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Relevant bibliographies by topics / Si Quantum Dot

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Journal articles

Academic literature on the topic 'Si Quantum Dot'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Si Quantum Dot"

1

Porod, Wolfgang. "Quantum-Dot Devices and Quantum-Dot Cellular Automata." International Journal of Bifurcation and Chaos 07, no. 10 (1997): 2199–218. http://dx.doi.org/10.1142/s0218127497001606.

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We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. Boolean logic functions may be implemented in specific arrays of cells representing binary information, the so-called Quantum-Dot Cellular Automata (QCA). Cells may also be viewed as carrying analog information and we outline a network-theoretic description of such Quantum-Dot Nonlinear Networks (Q-CNN). In addition, we discuss possible realizations of these structures in a variety of semiconductor systems (including GaAs/AlGaAs, Si/SiGe, and Si/SiO 2), rings of metallic tunnel junctions, an

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2

Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Uspekhi Fizicheskih Nauk 171, no. 12 (2001): 1371. http://dx.doi.org/10.3367/ufnr.0171.200112h.1371.

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3

Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Physics-Uspekhi 44, no. 12 (2001): 1304–7. http://dx.doi.org/10.1070/pu2001v044n12abeh001057.

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4

Lambert, K., I. Moreels, D. Van Thourhout, and Z. Hens. "Quantum Dot Micropatterning on Si." Langmuir 24, no. 11 (2008): 5961–66. http://dx.doi.org/10.1021/la703664r.

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5

Dvurechenskii, Anatoly, Andrew Yakimov, Victor Kirienko, et al. "Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures." Defect and Diffusion Forum 386 (September 2018): 68–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.68.

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New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

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6

Gudlavalleti, R. H., B. Saman, R. Mays, et al. "Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations." International Journal of High Speed Electronics and Systems 28, no. 03n04 (2019): 1940026. http://dx.doi.org/10.1142/s0129156419400263.

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Quantum dot gate (QDG) field-effect transistors (FETs) fabricated using Si and Ge quantum dot layers, self-assembled in the gate region over the tunnel oxide, have exhibited 3- and 4-state behavior applicable for ternary and quaternary logic, respectively. This paper presents simulation of QDG-FETs comprising mixed Ge and Si quantum dot layers over tunnel oxide using an analog behavior model (ABM) and Verilog model. The simulations reproduce the experimental I-V characteristics of a fabricated mixed dot QDG-FET. GeOx-cladded Ge quantum dot layer is in interface to the tunnel oxide and is depos

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7

Kondo, Jun, Pial Mirdha, Barath Parthasarathy, et al. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.

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Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots prov

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8

Parthasarathy, Barath, Pial Mirdha, Jun Kondo, and Faquir Jain. "Dual Quantum Dot Superlattice." International Journal of High Speed Electronics and Systems 27, no. 01n02 (2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.

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In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transis

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9

Chen, Minhan, and Wolfgang Porod. "Simulation of Quantum-Dot Structures in Si/SiO2." VLSI Design 6, no. 1-4 (1998): 335–39. http://dx.doi.org/10.1155/1998/89258.

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We present numerical simulations for the design of gated few-electron quantum dot structures in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces. In our simulations, the confining potential is obtained from the Poisson equation with a Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in the few-electron regime.

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10

He, Peng, Chong Wang, Jie Yang, and Yu Yang. "Advance of Ge/Si Quantum Dot Infrared Photodetector." Advanced Materials Research 873 (December 2013): 799–808. http://dx.doi.org/10.4028/www.scientific.net/amr.873.799.

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The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.

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