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Relevant bibliographies by topics / Short circuit

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Academic literature on the topic 'Short circuit'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 July 2024

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Journal articles on the topic "Short circuit"

1

Lawrentschuk, Nathan, and Paul A. Kearns. "Short circuit." Medical Journal of Australia 181, no. 11-12 (December 2004): 634. http://dx.doi.org/10.5694/j.1326-5377.2004.tb06496.x.

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Ghosh. "Short Circuit." Cultural Critique 108 (2020): 200. http://dx.doi.org/10.5749/culturalcritique.108.2020.0200.

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Fortner, Brian. "Short Circuit." Civil Engineering Magazine Archive 76, no. 12 (December 2006): 46–53. http://dx.doi.org/10.1061/ciegag.0000101.

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Ridgway, Andy. "Short circuit." New Scientist 228, no. 3044 (October 2015): 38–41. http://dx.doi.org/10.1016/s0262-4079(15)31468-8.

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Ghosh, Bishnupriya. "Short Circuit." Cultural Critique 108, no. 1 (2020): 200–208. http://dx.doi.org/10.1353/cul.2020.0027.

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Samura, Kazuhiro, Yasushi Miyagi, Tsuyoshi Okamoto, Takehito Hayami, Junji Kishimoto, Mitsuo Katano, and Kazufumi Kamikaseda. "Short circuit in deep brain stimulation." Journal of Neurosurgery 117, no. 5 (November 2012): 955–61. http://dx.doi.org/10.3171/2012.8.jns112073.

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Object The authors undertook this study to investigate the incidence, cause, and clinical influence of short circuits in patients treated with deep brain stimulation (DBS). Methods After the incidental identification of a short circuit during routine follow-up, the authors initiated a policy at their institution of routinely evaluating both therapeutic impedance and system impendence at every outpatient DBS follow-up visit, irrespective of the presence of symptoms suggesting possible system malfunction. This study represents a report of their findings after 1 year of this policy. Results Implanted DBS leads exhibiting short circuits were identified in 7 patients (8.9% of the patients seen for outpatient follow-up examinations during the 12-month study period). The mean duration from DBS lead implantation to the discovery of the short circuit was 64.7 months. The symptoms revealing short circuits included the wearing off of therapeutic effect, apraxia of eyelid opening, or dysarthria in 6 patients with Parkinson disease (PD), and dystonia deterioration in 1 patient with generalized dystonia. All DBS leads with short circuits had been anchored to the cranium using titanium miniplates. Altering electrode settings resulted in clinical improvement in the 2 PD cases in which patients had specific symptoms of short circuits (2.5%) but not in the other 4 cases. The patient with dystonia underwent repositioning and replacement of a lead because the previous lead was located too anteriorly, but did not experience symptom improvement. Conclusions In contrast to the sudden loss of clinical efficacy of DBS caused by an open circuit, short circuits may arise due to a gradual decrease in impedance, causing the insidious development of neurological symptoms via limited or extended potential fields as well as shortened battery longevity. The incidence of short circuits in DBS may be higher than previously thought, especially in cases in which DBS leads are anchored with miniplates. The circuit impedance of DBS should be routinely checked, even after a long history of DBS therapy, especially in cases of miniplate anchoring.

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Kim, Chul-Min, Hyun-Soo Yoon, Jong-Soo Kim, and Nam-Joon Kim. "Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors." Electronics 13, no. 7 (March 25, 2024): 1203. http://dx.doi.org/10.3390/electronics13071203.

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This paper presents a circuit for detecting and protecting against short circuits in E-mode gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection performance of the circuit. GaN HEMTs possess fast switching characteristics that enable high efficiency and power density in power conversion devices. However, these characteristics also pose challenges in protecting against short circuits and overcurrent situations. The proposed method detects short-circuit events by monitoring an instantaneous drop in the DC bus voltage of a circuit with GaN HEMTs applied and uses a bandpass filter to prevent the malfunction of the short-circuit protection circuit during normal switching and ensure highly reliable operation. Using this method, the short-circuit detection time of E-mode GaN HEMTs can be reduced to 257 ns, successfully protecting the device without malfunctions even in severe short-circuit situations occurring at high DC link voltages.

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Aymami, J., B. Dulieu, R. Hahn, and R. Haug. "MIG short-circuit welding: on the short circuit duration." Journal of Physics D: Applied Physics 19, no. 8 (August 14, 1986): L157—L159. http://dx.doi.org/10.1088/0022-3727/19/8/003.

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Yang, Sheng, Wenwei Wang, Cheng Lin, Weixiang Shen, and Yiding Li. "Investigation of Internal Short Circuits of Lithium-Ion Batteries under Mechanical Abusive Conditions." Energies 12, no. 10 (May 17, 2019): 1885. http://dx.doi.org/10.3390/en12101885.

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Current studies on the mechanical abuse of lithium-ion batteries usually focus on the mechanical damage process of batteries inside a jelly roll. In contrast, this paper investigates the internal short circuits inside batteries. Experimental results of voltage and temperature responses of lithium-ion batteries showed that battery internal short circuits evolve from a soft internal short circuit to a hard internal short circuit, as battery deformation continues. We utilized an improved coupled electrochemical-electric-thermal model to further analyze the battery thermal responses under different conditions of internal short circuit. Experimental and simulation results indicated that the state of charge of Li-ion batteries is a critical factor in determining the intensities of the soft short-circuit response and hard short-circuit response, especially when the resistance of the internal short circuit decreases to a substantially low level. Simulation results further revealed that the material properties of the short circuit object have a significant impact on the thermal responses and that an appropriate increase in the adhesion strength between the aluminum current collector and the positive electrode can improve battery safety under mechanical abusive conditions.

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Tarko, Rafał, Jakub Gajdzica, Wiesław Nowak, and Waldemar Szpyra. "Comparative Analysis of High-Voltage Power Line Models for Determining Short-Circuit Currents in Towers Earthing Systems." Energies 14, no. 16 (August 4, 2021): 4729. http://dx.doi.org/10.3390/en14164729.

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The article deals with the problems of single-phase short-circuit current distribution in overhead power lines. Short-circuit disturbances cause many negative phenomena in power networks. Since experimental studies of short-circuits in real networks are practically impossible to perform, these effects can be evaluated only theoretically, based on short-circuit current calculations with the use of appropriate mathematical models. Although short-circuit modeling is considered to be one of the simplest power system calculations, the exact mathematical description of the phenomena occurring at short-circuits is complex. Simplified normative methods are often used for short-circuit current calculations; however, this does not give ground for a thorough analysis of short-circuit current distribution in power lines. The distributions are analyzed using power line models with different degrees of complexity in line with the assumptions made for a given model. The paper presents the problem of current distribution analysis in high-voltage overhead lines for single-phase faults to the tower structures. Simulation studies were conducted on the models developed for the calculation of short-circuit currents in the high-voltage power line earthing. The objective of the analysis was to assess the validity of simplification assumptions followed by practical recommendations on the applicability of the models.

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Dissertations / Theses on the topic "Short circuit"

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Aaen, Peter H. "Short printed-circuit couplers and vias." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp01/MQ29400.pdf.

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Shimmin, D. W. "High power short circuit studies on an SF6 puffer circuit breaker." Thesis, University of Liverpool, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383473.

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Singh, D. "Integrated circuit elements for short millimeter wavelengths." Thesis, Cardiff University, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372354.

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Barazi, Yazan. "Fast short-circuit protection for SiC MOSFETs in extreme short-circuit conditions by integrated functions in CMOS-ASIC technology." Thesis, Toulouse, INPT, 2020. http://www.theses.fr/2020INPT0091.

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Les transistors de puissance grands gaps tels que les MOSFETs SiC et HEMT GaN repoussent les compromis classiques en électronique de puissance. Brièvement, des gains significatifs ont été démontrés par les transistors SiC et GaN: meilleurs rendements, couplés à une augmentation des densités de puissance offertes par la montée en fréquence de découpage. Les MOSFET SiC à haute tension présentent des spécificités telles qu'une faible tenue en court-circuit (SC) par rapport aux IGBT Si et un oxyde de grille aminci, et une tension de commande rapprochée grillesource élevée. La polarisation négative sur la grille à l'état bloqué crée un stress supplémentaire qui réduit la fiabilité du MOSFET SiC. La forte polarisation positive de la grille provoque un courant de saturation de drain important en cas de SC. Ainsi, cette technologie fait émerger des besoins spécifiques de surveillance et de protection ultra-rapides. Pour cela, le travail de cette thèse se focalise sur deux études pour surmonter ces contraintes toute en gardant un bon compromis de performances entre « niveau d’intégration technologique ‘CMS/ASIC-CMOS’–rapidité–robustesse ». La première, regroupe un ensemble de solutions nouvelles permettant une détection du courtcircuit sur le cycle de commutation, sur la base d'une architecture conventionnelle de commande rapprochée dite à 2 niveaux de tension. La deuxième étude est plus exploratoire et basée sur une nouvelle architecture de gate–driver, dite multi-niveaux, à faible niveau de stress pour le MOSFET SiC tout en maintenant les performances dynamiques. Les travaux portent tout d’abord sur l’environnement du SiC MOSFET, (caractérisation et propriétés de comportement en SC par simulations orientées "circuit" de type PLECS™ et LTSpice™), puis présentent une étude bibliographique sur les commandes rapprochées dites Gate Driver, une étude approfondie a été réalisée sur les court-circuits type I & II (Hard switch fault) (Fault under Load) ; regroupés dans un premier chapitre du manuscrit. Un banc de test réalisé antérieurement au sein du laboratoire, a permis de compléter et de valider l’étude d'analyse-simulation et de préparer des stimuli test pour l'étape de conception des nouvelles solutions. Inspirée par la méthode de Gate charge apparue pour les IGBTs en silicium et évoquée pour les MOSFETs SiC, cette première approche fait l'objet d'un travail de conception, de dimensionnement et de prototypage. Cette méthode de référence permet une détection de type HSF en moins de 200ns sous 0-600V avec des composants 1,2kV allant de 80 mOhm à 120mOhm. S'agissant des nouvelles méthodes de détection rapides et intégrées, les travaux de cette thèse se focalisent particulièrement sur la conception d’un circuit ASIC CMOS. Pour cela, la conception d’un gate driver adapté est essentiel. Un ASIC est conçu en technologie X-Fab XT-0,18μm SOICMOS sous Cadence™, et puis mis en boitier et assemblé sur PCB conçu pour les besoins de tests et adaptable au banc principal. La conception du gate driver a considéré de nombreuses fonctions (détection du SC, SSD Soft shut down, buffer segmenté, AMC Active Miller Clamp", …). Du point de vue de la détection du SC, les fonctions nouvelles de surveillance intégrées concernent la méthode de dérivation temporelle de VGS qui est basée sur une détection par un circuit dérivateur analogique RC sur la séquence de plateau avec deux variantes. Une deuxième méthode nouvelle partiellement intégrée dans l'ASIC a été conçu, non développé dans ce mémoire dans le but d’une valorisation. En marge de cette étude principale, une étude exploratoire a porté sur une nouvelle architecture modulaire de commande rapprochée à plusieurs niveaux de tension de polarisation tirant profit de l'isolation SOI et des transistors CMOS à basse tension pour piloter le MOSFETs SiC et améliorer leur fiabilité grâce à une sélection active et dynamique à plusieurs niveaux sur les séquences de commutation et les états marche/arrêt
Wide bandgap power transistors such as SiC MOSFETs and HEMTs GaN push furthermore the classical compromises in power electronics. Briefly, significant gains have been demonstrated: better efficiency, coupled with an increase in power densities offered by the increase in switching frequency. HV SiC MOSFETs have specific features such as a low short-circuit SC withstand time capability compared to Si IGBTs and thinner gate oxide, and a high gate-to-source switching control voltage. The negative bias on the gate at the off-state creates additional stress which reduces the reliability of the SiC MOSFET. The high positive bias on the gate causes a large drain saturation current in the event of a SC. Thus, this technology gives rise to specific needs for ultrafast monitoring and protection. For this reason, the work of this thesis focuses on two studies to overcome these constraints, with the objective of reaching a good performance compromise between “CMS/ASIC-CMOS technological integration level-speed–robustness”. The first one, gathers a set of new solutions allowing a detection of the SC on the switching cycle, based on a conventional switch control architecture with two voltage levels. The second study is more exploratory and is based on a new gate-driver architecture, called multi-level, with low stress level for the SiC MOSFET while maintaining dynamic performances. The manuscript covers firstly the SiC MOSFET environment, (characterization and properties of SC behavior by simulation using PLECS and LTSpice software) and covers secondly a bibliographical study on the Gate drivers. And last, an in-depth study was carried out on SC type I & II (hard switch fault) (Fault under Load) and their respective detection circuits. A test bench, previously carried out in the laboratory, was used to complete and validate the analysis-simulation study and to prepare test stimuli for the design stage of new solutions. Inspired by the Gate charge method that appeared for Si IGBTs and evoked for SiC MOSFETs, this method has therefore been the subject of design, dimensioning and prototyping work, as a reference. This reference allows an HSF type detection in less than 200ns under 400V with 1.2kV components ranging from 80 to 120mOhm. Regarding new rapid and integrated detection methods, the work of this thesis focuses particularly on the design of a CMOS ASIC circuit. For this, the design of an adapted gate driver is essential. An ASIC is designed in X-Fab XT-0.18 SOICMOS technology under Cadence, and then packaged and assembled on a PCB. The PCB is designed for test needs and adaptable to the main bench. The design of the gate driver considered many functions (SC detection, SSD, segmented buffer, an "AMC", ...). From the SC detection point of view, the new integrated monitoring functions concern the VGS time derivative method which is based on a detection by an RC analog shunt circuit on the plateau sequence with two approaches: the first approach is based on a dip detection, i.e. the presence or not of the Miller plateau. The second approach is based on slope detection, i.e. the variability of the input capacitance of the power transistor under SC-HSF compared to normal operation. These methods are compared in the third chapter of the thesis, and demonstrate fault detection times between 40ns and 80ns, and preliminary robustness studies and critical cases are presented. A second new method is partially integrated in the ASIC, was designed. This method is not developed in the manuscript for valorization purposes. In addition to the main study, an exploratory study has focused on a modular architecture for close control at several bias voltage levels taking advantage of SOI isolation and low voltage CMOS transistors to drive SiC MOSFETs and improve their reliability through active and dynamic multi-level selection of switching sequences and on/off states

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Howard, Dustin F. "Short-circuit currents in wind-turbine generator networks." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50361.

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Protection of both the wind plant and the interconnecting transmission system during short-circuit faults is imperative for maintaining system structural integrity and reliability. The circuit breakers and protective relays used to protect the power system during such events are designed based upon calculations of the current that will flow in the circuit during the fault. Sequence-network models of various power-system components, such as synchronous generators, transformers, transmission lines, etc., are often used to perform these calculations. However, there are no such models widely accepted for certain types of wind-turbine generators used in modern wind plants. The problem with developing sequence-network models of wind plants is that several different wind-turbine generator designs exist; yet, each exhibit very different short-circuit behavior. Therefore, a “one size fits all” approach is not appropriate for modeling wind plants, as has been the case for conventional power plants based on synchronous-generator technology. Further, many of the newer wind-turbine designs contain proprietary controls that affect the short-circuit behavior, and wind-turbine manufacturers are often not willing to disclose these controls. Thus, protection engineers do not have a standard or other well-established model for calculating short-circuit currents in power systems with wind plants. Therefore, the research described in this dissertation involves the development of such models for calculating short-circuit currents from wind-turbine generators. The focus of this dissertation is on the four existing wind-turbine generator designs (identified as Types 1 – 4). Only AC-transmission-interconnected wind-turbine generators are considered in this dissertation. The primary objective of this research is the development of sequence-network models, which are frequency-domain analysis tools, for each wind-turbine generator design. The time-domain behavior of each wind-turbine generator is thoroughly analyzed through transient simulations, experimental tests on scaled wind-turbine generator test beds, and solutions to the system dynamic equations. These time-domain analyses are used to support the development of the sequence-network models.

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Amin, M. Shahrooz 1981. "Advanced Faraday cage measurements of charge, short-circuit current and open-circuit voltage." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/28730.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
"Spetember 2004."
Includes bibliographical references.
(cont.) above atmospheric pressure caused both positive current and negative current pulses with the negative pulse larger than the positive pulse. A pressure decrease of more than 10psi below atmospheric pressure also caused both positive current and negative current pulses with the positive current larger than the negative current pulse. Experiments showed that the negative current was generated by the galvanic action between the two dissimilar metals in the triaxial connector connecting the center electrode of the electrode chamber with the electrometer, as water condensed. Positive current could have been produced by the evaporation of moisture from the center electrode of the electrode chamber. Dew point analysis is performed to show that for water to condense on metallic surfaces, it is not necessary to reach the dew point. The calculated dew point temperature is lower than the temperature at which the water condenses upon the electrode surfaces. In the liquid and solid dielectric experiments, we use a patented Faraday cage which is composed of two identical in-line hollow, gold-plated Faraday cup electrodes that enclose the samples which move between them during each measurement under computer control. We conducted charge measurements using various electrometers to rule out the possibility of false instrument readings due to input offset voltage and other experimental effects. One wire mesh style of Faraday cage connected with an electrometer was also used to measure the charge. The liquid dielectrics are distilled water, tap water, Sargasso Sea water ...
This thesis is devoted to Faraday cage measurements of air, liquid, and solid dielectrics. Experiments use pressurized air with fixed Faraday cage electrodes, and a moving sample of liquid and solid dielectrics between two Faraday cup electrodes. Extensive experiments were conducted to understand the source of the unpredictable net measured charge. In the air experiment, the Faraday cage consists of a hollow, cylindrical, gold-plated brass electrode mounted within a gold-plated brass hermetic chamber that connects with earth ground. Measurements of transient current at various temperatures and humidity during transient air pressure change are presented. The flow of electrode current is shown not to be due to capacitance and input offset voltage changes, since the calculated value is on the order of 10⁻¹⁶ Amperes which is much less than the measured currents of order 10⁻¹³ Amperes. By controlling the internal relative humidity of air in the Faraday cage, and from the measurements of current using dry nitrogen, we confirm that the absence of moisture causes no current to flow. Amplitude of the measured current is found to be dependent upon the internal relative humidity. Repeatedly, polarity reversals were observed to occur, in part due to galvanic action between dissimilar metals as water condensed upon the insulating surface between them. At a low temperature with a small pressure change, only one pulse of current was observed to occur but, with a pressure change of more than l0psi, two opposite polarity pulses of current were shown to occur almost simultaneously. A small pressure increase only caused a pulse of negative current, and a small pressure decrease only caused a pulse of positive current. A pressure increase of more than l0psi
by M. Shahrooz Amin.
S.M.

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Jeffery, Peter Andrew. "The motion of short circuit arcs in low-voltage current limiting miniature circuit breakers." Thesis, University of Southampton, 1999. https://eprints.soton.ac.uk/47620/.

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Investigations have been made into the effect of the Miniature Circuit Breaker configuration on the behaviour of short circuit arcs. A Flexible Test Apparatus was developed to recreate the operation of a MCB, igniting the arc between opening contacts. The short circuit fault was simulated using a capacitor discharge system, with a prospective peak current of 3.5 kA. A high-speed digital Arc Imaging System was used to record the arc behaviour. Analysis techniques have been developed that plot the individual trajectories of the anode and cathode root from the digital data. The time that each arc root remains in the contact region can be deduced and is defined as the arc root contact time. It is shown that the traditional arc voltage to measure arc contact times is not accurate. In the Arc Contact Time Investigation the contact material, contact geometry, arc runner configuration were varied. At 3m/s contact velocity silver graphite contacts and step geometry led to longer cathode root contact times. Cathode root motion was prevented by a corner on the arc runner. The polarity of connection affected the arc movement away from the contact region. Increasing the contact velocity reduced cathode root contact times, but did not guarantee arc movement away from the contact region. The Taguchi Method was applied to the Arc Behaviour Investigation. The contact material, contact geometry, arc chamber geometry, arc chamber material and arc chamber venting were varied. Tests were carried out at lOm/s contact velocity. The cathode root contact time, anode root contact times and let through energy were calculated. The arc voltage and current, arc root trajectory plots and selected arc images are presented. The cathode and anode root contact times were independent. Generally, the cathode root moved away from the contact region before the anode root. Lower let-though energies were recorded for open arc chamber vents. The arc failed to move from the contact region, when silver graphite contacts were used in combination with acrylic arc chamber, copper arc runners and choked arc chamber vents. The mobility of the arc is dominated by the cathode root, and can only run at high velocity if the electrode surface conditions promote oxide layer type emission. The arc is drawn between the contacts with metal vapour type emission dominating and is initially limited to low velocity. During the arc contact time the arc root interaction effects damage the oxide layer on the surrounding conductor surface. As the arc column length increases, deflection of the arc column by the self-blast magnetic field may cause a discontinuous jump, after which the arc may run at high velocity. Increasing the contact velocity and steel arc runner backing strips encourage a discontinuous jump away from the contact region. Deposition on the arc runner of silver and carbon discourages both discontinuous jumps and high velocity motion. Changes in geometry, restricting the arc chamber venting and the anode root commutation can reduce the cathode root velocity. When this occurs, the arc root interaction effects damage the oxide layer, and cause the arc to revert to metal vapour type emission. Additionally, the surface of the acrylic arc chamber is carbonised during prolonged arc contact times. The partial conducting path through the carbonised material further encourages the arc to remain in the contact region.

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Kopta, Arnost [Verfasser]. "Short-Circuit Ruggedness of High-Voltage IGBTs / Arnost Kopta." Aachen : Shaker, 2010. http://d-nb.info/1081885610/34.

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Crumlin, Alex Justin. "Methods for short-circuit identification and location in automobiles." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/36777.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
"June 2006."
Includes bibliographical references (leaf 133).
As the number of electrical components in cars increases at a rapid rate, so too does the chance for electrical failure. A method for locating shorts to the chassis of a car is developed in this thesis. The developed technique is capable of detecting the approximate location of current being injected into the body of the car using several sensors placed strategically throughout the car. This technique can then be used in the manufacturing process and in the field where it can notify the operator of any short-circuit related problems in their car.
by Alex Justin Crumlin.
M.Eng.

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Prashad, F. R. "Improved reduced-order models of solid-rotor synchronous machines derived from frequency-response." Thesis, University of Newcastle Upon Tyne, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234431.

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Books on the topic "Short circuit"

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Campello, Ricardo Urquizas. Short Circuit. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21859-0.

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ill, Birdsong Keith, and Copyright Paperback Collection (Library of Congress), eds. Short circuit. Los Angeles, Calif: Price Stern Sloan, 1990.

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Litowinsky, Olga. Short circuit. Austin, TX: Steck-Vaughn Co., 1995.

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Zucker, Jonny. Short circuit. London: Stripes, 2009.

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Vanessa, Bates, ed. Short circuit. Strawberry Hills, NSW: Currency Press, 2009.

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Vanessa, Bates, ed. Short circuit. Strawberry Hills, NSW: Currency Press, 2009.

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Schlabbach, J. Short circuit currents. London: Institution of Electrical Engineers, 2005.

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editor, Baur Andreas, and Galerie der Stadt Esslingen, eds. Melanie Smith: Short circuit. Köln: Snoeck, 2013.

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US Army Engineering and Housing Support Center, ed. Short circuit and protection coordination. Fort Belvoir, VA: US Army Engineering and Housing Support Center, 1989.

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Richard, Roeper. Short-circuit currents in three-phasesystems. 2nd ed. Berlin: Siemens, 1985.

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Book chapters on the topic "Short circuit"

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Campello, Ricardo Urquizas. "Short Circuit." In Short Circuit, 17–45. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21859-0_2.

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Campello, Ricardo Urquizas. "Introduction." In Short Circuit, 1–16. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21859-0_1.

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Campello, Ricardo Urquizas. "Out of Control." In Short Circuit, 123–36. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21859-0_6.

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Campello, Ricardo Urquizas. "Lines of Emergence." In Short Circuit, 47–70. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21859-0_3.

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Campello, Ricardo Urquizas. "Diagrammatic Compositions." In Short Circuit, 71–96. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21859-0_4.

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Campello, Ricardo Urquizas. "Converging Enunciations." In Short Circuit, 97–121. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21859-0_5.

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Soman, S. A., S. A. Khaparde, and Shubha Pandit. "Short Circuit Analysis." In Computational Methods for Large Sparse Power Systems Analysis, 179–212. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0823-6_9.

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Paul, Aloke, Tomi Laurila, Vesa Vuorinen, and Sergiy V. Divinski. "Short-Circuit Diffusion." In Thermodynamics, Diffusion and the Kirkendall Effect in Solids, 429–91. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-07461-0_10.

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Zhu, Fang, and Baitun Yang. "Short-Circuit Obligation." In Power Transformer Design Practices, 167–97. First edition. | Boca Raton, FL: CRC Press/Taylor & Francis Group, LLC, 2021.: CRC Press, 2021. http://dx.doi.org/10.1201/9780367816865-9.

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Tuma, Tadej, and Árpád Bűrmen. "Short tutorial." In Circuit Simulation with SPICE OPUS, 37–88. Boston, MA: Birkhäuser Boston, 2009. http://dx.doi.org/10.1007/978-0-8176-4867-1_2.

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Conference papers on the topic "Short circuit"

1

Yan, Chenguang, Weixiang Wang, Peng Zhang, Zhangheng Liu, Jin Shu, and Baohui Zhang. "Coupled Field–Circuit Modeling and Analysis for Interturn Short-Circuit Faults in an Onboard Traction Transformer." In 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers). IEEE, 2023. http://dx.doi.org/10.1109/intermagshortpapers58606.2023.10228536.

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Luo, Xiaoxiao, Qianbo Xiao, Qian Wang, Wenyan Gan, Baojia Deng, and Zhiping Sheng. "Research on Short-Circuit Force of Transformer Winding with Single-Phase Short-Circuit and Three-Phase Short-Circuit." In 2021 11th International Conference on Power and Energy Systems (ICPES). IEEE, 2021. http://dx.doi.org/10.1109/icpes53652.2021.9683798.

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Mohan Rao, N. S. "Experience in Short Circuit Testing of LV Short Circuit Testing Transformer." In 2011 North American Power Symposium (NAPS 2011). IEEE, 2011. http://dx.doi.org/10.1109/naps.2011.6024849.

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Jung, Seung-Ho, Jong-Humn Baek, and Seok-Yoon Kim. "Short circuit power estimation of static CMOS circuits." In the 2001 conference. New York, New York, USA: ACM Press, 2001. http://dx.doi.org/10.1145/370155.370528.

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Afonso, Joao, and Jose Monteiro. "Analysis of short-circuit conditions in logic circuits." In 2017 Design, Automation & Test in Europe Conference & Exhibition (DATE). IEEE, 2017. http://dx.doi.org/10.23919/date.2017.7927102.

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Conka, Zsolt, Karel Maslo, and Branislav Batora. "Short circuit current calculations." In 2018 19th International Scientific Conference on Electric Power Engineering (EPE). IEEE, 2018. http://dx.doi.org/10.1109/epe.2018.8396040.

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Hemavathi, S., and Manohar Singh. "Microgrid Short Circuit Studies." In 2018 IEEE 8th Power India International Conference (PIICON). IEEE, 2018. http://dx.doi.org/10.1109/poweri.2018.8704389.

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Newfield, Jennifer, and Josh Staub. "How Short Circuit Experiments." In SIGGRAPH '20: Special Interest Group on Computer Graphics and Interactive Techniques Conference. New York, NY, USA: ACM, 2020. http://dx.doi.org/10.1145/3388767.3409267.

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Vorkunov, Oleg V., Lyubov A. Glotkina, and Alexey M. Sinicin. "Short-Circuit Current Limitation." In 2024 International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM). IEEE, 2024. http://dx.doi.org/10.1109/icieam60818.2024.10553691.

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Diaz, Nelson, Adriana Luna, and Oscar Duarte. "Improved MPPT short-circuit current method by a fuzzy short-circuit current estimator." In 2011 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2011. http://dx.doi.org/10.1109/ecce.2011.6063771.

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Reports on the topic "Short circuit"

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Yuri Shane. SHORT CIRCUIT CALCULATION (TEMPORARY POWER). Office of Scientific and Technical Information (OSTI), July 1995. http://dx.doi.org/10.2172/875323.

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CARRATT, R. T. SITE WIDE SHORT CIRCUIT STUDY ASSESSMENT. Office of Scientific and Technical Information (OSTI), February 2004. http://dx.doi.org/10.2172/821387.

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Karlson, Benjamin, and Joseph Williams. Wind power plant short-circuit modeling guide. Office of Scientific and Technical Information (OSTI), August 2012. http://dx.doi.org/10.2172/1051716.

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Paxton, Walter, and Ewa Ravenda. Battery Deactivation by Electrochemically-Generated Short-Circuit. Office of Scientific and Technical Information (OSTI), December 2018. http://dx.doi.org/10.2172/1528993.

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Pappas, G. Analysis of High Power IGBT Short Circuit Failures. Office of Scientific and Technical Information (OSTI), February 2005. http://dx.doi.org/10.2172/839770.

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Holder, Darryl. Prototype and Short-Run Printed Circuit Board Creation. Fort Belvoir, VA: Defense Technical Information Center, March 1993. http://dx.doi.org/10.21236/ada263245.

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Hughes K. B. F-10 HOUSE PHASE SHIFT TRANSFORMER SHORT CIRCUIT TESTS. Office of Scientific and Technical Information (OSTI), September 1988. http://dx.doi.org/10.2172/1151213.

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Chesser, Ian. An atomistic perspective on short-circuit diffusion in materials. Office of Scientific and Technical Information (OSTI), November 2023. http://dx.doi.org/10.2172/2208766.

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Masrur, M. A., ZhiHang Chen, and Yi L. Murphey. Intelligent Diagnosis of Open and Short Circuit Faults in Electric Drive Inverters For Real-Time Applications. Fort Belvoir, VA: Defense Technical Information Center, March 2009. http://dx.doi.org/10.21236/ada513126.

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TOWNE, C. M. SHORT CIRCUIT COORDINATION STUDY & ARC FLASH EVALUATION FOR LIQUID PROCESSING & CAPSULE STORAGE 310 FACILITY. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/821674.

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