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Journal articles on the topic 'Si (111) Heterojunction'

Author: Grafiati

Published: 6 September 2023

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1

Chao, Xiong, Chen Lei, and Yuan Hongchun. "Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction." Open Materials Science Journal 7, no. 1 (2013): 29–32. http://dx.doi.org/10.2174/1874088x01307010029.

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The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show 􀀂-phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The fo

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Razooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination.

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He, Xiao-Min, Zhi-Ming Chen, Lei Huang, and Lian-Bi Li. "First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction." Modern Physics Letters B 29, no. 29 (2015): 1550182. http://dx.doi.org/10.1142/s0217984915501821.

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Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)/[Formula: see text]/6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)/[Formula: see text]/6H-SiC(0001) heterojunction are [Formula: see text]-[Formula: see text] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher a

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4

Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa та Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, № 4 (2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.

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β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/

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Xu, Bei, Changjun Zhu, Xiaomin He, et al. "First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction." Advances in Condensed Matter Physics 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8010351.

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First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction inte

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6

Xiong, Chao, An Cheng Xu, Xing Zhong Lu, Lei Chen, Xi Fang Zhu, and Ruo He Yao. "Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode." Key Engineering Materials 538 (January 2013): 324–27. http://dx.doi.org/10.4028/www.scientific.net/kem.538.324.

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The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV,

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7

Mahowald, P. H. "Heterojunction band discontinuity at the Si–Ge(111) interface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 4 (1985): 1252. http://dx.doi.org/10.1116/1.583050.

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8

González, M. L., F. Soria, and M. Alonso. "Initial stages of heterojunction formation: Si on GaAs(111)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 3 (1990): 1977–82. http://dx.doi.org/10.1116/1.576791.

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9

Tsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, et al. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications." Beilstein Journal of Nanotechnology 8 (September 15, 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattic

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10

Abdul Majeed E.Ibrahim, Raid A. Isma'el, Enad S.Ibrahim, and Essam M.Ibrahim. "Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis." Tikrit Journal of Pure Science 21, no. 7 (2023): 162–66. http://dx.doi.org/10.25130/tjps.v21i7.1123.

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In this work prepared ZnO/p-Si heterojunction by using spray pyrolysis method (CSP) from Zinc acetate solution (Zn(CH3COO)22H2O) on (111) oriented p-type silicon substrate with dimension (1cmx1cm) composed with (0.2M) at (350 Co), and studying The electrical properties of ZnO/p-Si heterojunction. (I-V) characteristic in dark and illumination, (C-V) characteristic and The built- in potential (Vbi) is calculated, while from I-V measurements, the ideality factor (β), the Rectification Factor(F) and (Iphoto/Idark) ratio are calculated.

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HOSSEINI, A., H. H. GÜLLÜ, E. COSKUN, M. PARLAK, and C. ERCELEBI. "FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS." Surface Review and Letters 26, no. 06 (2019): 1850205. http://dx.doi.org/10.1142/s0218625x18502050.

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Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO2 film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV–visual (UV–Vis) spectral and dark current-voltage (I–V) measurement analyses. The deposited film layer was found to be homogeneou

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Alkallas, Fatemah H., Shoug M. Alghamdi, Ameenah N. Al-Ahmadi, et al. "Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application." Micromachines 14, no. 8 (2023): 1546. http://dx.doi.org/10.3390/mi14081546.

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The high-quality n-type CdS on a p-type Si (111) photodetector device was prepared for the first time by a one-pot method based on an ns laser ablation method in a liquid medium. Cadmium target was ablated in DMSO solution, containing sulfur precursor, and stirred, assisting in 1D-growth, to create the sulfide structure as CdS nano-ropes form, followed by depositing on the Si-substrate by spin coating. The morphological, structural, and optical characteristics of the CdS structure were examined using X-ray diffraction, transmission, and scanning electron microscopy, photoluminescence, and UV-V

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13

Zhang, Yongfang, Tao Ji, Wenlong Zhang, et al. "A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency." Journal of Materials Chemistry C 5, no. 47 (2017): 12520–28. http://dx.doi.org/10.1039/c7tc04565d.

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ABIDRI, B., J. P. LACHARME, M. GHAMNIA, C. A. SÉBENNE, M. EDDRIEF, and M. ZERROUKI. "EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION." Surface Review and Letters 06, no. 06 (1999): 1173–78. http://dx.doi.org/10.1142/s0218625x9900130x.

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Single crystal substrates of GaSe, a layered semiconductor with a 2 eV band gap, were epitaxially grown by MBE onto a Si(111)(1×1)–H substrate, forming a perfectly abrupt heterojunction. Controlled amounts of Cu were sequentially deposited onto the clean passive surface of GaSe from a few tenths to several hundred monolayers (1 ML refers to the GaSe surface: 8 × 1014 at/cm 2). After given Cu depositions, the effect of UHV annealings at increasing temperatures was studied, until GaSe removal. The system was characterized as a function of either Cu deposit or annealing temperature using low ener

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15

Zainuriah, Hassan, Sha Shiong Ng, G. L. Chew, et al. "Growth and Properties of GaN/Si Heterojunction." Materials Science Forum 480-481 (March 2005): 531–36. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.531.

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Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer

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16

Hussein, B. H., H. K. Hassun, B. K. H. Maiyaly, and S. H. Aleabi. "Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction." Journal of Ovonic Research 18, no. 1 (2022): 37–34. http://dx.doi.org/10.15251/jor.2022.181.37.

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Transition metal Copper doped Cadmium oxide and (Cu: CdO and n-CdO: Cu / p-Si) thin films were prepared onto glass and p-type single crystal (111) Si substrates at temperature 300 K by thermal evaporation technique with thickness (400±30) nm. The effects of different Cu ratios on the CdO thin films and heterojunction of n-CdO / p-Si.. The X-ray diffraction analysis approves the CdO films are polycrystalline and cubic structure with lattice parameter of 0.4689 nm. The optical transmittance exhibits excellent optical absorption for 6% Cu doping. Decreased of optical band gap from 2.1 to 1.8 eV.

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17

Stegemann, Bert, Jan Kegel, Lars Korte, and Heike Angermann. "Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells." Solid State Phenomena 255 (September 2016): 338–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.338.

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Key steps in the fabrication of high-efficiency a-Si:H/c-Si heterojunction solar cells are the controlled pyramid texturing of the c-Si substrates to minimize reflection losses and the subsequent passivation by deposition of a high-quality a-Si:H layer to reduce recombination losses. This contribution reviews our recent results on the optimization of the wet-chemical texturing of crystalline Si wafers for the preparation of heterojunction solar cells with respect to low reflection losses, low recombination losses and long minority carrier lifetimes. It is demonstrated, that by joint optimizati

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18

Deng, Tianguo, Takuma Sato, Zhihao Xu, et al. "p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)." Applied Physics Express 11, no. 6 (2018): 062301. http://dx.doi.org/10.7567/apex.11.062301.

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SALIM, EVAN T., MARWA S. AL WAZNY, and MAKRAM A. FAKHRY. "GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE." Modern Physics Letters B 27, no. 16 (2013): 1350122. http://dx.doi.org/10.1142/s0217984913501224.

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Thin films of micro bismuth oxide particles were successfully prepared by in situ oxidation of the laser ablated bismuth metal. (111) oriented p-type crystalline silicon substrates were used. The effects of substrate tiled angle on the characteristics of the prepared film were studied. Also, the performance of n- Bi 2 O 3/p- Si heterojunction device was investigated. The obtained current–voltage characteristics in dark and under illumination insure the dependence of the fabricated device characteristic on the deposition angle. The I–V characteristics show that all prepared devices are of abrup

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Dang, Zhaoying, Wenhui Wang, Jiayi Chen, et al. "Vis-NIR photodetector with microsecond response enabled by 2D bismuth/Si(111) heterojunction." 2D Materials 8, no. 3 (2021): 035002. http://dx.doi.org/10.1088/2053-1583/abea65.

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Roul, Basanta, Deependra Kumar Singh, Rohit Pant, Arun Malla Chowdhury, K. K. Nanda, and S. B. Krupanidhi. "Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height." Journal of Applied Physics 129, no. 24 (2021): 244502. http://dx.doi.org/10.1063/5.0056053.

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Hunger, R., Chr Pettenkofer, and R. Scheer. "Dipole formation and band alignment at the Si(111)/CuInS[sub 2] heterojunction." Journal of Applied Physics 91, no. 10 (2002): 6560. http://dx.doi.org/10.1063/1.1458051.

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23

Pan, M., S. P. Wilks, P. R. Dunstan, et al. "Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets." Thin Solid Films 343-344 (April 1999): 605–8. http://dx.doi.org/10.1016/s0040-6090(98)01708-8.

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Sittimart, Phongsaphak, Adison Nopparuchikun та Nathaporn Promros. "Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering". Advances in Materials Science and Engineering 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/6590606.

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In this study, n-type β-FeSi2/p-type Si heterojunctions, inside which n-type β-FeSi2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560°C and Ar pressure of 2.66×10-1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung’s and Norde’s methods. Computation using the TE theory showed that the values of

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Heo, Joo-Hoe, Hyuk-Hyun Ryu, and Jong-Hoon Lee. "Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness." Korean Journal of Materials Research 21, no. 1 (2011): 34–38. http://dx.doi.org/10.3740/mrsk.2011.21.1.034.

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Sánchez-Garcı́a, M. A., F. B. Naranjo, J. L. Pau, A. Jiménez, E. Calleja, and E. Muñoz. "Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)." Journal of Applied Physics 87, no. 3 (2000): 1569–71. http://dx.doi.org/10.1063/1.372052.

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Ji, Tao, Qian Liu, Rujia Zou, et al. "An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO2 Nanorod Array Heterojunction." Advanced Functional Materials 26, no. 9 (2016): 1400–1410. http://dx.doi.org/10.1002/adfm.201504464.

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binti Mohamad, Fariza, Junji Sasano, Tsutomu Shinagawa, Seiji Watase, and Masanobu Izaki. "Electrochemical Construction of (0001)-ZnO/(111)-Cu₂O Heterojunction Diode with Excellent Rectification Feature." Advanced Materials Research 287-290 (July 2011): 1412–15. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1412.

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The (111)-p-Cu2O/(0001)-n-ZnO heterostructure was successfully fabricated using low-temperature electrodeposition method on Au(111)/Si(100) substrate. The ZnO film deposited at positive current density was composed of aggregates of isolated hexagonal columnar grains, and the interface between ZnO and Cu2O layer was clearly observed. (0002)-oriented continuous ZnO layer deposited on the (111)-Cu2O layer at negative current density, but the metallic Cu layer was formed between ZnO and Cu2O layers by reducing Cu2O to Cu during ZnO deposition. The Cu2O/isolated-ZnO heterostructure showed ohmic fea

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Pattada, B., Jiayu Chen, M. O. Manasreh, et al. "Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates." Journal of Applied Physics 93, no. 9 (2003): 5824–26. http://dx.doi.org/10.1063/1.1561583.

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Kumar, Arun, Samrat Mukherjee, Himanshu Sharma, et al. "Role of deposition parameters on the properties of the fabricated heterojunction ZnS/p-Si Schottky diode." Physica Scripta 97, no. 4 (2022): 045819. http://dx.doi.org/10.1088/1402-4896/ac6078.

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Abstract Heterojunction diodes of ZnS/p-Si have been fabricated using the chemical bath deposition (CBD) technique at two different deposition durations under both stirring and non-stirring conditions. The x-ray diffraction (XRD) patterns indicate the deposited ZnS films exhibit good crystallinity with the growth direction along the (111) planes of a cubic zinc blend structure. The crystallite size of all the deposited ZnS thin films have been calculated using the Scherer formula and found to be in the range of 2.2–2.7 nm which is very close (∼4 nm) to the size estimated using transmission ele

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Li, Yapeng, Yingfeng Li, Jianyuan Wang, et al. "The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction." Journal of Electron Spectroscopy and Related Phenomena 217 (May 2017): 1–5. http://dx.doi.org/10.1016/j.elspec.2017.03.007.

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McKernan, S., and C. B. Carter. "Observation of double ribbons in GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 928–29. http://dx.doi.org/10.1017/s0424820100106703.

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The characterization of GaAs on Si is usually performed using cross-section TEM specimens which have been prepared so that the heterojunction is perpendicular to the plane of the foil. In this configuration, however, dislocations present in the GaAs (which lie in the {111} glide planes) are all inclined to the foil. Only a short segment of the dislocation will thus be visible in the thin foil, and even this short segment will be affected over most of its length by the presence of the surface so that it may not be representative of dislocations in the ‘bulk’ epilayer. By preparing TEM cross-sec

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Du, Chen-Hsun, Chien-Hsun Chen, Teng-Yu Wang та ін. "Fabricating 43-μm-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates". ECS Journal of Solid State Science and Technology 4, № 8 (2015): P319—P323. http://dx.doi.org/10.1149/2.0171508jss.

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Switzer, Jay, Avishek Banik, and Bin Luo. "(Invited) Epitaxial Electrodeposition of Wide Bandgap Semiconductors for Transparent and Flexible Electronics." ECS Meeting Abstracts MA2022-01, no. 23 (2022): 1128. http://dx.doi.org/10.1149/ma2022-01231128mtgabs.

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Single-crystal silicon is the bedrock of semiconductor devices due to the high crystalline perfection that minimizes electron-hole recombination, and the dense SiOx native oxide that minimizes surface states. One issue with the material is that it is both brittle and opaque. There is interest in moving beyond the planar structure of conventional Si-based chips to produce flexible and transparent electronic devices such as wearable solar cells, sensors, and flexible displays. In this talk we will discuss the electrodeposition of transparent, wide bandgap semiconductors such as ZnO, CuI, and CuS

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Li, Yapeng, Yingfeng Li, Yonghong Zhang, Juncai Hou, Wenyi Liu, and Jianyuan Wang. "A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition." Journal of Materials Science: Materials in Electronics 28, no. 17 (2017): 13053–57. http://dx.doi.org/10.1007/s10854-017-7137-6.

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Guan, He, Guiyu Shen, Shibin Liu, Chengyu Jiang, and Jingbo Wu. "A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application." Micromachines 14, no. 1 (2023): 168. http://dx.doi.org/10.3390/mi14010168.

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The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (Vknee), saturation current density (Id-sat), and cut-off frequency (ft) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM is proposed by considering the various performance parameters of the device to reduce the Vknee and improve the Id-sat on the premise of ensuring the ft. Based on this factor, the optimized AlGaN/GaN epitaxial structure w

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Das, U. K., M. Z. Burrows, M. Lu, S. Bowden, and R. W. Birkmire. "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films." Applied Physics Letters 92, no. 6 (2008): 063504. http://dx.doi.org/10.1063/1.2857465.

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Ku, Ching-Shun, Jheng-Ming Huang, Ching-Yuan Cheng, Chih-Ming Lin, and Hsin-Yi Lee. "Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition." Applied Physics Letters 97, no. 18 (2010): 181915. http://dx.doi.org/10.1063/1.3511284.

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Hill, D. M., F. Xu, Zhangda Lin, and J. H. Weaver. "Summary Abstract: X‐ray photoelectron spectroscopy measurements of kinetic parameters at elevated temperature for Ge/Si(111)‐7×7 heterojunction formation." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (1988): 1350–51. http://dx.doi.org/10.1116/1.575700.

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40

Selman, Abbas M., Z. Hassan, M. Husham, and Naser M. Ahmed. "A high-sensitivity, fast-response, rapid-recovery p–n heterojunction photodiode based on rutile TiO2 nanorod array on p-Si(111)." Applied Surface Science 305 (June 2014): 445–52. http://dx.doi.org/10.1016/j.apsusc.2014.03.109.

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Thanh Tung, Nguyen, Phuc Huu Dang, and Tran Le. "Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film." Science & Technology Development Journal - Engineering and Technology 2, no. 4 (2020): 240–45. http://dx.doi.org/10.32508/stdjet.v2i4.604.

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N-doped SnO2 films with varying thickness (320, 420, 520, 620, and 720 nm) were deposited at 300oC in mixed – gas sputtering Ar/N (1:1) using DC magnetron sputtering. Influence of thickness on structure, optical constants (refractive index or extinction coefficient), and electrical properties were investigated by methods such as X-ray diffraction, Uv-Vis spectra, and Hall measurement. The results show that crystalline quality and optical constants improve with increasing thickness. Specifically, NTO – 620 film has the best crystal structure and maximum values such as crystal size, refractive

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Ravikiran, L., N. Dharmarasu, K. Radhakrishnan, et al. "Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy." Journal of Applied Physics 117, no. 2 (2015): 025301. http://dx.doi.org/10.1063/1.4905620.

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Şakar, Betül Ceviz, Zeynep Orhan, Fatma Yıldırım, and Ş. Aydoğan. "Ultraviolet and visible photo-response of transparent conductive Al-doped ZnO (AZO)/n-Silicon isotype heterojunction device." Journal of Physics D: Applied Physics 55, no. 42 (2022): 425107. http://dx.doi.org/10.1088/1361-6463/ac8081.

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Abstract In this work, the electrical and photoresponse measurements of a transparent conductive Al-doped ZnO (AZO)/n-Si heterojunction device were conducted in visible light and UV wavelengths. AZO film was deposited by sputtering onto an n-Si wafer and investigated by means of morphological, chemical and electrical characterizations. The AZO/n-Si rectifying device exhibits an excellent reproducibility without noticeable variations after 90 days of measurements. At self-powered mode, the maximum on/off ratios were determined as 3081 for visible light and 4778 for UV light illumination of 365

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Mahowald, P. H., R. S. List, J. Woicik, P. Pianetta, and W. E. Spicer. "Si/InP(110) heterojunction." Physical Review B 34, no. 10 (1986): 7069–75. http://dx.doi.org/10.1103/physrevb.34.7069.

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List, R. S., P. H. Mahowald, J. Woicik, and W. E. Spicer. "The Si/GaAs(110) heterojunction." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 3 (1986): 1391–95. http://dx.doi.org/10.1116/1.573577.

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Li, Lian Bi, and Zhi Ming Chen. "Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)." Materials Science Forum 858 (May 2016): 221–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.221.

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The Si/SiC heterojunctions were prepared on 6H-SiC(0001) by low-pressure chemical vapour deposition at 900°C. X-ray diffraction was employed to investigate the in-plane orientation of Si/SiC heterojunctions. A FCC-on-HCP parallel epitaxy was achieved for the Si(111)/SiC(0001) heterostructure with a growth temperature of 900°C and the in-plane orientation relationship was [01-1]Si//[11-20]6H-SiC. Based on the in-plane orientation characterizations, the lattice-structure model of the Si/6H-SiC heterostructure was constructed. It is shown that when the in-plane orientation was (111)[01-1]Si//(000

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Abidri, B., J. P. Lacharme, M. Ghamnia, C. A. Sébenne, and M. Zerrouki. "Effect of Cu on InSe/Si(111) heterojunctions." European Physical Journal Applied Physics 8, no. 2 (1999): 153–58. http://dx.doi.org/10.1051/epjap:1999241.

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Pan, Xujie, Jing He, Lei Gao, and Handong Li. "Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions." Nanomaterials 9, no. 12 (2019): 1771. http://dx.doi.org/10.3390/nano9121771.

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This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi2Se3 and Sb2Te3). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi2Se3 or Sb2Te3. When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi2Se3/Si and Sb2Te3/Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response

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Шарофидинов, Ш. Ш., С. А. Кукушкин, М. В. Старицын та ін. "Структура и свойства композитов на основе нитридов алюминия и галлия, выращенных на кремнии разной ориентации с буферным слоем карбида кремния". Физика твердого тела 64, № 5 (2022): 522. http://dx.doi.org/10.21883/ftt.2022.05.52331.250.

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The microstructure and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic AlxGa1-xN layers of different composition located perpendicular to the direction of growth, was discovered during the growth of layers. Measurements of the pyroelectric coefficients of these heterostructures have shown that regardless of the orientation of the initial Si substrate and their pyroelectric coeffici

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ISMAIL, RAID A., KHALID Z. YAHYA, and OMAR A. ABDULRAZAQ. "PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION." Surface Review and Letters 12, no. 02 (2005): 299–303. http://dx.doi.org/10.1142/s0218625x05007074.

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Highly (101)-oriented p-Ag 2 O thin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-type Si without any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46 eV. The electrical and photovoltaic properties of Ag 2 O/Si isotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.

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