Log in

Relevant bibliographies by topics / Si-Ge / Dissertations / Theses

To see the other types of publications on this topic, follow the link: Si-Ge.

Dissertations / Theses on the topic 'Si-Ge'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 dissertations / theses for your research on the topic 'Si-Ge.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Luan, Hsin-Chiao 1969. "Ge photodetectors for Si microphotonics." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8782.

Full text

Abstract:

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.<br>Includes bibliographical references (p. 143-157).<br>This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Addition

APA, Harvard, Vancouver, ISO, and other styles

2

Aubel, Dominique. "Apport des techniques de photoémission à la connaissance des hétérostructures Ge/Si(001), Si/Ge(001), Si1-xGex/Si(001) et Si1-xGex/Ge(001)." Mulhouse, 1995. http://www.theses.fr/1995MULH0412.

Full text

Abstract:

Les premières phases de la croissance à température ambiante (TA) et 400°C des deux hétérostructures Si/Ge(001) et Ge/Si(001) ont été étudiées par des techniques de surface comme la spectroscopie de photoélectrons X(XPS) et UV(UPS) et la diffraction d'électrons lents (LEED). Un effort particulier a été fait pour développer la dernière née des méthodes d'investigations structurales dérivée de l'XPS à savoir la diffraction de photoélectrons X(XPD). L'analyse fine de l'émergence des signatures XFD et la mesure des contrastes sur les pics de diffusion vers l'avant en fonction du recouvrement, appo

APA, Harvard, Vancouver, ISO, and other styles

3

Yang, Chih Meng Atwater Harry Albert. "Manipulation of Si and Ge crystallization /." Diss., Pasadena, Calif. : California Institute of Technology, 1997. http://resolver.caltech.edu/CaltechETD:etd-01162008-112621.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Gadea, Gerard. "Integration of Si/Si-Ge nanostructures in micro-thermoelectric generators." Doctoral thesis, Universitat de Barcelona, 2017. http://hdl.handle.net/10803/459243.

Full text

Abstract:

Silicon and silicon-germanium nanostructures were grown, integrated, optimized and characterized for their application in thermoelectric generation. Specifically two kinds of nanostructures were worked: silicon and silicon-germanium nanowire arrays (Si/Si-Ge NW) and polycrystalline silicon nanotube fabrics (pSi NT). The results are dived in four chapters. Chapters 3, 4 and 5 deal with Si/Si-Ge NWs, while chapter 6 presents the pSi NT fabrics. In Chapter 3 the growth and integration of Si/Si-Ge NWs was studied, in order to optimize their properties for thermoelectric application in micro-th

APA, Harvard, Vancouver, ISO, and other styles

5

Дубина, В. М. "Термодинамічні властивості розплавів потрійних систем Ge(Si)-Mn-AI, Ge(Si)-Ga-Y та Al-Ga-Y". Дис. канд. хім. наук, КНУТШ, 2004.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

6

Teichmann, Marc. "Musterbildung auf Si- und Ge-Oberflächen durch niederenergetische Ionenstrahlerosion: Musterbildung auf Si- und Ge-Oberflächen durch niederenergetische Ionenstrahlerosion." Doctoral thesis, Leibniz-Institut für Oberflächenmodifizierung e. V, 2014. https://ul.qucosa.de/id/qucosa%3A13404.

Full text

Abstract:

Die vorliegende Arbeit beschäftigt sich mit der Oberflächenglättung und selbstorganisierten Musterbildung auf Si(100) und Ge(100) durch Beschuss mit niederenergetischen Edelgasionen (Ne, Ar, Kr, Xe). Die Untersuchungen wurden für Ionenenergien zwischen 400 eV und 2000 eV für Ioneneinfallswinkel von 0° bis 85° durchgeführt. Zudem wurde die zeitliche Entwicklung spezifischer Erosionsformen durch die Variation der Fluenz über zwei Größenordnungen analysiert. In den Experimenten finden sich deutliche Anzeichen einer Facettierung sowie einer Vergröberung der Strukturen mit zunehmender Erosionszeit.

APA, Harvard, Vancouver, ISO, and other styles

7

White, Julian Darryn. "Phonons in (Si)_m/(Ge)_n superlattices." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239759.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Camacho-Aguilera, Rodolfo Ernesto. "Ge-on-Si laser for silicon photonics." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/82173.

Full text

Abstract:

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2013.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (p. 253-263).<br>Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge growth fo

APA, Harvard, Vancouver, ISO, and other styles

9

Okyay, Ali Kemal. "Si-Ge photodetection technologies for integrated optoelectronics /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

BOIOLI, FRANCESCA. "Dislocation modelling in realistic Si-Ge nanostructures." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40115.

Full text

Abstract:

SiGe heterostructures have gained a lot of interests in view of developing devices integrated into the main-stream Silicon technology and also from a scientific point of view as a prototypical system to understand the properties of more complex systems, such as III-V semiconductors. Si-Ge epitaxial structures, as well as other mismatched heteroepitaxial materials, have a high potential to improve the state-of-the-art of Si devices, thanks to the fact that the strain modifies the band structures of this material class, opening new possibility of band-gap engineering. Since the nineties, the d

APA, Harvard, Vancouver, ISO, and other styles

11

Van, Sothachett. "Elaboration des interfaces Ge/Si(111) et Ge/Si(100) par UHV-CTLCVD : caractérisation par ARUPS, XPD et LEED." Mulhouse, 1994. http://www.theses.fr/1994MULH0322.

Full text

Abstract:

Le travail que nous présentons dans ce mémoire est centré sur l'élaboration des interfaces Ge/Si(111) et Ge/Si(100) par le dépôt chimique en phase vapeur à très basse pression (UHV-CTLCVD pour Ultra High Vacuum Chemical Vapor Deposition) utilisant le germane comme source gazeuse. Nous avons en premier lieu étudié les réactivités du germane (catalytiquement décomposé ou non) vis-à-vis des surfaces Si(111)7x7 et Si(100)2x1. Nous avons alors montré que la décomposition catalytique du germane est très intéressante, surtout pour la croissance de Ge à basses températures (<400°C). En particulier, dè

APA, Harvard, Vancouver, ISO, and other styles

12

Guangnan, Zhou. "Impact of doping on epitaxial Ge thin film quality and Si-Ge interdiffusion." Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62996.

Full text

Abstract:

Germanium-on-silicon (Ge-on-Si) structure-based semiconductor devices are playing an increasingly important role in large-scale dense photonic integration, especially in silicon (Si) photonics. Si photonics has emerged as an effective solution to overcome the wiring limit imposed on integrated circuits with continued scaling by using optical interconnects instead metal interconnects. A Si-compatible laser is the last missing piece in optical interconnects on Si platforms. Recently, III-V lasers on Ge/Si substrates and Ge-on-Si lasers were demonstrated as the most promising candidates, in which

APA, Harvard, Vancouver, ISO, and other styles

13

Fink, Andreas. "Organische Moleküle auf Halbleitern: Adsorption und elektronische Struktur ungesättigter Kohlenwasserstoffe auf Si(100)-, Ge/Si(100)- und Ge(100)-Oberflächen." [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=96278673X.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Piels, Molly. "Si/Ge photodiodes for coherent and analog communication." Thesis, University of California, Santa Barbara, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3612014.

Full text

Abstract:

<p> High-speed photodiodes have diverse applications in wireless and fiber communications. They can be used as output stages for antenna systems as well as receivers for fiber optic networks. Silicon is an attractive substrate material for photonic components for a number of reasons. Low cost manufacturing in CMOS fabrication facilities, low material loss at telecommunications wavelengths, and relatively simple co-packaging with electronics are all driving interest in silicon photonic devices. Since silicon does not absorb light at telecommunications wavelengths, photodetector fabrication requ

APA, Harvard, Vancouver, ISO, and other styles

15

Živanović, Goran. "Design considerations for Ge-on-Si waveguide photodetector." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91083.

Full text

Abstract:

Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.<br>45<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 108-114).<br>In integrated photonic circuits photodetector is one of key components, modern applications require that photodetector has a high 3 dB bandwidth. The ultimate limit for the response time for conventional photodetectors (like vertically illuminated photodiode, Schotky photodiode, MSM photodetector etc.) is given by the transit time of the photogenerated electron-hole pairs,

APA, Harvard, Vancouver, ISO, and other styles

16

Silva, Marcos Antonio Araujo. "Espalhamento Raman em heteroestruturas semicondutoras de Si/Ge." [s.n.], 1995. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277744.

Full text

Abstract:

Orientador: Fernando Cerdeira<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin<br>Made available in DSpace on 2018-07-20T17:20:50Z (GMT). No. of bitstreams: 1 Silva_MarcosAntonioAraujo_D.pdf: 2541195 bytes, checksum: 3f6719299d5a08183c7b43e174b72215 (MD5) Previous issue date: 1995<br>Resumo: Nós utilizamos espectroscopia Raman para estudar a dinâmica de rede de heteroestruturas semicondutoras de Si/Ge, tanto experimental quanto teoricamente. Foi feito um estudo de uma ampla região espectral, (de ~ 2 cm-1 até 600 cm-1), que inclui fônons acústicos dob

APA, Harvard, Vancouver, ISO, and other styles

17

Малецький, М. А. "Фотоелектричні властивості тонких напівпровідникових плівок Ge та Si". Master's thesis, Сумський державний університет, 2020. https://essuir.sumdu.edu.ua/handle/123456789/82012.

Full text

Abstract:

Мета кваліфікаційної роботи магістра полягала у аналізі результатів та вивченні явища фотоефекту у тонких напівпровідникових плівках германію та кремнію, визначення чутливості плівкових зразків до дії зовнішнього опромінення у залежності від їх товщини. Під час виконання роботи використовувалися такі методи як термічне випаровування у вакуумі для одержання зразків, оптична інтерферометрія для визначення товщини та резистометрія для дослідження впливу опромінювання на величини опору плівок. В якості приладів використовувались установка ВУП-5М, і

APA, Harvard, Vancouver, ISO, and other styles

18

Gan, Wei. "Precipitation and strengthening in AL-GE-SI alloys." The Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=osu1135275701.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Pulido, Junquera Maria Angeles. "Estudio computacional de las Si, Ge, F-zeolitas." Doctoral thesis, Universitat Politècnica de València, 2008. http://hdl.handle.net/10251/1867.

Full text

Abstract:

En el presente trabajo se estudia el papel de las moléculas orgánicas, de los átomos de Ge y de los aniones fluoruro, F-, en la síntesis de materiales zeolíticos mediante el uso de técnicas computacionales basadas en mecánica molecular y métodos químico cuánticos. El estudio de los distintos términos energéticos que componen la energía total del sistema permite analizar el papel de los cationes pentametonio, hexametonio, heptametonio y octametonio en la síntesis de las estructuras EUO, ITH, IWR e IWW puramente silíceas. La substitución isomórfica de Si por Ge es estudiada en las estructuras

APA, Harvard, Vancouver, ISO, and other styles

20

El, Kadib Abdelkrim. "Métallation (Si, Ge) des esters méthyliques d'acides gras." Toulouse 3, 2004. http://www.theses.fr/2004TOU30185.

Full text

Abstract:

Ce travail décrit la métallation (Si, Ge) des esters méthyliques d'acides gras (EMAG) et de l'huile brute. Dans un premier temps, l'hydrométallation des EMAG a été développée. La séquence d'initiation radicalaire conduit à des produits métallés avec une meilleure sélectivité. La silylation des EMAG en α de la fonction ester a été réalisée par des silyltriflates ou à partir d'énolates d'EMAG. L'optimisation des conditions opératoires a conduit à l'obtention exclusive des produits C-silylés. Le quatrième chapitre a porté sur l'obtention de biosilicones par polycondensation des silylEMAG. La modé

APA, Harvard, Vancouver, ISO, and other styles

21

Robinson, Dirk J. "High speed data converter circuits in SI-GE." Pullman, Wash. : Washington State University, 2008. http://www.dissertations.wsu.edu/Dissertations/Fall2008/d_robinson_121008.pdf.

Full text

Abstract:

Thesis (Ph. D.)--Washington State University, December 2008.<br>Title from PDF title page (viewed on Jan. 15, 2009). "School of Electrical Engineering and Computer Science." Includes bibliographical references (p. 60-61).

APA, Harvard, Vancouver, ISO, and other styles

22

Sivadasan, Vineet. "Strain relaxation study of Si1-xGex & Ge buffer layers on Si(001) and InSb on Ge/Si(001) virtual substrates." Thesis, University of Warwick, 2016. http://wrap.warwick.ac.uk/89938/.

Full text

Abstract:

Due to their direct and tuneable bandgap, III-V semiconductors offer variations in electrical properties, compared to silicon. However wafers of III-V materials are more expensive to manufacture and have higher defect densities than Si(001). Epitaxially depositing high quality thin films of III-V materials onto Si(001) substrates offers a more cost effective route to manufacturing state of the art III-V electronic devices, whilst mitigating defect generation through lattice and thermal expansion coefficient mismatches. In this study, pure Ge and Si1−xGex layers are deposited as thin film heter

APA, Harvard, Vancouver, ISO, and other styles

23

Goh, Johnathan Jian Ming. "Commercialization potential of compositionally graded Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/38550.

Full text

Abstract:

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>In title on t.p., double-underscored "x" appears as subscript.<br>Includes bibliographical references.<br>This project considers the potential of Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge and GaAs has proven successful and dual junction solar cells have been fabricated on such substrates. The potential for graded substrates in the solar market is d

APA, Harvard, Vancouver, ISO, and other styles

24

Nguyen-Duc, Trung-Kien. "Croissance épitaxiale et propriétés optiques des îlots auto-assemblés Ge/Si et des super-réseaux de courte période Ge(m)Si(n)." Aix-Marseille 2, 2005. http://theses.univ-amu.fr.lama.univ-amu.fr/2005AIX22086.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Wigblad, Dan. "Structural and optical characterization of Si/Ge quantum dots." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11672.

Full text

Abstract:

<p>In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.</p><p>The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.</p><p>As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coe

APA, Harvard, Vancouver, ISO, and other styles

26

Wietler, Tobias [Verfasser]. "Surfactant-modifizierte Epitaxie für Ge/Si-Heterobauelemente / Tobias Wietler." Hannover : Technische Informationsbibliothek und Universitätsbibliothek Hannover, 2010. http://d-nb.info/1010987275/34.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Teichmann, Marc. "Musterbildung auf Si- und Ge-Oberflächen durch niederenergetische Ionenstrahlerosion." Doctoral thesis, Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-175110.

Full text

Abstract:

Die vorliegende Arbeit beschäftigt sich mit der Oberflächenglättung und selbstorganisierten Musterbildung auf Si(100) und Ge(100) durch Beschuss mit niederenergetischen Edelgasionen (Ne, Ar, Kr, Xe). Die Untersuchungen wurden für Ionenenergien zwischen 400 eV und 2000 eV für Ioneneinfallswinkel von 0° bis 85° durchgeführt. Zudem wurde die zeitliche Entwicklung spezifischer Erosionsformen durch die Variation der Fluenz über zwei Größenordnungen analysiert. In den Experimenten finden sich deutliche Anzeichen einer Facettierung sowie einer Vergröberung der Strukturen mit zunehmender Erosionszeit

APA, Harvard, Vancouver, ISO, and other styles

28

Kim, Meekyung Ph D. Massachusetts Institute of Technology. "Limited-area growth of Ge and SiGe on Si." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/62743.

Full text

Abstract:

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 147-159).<br>The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low pressure chemical vapor deposition was investigated for two limiting cases of strain states: thin, strained, high Ge content SiGe films for transistor applications, and thick, re

APA, Harvard, Vancouver, ISO, and other styles

29

Chávez, Juan Yury Zevallos. "Função resposta de detectores semicondutores, Ge e Si(Li)." Universidade de São Paulo, 2003. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-18072012-091217/.

Full text

Abstract:

A Função Resposta (FR) foi obtida para os detectores semicondutores Ge e Si(Li) usando o método semiempírico. A FR foi calculada para cinco detectores, 4 de HpGe, de volumes ativos 89 cm3, 50 cm3, 8 cm3 e 5 cm3, e um detector de Si(Li) de 0,143 cm3 de volume ativo. O intervalo de energia estudado dói de 6 keV até 1,5 MeV. Dois tipos de estudos foram realizados neste trabalho. O primeiro estudo foi a dependência da FR com a geometria de detecção. Este estudo envolveu o cálculo da FR para uma geometria denominada simples e a extrapolação da FR calculada. A extração da FR foi realizada para anal

APA, Harvard, Vancouver, ISO, and other styles

30

Israel, Mahmoud. "Croissance et caracterisation de nanofils de Si et Ge." Thesis, Rennes 1, 2015. http://www.theses.fr/2015REN1S062/document.

Full text

Abstract:

Nous nous sommes intéressés à la croissance et la caractérisation de nanofils de silicium (Si) et de germanium (Ge). Les nanofils ont été synthétisés par le mécanisme VLS (Vapeur Liquide Solide) dans un réacteur LPCVD (Low Pressure Chemical Vapor Deposition), en utilisant l'or (Au) comme catalyseur et le silane (SiH4) ou le germane (GeH4) comme gaz précurseur. Pour que ce procédé de croissance conduise à l'obtention de nanofils, le catalyseur Au doit être nano-structuré sous la forme de nanoparticules de diamètre si possible contrôlé. Ceci est fait dans cette étude par « démouillage » d'une co

APA, Harvard, Vancouver, ISO, and other styles

31

Pfeiffer, Jens-Uwe. "Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2001. http://dx.doi.org/10.18452/14790.

Full text

Abstract:

Die Herstellung von verspannten Schichten mittels Heteroepitaxie gewinnt in der aktuellen Festkörperphysik zunehmend an Bedeutung, insbesondere wenn es gelingt, Schichten mit unterschiedlichen Gitterparametern in hoher kristalliner Perfektion, wie sie für die Herstellung elektronischer Bauelemente notwendig ist, aufeinander abzuscheiden. Der Einsatz verspannter Schichtsysteme erlaubt es, bestimmte Materialeigenschaften, wie die Ladungsträgerbeweglichkeiten und den Bandabstand, gezielt zu beeinflussen. Im Rahmen der vorliegenden Arbeit wurde die frühe Phase der Relaxation von dünnen verspannte

APA, Harvard, Vancouver, ISO, and other styles

32

Nayfeh, Hasan M. (Hasan Munir) 1974. "Investigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/7998.

Full text

Abstract:

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.<br>Includes bibliographical references (p. 125-138).<br>This thesis presents work aimed at investigating the possible benefit of strained-Si/SiGe heterostructure MOSFETs designed for nanoscale (sub-50-nm) gate lengths with the aid of device fabrication and electrical measurements combined with computer simulation. MOSFET devices fabricated on bulk-Si material are scaled in order to achieve gains in performance and integration. However, as device dimensions continue to scale, phys

APA, Harvard, Vancouver, ISO, and other styles

33

Ahn, Kyunghan. "Structural and magnetothermal properties of compounds Yb₅Si[subscript x]Ge₄₋[subscript x], Sm₅Si[subscript x]Ge₄₋[subscript x], EuO, and Eu₃O₄ /." [Ames, Iowa : Iowa State University], 2007.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

34

Zou, Min. "Structural, magnetothermal, and magnetotransport properties of single crystal Tb₅Si₂.₂Ge₁.₈ and spontaneous generation of voltage in single crystal Gd₅Si₂Ge₂ and Gd." [Ames, Iowa : Iowa State University], 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3355553.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Oike, Hideaki. "Activation and Reactions of Si-Si and Si-Ge σ-Bonds by Bis(t-alkyl isocyanide)palladium(0) Complexes". Kyoto University, 1996. http://hdl.handle.net/2433/77780.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Cai, Feiyang. "Study of Si-Ge interdiffusion with highly n-type doping." Thesis, University of British Columbia, 2016. http://hdl.handle.net/2429/56429.

Full text

Abstract:

Silicon photonics has emerged as an effective solution to overcome the wiring limit imposed on electronic device (e.g. transistors) density and performance with continued scaling. In the past few decades, researchers all over the world have invested extensive effort on finding solutions to a Si-compatible lasing material system. Recently, Ge-on-Si lasers were demonstrated as promising candidates. Heavy n-type doping in Ge is the key technique to realize Ge lasing. However, Si-Ge interdiffusion during high-temperature growth or fabrication steps changes the distribution of Ge fraction and incre

APA, Harvard, Vancouver, ISO, and other styles

37

North, Stephen Michael. "Electronic structure of GaSb/GaAs and Si/Ge quantum dots." Thesis, University of Newcastle Upon Tyne, 2001. http://hdl.handle.net/10443/551.

Full text

Abstract:

There are significant differences between experiment and theoretical calculations of the electronic structure of GaSb/GaAs self-assembled quantum dots. Using a multi-band effective mass approximation it is shown that the influence of size and geometry of quantum dots has little or no effect in determining the hydrostatic strain. Furthermore, the valenceband ground state energies of the quantum dots studied are surprisingly consistent. This apparent paradox attributed to the influence of biaxial strain in shaping the heavy-hole and light-hole potentials. Consequently, it is shown that a simple,

APA, Harvard, Vancouver, ISO, and other styles

38

Aubin, Joris. "Low temperature epitaxy of Si, Ge, and Sn based alloys." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY058/document.

Full text

Abstract:

Les matériaux (Si)GeSn sont très prometteurs pour les composants optiques sur puce fonctionnant dans le Moyen Infra-Rouge (MIR). Lors de cette thèse de doctorat, j’ai étudié le Dépôt Chimique en Phase Vapeur d’alliages GeSn. L’épitaxie basse température de Ge pur, de Ge dopé phosphore et d’alliages GeSi a tout d’abord été explorée. L’utilisation du digermane (Ge2H6) au lieu du germane (GeH4) nous a permis d’augmenter considérablement la vitesse de croissance du germanium à des températures en dessous de425 °C. Des concentrations très importantes en atome de P électriquement actifs ont été atte

APA, Harvard, Vancouver, ISO, and other styles

39

Oh, Jungwoo. "Planar Ge photodetectors on Si substrates for Si/Ge-based optical receivers." Thesis, 2004. http://hdl.handle.net/2152/1378.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Oh, Jungwoo Campbell Joe. "Planar Ge photodetectors on Si substrates for Si/Ge-based optical receivers." 2004. http://repositories.lib.utexas.edu/bitstream/handle/2152/1378/ohj03800.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

KHATAMI, SEYEDEH NAZANIN. "Improving Efficiency of Thermoelectric Devices Made of Si-Ge, Si-Sn, Ge-Sn, and Si-Ge-Sn Binary and Ternary Alloys." 2016. https://scholarworks.umass.edu/masters_theses_2/426.

Full text

Abstract:

Thermoelectric devices with the ability to convert rejected heat into electricity are widely used in nowadays technology. Several studies have been done to improve the efficiency of these devices. However, because of the strong correlation between thermoelectric properties (electrical conductivity, Seebeck coefficient, and thermal conductivity including lattice and electron counterpart), improving ZT has always been a challenging task. In this study, thermal conductivity of group IV-based binary and ternary alloys such as SiGe, SiSn, GeSn, and SiGeSn has been studied. Phonon Boltzmann Transpor

APA, Harvard, Vancouver, ISO, and other styles

42

Pan, shiang-yuan, and 潘祥元. "Observation og Si-Ge Place Exchange on the Cl-terminated Ge/Si(100) surface." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/90696478775478779855.

Full text

Abstract:

碩士<br>國立交通大學<br>物理研究所<br>89<br>The thesis describes the observation of the exchange of surface Ge-Cl and Si-Cl bonds on the Cl-terminated Ge/Si(100) surface. We grew 0.4 ML、1.2 ML and 2.0 ML Ge on the clean Si(100) surface by atomic-layer epitaxy using Ge2H6 gas source. After Cl2 saturtation each surface atom bond to one Cl. Upon annealing the Ge/Si(100)：Cl sample to higher temperatures, synchrotron radiation was used to obtain the Si 2p、Ge 3d and Cl 2p photoemission spectra. Between 325 and 510 K, the Ge/Si(100)︰Cl surface remains largely unchanged. When the samples were anneale

APA, Harvard, Vancouver, ISO, and other styles

43

Peng, Yu Hwa. "Si/Ge Nano Optoelectronic Device." 2004. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2907200414040300.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Peng, Yu Hwa, and 彭鈺華. "Si/Ge Nano Optoelectronic Device." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/70321711722926251323.

Full text

Abstract:

博士<br>國立臺灣大學<br>電機工程學研究所<br>92<br>This thesis mainly focuses on Ge quantum dots (QDs) grown by ultra high vacuum chemical vapor deposition (UHVCVD). We have archived a density higher than 1011 cm-2 with informal QDs about 10%. We also have successfully fabricated optoelectronic devices by use of self-organized Ge QD nano structure. Different methods are designed to reduce the dark current for the devices grown with CVD and MBE respectively. In quantum dot infrared photodetector (QDIP) fabricated by MBE, we have demonstrated a QDIP in our preliminary work on Ge QDs devices. In IR responsivity,

APA, Harvard, Vancouver, ISO, and other styles

45

SHIH, YANG JOU, and 施泱汝. "Morphological transformations induced by Ge and Ge/Si deposition on the Si(111)-(7×7) surface." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/u33hsn.

Full text

Abstract:

碩士<br>國立中正大學<br>物理系研究所<br>107<br>We do our experiment under ultra-high vacuum condition. We have used a clean and well-reconstructed Si(111)-7×7 surface as the substrate for this experiment. In the experiment different amounts of Ge atoms have been evaporated on the surface. In addition, Ge and Si atoms have either simultaneously or separately deposited on the surface. By changing the surface temperature and the duration of heating after atom evaporation, different surface reconstructions and island structures have been observed. Scanning Tunneling Microscopy has been employed to study the sur

APA, Harvard, Vancouver, ISO, and other styles

46

Lin, Chu-Hsuan, and 林楚軒. "Si/Ge Metal-Insulator-Semiconductor Photodetectors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/93996635407824076515.

Full text

Abstract:

博士<br>國立臺灣大學<br>電子工程學研究所<br>96<br>In this dissertation, the Si/Ge metal-insulator-semiconductor (MIS) tunneling diodes are utilized as photodetectors, and it is proven that the MIS structure can reduce the dark current. We have demonstrated mid- and long- wavelength infrared detection by MIS SiGe/Si quantum dot infrared photodetectors (QDIPs). On the other hand, single crystalline thin-film structures obtained by wafer bonding and smart-cut can be applied to MIS near-infrared detectors and solar cells. First, δ doping is introduced in the QDIPs and quantum well infrared photodetectors (QWIPs).

APA, Harvard, Vancouver, ISO, and other styles

47

Yang, Chih Meng. "Manipulation of Si and Ge Crystallization." Thesis, 1997. https://thesis.library.caltech.edu/204/1/Yang_cm_1997.pdf.

Full text

Abstract:

<p>This thesis discusses methods for altering the crystallization kinetics of Si and Ge in order to obtain large-grained polycrystalline semiconductor thin films or size-selected semiconductor nanocrystals in silicon dioxide. Reduction of grain boundaries in polycrystalline semiconductor thin films is important for improving the performance of microelectronic devices because grain boundaries act as traps for charge carriers. Control of nanocrystal size and concentration in silicon dioxide is important in controlling the nanocrystal photoluminescence and electroluminescence characteristics. Res

APA, Harvard, Vancouver, ISO, and other styles

48

Lin, Chu-Hsuan. "Si/Ge Metal-Insulator-Semiconductor Photodetectors." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200823252900.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Ho, Wei-Shuo, and 何偉碩. "Si/Ge photodetectors and solar cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/30680004211061953610.

Full text

Abstract:

博士<br>國立臺灣大學<br>電子工程學研究所<br>100<br>In this dissertation, Si/Ge tunneling metal-oxide-semiconductor (MOS) photodectors and n-type silicon solar cells are investigated. Moore''s Law, which holds that the number of transistors on an IC doubles every 18 months. However, due to the physical limitation of CMOS scaling, global semiconductor industry now focusing on a new trend called “More-than-Moore”. By developing novel functions of Si/Ge based devices can add further values to semiconductor chips. Since Si/Ge based MOS photodetectors and solar cells are compatible with current process an

APA, Harvard, Vancouver, ISO, and other styles

50

Chen, Hung-Bin, and 陳弘斌. "Optical properties of Ge/Si/Ge quantum dot in multilayer structure." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/59065285991693145803.

Full text

Abstract:

碩士<br>國立中央大學<br>物理研究所<br>99<br>In this paper, we have studied the optical properties of Ge/Si/Ge quantum dots (QDs) structure by using Photoluminescence (PL) spectroscopy.And we use rapid thermal annealing process to improve its light efficiency.Comparing the PL measurements of Ge/Si/Ge QDs structure with Ge/Si QDs structure, the structural difference effect on optical properties is studied. According to the emission energy of annealed samples in excitation-powerdependent PL measurements, we found that Ge/Si/Ge QDs structure has higher emission energy and lower carriers confinement depth due t

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!