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Journal articles on the topic 'Short-channel'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 March 2023

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1

Gagnon, Louis, Robert J. Cooper, Meryem A. Yücel, Katherine L. Perdue, Douglas N. Greve, and David A. Boas. "Short separation channel location impacts the performance of short channel regression in NIRS." NeuroImage 59, no. 3 (February 2012): 2518–28. http://dx.doi.org/10.1016/j.neuroimage.2011.08.095.

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2

Pearce, C. W., and D. S. Yaney. "Short-channel effects in MOSFET's." IEEE Electron Device Letters 6, no. 7 (July 1985): 326–28. http://dx.doi.org/10.1109/edl.1985.26143.

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3

Suzuki, K. "Short channel epi-MOSFET model." IEEE Transactions on Electron Devices 47, no. 12 (2000): 2372–78. http://dx.doi.org/10.1109/16.887024.

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4

Schulz, T., W. Rosner, L. Risch, A. Korbel, and U. Langmann. "Short-channel vertical sidewall MOSFETs." IEEE Transactions on Electron Devices 48, no. 8 (2001): 1783–88. http://dx.doi.org/10.1109/16.936708.

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5

Karimov, A. V., D. M. Yodgorova, and O. A. Abdulkhaev. "Long-channel field-effect transistor with short-channel transistor properties." Semiconductors 48, no. 4 (April 2014): 481–86. http://dx.doi.org/10.1134/s1063782614040137.

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6

Sarrafzadeh, M. "Channel routing with provably short wires." IEEE Transactions on Circuits and Systems 34, no. 9 (September 1987): 1133–35. http://dx.doi.org/10.1109/tcs.1987.1086260.

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7

Mazure, C., and M. Orlowski. "Guidelines for reverse short-channel behavior." IEEE Electron Device Letters 10, no. 12 (December 1989): 556–58. http://dx.doi.org/10.1109/55.43138.

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8

Kuivalainen, P., M. Andersson, S. Eränen, and H. Ronkainen. "Enhanced model for short channel MOSFETs." Physica Scripta 46, no. 5 (November 1, 1992): 476–80. http://dx.doi.org/10.1088/0031-8949/46/5/016.

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9

Wu, Jianzhi, Jie Min, and Yuan Taur. "Short-Channel Effects in Tunnel FETs." IEEE Transactions on Electron Devices 62, no. 9 (September 2015): 3019–24. http://dx.doi.org/10.1109/ted.2015.2458977.

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10

Eneman, G., B. De Jaeger, G. Wang, J. Mitard, G. Hellings, D. P. Brunco, E. Simoen, et al. "Short-channel epitaxial germanium pMOS transistors." Thin Solid Films 518, no. 6 (January 2010): S88—S91. http://dx.doi.org/10.1016/j.tsf.2009.10.063.

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11

Veeraraghavan, S., and J. G. Fossum. "Short-channel effects in SOI MOSFETs." IEEE Transactions on Electron Devices 36, no. 3 (March 1989): 522–28. http://dx.doi.org/10.1109/16.19963.

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12

Gupta, Deepika, and Santosh Kumar Vishvakarma. "Improved Short-Channel Characteristics With Long Data Retention Time in Extreme Short-Channel Flash Memory Devices." IEEE Transactions on Electron Devices 63, no. 2 (February 2016): 668–74. http://dx.doi.org/10.1109/ted.2015.2510018.

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13

Yu, Sang Dae. "A Unified Channel Thermal Noise Model for Short Channel MOS Transistors." JSTS:Journal of Semiconductor Technology and Science 13, no. 3 (June 30, 2013): 213–23. http://dx.doi.org/10.5573/jsts.2013.13.3.213.

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14

Shahidi, G. G., B. Davari, T. J. Bucelot, P. A. Ronsheim, P. J. Coane, S. Pollack, C. R. Blair, B. Clark, and H. H. Hansen. "Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs." IEEE Electron Device Letters 14, no. 8 (August 1993): 409–11. http://dx.doi.org/10.1109/55.225595.

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15

Suzuki, K. "Short channel MOSFET model using a universal channel depletion width parameter." IEEE Transactions on Electron Devices 47, no. 6 (June 2000): 1202–8. http://dx.doi.org/10.1109/16.842962.

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16

Manku, T., M. Obrecht, and Y. Lin. "High-frequency dependence of channel noise in short-channel RF MOSFETs." IEEE Electron Device Letters 20, no. 9 (September 1999): 481–83. http://dx.doi.org/10.1109/55.784459.

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17

Cho, Moonju, Philippe Roussel, Ben Kaczer, Robin Degraeve, Jacopo Franco, Marc Aoulaiche, Thomas Chiarella, Thomas Kauerauf, Naoto Horiguchi, and Guido Groeseneken. "Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs." IEEE Transactions on Electron Devices 60, no. 12 (December 2013): 4002–7. http://dx.doi.org/10.1109/ted.2013.2285245.

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18

Smeys, P., A. Clerix, and J. P. Colinge. "Short channel effect in thin-film accumulation-modep-channel SOI MOSFETs." Electronics Letters 27, no. 11 (May 23, 1991): 970–71. http://dx.doi.org/10.1049/el:19910605.

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19

Noborio, Masato, Y. Kanzaki, Jun Suda, Tsunenobu Kimoto, and Hiroyuki Matsunami. "Short-Channel Effects in 4H-SiC MOSFETs." Materials Science Forum 483-485 (May 2005): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.821.

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Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type 4H-SiC (0001), (000-1) and (11-20) faces.^Short-channel effects such as punchthrough behavior, decrease of threshold voltage and deterioration of subthreshold characteristics are observed. Furthermore, the critical channel lengths below which short-channel effects occur are analyzed as a function of p-body doping and oxide thickness by using device simulation. The critical channel lengths in the fabricated SiC MOSFETs are in agreement with those obtained from the device simulation. The results are also in agreement with the empirical relationship for Si MOSFETs.

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20

Honda, Hirotake, Makoto Ogata, Hiroshi Sawazaki, Shuichi Ono, and Manabu Arai. "RF Characteristics of Short-Channel SiC MESFETs." Materials Science Forum 433-436 (September 2003): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.433-436.745.

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21

VinayakPrakash, Khairnar, Abhijeet Kumar, and Prerana Jain. "Circumventing Short Channel Effects in FETs: Review." International Journal of Computer Applications 117, no. 17 (May 20, 2015): 24–30. http://dx.doi.org/10.5120/20648-3407.

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22

Sheu, B., and P. Ko. "Short-channel effects on MOS transistor capacitances." IEEE Transactions on Circuits and Systems 33, no. 10 (October 1986): 1030–32. http://dx.doi.org/10.1109/tcs.1986.1085841.

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23

Moschou, Despina C., Christoforos G. Theodorou, Nikolaos A. Hastas, Andreas Tsormpatzoglou, Dimitrios N. Kouvatsos, Apostolos T. Voutsas, and Charalabos A. Dimitriadis. "Short Channel Effects on LTPS TFT Degradation." Journal of Display Technology 9, no. 9 (September 2013): 747–54. http://dx.doi.org/10.1109/jdt.2012.2231049.

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24

Moral, C. N., M. Bawedin, F. Andrieu, B. Sagnes, and S. Cristoloveanu. "Unusual Short-Channel Effects in SOI MOSFETs." ECS Transactions 54, no. 1 (June 28, 2013): 197–202. http://dx.doi.org/10.1149/05401.0197ecst.

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25

Falk, Melanie, Gerhard Bauch, and Ivor Nissen. "On Channel Codes for Short Underwater Messages." Information 11, no. 2 (January 23, 2020): 58. http://dx.doi.org/10.3390/info11020058.

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Acoustic underwater communication is a challenging task. For a reliable transmission, not only good channel estimation and equalization, but also strong error correcting codes are needed. In this paper, we present the results of the coding competition “Wanted: Best channel codes for short underwater messages” as well as our own findings on the influence of the modulation alphabet size in the example of non-binary polar codes. Furthermore, the proposals of the competition are compared to other commonly used channel codes.

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26

Annou, R., V. K. Tripathi, and M. P. Srivastava. "Plasma channel formation by short pulse laser." Physics of Plasmas 3, no. 4 (April 1996): 1356–59. http://dx.doi.org/10.1063/1.871727.

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27

Lu, Zhichao, and Jerry G. Fossum. "Short-Channel Effects in Independent-Gate FinFETs." IEEE Electron Device Letters 28, no. 2 (February 2007): 145–47. http://dx.doi.org/10.1109/led.2006.889236.

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28

Chang-Dong Kim and M. Matsumura. "Short-channel amorphous-silicon thin-film transistors." IEEE Transactions on Electron Devices 43, no. 12 (1996): 2172–76. http://dx.doi.org/10.1109/16.544388.

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29

Lee, J. I., M. B. Lee, K. N. Kang, and K. O. Park. "Mobility reduction parameters in short-channel MOSFETs." Electronics Letters 25, no. 11 (May 25, 1989): 753–54. http://dx.doi.org/10.1049/el:19890509.

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30

Viswanathan, C. R., B. C. Burkey, G. Lubberts, and T. J. Tredwell. "Threshold voltage in short-channel MOS devices." IEEE Transactions on Electron Devices 32, no. 5 (May 1985): 932–40. http://dx.doi.org/10.1109/t-ed.1985.22050.

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31

Wang, C. T. "Threshold behavior of short-channel LDD MOSFET's." IEEE Transactions on Electron Devices 34, no. 2 (February 1987): 452–54. http://dx.doi.org/10.1109/t-ed.1987.22944.

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32

Breitschädel, O., L. Kley, H. Gräbeldinger, J. T. Hsieh, B. Kuhn, F. Scholz, and H. Schweizer. "Short-channel effects in AlGAN/GaN HEMTs." Materials Science and Engineering: B 82, no. 1-3 (May 2001): 238–40. http://dx.doi.org/10.1016/s0921-5107(00)00747-9.

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33

Kołodziej, Andrzej, Joanna Łojewska, Tomasz Łojewski, and Marzena Iwaniszyn. "Short-channel structures of triangular cross-section." International Journal of Heat and Mass Transfer 54, no. 15-16 (July 2011): 3291–95. http://dx.doi.org/10.1016/j.ijheatmasstransfer.2011.03.058.

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34

Chu Hao, B. Cabon-Till, S. Cristoloveanu, and G. Ghibaudo. "Experimental determination of short-channel MOSFET parameters." Solid-State Electronics 28, no. 10 (October 1985): 1025–30. http://dx.doi.org/10.1016/0038-1101(85)90034-6.

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35

Sandborn, P. A., J. R. East, and G. I. Haddad. "Diffusion effects in short-channel GaAs MESFETs." Solid-State Electronics 32, no. 3 (March 1989): 191–98. http://dx.doi.org/10.1016/0038-1101(89)90091-9.

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36

Tarr, N. G., D. J. Walkey, M. B. Rowlandson, S. B. Hewitt, and T. W. MacElwee. "Short-channel effects on MOSFET subthreshold swing." Solid-State Electronics 38, no. 3 (March 1995): 697–701. http://dx.doi.org/10.1016/0038-1101(94)00147-8.

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37

Das, Rinku Rani, Santanu Maity, Atanu Choudhury, Apurba Chakraborty, C. T. Bhunia, and Partha P. Sahu. "Temperature-dependent short-channel parameters of FinFETs." Journal of Computational Electronics 17, no. 3 (July 12, 2018): 1001–12. http://dx.doi.org/10.1007/s10825-018-1212-y.

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38

Hartstein, A. "Conductance in ultra-short channel Si MOSFETs." Surface Science 263, no. 1-3 (February 1992): 162–66. http://dx.doi.org/10.1016/0039-6028(92)90328-4.

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39

Gao, Qingguo, Xuefei Li, Mengchuan Tian, Xiong Xiong, Zhenfeng Zhang, and Yanqing Wu. "Short-Channel Graphene Mixer With High Linearity." IEEE Electron Device Letters 38, no. 8 (August 2017): 1168–71. http://dx.doi.org/10.1109/led.2017.2718732.

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40

Andersson, M., and P. Kuivalainen. "Transit-time model for short-channel MOSFET's." IEEE Transactions on Electron Devices 40, no. 4 (April 1993): 830–32. http://dx.doi.org/10.1109/16.202799.

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41

Triantis, D. P., A. N. Birbas, and D. Kondis. "Thermal noise modeling for short-channel MOSFETs." IEEE Transactions on Electron Devices 43, no. 11 (1996): 1950–55. http://dx.doi.org/10.1109/16.543032.

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42

Suzuki, K., and S. Pidin. "Short-channel single-gate soi mosfet model." IEEE Transactions on Electron Devices 50, no. 5 (May 2003): 1297–305. http://dx.doi.org/10.1109/ted.2003.813450.

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43

Murali, R., B. L. Austin, L. Wang, and J. D. Meindl. "Short-Channel Modeling of Bulk Accumulation MOSFETs." IEEE Transactions on Electron Devices 51, no. 6 (June 2004): 940–47. http://dx.doi.org/10.1109/ted.2004.828276.

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44

Aghdaie, B., and B. Sheu. "The long and short of channel length." IEEE Circuits and Devices Magazine 15, no. 5 (1999): 47–51. http://dx.doi.org/10.1109/101.795092.

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45

Petrova, R., R. Kamburova, and P. Vitanov. "Hot carriers' effects in short channel devices." Microelectronics Reliability 26, no. 1 (January 1986): 155–62. http://dx.doi.org/10.1016/0026-2714(86)90781-x.

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46

Ishii, Tomoyasu, Shinichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Östling, and Carl Mikael Zetterling. "Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs." Materials Science Forum 963 (July 2019): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.963.613.

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Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.

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47

Winstead, B., W. J. Taylor, E. Verret, K. Loiko, D. Tekleab, C. Capasso, M. Foisy, and S. B. Samavedam. "SiGe-Channel Confinement Effects for Short-Channel PFETs With Nonbandedge Gate Workfunctions." IEEE Electron Device Letters 28, no. 8 (August 2007): 719–21. http://dx.doi.org/10.1109/led.2007.900860.

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48

Bin Yu, C. H. J. Wann, E. D. Nowak, K. Noda, and Chenming Hu. "Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's." IEEE Transactions on Electron Devices 44, no. 4 (April 1997): 627–34. http://dx.doi.org/10.1109/16.563368.

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49

Huang, J. S. T., and J. W. Schrankler. "Flat-band voltage dependence on channel length in short-channel threshold model." IEEE Transactions on Electron Devices 32, no. 5 (May 1985): 1001–2. http://dx.doi.org/10.1109/t-ed.1985.22062.

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50

Chyau, Chwan-Gwo, and Sheng-Lyang Jang. "A physics-based short-channel current–voltage model for buried-channel MOSFETs." Solid-State Electronics 43, no. 7 (July 1999): 1177–88. http://dx.doi.org/10.1016/s0038-1101(99)00010-6.

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