Log in

Relevant bibliographies by topics / Si(100) surface / Journal articles

To see the other types of publications on this topic, follow the link: Si(100) surface.

Journal articles on the topic 'Si(100) surface'

Author: Grafiati

Published: 7 June 2025

Last updated: 2 August 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Si(100) surface.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

KATIRCIOĞLU, ŞENAY, SAED A. SALMAN, and ŞAKIR ERKOÇ. "MOLECULAR-DYNAMICS SIMULATION OF STEPPED Si(100) SURFACE." International Journal of Modern Physics C 11, no. 05 (2000): 999–1011. http://dx.doi.org/10.1142/s0129183100000833.

Full text

Abstract:

We have investigated the relaxation of single and double layer stepped Si(100) surfaces depending on working cell size and heat treatment by MD simulation based on LJ–AT empirical potential energy function. It is found that smooth relaxation can be satisfied for both types of stepped Si(100) surfaces by continuous MD runs. The dependence of relaxation on the size of working cell is found only for single layer stepped Si(100) surface. The total potential energy calculation by MD shows that double layer Si(100) surface is more stable than the single layer stepped Si(100) surface.

APA, Harvard, Vancouver, ISO, and other styles

2

Pezoldt, Jörg, Thomas Stauden, Florentina Niebelschütz, Mohamad Adnan Alsioufy, Richard Nader, and Pierre M. Masri. "Tuning Residual Stress in 3C-SiC(100) on Si(100)." Materials Science Forum 645-648 (April 2010): 159–62. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.159.

Full text

Abstract:

Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate near surface region into 3C-SiC(100) followed by an epitaxial growth step allows the manipulation of the residual strain. The morphology and the residual strain in dependence on the Ge coverage are only affected by the Ge quantity and not by the growth technique. The positive effect of the Ge coverage is attributed to changes in the morphology during the conversion process, as well as to a reduced lattice and thermal mismatch between SiC and Si in conseq

APA, Harvard, Vancouver, ISO, and other styles

3

Ong, C. K. "Surface diffusion of a Si adatom on a Si(100) surface." Journal of Physics and Chemistry of Solids 54, no. 2 (1993): 183–85. http://dx.doi.org/10.1016/0022-3697(93)90306-c.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Kanashima, Takeshi, Yoshiaki Kurioka, Takaaki Imai, Hideaki Yamamoto, and Masanori Okuyama. "Characterization of F2Treatment Effects on Si(100) Surface and Si(100)/SiO2Interface." Japanese Journal of Applied Physics 36, Part 1, No. 4B (1997): 2460–63. http://dx.doi.org/10.1143/jjap.36.2460.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Gavioli, Luca, Maria Grazia Betti, Carlo Mariani, et al. "Dynamics of the Si(100) surface." Surface Science 377-379 (April 1997): 360–64. http://dx.doi.org/10.1016/s0039-6028(96)01418-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Ong, C. K. "Hydrogen chemisorption on Si (100) surface." Semiconductor Science and Technology 4, no. 6 (1989): 469–71. http://dx.doi.org/10.1088/0268-1242/4/6/008.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Cheng, C. C., P. A. Taylor, R. M. Wallace, et al. "Hydrocarbon surface chemistry on Si(100)." Thin Solid Films 225, no. 1-2 (1993): 196–202. http://dx.doi.org/10.1016/0040-6090(93)90155-i.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Hirose, F., and H. Sakamoto. "Thermal desorption of surface phosphorus on Si(100) surfaces." Surface Science 430, no. 1-3 (1999): L540—L545. http://dx.doi.org/10.1016/s0039-6028(99)00412-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

LU, Z. H., K. GRIFFITHS, and P. R. NORTON. "A REVIEW ON HYDROGEN ADSORPTION ON Si(100)." Modern Physics Letters B 07, no. 03 (1993): 155–61. http://dx.doi.org/10.1142/s0217984993000175.

Full text

Abstract:

The paper reviews recent advances in the understanding of hydrogen adsorption on the Si (100)−(2 × 1) surface. Absolute measurement of deuterium coverage over a wide range of exposure allow us to identify different reaction process. Channeling analysis sees changes of surface structure down several layers below the surface on various hydride terminated Si(100) surfaces.

APA, Harvard, Vancouver, ISO, and other styles

10

Lu, Z. H., J. ‐M Baribeau, and D. J. Lockwood. "Surface segregation during Si/Gen/Si(100) interface formation." Journal of Applied Physics 76, no. 6 (1994): 3911–13. http://dx.doi.org/10.1063/1.357399.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

KOŁASIŃSKI, KURT W. "DYNAMICS OF HYDROGEN INTERACTIONS WITH Si(100) AND Si(111) SURFACES." International Journal of Modern Physics B 09, no. 21 (1995): 2753–809. http://dx.doi.org/10.1142/s0217979295001038.

Full text

Abstract:

Experimental and theoretical work probing the dynamics of dissociative adsorption and recombinative desorption of hydrogen at Si(100) and Si (111) surfaces is reviewed. Whereas molecular beam experiments demonstrate that molecular excitations do aid in overcoming a substantial activation barrier toward adsorption, desorbed molecules are found to have a total energy content only slightly above the equilibrium expectation at the surface temperature. A consistent interpretation of the ad/desorption dynamics is arrived at which requires neither a violation of microscopic reversibility nor defect-m

APA, Harvard, Vancouver, ISO, and other styles

12

Semond, F., L. Douillard, P. Soukiassian та ін. "Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology". Surface Review and Letters 05, № 01 (1998): 207–11. http://dx.doi.org/10.1142/s0218625x98000384.

Full text

Abstract:

We investigate single domain β-SiC(100) thin film surfaces epitaxially grown on a vicinal (4°) Si(100) surface by atom-resolved (filled and empty states) scanning tunneling microscopy (STM). Contrary to previous beliefs, we observe high quality surfaces having a low density of defects. The β-SiC(100)-(3×2) surface, which is a Si-rich surface, is achieved by sequences of Si deposition and surface annealings. This results in the growth and coalescence of large Si islands and/or vacancies islands having the 3×2 array. Our results indicate the formation of asymmetric Si-Si dimers all tilted in the

APA, Harvard, Vancouver, ISO, and other styles

13

Jayaram, Ganesh. "UHV-TED study of clean Si(100) surface structures." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 1002–3. http://dx.doi.org/10.1017/s0424820100150848.

Full text

Abstract:

Detailed information about the structure of silicon surfaces is very important prior to deposition of metal contacts. Though transmission electron diffraction is sensitive to the atomic structures of both the surface and the bulk, under appropriate conditions, information on the structure of the surface can be obtained from a careful analysis of the diffraction spot intensities.Since Si(100) surface is highly reactive (sticking coefficient for water = 1), preparation and observation of clean surfaces necessitates ultra-high vacuum (UHV) conditions. A thin sample of Si(100) (B doped to 1 ohm-cm

APA, Harvard, Vancouver, ISO, and other styles

14

Koo, Ja-Yong, Jae-Yel Yi, Chanyong Hwang, et al. "Atomic Structure of Si(100) Surfaces." Surface Review and Letters 05, no. 01 (1998): 1–4. http://dx.doi.org/10.1142/s0218625x98000037.

Full text

Abstract:

The structure of a clean Si(100) and a Ni-contaminated si(100) was investigated using scanning tunneling microscopy. The clean Si (100) shows the 2 × 1 reconstruction with a surface dimer vacancy density less than 2%. The major defects on the clean surface are a single dimer vacancy and the C defect. A small amount of Ni on the surface drastically changes the surface structure and produces 2 × n reconstructions. The formation of vacancy clusters is favored. A rebonded SB step is preferred on the clean Si(100) while a nonrebonded SB step with a split-off dimer is mainly observed on the Ni-conta

APA, Harvard, Vancouver, ISO, and other styles

15

D'Angelo, M., H. Enriquez, M. Silly, et al. "H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization." Materials Science Forum 457-460 (June 2004): 399–402. http://dx.doi.org/10.4028/www.scientific.net/msf.457-460.399.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Zhang, Z. "B/Si(100) surface: Atomic structure and epitaxial Si overgrowth." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 4 (1996): 2684. http://dx.doi.org/10.1116/1.589004.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Gryko, J., and R. E. Allen. "Dimerization and adsorption of Si on the Si(100) surface." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9, no. 3 (1991): 656–58. http://dx.doi.org/10.1116/1.577383.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Есин, М. Ю., А. С. Дерябин, А. В. Колесников та А. И. Никифоров. "Изучение кинетики сближения ступеней поверхности Si(100)". Физика твердого тела 65, № 2 (2023): 173. http://dx.doi.org/10.21883/ftt.2023.02.54287.476.

Full text

Abstract:

In this work, the convergence kinetics investigations of the SA and SB steps on Si(100) substrates with inclination 0.5o and 0.1o were carried out. Analysis of the time dependence of reflection high-energy electron diffraction (RHEED) intensity was used to establish the growth kinetics character on vicinal Si(100) surfaces. It is shown that, in a Si flow at the growth rate of 0.37 ML/s, the step convergence velocity has a decreasing exponential dependence with the temperature increase. It is determined that the single-domain surface formation velocity increases with an increase in the terrace

APA, Harvard, Vancouver, ISO, and other styles

19

LEE, GUN-DO, C. Z. WANG, Z. Y. LU, and K. M. HO. "ADDIMER DIFFUSIION ON THE Si(100) SURFACE." Surface Review and Letters 06, no. 06 (1999): 1015–23. http://dx.doi.org/10.1142/s0218625x99001098.

Full text

Abstract:

Diffusion of silicon addimer along the trough and from the trough to the top of dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment-dependent tight-binding silicon potential and by ab initio calculations using the Car–Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. These new pathways have energy barriers in excellent agreement with experiment data and are more energetically favorable than other diffusion pathways studied previously.

APA, Harvard, Vancouver, ISO, and other styles

20

Gavioli, Luca, Maria Grazia Betti, and Carlo Mariani. "Dynamics-Induced Surface Metallization of Si(100)." Physical Review Letters 77, no. 18 (1996): 3869–72. http://dx.doi.org/10.1103/physrevlett.77.3869.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Condorelli, Guglielmo G., Alessandro Motta, Maria Favazza, et al. "Grafting Cavitands on the Si(100) Surface." Langmuir 22, no. 26 (2006): 11126–33. http://dx.doi.org/10.1021/la060682p.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Gryko, Jan, and Roland E. Allen. "Energy surface and dynamics of Si(100)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 4 (1992): 2052–54. http://dx.doi.org/10.1116/1.578023.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Ma, Li, Jianguang Wang, Shuyi Wei, and Guanghou Wang. "Adsorption of Ni on Si(100) surface." Vacuum 77, no. 3 (2005): 337–41. http://dx.doi.org/10.1016/j.vacuum.2004.12.003.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Hashizume, T., S. Heike, M. I. Lutwyche, S. Watanabe, and Y. Wada. "Atom structures on the Si(100) surface." Surface Science 386, no. 1-3 (1997): 161–65. http://dx.doi.org/10.1016/s0039-6028(97)00339-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Wei, Shu-yi, Wei Li, Fang Zhang, and Xu Zhao. "Adsorption of Ag on Si(100) surface." Physica B: Condensed Matter 390, no. 1-2 (2007): 191–95. http://dx.doi.org/10.1016/j.physb.2006.08.028.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Ishidzuka, S., Y. Igari, T. Takaoka, and I. Kusunoki. "Nitridation of Si(100) surface with NH3." Applied Surface Science 130-132 (June 1998): 107–11. http://dx.doi.org/10.1016/s0169-4332(98)00034-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Ide, T., T. Nishimori, and T. Ichinokawa. "Surface structures of Si(100)-Al phases." Surface Science 209, no. 3 (1989): 335–44. http://dx.doi.org/10.1016/0039-6028(89)90079-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Ide, T., T. Nishimori, and T. Ichinokawa. "Surface structures of Si(100)-Al phases." Surface Science Letters 209, no. 3 (1989): A43. http://dx.doi.org/10.1016/0167-2584(89)90616-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Zheng, X. M., and P. V. Smith. "Hydrogen chemisorption on the Si(100) surface." Surface Science Letters 279, no. 1-2 (1992): A105. http://dx.doi.org/10.1016/0167-2584(92)90213-o.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Zheng, X. M., and P. V. Smith. "Hydrogen chemisorption on the Si(100) surface." Surface Science 279, no. 1-2 (1992): 127–36. http://dx.doi.org/10.1016/0039-6028(92)90749-v.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Gavioli, Luca, Maria Grazia Betti, Antonio Cricenti, and Carlo Mariani. "Surface electronic structure at Si(100)-(2x1)." Journal of Electron Spectroscopy and Related Phenomena 76 (December 1995): 541–45. http://dx.doi.org/10.1016/0368-2048(95)02466-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

WATANABE, Hayato, Masanori SHINOHARA, Yasuo KIMURA, Mineo SAITO, and Michio NIWANO. "Adsorption of Benzene on Si(100) Surface." Hyomen Kagaku 24, no. 2 (2003): 98–104. http://dx.doi.org/10.1380/jsssj.24.98.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Goodnick, S. M., D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek. "Surface roughness at the Si(100)-SiO2interface." Physical Review B 32, no. 12 (1985): 8171–86. http://dx.doi.org/10.1103/physrevb.32.8171.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Mühlhoff, L., and T. Bolze. "Surface analytical characterization of oxide-free Si(100) wafer surfaces." Fresenius' Zeitschrift für analytische Chemie 333, no. 4-5 (1989): 527–30. http://dx.doi.org/10.1007/bf00572370.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Yesin M.Yu., Deryabin A. S., Kolesnikov A. V., and Nikiforov A.I. "Study of Si(100) surface step convergence kinetics." Physics of the Solid State 65, no. 2 (2023): 167. http://dx.doi.org/10.21883/pss.2023.02.55397.476.

Full text

Abstract:

In this work, the convergence kinetics investigations of the SA- and SB-steps on Si(100) substrates with inclination 0.5o and 0.1o were carried out. Analysis of the time dependence of reflection high-energy electron diffraction (RHEED) intensity was used to establish the growth kinetics character on vicinal Si(100) surfaces. It is shown that, in a Si flow at the growth rate of 0.37 ML/s, the step convergence velocity has a decreasing exponential dependence with the temperature increase. It is determined that the single-domain surface formation velocity increases with an increase in the terrace

APA, Harvard, Vancouver, ISO, and other styles

36

Takatsuka, Toshinori, Masaki Fujiu, Masao Sakuraba, Takashi Matsuura, and Junichi Murota. "Surface reaction of CH3SiH3 on Ge(100) and Si(100)." Applied Surface Science 162-163 (August 2000): 156–60. http://dx.doi.org/10.1016/s0169-4332(00)00185-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Kusunoki, I., T. Takaoka, Y. Igari, and K. Ohtsuka. "Nitridation of a Si(100) surface by 100–1000 eV N+2 ion beams." Journal of Chemical Physics 101, no. 9 (1994): 8238–45. http://dx.doi.org/10.1063/1.468194.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

KAMARATOS, M., and C. A. PAPAGEORGOPOULOS. "SODIUM AND CHLORINE COADSORPTION ON Si(100)." Surface Review and Letters 08, no. 03n04 (2001): 261–69. http://dx.doi.org/10.1142/s0218625x01001014.

Full text

Abstract:

In this paper we study the adsorption of molecular chlorine on the Si(100)(2 × 1) surface and its interaction with sodium at room and elevated temperature in an ultrahigh vacuum. Cl is deposited dissociatively on the surface and forms SiCl 2 and SiCl 4. During Na deposition on the Cl-covered Si(100) surface, the substrate participates to a NaSiCl 2 compound formation, whereas Cl deposition on Na-covered Si(100) leads to NaCl formation, which is grown with the (100) plane parallel to the surface. After the completion of the NaCl formation, the excess Cl interacts with the substrate and forms Si

APA, Harvard, Vancouver, ISO, and other styles

39

Oyanagi, Hiroyuki, Tsunenori Sakamoto, Kunihiro Sakamoto, Tadashi Matsushita, Takafumi Yao, and Takehiko Ishiguro. "Si/ Ge/ Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS." Journal of the Physical Society of Japan 57, no. 6 (1988): 2086–92. http://dx.doi.org/10.1143/jpsj.57.2086.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Lim, Seung-Hyun, Sukchan Song, Tai-su Park, Euijoon Yoon, and Jong-Ho Lee. "Si adatom diffusion on Si (100) surface in selective epitaxial growth of Si." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 6 (2003): 2388. http://dx.doi.org/10.1116/1.1621656.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Watanabe, Kazuyuki, and Tasuku Satoh. "Electric field induced surface electronic structures of Si(100) surface." Surface Science Letters 287-288 (May 1993): A398. http://dx.doi.org/10.1016/0167-2584(93)90479-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Watanabe, Kazuyuki, and Tasuku Satoh. "Electric field induced surface electronic structures of Si(100) surface." Surface Science 287-288 (May 1993): 502–5. http://dx.doi.org/10.1016/0039-6028(93)90830-d.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Flötotto, D., Z. M. Wang, L. P. H. Jeurgens, and E. J. Mittemeijer. "Evolution of surface stress during oxygen exposure of clean Si(111), Si(100), and amorphous Si surfaces." Journal of Applied Physics 115, no. 2 (2014): 023501. http://dx.doi.org/10.1063/1.4850936.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Marri, Ivan, Michele Amato, Matteo Bertocchi, Andrea Ferretti, Daniele Varsano, and Stefano Ossicini. "Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures." Physical Chemistry Chemical Physics 22, no. 44 (2020): 25593–605. http://dx.doi.org/10.1039/d0cp04013d.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

CRUZ, M. P., J. A. DÍAZ, and J. M. SIQUEIROS. "Si(100) WAFERS CLEANED BY LASER ABLATION." International Journal of Modern Physics B 18, no. 23n24 (2004): 3169–76. http://dx.doi.org/10.1142/s0217979204026421.

Full text

Abstract:

A quick and relatively simple technique for stripping off Si wafers of its native oxide and carbon impurities, using pulsed laser ablation at room temperature, is presented. In a chamber at 10-10 Torr, an oxidized Si (100) surface is ablated with 248 nm UV radiation from a KrF excimer laser. Experiments using 200 pulses of different laser energy densities were performed until a clean surface, at 600 mJ/cm 2, was obtained as determined by Auger electron spectroscopy and ellipsometry measurements. The slightly out of focus laser beam is scanned over the selected area leaving an atomically 1×1 fe

APA, Harvard, Vancouver, ISO, and other styles

46

Zhu, Xiao Yan, and Young Hee Lee. "Defect-induced Si/Ge intermixing on the Ge/Si(100) surface." Physical Review B 59, no. 15 (1999): 9764–67. http://dx.doi.org/10.1103/physrevb.59.9764.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Stevens, A. A. E., and H. C. W. Beijerinck. "Surface roughness in XeF2 etching of a-Si∕c-Si(100)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 1 (2005): 126–36. http://dx.doi.org/10.1116/1.1830499.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Díaz Compañy, A., G. Brizuela, and S. Simonetti. "Study of Materials for Drugs Delivery: cis-[PtCl2(NH3)2] Hydrolysis on Functionalized SiO2(100) Surfaces." Journal of Solid State Physics 2013 (December 22, 2013): 1–10. http://dx.doi.org/10.1155/2013/363209.

Full text

Abstract:

The hydrolysis of the cis-platin drug on a SiO2(100) hydrated surface was investigated by computational modeling. The cisplatin molecule presents weak interactions with the neighbouring OH groups of the hydrated surface. The cisplatin hydrolysis is not favourable on the SiO2(100) surface. Consequently, the adsorption properties of SiO2(100) are improved considering the surface's modification with K, Mg, or NH2 functional species. In general, the system is more stable and the molecule-surface distance is reduced when cisplatin is adsorbed on the promoted surfaces. The hydrolysis is a favourable

APA, Harvard, Vancouver, ISO, and other styles

49

ZOTOV, A. V., S. V. RYZHKOV, V. G. LIFSHITS, and V. G. DUCHINSKY. "LEED-AES STUDY OF SURFACE STRUCTURES FORMED AT COADSORPTION OF Al AND Sb ON (100), (111), AND (110) Si SURFACES." Surface Review and Letters 01, no. 02n03 (1994): 285–93. http://dx.doi.org/10.1142/s0218625x9400028x.

Full text

Abstract:

The formation of the ordered surface structures upon successive deposition of Al and Sb onto the Si(100), Si(111), and Si(110) surfaces held at about 650°C were studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The primary emphasis was given to the investigation of the formation of (Al, Sb)/Si interface at total coverages of adsorbates in submonolayer range. In this case, according to AES data the adsorption of Al and Sb atoms proceeds collaterally in a simple additive manner. In the LEED observations, several new reconstructions, Si (100)c(4×4), Si (100)

APA, Harvard, Vancouver, ISO, and other styles

50

Douillard, L., F. Semond, P. Soukiassian та ін. "Composition and Structure of β-SiC(100)-(2 × 2) Surfaces Monitored by Photoemission Spectroscopy using Synchrotron Radiation". Surface Review and Letters 05, № 01 (1998): 213–17. http://dx.doi.org/10.1142/s0218625x98000396.

Full text

Abstract:

We investigate the single domain β-SiC(100)-(2 × 1) surface reconstruction by core level and valence band photoemission spectroscopies using synchrotron radiation. Specific spectral features at the Si 2p and C 1s core levels including bulk and surface core level shifts, and in the valence band, bring experimental evidence of reproducible β-SiC(100)-(2 × 1) structures having different Si/C compositions ranging from Si-terminated to Si- + C-containing surfaces.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!