Relevant bibliographies by topics / Sesquioxides

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Academic literature on the topic 'Sesquioxides'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "Sesquioxides"

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Uzoho, Bethel, Nnaemeka Okoli, and Ugochi Ekwugha. "Impact of Texture on Sesquioxide Distribution in Southeastern Nigerian Soils." International Journal of Environment 8, no. 1 (March 16, 2019): 43–58. http://dx.doi.org/10.3126/ije.v8i1.23148.

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Sesquioxides which play significant roles in soil classification and dominant soil properties vary in soils with particle size fractions. Using randomized complete block design, this study was conducted in the month of June 2018 to evaluate the impact of texture on sesquioxide distribution in humid rainforest soils of Southeastern Nigeria. Four mini-pedons were dug at four landscape positions (upslope, midslope, downslope and flat surface) and triplicate soil samples taken from 0-20, 20-40 and 40-60 cm depths, summing to total of 36 samples. Crystalline and amorphous Al, Fe, Mn and Si oxides were then determined at a depth of 0-20 cm using Dithionate Citrate Bicarbonate (DCB) and ammonium oxalate reagents. Dithionate and oxalate fractions in bulk soil ranged between 9300-11,400 (Fed), 390-1580 (Feox), 4600-6700 (Ald), 660-890 (Alox), 3300-5600 (Mnd), 350-580 (Mnox) and 9600-13,500 (Sid) and 1690-1790 mg kg-1 (Siox), with dithionate superior indicating high crystallinity and low mobility of the sesquioxides. Ratios of bulk soil oxalate/dithionate fractions were low and ranged between 0.04-0.17 (Feox/Fed), 0.11-0.15 (Alox/Ald), 0.10-0.16(Mnox/Mnd) and 0.13-0.18 (Siox/Sid) and confirming their crystallinity. Low Feox/Fed ratios signified that soils were well drained (< 0.35), old (< 0.65) and highly weathered (< 0.50) with the order being a decreasing sequence of upslope > flat surface > down slope > midslope. Sesquioxide contents and reactivity in soil particle size fractions (sand, silt and clay) varied with landscapes. Regression models indicated that particle size fractions accounted for 50% of 2/3rd of the bulk soil sesquioxide concentrations and that averaged over landscapes, sand fraction was more enriched with various sesquioxides than the other soil particle size fractions. Correlations between most bulk soil sesquioxide fractions and sesquioxide fractions with selected soil properties (sand, silt, clay, moisture content, total porosity, organic matter, pH, Ca and ECEC) were significant (P < 0.05).
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Rentería, M., A. G. Bibiloni, F. G. Requejo, A. F. Pasquevich, J. Shitu, L. A. Errico, and K. Freitag. "Impurity Cationic-Site Population and Electric-Field Gradient Dependence on Ionic Size in Bixbyites Sesquioxides Implanted With 181Hf → 181Ta." Modern Physics Letters B 12, no. 20 (August 30, 1998): 819–27. http://dx.doi.org/10.1142/s0217984998000949.

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The Perturbed-Angular-Correlation technique was used to study the impurity cationic-site population and electric-field gradients in scandium and samarium sesquioxides implanted with 181 Hf → 181 Ta . We found a departure of the tantalum (hafnium) relative occupancy of the crystallographic sites C and D in the bixbyite structure from the natural abundance of the sites, in the case of scandium sesquioxide, that could be explained in terms of the small lattice parameter of this sesquioxide. A similar behavior occurs in the case of indium sesquioxide. In the rest of the bixbyites measured with 181 Ta , f D /f C remains nearly constant and close to the crystallographic abundance, which is only reached in the case of Sm 2 O 3, the sesquioxide with the largest lattice parameter. Additionally, we confirm a jump in the values of νQ( Ta ) for sites C and D that takes place for a ≤ 1:012 nm, that is for lattice parameters smaller than that of ytterbium sesquioxide.
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Petermann, K., G. Huber, L. Fornasiero, S. Kuch, E. Mix, V. Peters, and S. A. Basun. "Rare-earth-doped sesquioxides." Journal of Luminescence 87-89 (May 2000): 973–75. http://dx.doi.org/10.1016/s0022-2313(99)00497-4.

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Zhang, Chun Li, Tai Hua Li, Shuang Huan Niu, Rong Fu Wang, Zhan Li Fu, Feng Qin Guo, and Ming Yang. "Synthesis and Evaluation of Novel Organogermanium Sesquioxides As Antitumor Agents." Bioinorganic Chemistry and Applications 2009 (2009): 1–8. http://dx.doi.org/10.1155/2009/908625.

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Five new organogermanium sesquioxides have been synthesized and characterized by elemental analysis and IR spectra. All the compounds were tested for antitumor activities against KB, HCT, and Bel cells in vitro. Compound 5 (-thiocarbamido propyl germanium sesquioxide) showed excellent antitumor activity, and its inhibition yield to KB, HCT, and Bel cells was 92.9%, 84.9%, and 70.9%, respectively. A rapid method was described for the labeling compound 5 with , and the optimum labeling conditions were investigated. The labeling yield is above 90% in pH 7.0, , reaction time greater than 10 minutes, 1 mg of compound 5, and 0.0750.1 mg of . The biodistribution of labeled compound 5 in nude mice bearing human colonic xenografts was studied. The result showed that the tumor uptakes were 0.73, 0.97, 0.87, and 0.62 ID%/g at 1-hour, 3-hour, 6-hour, and 20-hour postinjection, respectively. T/NT (the uptake ratio for per gram of tumor over normal tissues) was 18.3 for tumor versus brain and 5.81 for tumor versus muscle at 20-hour postinjection. The tumor clearance was slow. The results showed that compound 5 may be developed to be a suitable cancer therapeutic agent.
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ZINKEVICH, M. "Thermodynamics of rare earth sesquioxides." Progress in Materials Science 52, no. 4 (May 2007): 597–647. http://dx.doi.org/10.1016/j.pmatsci.2006.09.002.

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Bernal, S., F. J. Botana, J. J. Calvino, G. Cifredo, R. García, S. Molina, and J. M. Rodríguez-Izquierdo. "HREM characterization of lanthana-supported rhodium catalysts." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 246–47. http://dx.doi.org/10.1017/s0424820100174369.

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Metals supported on rare earth sesquioxides present a non- conventional behavior. Ordinary H2 and-or CO chemisorption techniques cannot be straightforwardly used to characterize this group of catalysts. The assessement to the data of metallic dispersions and the establishment of the occurrence and extent of metal-support interaction phenomena are determinant in order to interpret the properties of these catalysts in hydrogenation reactions. In this work HREM is proposed as a powerfull technique for the study of lanthana supported rhodium catalysts. Such catalysts would be considered as representative of a series of metals supported on rare earth sesquioxides.
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Manjón, Francisco, Juan Sans, Jordi Ibáñez, and André Pereira. "Pressure-Induced Phase Transitions in Sesquioxides." Crystals 9, no. 12 (November 28, 2019): 630. http://dx.doi.org/10.3390/cryst9120630.

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Pressure is an important thermodynamic parameter, allowing the increase of matter density by reducing interatomic distances that result in a change of interatomic interactions. In this context, the long range in which pressure can be changed (over six orders of magnitude with respect to room pressure) may induce structural changes at a much larger extent than those found by changing temperature or chemical composition. In this article, we review the pressure-induced phase transitions of most sesquioxides, i.e., A2O3 compounds. Sesquioxides constitute a big subfamily of ABO3 compounds, due to their large diversity of chemical compositions. They are very important for Earth and Materials Sciences, thanks to their presence in our planet’s crust and mantle, and their wide variety of technological applications. Recent discoveries, hot spots, controversial questions, and future directions of research are highlighted.
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Lupei, A., and V. Lupei. "RE3+ pairs in garnets and sesquioxides." Optical Materials 24, no. 1-2 (October 2003): 181–89. http://dx.doi.org/10.1016/s0925-3467(03)00123-x.

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Granier, Bernard, and Serge Heurtault. "Density of Liquid Rare-Earth Sesquioxides." Journal of the American Ceramic Society 71, no. 11 (November 1988): C466—C468. http://dx.doi.org/10.1111/j.1151-2916.1988.tb07551.x.

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Malet, P., M. J. Capitan, M. A. Centeno, J. A. Odriozola, and I. Carrizosa. "EXAFS data analysis for lanthanide sesquioxides." Journal of the Chemical Society, Faraday Transactions 90, no. 18 (1994): 2783. http://dx.doi.org/10.1039/ft9949002783.

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Dissertations / Theses on the topic "Sesquioxides"

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Rodríguez, Olga. "Influence of the sesquioxides on K release from Colombian soils." Thesis, University of Reading, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394456.

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Biswas, Koushik. "Liquid phase sintering of SiC ceramics with rare earth sesquioxides." [S.l. : s.n.], 2002. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10361095.

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Okur, Havva Esma. "Experimental investigations of correlated electron systems : alkali fullerides and sesquioxides." Thesis, Durham University, 2016. http://etheses.dur.ac.uk/11644/.

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The work reported in this thesis systematically investigates the structural, electronic and/or magnetic properties of fcc AxCs3-xC60 fullerides (A = K and Rb) and of sesquioxide Cs4O6 under ambient and non-ambient temperature and pressure conditions, employing X-ray and neutron powder diffraction, muon spin relaxation, and SQUID magnetometry. In the AxCs3-xC60 alkali fullerides, unconventional superconductivity can emerge through tuning of intermolecular distances. While conventional BCS-like response is found in the underexpanded regime of the electronic phase diagram, significant deviations appear in the overexpanded region adjacent to the Mott boundary where strong electron correlations are prominent. In this work, the solid-state synthesis of fcc KxCs3−xC60 (0.12 ≤ x ≤ 2) superconducting materials, with intermolecular distances controlled via adjusting the K+/Cs+ dopant ratio, is reported. Whilst the structural, electronic and magnetic properties of fcc KxCs3−xC60 are reminiscent of those previously reported for fcc RbxCs3−xC60, i.e. the Mott boundary can be shifted to ambient pressure and the metal-insulator crossover temperature can be tuned by such chemical pressurisation of Cs3C60, cation-specific effects are of importance on the electronic properties of fcc AxCs3−xC60. This work also provides strong evidence for correlated behaviour in the overexpanded regime through examining the presence or not of the Hebel-Slichter coherence peak and extracting the superconducting gap magnitude. Crystallographically, the alkali sesquioxides A4O6 (A = Rb, Cs), at high and low temperature, had been reported to adopt a cubic structure which generates a single crystallographic position for dioxygen, implying charge disorder: A4(O2(4/3)-)3. Conversely, spectroscopy studies at 5 K found evidence for two localized valence states of dioxygen, indicating charge ordering: (A+)4(O2−)2(O22−). This issue is addressed with the first systematic investigation of the temperature- and cooling-protocol-dependent structural evolution of Cs4O6, revealing the existence of a valence-ordered state at low temperature and also that valence disorder-order transitions can be induced by temperature, pressure and X-ray illumination.
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Koopmann, Philipp [Verfasser]. "Thulium- and Holmium-Doped Sesquioxides for 2 µm Lasers / Philipp Koopmann." Aachen : Shaker, 2012. http://d-nb.info/1066197563/34.

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Schewski, Robert. "Transmission electron microscopic investigation of the growth of group III sesquioxides Ga2O3." Doctoral thesis, Humboldt-Universität zu Berlin, 2019. http://dx.doi.org/10.18452/19789.

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In dieser Arbeit werden die grundlegenden Wachstumsprozesse von Ga2O3 , mittels Transmissionselektronenmikroskopie analysiert. Dazu gehört die Untersuchung des heteroepitaktischen Wachstums von Galliumoxidschichten welche mittels Molekularstrahlepitaxie (molekular beam epitaxy MBE), der gepulsten Laser Abscheidung (pulsed laser deposition (PLD)) und der metallorganischen Gasphasenepitaxie (metalorganic vapor phase epitaxy (MOVPE)) auf (0001) orientierte Saphir Substraten abgeschieden wurden. Heteroepitaktisches Wachstum von Ga2O3 auf Saphir (0001) erfolgt bis zu einer Dicke von 3 Monolagen pseudomorph als α-Ga2O3 welches durch die Gitterfehlpassung zwischen Galliumoxid und dem Saphire Substrat induzierte Gitterverspannung stabilisiert wir. Weiterhin, im Fokus der Arbeit stehend, wird das homoepitaktische Wachstum von Galliumoxid auf (100) orientierten Galliumoxidsubstraten untersucht. Neben den Besonderheiten des Schichtwachstums, die sich aus den eingesetzten metallorganischen Präkursoren und Sauerstoffquellen ergeben, wird die Schichtstruktur in Abhängigkeit der typischen Wachstumsparameter (Wachstumstemperatur, Wachstumsrate, Kammerdruck und Fehlorientierung des Substrates) analysiert. Dabei wird gezeigt das homoepitaktischen Wachstum auf (100) orientiertem, β-Ga2O3, mittels MOVPE, die kristalline Perfektion der gewachsenen Schichten stark von den verwendeten Präkursoren (Trimethylgallium (TMGa) und Triethylgallium (TEGa) als metallorganische Ausgangsstoffe und H2 O oder purer Sauerstoff als Oxidant) und den chemischen Prozessen an der Oberfläche bestimmt wird. Des Weiteren wird die Entstehung von Zwillingslammelen in abhähngigkeit der Fehlorientierung untersucht. Durch die Einführung von vorbestimmten Fehlorientierungswinkeln der Substrate ist es möglich das Entstehen der Zwillingslamellen zu verhindern, und ein Stufenflusswachstum zu generieren. Durch die Anwendung eines Ratengleichungsansatzes ist es möglich die experimentell beobachteten Dichten an Zwillingslamellen zu erklären und einen Diffusionskoeffizienten zu bestimmen. (i) Heteroepitaktisches Wachstum von Ga2O3 auf Saphir (0001) erfolgt bis zu einer Dicke von 3 Monolagen pseudomorph als alpha-Ga2O3. Oberhalb dieser Schicht wächst relaxiertes ß-Ga2O3 in Form von 3 Rotationsdomänen auf. Die Stabilisation der dünnen alpha-Ga2O3 Schicht wird, durch die Gitterfehlpassung zwischen Galliumoxid und dem Saphire Substrat induzierte Gitterverspannung bewirkt. (ii) Beim homoepitaktischen Wachstum auf (100) orientiertem ß-Ga2O3 mittels MOVPE wird die kristalline Perfektion der gewachsenen Schichten stark von den verwendeten Präkursoren (Trimethylgallium (TMGa) und Triethylgallium (TEGa) als metallorganische Ausgangsstoffe und H2O oder purer Sauerstoff als Oxidant) und den chemischen Prozessen an der Oberfläche bestimmt. Während beim Wachstum mittels TMGa und O2 vorwiegend polykristalline Schichten entstehen, ergeben sich beim Wachstum mittels TMGa und H2O sowie TEGa und O2 geschlossenen epitaktische Schichten. Dieser signifikante Unterschiede lässt sich durch die unterschiedlichen Reaktionswege der Ausgangsstoffe sowie durch die katalytische Wirkung der (100) Flächen des ß-Ga2O3 erklären. (iii) Die Perfektion, mittels MOVPE gewachsener, homoepitaktischer Schichten, auf (100) orientierten Substraten, ist stark von der Fehlorientierung des Substrates bestimmt. Schichten die auf Substraten mit geringen Fehlorientierungen abgeschieden werden (< 2° bei Wachstumstemperaturen < 850°C) sind durch eine hohe Dichte an Zwillingslamellen gekennzeichnet. Die Entstehung der Zwillingslamellen ist ein Resultat eines Doppelpositionierungsprozesses der Atome auf der Oberfläche der Wachstumsebene. Durch die Einführung von vorbestimmten Fehlorientierungswinkeln der Substrate ist es möglich das Entstehen der Zwillingslamellen zu verhindern, und ein Stufenflusswachstum zu generieren. Durch die Anwendung eines Ratengleichungsansatzes, welcher die konkurrierenden Prozesse des Einbaus von Atomen in Oberflächenstufen sowie der Nukleation und des Wachstum von zweidimensionalen Inseln beschreibt, ist es möglich die experimentell beobachteten Dichten an Zwillingslamellen zu erklären und einen Diffusionskoeffizienten zu bestimmen, Dieser ist um zwei Größenordnungen geringer als bei klassischen Halbleitern, wie z. B. GaAs. In dieser Arbeit werden die grundlegenden Wachstumsprozesse von Ga2O3 , mittels Transmissionselektronenmikroskopie analysiert. Dazu gehört die Untersuchung des heteroepitaktischen Wachstums von Galliumoxidschichten welche mittels Molekularstrahlepitaxie (molekular beam epitaxy MBE), der gepulsten Laser Abscheidung (pulsed laser deposition (PLD)) und der metallorganischen Gasphasenepitaxie (metalorganic vapor phase epitaxy (MOVPE)) auf (0001) orientierte Saphir Substraten abgeschieden wurden. Heteroepitaktisches Wachstum von Ga2O3 auf Saphir (0001) erfolgt bis zu einer Dicke von 3 Monolagen pseudomorph als α-Ga2O3 welches durch die Gitterfehlpassung zwischen Galliumoxid und dem Saphire Substrat induzierte Gitterverspannung stabilisiert wir. Weiterhin, im Fokus der Arbeit stehend, wird das homoepitaktische Wachstum von Galliumoxid auf (100) orientierten Galliumoxidsubstraten untersucht. Neben den Besonderheiten des Schichtwachstums, die sich aus den eingesetzten metallorganischen Präkursoren und Sauerstoffquellen ergeben, wird die Schichtstruktur in Abhängigkeit der typischen Wachstumsparameter (Wachstumstemperatur, Wachstumsrate, Kammerdruck und Fehlorientierung des Substrates) analysiert. Dabei wird gezeigt das homoepitaktischen Wachstum auf (100) orientiertem, β-Ga2O3, mittels MOVPE, die kristalline Perfektion der gewachsenen Schichten stark von den verwendeten Präkursoren (Trimethylgallium (TMGa) und Triethylgallium (TEGa) als metallorganische Ausgangsstoffe und H2 O oder purer Sauerstoff als Oxidant) und den chemischen Prozessen an der Oberfläche bestimmt wird. Des Weiteren wird die Entstehung von Zwillingslammelen in abhähngigkeit der Fehlorientierung untersucht. Durch die Einführung von vorbestimmten Fehlorientierungswinkeln der Substrate ist es möglich das Entstehen der Zwillingslamellen zu verhindern, und ein Stufenflusswachstum zu generieren. Durch die Anwendung eines Ratengleichungsansatzes ist es möglich die experimentell beobachteten Dichten an Zwillingslamellen zu erklären und einen Diffusionskoeffizienten zu bestimmen. Des Weiteren wird das Wachstum im Mischsystem (InxGa1-x)2O3 untersucht und gezeigt das Indium als grenzflächenaktive Substanz wirken kann.
In this work we study the basic growth processes of epitaxial Ga2O3 films, by means of transmission electron microscopy. We investigate the heteroepitaxial growth of thin layers Ga2O3 on the (0001) plane of sapphire grown by molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and metal organic vapor phase epitaxy (MOVPE). Furthermore, we will focus on the homoepitaxial growth on the (100) plane by MOVPE. Beside the peculiarities of the layer growth dependence on different metal organic precursors and oxygen sources, we investigate the influence of typical growth parameters (i.e. growth temperature, growth-rate, chamber pressure and miscut angle of the substrate) on the layer morphology. Incase of heteroepitaxial growth of β-Ga2O3 on (0001) plane of sapphire, independent of the growth method, the formation of a 3 monolayer thick α-Ga2O3 layer is observed, which is stabilized through strain, as a result of the lattice mismatch between sapphire and α-Ga2O3. In case of homoepitaxial growth by MOVPE on (100) oriented β-Ga2O3, the crystalline quality of the grown layer strongly depends on the used precursor (tri-methyl-gallium (TMGa) or tri-ethyl-gallium (TEGa) as metal precursor and H2O or pure oxygen as oxidant) and the chemical processes on the surface, respectively. Further on is the crystalline perfection of homoepitaxial layers grown by MOVPE on (100) oriented β-Ga2O3 substrates strongly dependent on the miscut-angle of the substrates. Layer grown on substrate with a small miscut-angle (< 2°) show high amount of twin lamella. These twin lamella are a result of a possible double positioning mechanism of ad-atoms on the growth surface. By introducing appropriate miscut-angles of the substrate it is possible to suppress the formation of these twin lamellae, and enable step flow growth. By applying a rate equation approach, describing the competing processes of incorporation of ad-atoms at kink sites or nucleation and growth of two dimensional island, it is possible to quantitatively reproduce the experimentally observed twin lamella densities and to determine a surface diffusion coefficient of the ad-atoms. Furthermore, in case of the alloy system (InxGa1-x)2O3, it is shown that indium can act as an surfactant, by increasing the surface diffusion.
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Heuer, Alexander Marc [Verfasser]. "Rare-Earth-Doped Sesquioxides for Lasers in the Mid-Infrared Spectral Range / Alexander Marc Heuer." Aachen : Shaker, 2018. http://d-nb.info/118658999X/34.

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Schewski, Robert [Verfasser], Henning [Gutachter] Riechert, Ted [Gutachter] Masselink, and Michael [Gutachter] Kneissl. "Transmission electron microscopic investigation of the growth of group III sesquioxides Ga2O3 / Robert Schewski ; Gutachter: Henning Riechert, Ted Masselink, Michael Kneissl." Berlin : Humboldt-Universität zu Berlin, 2019. http://d-nb.info/1182996752/34.

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Klopp, Peter. "New Yb 3+ -doped laser materials and their application in continuous-wave and mode-locked lasers." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15548.

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Yb3+-Lasermedien glänzen mit hoher Effizienz und relativ geringer thermischer Last, besonders in Laseroszillatoren und -verstärkern mittlerer bis hoher Leistung. Modenkopplung von Yb3+-Lasersystemen ermöglicht Subpikosekunden-Pulse bei hoher mittlerer Ausgangsleistung. Diese Arbeit widmet sich zwei Gruppen der vielversprechendsten neuen Yb3+-aktivierten Laserkristalle: den strukturell analogen, monoklinen Doppelwolframaten Yb:KGd(WO4)2 (Yb:KGW), Yb:KY(WO4)2 (Yb:KYW) und KYb(WO4)2 (KYbW) und den Yb3+-dotierten Sesquioxiden, vertreten durch Yb:Sc2O3 (Yb:Skandia). Die spektroskopischen Daten von KYbW, darunter eine extrem kurze 1/e-Absorptionslänge von 13 Mikrometern bei 981 nm, wurden im Rahmen der Dissertation vermessen. Die Lasereigenschaften niedrig Yb3+-dotierter Wolframate im Dauerstrich (cw)- und modengekoppelten Betrieb wurden in Lasern moderater Ausgangsleistung untersucht. Ultrakurzpuls-Erzeugung mit Yb:KYW, Yb:KGW und Yb:Glas wurde in einem passiv modengekoppelten Laser verglichen. Dabei wurde eine relativ hohe Lasereffizienz erreicht, Dank einer Trapezlaserdiode als Pumpquelle mit exzellenter Strahlqualität. Quasi-cw- und cw-Laserbetrieb von Yb3+ in hochdotierten und stöchiometrischen Wolframatkristallen wurden untersucht. Diese Materialien sind interessant für Mikrochip- und Scheibenlaser. Wichtige Fragestellungen waren die Kristallqualität und die Hitzeentwicklung bei hohen Yb3+-Konzentrationen. Erstmals wurde Lasertätigkeit von Wolframaten mit Yb3+-Konzentrationen >>20% und schließlich, mit KYbW, cw-Laserbetrieb eines stöchiometrischen Yb-Lasermaterials demonstriert. Weiterhin wurde mit KYbW der kleinste bisher für einen Laserkristall gemessene Laserquantendefekt erzielt, 1,6%. Unter Benutzung eines Yb:Sc2O3-Lasermediums wurde erstmals modengekoppelter Betrieb eines Oszillators mit Sequioxid-Laserkristall gezeigt. Betrieb mit nichtsolitonen- und solitonenartiger Pulsformung sowie mit Ti:Saphir-Laser oder Trapezlaserdiode als Pumplaser wurden untersucht. Mit einem Ti:Saphir-gepumpten Yb:Skandia-Laser wurde eine Konversionseffizienz von 47 % bezogen auf die absorbierte Pumpleistung erreicht, der bisher höchste Wert für einen modengekoppelten Yb3+-basierten Laser.
Yb3+ laser media excel with high efficiency and relatively low heat load, especially in medium to high power laser oscillators and amplifiers. Mode-locking of Yb3+ laser systems can provide subpicosecond pulse durations at high average power. This work deals with two groups of the most promising novel Yb3+-activated laser crystals: Yb3+-activated monoclinic double tungstates, namely the isostructural crystals Yb:KGd(WO4)2 (Yb:KGW), Yb:KY(WO4)2 (Yb:KYW), and KYb(WO4)2 (KYbW), and Yb3+-doped sesquioxides, represented by Yb:Sc2O3 (Yb:scandia). Spectroscopic data of KYbW were investigated as part of this thesis, finding an extremely short 1/e-absorption length of 13 micrometers at 981 nm. Continuous-wave (cw) and mode-locked laser performance of moderate-average-power lasers based on lowly Yb3+-doped tungstates were examined. Ultrashort pulse generation with Yb:KYW, Yb:KGW, and Yb:glass was compared in a passively mode-locked laser. A relatively high mode-locked laser efficiency was achieved due to a tapered diode pump laser with excellent beam quality. Quasi-cw and cw lasing of Yb3+ in highly doped and stoichiometric tungstate crystals were investigated. These materials are interesting for microchip and thin-disk lasers. Important issues were crystal quality and heat generation at high Yb3+ concentrations. For the first time, laser operation of tungstates with a Yb3+ concentration >>20% and finally, with KYbW, cw lasing of a stoichiometric Yb laser material was achieved. Furthermore, with KYbW, the smallest laser quantum defect ever for a laser crystal was demonstrated, 1.6%. Using a Yb:Sc2O3 laser medium, for the first time mode locking of an oscillator using a sesquioxide laser crystal was realized. Laser regimes with non-solitonlike and solitonlike pulse shaping were investigated, using a Ti:Sapphire laser and a tapered laser diode as pump sources. With a Ti:Sapphire-laser-pumped Yb:scandia laser the highest conversion efficiency with respect to absorbed pump power for any mode-locked Yb3+-based laser was achieved, 47%.
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Peters, Rigo. "Ytterbium-dotierte Sesquioxide als hocheffiziente Lasermaterialien." Aachen Shaker, 2009. http://d-nb.info/996984313/04.

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Webster, Scott Elliott. "Growth and structure of yttrium sesquioxide epitaxial films." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/41417.

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The use of molecular beam epitaxy as a method for producing solid state host crystals for planar waveguide lasers has been investigated. Single crystal yttrium sesquioxide with a very high degree of structural order has been grown on R-plane sapphire substrates. The (01Ῑ2) Al₂O₃ substrates were annealed in air at 1150°C to generate atomically smooth surfaces with parallel atomic steps. This process was important for maximizing structural quality and minimizing surface roughness of the grown Y₂O₃ film. A critical-thickness-like phenomenon was discovered, where the Y₂O₃ would grow in regions with near structural perfection at the beginning of growth. In thicker films, the x-ray diffraction peaks became wider, indicating less crystalline uniformity. The maximum equivalent “critical thickness” achieved was 7 nm for a film grown at 800°C with a growth rate of 20 nm/hr. The highly ordered material may be present in one uniform layer or distributed in smaller regions throughout the thin film. Y₂O₃ films on Al₂O₃ were annealed in air at temperatures up to 1400°C to study interdiffusion. By analyzing x-ray diffraction measurements, we found that Al migrated from the substrate into the Y₂O₃ film with an approximate activation energy for bulk diffusion of 3.0 eV. Diffusion on the Y₂O₃ surface was estimated to have an activation energy of (0.5 ± 0.3) eV from atomic force microscopy images. After annealing, the presence of Y₄Al₂O₉, YAlO₃, and Y₃Al₅O₁₂ phases was confirmed using x-ray diffraction and photoluminescence measurements. Attempts were made to use molecular hydrogen gas and gallium as surfactants during growth to improve film properties. No conclusive benefit was observed. Y₂O₃ film surface roughness was observed to increase roughly proportionally to the square root of film thickness. A 600 nm thick waveguide layer grown under optimal conditions had a root-mean-square roughness of 5.8 nm. This level of roughness could cause scattering loss at the waveguide core-cladding interface that is problematic for practical applications.
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Books on the topic "Sesquioxides"

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Carter, Sue A. Electron correlations, magnetism, and disorder in vanadium sesquioxide. 1993.

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Book chapters on the topic "Sesquioxides"

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Raasch, Maynard S. "Thiophene 1,1-Dioxides, Sesquioxides, and 1-Oxides." In Chemistry of Heterocyclic Compounds: A Series Of Monographs, 571–628. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2008. http://dx.doi.org/10.1002/9780470187234.ch7.

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Atou, T., K. Kusaba, Y. Syono, T. Kikegawa, and H. Iwasaki. "Pressure-Induced Phase Transition in Rare Earth Sesquioxides." In High-Pressure Research: Application to Earth and Planetary Sciences, 469–75. Washington, D. C.: American Geophysical Union, 2013. http://dx.doi.org/10.1029/gm067p0469.

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Peters, Rigo, Klaus Petermann, and Günter Huber. "Growth Technology and Laser Properties of Yb-Doped Sesquioxides." In Crystal Growth Technology, 267–82. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527632879.ch15.

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Courcot, E., F. Rebillat, and F. Teyssandier. "Thermochemical Stability of Rare Earth Sesquioxides Under a Moist Environment at High Temperature." In Ceramic Transactions Series, 257–64. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470909836.ch24.

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Gooch, Jan W. "Chromium Sesquioxide." In Encyclopedic Dictionary of Polymers, 144. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_2380.

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"Sesquioxides." In Encyclopedia of Soil Science, Third Edition, 2003–7. CRC Press, 2017. http://dx.doi.org/10.1081/e-ess3-120042750.

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Shaw, Joey, and Larry West. "Sesquioxides." In Encyclopedia of Soil Science, Second Edition. CRC Press, 2005. http://dx.doi.org/10.1201/noe0849338304.ch330.

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"Spodosols: Soils with Subsoil Accumulations of Humus and Sesquioxides." In Soil Genesis and Classification, 361–73. Oxford, UK: Wiley-Blackwell, 2011. http://dx.doi.org/10.1002/9780470960622.ch17.

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"Sesquioxide." In Encyclopedia of Soil Science, 623. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-3995-9_515.

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"Chromium sesquioxide." In Encyclopedic Dictionary of Polymers, 191. New York, NY: Springer New York, 2007. http://dx.doi.org/10.1007/978-0-387-30160-0_2336.

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Conference papers on the topic "Sesquioxides"

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Atou, T., M. Kikuchi, K. Fukuoka, and Y. Syona. "Shock-induced phase transition of scandium sesquioxide: Geometric factor governing high pressure transitions on rare earth sesquioxides." In High-pressure science and technology—1993. AIP, 1994. http://dx.doi.org/10.1063/1.46109.

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Lagatsky, A. A., P. Koopmann, O. L. Antipov, C. T. A. Brown, G. Huber, and W. Sibbett. "Femtosecond pulse generation with Tm-doped sesquioxides." In 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC. IEEE, 2013. http://dx.doi.org/10.1109/cleoe-iqec.2013.6800628.

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Cardinali, Vanessa, Emilie Marmois, Bruno Le Garrec, and Gilbert Bourdet. "Thermo-optical measurements of ytterbium doped sesquioxides ceramics." In SPIE Photonics Europe, edited by Thomas Graf, Jacob I. Mackenzie, Helena Jelinková, Gerhard G. Paulus, Vincent Bagnoud, and Catherine Le Blanc. SPIE, 2010. http://dx.doi.org/10.1117/12.853860.

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Peters, Rigo, Christian Krankel, Klaus Petermann, and Gunter Huber. "High power laser operation of sesquioxides Yb:Lu2O3 and Yb:Sc2O3." In 2008 Conference on Lasers and Electro-Optics (CLEO). IEEE, 2008. http://dx.doi.org/10.1109/cleo.2008.4551703.

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Prentice, Jake J., James A. Grant-Jacob, Stephen J. Beecher, David P. Shepherd, Robert W. Eason, and Jacob I. Mackenzie. "Ytterbium-doped mixed sesquioxides grown by pulsed laser deposition." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087222.

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Chandra Shekar, N. V., A. Arulraj, N. R. Sanjay Kumar, C. Ravi, M. Sekar, and P. Ch Sahu. "Strutural phase transitions in rare earth sesquioxides under pressure." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791537.

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Merkle, Larry D., and Nikolay Ter-Gabrielyan. "Er-doped sesquioxides for 1.5-micron lasers - spectroscopic comparisons." In SPIE Defense, Security, and Sensing, edited by Mark Dubinskii and Stephen G. Post. SPIE, 2013. http://dx.doi.org/10.1117/12.2017873.

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Peters, V., K. Petermann, G. Huber, M. Larionov, J. Speiser, and A. Giesen. "Growth of sesquioxides for high power thin-disk-laser applications." In Advanced Solid State Lasers. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/assl.2002.md3.

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Uvarova, A., C. Guguschev, and C. Krankel. "Growth and Characterization of High-Melting Sesquioxides for 3 μm Lasers." In 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2019. http://dx.doi.org/10.1109/cleoe-eqec.2019.8871444.

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Yang, Jun. "Applications of FT-IR emission spectroscopy for superconductor YBa2Cu3 Ox and rare earth sesquioxides." In International Conference on Optoelectronic Science and Engineering '90. SPIE, 1990. http://dx.doi.org/10.1117/12.2294828.

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Reports on the topic "Sesquioxides"

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Merkle, Larry D., and Nikolay Ter-Gabrielyan. Host-dependence of Trivalent Erbium (Er3+) Spectra Relevant to Solid-state Lasers: Yttrium Aluminum Garnet (YAG) and Sesquioxides. Fort Belvoir, VA: Defense Technical Information Center, September 2011. http://dx.doi.org/10.21236/ada553954.

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