Log in

Relevant bibliographies by topics / Shockley–Read–Hall recombination / Journal articles

To see the other types of publications on this topic, follow the link: Shockley–Read–Hall recombination.

Journal articles on the topic 'Shockley–Read–Hall recombination'

Author: Grafiati

Published: 7 June 2025

Last updated: 17 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Shockley–Read–Hall recombination.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Sakowski, Konrad, Pawel Strak, Pawel Kempisty, et al. "Coulomb Contribution to Shockley–Read–Hall Recombination." Materials 17, no. 18 (2024): 4581. http://dx.doi.org/10.3390/ma17184581.

Full text

Abstract:

A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley–Read–Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that, in a typical semiconductor device or semiconductor medium, the SRH recombination rate at low temperatures is much higher and cannot be neglected. This effect renders invalid the standard procedure of estimating the radiative recombination rate by measuring the light output in cryogenic temperatures, as a significant nonradiative recombination channel is still present. We also show that SRH is more effective in the case of low-doped semiconductors, as effective screening by mobile carrier density could reduce the effect.

APA, Harvard, Vancouver, ISO, and other styles

2

Webster, P. T., R. A. Carrasco, A. T. Newell, et al. "Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data." Journal of Applied Physics 133, no. 12 (2023): 125704. http://dx.doi.org/10.1063/5.0147482.

Full text

Abstract:

The semiconductor minority carrier lifetime contains information about several important material properties, including Shockley–Read–Hall defect levels/concentrations and radiative/Auger recombination rates, and the complex relationships between these parameters produce a non-trivial temperature-dependence of the measured lifetime. It is tempting to fit temperature-dependent lifetime data to extract the properties of the Shockley–Read–Hall recombination centers; however, without a priori knowledge of the distribution of the Shockley–Read–Hall states across the bandgap, this fit problem is under-constrained in most circumstances. Shockley–Read–Hall lifetime data are not well-suited for the extraction of Shockley–Read–Hall defect levels but can be used effectively to extract minority carrier recombination lifetimes. The minority carrier recombination lifetime is observed at temperatures below 100 K in a Si-doped n-type InGaAs/InAsSb superlattice, and deviation from its expected temperature-dependence indicates that the capture cross section of the defect associated with Si-doping has an activation energy of 1.5 meV or a characteristic temperature of 17 K. This lower temperature regime is also preferrable for the analysis of the physics of defect introduction with displacement-damage-generating particle irradiation.

APA, Harvard, Vancouver, ISO, and other styles

3

Ghannam, Moustafa Y., and Husain A. Kamal. "Modeling Surface Recombination at the p-TypeSi/SiO2Interface via Dangling Bond Amphoteric Centers." Advances in Condensed Matter Physics 2014 (2014): 1–9. http://dx.doi.org/10.1155/2014/857907.

Full text

Abstract:

An integral model is proposed for recombination at the silicon/silicon dioxide (Si/SiO2) interface of thermally oxidized p-type silicon viaPbamphoteric centers associated with surface dangling bonds. The proposed model is a surface adaptation of a model developed for bulk recombination in amorphous silicon based on Sah-Shockley statistics which is more appropriate for amphoteric center recombination than classical Shockley-Read-Hall statistics. It is found that the surface recombination via amphoteric centers having capture cross-sections larger for charged centers than for neutral centers is distinguished from Shockley-Read-Hall recombination by exhibiting two peaks rather than one peak when plotted versus surface potential. Expressions are derived for the surface potentials at which the peaks occur. Such a finding provides a firm and plausible interpretation for the double peak surface recombination current measured in gated diodes or gated transistors. Successful fitting is possible between the results of the model and reported experimental curves showing two peaks for surface recombination velocity versus surface potential. On the other hand, if charged and neutral center capture cross-sections are equal or close to equal, surface recombination via amphoteric centers follows the same trend as Shockley-Read-Hall recombination and both models lead to comparable surface recombination velocities.

APA, Harvard, Vancouver, ISO, and other styles

4

Knezevic-Miljanovic, Julka. "On a SHOCKLEY-READ-HALL model for semiconductors." Theoretical and Applied Mechanics 40, no. 1 (2013): 65–70. http://dx.doi.org/10.2298/tam1301065k.

Full text

Abstract:

The Shockley-Read-Hall model was introduced in 1952 to describe the statistics of recombination of holes and electrons in semiconductors occurring through the mechanism of trapping and we consider initial-boundary value problems with initial conditions.

APA, Harvard, Vancouver, ISO, and other styles

5

Ivchenko, E. L., V. K. Kalevich, A. Kunold, A. Balocchi, X. Marie, and T. Amand. "Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors." Semiconductors 53, no. 9 (2019): 1175–81. http://dx.doi.org/10.1134/s1063782619090070.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Zhao, Chao, Tien Khee Ng, Aditya Prabaswara, et al. "An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination." Nanoscale 7, no. 40 (2015): 16658–65. http://dx.doi.org/10.1039/c5nr03448e.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Schuster, J., R. E. DeWames, E. A. DeCuir, E. Bellotti, and P. S. Wijewarnasuriya. "Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression." Applied Physics Letters 107, no. 2 (2015): 023502. http://dx.doi.org/10.1063/1.4926603.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

GHANNAM, M. Y., R. P. MERTENS, S. C. JAIN, J. F. NIJS, and R. VAN OVERSTRAETEN. "BAND-TAIL SHOCKLEY-READ-HALL RECOMBINATION IN HEAVILY DOPED SILICON." Le Journal de Physique Colloques 49, no. C4 (1988): C4–275—C4–280. http://dx.doi.org/10.1051/jphyscol:1988457.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Martí, A., L. Cuadra, N. López, and A. Luque. "Intermediate band solar cells: Comparison with shockley-read-hall recombination." Semiconductors 38, no. 8 (2004): 946–49. http://dx.doi.org/10.1134/1.1787117.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Goudon, Thierry, Vera Miljanović, and Christian Schmeiser. "On the Shockley–Read–Hall Model: Generation-Recombination in Semiconductors." SIAM Journal on Applied Mathematics 67, no. 4 (2007): 1183–201. http://dx.doi.org/10.1137/060650751.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Borgwardt, M., P. Sippel, R. Eichberger, M. P. Semtsiv, W. T. Masselink, and K. Schwarzburg. "Excitation correlation photoluminescence in the presence of Shockley-Read-Hall recombination." Journal of Applied Physics 117, no. 21 (2015): 215702. http://dx.doi.org/10.1063/1.4921704.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Cockbill, Louisa. "Shockley-Read-Hall recombination affects electroluminescence efficiency in gallium nitride LEDs." Scilight 2017, no. 13 (2017): 130005. http://dx.doi.org/10.1063/1.5005524.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Wickramaratne, Darshana, Jimmy-Xuan Shen, Cyrus E. Dreyer, et al. "Iron as a source of efficient Shockley-Read-Hall recombination in GaN." Applied Physics Letters 109, no. 16 (2016): 162107. http://dx.doi.org/10.1063/1.4964831.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Gogolin, R., and N. P. Harder. "Trapping behavior of Shockley-Read-Hall recombination centers in silicon solar cells." Journal of Applied Physics 114, no. 6 (2013): 064504. http://dx.doi.org/10.1063/1.4817910.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Krishnamurthy, Srinivasan, and M. A. Berding. "Full-band-structure calculation of Shockley–Read–Hall recombination rates in InAs." Journal of Applied Physics 90, no. 2 (2001): 848–51. http://dx.doi.org/10.1063/1.1381051.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Sachenko, A. V., V. P. Kostylyov, R. M. Korkishko, et al. "Simulation and characterization of planar high-efficiency back contact silicon solar cells." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 3 (2021): 319–27. http://dx.doi.org/10.15407/spqeo24.03.319.

Full text

Abstract:

Short-circuit current, open-circuit voltage, and photoconversion efficiency of silicon high-efficiency solar cells with all back contact (BCSC) with planar surfaces have been calculated theoretically. In addition to the recombination channels usually considered in this kind of modeling, namely, radiative, Auger, Shockley–Read–Hall, and surface recombination, the model also takes into account the nonradiative trap-assisted exciton Auger recombination and recombination in the space charge region. It is ascertained that these two recombination mechanisms are essential in BCSCs in the maximum power operation regime. The model results are in good agreement with the experimental results from the literature.

APA, Harvard, Vancouver, ISO, and other styles

17

Dvoretsky S.A., Stupak M.F., Mikhailov N.N., et al. "New recombination centers in MBE MCT layers on (013) GaAs substrates." Physics of the Solid State 65, no. 1 (2023): 53. http://dx.doi.org/10.21883/pss.2023.01.54974.466.

Full text

Abstract:

A large inhomogeneity of the minority lifetime from 1 to 10 μs at 77 K over the area is observed in some experiments when high-quality HgCdTe layers of the electronic type of conductivity are grown on GaAs substrates with a diameter of 76.2 mm with the (013) orientation by the method of molecular beam epitaxy. As a rule, the such lifetimes are determined by carrier recombination at Shockley-Hall-Read (SHR) centers. Modern studies and ideas about the nature of the SHR centers do not allow us to explain the observed results. The measurements of HgCdTe layers by the second harmonic generation showed the existence of a quasi-periodic change in the signal at the minima of the azimuthal dependence, which is associated with the appearance of misoriented microregions of the crystal structure. The amplitude of the quasi-periodic change in the signal decreases with increasing lifetime and completely disappears for regions with higher lifetime values. Similar dependences are observed during etching of HgCdTe layers, which indicates the existence of misoriented microregions in the bulk. Thus, misoriented microregions of the crystal structure have a significant effect on the lifetime and are new centers of Shockley-Hall-Read recombination. Keywords: HgCdTe layers, lifetime, second harmonic, azimuthal angular dependences, recombination centers, misoriented microregions.

APA, Harvard, Vancouver, ISO, and other styles

18

Zhou, Renlin, Masao Ikeda, Feng Zhang, et al. "Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells." Journal of Applied Physics 127, no. 1 (2020): 013103. http://dx.doi.org/10.1063/1.5131716.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Дворецкий, С. А., М. Ф. Ступак, Н. Н. Михайлов та ін. "Новые центры рекомбинации в слоях КРТ МЛЭ на подложках (013) GaAs". Физика твердого тела 65, № 1 (2023): 56. http://dx.doi.org/10.21883/ftt.2023.01.53923.466.

Full text

Abstract:

A large inhomogeneity of the minority lifetime from 1 to 10 µs at 77 K over the area is observed in some experiments when high-quality HgCdTe layers of the electronic type of conductivity are grown on GaAs substrates with a diameter of 76.2 mm with the (013) orientation by the method of molecular beam epitaxy. As a rule, the such lifetimes are determined by carrier recombination at Shockley-Hall-Read (SHR) centers. Modern studies and ideas about the nature of the SHR centers do not allow us to explain the observed results. The measurements of HgCdTe layers by the second harmonic generation showed the existence of a quasi-periodic change in the signal at the minima of the azimuthal dependence, which is associated with the appearance of misoriented microregions of the crystal structure. The amplitude of the quasi-periodic change in the signal decreases with increasing lifetime and completely disappears for regions with higher lifetime values. Similar dependences are observed during etching of HgCdTe layers, which indicates the existence of misoriented microregions in the bulk. Thus, misoriented microregions of the crystal structure have a significant effect on the lifetime and are new centers of Shockley-Hall-Read recombination.

APA, Harvard, Vancouver, ISO, and other styles

20

Usman, Muhammad, Urooj Mushtaq, Dong-Guang Zheng, Dong-Pyo Han, Muhammad Rafiq, and Nazeer Muhammad. "Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode." Applied Sciences 9, no. 1 (2018): 77. http://dx.doi.org/10.3390/app9010077.

Full text

Abstract:

To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficiency of the proposed W-LED. The improvement is associated with significantly improved hole confinement due to the localization of indium in the active region, leading to improved radiative recombination rate. In addition, the proposed device shows reduced defect-assisted Shockley-Read-Hall (SRH) recombination rate as well as Auger recombination rate. Moreover, the efficiency rolloff in the proposed device is associated with increased built-in electromechanical field.

APA, Harvard, Vancouver, ISO, and other styles

21

Sachenko, Anatoly, Vitaliy Kostylyov, Mykola Gerasymenko, et al. "Analysis of the silicon solar cells efficiency. Type of doping and level optimization." Semiconductor Physics, Quantum Electronics & Optoelectronics. 19, no. 1 (2016): 67–74. https://doi.org/10.15407/spqeo19.01.067.

Full text

Abstract:

The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination in the silicon bulk is determined by the deep level of Fe. It has shown that, due to asymmetry of recombination parameters inherent to this level, the photovoltaic conversion efficiency is increased in SC with the n-type base and decreased in SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of SC based on a-Si:H–n-Si heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cell characteristics has been made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters’ values. Apart from the key characteristics of SC, surface recombination rate and series resistance were determined from the results of this comparison, in full agreement with the experimental findings.

APA, Harvard, Vancouver, ISO, and other styles

22

Mayani, Maryam Gholami, and Turid Worren Reenaas. "Shockley-Read-Hall recombination in pre-filled and photo-filled intermediate band solar cells." Applied Physics Letters 105, no. 7 (2014): 073904. http://dx.doi.org/10.1063/1.4893613.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Tzabari, Lior, and Nir Tessler. "Shockley–Read–Hall recombination in P3HT:PCBM solar cells as observed under ultralow light intensities." Journal of Applied Physics 109, no. 6 (2011): 064501. http://dx.doi.org/10.1063/1.3549820.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Chang, Jih-Yuan, Ya-Hsuan Shih, Man-Fang Huang, Fang-Ming Chen, and Yen-Kuang Kuo. "Shockley-Read-Hall and Auger Recombination in Blue InGaN Tunnel-Junction Light-Emitting Diodes." physica status solidi (a) 215, no. 21 (2018): 1800271. http://dx.doi.org/10.1002/pssa.201800271.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Sogabe, Tomah, Kodai Shiba, and Katsuyoshi Sakamoto. "Hydrodynamic and Energy Transport Model-Based Hot-Carrier Effect in GaAs pin Solar Cell." Electronic Materials 3, no. 2 (2022): 185–200. http://dx.doi.org/10.3390/electronicmat3020016.

Full text

Abstract:

The hot-carrier effect and hot-carrier dynamics in GaAs solar cell device performance were investigated. Hot-carrier solar cells based on the conventional operation principle were simulated based on the detailed balance thermodynamic model and the hydrodynamic energy transportation model. A quasi-equivalence between these two models was demonstrated for the first time. In the simulation, a specially designed GaAs solar cell was used, and an increase in the open-circuit voltage was observed by increasing the hot-carrier energy relaxation time. A detailed analysis was presented regarding the spatial distribution of hot-carrier temperature and its interplay with the electric field and three hot-carrier recombination processes: Auger, Shockley–Read–Hall, and radiative recombinations.

APA, Harvard, Vancouver, ISO, and other styles

26

Fu, Jing, Lin Wen, Jie Feng, et al. "Quantum Efficiency Simulation and Analysis of Irradiated Complementary Metal-Oxide Semiconductor Image Sensors." Journal of Nanoelectronics and Optoelectronics 17, no. 2 (2022): 311–18. http://dx.doi.org/10.1166/jno.2022.3199.

Full text

Abstract:

A quantum efficiency model of complementary metal-oxide semiconductor image sensors based on Shockley–Read–Hall and Auger recombination is developed using the technology computer-aided design tool, and the quantum efficiency degradation after irradiation is analyzed. By simulating the surface recombination velocity and depletion region width of the photodiode, the decrease in the quantum efficiency of complementary metal-oxide semiconductor image sensors under short and long incident light wavelengths is found to be caused by the increase in the surface recombination velocity and capture of optical carriers by radiation-induced defects in the epitaxial layer, respectively. In addition, a method to reduce the quantum efficiency degradation behavior of an irradiated pixel is discussed.

APA, Harvard, Vancouver, ISO, and other styles

27

Anchal, Neha, and Bijay Kumar Sahoo. "Polarization mechanism and Shockley Read Hall recombination on Quantum Efficiency of InGaN/GaN Blue LED." IOP Conference Series: Materials Science and Engineering 798 (May 27, 2020): 012017. http://dx.doi.org/10.1088/1757-899x/798/1/012017.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Sugawara, Y., N. Nakajima, and S. Fukatsu. "Diminished Shockley–Read–Hall recombination in near-surface pseudomorphic Si1−xGex/Si double quantum wells." Thin Solid Films 508, no. 1-2 (2006): 414–17. http://dx.doi.org/10.1016/j.tsf.2005.09.199.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Chai, X. L., Y. Zhou, W. L. Zhang, et al. "High efficiency mid-infrared interband cascade light emitting diodes with immersion lens." Applied Physics Letters 122, no. 12 (2023): 121103. http://dx.doi.org/10.1063/5.0143226.

Full text

Abstract:

We report on ten-stage interband cascade light-emitting diodes (ICLEDs) using an InAs/GaAsSb superlattices active region with a peak emission wavelength of 4.9 μm at the temperature of 80 K. The ICLED devices integrated with an immersion lens achieve a wall-plug quantum efficiency of 6.6% and an emittance of 1.9 W/cm2 under 80 K and 7.7 A/cm2, which is seven times larger than the basic device without the immersion lens. We present a detailed analysis of the recombination rates and their relationship with the quantum efficiency. The Shockley–Read–Hall and Auger recombination rates were measured using carrier-density dependent time-resolved photoluminescence spectra. The band structure of InAs/GaAsSb superlattices is calculated to study their relationship with the Auger recombination rates.

APA, Harvard, Vancouver, ISO, and other styles

30

David, Aurelien, Christophe A. Hurni, Nathan G. Young, and Michael D. Craven. "Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells." Applied Physics Letters 111, no. 23 (2017): 233501. http://dx.doi.org/10.1063/1.5003112.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Tanaka, Kazuhiro, and Masashi Kato. "Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions." Japanese Journal of Applied Physics 63, no. 1 (2024): 011002. http://dx.doi.org/10.35848/1347-4065/ad160c.

Full text

Abstract:

Abstract We investigate carrier recombination mechanisms in heavily aluminum (Al) doped p-type 4H-SiC, a material crucial for power devices. The recombination mechanisms in Al-doped p-type 4H-SiC have remained unclear, with reports suggesting various possibilities. To gain insights, we employ photoluminescence (PL) measurements, particularly time-resolved PL (TR-PL), as they are well-suited for studying carrier lifetimes in heavily Al-doped p-type 4H-SiC. We examine the temperature and excitation intensity dependencies of TR-PL and PL spectra and discuss the underlying recombination mechanisms. We observe that the dominant recombination mechanism varies with injection conditions for the samples with Al concentration less than 1019 cm−3. Under low injection conditions, recombination via the Al acceptor level appears dominant, exhibiting weak temperature dependence. However, under high injection conditions, Shockley–Read–Hall recombination takes precedence, leading to shorter carrier lifetimes with increasing temperature. This temperature dependence implies that presences of the deep recombination centers with the small capture barrier for holes.

APA, Harvard, Vancouver, ISO, and other styles

32

Aeberhard, Urs. "Quantum-kinetic Theory of Defect-mediated Recombination in Nanostructure-based Photovoltaic Devices." MRS Proceedings 1493 (2013): 91–96. http://dx.doi.org/10.1557/opl.2013.226.

Full text

Abstract:

ABSTRACTIn this paper, a quantum-kinetic equivalent of Shockley-Read-Hall recombination is derived within the non-equilibrium Green's function formalism for a photovoltaic system with selectively contacted extended-state absorbers and a localized deep defect state in the energy gap. The novel approach is tested on a homogeneous bulk absorber and then applied to a thin film photo-diode with large built-in field in the defect-rich absorber region. While the quantum-kinetic treatment reproduces the semi-classical characteristics for a bulk absorber in quasi-equilibrium conditions, for which the latter picture is valid, it reveals in the thin film case non-classical characteristics of recombination enhanced by tunneling into field-induced sub-gap states.

APA, Harvard, Vancouver, ISO, and other styles

33

Dreyer, Cyrus E., Audrius Alkauskas, John L. Lyons, James S. Speck, and Chris G. Van de Walle. "Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters." Applied Physics Letters 108, no. 14 (2016): 141101. http://dx.doi.org/10.1063/1.4942674.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Aberle, Armin G., Stefan Glunz, and Wilhelm Warta. "Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface." Journal of Applied Physics 71, no. 9 (1992): 4422–31. http://dx.doi.org/10.1063/1.350782.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Schenk, A. "An improved approach to the Shockley–Read–Hall recombination in inhomogeneous fields of space‐charge regions." Journal of Applied Physics 71, no. 7 (1992): 3339–49. http://dx.doi.org/10.1063/1.350929.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Olivier, Francois, Anis Daami, Christophe Licitra, and Francois Templier. "Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study." Applied Physics Letters 111, no. 2 (2017): 022104. http://dx.doi.org/10.1063/1.4993741.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Sachenko, A. V. "The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 4 (2016): 334–42. http://dx.doi.org/10.15407/spqeo19.04.334.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Boulfrad, Yacine, Gaute Stokkan, Mohammed M'Hamdi, Eivind Øvrelid, and Lars Arnberg. "Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot." Solid State Phenomena 178-179 (August 2011): 507–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.507.

Full text

Abstract:

Lifetime distribution of a multicrystalline silicon ingot of 250 mm diameter and 100 mm height, grown by unidirectional solidification has been modeled. The model computes the combined effect of interstitial iron and dislocation distribution on minority carrier lifetime of the ingot based on Shockley Read Hall (SRH) recombination model for iron point defects and Donolato’s model for recombination on dislocations. The iron distribution model was based on the solid state diffusion of iron from the crucible and coating to the ingot during its solidification and cooling, taking into account segregation of iron to the melt and back diffusion after the end of solidification. Dislocation density distribution is determined from experimental data obtained by PVScan analysis from a vertical cross section slice. Calculated lifetime is fitted to the measured one by fitting parameters relating the recombination strength and the local concentration of iron

APA, Harvard, Vancouver, ISO, and other styles

39

Huang, Yang, Zhiqiang Liu, Xiaoyan Yi, et al. "Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes." Modern Physics Letters B 30, no. 20 (2016): 1650221. http://dx.doi.org/10.1142/s0217984916502213.

Full text

Abstract:

A new model for efficiency droop in InGaN/GaN light-emitting diodes (LEDs) is proposed, where the primary nonradiative recombination mechanisms, including Shockley–Read–Hall (SRH), Auger and carrier leakage, are considered. A room-temperature external quantum efficiency (EQE) measurement was performed on our designed samples and analyzed by the new model. Owing to advantages over the common “[Formula: see text] model”, the “new model” is able to effectively extract recombination coefficients and calculate the leakage currents of the hole and electron. From this new model, we also found that hole leakage is distinct at low injection, while it disappears at high injection, which is contributed to the weak blocking effect of electron in quantum wells (QWs) at low injection.

APA, Harvard, Vancouver, ISO, and other styles

40

Sachenko, A. V. "Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes." Semiconductor Physics Quantum Electronics and Optoelectronics 20, no. 1 (2017): 34–40. http://dx.doi.org/10.15407/spqeo20.01.034.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Hu, Sai, and Karl Hess. "An Application of the Recombination and Generation Theory by Shockley, Read and Hall to Biological Ion Channels." Journal of Computational Electronics 4, no. 1-2 (2005): 153–56. http://dx.doi.org/10.1007/s10825-005-7128-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Chen, Fang-Ming, Man-Fang Huang, Jih-Yuan Chang, and Yen-Kuang Kuo. "Effects of number of quantum wells and Shockley–Read–Hall recombination in deep-ultraviolet light-emitting diodes." Optics Letters 45, no. 13 (2020): 3749. http://dx.doi.org/10.1364/ol.397140.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Liu, Wei, Degang Zhao, Desheng Jiang, et al. "Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes." Journal of Physics D: Applied Physics 49, no. 14 (2016): 145104. http://dx.doi.org/10.1088/0022-3727/49/14/145104.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Buffolo, Matteo, Alessandro Magri, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini. "Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics." Materials 14, no. 5 (2021): 1114. http://dx.doi.org/10.3390/ma14051114.

Full text

Abstract:

We present a detailed analysis of the gradual degradation mechanisms of InGaAs Light-Emitting Diodes (LEDs) tuned for optical emission in the 1.45–1.65 μm range. Specifically, we propose a simple and effective methodology for estimating the relative changes in non-radiative lifetime, and a procedure for extracting the properties of defects responsible for Shockley-Read-Hall recombination. By means of a series of accelerated aging experiments, during which we evaluated the variations of the optical and electrical characteristics of three different families of LEDs, we were able to identify the root causes of device degradation. Specifically, the experimental results show that, both for longer stress time at moderate currents or for short-term stress under high injection levels, all the devices are affected: (i) by a partial recovery of the optical emission at the nominal bias current; and (ii) by a decrease in the emission in low-bias regime. This second process was deeply investigated, and was found to be related to the decrease in the non-radiative Shockley-Read-Hall (SRH) lifetime due to the generation/propagation of defects within the active region of the LEDs. Devices tuned for longer-wavelength emission exhibited a second degradation process, which was found to modify the carrier injection dynamics and further speed-up optical degradation in the low bias regime. These processes were ascribed to the effects of a second non-radiative recombination center, whose formation within the active region of the device was induced by the aging procedure. Through mathematical analysis of the degradation data, we could quantify the percentage variation in SRH lifetime, and identify the activation energy of the related defects.

APA, Harvard, Vancouver, ISO, and other styles

45

Евстигнеев, В. С., В. С. Варавин, А. В. Чилясов, В. Г. Ремесник, А. Н. Моисеев та Б. С. Степанов. "Электрофизические свойства нелегированных и легированных мышьяком эпитаксиальных слоев Hg-=SUB=-1-x-=/SUB=-Cd-=SUB=-x-=/SUB=-Te p-типа проводимости с x~0.4, выращенных методом MOCVD". Физика и техника полупроводников 52, № 6 (2018): 554. http://dx.doi.org/10.21883/ftp.2018.06.45914.8696.

Full text

Abstract:

AbstractThe temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped p -type Hg_1 – x Cd_ x Te epitaxial layers with x ≈ 0.4 grown by the MOCVD-IMP (metalorganic chemical vapor deposition–interdiffusion multilayer process) method are studied. It is shown that the temperature dependences of the charge-carrier concentration can be described by a model assuming the presence of one acceptor and one donor level. The ionization energies of acceptors in the undoped and arsenic-doped materials are 14 and 3.6 meV, respectively. It is established that the dominant recombination mechanism in the undoped layers is Shockley–Read–Hall recombination, and after low-temperature equilibrium annealing in mercury vapors (230°C, 24 h), the dominant mechanism is radiative recombination. The fundamental limitation of the lifetime in the arsenic-doped material is caused by the Auger-7 process. Activation annealing (360°C, 2 h) of the doped layers makes it possible to attain the 100% activation of arsenic.

APA, Harvard, Vancouver, ISO, and other styles

46

Chu, Weibin, Qijing Zheng, Oleg V. Prezhdo, Jin Zhao, and Wissam A. Saidi. "Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination." Science Advances 6, no. 7 (2020): eaaw7453. http://dx.doi.org/10.1126/sciadv.aaw7453.

Full text

Abstract:

Low-cost solution-based synthesis of metal halide perovskites (MHPs) invariably introduces defects in the system, which could form Shockley-Read-Hall (SRH) electron-hole recombination centers detrimental to solar conversion efficiency. Here, we investigate the nonradiative recombination processes due to native point defects in methylammonium lead halide (MAPbI3) perovskites using ab initio nonadiabatic molecular dynamics within surface-hopping framework. Regardless of whether the defects introduce a shallow or deep band state, we find that charge recombination in MAPbI3 is not enhanced, contrary to predictions from SRH theory. We demonstrate that this strong tolerance against defects, and hence the breakdown of SRH, arises because the photogenerated carriers are only coupled with low-frequency phonons and electron and hole states overlap weakly. Both factors appreciably decrease the nonadiabatic coupling. We argue that the soft nature of the inorganic lattice with small bulk modulus is key for defect tolerance, and hence, the findings are general to other MHPs.

APA, Harvard, Vancouver, ISO, and other styles

47

CONNELLY, BLAIR C., GRACE D. METCALFE, PAUL H. SHEN, and MICHAEL WRABACK. "TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS." International Journal of High Speed Electronics and Systems 20, no. 03 (2011): 541–48. http://dx.doi.org/10.1142/s0129156411006830.

Full text

Abstract:

We report time-resolved photoluminescence measurements on a set of long-wave infrared InAs / GaSb type II superlattice absorber samples with various widths as a function of temperature and excitation density. Careful analysis of the photoluminescence data determines the minority carrier lifetime and background carrier density as a function of temperature, and provides information on the acceptor energy and density in each sample. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination with a lifetime of ~30 ns at 77 K for all samples. Below 40 K, background carriers are observed to freeze-out in conjunction with increased contributions from radiative recombination. An acceptor energy level of ~20 meV above the valance band is also determined for all samples. Variations of carrier lifetime between each sample do not strongly correlate with absorber width, indicating that barrier recombination is not the dominant factor limiting the carrier lifetime in our samples.

APA, Harvard, Vancouver, ISO, and other styles

48

Zhao, Zengchao, Bingye Zhang, Ping Li, Wan Guo, and Aimin Liu. "Effective Passivation of Large Area Black Silicon Solar Cells bySiO2/SiNx:H Stacks." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/683654.

Full text

Abstract:

The performance of black silicon solar cells with various passivation films was characterized. Large area (156×156 mm2) black silicon was prepared by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 13.8%. For the SiO2andSiNx:H passivation, the conversion efficiency of black silicon solar cells increases to 16.1% and 16.5%, respectively. Compared to the single film of surface passivation of black silicon solar cells, the SiO2/SiNx:H stacks exhibit the highest efficiency of 17.1%. The investigation of internal quantum efficiency (IQE) suggests that the SiO2/SiNx:H stacks films decrease the Auger recombination through reducing the surface doping concentration and surface state density of the Si/SiO2interface, andSiNx:H layer suppresses the Shockley-Read-Hall (SRH) recombination in the black silicon solar cell, which yields the best electrical performance of b-Si solar cells.

APA, Harvard, Vancouver, ISO, and other styles

49

Shura, Megersa Wodajo. "A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor." Advances in Materials Science and Engineering 2021 (September 7, 2021): 1–13. http://dx.doi.org/10.1155/2021/5568880.

Full text

Abstract:

In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. Next, the very important quantities called the excess carriers’ trapping ratios were described as functions of the localized state energies. Variations of the magnitudes of the excess carriers’ trapping ratios with the localized state energies enable us to categorize the localized states in the bandgap as the recombination, the trapping, the acceptor, and the donor levels. Effects of the majority and the minority carriers’ trapping on the excess carrier lifetimes are also evaluated at different localized energy levels. The obtained results reveal that only excess minority trapping affects the excess carrier lifetimes, and excess majority carrier trapping has no effect.

APA, Harvard, Vancouver, ISO, and other styles

50

Fang, Ruilin, Guang-Qiong Xia, Yan-Fei Zheng, Qing-Qing Wang, and Zheng-Mao Wu. "Nonlinear Dynamics of Silicon-Based Epitaxial Quantum Dot Lasers under Optical Injection." Photonics 11, no. 8 (2024): 684. http://dx.doi.org/10.3390/photonics11080684.

Full text

Abstract:

For silicon-based epitaxial quantum dot lasers (QDLs), the mismatches of the lattice constants and the thermal expansion coefficients lead to the generation of threaded dislocations (TDs), which act as the non-radiative recombination centers through the Shockley–Read–Hall (SRH) recombination. Based on a three-level model including the SRH recombination, the nonlinear properties of the silicon-based epitaxial QDLs under optical injection have been investigated theoretically. The simulated results show that, through adjusting the injection parameters including injection strength and frequency detuning, the silicon-based epitaxial QDLs can display rich nonlinear dynamical states such as period one (P1), period two (P2), multi-period (MP), chaos (C), and injection locking (IL). Relatively speaking, for a negative frequency detuning, the evolution of the dynamical state with the injection strength is more abundant, and an evolution path P1-P2-MP-C-MP-IL has been observed. Via mapping the dynamical state in the parameter space of injection strength and frequency detuning under different SRH recombination lifetime, the effects of SRH recombination lifetime on the nonlinear dynamical state of silicon-based epitaxial QDLs have been analyzed.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!