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Relevant bibliographies by topics / Si(100) surface

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Academic literature on the topic 'Si(100) surface'

Author: Grafiati

Published: 7 June 2025

Last updated: 2 August 2025

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Journal articles on the topic "Si(100) surface"

1

KATIRCIOĞLU, ŞENAY, SAED A. SALMAN, and ŞAKIR ERKOÇ. "MOLECULAR-DYNAMICS SIMULATION OF STEPPED Si(100) SURFACE." International Journal of Modern Physics C 11, no. 05 (2000): 999–1011. http://dx.doi.org/10.1142/s0129183100000833.

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We have investigated the relaxation of single and double layer stepped Si(100) surfaces depending on working cell size and heat treatment by MD simulation based on LJ–AT empirical potential energy function. It is found that smooth relaxation can be satisfied for both types of stepped Si(100) surfaces by continuous MD runs. The dependence of relaxation on the size of working cell is found only for single layer stepped Si(100) surface. The total potential energy calculation by MD shows that double layer Si(100) surface is more stable than the single layer stepped Si(100) surface.

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Pezoldt, Jörg, Thomas Stauden, Florentina Niebelschütz, Mohamad Adnan Alsioufy, Richard Nader, and Pierre M. Masri. "Tuning Residual Stress in 3C-SiC(100) on Si(100)." Materials Science Forum 645-648 (April 2010): 159–62. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.159.

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Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate near surface region into 3C-SiC(100) followed by an epitaxial growth step allows the manipulation of the residual strain. The morphology and the residual strain in dependence on the Ge coverage are only affected by the Ge quantity and not by the growth technique. The positive effect of the Ge coverage is attributed to changes in the morphology during the conversion process, as well as to a reduced lattice and thermal mismatch between SiC and Si in conseq

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Ong, C. K. "Surface diffusion of a Si adatom on a Si(100) surface." Journal of Physics and Chemistry of Solids 54, no. 2 (1993): 183–85. http://dx.doi.org/10.1016/0022-3697(93)90306-c.

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Kanashima, Takeshi, Yoshiaki Kurioka, Takaaki Imai, Hideaki Yamamoto, and Masanori Okuyama. "Characterization of F2Treatment Effects on Si(100) Surface and Si(100)/SiO2Interface." Japanese Journal of Applied Physics 36, Part 1, No. 4B (1997): 2460–63. http://dx.doi.org/10.1143/jjap.36.2460.

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Gavioli, Luca, Maria Grazia Betti, Carlo Mariani, et al. "Dynamics of the Si(100) surface." Surface Science 377-379 (April 1997): 360–64. http://dx.doi.org/10.1016/s0039-6028(96)01418-5.

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Ong, C. K. "Hydrogen chemisorption on Si (100) surface." Semiconductor Science and Technology 4, no. 6 (1989): 469–71. http://dx.doi.org/10.1088/0268-1242/4/6/008.

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Cheng, C. C., P. A. Taylor, R. M. Wallace, et al. "Hydrocarbon surface chemistry on Si(100)." Thin Solid Films 225, no. 1-2 (1993): 196–202. http://dx.doi.org/10.1016/0040-6090(93)90155-i.

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Hirose, F., and H. Sakamoto. "Thermal desorption of surface phosphorus on Si(100) surfaces." Surface Science 430, no. 1-3 (1999): L540—L545. http://dx.doi.org/10.1016/s0039-6028(99)00412-4.

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LU, Z. H., K. GRIFFITHS, and P. R. NORTON. "A REVIEW ON HYDROGEN ADSORPTION ON Si(100)." Modern Physics Letters B 07, no. 03 (1993): 155–61. http://dx.doi.org/10.1142/s0217984993000175.

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The paper reviews recent advances in the understanding of hydrogen adsorption on the Si (100)−(2 × 1) surface. Absolute measurement of deuterium coverage over a wide range of exposure allow us to identify different reaction process. Channeling analysis sees changes of surface structure down several layers below the surface on various hydride terminated Si(100) surfaces.

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Lu, Z. H., J. ‐M Baribeau, and D. J. Lockwood. "Surface segregation during Si/Gen/Si(100) interface formation." Journal of Applied Physics 76, no. 6 (1994): 3911–13. http://dx.doi.org/10.1063/1.357399.

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Dissertations / Theses on the topic "Si(100) surface"

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Nazir, Z. H. "Surface magnetism of Fe/Si(111) and Fe/Si(100)." Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362272.

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Aldis, Nihan. "ONIOM modeling of Si(100) surface structure and reactivity." abstract and full text PDF (UNR users only), 2009. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1464415.

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Li, Qiang. "Surface Chemistry of Hexacyclic Aromatic Hydrocarbons on (2x1) and Modified Surfaces of Si(100)." Thesis, University of Waterloo, 2004. http://hdl.handle.net/10012/1263.

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Room-temperature chemisorption of hexacyclic aromatic hydrocarbons on the 2x1, sputtered, oxidized and H-terminated Si(100) surfaces, as well as those upon post treatments of hydrogenation, oxidization and electron irradiation have been investigated by using thermal desorption spectrometry (TDS), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). This work focuses on the effects of the functional groups (phenyl, methyl, vinyl, heteroatom, and H atom) in the chemisorbed aromatic hydrocarbons (benzene, toluene, xylene isomers, styrene and pyridine) on organic functi

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Liu, Yong. "Desorption kinetics of surface species on Si(100)2X1 and Si(111)7X7 surfaces : theoretical and digital TPD studies." Thesis, University of Southampton, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239634.

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Zhang, Yunfeng. "The adsorption and desorption of allylamine on the Si(100) surface." abstract and full text PDF (UNR users only), 2008. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1456419.

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Neuburger, Monica Louise. "Dynamics of gas-surface reactions on Al(111) and Si(100) /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3055807.

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Satti, Didier. "Etude des interfaces Ta/Si (111) et Ta/Si (100) par différentes techniques d'analyse de surface." Aix-Marseille 2, 1989. http://www.theses.fr/1989AIX22043.

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Etude des proprietes structurales et electroniques des interfaces ta/si (111) et ta/si (100) elaborees sous ultra-vide. Ces systemes sont caracterises in situ par spectrometrie auger (aes), diffraction d'electrons lents (leed), spectroscopie de pertes d'energie d'electrons (eels), photoemission directe (ups), et ex situ par microscopie electronique a balayage

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Odasso, Stéphane. "Structure électronique de la surface Si(100) propre 2x1 et du système "prototype" Si(100) 2x1-Pb : spectroscopie de photoélectrons en rayonnement synchrotron." Aix-Marseille 1, 1996. http://www.theses.fr/1996AIX11006.

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Cette these associe une variete de techniques modernes d'analyse des surfaces, incluant celles exploitant les proprietes du rayonnement synchrotron. Nous avons pu corroborer la structure interfaciale du systeme pb/si(100). Une etude a. R. U. P. S revele que les marches de hauteur biatomique ne jouent pas de role significatif dans l'alteration des etats electroniques de surface du si(100)

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Ferguson, Bradley Alan. "Adsorption kinetics and dynamics in Si(100) epitaxial growth and oxidation /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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Brückner, Sebastian. "Atomic scale in situ control of Si(100) and Ge(100) surfaces in CVD ambient." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2014. http://dx.doi.org/10.18452/16894.

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In dieser Arbeit wurde die atomare Struktur von Si(100)- und Ge(100)-Oberflächen untersucht, die mit metallorganischer chemischer Gasphasenabscheidung (MOCVD) für anschließende Heteroepitaxie von III-V-Halbleitern präpariert wurden. An der III-V/IV Grenzfläche werden atomare Doppelstufen auf der Substratoberfläche benötigt, um Antiphasenunordnung in den III-V-Schichten zu vermeiden. Die MOCVD-Prozessgasumgebung beeinflusst die Domänen- und Stufenbildung der Si- und Ge(100)-Oberfläche sehr stark. Deswegen wurden in situ Reflexions-Anisotropie-Spektroskopie (RAS) und Ultrahochvakuum-(UHV)-basier

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Books on the topic "Si(100) surface"

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1912-, Grigull Ulrich, Straub J та Schiebener Peter, ред. Steam tables in SI-units: Concise steam tables in SI-units (student's tables) : properties of ordinary water substance up to 1000°ℓ°° össen von gewöhnlichem Wasser und Dampf bis 1000°C und 1000 bar. 3-тє вид. Springer, 1990.

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(Editor), Ulrich Grigull, Johannes Straub (Editor), and Peter Schiebener (Editor), eds. Steam Tables in SI-Units/Wasserdampftafeln: Concise Steam Tables in SI-Units (Student's Tables) - Properties of Ordinary Water Substance up to 1000 Degree ... vongewöhnlichem Wasser und Dampf bis 1000. 3rd ed. Springer, 1990.

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Guide for Use and Selection of Powder Coating Systems for Protective Purposes. AMPP, 2019. https://doi.org/10.5006/sspc-guide_25-2019.

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Scope This guide provides general information to assist facility owners and specifiers who select or specify powder coating systems to protect steel substrates from corrosion. It includes information about surface preparation and application procedures, and also about coating system durability and performance. Detailed descriptions of substrate selection and pretreatment are beyond the scope of this guide. Coating powder suppliers can provide advice regarding selection of specific primers and finish coats, and powder application and recovery equipment suppliers can assist with the selection of

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Book chapters on the topic "Si(100) surface"

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Andriamanantenasoa, I., J. P. Lacharme, and C. A. Sébenne. "Si(100) Surface Reordering upon Ga Adsorption." In Springer Series in Surface Sciences. Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73343-7_60.

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Pandey, K. C. "Reconstruction of the Si(100)-2x1 Surface." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_11.

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Carrière, B., J. P. Deville, M. Hanbücken, and G. Le Lay. "Synchrotron Radiation Study of the Au-Si(100) Interface." In Springer Series in Surface Sciences. Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73343-7_61.

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Riedel, Damien. "Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on the Si(100):H Surfaces." In On-Surface Atomic Wires and Logic Gates. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51847-3_1.

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Kawamura, T., N. Takahashi, T. Sakamoto, K. Sakamoto, and G. Hashiguchi. "RHEED Intensity Analysis on a Single Domain Si(100)-2 × 1." In Springer Series in Surface Sciences. Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73343-7_49.

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Kato, K., H. Kajiyama, S. Heike, T. Hashizume, and T. Uda. "Atomic layer oxidation of H terminated Si(100) surface." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_144.

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Yanovsky, A. S., and S. V. Kolomoets. "Vacancy Defect on a Si(100) Surface: Computer Simulation." In Microstructures, Mechanical Properties and Processes - Computer Simulation and Modelling. Wiley-VCH Verlag GmbH & Co. KGaA, 2005. http://dx.doi.org/10.1002/3527606157.ch14.

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Sordes, Delphine, Aurélie Thuaire, Patrick Reynaud, et al. "Nanopackaging of Si(100)H Wafer for Atomic-Scale Investigations." In On-Surface Atomic Wires and Logic Gates. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51847-3_2.

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Bozso, F., and Ph Avouris. "Thermal and Non-thermal Activation of Si(100) Surface Nitridation." In Kinetics of Interface Reactions. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72675-0_16.

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Iwami, M., M. Hirai, M. Kusaka, et al. "Surface and Interface Studies of SiC(Buffer-Layer)/Si(100)." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_30.

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Conference papers on the topic "Si(100) surface"

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Annamuradov, Berdimyrat, Zikrulloh Khuzhakulov, Jasminka Terzic, Mikhail Khenner, and Ali O. Er. "Surface Morphologies and crystallinities of a zirconium (Zr) thin film on Si(100) by pulsed laser deposition." In Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2025, edited by Andrei V. Kabashin, Maria Farsari, and Masoud Mahjouri-Samani. SPIE, 2025. https://doi.org/10.1117/12.3043635.

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Oanh, Vu Thi, Hiroshi Sugimoto, and Minoru Fujii. "Surface-enhanced Fluorescence by Mie Resonant Silicon Nanosphere Monolayer." In JSAP-Optica Joint Symposia. Optica Publishing Group, 2024. https://doi.org/10.1364/jsapo.2024.17a_a34_4.

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Surface-enhanced fluorescence (SEF) biosensors are vital for biomedical applications due to their exceptional sensitivity, enabling rapid and precise analyses. Compared to plasmonic resonators suffering from high Ohmic losses, dielectric Mie resonators exhibit lower losses and higher Q resonances. As a dielectric Mie resonator, silicon (Si) nanosphere (NS) with diameters of 100–250 nm is an almost ideal candidate for SEF biosensors due to their strong Mie resonances in the range of visible to near-infrared wavelengths. So far, Si nanostructure arrays have been fabricated with high precision by

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Walter, Marcel, Jeremiah Croshaw, Samuel Sze Hang Ng, Konrad Walus, Robert Wolkow, and Robert Wille. "Towards Atomic Defect-Aware Physical Design of Silicon Dangling Bond Logic on the H -Si $(100)-2\times 1$ Surface." In 2024 Design, Automation & Test in Europe Conference & Exhibition (DATE). IEEE, 2024. http://dx.doi.org/10.23919/date58400.2024.10546683.

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Habib, K., and A. Abdullah. "The Nonaqueous Inhibition of Fe-Co-B-Si Amorphous Electrodes: an A.C. Impedance Study in HCl Solutions." In CORROSION 1995. NACE International, 1995. https://doi.org/10.5006/c1995-95642.

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Abstract An electrochemical study on Fe-Co-B-Si amorphous electrodes has been conducted. The study was focused on determining the electrochemical impedance spectroscopy (EIS) of four different alloys of Fe-Co-B-Si in various HCl acid solutions. The A.C. impedance and the capacitance of Fe-Co-B-Si, Co-Fe-Ni-B-Si, Co-Fe-Mn-B-Si, and Co-Fe-Ni-Mo-B-Si alloys were obtained in 25, 50, 75 and 100% of HCl acid at room temperature. Electrochemical parameters, i.e., impedance, were found to vary depending on additions of the Ni, Mn, Ni-Mo to Fe-Co-B-Si alloys the acid concentration, and the nanoscopic s

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Ko, Saebom, Zhaoyi Dai, Xin Wang, Amy T. Kan, Wei Lee, and Mason B. Tomson. "Iron Sulfide Scale Control Using a Dispersant of Carboxymethylcellulose (CMC) in Sour Environment." In CONFERENCE 2022. AMPP, 2022. https://doi.org/10.5006/c2022-17630.

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Abstract When hydrogen sulfide gas is evolved in the presence of iron from various corrosion processes in downhole, iron sulfide can quickly precipitate. In the recent year, sulfide scale issues have been drawing lots of attention. Firstly, iron sulfide is one of the most or significantly unsolved deposition problem in oil and gas production. Secondly, iron sulfide has oleophilic nature so that it can be difficult to separate iron sulfide from oil phase during production processes. Polymeric dispersants have exhibited their feasibility to prevent the deposition of iron sulfide scales, but disp

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Yamamoto, H., K. Okumura, Takeshi Kanashima, and Masanori Okuyama. "Surface treatment effects on Si(111) and (100) surface structures and Si/SiO2 interface state." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300658.

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OYANAGI, Hiroyuki, Tsunenori SAKAMOTO, Kunihiro SAKAMOTO, Hirotaka YAMAGUCHI, and Takafumi YAO. "Ge/Si Monolayer Superlattices on Si(100) Studied by Surface-Sensitive EXAFS." In 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.s-e-5.

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Tao, M. "Fundamentals and applications of selenium-passivated Si[100] surface." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306300.

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Supplie, O., T. Hannappel, M. Pristovsek, and H. Doscher. "Interface and surface dielectric anisotropies of GaP/Si(100)." In 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM). IEEE, 2012. http://dx.doi.org/10.1109/iciprm.2012.6403340.

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Bottomley, D. J., G. Lüpke, and H. M. van Driel. "Second-harmonic probing of the Si(100) - SiO2 interface on flat and vicinal Si(100): interfacial structure and step binding sites." In Nonlinear Optics. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/nlo.1992.tha8.

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Of the various surfaces of crystalline silicon, Si (100) is industrially the most important and the formation of a stable oxide on this surface has allowed it to be used as the dominant material in modern semiconductor technology. Recently there has been a great deal of interest in steps on vicinal Si (100) since they are seen to play a central role in various chemical and physical processes including epitaxial growth, catalysis and oxide formation [1,2]. The study of stepped surfaces of Si (100) to date has been carried out primarily by conventional surface science techniques such as those ba

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Reports on the topic "Si(100) surface"

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Cheng, C. C., Jr Yates, and J. T. H-Induced Surface Restructuring on Si(100): Formation of Higher Hydrides. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada225499.

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Chen, X., B. P. Tonner, and J. Denlinger. Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/603550.

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Richter, M. The Si(100)-Sb 2x1 and Ge -(100) Sb on 2x1 Surfaces: A Multi-Technique Study (Thesis). Office of Scientific and Technical Information (OSTI), 2018. http://dx.doi.org/10.2172/1454102.

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Richter, M. The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/105652.

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Wampler, W. R. Segregation of copper to (100) and (111) silicon surfaces from internal Cu{sub 3}Si precipitates. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/414392.

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Taylor, S., J. Lever, K. Burgess, et al. Sampling interplanetary dust from Antarctic air. Engineer Research and Development Center (U.S.), 2022. http://dx.doi.org/10.21079/11681/43345.

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We built a collector to filter interplanetary dust particles (IDPs) larger than 5 µm from the clean air at the Amundsen Scott South Pole station. Our sampling strategy used long duration, continuous dry filtering of near-surface air in place of short duration, high-speed impact collection on flags flown in the stratosphere. We filtered ~107 m³ of clean Antarctic air through 20 cm diameter, 3 µm filters coupled to a suction blower of modest power consumption (5–6 kW). Our collector ran continuously for 2 years and yielded 41 filters for analyses. Based on stratospheric concentrations, we predic

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Crowley, David E., Dror Minz, and Yitzhak Hadar. Shaping Plant Beneficial Rhizosphere Communities. United States Department of Agriculture, 2013. http://dx.doi.org/10.32747/2013.7594387.bard.

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PGPR bacteria include taxonomically diverse bacterial species that function for improving plant mineral nutrition, stress tolerance, and disease suppression. A number of PGPR are being developed and commercialized as soil and seed inoculants, but to date, their interactions with resident bacterial populations are still poorly understood, and-almost nothing is known about the effects of soil management practices on their population size and activities. To this end, the original objectives of this research project were: 1) To examine microbial community interactions with plant-growth-promoting r

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