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Journal articles on the topic 'Si/β-FeSi2'

Author: Grafiati

Published: 6 September 2023

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1

Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa та Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, № 4 (2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.

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β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/(111)Si and [001]β-FeSi2/[1\bar 10]Si. Moreover, the heterojunction between the β-FeSi2(110) flat islands and the Si(111) substrate was an atomically and chemically abrupt interface without any irregularities. It is believed that these results are caused by the use of ultra-thin SiO2 films in our fabrication method, which is likely to be beneficial particularly for fabricating practical nanoscaled devices.

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2

Eguchi, Hajime, Motoki Iinuma, Hirofumi Hoshida, Naoki Murakoso та Yoshikazu Terai. "Growth of Sb-Doped β-FeSi₂ Epitaxial Films and Optimization of Donor Activation Conditions". Defect and Diffusion Forum 386 (вересень 2018): 38–42. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.38.

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Sb-doped β-FeSi2 epitaxial films on Si(111) were grown by molecular beam epitaxy to control an electron density of β-FeSi2. After an optimization of donor activation conditions in the Sb-doped β-FeSi2, the electron density of 6 × 1018 cm-3 at 300 K was achieved by thermal annealing in a N2 ambient. In the temperature dependence of carrier density, the n-type conduction was changed to p-type conduction at low temperatures in the film annealed at high temperature (600 °C). Raman spectra of the annealed films showed that both Fe and Si sites were substituted by the doped Sb in β-FeSi2 lattice.

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3

Akiyama, Kensuke, Hiroshi Funakubo та Masaru Itakura. "Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate". MRS Proceedings 1493 (2013): 189–94. http://dx.doi.org/10.1557/opl.2013.407.

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ABSTRACTHigh-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

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4

Li, Xiao Na, Bing Hu, Chuang Dong, and Xin Jiang. "Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering." Materials Science Forum 561-565 (October 2007): 1161–64. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1161.

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Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/β-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of β-FeSi2 film on the preparation parameters. It was found that β-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm ,with a direct band-gap of 0.94eV in room temperature. After annealing at 850°C, particles grow lager, however the stability of thin films was still good.

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5

Akiyama, Kensuke, Yuu Motoizumi, Tetsuya Okuda, Hiroshi Funakubo, Hiroshi Irie, and Yoshihisa Matsumoto. "Synthesis and Photocatalytic Properties of Iron Disilicide/SiC Composite Powder." MRS Advances 2, no. 8 (2017): 471–76. http://dx.doi.org/10.1557/adv.2017.221.

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ABSTRACTSemiconducting iron disilicide (β-FeSi2) island grains of 50-100 nanometers in size were formed on the surface of Au-coated 3C-SiC powder by metal-organic chemical vapor deposition. On the surface of 3C-SiC powder, the Au-Si liquidus phase was obtained via a Au-Si eutectic reaction, which contributed to the formation of the β-FeSi2 island grains. This β-FeSi2/SiC composite powder could evolve hydrogen (H2) from methyl-alcohol aqueous solution under irradiation of visible light with wavelengths of 420-650 nm.

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6

Tsunoda, Tatsuo, Masakazu Mukaida, Akio Watanabe, and Yoji Imai. "Composition dependence of morphology, structure, and thermoelectric properties of FeSi2 films prepared by sputtering deposition." Journal of Materials Research 11, no. 8 (1996): 2062–70. http://dx.doi.org/10.1557/jmr.1996.0259.

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Direct β–FeSi2 film preparation from gaseous phase was examined using a radio-frequency (rf) sputtering deposition apparatus equipped with a composite target of iron and silicon. Films composed of only β–FeSi2 phase were formed at substrate temperatures above 573 K when the chemical composition of the film was very close to stoichiometric FeSi2. The β–FeSi2 films thus formed showed rather large positive Seebeck coefficient. When the chemical composition of the films were deviated to the Fe-rich side, ∈–FeSi phase was formed along with β–FeSi2. On the other hand, α–FeSi2 phase, which is stable above 1210 K in the equilibrium phase diagram, was formed at the substrate temperature as low as 723 K when the chemical composition was deviated to the Si-rich side. The formation of α–FeSi2 phase induced drastic changes in the morphology and thermoelectric properties of the films. The α–FeSi2 phase formed in the films was easily transformed to β–FeSi2 phase by a thermal treatment.

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7

Lin, X. W., Z. Liliental-Weber, J. Washburn, J. Desimoni та H. Bernas. "Formation of β-FeSi2, by thermal annealing of Fe-implanted (001) Si". Proceedings, annual meeting, Electron Microscopy Society of America 51 (1 серпня 1993): 808–9. http://dx.doi.org/10.1017/s0424820100149878.

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Epitaxy of semiconducting β-FeSi2 on Si is of interest for optoelectronic device technology, because of its direct bandgap of ≈0.9 eV. Several techniques, including solid phase epitaxy (SPE) and ion beam synthesis, have been successfully used to grow β-FeSi2 on either Si (001) or (111) wafers. In this paper, we report the epitaxial formation of β-FeSi2 upon thermal annealing of an Fe-Si amorphous layer formed by ion implantation.Si (001) wafers were first implanted at room temperature with 50-keV Fe+ ions to a dose of 0.5 - 1×1016 cm−2, corresponding to a peak Fe concentration of cp ≈ 2 - 4 at.%, and subsequently annealed at 320, 520, and 900°C, in order to induce SPE of the implanted amorphous layer. Cross-sectional high-resolution electron microscopy (HREM) was used for structural characterization.We find that the implanted surface layer ( ≈100 nm thick) remains amorphous for samples annealed at 320°C for as long as 3.2 h, whereas annealing above 520°C results in SPE of Si, along with precipitation of β-FeSi2.

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8

Nanko, Makoto, Se Hun Chang, Koji Matsumaru, Kozo Ishizaki та Masatoshi Takeda. "Isothermal Oxidation of Sintered β-FeSi₂ in Air". Materials Science Forum 522-523 (серпень 2006): 641–48. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.641.

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High-temperature oxidation of sintered β-FeSi2 doped with Mn and Co was evaluated at 800°C in air. Amorphous SiO2 was developed as an oxide scale. Granular ε-FeSi also appeared below the SiO2 scale as a result of consumption of Si in β-FeSi2. Growth of the oxide scale on doped FeSi2 followed a parabolic law and its rate was similar to oxidation of undoped samples. Thermoelectric properties of sintered β-FeSi2 were also evaluated before and after oxidation at 800°C for 7 days. There was no significant change in thermoelectric properties after high-temperature oxidation on β-FeSi2 sintered bodies.

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9

Visotin, Maxim A., I. A. Tarasov, A. S. Fedorov, S. N. Varnakov та S. G. Ovchinnikov. "Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases". Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 76, № 3 (2020): 469–82. http://dx.doi.org/10.1107/s2052520620005727.

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A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

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10

Akiyama, Kensuke, Satoru Kaneko, Yasuo Hirabayashi та Hiroshi Funakubo. "Photoluminescence properties of Si/β-FeSi2/Si double heterostructure". Thin Solid Films 508, № 1-2 (2006): 380–84. http://dx.doi.org/10.1016/j.tsf.2005.07.353.

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11

Dimitriadis, C. A. "Electrical properties of β‐FeSi2/Si heterojunctions". Journal of Applied Physics 70, № 10 (1991): 5423–26. http://dx.doi.org/10.1063/1.350372.

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12

Suemasu, T., Y. Negishi, K. Takakura, F. Hasegawa та T. Chikyow. "Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes". Applied Physics Letters 79, № 12 (2001): 1804–6. http://dx.doi.org/10.1063/1.1405001.

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13

Grimaldi, M. G., G. Franzò, S. Ravesi, A. Terrasi, C. Spinella та A. La Mantia. "Formation of epitaxial γ-FeSi2 and β-FeSi2 layers on (111) Si". Applied Surface Science 74, № 1 (1994): 19–26. http://dx.doi.org/10.1016/0169-4332(94)90095-7.

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14

Oostra, D. J., D. E. W. Vandenhoudt, C. W. T. Bulle‐Lieuwma та E. P. Naburgh. "Ion‐beam synthesis of a Si/β‐FeSi2/Si heterostructure". Applied Physics Letters 59, № 14 (1991): 1737–39. http://dx.doi.org/10.1063/1.106235.

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15

Datta, A., S. Kal та S. Basu. "Current-voltage studies on β-FeSi2/Si heterojunction". Bulletin of Materials Science 23, № 4 (2000): 331–34. http://dx.doi.org/10.1007/bf02720092.

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16

Evangelou, E. K., G. E. Giakoumakis та C. A. Dimitriadis. "Deep levels in β-FeSi2/n-Si heterojunctions". Solid State Communications 86, № 5 (1993): 309–12. http://dx.doi.org/10.1016/0038-1098(93)90379-2.

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17

Lefki, K., та P. Muret. "Internal photoemission in metal/β-FeSi2/Si heterojunctions". Applied Surface Science 65-66 (березень 1993): 772–76. http://dx.doi.org/10.1016/0169-4332(93)90754-y.

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18

Liu, Hongfei, Chengcheh Tan та Dongzhi Chi. "Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30, № 4 (2012): 041516. http://dx.doi.org/10.1116/1.4731200.

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19

Suzuno, Mitsushi, Keiichi Akutsu, Hideki Kawakami, Kensuke Akiyama та Takashi Suemasu. "Metalorganic chemical vapor deposition of β-FeSi2 on β-FeSi2 seed crystals formed on Si substrates". Thin Solid Films 519, № 24 (2011): 8473–76. http://dx.doi.org/10.1016/j.tsf.2011.05.029.

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20

Fedorov, A. S., A. A. Kuzubov, T. A. Kozhevnikova та ін. "Features of the structure and properties of β-FeSi2 nanofilms and a β-FeSi2/Si interface". JETP Letters 95, № 1 (2012): 20–24. http://dx.doi.org/10.1134/s0021364012010055.

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21

Kimura, Yoshisato, Hiroaki Otani, Ayaka Mori та Yaw-Wang Chai. "Evaluation of Microstructure Formation and Phase Equilibria for Thermoelectric β-FeSi2 Composite Alloys". MRS Advances 2, № 26 (2017): 1369–74. http://dx.doi.org/10.1557/adv.2017.115.

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ABSTRACTThermoelectric composite alloys consisting of the β-FeSi2 matrix and SiO2 particles dispersion were fabricated by a so-called combined reactions sintering process using reduction and oxidation reactions between eutectoid Si decomposed from α-Fe2Si5 and added Fe-oxide powder. Typical microstructure may include some of residual eutectoid Si particles, intermediate product Fe2SiO4 particles, and/or remaining reduced Fe particles depending on the composite alloy compositions and the process conditions. Partitioning of doping element, n-type Co or p-type Mn, during the process plays an important role to control the optimum carrier concentration of the composite alloys. Thermal conductivity can be reduced, as expected, by the dispersion of SiO2 particles. The solubility of doping elements, Co, Mn, Al, and Ru was evaluated in α-Fe2Si5 at 1373 K and in β-FeSi2 at 1073 K being based on the isotherm determination. It is suggested that suitable dopants for the present process are n-type Co and p-type Mn, since they have sufficiently large solubility around 10 at% in both α-Fe2Si5 and β-FeSi2 phases.

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22

Olk, C. H., O. P. Karpenko, S. M. Yalisove, G. L. Doll та J. F. Mansfield. "Growth of epitaxial β-FeSi2 thin films by pulsed laser deposition on silicon (111)". Journal of Materials Research 9, № 11 (1994): 2733–36. http://dx.doi.org/10.1557/jmr.1994.2733.

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Epitaxial films of semiconducting iron disilicide (β-FeSi2) have been grown by pulsed laser deposition. We find that pulsed laser deposition creates conditions favorable to the formation of films with the smallest geometric misfit possessed by this material system. In situ reflection high energy electron diffraction results indicate a layer by layer growth of the silicide. Analysis of transmission electron diffraction data has determined that the films are single phase and that this growth method reproduces the epitaxial relationship: β-FeSi2 (001) ‖ Si(111).

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23

Okajima, Keiichi, Ching-ju Wen, Manabu Ihara, Isao Sakata та Koichi Yamada. "Optical and Electrical Properties of β-FeSi2/Si, β-FeSi2/InP Heterojunction Prepared by RF-Sputtering Deposition". Japanese Journal of Applied Physics 38, Part 1, No. 2A (1999): 781–86. http://dx.doi.org/10.1143/jjap.38.781.

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24

Charoenyuenyao, Peerasil, Nathaporn Promros, Rawiwan Chaleawpong та ін. "Wettability, Surface Morphology and Structural Properties of β-FeSi2 Films Manufactured Through Usage of Radio-Frequency Magnetron Sputtering". Journal of Nanoscience and Nanotechnology 20, № 8 (2020): 5075–81. http://dx.doi.org/10.1166/jnn.2020.17839.

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In this research, β-FeSi2 thin films were manufactured onto Si(111) wafer substrates through the usage of radio-frequency magnetron sputtering (RFMS) method at 2.66 × 10−1 Pa of sputtering pressure. The substrate temperatures were varied at 500 °C, 560 °C, and 600 °C. The Raman lines of the β-FeSi2 fabricated at 500 °C revealed the peaks at the positions of ~174 cm−1, ~189 cm−1, ~199 cm−1, ~243 cm−1, ~278 cm−1, and ~334 cm−1. For the higher substrate temperatures of 560 °C and 600 °C, the Raman peaks of ~189 cm−1, ~243 cm−1, and ~278 cm−1 were shifted toward higher Raman positions. The surface view of the films was observed with several grains over the β-FeSi2 film surface at all substrate temperatures. The average grain size of the films for the samples deposited at 500 °C and 560 °C was in the range of 28 to 30 nm, where the size was enlarged to 36 nm at 600 °C of substrate temperature. The root mean square roughness were 10.19 nm, 10.84 nm, and 13.67 nm for the β-FeSi2 film surface prepared at the substrate temperatures of 500 °C, 560 °C, and 600 °C, respectively. The contact angle (CA) values were 99.25°, 99.80°, and 102.00° for the created samples at 500 °C, 560 °C, and 600 °C, respectively. As the acquired CA values, all β-FeSi2 samples exhibited a hydrophobic property with CA in the range of 90° to 150°. Consequently, the produced β-FeSi2 film surface employing the RFMS method indicated a potential to be employed in a hydrophobic coating application.

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25

He Jiuyang, 何久洋, 马媛媛 Ma Yuanyuan, 万英 Wan Ying, 阿孜古丽·热合曼 Aziguli·Reheman та 艾尔肯·斯地克 Aierken·Sidike. "1540 nm Photoluminescence Enhancement in Er Doped β-FeSi2/Si". Laser & Optoelectronics Progress 52, № 8 (2015): 083101. http://dx.doi.org/10.3788/lop52.083101.

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26

Terukov, E. I., O. I. Kon’kov, V. Kh Kudoyarova, O. B. Gusev, V. Yu Davydov та G. N. Mosina. "The formation of β-FeSi2 precipitates in microcrystalline Si". Semiconductors 36, № 11 (2002): 1235–39. http://dx.doi.org/10.1134/1.1521222.

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27

Tassis, D. H., C. A. Dimitriadis, J. Brini, G. Kamarinos, M. Angelakeris та N. Flevaris. "Low frequency noise in β-FeSi2/n-Si heterojunctions". Applied Physics Letters 72, № 6 (1998): 713–15. http://dx.doi.org/10.1063/1.120854.

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28

Chen, H., P. Han, X. D. Huang та Y. D. Zheng. "Solid phase epitaxy of β‐FeSi2 on Si(100)". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, № 3 (1996): 905–7. http://dx.doi.org/10.1116/1.580412.

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29

Murakami, Y., Y. Tsukahara, A. Kenjo, T. Sadoh, Y. Maeda та M. Miyao. "Impurity conduction in ion beam synthesized β-FeSi2/Si". Thin Solid Films 461, № 1 (2004): 198–201. http://dx.doi.org/10.1016/j.tsf.2004.02.071.

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30

De Crescenzi, M., G. Gaggiotti, N. Motta та ін. "Electronic structure of epitaxial β-FeSi2 on Si(111)". Surface Science Letters 251-252 (липень 1991): A317. http://dx.doi.org/10.1016/0167-2584(91)90849-m.

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31

De Crescenzi, M., G. Gaggiotti, N. Motta та ін. "Electronic structure of epitaxial β-FeSi2 on Si(111)". Surface Science 251-252 (липень 1991): 175–79. http://dx.doi.org/10.1016/0039-6028(91)90976-y.

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32

Galkin, N. G., D. L. Goroshko, A. S. Gouralnik, V. O. Polyarnyi, I. V. Louchaninov та S. V. Vavanova. "Formation and transport properties of Si(111)/β-FeSi2/Si nanocluster structures". e-Journal of Surface Science and Nanotechnology 3 (2005): 97–106. http://dx.doi.org/10.1380/ejssnt.2005.97.

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33

Yoneda, K., Y. Terai, K. Noda, N. Miura та Y. Fujiwara. "Photoluminescence and photoreflectance studies in Si/β-FeSi2/Si(001) double heterostructure". Physics Procedia 11 (2011): 185–88. http://dx.doi.org/10.1016/j.phpro.2011.01.025.

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34

Bellani, V., G. Guizzetti, F. Marabelli, M. Patrini, S. Lagomarsino та H. von Känel. "Optical functions of epitaxial β-FeSi2 on Si(001) and Si(111)". Solid State Communications 96, № 10 (1995): 751–56. http://dx.doi.org/10.1016/0038-1098(95)00546-3.

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35

Akiyama, Kensuke, Shunichi Motomura, Gohei Hayashi, Hiroshi Funakubo та Masaru Itakura. "Evaluation of β-FeSi2/Si-interface using Ag-coating on Si surface". physica status solidi (c) 10, № 12 (2013): 1684–87. http://dx.doi.org/10.1002/pssc.201300331.

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36

Ozawa, Y., T. Ohtsuka, Cheng Li, T. Suemasu та F. Hasegawa. "Influence of β-FeSi2 particle size and Si growth rate on 1.5 μm photoluminescence from Si/β-FeSi2-particles/Si structures grown by molecular-beam epitaxy". Journal of Applied Physics 95, № 10 (2004): 5483–86. http://dx.doi.org/10.1063/1.1707233.

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37

Suemasu, T., T. Fujii, K. Takakura та F. Hasegawa. "Dependence of photoluminescence from β-FeSi2 and induced deep levels in Si on the size of β-FeSi2 balls embedded in Si crystals". Thin Solid Films 381, № 2 (2001): 209–13. http://dx.doi.org/10.1016/s0040-6090(00)01745-4.

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38

Je, J. H., H. K. Kim, and D. Y. Noh. "Amorphous, Silicide, and Crystalline Fe Films Grown on Si(001) by Radio-frequency Magnetron Sputtering." Journal of Materials Research 14, no. 4 (1999): 1658–63. http://dx.doi.org/10.1557/jmr.1999.0223.

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The microstructure of the amorphous, silicide, and crystalline Fe films grown on Si(001) substrates by a radio-frequency (rf) magnetron sputtering was studied in synchrotron x-ray scattering experiments. During the growth, iron-silicide interlayers were always formed. The silicide interlayer became crystalline β–FeSi2 at high rf power (⩾20 W/cm2) and at the substrate temperature of 100 °C. The formation of the β–FeSi2 was also promoted by postannealing to 300 °C. The Fe films grown on top of the silicide interlayer were amorphous at low substrate temperatures (⩽100 °C). It became crystalline only at high substrate temperature (300 °C) with the low rf power of 2 W/cm2. The crystalline Fe film was nonepitaxial but had the [111] preferred orientation.

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39

Shaban, Mahmoud, Kazuhiro Nakashima, Wataru Yokoyama та Tsuyoshi Yoshitake. "Photovoltaic Properties ofn-type β-FeSi2/p-type Si Heterojunctions". Japanese Journal of Applied Physics 46, No. 27 (2007): L667—L669. http://dx.doi.org/10.1143/jjap.46.l667.

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40

Terai, Yoshikazu, Yoshihito Maeda та Yasufumi Fujiwara. "Nondestructive investigation of β-FeSi2/Si interface by photoluminescence measurements". Thin Solid Films 515, № 22 (2007): 8129–32. http://dx.doi.org/10.1016/j.tsf.2007.02.058.

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41

Han, Ming, Miyoko Tanaka, Masaki Takeguchi та Kazuo Furuya. "Rod-like β-FeSi2 phase grown on Si (111) substrate". Thin Solid Films 461, № 1 (2004): 136–40. http://dx.doi.org/10.1016/j.tsf.2004.02.087.

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42

Zhu, Y. M., W. Z. Zhang та F. Ye. "One of the potentially optimal interfaces of β-FeSi2/Si". Journal of Crystal Growth 279, № 1-2 (2005): 129–39. http://dx.doi.org/10.1016/j.jcrysgro.2005.02.023.

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43

Sakane, Shunya, Masayuki Isogawa, Kentaro Watanabe та ін. "Epitaxial multilayers of β-FeSi2 nanodots/Si for Si-based nanostructured electronic materials". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, № 4 (2017): 041402. http://dx.doi.org/10.1116/1.4984107.

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44

Suemasu, T., Y. Ugajin, S. Murase, T. Sunohara та M. Suzuno. "Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy". Journal of Applied Physics 101, № 12 (2007): 124506. http://dx.doi.org/10.1063/1.2749200.

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45

Lee, Kikang, Jejun Jeong, Yeoneyi Chu, Jongbeom Kim, Kyuhwan Oh, and Jeongtak Moon. "Properties of Fe–Si Alloy Anode for Lithium-Ion Battery Synthesized Using Mechanical Milling." Materials 15, no. 5 (2022): 1873. http://dx.doi.org/10.3390/ma15051873.

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Silicon (Si)-based anode materials can increase the energy density of lithium (Li)-ion batteries owing to the high weight and volume capacity of Si. However, their electrochemical properties rapidly deteriorate due to large volume changes in the electrode resulting from repeated charging and discharging. In this study, we manufactured structurally stable Fe–Si alloy powders by performing high-energy milling for up to 24 h through the reduction of the Si phase size and the formation of the α-FeSi2 phase. The cause behind the deterioration of the electrochemical properties of the Fe–Si alloy powder produced by over-milling (milling for an increased time) was investigated. The 12 h milled Fe–Si alloy powder showed the best electrochemical properties. Through the microstructural analysis of the Fe–Si alloy powders after the evaluation of half/full coin cells, powder resistance tests, and charge/discharge cycles, it was found that this was due to the low electrical conductivity and durability of β-FeSi2. The findings provide insight into the possible improvements in battery performance through the commercialization of Fe–Si alloy powders produced by over-milling in a mechanical alloying process.

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46

Marinova, M., M. Baleva та G. Zlateva. "Resonant Raman and Micro-Raman Scattering from Si Matrix with Unburied β-FeSi2 Nanolayers". Journal of Nanoscience and Nanotechnology 8, № 2 (2008): 775–79. http://dx.doi.org/10.1166/jnn.2008.a055.

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Abstract:

Samples, representing Si matrix with nanolayers of the semiconducting β-FeSi2 silicide are studied by Raman scattering. The unpolarized Raman spectra of the samples are measured in two different configurations. It is found that the characteristic β-FeSi2 Raman modes are seen in the spectra, taken at incident angle of about 45°, while only comparatively intensive broad feature is detected in a back-scattering geometry. The difference in the spectra is interpreted with the appearance of surface polariton modes of the optical phonons in the nanosized layers in near back-scattering geometry. The resonant Raman scattering is investigated at incident light angle of about 45° and the energies of the interband transitions in the investigated energy range are determined. It is known that the resonant Raman scattering appears to be even more precise method for the determination of the interband transitions energies than the modulation spectroscopy. Thus we claim that the energies determined here are firstly determined with such a precision.

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47

Ishimaru, Manabu, Keisuke Omae, In-Tae Bae та ін. "Formation process of β-FeSi2∕Si heterostructure in high-dose Fe ion implanted Si". Journal of Applied Physics 99, № 11 (2006): 113527. http://dx.doi.org/10.1063/1.2201729.

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Hattori, Azusa N., Ken Hattori, Kenji Kodama, Nobuyoshi Hosoito та Hiroshi Daimon. "Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate". Applied Physics Letters 91, № 20 (2007): 201916. http://dx.doi.org/10.1063/1.2804006.

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Erlesand, U., та M. Östling. "Electrical characterization of the β‐FeSi2/Si heterojunction after thermal oxidation". Applied Physics Letters 68, № 1 (1996): 105–7. http://dx.doi.org/10.1063/1.116770.

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Maeda, Yoshihito, Kenji Umezawa, Yoshikazu Hayashi, Kiyoshi Miyake та Kenya Ohashi. "Photovoltaic properties of ion-beam synthesized β-FeSi2/n-Si heterojunctions". Thin Solid Films 381, № 2 (2001): 256–61. http://dx.doi.org/10.1016/s0040-6090(00)01753-3.

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