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Journal articles on the topic 'Si heterojunction solar cells'

Author: Grafiati

Published: 28 June 2021

Last updated: 29 July 2025

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1

Lin, C. H. "Si/Ge/Si double heterojunction solar cells." Thin Solid Films 518, no. 6 (2010): S255—S258. http://dx.doi.org/10.1016/j.tsf.2009.10.101.

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Hafdi, Zoubeida. "Electrical and Optical Characterization of Non-Hydrogenated a-Si/c-Si Heterojunction Solar Cells." Journal of Renewable Energies 24, no. 2 (2021): 202–13. http://dx.doi.org/10.54966/jreen.v24i2.981.

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This work deals with the performance of a heterojunction with intrinsic thin layer solar cell by sputtering silicon on p-type crystalline silicon substrate in argon ambient without hydrogen addition. This first effort was an attempt to use cost-effective means to convert light into electricity and to find fabrication processes which use fewer and cheaper materials for the fabrication of solar cells. Since transport mechanisms of amorphous silicon/crystalline silicon heterojunctions are still under investigation, the aim is to examine the behavior of the fabricated samples under electrical and

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Zerbo, Bienlo Flora, Mircea Modreanu, Ian Povey, et al. "Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics." Crystals 12, no. 10 (2022): 1363. http://dx.doi.org/10.3390/cryst12101363.

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Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-silicon heterojunction solar cells, consisting of a preliminary study of the MoS2 material and numerical device simulations of MoS2/Si heterojunction solar cells, using SILVACO ATLAS. Through the optical and structural characterization of MoS2/SiO2/Si samples, we found a significant sensitivity of the MoS2 to ambient oxidation. Optical ellipsometry

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Zelentsov, K. S., and A. S. Gudovskikh. "GaP/Si anisotype heterojunction solar cells." Journal of Physics: Conference Series 741 (August 2016): 012096. http://dx.doi.org/10.1088/1742-6596/741/1/012096.

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Ruan, Kaiqun, Ke Ding, Yuming Wang, et al. "Flexible graphene/silicon heterojunction solar cells." Journal of Materials Chemistry A 3, no. 27 (2015): 14370–77. http://dx.doi.org/10.1039/c5ta03652f.

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6

Dai, Ruijie, Tengzuo Huang, Weijie Zhou, et al. "Improved Interfacial Contact for Pyramidal Texturing of Silicon Heterojunction Solar Cells." Molecules 27, no. 5 (2022): 1710. http://dx.doi.org/10.3390/molecules27051710.

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Reducing the surface reflectivity of silicon substrates is essential for preparing high-performance Si-based solar cells. We synthesized pyramid-nanowire-structured Si (Si-PNWs) anti-reflection substrates, which have excellent light-trapping ability (<4% reflectance). Furthermore, diethyl phthalate (DEP), a water-insoluble phthalic acid ester, was applied to optimize the Si-PNWs/PEDOT:PSS interface; the photoelectric conversion efficiency of heterojunction solar cells was shown to increase from 9.82% to 13.48%. We performed a detailed examination of the shape and optical characteristics of

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Nakamura, Motonori, Keisuke Sugimoto, Junichiro Kono, and Koji Takamura. "Polarization-dependent conversion efficiency of carbon nanotube-Si heterojunction solar cells based on aligned carbon nanotube films." Japanese Journal of Applied Physics 61, no. 3 (2022): 031006. http://dx.doi.org/10.35848/1347-4065/ac52b9.

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Abstract We have fabricated solar cells that implement heterojunctions of Si and aligned carbon nanotube (CNT) films. Polarization-dependent optical absorption of highly aligned CNTs led to polarization-dependent conversion efficiencies, which in turn provided insight into the role of the CNT layer in the power generation mechanism in these heterojunction solar cells. When the incident light polarization was parallel to the CNT alignment direction so that the light absorption in the CNT layer was maximized, the short circuit photocurrent decreased by ∼25%. This indicates that electron–hole pai

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Yamamoto, Hiroshi, Yoshirou Takaba, Yuji Komatsu та ін. "High-efficiency μc-Si/c-Si heterojunction solar cells". Solar Energy Materials and Solar Cells 74, № 1-4 (2002): 525–31. http://dx.doi.org/10.1016/s0927-0248(02)00071-5.

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9

Yamamoto, Kenji, Kunta Yoshikawa, Hisashi Uzu, and Daisuke Adachi. "High-efficiency heterojunction crystalline Si solar cells." Japanese Journal of Applied Physics 57, no. 8S3 (2018): 08RB20. http://dx.doi.org/10.7567/jjap.57.08rb20.

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10

Chen, Li, Xinliang Chen, Yiming Liu, Ying Zhao, and Xiaodan Zhang. "Research on ZnO/Si heterojunction solar cells." Journal of Semiconductors 38, no. 5 (2017): 054005. http://dx.doi.org/10.1088/1674-4926/38/5/054005.

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Hayashi, Toshiya, Takehiro Nishikura, Kazuhiro Nishimura, and Yoshinori Ema. "p-Si/n-CdS Heterojunction Solar Cells." Japanese Journal of Applied Physics 28, Part 1, No. 7 (1989): 1174–77. http://dx.doi.org/10.1143/jjap.28.1174.

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12

Gudovskikh, A. S., K. S. Zelentsov, A. I. Baranov, et al. "Study of GaP/Si Heterojunction Solar Cells." Energy Procedia 102 (December 2016): 56–63. http://dx.doi.org/10.1016/j.egypro.2016.11.318.

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13

Anderson, W. A., B. Jagannathan, and E. Klementieva. "Lightweight, thin-film Si heterojunction solar cells." Progress in Photovoltaics: Research and Applications 5, no. 6 (1997): 433–41. http://dx.doi.org/10.1002/(sici)1099-159x(199711/12)5:6<433::aid-pip195>3.0.co;2-p.

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14

Wahari, I., and I. Halidou. "SCAPS-1D Numerical Simulation of Homojunction and Heterojunction ZnO/Si Solar Cells." Asian Journal of Physical and Chemical Sciences 13, no. 3 (2025): 55–67. https://doi.org/10.9734/ajopacs/2025/v13i3251.

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In this article, numerical simulations of the electrical current-voltage characteristics of an n-Si / p-Si homojunction solar cell and an n-ZnO / p-Si heterojunction solar cell are performed. In order to find the optimal structure of the solar cells, numerical modelling using SCAPS-1D (Solar Cell Capacitance Simulator One Dimension) is performed. We study the effect of both emitter and base thicknesses and doping on the cell output parameters which are open circuit voltage (Voc), short circuit current density (Jcc), form factor (FF) and conversion efficiency (n). A comparison between the homoj

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15

Xu, Yan Li, and Jin Hua Li. "Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction." Advanced Materials Research 399-401 (November 2011): 1477–80. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.1477.

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n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the ph

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16

Fara, Laurentiu, Irinela Chilibon, Dan Craciunescu, Alexandru Diaconu, and Silvian Fara. "Review: Heterojunction Tandem Solar Cells on Si-Based Metal Oxides." Energies 16, no. 7 (2023): 3033. http://dx.doi.org/10.3390/en16073033.

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PV technology offers a sustainable solution to the increased energy demand especially based on mono- and polycrystalline silicon solar cells. The most recent years have allowed the successful development of perovskite and tandem heterojunction Si-based solar cells with energy conversion efficiency over 28%. The metal oxide heterojunction tandem solar cells have a great potential application in the future photovoltaic field. Cu2O (band gap of 2.07 eV) and ZnO (band gap of 3.3 eV) are very good materials for solar cells and their features completely justify the high interest for the research of

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Калиновский, В. С., Е. И. Теруков, Е. В. Контрош, В. Н. Вербицкий та A. С. Титов. "Радиационная стойкость гетеропереходных солнечных элементов alpha-Si : H/Si с тонким внутренним слоем i-alpha-Si : H". Письма в журнал технической физики 44, № 17 (2018): 95. http://dx.doi.org/10.21883/pjtf.2018.17.46576.17283.

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AbstractWe have studied the degradation of photoelectric characteristics of heterojunction solar cell samples based on α-Si:H/Si structures upon irradiation by electrons with an energy of 3.8 MeV and fluences of 1 × 10^12–1 × 10^14 cm^–2. It is shown that the efficiency of the samples of heterojunction solar cell elements under the conditions of AM0 illumination (0.136 W/cm^2) is reduced by 25% at a fluence of 2 × 10^13 cm^–2. This is more than an order of magnitude higher than the critical fluence value achieved previously when silicon solar cells with a p–n junction and an n -type base were

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18

Mamedov, Huseyn, Syed Ismat Shah, Archil Chirakadze, Vusal Mammadov, Vusala Mammadova, and Khumar Ahmedova. "Photovoltaic performance of p-Si/Cd1-xZnxO heterojunctions." Photonics Letters of Poland 10, no. 1 (2018): 26. http://dx.doi.org/10.4302/plp.v10i1.797.

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Heterojunctions of p-Si/Cd1-xZnxO were synthesized by depositing of Cd1-xZnxO films on p-Si substrates by electrochemical deposition. The morphological properties of the films were studied by scanning microscopy. The electric and photoelectrical properties of heterojunctions were investigated depending on the deposition potential and films composition. Heterojunctions of p-Si/Cd1-xZnxO, which deposited at cathode potential of -1.2 V, shows good rectification (k=1640). Under AM1.5 conditions the maximal values of open-circuit voltage, short-circuit current, fill factor and efficiency of our bes

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19

Yusupov, Fakhriddin T., Tokhirbek I. Rakhmonov, Mekhriddin F. Akhmadjonov, Muminjon M. Madrahimov, and Sherzod Sh Abdullayev. "Enhancing ZnO/Si Heterojunction Solar Cells: A Combined Experimental And Simulation Approach." East European Journal of Physics, no. 3 (September 2, 2024): 425–34. http://dx.doi.org/10.26565/2312-4334-2024-3-51.

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In this study, we explore the fabrication and optimization of ZnO/Si heterojunction solar cells to enhance their performance through precise control of electron affinity and bandgap properties. ZnO thin films were synthesized using thermal oxidation in a high-vacuum chamber, followed by annealing to improve crystallinity and electrical characteristics. The photovoltaic performance of the ZnO/Si heterojunction solar cells was systematically characterized, and Quantum ESPRESSO simulations were employed to refine the electronic properties of ZnO. Our results show significant improvements in open-

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20

Nawaz, Muhammad. "Design Analysis of a-Si/c-Si HIT Solar Cells." Advances in Science and Technology 74 (October 2010): 131–36. http://dx.doi.org/10.4028/www.scientific.net/ast.74.131.

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A theoretical design analysis using numerical two dimensional computer aided design tool (i.e., TCAD) is presented for a-Si/c-Si based heterojunction (HJ) solar cells. A set of optical beam propagation models, complex refractive index models and defect models for a-Si material implemented (in-built) in the simulation software are first evaluated for single (SHJ) and double heterojunction (DHJ) devices. Assessment is further carried out by varying physical parameters of the layer structures such as doping, thickness of the c-Si and a-Si layers, defect density in the a-Si layer and bandgap disco

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21

Chao, Xiong, Li Hua Ding, Xiao Jin, et al. "Study the I-V and C-V Characterization of n-ZnO/p-Si Heterojunction." Advanced Materials Research 690-693 (May 2013): 607–10. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.607.

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A type n conductance of ZnO thin film was deposited on the p-Si filim by magnetron sputtering Al doped ZnO ceramic target, and the ZnO/p-Si heterojunction was preparated. The photoelectric properties, charge carrier transport mechanism were studied by testing the I-V, C-V characteristics with illumination and without illumination. The results shows that there exists a good rectifying properties and photoelectric response for ZnO/p-Si heterojunctions, and can be widely used in photoelectric detection and fields of solar cells. As the conduction band and valence band offset in the ZnO/p-Si heter

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22

Park, Hyomin, Sung Ju Tark, Chan Seok Kim, et al. "Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/794876.

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To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a

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23

Tseng, Shao-Ze, Chang-Rong Lin, Hung-Sen Wei, Chia-Hua Chan, and Sheng-Hui Chen. "Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering." International Journal of Photoenergy 2014 (2014): 1–10. http://dx.doi.org/10.1155/2014/707543.

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This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction c

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24

Zhang, Zexia, Tongxiang Cui, Ruitao Lv, et al. "Improved Efficiency of Graphene/Si Heterojunction Solar Cells by Optimizing Hydrocarbon Feed Rate." Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/359305.

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Four different graphene films were synthesized via chemical vapor deposition by using acetonitrile with feed rates of 0.01, 0.02, 0.04, and 0.06 mL/min. Heterojunction solar cells were assembled by transferring as-synthesized graphene films onton-Si. Solar cells based on graphene samples produced at 0.01, 0.02, 0.04, and 0.06 mL/min demonstrate power conversion efficiencies of 2.26%, 2.10%, 1.02%, and 0.94%, respectively. When HNO3was used to dope the graphene films, the corresponding photovoltaic efficiencies were increased to 4.98%, 4.19%, 2.04%, and 1.74%, respectively. Mechanism for the im

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Focsa, A., I. Gordon, G. Beaucarne, O. Tuzun, A. Slaoui, and J. Poortmans. "Heterojunction a-Si/poly-Si solar cells on mullite substrates." Thin Solid Films 516, no. 20 (2008): 6896–901. http://dx.doi.org/10.1016/j.tsf.2007.12.097.

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Fahrner, W. R., R. Goesse, M. Scherff, T. Mueller, M. Ferrara, and H. C. Neitzert. "Admittance Measurements on a-Si/c-Si Heterojunction Solar Cells." Journal of The Electrochemical Society 152, no. 11 (2005): G819. http://dx.doi.org/10.1149/1.2041949.

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27

Yang, Xing, Jiangtao Bian, Zhengxin Liu, Shuai Li, Chao Chen, and Song He. "HIT Solar Cells with N-Type Low-Cost Metallurgical Si." Advances in OptoElectronics 2018 (January 18, 2018): 1–5. http://dx.doi.org/10.1155/2018/7368175.

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A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

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Yun, Myoung Hee, Jae Won Kim, Song Yi Park, Dong Suk Kim, Bright Walker, and Jin Young Kim. "High-efficiency, hybrid Si/C60 heterojunction solar cells." Journal of Materials Chemistry A 4, no. 42 (2016): 16410–17. http://dx.doi.org/10.1039/c6ta02248k.

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Liu, Yiming, Yun Sun, Wei Liu, and Jianghong Yao. "Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)." Phys. Chem. Chem. Phys. 16, no. 29 (2014): 15400–15410. http://dx.doi.org/10.1039/c4cp00668b.

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30

Gao, Peng, Ke Ding, Yan Wang, et al. "Crystalline Si/Graphene Quantum Dots Heterojunction Solar Cells." Journal of Physical Chemistry C 118, no. 10 (2014): 5164–71. http://dx.doi.org/10.1021/jp412591k.

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31

Nakamura, Junichi, Naoki Asano, Takeshi Hieda, Chikao Okamoto, Hiroyuki Katayama, and Kyotaro Nakamura. "Development of Heterojunction Back Contact Si Solar Cells." IEEE Journal of Photovoltaics 4, no. 6 (2014): 1491–95. http://dx.doi.org/10.1109/jphotov.2014.2358377.

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32

Liu, Qiming, Ishwor Khatri, Ryo Ishikawa, Keiji Ueno, and Hajime Shirai. "Efficient crystalline Si/organic hybrid heterojunction solar cells." physica status solidi (c) 9, no. 10-11 (2012): 2101–6. http://dx.doi.org/10.1002/pssc.201200131.

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Bearda, Twan, Kunta Yoshikawa, Elisabeth van Assche, et al. "Optimization of Post-Texturization Cleans for Heterojunction Solar Cells." Solid State Phenomena 187 (April 2012): 341–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.341.

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Solar cells employing heterojunction emitters of amorphous silicon (a-Si) on a monocrystalline silicon (c-Si) substrate have demonstrated high efficiencies without requiring high-temperature processing [. An example of such a cell structure is shown in Figure 1. It has been found that the cell efficiency can be boosted by inserting a thin undoped (intrinsic) a-Si layer between the a-Si emitter and the c-Si substrate. The thin intrinsic layer provides very good passivation of interface defects, thus reducing the surface recombination velocity.

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Fara, Laurentiu, Irinela Chilibon, Ileana Cristina Vasiliu, Dan Craciunescu, Alexandru Diaconu, and Silvian Fara. "On Numerical Modelling and an Experimental Approach to Heterojunction Tandem Solar Cells Based on Si and Cu2O/ZnO—Results and Perspectives." Coatings 14, no. 3 (2024): 244. http://dx.doi.org/10.3390/coatings14030244.

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A comparative analysis of three advanced architectures for tandem solar cells (SCs) is discussed, respectively: metal oxide, thin film, and perovskite. Plasmonic solar cells could further increase solar cell efficiency. Using this development, an innovative PV technology (an SHTSC based on metal oxides) represented by a four-terminal Cu2O/c-Si tandem heterojunction solar cell is investigated. The experimental and numerical modelling study defines the main aim of this paper. The experimental approach to SHTSCs is analysed: (1) a Cu2O layer is deposited using a magnetron sputtering system; (2) t

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Privitera, Stefania, Vincenza Brancato, Donatella Spadaro, Ruggero Anzalone, Alessandra Alberti, and Francesco La Via. "3C-SiC Polycrystalline Films on Si for Photovoltaic Applications." Materials Science Forum 821-823 (June 2015): 189–92. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.189.

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The electrical and optical properties of n-doped polycrystalline 3C-SiC films grown on 6 inches Si wafers have been investigated as a function of precursor gases, deposition temperature and C/Si ratio. The Si/SiC interface has been optimized, eliminating the voids formation through a double temperature step process and by introducing a thin not intentionally doped layer. Films with high surface roughness, favourable for light trapping in photovoltaic applications, and with resistivity around 20 mOhm cm have been obtained for C/Si ratio close to 1. Simple solar cells have been also manufactured

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Wang, Guang Wei, Sheng Li Lu, and Xin Wei Zhao. "Properties of Sputtered-n-nc-Si:Er/p-Si Heterojunction Solar Cells." Applied Mechanics and Materials 734 (February 2015): 791–95. http://dx.doi.org/10.4028/www.scientific.net/amm.734.791.

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Nanocrystalline Si:Er (nc-Si:Er) films were sputtered on p-Si (100) substrates and diffused with phosphorus to form PN heterojunction diodes. The I-V properties of these diodes were characterized. And the properties of diodes without Er were compared with n-nc-Si:Er/p-Si. It was found that n-nc-Si:Er/p-Si diodes had better characteristics. Solar cells based on n-nc-Si:Er/i-nc-Si/p-Si were fabricated and characterized. The photoelectrical conversion efficiency of 18.13% for n-nc-Si:Er/i-nc-Si/p-Si solar cell was achieved.

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Švrček, Vladimir, and Davide Mariotti. "Electronic interactions of silicon nanocrystals and nanocarbon materials: Hybrid solar cells." Pure and Applied Chemistry 84, no. 12 (2012): 2629–39. http://dx.doi.org/10.1351/pac-con-12-01-12.

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Hybrid inorganic/nanocarbon solar cells represent low-cost solutions for the large-scale manufacturing of energy conversion devices. Here we discuss results that relate to the electronic interactions of nanocarbon materials with freestanding and surfactant-free silicon nanocrystals (Si-ncs) with quantum confinement effects, integrated in bulk-heterojunction solar cells. In particular, we demonstrate the feasibility of bulk-heterojunction photovoltaic solar cells that consist of Si-ncs combined with fullerenes or with semiconducting single-walled carbon nanotubes (SWCNTs). We show that the ener

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Huang, Ying, Xiao Ming Shen, and Xiao Feng Wei. "Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS." Applied Mechanics and Materials 665 (October 2014): 111–14. http://dx.doi.org/10.4028/www.scientific.net/amm.665.111.

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In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high effici

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Fujiwara, Michinobu, Kazuma Takahashi, Yoshihiko Nakagawa, et al. "Improved conversion efficiency of p-type BaSi₂/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi₂." AIP Advances 12, no. 4 (2022): 045115. http://dx.doi.org/10.1063/5.0083812.

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The effect of low growth rate deposition (LGD) of BaSi2 on the film quality and performance of silicon heterojunction solar cells was investigated. The total thickness of the BaSi2 layer decreased with increasing LGD duration ( tLGD). Analysis using Raman spectroscopy indicated that an amorphous Si (a-Si) phase existed on the surface of the BaSi2 layer. The a-Si on the surface was converted into BaSi2 by post-annealing owing to the diffusion of Ba and Si atoms. X-ray diffraction analysis revealed that LGD improved the rate of a-axis orientation and crystallinity. Post-annealing was also observ

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Shah, Nadir, and Ahsan Zafar. "Improved Performance of Silicon-Germanium Solar Cell Based on Optimization of Layer Thickness." City University International Journal of Computational Analysis 5, no. 1 (2022): 1–10. http://dx.doi.org/10.33959/cuijca.v5i1.53.

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Electrical energy has become an essential part of our life. Therefore, its supply must be sustainable, economical, and environment-friendly. The conversion of sunlight into electricity is made possible through the solar cell, a semiconductor device, however, the conversion efficiency of these cells is low which can be further improved. This research work presents the design and performance analysis of silicon-germanium (Si-Ge) solar cells. Amorphous silicon / crystalline silicon Heterojunction (a-Si/c-Si HIT) solar, Ge, Si-Ge alloy with 25% Si concentration solar cells are designed in Afors-He

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Ašmontas, Steponas, Maksimas Anbinderis, Jonas Gradauskas, et al. "Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells." Materials 13, no. 12 (2020): 2857. http://dx.doi.org/10.3390/ma13122857.

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Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as

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Jeong, Hanbin, Hansol Kim, Won-Il Song, Kyung-Hoon Yoo, Jason Rama, and Jae Kwan Lee. "Improved efficiency of solution-processed bulk-heterojunction organic solar cells and planar-heterojunction perovskite solar cells with efficient hole-extracting Si nanocrystals." RSC Advances 6, no. 107 (2016): 104962–68. http://dx.doi.org/10.1039/c6ra24205g.

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LI, X., Y. XU, and X. CHE. "a-Si/c-Si heterojunction solar cells on SiSiC ceramic substrates." Rare Metals 25, no. 6 (2006): 186–89. http://dx.doi.org/10.1016/s1001-0521(07)60071-0.

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Hao, L. Z., W. Gao, Y. J. Liu, et al. "High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells." Nanoscale 7, no. 18 (2015): 8304–8. http://dx.doi.org/10.1039/c5nr01275a.

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Mamedov, Huseyn, Mustafa Muradov, Zoltan Konya, et al. "Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions for applications in nanostructured solar cells." Photonics Letters of Poland 10, no. 3 (2018): 73. http://dx.doi.org/10.4302/plp.v10i3.813.

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Solar cells based on c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions were synthesized by depositing CdS films on c-Si/porous-Si (PS) substrates by electrochemical deposition (ED). PS layers with systematically varied pore diameter (8-45 nm) and were fabricated on p-type c-Si wafers using electrochemical etching. The window layers of ZnxCd1-xO with several Zn concentrations(x=0.2; 0.4; 0.5 and 0.6) were also deposited on the CdS buffer layers by ED. The photoelectrical properties of heterojunctions were studied as functions of PS pore size and Zn content in ZnxCd1-xO. The optimal pore size and Zn

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Grace, Tom, Hong Duc Pham, Christopher T. Gibson, Joseph G. Shapter, and Prashant Sonar. "Application of A Novel, Non-Doped, Organic Hole-Transport Layer into Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells." Applied Sciences 9, no. 21 (2019): 4721. http://dx.doi.org/10.3390/app9214721.

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The search for novel solar cell designs as an alternative to standard silicon solar cells is important for the future of renewable energy production. One such alternative design is the carbon nanotube/silicon (CNT/Si) heterojunction solar device. In order to improve the performance of large area CNT/Si heterojunction solar cells, a novel organic material, 4,10-bis(bis(4-methoxyphenyl)amino)naptho[7,8,1,2,3-nopqr]tetraphene-6,12-dione (DPA-ANT-DPA (shortened to DAD)), was added as an interlayer between the CNT film and the silicon surface. The interlayer was examined with SEM and AFM imaging to

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Song, Zhancheng, Yuuka Sumai, Huynh Thi Cam Tu, Md Shahiduzzaman, Tetsuya Taima, and Keisuke Ohdaira. "Use of n-type amorphous silicon films as an electron transport layer in the perovskite solar cells." Japanese Journal of Applied Physics 61, SB (2022): SB1012. http://dx.doi.org/10.35848/1347-4065/ac2c99.

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Abstract We have investigated the use of n-type amorphous silicon (n-a-Si) films as the electron transport layers (ETL) in perovskite (PVK) solar cells, aiming at the application to PVK/Si tandem solar cells. The use of n-a-Si as the ETL in MAPbI3 PVK solar cells was attempted, and the power conversion efficiency (PCE) of fluorine-doped tin oxide- (FTO-) based solar cells was improved due to an improvement in coverage on FTO with thicker n-a-Si, but the external quantum efficiency in the short wavelength region was decreased due to parasitic absorption of n-a-Si. The use of indium tin oxide wi

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48

Song, Zhancheng, Yuuka Sumai, Huynh Thi Cam Tu, Md Shahiduzzaman, Tetsuya Taima, and Keisuke Ohdaira. "Use of n-type amorphous silicon films as an electron transport layer in the perovskite solar cells." Japanese Journal of Applied Physics 61, SB (2022): SB1012. http://dx.doi.org/10.35848/1347-4065/ac2c99.

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Abstract We have investigated the use of n-type amorphous silicon (n-a-Si) films as the electron transport layers (ETL) in perovskite (PVK) solar cells, aiming at the application to PVK/Si tandem solar cells. The use of n-a-Si as the ETL in MAPbI3 PVK solar cells was attempted, and the power conversion efficiency (PCE) of fluorine-doped tin oxide- (FTO-) based solar cells was improved due to an improvement in coverage on FTO with thicker n-a-Si, but the external quantum efficiency in the short wavelength region was decreased due to parasitic absorption of n-a-Si. The use of indium tin oxide wi

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Muralidharan, Pradyumna, Stephen M. Goodnick, and Dragica Vasileska. "Multiscale modeling of transport in silicon heterojunction solar cells." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, DPC (2017): 1–15. http://dx.doi.org/10.4071/2017dpc-tha3_presentation1.

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Silicon based single junction solar cell technology continued to make significant strides in the past year with new world record module efficiencies being reported for the Panasonic heterojunction with thin intrinsic layer (HIT) module (23.8%) and the SunPower rooftop silicon module (24.1%). The HIT cell which is comprised of amorphous silicon (a-Si) and crystalline silicon (c-Si) currently holds the world record efficiency (25.6%) for a silicon based single junction solar cell. Further improvement in this technology requires a rigorous understanding of the underlying physics of the device. Th

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Deng, Quanrong, Yiqi Li, Yonglong Shen, Lian Chen, Geming Wang, and Shenggao Wang. "Numerical simulation on n-MoS2/p-Si heterojunction solar cells." Modern Physics Letters B 31, no. 07 (2017): 1750079. http://dx.doi.org/10.1142/s0217984917500798.

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n-MoS2/p-Si heterojunction solar cells were simulated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) software. In order to fundamentally understand the mechanism of such kind of cells, the effects of electron affinity, band gap and thickness for MoS2, as well as the donor concentration in Si layer on the devices performance were simulated and discussed in detail. The effects of defect states in Si layer and at n-MoS2/p-Si interface on the performance of devices were also simulated. It is demonstrated that two-dimensional monolayer MoS2 with the highest band gap of 1.8 e

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