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Dissertations / Theses on the topic 'Si heterojunction solar cells'

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Published: 28 June 2021

Last updated: 29 July 2025

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1

Lau, Yin Ping. "Si/CdTe heterojunction fabricated by closed hot wall system." HKBU Institutional Repository, 1995. http://repository.hkbu.edu.hk/etd_ra/44.

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2

Martin, de Nicolas Silvia. "a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112253/document.

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Parmi les technologies photovoltaïques à base de silicium, les cellules solaires à hétérojonction a-Si:H/c-Si (HJ) ont montré une attention croissante en ce qui concerne leur fort potentiel d’amélioration du rendement et de la réduction de coûts. Dans cette thèse, des investigations sur les cellules solaires à hétérojonction a-Si:H/c-Si de type (n) développées à l'Institut National de l'Énergie Solaire sont présentées. Les aspects technologiques et physiques du dispositif à HJ ont été revus, en mettant l'accent sur la compréhension du rôle joué par la face arrière. À travers le développement e

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3

Meitzner, Karl. "Heterojunction-Assisted Impact Ionization and Other Free Carrier Dynamics in Si, ZnS/Si, and ZnSe/Si." Thesis, University of Oregon, 2015. http://hdl.handle.net/1794/19294.

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With increasing global energy demand and diminishing fossil fuel supplies, the development of clean and affordable renewable energy technology is more important than ever. Photovoltaic devices harvest the sun’s energy to produce electricity and produce very little pollution compared to nonrenewable sources. In order to make these devices affordable, however, technological advances are required. In this dissertation a novel photovoltaic device architecture that is designed to enhance sunlight-to-electricity conversion efficiency of photovoltaics is proposed and demonstrated. The increase in

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4

Gogolin, Ralf [Verfasser]. "Analysis and optimization of a-Si:H/c-Si heterojunction solar cells / Ralf Gogolin." Hannover : Technische Informationsbibliothek (TIB), 2016. http://d-nb.info/1099098130/34.

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5

Іващенко, Максим Миколайович, Максим Николаевич Иващенко, Maksym Mykolaiovych Ivashchenko, et al. "Design and Fabrication Heterojunction Solarcell of Si-CdS-ZnO Thin Film." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35487.

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Cadmium sulphide (CdS) is a prominent candidate to be used a buffer layer in Si based solar cell. In this study, absorber layer parameters thickness have been investigated by (SCAPS) to find out the higher conversion. Moreover, it is found that Jsc,Voc, η is increased for the absorber layer thickness of 500-600 nm and quantum efficiency is nearly overlap after the 600 nm thickness of the Si absorber layer. In addition, it is revealed that the highest efficiency cell can be achieved with the absorber layer thickness of 600 nm. From the simulation results, numerous influences of absorber la

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6

Pehlivan, Ozlem. "Growth And Morphological Characterization Of Intrinsic Hydrogenated Amorphous Silicon Thin Film For A-si:h/c-si Heterojunction Solar Cells." Phd thesis, METU, 2013. http://etd.lib.metu.edu.tr/upload/12615488/index.pdf.

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Passivation of the crystalline silicon (c-Si) wafer surface and decreasing the number of interface defects are basic requirements for development of high efficiency a-Si:H/c-Si heterojunction solar cells. Surface passivation is generally achieved by development of detailed silicon wafer cleaning processes and the optimization of PECVD parameters for the deposition of intrinsic hydrogenated amorphous silicon layer. a-Si:H layers are grown in UHV-PECVD system. Solar cells were deposited on the p type Cz-silicon substrates in the structure of Al front contact/a-Si:H(n)/a-Si:H(i)/c-Si(p)/Al back

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7

Müller, Thomas. "Heterojunction solar cells (a-Si, c-Si) investigations on PECV deposited hydrogenated silicon alloys for use as high quality surface passivation and emitter, BSF." Berlin Logos-Verl, 2009. http://d-nb.info/997563184/04.

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8

Hussain, Babar. "Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer." Thesis, The University of North Carolina at Charlotte, 2017. http://pqdtopen.proquest.com/#viewpdf?dispub=10258481.

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<p> The conversion efficiency of conventional silicon (Si) photovoltaic cells has not been improved significantly during last two decades but their cost decreased dramatically during this time. However, the higher price-per-watt of solar cells is still the main bottleneck in their widespread use for power generation. Therefore, new materials need to be explored for the fabrication of solar cells potentially with lower cost and higher efficiency. The n-type zinc oxide (n-ZnO) and p-type Si (p-Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to replace convention

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9

Jakkala, Pratheesh Kumar. "Fabrication of Si/InGaN Heterojunction Solar Cells by RF Sputtering Method: Improved Electrical and Optical Properties of Indium Gallium Nitride (InGaN) Thin Films." Ohio University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1490714042486824.

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10

Labrune, Martin. "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells." Phd thesis, Palaiseau, Ecole polytechnique, 2011. https://pastel.hal.science/docs/00/61/16/52/PDF/thesis_Martin_LABRUNE.pdf.

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This thesis presents a work which has been devoted to the growth of silicon thin ﬁlms on crystalline silicon for photovoltaic applications by means of RF PECVD. The primary goal of this work was to obtain an amorphous growth on any c-Si surface in order to provide an efﬁcient passivation, as required in heterojunction solar cells. Indeed, we demonstrated that epitaxial or mixed phase growths, easy to obtain on (100) Si, would lead to poor surface passivation. We proved that growing a few nm thin a-Si1-xCx:H alloy ﬁlm was an efﬁcient, stable and reproducible way to hinder epitaxy while keeping

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11

Labrune, Martin. "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells." Phd thesis, Ecole Polytechnique X, 2011. http://pastel.archives-ouvertes.fr/pastel-00611652.

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This thesis presents a work which has been devoted to the growth of silicon thin ﬁlms on crystalline silicon for photovoltaic applications by means of RF PECVD. The primary goal of this work was to obtain an amorphous growth on any c-Si surface in order to provide an efﬁcient passivation, as required in heterojunction solar cells. Indeed, we demonstrated that epitaxial or mixed phase growths, easy to obtain on (100) Si, would lead to poor surface passivation. We proved that growing a few nm thin a-Si1-xCx:H alloy ﬁlm was an efﬁcient, stable and reproducible way to hinder epitaxy while keeping

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12

Hertl, Vít. "Studium fotovoltaických nanostruktur mikroskopickými metodami." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2018. http://www.nusl.cz/ntk/nusl-444405.

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V této diplomové práci je nejprve ve zkratce uvedena teorie fyziky solárních článků, kde jsou zmíněny klíčové procesy ovlivňující účinnost konverze slunečního záření na elektrickou energii. Dále je předložena rešerše o fotovoltaických nanostrukturách (nanodráty, nanokrystaly), jejichž implementací je možné účinnost solárních článků zvýšit. V přehledu experimentálních technik ke zkoumání fotovoltaických nanostruktur je důraz kladen zejména na korelativní měření pomocí SEM a AFM, vodivostního AFM, měření EBIC a mikroskopické měření elektroluminiscence. V experimentální části jsou předloženy výsl

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13

Favre, Wilfried. "Silicium de type n pour cellules à hétérojonctions : caractérisations et modélisations." Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00635222.

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Les cellules à hétérojonctions de silicium fabriquées par croissance de couches minces de silicium amorphe hydrogéné (a-Si :H) à basse température sur des substrats de silicium cristallin (c-Si) peuvent atteindre des rendements de conversion photovoltaïque élevés (η=23 % démontré). Les efforts de recherche ayant principalement été orientés vers le cristallin de type p jusqu'à présent en France, ce travail s'attache à l'étude du type n pour d'une part déterminer les performances auxquelles s'attendre avec cette nouvelle filière et d'autre part les améliorer. Pour cela, nous avons mis en œuvre d

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14

Yu, Fei. "Graphene-enhanced Polymer Bulk-heterojunction Solar Cells." University of Cincinnati / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1439310775.

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15

Shih, Jeanne-Louise. "Zinc oxide-silicon heterojunction solar cells by sputtering." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=112583.

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Heterojunctions of n-ZnO/p-Si solar cells were fabricated by RF sputtering ZnO:Al onto boron-doped (100) silicon (Si) substrates. Zinc Oxide (ZnO) films were also deposited onto soda lime glass for electrical measurements. Sheet resistance measurements were performed with a four-point-probe on the glass samples. Values for samples evacuated for 14 hours prior to deposition increased from 7.9 to 10.17 and 11.5 O/&squ; for 40 W, 120 and 160 W in RF power respectively. In contrast, those evacuated for 2 hours started with a higher value of 22.5 O/&squ;, and decreased down to 7.6 and 5.8 O/&squ;.

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16

Cheung, Kai-yin, and 張啓賢. "Metallopolyyne polymers based bulk heterojunction (BHJ) solar cells." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B42841719.

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17

Brenner, Thomas Johannes Konrad. "Device physics of bulk heterojunction polymer solar cells." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610312.

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18

Cheung, Kai-yin. "Metallopolyyne polymers based bulk heterojunction (BHJ) solar cells." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B42841719.

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19

Feteha, Mohamed Yousef Mohamed. "Heterojunction AlGaAs-GaAs solar cells for space applications." Thesis, University of Central Lancashire, 1995. http://clok.uclan.ac.uk/18836/.

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Two types of solar cell AlGaAs-GaAs structures which are heteroface and triple heterojunction are investigated in this study. A complete theoretical study including optimisation for the optical properties ( transmission and reflection) of the heteroface Alo.sGao.2As- GaAs space solar cell is presented. The grid shadow and window layer effects, angle of incidence and the effects of the layer design parameters for AR-coating and window layer on the optical properties are considered in the calculations. A new structure for space solar cell which consists of double heterojunction AlGaAsGaAs struc

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20

LA, NOTTE LUCA. "Scale-up of bulk-heterojunction polymer solar cells." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2013. http://hdl.handle.net/2108/203233.

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Polymer solar cells (PSCs) have recently reported a marked improvement in conversion efficiency, exceeding 10%, thus reducing the gap with more mature photovoltaic technologies. Now the transfer of such performances to the large scale has to be carried out by using industrially relevant techniques such as spray and slot die coating, and inkjet, gravure, flexographic and screen printing. This work is focused on the scale up of the PSCs by exploiting spray coating, a simple and low cost method already successfully applied to PSC layers. Firstly in literature a fully sprayed module was fabricated

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21

Levitsky, I. A. "Carbon Nanotubes - Si Hybrid Solar Cells." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35493.

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This short review describes recent results in the field of carbon nanotube (CNT) – Si hybrid photovolta-ics (PV) focusing on advantages of semiconducting carbon nanotubes over other organic materials used in organic- Si composite photosensing materials. Possible mechanisms of charge phogeneration at CNT- Si in-terface and chargte transport are discussed. Perspectives and future trends in research of this novel class of PV nanohybrids are presented as well. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35493

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22

Garozzo, Cristina Annamaria. "Si based nanostructures for solar cells." Thesis, Universita' degli Studi di Catania, 2011. http://hdl.handle.net/10761/108.

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Photovoltaic technology has received increased attention as one of the most promising approach to carbon-free energy production. Bulk silicon cells, which convert between 14 and 17% of incident light into electricity, make up 90% of the solar cell market. Silicon is widely used because it is the second most abundant element in the earth's crust, and because the electronics industry has already developed infrastructure to process it. Yet the pricey and complicated manufacturing makes these photovoltaic (PV) systems more expensive per kW/h than conventional energy sources. These limitations have

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23

Muñoz, Cervantes Delfina. "Silicon heterojunction solar cells obtained by Hot-Wire CVD." Doctoral thesis, Universitat Politècnica de Catalunya, 2008. http://hdl.handle.net/10803/6354.

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El elevado coste de producción de los módulos de silicio cristalino (c-Si) dificulta el progreso de la industria fotovoltaica como una alternativa viable para la producción de energía limpia. Por esta razón, los fabricantes de células solares buscan diferentes alternativas para conseguir la deseada reducción de costes. Una opción es reducir el grosor de las obleas (<200 m) para obtener así más obleas por lingote. Sin embargo, al reducir el grosor del sustrato es indispensable reducir también la recombinación superficial ya que ésta es crítica para mantener altas eficiencias en los disp

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24

Ooi, Zi En. "On the Corrected Photocurrent ofOrganic Bulk Heterojunction Solar Cells." Thesis, University of London, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490944.

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The measured photocurrent ofa solar cell may be considered the sum ofa photo-generated current due solely to the influx of photons, and a photovoltage-induced current that is injected at the electrodes. Correcting the measured photocurrent for the dark current yields the voltage dependence of the photogenerated current alone. This corrected photocurrent can provide important insight into the processes governing the behaviour of a solar cell, yet is seldom measured or discussed within the community. In this dissertation, an original experimental technique designed specifically for the reliable

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25

Painter, J. D. "Recrystallisation and interdiffusion in CdTe-CdS heterojunction solar cells." Thesis, Cranfield University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.508015.

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26

Abrusci, Agnese. "Bulk heterojunction solar cells based on a polyfluorene copolymer." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611593.

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27

Chang, Shang-wen. "Cu₂S/ZnCdS thin film heterojunction solar cell studies." Diss., Virginia Polytechnic Institute and State University, 1985. http://hdl.handle.net/10919/54740.

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Cu₂S/CdS solar cells have been studied extensively for the past two decades due to their potentially high efficiencies per unit cost. The operation and characteristics of Cu₂S/CdS solar cells are fairly well understood. However, the properties of the newer Cu₂S/ZnCdS cell type are not well understood. The main goals of this thesis were to compare Cu₂S/CdS and Cu₂S/ZnCdS cells using Cu₂S/CdS cells as a reference, and to understand the operation and properties of Cu₂S/ZnCdS cells in order to improve cell performance. Four different measurements were used in this research to achieve these goals.

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28

Augustine, B. (Bobins). "Efficiency and stability studies for organic bulk heterojunction solar cells." Doctoral thesis, Oulun yliopisto, 2016. http://urn.fi/urn:isbn:9789526214436.

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Abstract The qualitative and quantitative characteristics of each component layer constituting the structure of organic bulk heterojunction solar cells (OSC-BHJ) contribute significantly towards its overall performance. One of the prevalent issues resulting in reduced device efficiency is due to the conformational inhomogeneities in the active and buffer layers. The mechanical stress, extended thermal exposure and presence of mutually reactive component layers etc., affects negatively on the device stability. Effective methods to address these issues will be extensively benefited by the indust

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29

Al-Dmour, Hmoud. "Solar cells based on the nc-TiOâ‚‚ semiconducting polymer heterojunction." Thesis, Bangor University, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.445094.

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30

Gutta, Venkatesh. "INVESTIGATIONS OF CuInTe2 / CdS & CdTe / CdS HETEROJUNCTION SOLAR CELLS." UKnowledge, 2011. http://uknowledge.uky.edu/gradschool_theses/654.

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Thin film solar cells of Copper Indium Telluride and Cadmium Sulfide junctions were fabricated on plain ITO glass slides and also on those coated with intrinsic Tin Oxide. CdS was deposited through chemical bath deposition and CIT by electrodeposition. Both compounds were subjected to annealing at temperatures between 350°C and 500°C which produced more uniform film thicknesses and larger grain sizes. The CIT/ CdS junction was characterized after performing XRD and spectral absorption of individual compounds. Studies were also made on CdS / CdTe solar cells with respect to effect of annealing

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31

Han, Tianyan. "Bulk heterojunction solar cells based on solution-processed triazatruxene derivatives." Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAD036/document.

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La conception de cellules solaires organiques de type hétérojonction en volume a été proposée pour la première fois en 1990. Ces dispositifs sont composés d’un mélange de polymères conjugués, donneurs d’électrons, et de fullerènes, accepteur d’électrons, et ont pour la première fois permis d’atteindre un rendement de conversion énergétique significatif (de l’ordre de 2%) avec des semi-conducteurs organiques. Dans ce contexte, cette thèse a porté sur l'étude approfondie d’une série de molécules donneurs d’électrons de forme d’haltère, dont le groupement planaire est l’unité triazatruxène (TAT)

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32

Chiou, Ta-Cheng, and 邱大晟. "a-Si:H/c-Si Heterojunction Solar Cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/23114112769082968040.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>100<br>In this thesis, the structure, optical and electrical properties of the hydrogenated amorphous silicon ( a-Si:H ) thin films which is fabricated under 140℃ are investigated first. The hydrogen dilution ratio Xg=0.66 is chosen for proper deposition parameter to fabricate a-Si:H/c-Si heterojunction solar cells. Then (i)a-Si/ (n)a-Si hetrojunction is studied by means of current-voltage characteristics measurement. In order to improve (p)a-Si:H/ (n)c-Si interface, two ways are chosen to achieve this goal. Insert an intrinsic a-Si:H at (p)a-Si:H/ (n)c-Si interface

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33

Chen, Li-Siang, and 陳立翔. "The Study of AZO/n-Si Heterojunction Solar Cells." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/98001872180886746914.

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碩士<br>正修科技大學<br>電子工程研究所<br>103<br>In this study, Al doped zinc oxide (AZO) films have been prepared by direct current (DC) magnetron sputtering technique with various substrate temperature in the range of RT ,100℃ ,150℃ ,200℃ ,250℃ on glass and N-Si substrates. The temperature of substrate at 250℃ exhibited the lowest electrical resistivity of 1.92×10-3 Ω-cm, carrier mobility of 9.27 cm2/Vs, highest carrier concentration of 3.51x1020 cm-3, and visible range (400-800 nm) transmittance about 80%. However the cell fabricated at 250℃ didn’t show the highest efficiency. Speculation the temperature

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34

Pan, Yen-Chih, and 潘彥志. "Optimized periodic surface texture for heterojunction a-Si/c-Si solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/40522688646943529711.

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碩士<br>國立東華大學<br>光電工程學系<br>99<br>Because of the finite deposits of coal, oil and gas in earth, people have to search for a renewable energy. For the reason that solar energy will never run out, solar cell, which can turn light into electricity, is most considerable. The conversion efficiency of solar cell is still low due to the band gap of absorption layer, carrier recombination and surface reflection. As the thickness of a-Si is enough, the incident light waves can be sandwiched in a-Si layer by air and c-Si layer to result in planar waveguide. Light trapping from surface texturing and plan

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Liu, Yi-heng, and 劉以珩. "Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/8ghv47.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>106<br>Current silicon solar cell is developing towards ultra-thin feature for cost lowering, recombination suppressing and potential flexible applications. In this work, we examine the viability of chalcopyrite materials assisting ultra-thin solar cells performance with simulation software AFORS-HET. P type silicon with n type surface doping is support with CISe for light absorption, between them compositional-variated SiGe buffer layer to lower lattice mis-match (SCH-1 layout). Simulation shows Ge induces narrow bandgap and large energy barrier, witch severel

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陳啟文. "Study of surface treatments on AZO/Si heterojunction solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/76309886539122579041.

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碩士<br>國立臺灣師範大學<br>機電科技研究所<br>100<br>In this study, for the purpose of removing silicon dioxide on the p-type Si substrate, three different acids were used, buffered oxide etch solution (BOE), hydrogen peroxide (H2O2), and dilute hydrochloric acid (HCl).Additionally, the DC magnetron sputtering method was utilized under the process temperature of 298 K and 573 K. A layer of 100 nm AZO thin film was first deposited on the Si substrate. During the deposition, a flow of 40 sccm argon was infused. Al was sputtered on the bottom of the Si substrate as the bottom electrode. After the AZO/Si heterojun

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Tseng, Kao-Wu, and 曾高吾. "Characteristics of SiGe/Si Heterojunction Solar Cell." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/35022300992060575424.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>95<br>In recent years, SiGe/Si heterostructure has attracted great attention for its applications in electronic devices and optoelectronic devices. In this thesis, we use the molecular beam epitaxy technology to deposit SiGe alloy on silicon substrate to substitute for the conventional silicon material and to improve the conversion efficiency of solar cells. The influence of the doping concentration and thickness of single-crystal on device characteristics are discussed. Finally, we use simulator of solar energy AM1.5G under the illuminated condition. The four impor

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Chien, Ming-Hao, and 簡明澔. "Efficiency Improvement in Novel p-NiO/n-Si Heterojunction Solar Cells." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/43539162271434900627.

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碩士<br>正修科技大學<br>電子工程研究所<br>102<br>This study successfully fabricates p-Ni1-xO/n-Si heterojunction solar cell using the RF magnetron sputtering. The experiment is divided into three parts to investigate and the conversion efficiency of cell upgraded from 3.39% to 6.31%. First part is to investigate the influence of the RF sputtering power on the performance of p-Ni1-xO/n-Si solar cells, through the four point probe, UV-Vis, capacitance-voltage (C-V), light and dark current-voltage (I-V) measurements. The results show that the cell fabricated at sputtering power of 100 W has the highest conversi

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Tseng, Wen-Yu, and 曾雯譽. "Characteristics of FZO/Si Heterojunction Solar Cells by RF Magnetron Sputtering." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/95703694872102293976.

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碩士<br>正修科技大學<br>電子工程研究所<br>101<br>In this study, fluorine doped zinc oxide (FZO) films have been prepared by RF reactive magnetron sputtering on glass and p-Si substrates. The effects of substrate temperature (from RT to 300°C) on optical and electrical properties of FZO thin films were first studied. The results show that FZO thin film deposited at substrate temperatures of 150°C has largest grain size of 17.3 nm, the lowest resistivity of 6x10-2 Ω-cm, and visible range(400-800 nm) transmittance about 90%. However the cell fabricated at various substrate temperatures shows very poor conversio

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40

Cheng, Yu-Song, and 鄭育松. "Investigation of silicon base p-NiO/n-Si heterojunction solar cells." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/68835472577227961181.

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碩士<br>正修科技大學<br>電子工程研究所<br>101<br>This study reports the fabrication of p-type Ni1-xO:Li/n-Si heterojunction solar cells (HJSCs) by depositing Li-doped Ni1-xO (p-Ni1-xO:Li) on a n-Si substrate (P+/n) using RF magnetron sputtering. The main investigation in this study will divide two parts. Firstly, films deposited on glass and silicon substrates at various working pressures (partial pressure of argon) and temperatures were first analyzed to estimate the optoelectrical properties of p-Ni1-xO: Li thin films. According to the results of experiments, the Ni1-xO:Li thin films deposited at 6 mTorr a

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Wu, Jun-chieh, and 吳潤節. "Investigation of ITO Layers for Applications in a-Si/c-Si Heterojunction Solar Cells." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/03396366587993201092.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>97<br>Indium tin oxide (ITO) layers are usually used for a-Si/c-Si heterojunction solar cells, because of their high conductivity and high transparency in the visible region of the spectrum. ITO layers also can be used for antireflecting to reduce the reflectance losses. ITO films were deposited by RF-sputtering in this thesis. In our experiment, the lowest resitivity of ITO layer was 3.34 × 10-4 Ωcm at the thickness of 110 nm. The average transmittance in the visible region can higher than 92% and the figure of merit value was 1.53 × 10-2 Ω-1. We can reduce cost

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Hsieh, Wen-Feng, and 謝文烽. "Improved Photovoltaic Characteristics of Amorphous-Si/Crystalline-Si Heterojunction Solar Cells Using Laser Scribing Technology." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/qf63z7.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>98<br>In this thesis, the improved photovoltaic characteristics of silicon heterojunction were investigated by mean of the very-high-frequency (VHF, 60 MHz) plasma-enhanced chemical vapour deposition (PECVD) under well-controlled discharge conditions. The modulated parameters, including the H2 plasma treatment, the silane concentration [SC %=[SiH4/(SiH4+H2)]×100 %], as well as doping concentration of n-type a-Si [Yn %= PH3/(SiH4+H2+PH3)×100 %] on the characteristics of the heterojunction solar cell were demonstrated. The deposition rates, the optical energy gap

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Lin, Tzu-Yin, and 林姿吟. "Si Heterojunction Solar Cells Employing Broadband and Omnidirectional Light-Harvesting Hierarchical Structures." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/93472963580388642211.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>101<br>In this thesis, the broadband and omnidirectional light-trapping scheme employing microscale and nanoscale structures are introduced to Si heterojunction solar cells for boosting the photovoltaic performances, and the optical and carrier recombination characteristics of the devices are discussed in detail. In the first part, hierarchical structures consisting of grooves and pyramids are demonstrated in a-Si/c-Si heterojunction solar cells via isotropic etching followed by anisotropic etching. The structure combines the excellent photo managements and creation

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Ferrara, Manuela [Verfasser]. "Electroluminescence of a-Si/c-Si-Heterojunction solar cells after high energy irradiation / von Manuela Ferrara." 2009. http://d-nb.info/995437394/34.

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Huang, Yi-Teng, and 黃奕騰. "Improvement of a-Si:H/c-Si Heterojunction Solar Cells through higher deposition temperature." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/47892819236878299687.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>104<br>In a-Si:H/c-Si heterojunction solar cells, the key factor to the high performance are the a-Si:H/c-Si heterointerface and anti-reflection structure. First, we use the high temperature (250 ℃) to deposit a-Si:H layers to improve the interface passivation due to the films quality is better. By inserting high temperature deposition of intrinsic a-Si:H to be the passivation layer, the open circuit voltage (Voc) is apparently increased. Moreover, we concentrate on the interface treatment of the a-Si:H/c-Si interface. Before depositing the a-Si:H films by PECVD, we

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Chen, Yan-Lung, and 陳彥龍. "Study of In2S3 Nanostructures by Chemical Bath Deposition for p-Si Heterojunction Solar Cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/6xrnct.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>99<br>The article mainly consists of three items. Part I, we reported the surface morphology and the optical properties of β-In2S3 mircopompons phosphors and nanorods of In2S3 thin films, respectively. Part II, textured structures can improve the antireflection by wet anisotropic etching. Part III, a novel AZO/In2S3/p-Si hetero-junction solar cell was fabricated. Part I : Nanorods of β-In2S3 thin films and micro-pompons of β-In2S3 phosphors were prepared by chemical bath deposition (CBD) technique at lower temperature. In general, the surface morphology of the m

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Huang, Wan-Yu, and 黃琬瑜. "Using Metal Catalyst to Form Si Antireflection Layer and Its Applications on Heterojunction Solar Cells." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/17851701659878181443.

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Lin, An-Hua, and 林安樺. "Highly Efficient Back-Contact Cross-Finger Type PEDOT:PSS/Si Heterojunction Solar Cell." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/74081702605300287811.

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碩士<br>國立交通大學<br>應用化學系碩博士班<br>104<br>This thesis aims at the improvement of back-junction type PEDOT:PSS/Si hybrid solar cells, which was first proposed and demonstrated by Zieke and coworkers with a decent power conversion efficiency. The limited efficiency of current PEDOT:PSS/Si solar cells were basically due to the facts that the heterojunction was located on the front of the cell, resulting in a parasitic light absorption within the organic material. In addition, the rear surface of those front-junction solar cells was usually poorly passivated. To overcome above difficulties, one must pla

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Chen, Shih-Yen, and 陳世晏. "The effect of anti-reflection structure on the performance of a-Si:H/c-Si Heterojunction Solar Cells." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/96049430264088863934.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>101<br>In the past few years, the anti-reflection structure was largely used in photovoltaic devices to enhance the light extraction. In order to improve the solar cell conversion efficiency, the anti-reflection structure is studied. The heterojunction solar cell without anti-reflection structure is fabricated for comparison. Besides, inserting intrinsic layer is a way to improve efficiency. The (p) a-Si/ (n) c-Si interface is passivated to reduce leakage current. On the other hand, the properties of textured structure are investigated including optical reflectance

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Dai, Wen-Ting, and 戴汶廷. "Study of ZnS and CdS Thin Films by Chemical Bath Deposition for p-Si Heterojunction Solar Cells." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/7hv4kf.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>98<br>For this study which used low-cost, low-temperature chemical bath deposition(CBD) to grow cadmium sulfide(CdS) and zinc sulfide(ZnS) thin films semiconductor n-type heterojunction application of p-Si solar cells. Preparation of CdS and ZnS thin films, the concentration and annealing conditions play a very important role. Good transmittance, uniformity, crystal structure of CdS/ZnS thin films by field emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), energy dispersive spectroscopy(EDS) and UV / visible spectrometer to observe the film

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