Academic literature on the topic 'Si(001)-2x1'

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Journal articles on the topic "Si(001)-2x1"

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Hasegawa, Shigehiko, Yoshio Minakuchi, and Hisao Nakashima. "Initial stages of Ge growth on Si(001) (2x1) surfaces." Superlattices and Microstructures 12, no. 1 (January 1992): 97–100. http://dx.doi.org/10.1016/0749-6036(92)90229-x.

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Kanasaki, J., K. Katoh, Y. Imanishi, and K. Tanimura. "Electronic bond rupture of Si-Dimers on Si(001)-(2x1) induced by pulsed laser excitation." Applied Physics A 79, no. 4-6 (September 2004): 865–68. http://dx.doi.org/10.1007/s00339-004-2608-z.

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Batra, Inder P. "Density functional study of the electronic properties of the Si (001)2x1-potassium surface." Journal de Chimie Physique 86 (1989): 689–702. http://dx.doi.org/10.1051/jcp/1989860689.

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HASEGAWA, Y., T. HASHIZUME, I. KAMIYA, T. IDE, I. SUMITA, S. HYODO, T. SAKURAI, H. TOCHIHARA, M. KUBOTA, and Y. MURATA. "SCANNING TUNNELING MICROSCOPY STUDY OF ALKALI METAL ADSORPTION ON THE Si (001) 2x1 SURFACE." Le Journal de Physique Colloques 50, no. C8 (November 1989): C8–229—C8–234. http://dx.doi.org/10.1051/jphyscol:1989839.

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Borensztein, Y., N. Witkowski, and S. Royer. "Isotropic and anisotropic optical reflectances of clean and hydrogen-covered Si(001)2x1 surfaces." physica status solidi (c), no. 8 (December 2003): 2966–70. http://dx.doi.org/10.1002/pssc.200303830.

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Miki, K., H. Liu, and J. H. G. Owen. "Mn Silicide Nanowires on the Si(001)-2x1 Surface Having Anisotropic Strain Fields with Bi Nanolines." ECS Transactions 50, no. 6 (March 15, 2013): 17–23. http://dx.doi.org/10.1149/05006.0017ecst.

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Yamanaka, A., H. Ohse, and K. Yagi. "Rem Study of Current Effect on the Structure of Clean Si(111) Surface." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 306–7. http://dx.doi.org/10.1017/s0424820100180288.

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Recently current effects on clean and metal adsorbate surfaces have attracted much attention not only because of interesting phenomena but also because of practically importance in treatingclean and metal adsorbate surfaces [1-6]. In the former case, metals deposited migrate on the deposit depending on the current direction and a patch of the deposit expands on the clean surface [1]. The migration is closely related to the adsorbate structures and substrate structures including their anisotropy [2,7]. In the latter case, configurations of surface atomic steps depends on the current direction. In the case of Si(001) surface equally spaced array of monatom high steps along the [110] direction produces the 2x1 and 1x2 terraces. However, a relative terrace width of the two domain depends on the current direction; a step-up current widen terraces on which dimers are parallel to the current, while a step-down current widen the other terraces [3]. On (111) surface, a step-down current produces step bunching at temperatures between 1250-1350°C, while a step-up current produces step bunching at temperatures between 1050-1250°C [5].In the present paper, our REM observations on a current induced step bunching, started independently, are described.Our results are summarized as follows.(1) Above around 1000°C a step-up current induces step bunching. The phenomenon reverses around 1200 C; a step-down current induces step bunching. The observations agree with the previous reports [5].
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Dissertations / Theses on the topic "Si(001)-2x1"

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FERRET, DOMINIQUE. "Developpement d'une experience d'ondes stationnaires en rayonnement synchrotron : application a l'etude de as/si(001) 2x1." Paris 6, 1990. http://www.theses.fr/1990PA066133.

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La technique des ondes stationnaires de rayons x s'est developpee ces dernieres annees et s'applique a la localisation d'atomes dans une matrice cristalline ou a un interface. Cette methode repose sur l'etablissement d'un systeme d'ondes stationnaires dans un cristal en position de reflexion de bragg. Les plans de nuds et de ventres sont paralleles aux plans reflecteurs et ont la meme periodicite. Des atomes places sur les ventres du champ electrique emettent des photons de fluorescence et des electrons d'energies caracteristiques de l'espece chimique. Quant on decrit le profil de reflexion de bragg, les nuds et les ventres se deplacent, le long de la normale aux plans reflecteurs, d'une demi-periode. En enregistrant simultanement les variations de l'intensite reflechie par le cristal et du rayonnement d'emission secondaire (photons de fluorescence ou electrons) emis par les atomes, on peut localiser ces atomes par rapport aux plans reflecteurs. Le travail presente a consiste en l'installation et la mise au point d'un montage experimental d'ondes stationnaires en rayonnement synchrotron au l. U. R. E. (orsay, france) et en la realisation des premieres acquisitions de donnees. Nous exposons les resultats obtenus dans l'etude de la localisation d'atomes d'arsenic d'une monocouche deposee sur un substrat de silicium (001)
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RANGAN, Sylvie. "Réactivité des nitriles sur la surface Si(001)-2x1, étudiée par spectroscopies de photoémission, d'absorption X et microscopie tunnel." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2004. http://tel.archives-ouvertes.fr/tel-00010268.

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Les spectroscopies de photoémission, d'absorption X –assistées par des calculs DFT d'états de coeur excités – et la microscopie tunnel, ont permis de déterminer avec précision les géométries d'adsorption, sur la surface Si(001)-2×1, de quatre molécules possédant un groupe cyano, monofonctionnelle - comme l'acétonitrile - ou polyfonctionnelles - comme le benzonitrile, l'acrylonitrile et le cyanure de vinyle. La chimie organique fournit le cadre général des réactions possibles à la surface. Ce sont des considérations d'ordre cinétique qui sélectionnent les modes d'adsorption des molécules organiques. Un réglage fin des conditions expérimentales permettrait donc d'obtenir les modes d'adsorption désirés en vue d'application dans le domaine de l'électronique moléculaire.
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Rangan, Sylvie. "Réactivité des nitriles sur la surface Si(001)-2x1, étudiée par spectroscopie de photoémission, d'absorption X, et microscopie tunnel." Paris 6, 2004. https://tel.archives-ouvertes.fr/tel-00010268.

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Mathieu, Claire. "Approche intégrée "spectroscopies électroniques et calculs ab-initio d'états de cœur excités" des modes d'adsorption de l'ammoniac et de diamines sur la surface Si(001)-2x1." Paris 6, 2009. http://www.theses.fr/2009PA066287.

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Le greffage chimique et l’assemblage supramoléculaire de molécules organiques sur les semi-conducteurs, est une approche intéressante pour la fabrication de dispositifs dans le domaine de l’électronique moléculaire. En particulier, la surface de silicium orientée (001) reconstruite 21, peut être utilisée comme un gabarit pour greffer des molécules organiques de façon organisée dans des conditions de ultra haut vide. Cependant, les molécules bifonctionnelles conduisent à des géométries d’adsorption multiples, qu’il est nécessaire de comprendre afin de pouvoir les contrôler. Les spectroscopies de photoémission et d’absorption X, associées à des calculs DFT de structure électroniques, ont permis de déterminer les modes d’adsorption de l’ammoniac, de l’éthylènediamine, du 1-4 diaminobutane et du N,N,N’,N’ tétraméthyléthylènediamine sur la surface Si(001)-2×1. Dans ce dernier cas, une évolution des modes d’adsorption, en fonction de la dose d’exposition et d’irradiation a également pu être mise en évidence.
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Lee, Michael Vernon. "Development of Chemomechanical Functionalization and Nanografting on Silicon Surfaces." BYU ScholarsArchive, 2007. https://scholarsarchive.byu.edu/etd/1435.

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Progress in chemomechanical functionalization was made by investigating the binding of molecules and surface coverage on the silicon surface, demonstrating functionalization of silicon with gases by chemomechanical means, analyzing atomic force microscopy probe tip wear in atomic force microscopy (AFM) chemomechanical nanografting, combining chemomechanical functionalization and nanografting to pattern silicon with an atomic force microscope, and extending chemomechanical nanografting to silicon dioxide. Molecular mechanics of alkenes and alkynes bound to Si(001)-2x1 as a model of chemomechanically functionalized surfaces indicated that complete coverage is energetically favorable and becomes more favorable for longer chain species. Scribing a silicon surface in the presence of ethylene and acetylene demonstrated chemomechanical functionalization with gaseous reagents, which simplifies sample cleanup and adds a range of reagents to those possible for chemomechanical functionalization. Thermal desorption spectroscopy was performed on chemomechanically functionalized samples and demonstrated the similarity in binding of molecules to the scribed silicon surface and to the common Si(001)-2x1 and Si(111)-7x7 surfaces. The wearing of atomic force microscope probe tips during chemomechanical functionalization was investigated by correlating change over time and force with widths of created lines to illustrate the detrimental effect of tip wear on mechanically-driven nanopatterning methods. In order to have a starting surface more stable than hydrogen-terminated silicon, silicon reacted with 1-octene was used as a starting surface for AFM chemomechanical functionalization, producing chemomechanical nanografting. Chemomechanical nanografting was then demonstrated on silicon dioxide using silane molecules; the initial passivating layer reduced the tip friction on the surface to allow only partial nanografting of the silane molecules. These studies broadened the scope and understanding of chemomechanical functionalization and nanografting.
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Lu, Chih-Yuan, and 盧之苑. "Photoemission study of MgB2 on the Si(001)-2x1 surface." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/31333475815441051242.

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碩士
國立清華大學
材料科學工程學系
90
Abstract In this thesis, we have utilized synchrotron-radiation photoemission spectroscopy to investigate the adsorption of MgB2 molecules on the Si(001)-2×1 surface. We found that while the MgB2 molecule land on the silicon surface, the MgB2 molecule begins to decompose. It results in the fact that the magnesium and boron atoms are bonded to each of the surface dimer atoms respectively. Furthermore, we discovered the packing method and pressure effect do have an influence on the formation and growth of MgB2 film on the interface.
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yeh, jing-ming, and 葉志銘. "Observation of Si(001)-(2x1) dimer structure by kikuchi electron holograpy." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/45686484621543379391.

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Tien, Li-Chia, and 田禮嘉. "Initial growth stages of CaF2 on the Si(001)-2x1 surface." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/41202830357974556119.

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Cheng, Chiu-Ping, and 鄭秋平. "Synchroton Radiation Photoemission Study on Effects of Adsorbates on Clean Si(001)2x1 Surface." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/81865761287884351440.

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Eisenhut, Frank. "STM investigation of model systems for atomic and molecular scale electronics." 2019. https://tud.qucosa.de/id/qucosa%3A34885.

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In this thesis, I explore model systems for planar atomic and molecular scale electronics on surfaces. The nanoscale systems are experimentally investigated by combining scanning tunneling microscopy (STM) with atomic and molecular manipulation. Furthermore, the on-surface chemical synthesis of molecules, as well as the construction of atomic wires on selected surfaces is applied. Polycyclic aromatic hydrocarbon (PAH) molecules play a key role in this work, as they can provide the functionality of the molecular scale devices. In the first part of this work, I investigate different PAH´s on the Au(111) surface. The precursor molecules form supramolecular assemblies and the on-surface synthesis approach to obtain the desired molecular products is used. In particular, bisanthene molecules via a cyclodehydrogenation reaction and the non-alternant polyaromatic hydrocarbon diindenopyrene after a thermally induced debromination followed by selective ring-closure to form a five-membered ring are obtained. An interesting surface for future applications is the passivated silicon Si(001)-(2x1):H. I prepare this surface and characterize the substrate. The surface has a band gap and molecules are electronically decoupled from the semiconducting substrate due to the passivation layer. Furthermore, atomic defects on this substrate, so called dangling bonds (DB´s), have defined electronic states. I show that it is possible to produce DB defects controllably by applying voltage pulses using the tip of the STM and achieve with this method atomic wires with DB´s. The third part of this thesis deals with the investigation of molecular structures on Si(001)-(2x1):H. I present the generation of hexacene by a surface assisted reduction. This result can be generalized for the generation of PAH´s after deoxygenation on passivated silicon and can open new routes to design functional molecules on this substrate. Secondly, one-dimensional chains of acetylbiphenyl (ABP) molecules are explored. They interact via its pi-stacked phenyl rings that are considered as conducting channel. Finally, I demonstrate that a single ABP molecule acts as a switch, as one can reversibly passivate and depassivate a single DB by a hydrogen transfer. In the last part of this work, I test the new low-temperature four-probe STM located at CEMES-CNRS in Toulouse. This machine is constructed for the development of molecular scale devices. For this purposes an atomic precision is needed for all the different tips at the same time and a high stability of this scanning probe microscope must be achieved. I perform a manipulation experiment of molecules to test the necessary submolecular precision. For that reason, supramolecular assemblies of ABP molecules on Au(111) are imaged and manipulated by any of the four tips using the lateral manipulation mode as well as by voltage pulses. The stability of the system is shown, as all tips of the four-probe STM work independently in parallel.:1 Introduction 2 Fundamentals of scanning tunneling microscopy 2.1 The working principle 2.2 Scanning tunneling spectroscopy 2.3 Manipulation modes 2.4 Modeling 3 Experimental setup, materials and methods 3.1 The scanning tunneling microscope 3.2 The Au(111) surface 3.3 Further experimental details 4 On-surface synthesis of molecules 4.1 Introduction 4.2 Generation of a periacene 4.3 Investigating a non-alternant PAH 4.4 Conclusion 5 The passivated silicon surface 5.1 Introduction 5.2 Preparation of passivated silicon 5.3 Characterization of Si(001)-(2x1):H 5.4 Tip-induced formation of dangling bonds 5.5 Conclusion 6 Organic molecules on passivated silicon 6.1 Introduction 6.2 Hexacene generated on passivated silicon 6.3 Acetylbiphenyl on passivated silicon 6.4 Conclusion 7 Testing a low temperature four-probe STM 7.1 Introduction 7.2 The four-probe STM 7.3 Performance test of the four-probe STM on Au(111) 7.4 Manipulation of ABP assemblies 7.5 Conclusion 8 Summary and outlook 9 Appendix 9.1 Dibromo-dimethyl-naphtalene on Au(111) 9.2 Epiminotetracene on Au(111) Bibliography Curriculum vitae Scientific contributions Acknowledgement Statement of authorship
In dieser Arbeit untersuche ich Modellsysteme für planare atomare und molekulare Elektronik auf Oberflächen. Die Systeme auf der Nanoskala werden experimentell durch die Kombination aus Rastertunnelmikroskopie (RTM) und atomarer sowie molekularer Manipulation untersucht. Moleküle werden durch die oberflächenchemische Synthese generiert und atomare Drähte auf ausgewählten Oberflächen hergestellt. Polyzyklisch aromatische Kohlenwasserstoff (PAK) Moleküle spielen bei dieser Arbeit eine Schlüsselrolle, da sie die passiven und aktiven Elemente auf molekularem Maßstab darstellen können. Im ersten Teil dieser Arbeit untersuche ich verschiedene PAK´s auf der Au(111)-Oberfläche. Die Präkursoren bilden dabei supramolekulare Anordnungen und ich nutze die Oberflächensynthese, um die gewünschten molekulare Produkte zu erhalten. Im Speziellen habe ich Bisanthen-Moleküle über eine Zyklodehydrogenationsreaktion und das nicht-alternierende PAK Diindenopyren erzeugt. Dieses entsteht nach einer thermisch-induzierten Debromierung gefolgt von selektivem Ringschluss, sodass ein fünfgliedriger Ring gebildet wird. Eine interessante Oberfläche für zukünftige Anwendungen ist das passivierte Silizium Si(001)-(2x1):H. Ich habe diese Oberfläche erfolgreich präpariert und das Substrat charakterisiert. Die Oberfläche hat eine Bandlücke und Moleküle sind elektronisch von dem halbleitenden Substrat durch die Passivierungsschicht entkoppelt. Desweiteren haben atomare Defekte dieser Oberfläche, sogenannte Dangling-Bond´s (DB’s), definierte elektronische Zustände innerhalb der Bandlücke. Ich habe DB´s kontrolliert durch Spannungspulse mithilfe der Spitze des RTM erzeugt und stelle so atomare Drähte mit DB Defekten her. Der dritte Teil dieser Arbeit befasst sich mit der Untersuchung molekularer Strukturen auf Si(001)-(2x1):H. Die Erzeugung von Hexacen auf passivierten Silizium durch eine oberflächenunterstützte Reduktion wird gezeigt. Dieses Ergebnis ist eine neue Strategie für die Herstellung von PAK´s nach der Deoxygenierung und eröffnet neue Wege um funktionelle Moleküle auf diesem Substrat zu entwerfen. Zweitens zeige ich, dass Acetylbiphenyl (ABP) Moleküle eindimensionale Ketten auf dieser Oberfläche bilden. Diese interagieren über ihre Phenylringe, welche als leitender Kanal gesehen werden können. Zudem kann ein einzelnes ABP Molekül wie ein Schalter genutzt werden, da es reversibel einzelne DB´s durch Wasserstoffübertragung passivieren und depassivieren kann. Im letzten Teil dieser Arbeit wird das neue Tieftemperatur Vier-Sonden RTM, welches sich in CEMES-CNRS in Toulouse befindet, getestet. Diese Maschine ist für die Herstellung und Untersuchung von Geräten im molekularem Maßstab konstruiert worden. Zu diesem Zweck ist eine atomare Präzision für die verschiedenen Spitzen zur gleichen Zeit erforderlich und eine hohe Stabilität des Rastersondenmikroskops muss gewährleistet sein. Ich führe ein Manipulationsversuch an Molekülen durch, um die notwendige submolekulare Präzision zu testen. Dafür werden supramolekulare Anordnungen von ABP-Molekülen auf Au(111) abgebildet und die Strukturen mit jeder der vier Spitzen im lateralen Manipulationsmodus und durch Spannungpulse bewegt. Damit habe ich die Stabilität des Systems getestet und konnte zeigen, dass alle Spitzen des Systems unabhängig voneinander parallel arbeiten.:1 Introduction 2 Fundamentals of scanning tunneling microscopy 2.1 The working principle 2.2 Scanning tunneling spectroscopy 2.3 Manipulation modes 2.4 Modeling 3 Experimental setup, materials and methods 3.1 The scanning tunneling microscope 3.2 The Au(111) surface 3.3 Further experimental details 4 On-surface synthesis of molecules 4.1 Introduction 4.2 Generation of a periacene 4.3 Investigating a non-alternant PAH 4.4 Conclusion 5 The passivated silicon surface 5.1 Introduction 5.2 Preparation of passivated silicon 5.3 Characterization of Si(001)-(2x1):H 5.4 Tip-induced formation of dangling bonds 5.5 Conclusion 6 Organic molecules on passivated silicon 6.1 Introduction 6.2 Hexacene generated on passivated silicon 6.3 Acetylbiphenyl on passivated silicon 6.4 Conclusion 7 Testing a low temperature four-probe STM 7.1 Introduction 7.2 The four-probe STM 7.3 Performance test of the four-probe STM on Au(111) 7.4 Manipulation of ABP assemblies 7.5 Conclusion 8 Summary and outlook 9 Appendix 9.1 Dibromo-dimethyl-naphtalene on Au(111) 9.2 Epiminotetracene on Au(111) Bibliography Curriculum vitae Scientific contributions Acknowledgement Statement of authorship
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Book chapters on the topic "Si(001)-2x1"

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Michel, Enrique G., Maria C. Asensio, and Rodolfo Miranda. "Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1." In NATO ASI Series, 381–95. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2_25.

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Kawai, Hiroyo, Francisco Ample, Christian Joachim, and Mark Saeys. "Dangling-Bond Logic: Designing Boolean Logic Gates on a Si(001)-(2x1):H Surface." In Architecture and Design of Molecule Logic Gates and Atom Circuits, 149–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-33137-4_12.

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Ample, Francisco, Hiroyo Kawai, Kian Soon Yong, Mark Saeys, Kuan Eng Johnson Goh, and Christian Joachim. "Dangling-Bond Wire Circuits on a Si(001)-(2x1):H Surface with Their Contacting Nanopads." In Architecture and Design of Molecule Logic Gates and Atom Circuits, 163–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-33137-4_13.

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Conference papers on the topic "Si(001)-2x1"

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Kanasaki, Jun'ichi, and Katsumi Tanimura. "Laser-induced electronic desorption and structural changes on Si(001)-(2x1)." In High-Power Lasers and Applications, edited by Kouichi Murakami, David B. Geohegan, and Frank Traeger. SPIE, 2002. http://dx.doi.org/10.1117/12.459736.

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TAKAYANAGI, Kunio, Tomonobu NAKAYAMA, and Yasumasa TANISHIRO. "Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.s-ii-1.

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Harada, Yoshinao, Masaaki Niwa, Takaharu Nagatomi, and Ryuichi Shimizu. "Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy." In 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.a-4-6.

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Reports on the topic "Si(001)-2x1"

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Qian, Y., and M. J. Bedzyk. Structure and ad-atom thermal vibrational amplitude for the Ga/Si(001) 2x1 surface. Office of Scientific and Technical Information (OSTI), October 1994. http://dx.doi.org/10.2172/459394.

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