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Dissertations / Theses on the topic 'Si(100) surface'

Author: Grafiati

Published: 7 June 2025

Last updated: 2 August 2025

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1

Nazir, Z. H. "Surface magnetism of Fe/Si(111) and Fe/Si(100)." Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362272.

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2

Aldis, Nihan. "ONIOM modeling of Si(100) surface structure and reactivity." abstract and full text PDF (UNR users only), 2009. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1464415.

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3

Li, Qiang. "Surface Chemistry of Hexacyclic Aromatic Hydrocarbons on (2x1) and Modified Surfaces of Si(100)." Thesis, University of Waterloo, 2004. http://hdl.handle.net/10012/1263.

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Room-temperature chemisorption of hexacyclic aromatic hydrocarbons on the 2x1, sputtered, oxidized and H-terminated Si(100) surfaces, as well as those upon post treatments of hydrogenation, oxidization and electron irradiation have been investigated by using thermal desorption spectrometry (TDS), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). This work focuses on the effects of the functional groups (phenyl, methyl, vinyl, heteroatom, and H atom) in the chemisorbed aromatic hydrocarbons (benzene, toluene, xylene isomers, styrene and pyridine) on organic functi

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4

Liu, Yong. "Desorption kinetics of surface species on Si(100)2X1 and Si(111)7X7 surfaces : theoretical and digital TPD studies." Thesis, University of Southampton, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239634.

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5

Zhang, Yunfeng. "The adsorption and desorption of allylamine on the Si(100) surface." abstract and full text PDF (UNR users only), 2008. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1456419.

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6

Neuburger, Monica Louise. "Dynamics of gas-surface reactions on Al(111) and Si(100) /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3055807.

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7

Satti, Didier. "Etude des interfaces Ta/Si (111) et Ta/Si (100) par différentes techniques d'analyse de surface." Aix-Marseille 2, 1989. http://www.theses.fr/1989AIX22043.

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Etude des proprietes structurales et electroniques des interfaces ta/si (111) et ta/si (100) elaborees sous ultra-vide. Ces systemes sont caracterises in situ par spectrometrie auger (aes), diffraction d'electrons lents (leed), spectroscopie de pertes d'energie d'electrons (eels), photoemission directe (ups), et ex situ par microscopie electronique a balayage

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8

Odasso, Stéphane. "Structure électronique de la surface Si(100) propre 2x1 et du système "prototype" Si(100) 2x1-Pb : spectroscopie de photoélectrons en rayonnement synchrotron." Aix-Marseille 1, 1996. http://www.theses.fr/1996AIX11006.

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Cette these associe une variete de techniques modernes d'analyse des surfaces, incluant celles exploitant les proprietes du rayonnement synchrotron. Nous avons pu corroborer la structure interfaciale du systeme pb/si(100). Une etude a. R. U. P. S revele que les marches de hauteur biatomique ne jouent pas de role significatif dans l'alteration des etats electroniques de surface du si(100)

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9

Ferguson, Bradley Alan. "Adsorption kinetics and dynamics in Si(100) epitaxial growth and oxidation /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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10

Brückner, Sebastian. "Atomic scale in situ control of Si(100) and Ge(100) surfaces in CVD ambient." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2014. http://dx.doi.org/10.18452/16894.

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In dieser Arbeit wurde die atomare Struktur von Si(100)- und Ge(100)-Oberflächen untersucht, die mit metallorganischer chemischer Gasphasenabscheidung (MOCVD) für anschließende Heteroepitaxie von III-V-Halbleitern präpariert wurden. An der III-V/IV Grenzfläche werden atomare Doppelstufen auf der Substratoberfläche benötigt, um Antiphasenunordnung in den III-V-Schichten zu vermeiden. Die MOCVD-Prozessgasumgebung beeinflusst die Domänen- und Stufenbildung der Si- und Ge(100)-Oberfläche sehr stark. Deswegen wurden in situ Reflexions-Anisotropie-Spektroskopie (RAS) und Ultrahochvakuum-(UHV)-basier

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11

Alkunshalie, Talal. "Chemisorption of aromatic molecules on Si(100)-2x1 : an HREELS study." Thesis, University of Liverpool, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367288.

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12

Jacobson, Michael L. "The influence of phosphorus on the nature and reactivity of the Si(100) surface /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1997. http://wwwlib.umi.com/cr/ucsd/fullcit?p9804517.

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13

Naydenov, Borislav. "Vibrational spectroscopy studies of clean and adsorbate covered Si(100) surfaces surface phonon dispersions and adsorbate induced vibrations /." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965479234.

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14

Soukiassian, Laetitia. "Excitation par électrons tunnel de nano-objets individuels adsorbés sur la surface de Si(100)." Paris 11, 2003. http://www.theses.fr/2003PA112222.

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Les processus dynamiques induits dans des molécules par des électrons ou des photons ont été considérablement étudiés en phase gazeuse et en solution sur des assemblées de milliards de molécules. Avec le microscope à effet tunnel (STM) il devient possible d'envisager l'excitation d'une seule molécule par des électrons issus de la pointe. Nous avons d'abord étudié la désorption à l'échelle atomique d'H de la surface de Si(100)-H(2x1). La liaison Si-H est un système modèle pour l'étude des effets inélastiques des électrons tunnel en raison de la simplicité de sa structure atomique et électroniqu

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15

Lam, King-cheong, and 林景昌. "Direct determination of surface structures of C2H4 and C2H2 on si(100)by LEED Patterson inversion." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B41633830.

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16

Lam, King-cheong. "Direct determination of surface structures of C2H4 and C2H2 on si(100) by LEED Patterson inversion." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/hkuto/record/B41633830.

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17

Döscher, Henning. "Benchmarking surface signals when growing GaP on Si in CVD ambients." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2010. http://dx.doi.org/10.18452/16237.

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Diese Arbeit untersucht das Aufwachsen von dünnen GaP-Schichten auf Si(100)-Oberflächen mittels metallorganischer Gasphasenabscheidung (MOVPE) und die damit verbundene Entstehung von Antiphasendomänen (APDs). Die Vermessung der Si(100)-Substratoberfläche, der III-V/Si(100)-Grenzfläche und der abgeschiedenen GaP-Filme mit oberflächenempfindlichen Messverfahren dient der Etablierung APD-freier III-V-Heteroepitaxie auf Si(100). Die Präparation reiner Si(100)-Oberflächen frei von Sauerstoff in der MOVPE-Umgebung konnte durch Röntgenphotoelektronenspektroskopie (XPS) belegt werden. Vorwiegend doppe

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18

Zenichowski, Karl. "Quantum dynamical study of Si(100) surface-mounted, STM-driven switches at the atomic and molecular scale." Phd thesis, Universität Potsdam, 2012. http://opus.kobv.de/ubp/volltexte/2012/6215/.

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The aim of this thesis is the quantum dynamical study of two examples of scanning tunneling microscope (STM)-controllable, Si(100)(2x1) surface-mounted switches of atomic and molecular scale. The first example considers the switching of single H-atoms between two dangling-bond chemisorption sites on a Si-dimer of the Si(100) surface (Grey et al., 1996). The second system examines the conformational switching of single 1,5-cyclooctadiene molecules chemisorbed on the Si(100) surface (Nacci et al., 2008). The temporal dynamics are provided by the propagation of the density matrix in time via an

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19

Yu, Hui. "Low-energy electron and ion induced surface processes, studies of novel surface species on Cu(100) and Si(111)7x7 by electron-based materials analysis techniques." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ32868.pdf.

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20

Bellec, Amandine. "Transfert de charges à l'échelle atomique sur la surface de silicium (100) hydrogénée." Phd thesis, Université Paris Sud - Paris XI, 2008. http://tel.archives-ouvertes.fr/tel-00551912.

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Dans le cadre des études sur le contrôle électronique de molécules individuelles pour l'électronique mono-moléculaire, ce travail de thèse aborde la problématique du transfert de charges à l'échelle atomique. Les études, utilisant un microscope à effet tunnel (STM), ont été menées de manière privilégiée sur la surface de silicium (100) hydrogénée à basse température (5K). Ce travail démontre la possibilité d'activer à distance un bistable atomique, composé d'un dimère de silicium portant un unique atome d'hydrogène. La manipulation atomique s'effectue grâce à un transfert de charges au travers

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21

Zenichowski, Karl [Verfasser], and Peter [Akademischer Betreuer] Saalfrank. "Quantum dynamical study of Si(100) surface-mounted, STM-driven switches at the atomic and molecular scale / Karl Zenichowski. Betreuer: Peter Saalfrank." Potsdam : Universitätsbibliothek der Universität Potsdam, 2012. http://d-nb.info/1029603413/34.

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22

Nielsen, Jon F. "Energetically and Kinetically Driven Step Formation and Evolution on Silicon Surfaces." The Ohio State University, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=osu998579834.

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23

Sordes, Delphine. "Imagerie, manipulation et contact électronique atome par atome sur la surface Si(100) : H avec le microscope à effet tunnel basse température à 4 pointes." Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30048/document.

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La construction de circuits électroniques de section atomique est l'un des grands défis de la nanoélectronique ultime. Pour construire un circuit électronique atomique, il faut d'abord mettre au point l'instrument de construction puis choisir la surface-support stabilisant ce circuit. Sur la surface d'Au(111) préparée en ultra vide, nous avons mis en œuvre et stabilisé le tout premier LT-UHV-4 STM. Ce microscope à 4 pointes STM balayant en même temps et indépendamment une même surface a été construit pour le CEMES par la société ScientaOmicron. Sur l'Au(111), nous avons reproduit tous les résu

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24

Mekhiche, Mouhoub. "Introduction de la texture cubique {100}<001> dans les dispositifs électrotechniques : de la métallurgie à la modélisation." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0019.

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La principale plage de progression des performances magnétiques des aciers magnétiques FeSi est à l'heure actuelle la texture de ces matériaux. Il est alors important de savoir évaluer l'intérêt de telle ou telle texture pour l'électrotechnique, afin de connaître les marges de progrès existant encore dans la conception de différents dispositifs et d'estimer par là même s'il est intéressant ou non de mettre au point métallurgiquement telle texture. Le travail présenté a pour ambition de mettre en place un tel outil intégré d'étude et d'évaluation d'une texture, relativement aux contraintes du g

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25

Ueno, Leonardo Tsuyoshi. "Uma investigação teórica de aglomerados de silício e nitrogênio e da incorporação de átomos de nitrogênio na superfície do silício." Universidade de São Paulo, 2002. http://www.teses.usp.br/teses/disponiveis/46/46132/tde-19092018-111837/.

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Nesta tese, utilizamos técnicas de química quântica para o estudo de sistemas contendo átomos de silício e nitrogênio. Nesse contexto, o trabalho aqui apresentado procurou concentrar-se em três tópicos principais: aglomerados de silício e nitrogênio, a superfície Si(100) e a interação de um átomo de nitrogênio com essa superfície. Estudamos inicialmente os aglomerados de fórmula SiNN e Si3N2, onde procuramos caracterizar de forma rigorosa a estabilidade e a natureza das ligações químicas das várias espécies. Com relação ao sistema SiNN, os resultados utilizando cálculos de alto nível mostraram

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26

Papageorgopoulos, Aristomenis. "Adsorption of elemental S and Cs on si (100) 2x1 surfaces." DigitalCommons@Robert W. Woodruff Library, Atlanta University Center, 1995. http://digitalcommons.auctr.edu/dissertations/3096.

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This study examined the adsorption of elemental S onclean Si(lOO) surfaces and Cs on s- covered Si(lOO) surfaces. The study was performed in an UHV system using LEED, AES and WF measurements. The objective was the protection of the\ surface against degradation. The s adsorption process may be enhanced by the addition of Cs. Results indicate that S adsortion forms: a hemisulfide, (~0.5 ML) with a (2xl) structure and a monosulfide, (~1 ML) with a (lxl) structure. Adsorption of Cs on clean Si(100)2xl reduces the WF to a minimum value with a subsequent increase towards the value of metallic Cs. Pr

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27

Buchholz, Florian. "Metal surface contamination in c-Si solar cell processing." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2016. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-203660.

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Fe und Cu wurden als Schlüsselspezies für die Betrachtung von Oberflächenkontamination in der Prozessierung von c-Si-Solarzellen identifiziert. Studien mit gezielt aufgebrachten Metallkonzentrationen vor verschiedenen Passivierungs- und Diffusionsprozessschritten ergaben relativ hohe kritische Werte für Cu, außer bei thermischer Oxidation. Niedrige Werte wurden für beide Elemente vor Hochtemperaturschritten im n-Typ-Hocheffizienzprozess beobachtet, wobei sich die B-Diffusion als etwas weniger empfindlich darstellte. Temporäre Gettereffekte für Fe (in p-Typ-Si) und Cu (in n-Typ-Si) wurden beoba

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28

Coustel, Romain. "Mécanismes de croissance, structures et propriétés optiques d'assemblages organiques sur surfaces Si(100)-2x1 nue ou passivée." Paris 6, 2008. http://www.theses.fr/2008PA066569.

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Notre étude porte sur la réalisation de matériaux hybrides obtenus par dépôts organiques sur Si(100)-2x1. La réactivité de cette surface permet le greffage covalent de molécules organiques. Dans ce cadre, nous avons déterminé par spectroscopie NEXAFS (Near-Edge X-ray Absorption Fine Structure) la géométrie d’adsorption de la pyridine pour des dépôts à température ambiante (Tamb) et à basses températures. Par ailleurs, nous avons suivi par SDRS (Surface Differential Reflectance Spectroscopy) la cinétique d’adsorption de l’éthylène et du phénylacétylène ainsi que la cinétique de la coadsorption

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29

Ciampi, Simone Chemistry Faculty of Science UNSW. "A versatile and modular approach to modify silicon surfaces for electrochemical applications." Awarded by:University of New South Wales. Chemistry, 2009. http://handle.unsw.edu.au/1959.4/44630.

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The thesis presents the research results obtained while studying novel chemical strategies for preparing Si(100)-based electrochemical platforms suitable for aqueous environments. A primary research aim was the preparation of well-passivated Si(100) surfaces amenable to further chemical derivatization. The preparation and functionalization of alkyne-terminated alkyl monolayers on Si(100) surfaces using the Huisgen 1,3-dipolar ???click??? cycloaddition of azides with surface-bound acetylenes is reported and shown to be a versatile, experimentally simple, chemically unambiguous modular approach

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30

Vlajić, Marina [Verfasser], Karola [Akademischer Betreuer] Rück-Braun, Karola [Gutachter] Rück-Braun, and Petra [Gutachter] Tegeder. "Photoswitchable Monolayers on Si(111) and Si(100) Surfaces / Marina Vlajić ; Gutachter: Karola Rück-Braun, Petra Tegeder ; Betreuer: Karola Rück-Braun." Berlin : Technische Universität Berlin, 2018. http://d-nb.info/1170776833/34.

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31

Bush, Tamara Louise Deidre. "The reaction of oxygen and nitrogen molecular beams with clean and alkali-metal covered Si(100) surfaces." Thesis, Imperial College London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307428.

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32

Paszuk, Agnieszka [Verfasser], Thomas [Akademischer Betreuer] Hannappel, Gerhard [Gutachter] Gobsch, and Regina [Gutachter] Paszkiewicz. "Controlling Si(111) and Si(100) surfaces for subsequent GaP heteroepitaxy in CVD ambient / Agnieszka Paszuk ; Gutachter: Gerhard Gobsch, Regina Paszkiewicz ; Betreuer: Thomas Hannappel." Ilmenau : TU Ilmenau, 2018. http://d-nb.info/1178133133/34.

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33

Brückner, Sebastian [Verfasser], Recardo [Akademischer Betreuer] Manzke, Thomas [Akademischer Betreuer] Hannappel, and Wolf Gero [Akademischer Betreuer] Schmidt. "Atomic scale in situ control of Si(100) and Ge(100) surfaces in CVD ambient / Sebastian Brückner. Gutachter: Recardo Manzke ; Thomas Hannappel ; Wolf Gero Schmidt." Berlin : Humboldt Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2014. http://d-nb.info/1047383373/34.

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34

Armstrong, Jeffrey Lee. "Reaction of carbonyl-and nitrogen-containing molecules on Si(100) and fluxless solder re-flow on polycrystalline Cu surfaces /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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35

Dogbe, John Kofi. "Comparing cluster and slab model geometries from density functional theory calculations of si(100)-2x1 surfaces using low-energy electron diffraction." abstract and full text PDF (free order & download UNR users only), 2007. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3258835.

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36

Dalpian, Gustavo Martini. "A natureza de defeitos de Bulk e na superfície de semicondutores." Universidade de São Paulo, 2003. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-09082012-202357/.

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Utilizando métodos de primeiros princípios, baseados na Teoria do Funcional da Desidade, investigamos, de forma sistemática, problemas de interesse na física de semicondutores: (i) A liga SixGe1-x: observa-se um pequeno desvio da linearidade, para o parâmetro de rede da liga, em função da concentração, sendo que as distâncias entre átomos de Ge são as que mais variam. O comportamento de vacâncias nessa liga se mostrou intermediário entre o Ge e o Si, e a energia de formação (EF) das vacâncias variou entre 2,06 eV e 2,90 eV, dependendo da vizinhança dessa. Propusemos um modelo para a difusão de

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37

Jordan, Rainer, Tao Zhang, Yunhao Du, Felix Müller, and Ihsan Amin. "Surface-initiated Cu(0) mediated controlled radical polymerization (SI-CuCRP) using a copper plate." Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-188989.

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Surface engineering with polymer brushes has become one of the most versatile techniques to tailor surface properties of substrates for a broad variety of (bio-) technological applications. We report on a new facile approach to prepare defined and dense polymer brushes on planar substrates by surface-initiated Cu(0) mediated controlled radical polymerization (SI-CuCRP) of numerous vinyl monomers using a copper plate at room temperature. The fabrication of a variety of homo-, block, gradient and patterned polymer brushes as well as polymer brush arrays is demonstrated. The SI-CuCRP was found to

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38

SPIESS, LAURENT. "Contribution a l'etude des proprietes structurales des surfaces de si(100) et ge(100) propres et recouvertes de metal alcalin (na, k), par theorie ab initio utilisant la fonctionnelle de densite avec simulation par agregat." Paris 6, 1994. http://www.theses.fr/1994PA066263.

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Nous avons etudie les reconstructions des surfaces de si(100)2x1 et ge(100)2x1, ainsi que l'adsorption de metaux alcalins (na,k) sur ces surfaces, a l'aide d'une approche theorique ab initio utilisant la fonctionnelle de densite. Les proprietes structurales de ces surfaces et interfaces, qui ont une grande importance autant sur le plan fondamental que technologique, ont ete determinees a l'echelle atomique. Des differences importantes ont ete mise en evidence entre les surfaces propres de si(100)2x1 et ge(100)2x1, en particulier en ce qui concerne leur comportement vis-a-vis d'adsorbats et la

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39

"Ab initio studies of reactions on Si(100), Ge(100) and Al(111)." Thesis, 2005. http://library.cuhk.edu.hk/record=b6074052.

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Ge(100) has atomic and electronic structures quite similar to those of Si(100). As a comparison, we have studied the oxidation of Ge(100) surface. Our comparison of the initial oxidation of Ge(100) with that of Si(100) by molecular oxygen shows that the precursor-mediate mechanism and direct adsorption mechanism are common to both systems. (Abstract shortened by UMI.)<br>It is often been argued that a direct [2+2] addition of unsaturated hydrocarbons to the Si-Si dimer is symmetry forbidden, according to the Woodward-Hoffmann rule. This view is now challenged by our calculations on the reactio

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40

Chen, Shun-Ming, and 陳舜民. "Au-induced Defects on Si(100)-2×1 Surface." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/cp63j4.

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碩士<br>國立中正大學<br>物理學系暨研究所<br>102<br>By using scanning tunneling microscope (STM), we have observed three types of defects on clean , well-ordered Si(100)-2×1 surfaces . These defects are compared with those structures of a surface where a small amount of Au has been deposited. Such comparison gives us a way of identifying structures induced by Au deposition. Au atom have been deposited on the Si(100)-21 surface at 600C with coverages ranging between x.x and x.x ML. After deposition, missing dimer defects have been observed and, as the Au coverage increases, those missing dimer defects tend to

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41

Chiu, Chi-Hsiung, and 邱祺雄. "The structure of KCl on the Si(100) surface." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/88092346684141568461.

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42

Lim, Tingbin. "Studies in Physisorption and Chemisorption on Si(100)-2x1." Thesis, 2010. http://hdl.handle.net/1807/26288.

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Scanning Tunneling Microscopy (STM) has been used to study the physisorption and chemisorption behaviour for three simple organic haloalkanes; 1,5 Dichloropentane (DCP), Bromomethane (CH3Br) and Chloromethane (CH3Cl)) on Si(100) 2x1, at temperatures ranging from 270 K to room temperature. The results were interpreted by Density Functional Theory (DFT) performed by collaborators at McGill University and the University of Liverpool. Physisorbed molecules of DCP were found to self assemble into stable lines aligned predominantly perpendicular to the Si dimer pair rows on the surface. A novel mech

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43

Wei-Chi, Su, and 蘇威齊. "Structural Transitions introduced by Au deposition on Si(100) surface." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/79539r.

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碩士<br>國立中正大學<br>物理學系暨研究所<br>102<br>We have deposited Au at different temperatures (250˚C and 400˚C) on a (5×3) reconstructed surface and a surface consisting of both (5×3) and c(8×2) reconstructions, where both surfaces are produced by depositing Au on Si(100) surfaces. Scanning tunneling microscopy (STM) has been employed to study the surface morphology. We find that islands form on the reconstructed surfaces and the topmost layers on the islands show the signature of a c(8×2) structure. After heating the sample to higher temperatures, we find that the islands have disappeared. Furthermore, b

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Pan, shiang-yuan, and 潘祥元. "Observation og Si-Ge Place Exchange on the Cl-terminated Ge/Si(100) surface." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/90696478775478779855.

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碩士<br>國立交通大學<br>物理研究所<br>89<br>The thesis describes the observation of the exchange of surface Ge-Cl and Si-Cl bonds on the Cl-terminated Ge/Si(100) surface. We grew 0.4 ML、1.2 ML and 2.0 ML Ge on the clean Si(100) surface by atomic-layer epitaxy using Ge2H6 gas source. After Cl2 saturtation each surface atom bond to one Cl. Upon annealing the Ge/Si(100)：Cl sample to higher temperatures, synchrotron radiation was used to obtain the Si 2p、Ge 3d and Cl 2p photoemission spectra. Between 325 and 510 K, the Ge/Si(100)︰Cl surface remains largely unchanged. When the samples were anneale

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Ali, Muhammad Y. "Passivation of Si (100) surface and fabrication of doping-free MOSFET." 2008. http://hdl.handle.net/10106/1019.

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Lin, Wei-Hsiang, and 林偉翔. "Phase transitions of Pb on the Si(100)-2×1 surface." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/58854014118180052563.

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碩士<br>國立交通大學<br>電子物理系所<br>96<br>The behavior of Pb deposited on a Si(100)-2×1 surface at room temperature and low temperature was observed by ultrahigh vacuum scanning tunneling microscope. Low temperature phases of (2×2), (2×1), (4×4) and a new “meta-stable phase” were identified as Pb coverage was increased from 0.3 to about 3ML. As the temperature is continuously increased to room temperature, the meta-stable phase is transformed into c(4×4) phase. We have made a STM movie to proof this phase transition. Moreover, we have constructed an atomic model of the meta-stable phase.

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"First principles studies on molecular adsorption on Si(100) surface: 分子在硅(100)表面吸附的第一性原理研究". 2014. http://library.cuhk.edu.hk/record=b6115882.

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硅對現今科技至關重要。而有機物吸附於硅表面可能大大擴展硅的用途。在本論文中，我採用密度泛函理論研究了六種分子於硅表面的反應。本論文大致可分為四部分。<br>第一部分包含四個分子（吡嗪、吡啶、嘧啶與1,3,5-三氮嗪）的吸附研究。它們都擁有類似於苯的結構而環中又包含氮原子。分子可以用氮原子與表面形成配位鍵並作為進一步反應的前體故其反應更為容易預測。而反應通常只消除π 鍵而不會使分子分解這使得分子可以在平衡狀態下與表面生成最為穩定的結構。此兩種特性使它們成為硅表面吸附的絶佳研究對象。不同的實驗都顯示出吡嗪於硅表面只會生成Cross-row bridge 結構加熱硅表面更會促進納米線的生成。過往的計算無法解釋實驗結果而我的計算表明范德華力對導出正確計算結果非常重要加入范德華力的修正可以同時解釋單一產物與納米線的生成。吡啶的吸附實驗結果相比之下較為複雜。低溫下的吸附與飽和只生成兩種產物可是室溫下的實驗卻顯示多種產物並存於表面。加入范德華力的計算結果指出覆蓋度和溫度與吸附密切相關並指出對低溫下形成的飽和表面加溫可能促使納米線的生成。而於室溫下吡啶可進入多條反應路徑致使多種產物於表面並存。基於范德華力對這兩個分子的顯著影響我又將此效應加諸於嘧啶與1,3,5-三氮嗪的吸附研究。結果表明於低覆蓋度與低溫下它們只生成Double-dative 產物。然而增加覆蓋度會使Double-dative 的能

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Wen-Chi, Chou, and 周文祺. "Theoretical studies of adsorption of fluorocarbons on Ag(111) surface and on Si(100) surface." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/42507055304992052524.

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碩士<br>淡江大學<br>化學學系<br>91<br>Density Functional Theory with ultrasoft pseudopotential, plane wave basis sets and supercell models were used to simulate dissociative chemisorption of CF3I onto Si(100) surface and the Fischer-Tropsch synthesis for CF2=CH2on Ag(111) surface. Activation energies and relative structural variations were calculated through partial structural constraint path minimization method. Computational result shows that CF3I dissociative adsorption onto Si(100) has lower activation energy and higher sticking probability than its CF3Cl counterpart. We attribute the high chemisorp

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Chou, Yu-Lin, and 周佑霖. "Identification of Ge Atomic Distribution and Surface Reactions on the Cl:Ge/Si(100)-2x1 Surface." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/06910606439902375744.

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碩士<br>國立交通大學<br>物理研究所<br>90<br>Growth of Ge on Si substrate is an prototipical system for the study of strained semiconductor heteroepitaxy. However, there are no effective ways to identify individual Ge atoms from Si on the Ge/Si(100)-2x1 surface. On the chlorine saturated Ge/Si(100)-2x1 surface, with the help of the different electron density of state, Ge atoms are identified from Si clearly in the STM images. Through the comparison of the mathematical simulation and the data counted on the STM images, we proved that either atom in a Si-Si dimer and the Si atom in a Si-Ge dimer is equally li

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"First principle studies on oxidation of Al₁₃ anion cluster and hydrogen desorption from hydrogenated Si(100) surface." Thesis, 2010. http://library.cuhk.edu.hk/record=b6074840.

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Hydrogen desorption mechanisms on hydrogenated silicon surface such as H/Si(1 00)-1x1, H/Si(l00)-2xl and H/Si(100)-3x1 surfaces have been explored by theoretical calculations with slab models. Similar desorption mechanisms have been identified for three hydrogenated surfaces and the calculated barriers were in agreement with experimental values. More interestingly, a common bridge structure has been identified as an intermediate. Its unique electronic structure is analyzed in detail. The identification of such a structure provides an alternative account for previous experimental results on STM

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