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Journal articles on the topic 'Si(100)'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 May 2024

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1

Ospelt, M., W. Bacsa, J. Henz, K. A. Mäder, and H. von Känel. "strained-layer superlattices on Si(100), (100) and Si1−xGex/Si(100)." Superlattices and Microstructures 5, no. 1 (1989): 71–77. http://dx.doi.org/10.1016/0749-6036(89)90070-0.

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2

Stevens, A. A. E., M. C. M. van de Sanden, H. C. W. Beijerinck, and W. M. M. Kessels. "Roughening during XeF2 etching of Si(100) through interface layers: H:Si(100) and a-Si∕Si(100)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27, no. 2 (2009): 367–75. http://dx.doi.org/10.1116/1.3085718.

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3

Farzaneh, Azadeh, and R. E. Butera. "Si epitaxy on Cl-Si(100)." Applied Surface Science 589 (July 2022): 152877. http://dx.doi.org/10.1016/j.apsusc.2022.152877.

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4

Ko, Young-Jo, Kang-Ho Park, Jeong Sook Ha, and Wan Soo Yun. "Mixed Ge-Si Dimer Formation in Ge/Si(100) and Si/Ge(100) Growth." Japanese Journal of Applied Physics 39, Part 1, No. 7B (2000): 4295–97. http://dx.doi.org/10.1143/jjap.39.4295.

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5

Shen, T. H., and C. C. Matthai. "The electronic structure of Si(100) and As/Si(100) surfaces." Journal of Physics: Condensed Matter 3, no. 32 (1991): 6169–72. http://dx.doi.org/10.1088/0953-8984/3/32/022.

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6

Tung, R. T., D. J. Eaglesham, F. Schrey, and J. P. Sullivan. "Single‐crystal Si/NiSi2/Si(100) structures." Journal of Applied Physics 73, no. 12 (1993): 8250–57. http://dx.doi.org/10.1063/1.353443.

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7

Bedrossian, Peter J. "Si Binding and Nucleation on Si(100)." Physical Review Letters 74, no. 18 (1995): 3648–51. http://dx.doi.org/10.1103/physrevlett.74.3648.

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8

Schug, C. A., B. Konrad, B. Eisenhut, E. Bertel, and W. Steinmann. "Al2O3 on Si(100) and Ge(100)." Surface Science 225, no. 1-2 (1990): 58–62. http://dx.doi.org/10.1016/0039-6028(90)90423-6.

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9

Новиков, С. Н., С. П. Тимошенков, В. С. Минаев, Е. П. Горюнова, Н. Н. Герасименко та Д. И. Смирнов. "Нанопористость пластин Si (100)". Журнал физической химии 90, № 9 (2016): 1396–401. http://dx.doi.org/10.7868/s0044453716090211.

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10

da Cunha, S. P., M. Schreiner, C. I. Z. Mammana, A. P. Mammana, and R. Landers. "SnO2Si(100) interface." Vacuum 41, no. 4-6 (1990): 1053–55. http://dx.doi.org/10.1016/0042-207x(90)93859-h.

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11

Kanashima, Takeshi, Yoshiaki Kurioka, Takaaki Imai, Hideaki Yamamoto, and Masanori Okuyama. "Characterization of F2Treatment Effects on Si(100) Surface and Si(100)/SiO2Interface." Japanese Journal of Applied Physics 36, Part 1, No. 4B (1997): 2460–63. http://dx.doi.org/10.1143/jjap.36.2460.

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12

Gates, S. M., and D. D. Koleske. "Elemental marking of Si on Si(100) interfaces." Applied Physics Letters 61, no. 3 (1992): 309–11. http://dx.doi.org/10.1063/1.107921.

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13

Drucker, J. "Self-assembling Ge(Si)/Si(100) quantum dots." IEEE Journal of Quantum Electronics 38, no. 8 (2002): 975–87. http://dx.doi.org/10.1109/jqe.2002.800962.

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14

Wu, Ye-Min, and Jyi-Tsong Lo. "Dielectric Properties of PbTiO3Thin Films on CeO2/Si(100) and Y2O3/Si(100)." Japanese Journal of Applied Physics 37, Part 1, No. 10 (1998): 5645–50. http://dx.doi.org/10.1143/jjap.37.5645.

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15

Besley, Nicholas A., and Adam J. Blundy. "Electronic Excited States of Si(100) and Organic Molecules Adsorbed on Si(100)." Journal of Physical Chemistry B 110, no. 4 (2006): 1701–10. http://dx.doi.org/10.1021/jp055191c.

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16

Vantomme, André, Marc-A. Nicolet, Gang Bai, and David B. Fraser. "Growth of epitaxial CoSi2 on Si(100) using Si(100)/Ti/Co bilayers." Applied Surface Science 73 (November 1993): 117–23. http://dx.doi.org/10.1016/0169-4332(93)90154-4.

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17

Stadler, R., and R. Podloucky. "Ab initiostudies of theCoSi2(100)/Si(100)interface." Physical Review B 62, no. 3 (2000): 2209–19. http://dx.doi.org/10.1103/physrevb.62.2209.

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18

Lozovoy, Kirill, Andrey Kokhanenko, and Alexander Voitsekhovskii. "Comparative analysis of germanium–silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces." Nanotechnology 29, no. 5 (2018): 054002. http://dx.doi.org/10.1088/1361-6528/aa9fdd.

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19

Novikov, S. N., S. P. Timoshenkov, V. S. Minaev, E. P. Goryunova, N. N. Gerasimenko, and D. I. Smirnov. "Nanoporosity of Si (100) bars." Russian Journal of Physical Chemistry A 90, no. 9 (2016): 1869–74. http://dx.doi.org/10.1134/s0036024416090211.

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20

Lee, F., T. R. Gow, and R. I. Masel. "Trimethylgallium Decomposition on Si(100)." Journal of The Electrochemical Society 136, no. 9 (1989): 2640–45. http://dx.doi.org/10.1149/1.2097529.

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21

Gallego, J. M., and R. Miranda. "The Fe/Si(100) interface." Journal of Applied Physics 69, no. 3 (1991): 1377–83. http://dx.doi.org/10.1063/1.347276.

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22

Lee, Young Joo, Sehun Kim, Chi-Sun Hwang, C. Lee, and Chanyong Hwang. "Reconstruction on Si(100) surfaces." Physical Review B 50, no. 15 (1994): 11204–7. http://dx.doi.org/10.1103/physrevb.50.11204.

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23

Gryko, J., and R. E. Allen. "Dimer switching on Si(100)." Ultramicroscopy 42-44 (July 1992): 793–800. http://dx.doi.org/10.1016/0304-3991(92)90360-v.

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24

Prabhakaran, K., K. Sumitomo, and T. Ogino. "Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi2/Si(100)." Applied Physics Letters 68, no. 9 (1996): 1241–43. http://dx.doi.org/10.1063/1.115939.

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25

Yoshimura, Masamichi, Izumi Ono, and Kazuyuki Ueda. "Initial stages of Ni reaction on Si(100) and H-terminated Si(100) surfaces." Applied Surface Science 130-132 (June 1998): 276–81. http://dx.doi.org/10.1016/s0169-4332(98)00070-1.

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26

Aizawa, Koji, Tatsuya Ichiki, Tomoyuki Okamoto, Eisuke Tokumitsu, and Hiroshi Ishiwara. "Ferroelectric Properties ofBaMgF4Films Grown on Si(100), (111), andPt(111)/SiO2/Si(100)Structures." Japanese Journal of Applied Physics 35, Part 1, No. 2B (1996): 1525–30. http://dx.doi.org/10.1143/jjap.35.1525.

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27

Huang, Z. ‐H, and R. E. Allen. "Diffusion of Si atoms and dimers on Si(100)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9, no. 3 (1991): 876–79. http://dx.doi.org/10.1116/1.577333.

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28

Lu, Z. H., J. ‐M Baribeau, and D. J. Lockwood. "Surface segregation during Si/Gen/Si(100) interface formation." Journal of Applied Physics 76, no. 6 (1994): 3911–13. http://dx.doi.org/10.1063/1.357399.

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29

Hirayama, Hiroyuki, Chiaki Sasaoka, Toru Tatsumi, and Yoshio Ohshita. "Triethylgallium adsorption on Si(100) and Si(111) surfaces." Applied Physics Letters 54, no. 2 (1989): 126–28. http://dx.doi.org/10.1063/1.101205.

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30

Paulsen-Boaz, C. M., T. N. Rhodin, and C. C. Lang. "Chlorination and photodesorption on Si(100) and Si(111)." Applied Surface Science 79-80 (May 1994): 72–78. http://dx.doi.org/10.1016/0169-4332(94)90390-5.

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31

LU JIANG and WU ZI-QIN. "A CROSS-SECTIONED TEM STUDY OF Si-W/Si/SiO2/Si(100)." Acta Physica Sinica 38, no. 6 (1989): 981. http://dx.doi.org/10.7498/aps.38.981.

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32

Jung, Sung Chul, and Young-Kyu Han. "Facet-dependent lithium intercalation into Si crystals: Si(100) vs. Si(111)." Physical Chemistry Chemical Physics 13, no. 48 (2011): 21282. http://dx.doi.org/10.1039/c1cp22026h.

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33

Domashevskaya, E. P., V. A. Terekhov, S. Yu Turishchev, et al. "Synchrotron investigations of Si/Mo/Si…c-Si (100) multilayer nanoperiodic structures." Physics of the Solid State 55, no. 3 (2013): 634–41. http://dx.doi.org/10.1134/s1063783413030074.

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34

Schaefer, J. A., F. Lodders, Th Allinger, S. Nannarone, J. Anderson, and G. J. Lapeyre. "Catalytic oxidation of Si(100) and InP(100) surfaces." Surface Science 211-212 (April 1989): 1075–82. http://dx.doi.org/10.1016/0039-6028(89)90877-7.

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35

Schaefer, J. A., F. Lodders, Th Allinger, S. Nannarone, J. Anderson, and G. J. Lapeyre. "Catalytic oxidation of Si(100) and InP(100) surfaces." Surface Science Letters 211-212 (April 1989): A162—A163. http://dx.doi.org/10.1016/0167-2584(89)90425-8.

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36

Kang, Dae-Sik, Jong-Han Song, Joong-Hee Nam, Jeong-Ho Cho, and Myoung-Pyo Chun. "Phase transformation and magnetic properties of NiFe thin films on Si(100) wafer and SiO2/Si(100) substrate by co-sputtering." Journal of the Korean Crystal Growth and Crystal Technology 20, no. 5 (2010): 216–20. http://dx.doi.org/10.6111/jkcgct.2010.20.5.216.

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37

Kageshima, Hiroyuki, and Kenji Shiraishi. "First-Principles Study of Oxide Growth on Si(100) Surfaces and atSiO2/Si(100) Interfaces." Physical Review Letters 81, no. 26 (1998): 5936–39. http://dx.doi.org/10.1103/physrevlett.81.5936.

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38

Herbots, N., J. M. Shaw, Q. B. Hurst, et al. "The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1×1) Si(100)." Materials Science and Engineering: B 87, no. 3 (2001): 303–16. http://dx.doi.org/10.1016/s0921-5107(01)00729-2.

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39

Nishijima, M., J. Yoshinobu, H. Tsuda, and M. Onchi. "The adsorption and thermal decomposition of acetylene on Si(100) and vicinal Si(100)9°." Surface Science 192, no. 2-3 (1987): 383–97. http://dx.doi.org/10.1016/s0039-6028(87)81134-2.

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40

Nishijima, M., J. Yoshinobu, H. Tsuda, and M. Onchi. "The adsorption and thermal decomposition of acetylene on Si(100) and vicinal Si(100)9°." Surface Science Letters 192, no. 2-3 (1987): A568. http://dx.doi.org/10.1016/0167-2584(87)90807-3.

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41

Chang, Chin‐An. "Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures." Journal of Applied Physics 67, no. 1 (1990): 566–69. http://dx.doi.org/10.1063/1.345194.

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42

Almeida, J., L. Sirigu, G. Margaritondo, P. Da Padova, C. Quaresima, and P. Perfetti. "Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces." Journal of Physics D: Applied Physics 32, no. 3 (1999): 191–94. http://dx.doi.org/10.1088/0022-3727/32/3/002.

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43

Vancauwenberghe, O., O. C. Hellman, H. Herbots, W. J. Tan, J. L. Olson, and W. J. Croft. "Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and." Materials Science and Engineering: B 12, no. 1-2 (1992): 97–101. http://dx.doi.org/10.1016/0921-5107(92)90266-c.

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44

Kaddouri, El H., T. Maurice, X. Gratens, et al. "Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)." physica status solidi (a) 176, no. 2 (1999): 1071–76. http://dx.doi.org/10.1002/(sici)1521-396x(199912)176:2<1071::aid-pssa1071>3.0.co;2-e.

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45

Chang, Chin‐An. "Magnetization of (100)NiFe films deposited on (100)Pd/Cu/Si(100)." Applied Physics Letters 58, no. 21 (1991): 2444–46. http://dx.doi.org/10.1063/1.104868.

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46

Hartmann, J. M., M. Burdin, G. Rolland, and T. Billon. "Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces." Journal of Crystal Growth 294, no. 2 (2006): 288–95. http://dx.doi.org/10.1016/j.jcrysgro.2006.06.043.

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47

Pezoldt, Jörg, Thomas Stauden, Florentina Niebelschütz, Mohamad Adnan Alsioufy, Richard Nader, and Pierre M. Masri. "Tuning Residual Stress in 3C-SiC(100) on Si(100)." Materials Science Forum 645-648 (April 2010): 159–62. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.159.

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Abstract:
Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate near surface region into 3C-SiC(100) followed by an epitaxial growth step allows the manipulation of the residual strain. The morphology and the residual strain in dependence on the Ge coverage are only affected by the Ge quantity and not by the growth technique. The positive effect of the Ge coverage is attributed to changes in the morphology during the conversion process, as well as to a reduced lattice and thermal mismatch between SiC and Si in conseq
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48

Oyanagi, Hiroyuki, Tsunenori Sakamoto, Kunihiro Sakamoto, Tadashi Matsushita, Takafumi Yao, and Takehiko Ishiguro. "Si/ Ge/ Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS." Journal of the Physical Society of Japan 57, no. 6 (1988): 2086–92. http://dx.doi.org/10.1143/jpsj.57.2086.

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49

Lim, Seung-Hyun, Sukchan Song, Tai-su Park, Euijoon Yoon, and Jong-Ho Lee. "Si adatom diffusion on Si (100) surface in selective epitaxial growth of Si." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 6 (2003): 2388. http://dx.doi.org/10.1116/1.1621656.

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50

D'Angelo, M., H. Enriquez, M. Silly, et al. "H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization." Materials Science Forum 457-460 (June 2004): 399–402. http://dx.doi.org/10.4028/www.scientific.net/msf.457-460.399.

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