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Journal articles on the topic 'Shottky-barrier'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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1

Irokawa, Yoshihiro, Encarnación A. García Víllora, and Kiyoshi Shimamura. "Shottky Barrier Diodes on AlN Free-Standing Substrates." Japanese Journal of Applied Physics 51 (March 26, 2012): 040206. http://dx.doi.org/10.1143/jjap.51.040206.

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2

Irokawa, Yoshihiro, Encarnación A. García Víllora, and Kiyoshi Shimamura. "Shottky Barrier Diodes on AlN Free-Standing Substrates." Japanese Journal of Applied Physics 51, no. 4R (April 1, 2012): 040206. http://dx.doi.org/10.7567/jjap.51.040206.

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3

Musaeva, S. N., E. A. Kerimov, N. F. Kazımov, and S. I. Huseynova. "Platinum Silicide-Silicon Schottky Diode Characteristics." Modern Electronic Technology 2, no. 2 (July 27, 2018): 41. http://dx.doi.org/10.26549/met.v2i2.850.

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Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.
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4

Давыдов, С. Ю. "О контакте двумерного переходного металла с графеноподобным соединением." Физика твердого тела 63, no. 6 (2021): 817. http://dx.doi.org/10.21883/ftt.2021.06.50945.009.

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Within the scope of the simple model analytical expressions for the charge transfer and the Shottky barrier height on the contact of two-dimensional d-metal with graphene-like ANB8-N compound are obtained. It is shown that 2D metal character can be taken into account by the d-band contraction. Using Gr – 2DM and hBN – 2DM systems as an example, it is demonstrated that the proposed approach gives the appropriate results.
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5

Petrova, M. "Melebaev D., Merdanov M., Myradova A. SHOTTKY BARRIER OPTICAL SPECTROMETER ON GRADED-GAP SEMICONDUCTORS." National Association of Scientists 1, no. 36(63) (February 15, 2021): 4–7. http://dx.doi.org/10.31618/nas.2413-5291.2021.1.63.357.

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В работе приводятся данные по видовому разнообразию селитебной микобиоты Республики Башкортостан. Изучение проводится с 2006г. по настоящее время. На сегодняшний день подробно изучена микобиота четырех городов – Стерлитамак, Салават, Ишимбай и Бирск. В работе представлена общая видовая насыщенность селитебной микобиоты республики. Приводится анализ общего систематического списка и общий обзор видового состава.
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6

Drouin, D., R. Gauvin, J. Beauvais, P. Hovington, and D. C. Joy. "Characterization of schottky depletion zone using EBIC imaging." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 152–53. http://dx.doi.org/10.1017/s0424820100163228.

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Scanning Electron Microscopy (SEM) has been widely used to characterize semiconductor materials. Approximately one half of all SEMs are used by the electronic industry. The SEM can be used as a local current source that can be scanned over semiconductor device surfaces. This imaging mode is called Electron Beam Induced Current (EBIC).A depletion zone formed by a Schottky diode is visualized using this technique. This Shottky diode is fabricated by placing a metal contact on a semiconductor surfaces. The work function of the metal and the semiconductor produce an equilibrium contact potential. This potential barrier occurs across a region free of charge carriers and thus an electric field is present. This region is called a depletion zone.
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7

SVISTUNOV, V. M., O. V. GRIGUT', A. I. DYACHENKO, and YU F. REVENKO. "EFFECT OF JOSEPHSON MEDIUM UNDER TUNNELING IN BI-SR-CA-CU-O." Modern Physics Letters B 06, no. 22 (September 20, 1992): 1391–96. http://dx.doi.org/10.1142/s0217984992001095.

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Tunneling characteristics of high-T c oxide superconductor Bi-Sr-Ca-Cu-O have been measured in the wide bias voltage and temperature range. Near zero bias voltage tunneling conductivity σ (U) is expressed by the U1/2 at low temperature, which goes to the linear one at U > 100 mV . Background conductivity metaloxide is determined by Shottky barrier on surface high-T c . It has been found that the peaks of σ (U) curves for low-ohmic contacts are well described theoretical model of destruction of superconductivity of the intergranular weak links. Parameters of these links are estimated. Zero bias anomaly conductivity peaks are explained by breakdown weak links with small critical current.
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8

EL-BANNA, M. "The switching characteristics of Shottky-barrier diodes under high-level injection with a non-zero field at the depletion layer edge." International Journal of Electronics 84, no. 5 (May 1998): 445–52. http://dx.doi.org/10.1080/002072198134553.

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9

MORALES-SÁNCHEZ, E., J. GONZÁLEZ-HERNÁNDEZ, R. RAMÍREZ-BON, F. ESPINOZA-BELTRÁN, Y. VOROBIEV, A. MORALES-ACEVEDO, PETRO GORLEY, Z. KOVALYUK, and PAUL HORLEY. "CdTe and Si SOLAR CELL PERFORMANCE COMPARISON IN A NEW SYSTEM FOR SOLAR ENERGY CONVERSION AND STORAGE." Modern Physics Letters B 15, no. 17n19 (August 20, 2001): 597–600. http://dx.doi.org/10.1142/s0217984901002087.

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A new system for the effective conversion and storage of solar energy using CdTe and Si based photovoltaic solar cells and the Li- Bi 2 Se 3 rechargable batteries was created and studied. PV Solar Cells with the different types of structure and barrier were studied (Shottky. MIS with thin insulating layer, and p-n junction), employing low-temperature and high-temperature technological cycles. The influence of the technological details upon the electrical parameters as well as the efficiency and stability of their performance were analyzed, and also the condition for improving the efficiency were found. In particular, it was established that Zn-doping of CdTe and the Al alloying to Si at 800°C have a profound effect upon the PV cell characteristics. The influence of the recombination in different parts of the cell upon the cell's efficiency and the recombination dependence upon the technological features were investigated. A comparison of the performance and fabrication cost of the new systems for solar energy conversion and storage with others using conventional cells and batteries is made. It is shown that newly developed systems could provide a global efficiency close to that for traditional ones, with simpler and cheaper technology. With some modifications of the technology, we expect to get even higher efficiencies and a wider system operation temperature range. The possibilities are discussed for the creation of a hybrid energy conversion system on the basis of our cells and batteries, with an overall efficiency of transformation of solar-to-electric energy around 40%.
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10

Wan, Jun Hua, Kai Huang, and Li Wan. "Shottky Contact Device Based on a Single WO3 Nanowire for Ultraviolet Photodetector." Applied Mechanics and Materials 556-562 (May 2014): 2097–100. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.2097.

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To distinguish the ultraviolet (UV) photoresponse of Ohmic and Schottky contact devices, we have fabricated symmetrical and nonsymmetrical devices by standard lithography based on a single WO3 nanowire. For the Ohmic contact device, the photocurrent can change from 100 nA to 300 nA. Even 200 s under UV illumination, nonsaturated photocurrent can be observed, and the fall time is more than 1000 s. But for the Schottky contact device, the rise and fall time are faster than that of Ohmic device. The barrier height of Schottky device can be easily controlled through the oxygen adsorption and desorption on the junction region, which can be served as a ‘‘gate’’ that effectively tunes the conductance of the device. Therefore, the Schottky barrier plays a very important role in the rapid-response of UV photodetector.
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11

Genelev, Andrey P., Alexey A. Levitsky, and Vladimir S. Zasemkov. "Field Emission Structure with Shottky-Barrier Electrode." MRS Proceedings 621 (2000). http://dx.doi.org/10.1557/proc-621-r5.6.1.

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ABSTRACTWe analyze a non-traditional version of semiconductor field emission structure, based on silicon cones arrays and destined for application in low-voltage vacuum microelectronics devices. In proposed construction, the gate electrode is used as Shottky-barrier contact on silicon tips. Due to Shottkybarrier contact we have obtained depletion layer in tip body under the gate electrode. Therefore variation of the gate electric potential provides the emitter current modulation. Experimental structures were fabricated with about 28000 silicon cones per 1 mm2 by reactive ion etching through a silica mask. Using a quasi two-dimensional model, we have computed these emitter structures. The model takes into account non-uniformity of silicon cone cross-section. Here, we study the influence of emitter tips parameters on the structure performance. Initial results prove the possibility of cathode current electric control with the gate electrode potential. Additionally we have obtained some other electric parameters of the emitter with the Shottky-barrier contact. The results of numerical analysis and experimental study provide a guide for design of proposed field emitter structure.
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12

Liu, Da-Ping, Xiao-Bo Li, Tao-Fei Pu, Liu-An Li, Shao-Heng Cheng, and Qi-Liang Wang. "Vertical GaN Shottky barrier diode with thermally stable TiN anode." Chinese Physics B, October 28, 2020. http://dx.doi.org/10.1088/1674-1056/abc547.

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13

Babich, A. V., V. V. Pogosov, and P. V. Vakula. "SELF-CONSISTENT CALCULATIONS OF WORK FUNCTION, SHOTTKY BARRIER HEIGHTS AND SURFACE ENERGY OF METAL NANOFILMS IN DIELECTRIC CONFINEMENT." Radio Electronics, Computer Science, Control, no. 1 (June 15, 2013). http://dx.doi.org/10.15588/1607-3274-2013-1-1.

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14

Tsakalakos, Loucas, Darryl Michael, Jody Fronheiser, Joleyn Balch, Robert Wortman, Paul Wilson, David White, Rolf Boone, and Stephen LeBoeuf. "Time Resolved Photoconduction Studies of Uniformly Doped and p-n Junction Si Nanowires." MRS Proceedings 958 (2006). http://dx.doi.org/10.1557/proc-0958-l10-36.

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ABSTRACTThe time resolved and DC photoconduction characteristics of Si nanowire devices are described. Si nanowires with diameters ranging from 20-100 nm were grown using the vapor-liquid-solid (VLS) growth mechanism under standard conditions and devices were fabricated in a back-gate field effect transistor (FET) configuration using simple photolithography. It is shown that under certain biasing conditions, illumination with light from light emitting diodes with wavelengths ranging from 480 nm to 625 nm causes changes in current as high as 4%. On the other hand, illumination by a broadband incandescent source causes a ∼4.1% percent change in current. Photoconductive decay curves show bi- and tri-exponential behavior, indicative of multiple potential recombination mechanisms occurring within the Si nanowire devices. p-n doped Si nanowires show similar behavior. Studies under various drain and gate voltages provides insight into the proposed mechanism. It is argued that the Shottky barrier plays a strong role in the observed photoconduction process in these wires, as do transitions involving surface and deep level trap states.
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15

Delimova, Lyuba A., Igor V. Grekhov, Dmitri V. Mashovets, Sangmin Shin, June-Mo Koo, Suk-Pil Kim, and Youngsoo Park. "Thin Ferroelectric Film between Double Schottky Barriers." MRS Proceedings 830 (2004). http://dx.doi.org/10.1557/proc-830-d3.19.

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ABSTRACTThin-film uniform metal-ferroelectric-metal (M/F/M) structure between back-to-back Schottky barriers (SBs) is considered. The ferroelectric is assumed to be a p-type semiconductor, and the film thickness is far less than the depletion layer induced by the S.B. Numerical integration of the Poisson equation is used to analyze the influence of double Shottky barriers on the distributions of the electric field, potential, and polarization across the film thickness as functions of external bias and the film electrical history. The range of structure parameters is determined, where the Poisson equation for M/F/M structure can be solved analytically providing an obvious and easy-to-interpret representation of the M/F/M behavior. Electric fields induced by back-to-back SBs under zero external bias compensate each other to a great extent. As a result, the potential across the ferroelectric film remains virtually unchanged providing the flat-band condition in the energy diagram of zero-biased M/F/M structure; in fact, the external bias applied to M/F/M structure exerts influence only on the reverse-biased barrier.
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