Relevant bibliographies by topics / Sentaurus Modeling

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Academic literature on the topic 'Sentaurus Modeling'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Sentaurus Modeling"

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Kuznetsov, Maksim, Sergey Kalinin, Alexey Cherkaev, and Dmitriy Ostertak. "Investigating physical model interface in the TCAD Sentaurus environment." Transaction of Scientific Papers of the Novosibirsk State Technical University, no. 3 (November 18, 2020): 39–48. http://dx.doi.org/10.17212/2307-6879-2020-3-39-48.

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Currently, the application SDevice software package TCAD Sentaurus is a reliable tool for electrophysical simulation of silicon CMOS transistors operating in the temperature range of -60 °C – +125 °C. To adapt the modeling process to specific physical conditions of the devices, application SDevice has an extensive library of models of electrophysical parameters, in particular models of mobility or band gap energy. However, when the device operates under extreme cryogenic conditions, there is a need to rework these models using a special Physical Model Interface (PMI). The paper presents methodological features of work with PMI and results of implementation of custom parameter models for silicon devices.
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Gulomov, Jasurbek, Rayimjon Aliev, Murad Nasirov, and Jakhongir Ziyoitdinov. "MODELING METAL NANOPARTICLES INFLUENCE TO PROPERTIES OF SILICON SOLAR CELLS." International Journal of Advanced Research 8, no. 11 (November 30, 2020): 336–45. http://dx.doi.org/10.21474/ijar01/12015.

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Nanotechnologies are entering every field. Nanoparticles have been widely used in medicine and technology. We decided to study the behavior of nanoparticles under the influence of light and its effects on solar cells, based on a number of properties. How gold and silver nanoparticles are introduced into the optical layer of the solar cell has been studied enough to affect the properties of the solar cell. However, the effect of silicon-based solar cell metal nanoparticles in the n domain on the solar cell has not been sufficiently studied. In addition, in this study, the properties of solar cells, which included nanoparticles of various shapes, were modeled. Since the end of the last century, new methods of modeling have been introduced into scientific research. A lot of modeling software has been developed. They are based on a numerical method. Synopsys program of Sentaurus TCAD software package was used in the modeling to ensure the accuracy and reliability of the research. Using Sentaurus TCAD, a model of a silicon-based solar cell with simple and various shapes of platinum nanoparticles embedded in the n field was developed. The focus is on determining the effect of the shape of a nanoparticle introduced on solar cells on its properties. The effect of nanoparticles on the optical and I-V characteristics of a solar cell is also analyzed in depth.
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Jia, Yunfang, and Cheng Ju. "Sentaurus® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization." Journal of Semiconductors 37, no. 1 (January 2016): 014005. http://dx.doi.org/10.1088/1674-4926/37/1/014005.

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Passeri, D., F. Moscatelli, A. Morozzi, and G. M. Bilei. "Modeling of radiation damage effects in silicon detectors at high fluences HL-LHC with Sentaurus TCAD." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 824 (July 2016): 443–45. http://dx.doi.org/10.1016/j.nima.2015.08.039.

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Jasurbek Gulomov, Rayimjon Aliev, Murodjon Abduvoxidov, Avazbek Mirzaalimov, and Navruzbek Mirzaalimov. "Exploring optical properties of solar cells by programming and modeling." Global Journal of Engineering and Technology Advances 5, no. 1 (October 30, 2020): 032–38. http://dx.doi.org/10.30574/gjeta.2020.5.1.0080.

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One of the main factors influencing the efficiency of solar cells is their optical properties. So, most light is reflecting back and transmit through solar cell. This leads to a decrease in the efficiency. We know that the refractive index of silicon is 3-4 depending on the wavelength of light, and the refractive index of air is about 1. This causes to reflect 34 percentages of the incident light. To reduce the amount of reflected light, the surface of the solar cell should be covered with an anti-reflection layer. It is important to determine the conditions of the types and thicknesses of the material covering the surface of the solar cell. Semiconductor devices modeling has become very popular. Because the results obtained through modeling are very close to the experimental results. In this study, we also modeled the solar cell with and without an anti-reflective layer using the Sentaurus TCAD software package and presented the results obtained. A new program was developed using the C # programming language, and a library was developed to help new researchers study the optical properties of solar cells directly for that program, and a number of results were obtained.
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Armand, Jimmy, Cyril Oliver, F. Martinez, B. Semmache, M. Gauthier, Alain Foucaran, and Yvan Cuminal. "Modeling of the Boron Emitter Formation Process from BCl3 Diffusion for N-Type Silicon Solar Cells Processing." Advanced Materials Research 324 (August 2011): 261–64. http://dx.doi.org/10.4028/www.scientific.net/amr.324.261.

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This work is devoted to the study of boron doping diffusion process for n-type silicon solar cells applications. Deposition temperature is an important parameter in the diffusion process. In this paper we investigate its influence using an industrial scale furnace [1] (LYDOPTM Boron), which is developed by Semco Engineering. We especially used a numerical model (Sentaurus) in order to further understand the boron diffusion mechanism mainly with respect of the diffusion temperature. The model calibration is based on boron concentration profiles obtained by SIMS (Secondary Ion Mass Spectrometry) analysis. We observed that the boron profiles could be correctly simulated by a single fitting parameter. This parameter, noted kBoron which is connected to the chemical reaction kinetics developed at the interface between the boron silicon glass (BSG) and the silicon substrate
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Martinez-Limia, Alberto, Peter Pichler, Christian Steen, Silke Paul, and Wilfried Lerch. "Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation." Solid State Phenomena 131-133 (October 2007): 277–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.277.

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We have developed a diffusion and activation model for implanted arsenic in silicon. The model includes the dynamic formation of arsenic-vacancy complexes (As4V) as well as the precipitation of a SiAs phase. The latter is mandatory to correctly describe concentrations above solid solubility while the former are needed to describe the reduced electrical activity as well as the generation of self-interstitials during deactivation. In addition, the activation state after solid-phase epitaxy and the segregation at the interface to SiO2 are taken into account. After implementation using the Alagator language in the latest version of the Sentaurus Process Simulator of Synopsys, the parameters of the model were optimized using reported series of diffusion coefficients for temperatures between 700 °C and 1200 °C, and using several SIMS profiles covering annealing processes from spike to very long times with temperatures between 700 °C and 1050 °C and a wide distribution of implantation energies and doses. The model was validated using data from flash-assisted RTP and spike annealing of ultra-low energy arsenic implants.
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Sahoo, Sasmita, Sidhartha Dash, and Guru P. Mishra. "An Accurate Drain Current Model for Symmetric Dual Gate Tunnel FET Using Effective Tunneling Length." Nanoscience &Nanotechnology-Asia 9, no. 1 (December 26, 2018): 85–91. http://dx.doi.org/10.2174/2210681207666170612081017.

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Introduction: Here we propose an accurate drain current model for a Symmetric Dual Gate Tunnel FET (SDG-TFET) using effective tunneling length and generation rate of carrier over tunneling junction area. Analytical Modeling: The surface potential of the model is obtained by solving 2-dimensional Poisson’s equation and further extends to determine the magnitude of initial tunneling length and final tunneling length. The different DC performance indicators like drain current (ID), threshold voltage (Vth), transconductance (gm) and Subthreshold Slope (SS) for the present model are extensively investigated and the results are compared with that of Single Gate Tunnel FET (SGTFET). Conclusion: The practical importance of this model relies on its accuracy and improved electrostatic performance over SG-TFET. The analytical model results are validated using TCAD Sentaurus (Synopsys) device simulator.
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Boufouss, E., J. Alvarado, and D. Flandre. "Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000077–82. http://dx.doi.org/10.4071/hitec-eboufouss-ta25.

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A temperature dependence analysis of the single event transient current induced by heavy ions irradiation is performed in the range of 300K to 500K on a 1μm SOI CMOS MOSFET standard 6T-SRAM cell. The Sentaurus TCAD mixed-mode numerical simulation showed a significant impact of the temperature on the current induced by the radiation and as a result, an increase of the 6T-SRAM sensitivity upon radiation. A SOI MOSFET compact model introduced in SPICE as a Verilog-A module reproducing the single event effects was developed. This model shows a very good agreement with the TCAD simulations results but with a drastic reduction of the simulation time. Furthermore this model could be extended to other circuits simulations. This result is of importance to allow for extensive circuit design studies which cannot be carried out with TCAD physical simulations.
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Mishra, Sikha, Urmila Bhanja, and Guru Prasad Mishra. "An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET." Nanoscience & Nanotechnology-Asia 9, no. 4 (November 25, 2019): 504–11. http://dx.doi.org/10.2174/2210681208666180820151121.

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Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.
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Dissertations / Theses on the topic "Sentaurus Modeling"

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Ayyagari, Sai Rama Usha. "Modeling and Electrical Characterization of Ohmic Contacts on n-type GaN." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/82483.

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As the current requirements of power devices are moving towards high frequency, high efficiency and high-power density, Silicon-based devices are reaching its limits which are instigating the need to move towards new materials. Gallium Nitride (GaN) has the potential to meet the growing demands due to the wide band-gap nature which leads to various enhanced material properties like, higher operational temperature, smaller dimensions, faster operation and efficient performance. The metal contacts on semiconductors are essential as the interface properties affect the semiconductor performance and device operation. The low resistance ohmic contacts for n-GaN have been well established while most p-GaN devices have still high contact resistivity. Significant work has not been found that focuses on software-based modeling of the device to analyze the contact resistance and implement methods to reduce the contact resistivity. Understanding the interface physics in n-GaN devices using simulations can help in understanding the contacts on p-GaN and eventually reduce its metal contact resistivity. In this work, modeling of the metal-semiconductor interface along with the effect of a heavily doped layer under the metal contact is presented. The extent of reduction in contact resistivity due to different doping and thickness of n++ layer is presented with simulations. These results have been verified by the growth of device based on simulation results and reduction in contact resistivity has been observed. The effect of different TLM pattern along with different annealing conditions is presented in the work.
Master of Science
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Renshaw, John. "Numerical modeling and fabrication of high efficiency crystalline silicon solar cells." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/49068.

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Crystalline silicon solar cells translate energy from the sun into electrical energy via the photoelectric effect. This technology has the potential to simultaneously reduce carbon emissions and our dependence on fossil fuels. The cost of photovoltaic energy, however, is still higher than the cost of electricity off of the grid which hampers this technologies adoption. Raising solar cell efficiency without significantly raising the cost is crucial to lowering the cost of photovoltaic produced energy. One technology which holds promise to increase solar cell efficiency is a selective emitter solar cell. In this work the benefit of selective emitter solar cells is quantified through numerical modeling. Further, the use of ultraviolet laser to create a laser doped selective emitter solar cell is explored. Through optimization of the laser doping process to minimize laser induced defects it is shown that this process can increase solar cell efficiency to over 19.1%. Additionally, 2D and 3D numerical modeling are performed to determine the limitations screen printed interdigitated back contact solar cells and the practical efficiency limit for crystalline Si solar cells.
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Baccar, El Boubkari Fedia. "Évaluation des mécanismes de défaillance et de la fiabilité d’une nouvelle terminaison haute tension : approche expérimentale et modélisation associée." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0266/document.

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Ces travaux s’intègrent dans le projet de recherche SUPERSWITCH dans lequel des solutions alternatives à l’IGBT, utilisées dans les convertisseurs de puissance dans la gamme des tenues en tension 600-1200 V, sont envisagées. Les nouvelles structures du transistor MOS basées sur le principe de Super-Jonction tel que le transistor DT-SJMOSFET et sa terminaison originale, la « Deep Trench Termination » se propose comme alternative aux IGBT. Dans ce contexte, cette thèse se focalise sur la caractérisation de la robustesse de la terminaison DT2 adapté à une diode plane. Après avoir effectué un état de l’art sur les composants de puissances à semi-conducteur unidirectionnels en tension, les terminaisons des composants de puissance et la fiabilité des modules de puissance, un véhicule de test a été conçu en vue de réaliser les différents essais de vieillissement accéléré et suivi électrique. La fiabilité de la terminaison DT2 a été évaluée par des essais expérimentaux et des simulations numériques, dont une méthodologie innovante a été proposée. Au final de nouvelles structures ont été proposées pour limiter les problèmes de délaminage et de charges aux interfaces mis en avant dans notre étude
This work is a part of the research project SUPERSWITCH in which alternatives solutions to the IGBT, are investigated. This solution was used IGBT in power converters in the 600-1200 V breakdown voltage range. The new MOSFET structures based on the super-junction, such as the DT-SJMOSFET and its "Deep Trench Termination", is proposed as an alternative to IGBT. In this context, this thesis focuses on the robustness characterization of the DT2 termination adapted to a planar diode. After a state of the art on unidirectional voltage power components, the power components termination, and power modules reliability, a test vehicle has been designed in order to carry out different accelerated ageing tests and electrical monitoring. The reliability of DT2 termination was evaluated by experimental tests and numerical simulations. An innovative modeling methodology has been proposed. Finally, new structures have been proposed to limit the delamination failure mechanisms and interface charges problems highlighted in this thesis
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El, Boubkari Kamal. "Impact de la modélisation physique bidimensionnelle multicellulaire du composant semi-conducteur de puissance sur l'évaluation de la fiabilité des assemblages appliqués au véhicule propre." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-00856596.

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A bord des véhicules électriques (VE) et Hybrides (VEH), les fonctions de tractions sont assurées par des convertisseurs électroniques de puissances. Ces derniers sont constitués de module de puissance (IGBTs ou MOSFETs). Au cours de leur fonctionnement, ces modules sont parfois soumis à de fortes contraintes électriques et thermiques qui amènent à une défaillance ou même à une destruction. Le premier objectif sera de réaliser un banc expérimentale permettant d'étudier le vieillissement des modules IGBTs en régîmes extrêmes de fonctionnement (mode de court-circuit). Ainsi, nous évaluerons les différents indicateurs de vieillissements permettant de prédire la défaillance du composant. Il sera question aussi de suivre le vieillissement ou une dégradation initié sur les composants IGBTs par thermographie infrarouge. Le second objectif sera de modéliser et simuler par éléments finis différentes structures d'IGBTs, afin de valider les modèles en fonctionnement statique et dynamique. L'avantage de l'approche multicellulaire par rapport à l'approche unicellulaire sera mis en avant.
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Conference papers on the topic "Sentaurus Modeling"

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Saburova, Vladislava I., Gennady N. Kamaev, Aleksey S. Cherkaev, and Victor A. Gridchin. "Modeling of the Temperature Dependence of Polycrystalline-Si Conductivity in TCAD Sentaurus Environment." In 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE). IEEE, 2018. http://dx.doi.org/10.1109/apeie.2018.8545585.

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Kashirskaya, Oxana N. "Sentaurus TCAD for modeling of the elements of the matrix photodetectors on organic compounds." In 2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2015. http://dx.doi.org/10.1109/edm.2015.7184482.

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Krasukov, Anton Y., and Anton N. Mansurov. "Modeling of tot al dose radiation effect of RF PD SOI-MOSFET using Sentaurus TCAD." In 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2009. http://dx.doi.org/10.1109/edm.2009.5173951.

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Kotecha, Ramchandra M., Andriy Zakutayev, Wyatt K. Metzger, Paul Paret, Gilberto Moreno, Bidzina Kekelia, Kevin Bennion, et al. "Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6453.

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Abstract Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device’s behavior and its static and dynamic characteristics. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.
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Ануфриев, Владимир, Vladimir Anufriev, Антон Козлов, and Anton Kozlov. "INVESTIGATION OF THE INTEGRAL MAGNETO SENSITIVITY HALL SENSOR WITH PN JUNCTIONS BY THE SENTAURUS TCAD NUMERICAL MODELING." In CAD/EDA/Simulation in Modern Electronics. Bryansk State Technical University, 2018. http://dx.doi.org/10.30987/conferencearticle_5c19e5de650781.53271413.

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Perov, G. V., A. V. Glukhov, A. A. Alekseev, and V. I. Sedinin. "Metrological procurement for modeling conductivity of ultra thin dielectrics with non-uniform boundary by means of TCAD SENTAURUS." In 2012 IEEE 11th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE). IEEE, 2012. http://dx.doi.org/10.1109/apeie.2012.6628969.

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