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Journal articles on the topic 'Short circui'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

NEDOBITKOV, A. I. "ОСОБЕННОСТИ КОРОТКОГО ЗАМЫКАНИЯ В АВТОМОБИЛЬНОЙ ЭЛЕКТРИЧЕСКОЙ СЕТИ". ПОЖАРОВЗРЫВОБЕЗОПАСНОСТЬ 27, № 5 (2018): 34–49. http://dx.doi.org/10.18322/pvb.2018.27.5.34-49.

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2

MAYER, Daniel, Bohuš ULRYCH, and Petr KROPÍK. "HEATING OF THREE-PHASE SHIELDED SUPPLY AT SHORT CIRCUIT." Acta Electrotechnica et Informatica 15, no. 4 (2015): 13–16. http://dx.doi.org/10.15546/aeei-2015-0030.

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3

Dorzhieva, B. S. "Short-circuit currents versus inductive reactances of turbo-genset for different types of shorts." Transactions of the Krylov State Research Centre S-I, no. 2 (2021): 60–65. http://dx.doi.org/10.24937/2542-2324-2021-2-s-i-60-65.

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This paper discusses how short-circuit currents of turbo-genset depend on its inductive reactances for the cases of triple-, double- and single-phase shorts. The study tackles air-cooled turbo-gensets. The purpose of this work was to investigate the effect of changes in synchronous, transient and subtransient inductive reactances of turbo-genset upon short-circuit currents for different types of shorts. Short-circuit currents were calculated as per Park-Gorev equations. The changes in currents were plotted against both longitudinal and transverse axes. The results were further used to plot sho

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4

Lawrentschuk, Nathan, and Paul A. Kearns. "Short circuit." Medical Journal of Australia 181, no. 11-12 (2004): 634. http://dx.doi.org/10.5694/j.1326-5377.2004.tb06496.x.

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5

Ghosh. "Short Circuit." Cultural Critique 108 (2020): 200. http://dx.doi.org/10.5749/culturalcritique.108.2020.0200.

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6

Fortner, Brian. "Short Circuit." Civil Engineering Magazine Archive 76, no. 12 (2006): 46–53. http://dx.doi.org/10.1061/ciegag.0000101.

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7

Ridgway, Andy. "Short circuit." New Scientist 228, no. 3044 (2015): 38–41. http://dx.doi.org/10.1016/s0262-4079(15)31468-8.

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8

Ghosh, Bishnupriya. "Short Circuit." Cultural Critique 108, no. 1 (2020): 200–208. http://dx.doi.org/10.1353/cul.2020.0027.

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9

Hachimenum, Nyebuchi Amadi. "Electromagnetic Forces in Power Transformers under short circuit conditions." Journal of Research and Advancement in Electrical Engineering 5, no. 3 (2022): 1–12. https://doi.org/10.5281/zenodo.7360290.

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<em>Power transformers are among the most expensive and key apparatuses in an electric power system. It is important thus, that they are properly protected and well-maintained. Transformers experience different stresses while in operation. The effect of electromagnetic force on transformer windings is worsened by electrical, mechanical, and thermal issues. Damage from the increase in electromagnetic force includes winding displacement, bending, and tearing. Therefore, it is essential to predict electromagnetic force when designing transformers. This paper investigated the causes and process of

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10

Aymami, J., B. Dulieu, R. Hahn, and R. Haug. "MIG short-circuit welding: on the short circuit duration." Journal of Physics D: Applied Physics 19, no. 8 (1986): L157—L159. http://dx.doi.org/10.1088/0022-3727/19/8/003.

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11

Koerig, Vieira Gilliard, Stefenon Stéfano Frizzo, Vitor Couto, Lima Leonardo Ceccato de, and Klaar Anne Carolina Rodrigues. "ANALYSIS OF COORDINATION AND SELECTIVITY BETWEEN PROTECTION DEVICES OF LOW VOLTAGE SYSTEM (440VAC)." International Journal of Development Research 07, no. 08 (2017): 14350–58. https://doi.org/10.5281/zenodo.883848.

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This study aims to analyze the coordination and selectivity of the protection in a low voltage industrial electrical installation, so that the protection devices isolate and eliminate the fault quickly and selectively. To achieve this objective, a survey of the installed loads was carried out, a conference of fuse values and adjustment of the thermal relays, verification of the gauge of the cables connecting the respective loads and calculations of the short-circuit current through a software. Therefore, we want to demonstrate the importance of the correct selection of protection equipment and

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12

Kim, Channoh, Sungmin Kim, Hyeon Gyu Cho, et al. "Short-circuit dispatch." ACM SIGARCH Computer Architecture News 44, no. 3 (2016): 291–303. http://dx.doi.org/10.1145/3007787.3001168.

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13

Musale, Prajakta P., Sandesh S. Rathod, Roshan J. Bhangare Tejas R. Runwal, Mehul R. Raut, and Rutuja A. Sarode. "Short Circuit Indicator." IOSR Journal of Electrical and Electronics Engineering 19, no. 6 (2024): 07–09. http://dx.doi.org/10.9790/0853-1906010709.

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This application introduces the short-circuit indicator, an important protection against electrical hazards in residential, commercial and industrial environments. This device continuously monitors the voltage in the circuit and acts as an alert sentry against dangerous surges. By using a preset threshold, the signal can distinguish between normal voltage fluctuations and short-circuit characteristic spikes. By detecting a jump, the register takes immediate action to prevent losses. It disconnects the circuit quickly, efficiently disconnecting abnormal electrical currents, and protects the con

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14

Zhao, Yue, Dong Guang Li, Wen Zhong Lou, Long Fei Zhang, Jian Hua Li, and Mao Bo Fang. "Study of a MEMS Short-Circuit Fuse Based on Electro-Thermal Theory." Key Engineering Materials 503 (February 2012): 277–83. http://dx.doi.org/10.4028/www.scientific.net/kem.503.277.

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With development of MEMS pyrotechnics devices such as semiconductor bridge/metal bridges, the energy required to fuze ignition becomes smaller and smaller. The energy needed for traditional short-circuit is far greater than MEMS pyrotechnics devices explosive, and takes a large space of fuze, which does not accord with the smaller trend in fuse volume and ignition energy. This paper describes a MEMS short-circuit fuse based on electro-thermal theory, it has similar volume with MEMS pyrotechnics devices, and the energy required is less than the traditional shorts fuse. This short-circuit fuse h

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15

白富升, 白富升, 吳庭維 Fu-Sheng Pai та 蔡佳霖 Tin-Wei Wu. "利用二次諧波電壓偵測之永磁同步馬達匝間短路分析". 理工研究國際期刊 12, № 1 (2022): 025–35. http://dx.doi.org/10.53106/222344892022041201003.

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<p>本文研究提出一馬達繞組匝間短路故障偵測之方法，所提方法是以馬達磁場導向控制器訊號為基礎，計算其驅動電壓頻譜，並找出馬達繞組匝間短路事故發生時會伴隨故障產生的二次諧波電壓特徵作為故障程度檢測之指標。本文已完成理論分析，並利用 Matlab/Simulink 對故障特徵進行實時模擬驗證，驗證結果顯示所提方法具相當之故障檢測準確性。</p> <p>&nbsp;</p><p>This paper proposes a detection method of inter-turn short circuit faults for a Permanent Magnet Synchronous Motor (PMSM). Based on the Field-Oriented Control (FOC) signal, the proposed method analyzes the motor-driving voltage spectrum and finds that the second-order harmonic component of motor-driving voltage can be used as an index to quantify the degree of inter-turn shor

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16

Davenport, R. J. "Short Circuit, Long Life." Science of Aging Knowledge Environment 2005, no. 7 (2005): nf14. http://dx.doi.org/10.1126/sageke.2005.7.nf14.

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17

Ulanov, Ann, and Barry Ulanov. "The short-circuit syndrome." Journal of Religion and Health 34, no. 4 (1995): 275–76. http://dx.doi.org/10.1007/bf02248736.

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18

Pedersen, K. O. H., A. H. Nielsen, and N. K. Poulsen. "Short-circuit impedance measurement." IEE Proceedings - Generation, Transmission and Distribution 150, no. 2 (2003): 169. http://dx.doi.org/10.1049/ip-gtd:20030193.

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19

Rainin, V., and A. Kobozev. "IMPROVING THE RELIABILITY OF PROTECTION AGAINST SHORT-CIRCUIT CURRENTS BY ELIMINATING INTERFERENCE IN THE FORM OF STARTING CURRENTS OF ELECTRIC MOTORS." Sciences of Europe, no. 121 (July 24, 2023): 37–40. https://doi.org/10.5281/zenodo.8176714.

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The problem of increasing the reliability of protecting low-voltage electrical networks from short-circuit currents by creating a new function in the releases of automatic switches - blocking protection when starting electric motors is considered. Identification of the starting mode is based on the use of the properties of the power function of the electrical circuit - the time dependence of the sum of the squares of the instantaneous values of the currents of the three-phase circuit. This makes it possible to reliably (in parallel by two methods) determine the value cos of the mode of the pr

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20

Kriston, Akos, Christian Bonato, and Andreas Pfrang. "New Method for Designing Robust External Short-Circuit Protection Systems at Different Scales." ECS Meeting Abstracts MA2023-02, no. 3 (2023): 464. http://dx.doi.org/10.1149/ma2023-023464mtgabs.

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External short circuit is one of the failure modes of Li-ion and other batteries that potentially leads to serious damage such as, overheating and/or thermal runaway. Therefore in this work we test and analyse the short circuit behaviour of different system sizes from coin cells, 10Ah pouch cells and upto large scale automotive high voltage battery packs. It was found that the complex short circuit behavior can be described by 3 regions independently of the size of the battery. In the first region 274C-rate is observed which is mainly governed by the cell's double and diffusion layer discharge

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21

Mishin, V. M., Z. Pu, V. V. Mishin, and S. B. Lunyushkin. "Short-circuit in the magnetosphere-ionosphere electric circuit." Geomagnetism and Aeronomy 53, no. 6 (2013): 809–11. http://dx.doi.org/10.1134/s001679321306008x.

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22

Wang, Mengjiao, Xinlao Wei, and Zhihang Zhao. "Short-Circuit Fault Current Parameter Prediction Method Based on Ultra-Short-Time Data Window." Energies 15, no. 23 (2022): 8861. http://dx.doi.org/10.3390/en15238861.

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The prediction of short-circuit current parameters is essential for the adoption of short-circuit fault limiting techniques and the reliable cut-off of circuit breakers. In order to quickly and accurately predict the short-circuit current waveform parameters, a short-circuit fault current prediction method based on ultra-short-time data windows (UDWs) is proposed. First, a mathematical model for describing short-circuit faults is constructed and the characteristics of short-circuit currents are analyzed. Then, the principle of the UDW method for predicting short-circuit current waveform parame

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23

Hyon, Byong Jo, Dae Yeon Hwang, Pooreum Jang, Yong-Su Noh, and Jin-Hong Kim. "Offline Fault Diagnosis for 2-Level Inverter: Short-Circuit and Open-Circuit Detection." Electronics 13, no. 9 (2024): 1672. http://dx.doi.org/10.3390/electronics13091672.

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Fault detection is very important to improve the reliability of power conversion devices. Faults of power semiconductors can be broadly divided into shorts and opens and are further classified into two types depending on whether there is an internal problem with the switch or anti-parallel diode. In this paper, fault-diagnosis methods for short-circuit and open-circuit states are proposed, respectively. A method of classifying and diagnosing faults by applying a gate signal to each switch is proposed to diagnose short-circuit conditions. This method uses only current magnitude information, whi

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24

Pobihailo, V. A. "SHORT CIRCUIT CURRENT LIMIT CONTROL." Systems and Technologies, no. 2(56) (2018): 96–103. http://dx.doi.org/10.32836/2521-6643-2018.2-56.7.

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25

Nowaczyk, Marc M., and Nicolas Plumeré. "Short circuit at the chlorophyll." Nature Chemical Biology 12, no. 12 (2016): 990–91. http://dx.doi.org/10.1038/nchembio.2240.

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26

Skindrud, E. "Short Circuit Severed Satellite Tether." Science News 149, no. 24 (1996): 374. http://dx.doi.org/10.2307/3979599.

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27

Castino, G. "Protecting IGBTs Against Short Circuit." EPE Journal 1, no. 2 (1991): 125–31. http://dx.doi.org/10.1080/09398368.1991.11463270.

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28

Zhang, Mingxuan, Minggao Ouyang, Languang Lu, et al. "Battery Internal Short Circuit Detection." ECS Transactions 77, no. 11 (2017): 217–23. http://dx.doi.org/10.1149/07711.0217ecst.

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29

Wood, Robert H., and Gilbert A. Mcgoldrick. "Busway Short Circuit Testing Procedures." IEEE Transactions on Industry Applications IA-21, no. 4 (1985): 873–75. http://dx.doi.org/10.1109/tia.1985.349534.

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30

Williams, P. I., R. G. Faulkner, L. W. Pinder, and D. J. Lees. "Short circuit diffusion-assisted corrosion." Corrosion Science 27, no. 6 (1987): 615–30. http://dx.doi.org/10.1016/0010-938x(87)90034-5.

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31

Shoji, Tomoyuki, Makoto Kuwahara, and Masanori Usui. "Dependence of Short-Circuit Withstand Capability of SiC MOSFETs on Short-Circuit Failure Time." IEEE Transactions on Power Electronics 36, no. 10 (2021): 11739–47. http://dx.doi.org/10.1109/tpel.2021.3073991.

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32

Qi, Yuan, Emine Bostanci, Vigneshwaran Gurusamy, and Bilal Akin. "A Comprehensive Analysis of Short-Circuit Current Behavior in PMSM Interturn Short-Circuit Faults." IEEE Transactions on Power Electronics 33, no. 12 (2018): 10784–93. http://dx.doi.org/10.1109/tpel.2018.2809668.

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33

THAKRE, AVANTI, and PARESH NASIKKAR. "Extraction of Photovoltaic Module Parameters from Outdoor and Converting into Standard Test Conditions." International Journal of Renewable Energy and Environmental Engineering 5, no. 1 (2017): 24–27. https://doi.org/10.5281/zenodo.1117445.

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Photovoltaic (PV) technology turns to be an evolving technique worldwide. This paper describes the technique used to extract the photovoltaic module characteristics from the outdoors and then converting it to Standard Test Conditions (STC). By applying this technique, the required electrical parameters such as fill factor, maximum power, short circuit current, open circuit voltage, efficiency for the polycrystalline module are determined under the outdoor test conditions. An electronically varying load has been used to trace the current voltage characteristics of PV module. Current and voltage

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34

Bakhadirkhanov, M., X. Iliev, M. Tursunov, and Sh. Karshiyev. "INTERACTION OF NIKEL ATOMS WITH GROUP VI IMPURITIES IN THE SILICON LATTICE." POLISH JOURNAL OF SCIENCE, no. 52 (July 13, 2022): 52–54. https://doi.org/10.5281/zenodo.6825887.

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The results of the study of silicon alloyed with Ni and Se atoms are given. The introduction of nickel was carried out by dusting the silicon surface and then by “low temperature” diffusion for 0.5 h at T = 1150˚C. Additional heat treatment of Ni and Se alloyed samples was performed in the same way (T = 820˚C, for 0.5 hours). The composition of the samples was studied using SEM. The change in the properties of Si is explained by the formation of binary complexes of nickel and selenium atoms in the crystal lattice of silicon.

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35

Bi, Chuang, Kelin Jia, and Hui Li. "Protection circuit for MOSEFT in the short circuit event." International Journal of Electronics Letters 5, no. 2 (2016): 233–37. http://dx.doi.org/10.1080/21681724.2016.1178336.

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36

Uemura, Yohei, Wen Zhang, Sayaka Morimoto, and Ryosuke Yagi. "Thermal and Electrical Simulations for Thermal Runaway Propagation in Lithium-Ion Battery Modules." ECS Meeting Abstracts MA2024-02, no. 5 (2024): 654. https://doi.org/10.1149/ma2024-025654mtgabs.

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In recent years, standards for evaluating thermal runaway (TR) propagation in battery systems have been developed following a series of fire accidents, such as those occurred in electric vehicles. Those standards require the safety of battery modules even if one of the component cells goes to TR. To predict module safety, simulation models for TR propagation have been actively researched. However, limited studies have focused on the short-circuit currents that occur during TR propagation between electrically connected parallel cells. In this study, we investigate the impact of short-circuit cu

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37

Debany, Warren H. "Coverage of Node Shorts Using Internal Access and Equivalence Classes." VLSI Design 1, no. 1 (1993): 71–85. http://dx.doi.org/10.1155/1993/42309.

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A method is presented that determines the coverage of shorts (bridging failures) in digital logic circuits by internal access test techniques. These are test techniques that provide observability of circuit nodes, such as CMOS power supply current monitoring (including IDDQ), CrossCheck, and voltage contrast. Only fault-free circuit simulation is used to obtain node states. Two versions of the algorithm are presented: a simple algorithm that is suitable for use with two-state logic (0 and 1), and a more general algorithm for four-state logic (0, 1, X, and Z). The result is a set of sets of nod

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38

Levitskaya, E. I., A. I. Lur’e, A. N. Panibratets, A. A. Sakovich, and L. M. Fomina. "The measurement of variations in short-circuit resistance upon transformer tests for short-circuit stability." Russian Electrical Engineering 84, no. 2 (2013): 65–73. http://dx.doi.org/10.3103/s1068371213020089.

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39

Gomes Guerreiro, Gabriel Miguel, Thanh Nguyen, Christopher Weldy, et al. "Development of Type IV WTG short circuit model and integration into commercial short circuit software." IET Conference Proceedings 2024, no. 16 (2025): 896–904. https://doi.org/10.1049/icp.2024.3892.

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40

Xu, Hui, and Zhong Dong Yin. "A New Method of Short-Current Limiting." Advanced Materials Research 945-949 (June 2014): 2846–49. http://dx.doi.org/10.4028/www.scientific.net/amr.945-949.2846.

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This research proposes a new parallel-type short-circuit current limit adjustment device. A unified power quality control strategy is provided to solve the typical issues of the power system. Meantime，when short-circuit fault occurs in the load side，short-circuit current can be limited to minimal range. The parallel-type short-circuit current limit adjustment device simulation model is established based on PSCAD/EMTDC simulation software. By doing some experiments on the parallel short-circuit current limit adjustment device, the correctness and validity of the proposed main circuit topology a

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41

N., F. M. Yasid, A. Alawady A., F. M. Yousof M., Al-Ameri S., and S. Kamarudin M. "Interpretation of sweep frequency response analysis traces on inter-turn short circuit fault." International Journal of Power Electronics and Drive System (IJPEDS) 11, no. 1 (2020): 309–16. https://doi.org/10.11591/ijpeds.v11.i1.pp309-316.

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Sweep frequency response analysis (SFRA) is a reliable method for detection and diagnosis of faults in the active part of transformers. However, although SFRA is widely employed, the interpretation of SFRA signature is still a challenge and require experts to analyse them. This is due to lack of guideline and standard for SFRA signature interpretation and clarification. This paper presents the interpretation of SFRA signature by classification and quantification on inter-turn short circuit fault on the transformer winding. The short-circuited turns fault on HV winding phase “A” was

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42

N., F. M. Yasid, A. Alawady A., F. M. Yousof M., A. Talib M., and S. Kamarudin M. "The Effect of short circuit fault in three-phase core-typed transformer." International Journal of Power Electronics and Drive System (IJPEDS) 11, no. 1 (2020): 409–16. https://doi.org/10.11591/ijpeds.v11.i1.pp409-416.

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Different techniques for monitoring the transformer condition are continuously discussed. This is due to the fact that transformers are one of the most expensive components in the power system network. Not to mention the cost to fix any failure occurred in the transformer that have becoming more expensive nowadays. Frequency response analysis (FRA) is found to be the best method to monitor the transformer reliability. This paper presents a continuation of study presented in previous paper [1]. The study performed a laboratory test to show that the response of a normal winding phase A can be af

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43

Mustafa, Manap, Nikolovski Srete, Skamyin Aleksandr, Karim Rony, Sutikno Tole, and Hatta Jopri Mohd. "An analysis of voltage source inverter switches fault classification using short time Fourier transform." International Journal of Power Electronics and Drive Systems (IJPEDS) 12, no. 4 (2021): 2209–20. https://doi.org/10.11591/ijpeds.v12.i4.pp2209-2220.

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The dependability of power electronics systems, such as three-phase inverters, is critical in a variety of applications. Different types of failures that occur in an inverter circuit might affect system operation and raise the entire cost of the manufacturing process. As a result, detecting and identifying inverter problems for such devices is critical in industry. This study presents the short-time Fourier transform (STFT) for fault classification and identification in three-phase type, voltage source inverter (VSI) switches. Time-frequency representation (TFR) represents the signal analysis

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44

Zhao, Tie Ying, and Yan Wen Wang. "Current Limiting Reactor's Reactance Value Selection Based on Short-Circuit Transient Analysis." Advanced Materials Research 722 (July 2013): 223–27. http://dx.doi.org/10.4028/www.scientific.net/amr.722.223.

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Current limiting reactor can increase systems short circuit impedance so as to limit short circuit current. Current limiting reactor is directly involved in whole short circuit process when a short circuit fault occurs in a power system, which makes short-circuit current change more complex. Short circuit current level is affected by current limiting reactors parameters; a current limiting reactor with proper impedance value can maintain short-circuit current at an acceptable range. A short circuit transient process of a distributing network with current limiting reactor was analyzed, and the

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45

Li, Xue Qing, Anup Bhalla, and Petre Alexandrov. "Short-Circuit Capability of SiC Cascode." Materials Science Forum 924 (June 2018): 871–74. http://dx.doi.org/10.4028/www.scientific.net/msf.924.871.

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This work investigates the short-circuit capability of SiC cascode by performing two-dimensional electro-thermal TCAD simulations. The effects of the threshold voltage of the SiC JFET on the cascode short-circuit withstand time are studied. A design trade-off between the JFET specific-on resistance and the cascode short-circuit withstand time is determined. The experimental results are also presented.

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46

Gu, LingYun, Yan Wu, Hui Yin, et al. "Simulation research on large capacity power supply technology suitable for distribution transformer short-circuit withstand capability test." Journal of Physics: Conference Series 2409, no. 1 (2022): 012018. http://dx.doi.org/10.1088/1742-6596/2409/1/012018.

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Abstract The existing transformer short-circuit test equipment and technology have several limitations. The purpose of short-circuit test is to simulate the test of high-voltage equipment under the short-circuit fault condition of the power system, usually, a large capacity test such as transformer burst short-circuit test, circuit breaker dynamic heat stability test, to verify the reliability and stability of related equipment under extreme working conditions. At present, the large capacity test generally uses methods of power grid dedicated line power supply and short-circuit testing alterna

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47

Wang, Jian, Xingzhi Liu, and Youchao Wu. "Design of short-circuit protection circuit for switching power supply." ITM Web of Conferences 45 (2022): 01043. http://dx.doi.org/10.1051/itmconf/20224501043.

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Short-circuit protection circuit for switching power supply is designed. The circuit is for sampling and protection based on capacitance ripple characteristics. It has the advantages of rapid fault protection adjustable trigger time and recovery time. It shows that the circuit scheme has a good protective effect on the power converter in various load environments, and it has reached desired effect, according to the simulation results and the circuit application results.

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48

Gregory, G. D. "Single-pole short-circuit interruption of molded-case circuit breakers." IEEE Transactions on Industry Applications 35, no. 6 (1999): 1265–70. http://dx.doi.org/10.1109/28.806037.

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49

Cao, Wei, Yong Sheng Wang, Bei Liu, and Wei Wang. "Analysis of Fault Recorder Data for Short-Circuit Current in a 500kV Busbar Short-Circuit Accident." Advanced Materials Research 383-390 (November 2011): 1290–94. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1290.

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The three-phase short-circuit fault of the 500 kV busbar of Waigaoqiao No.2 Power Plant was described, and the fault recorder data was analyzed for short-circuit current. The RMS of short-circuit current decaying fundamental frequency component, DC component and the attenuation time constant was obtained by Fourier transform, extrapolating with the exponential function. Finally, Corresponding suggestions for grid operation and management were also proposed.

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50

Liu, Li, Bo Pang, Siqiao Li, Yulu Zhen, and Gangpeng Li. "Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes." Micromachines 16, no. 7 (2025): 768. https://doi.org/10.3390/mi16070768.

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This paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the short-circuit capability of the devices under different electrical stresses through the short-circuit withstanding time (SCWT). Notably, the asymmetric trench structure exhibited a superior short-circuit capability under identical test conditions, achieving a longer SCWT compared to its symmetrical counterpart. Moreover, TCAD was used to mod

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