then manufactured by a commercialized foundry so that the uniformity of the test chips was expected. Both temperature and stress calibrations were next performed through a special designed MQFP (Metal Quad Flat Package) and four-point bending (4PB) structure, respectively. Measurements of stresses which are produced due to both manufacturing process and thermal effects on the test chips were finally executed, and approximately linear relationships were observed between stress and temperature as well as stress and input power. It is concluded that n-type piezoresistive stress sensors are able to extract stress in microelectronic packaging with good accuracy.
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Ma, Chao Zhe, Jin Song Du, and Yi Yang Liu. "Research on PVDF Micro-Force Sensor." Applied Mechanics and Materials 599-601 (August 2014): 1135–38. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.1135.

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At present, sub-micro-Newton (sub-μN) micro-force in micro-assembly and micro-manipulation is not able to be measured reliably. The piezoelectric micro-force sensors offer a lot of advantages for MEMS applications such as low power dissipation, high sensitivity, and easily integrated with piezoelectric micro-actuators. In spite of many advantages above, the research efforts are relatively limited compared to piezoresistive micro-force sensors. In this paper, Sensitive component is polyvinylidene fluoride (PVDF) and the research object is micro-force sensor based on PVDF film. Moreover, the model of micro-force and sensor’s output voltage is built up, signal processing circuit is designed, and a novel calibration method of micro-force sensor is designed to reliably measure force in the range of sub-μN. The experimental results show the PVDF sensor is designed in this paper with sub-μN resolution.
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28

Yin, Tsung-I., and Tien Anh Nguyen. "Molecules sensing layer design of piezoresistive cantilever sensor for higher surface stress sensitivity." Vietnam Journal of Mechanics 34, no. 4 (2012): 311–20. http://dx.doi.org/10.15625/0866-7136/34/4/2345.

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This paper reports on molecular sensing layer design of a piezoresistive cantilever sensor for higher surface stress sensitivity. The proposed analyses show that the previous understanding of piezoresistive cantilevers for surface stress measurement requires reconsideration for a cantilever utilizing polycrystalline silicon as a piezoresistor. The integration of the molecular sensing layer stripe pattern design to the cantilever effectively improves the piezoresistive output and utilizes the full sensing area of the cantilever surface. The proposed sensing layer design can be effectively integrated to current piezoresistive cantilever sensors to improve sensor performance in biochemical assays.
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Romeo, Rocco, Calogero Oddo, Maria Carrozza, Eugenio Guglielmelli, and Loredana Zollo. "Slippage Detection with Piezoresistive Tactile Sensors." Sensors 17, no. 8 (2017): 1844. http://dx.doi.org/10.3390/s17081844.

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Ren, Tian-Ling, He Tian, Dan Xie, and Yi Yang. "Flexible Graphite-on-Paper Piezoresistive Sensors." Sensors 12, no. 5 (2012): 6685–94. http://dx.doi.org/10.3390/s120506685.

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SAN Hai-sheng, 伞海生, 宋子军 SONG Zi-jun, 王翔 WANG Xiang, 赵燕立 ZHAO Yan-li, and 余煜玺 YU Yu-xi. "Piezoresistive pressure sensors for harsh environments." Optics and Precision Engineering 20, no. 3 (2012): 550–55. http://dx.doi.org/10.3788/ope.20122003.0550.

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Zheng, Qingbin, Jeng-hun Lee, Xi Shen, Xiaodong Chen, and Jang-Kyo Kim. "Graphene-based wearable piezoresistive physical sensors." Materials Today 36 (June 2020): 158–79. http://dx.doi.org/10.1016/j.mattod.2019.12.004.

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Gotszalk, Teodor, Piotr Grabiec, and Ivo W. Rangelow. "Piezoresistive sensors for scanning probe microscopy." Ultramicroscopy 82, no. 1-4 (2000): 39–48. http://dx.doi.org/10.1016/s0304-3991(99)00171-0.

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Lee, J., R. Chunara, W. Shen, et al. "Suspended microchannel resonators with piezoresistive sensors." Lab Chip 11, no. 4 (2011): 645–51. http://dx.doi.org/10.1039/c0lc00447b.

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Beroulle, Vincent, Yves Bertrand, Laurent Latorre, and Pascal Nouet. "Monolithic piezoresistive CMOS magnetic field sensors." Sensors and Actuators A: Physical 103, no. 1-2 (2003): 23–32. http://dx.doi.org/10.1016/s0924-4247(02)00317-5.

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36

Buchhold, R., A. Nakladal, G. Gerlach, and P. Neumann. "Design studies on piezoresistive humidity sensors." Sensors and Actuators B: Chemical 53, no. 1-2 (1998): 1–7. http://dx.doi.org/10.1016/s0925-4005(98)00297-4.

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Melnykowycz, Mark, Birgit Koll, Dagobert Scharf, and Frank Clemens. "Comparison of Piezoresistive Monofilament Polymer Sensors." Sensors 14, no. 1 (2014): 1278–94. http://dx.doi.org/10.3390/s140101278.

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Roth, F., C. Schmerbauch, E. Ionescu, N. Nicoloso, O. Guillon, and R. Riedel. "High-temperature piezoresistive C / SiOC sensors." Journal of Sensors and Sensor Systems 4, no. 1 (2015): 133–36. http://dx.doi.org/10.5194/jsss-4-133-2015.

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Abstract. Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
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Pedrali, Patricia Carolina, Luiz Antonio Rasia, Antonio Carlos Valdiero, and Mariana Amorim Fraga. "Graphite Piezoresistive Sensors in Polymeric Substrates." International Journal of Advanced Engineering Research and Science 5, no. 10 (2018): 105–9. http://dx.doi.org/10.22161/ijaers.5.10.14.

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Sagar, Prem, and S. Kal. "Modeling of Micromachined Piezoresistive Pressure Sensors." IETE Journal of Research 52, no. 1 (2006): 11–16. http://dx.doi.org/10.1080/03772063.2006.11416435.

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41

Hencke, Henri. "Piezoresistive sensors: the pressure goes on." Sensor Review 9, no. 3 (1989): 137–39. http://dx.doi.org/10.1108/eb060032.

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Guenther, Margarita, Gerald Gerlach, and Thomas Wallmersperger. "Piezoresistive biochemical sensors based on hydrogels." Microsystem Technologies 16, no. 5 (2009): 703–15. http://dx.doi.org/10.1007/s00542-009-0978-z.

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43

Akbar, Muhammad, and Michael A. Shanblatt. "Temperature compensation of piezoresistive pressure sensors." Sensors and Actuators A: Physical 33, no. 3 (1992): 155–62. http://dx.doi.org/10.1016/0924-4247(92)80161-u.

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Searle, Thomas, Vitor Sencadas, Jonathan Greaves, and Gursel Alici. "Room-temperature self-healing piezoresistive sensors." Composites Science and Technology 211 (July 2021): 108856. http://dx.doi.org/10.1016/j.compscitech.2021.108856.

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Yan, Chao, Jian Ning Ding, Zong Xing Li, and Chao Min Mao. "Digital Calibration for Current-Loop Output of Piezoresistive Sensors." Advanced Materials Research 143-144 (October 2010): 744–48. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.744.

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The precision of piezoresistive sensors is low between wide temperature range .The conditioning result isn’t ideal by analog approaches. Also the efficiency is very low. To improve this condition , a digital approach is introduced. It coverts sensors’ analog signal to digital value, and then uses polynomial and coefficients stored in singlechip to correct the digital value. At last , the singlechip coverts corrected digital value to analog signal to output. Its conditioning principle and calibration process is also described. We realized 4-to-20mA-current-loop-output of piezoresistive sensors using this aprroch. Calibration results show this method is efficient and low cost.
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46

Fortunato, Marco, Irene Bellagamba, Alessio Tamburrano, and Maria Sabrina Sarto. "Flexible Ecoflex®/Graphene Nanoplatelet Foams for Highly Sensitive Low-Pressure Sensors." Sensors 20, no. 16 (2020): 4406. http://dx.doi.org/10.3390/s20164406.

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The high demand for multifunctional devices for smart clothing applications, human motion detection, soft robotics, and artificial electronic skins has encouraged researchers to develop new high-performance flexible sensors. In this work, we fabricated and tested new 3D squeezable Ecoflex® open cell foams loaded with different concentrations of graphene nanoplatelets (GNPs) in order to obtain lightweight, soft, and cost-effective piezoresistive sensors with high sensitivity in a low-pressure regime. We analyzed the morphology of the produced materials and characterized both the mechanical and piezoresistive response of samples through quasi-static cyclic compression tests. Results indicated that sensors infiltrated with 1 mg of ethanol/GNP solution with a GNP concentration of 3 mg/mL were more sensitive and stable compared to those infiltrated with the same amount of ethanol/GNP solution but with a lower GNP concentration. The electromechanical response of the sensors showed a negative piezoresistive behavior up to ~10 kPa and an opposite trend for the 10–40 kPa range. The sensors were particularly sensitive at very low deformations, thus obtaining a maximum sensitivity of 0.28 kPa−1 for pressures lower than 10 kPa.
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Pan, Hai Bin, Jian Ning Ding, Guang Gui Cheng, and Hui Juan Fan. "FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor." Key Engineering Materials 464 (January 2011): 208–12. http://dx.doi.org/10.4028/www.scientific.net/kem.464.208.

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In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigated based on numerical simulation with Finite Element Method (FEM). The simulation results show that twin-island’s location has great effect on the stress distributions in sensor chips’ diaphragms and the sensitivity of piezoresistive pressure sensors, compared with the twin-island’s width.
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Kim, Myoungsuk, Jaebong Jung, Sungmook Jung, Young Hoon Moon, Dae-Hyeong Kim, and Ji Hoon Kim. "Piezoresistive Behaviour of Additively Manufactured Multi-Walled Carbon Nanotube/Thermoplastic Polyurethane Nanocomposites." Materials 12, no. 16 (2019): 2613. http://dx.doi.org/10.3390/ma12162613.

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To develop highly sensitive flexible pressure sensors, the mechanical and piezoresistive properties of conductive thermoplastic materials produced via additive manufacturing technology were investigated. Multi-walled carbon nanotubes (MWCNTs) dispersed in thermoplastic polyurethane (TPU), which is flexible and pliable, were used to form filaments. Specimens of the MWCNT/TPU composite with various MWCNT concentrations were printed using fused deposition modelling. Uniaxial tensile tests were conducted, while the mechanical and piezoresistive properties of the MWCNT/TPU composites were measured. To predict the piezoresistive behaviour of the composites, a microscale 3D resistance network model was developed. In addition, a continuum piezoresistive model was proposed for large-scale simulations.
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Yuan, Liqian, Zhongwu Wang, Hongwei Li, et al. "Piezoresistive Pressure Sensors: Synergistic Resistance Modulation toward Ultrahighly Sensitive Piezoresistive Pressure Sensors (Adv. Mater. Technol. 4/2020)." Advanced Materials Technologies 5, no. 4 (2020): 2070018. http://dx.doi.org/10.1002/admt.202070018.

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Shi, Chang Zhi, Xiao Wei Liu, Xuan Wu, and Hai Tao Zheng. "Piezoresistive Sensitivity and Al Ohmic Contact of Highly Doped Polycrystalline Silicon Nano Thin Films." Key Engineering Materials 483 (June 2011): 789–93. http://dx.doi.org/10.4028/www.scientific.net/kem.483.789.

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The piezoresistive and ohmic contact properties of polycrystalline silicon nano thin films were investigated in this paper. The polycrystalline silicon films with different thicknesses and doping concentrations were deposited by LPCVD and doped with boron highly, and then the cantilever beam samples were fabricated by photolithography and wet etching. By measuring the gauge factor and specific contact resistivity, the specific contact resistivity of Al contacts can reach 2.4×10-3Ω·cm2 after the alloying at 450 °C for 20 min; the enhanced piezoresistive effect of highly doped polycrystalline silicon nano thin films was discovered. The conclusions indicated that the enhanced piezoresistive sensitivity of PNTFs is due to the modification of depletion region barrier by ultra high doping and film thickness thinning and the enhancement of tunneling piezoresistive effect. The distinct piezoresistive phenomenon of PNTFs could be utilized for the development and fabrication of miniature piezoresistive sensors.
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