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Journal articles on the topic 'SiC'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Verma, Ajay, J. Singh, V. Kumar, A. S. Kharab, and G. P. Singh. "Non parametric measures to estimate GxE interaction of dual purpose barley genotypes for grain yield under multi-location trials." Journal of Applied and Natural Science 9, no. 4 (2017): 2332–37. http://dx.doi.org/10.31018/jans.v9i4.1532.

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GxE interaction of seventeen dual purpose barley genotypes evaluated at ten major barley locations of the country by non parametric methods. Non parametric measures had been well established and expressed ad-vantages over their counter parts i.e. parametric measures. Simple descriptive measures based on the ranks of gen-otypes i.e. Mean of ranks (MR) pointed towards RD2925 and BH1008 and standard deviation of ranks (SD) for KB1401 and UPB1054 whereas Coefficient of variation (CV) for JB322 and RD2925 as stable genotypes. Nonpara-metric measures based on original values (Si1, Si2, Si3, Si4, Si5

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Verma, Ajay, RPS Verma RPS Verma, J. Singh J Singh, Lokendra Kumar, and Gyanendra Pratap Singh. "Genotype X Environment Interactions of Fodder Barley Genotypes as Estimated by Ammi, Blup and Non Parametric Measures." Current Agriculture Research Journal 10, no. 2 (2022): 46–54. http://dx.doi.org/10.12944/carj.10.2.02.

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Field experiments were carried out at six locations in Northern Hill Zone to evaluate twenty three promising fodder barley genotypes in a randomized complete block design (RCBD) during 2020-21 cropping seasons . Using analytic methods Additive Main Effects and Multiplicative Interactions (AMMI), Best Linear Unbiased Predictor (BLUP) along with Non Parametric compared to decipher the GxE interactions under multi environment trials. Highly significant about 67.5% variations accounted by environments, 14.1% of GxE interactions and marginally 3.2% by the genotypes in the total sum square of variat

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Ma, Yutong, Mengqi Miao, Ming Chen, and Shan Qin. "Clarification of Distinguishing Natural Super-Reduced Phase from Synthetics Based on Inclusions." Minerals 14, no. 7 (2024): 722. http://dx.doi.org/10.3390/min14070722.

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Super-reduced phases (SRPs), such as silicon carbide (SiC) and metal silicides, have increasingly been reported in various geological environments. However, their origin remains controversial. SRP inclusions (e.g., metal silicides and metallic silicon (Si0)) within SiC are commonly believed to indicate a natural origin. Here, we identified an unusual SRP assemblage (SiC, (Fe,Ni)Si2, and Si0) in situ in an H5-type Jingshan ordinary chondrite. Simultaneously, our analysis showed that the SiC abrasives contain (Fe,Ni)Si2 and Si0 inclusions. Other inclusions in the artificial SiC were similar to t

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AJAY, VERMA, and PRATAP SINGH GYANENDRA. "Random and Fixed Effects of Wheat Genotypes Compared by Rank Based Measures: Northern Hills Zone." INTERNATIONAL JOURNAL OF AGRICULTURE AND BIOLOGICAL SCIENCES 4, Sep & Oct 2020 (2020): 99–118. https://doi.org/10.5281/zenodo.4286944.

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<em>Rank based measures of stability based on random effects of wheat genotypes for the first year of study, Sis measures identified G11, G12, G1, G22 would be stable yield. Corrected yield measures CSis selected G12, G17, G19,G21, G22genotypes as possessing for stable yield. NPi(s) identified G4, G12, G19, G22 as desirable genotypes for this zone. Kendall ’ s coefficient of concordanceexpressed dependence among measures for ranking of wheat genotypes. Association analysis observed positive correlations of Sis, CSis & NPi(s) with other measures

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Verma, Ajay, and Gyanendra Pratap Singh. "Emulations of AMMI, BLUP and non-parametric measures to decipher GXE interaction of wheat genotypes evaluated in CZ." INTERNATIONAL JOURNAL OF AGRICULTURAL SCIENCES 18, no. 2 (2022): 666–74. http://dx.doi.org/10.15740/has/ijas/18.2/666-674.

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AMMI analysis observed highly significant variations due to environments, GxE interactions, and genotypes with,respective 63.2% 18.3% 5.5% towards the total sum square of variations. Absolute IPCA-1 scores pointed for G 2, G4, G7 as per IPCA-2, genotypes G8, G2 G7 would be of choice. ASV and ASV1 measures utilized 54.5% of interaction sum of squares recommended (G2, G7, G3). 96.9% of interaction effects utilized by MASV and MASV1 settled for G7, G2, G13 genotypes. BLUP-based HMGV RPGV HMRPGV measures pointed for G3, G13, G8 genotypes. Non parametric measures NPi(1) observed suitability of G13,

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6

Verma*, Ajay, Bhudev Singh Tyagi, and Gyanendra Singh. "Experimental and Biological Approaches for Genotype X Environment Interactions Estimation for Wheat Genotypes Evaluated Under Multi Locational Trials." Current Agriculture Research Journal 12, no. 1 (2024): 242–52. http://dx.doi.org/10.12944/carj.12.1.20.

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Genotypes VL907, HS562, HPW484 were ranked as topped three in comparison to the other during the evaluation of nine wheat genotypes at major locations of the north hills zone of the country under rain fed conditions. The least values of AMMI stability measure (ASV) had expressed the desirability of HPW484, HS562, VL2041 genotypes whereas the genotypes HS562, HPW484, VL2041 had been identified by least values of Modified Ammi Stability Value (MASV). The minimum value of simultaneous selection index measure based on the MASV (ssiMASV) had selected HS562, HPW484, VL2041 wheat genotypes while valu

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Meena, R. P., Ajay Verma, and S. C. Tripathi. "Wheat Yield and Important Traits Influenced by Interaction of Potassium and Irrigation Levels Evaluated at Number of Locations in the Country by AMMI Analysis and Non-Parametric Measures." Environment and Ecology 41, no. 3D (2023): 2089–98. http://dx.doi.org/10.60151/envec/pwpy1898.

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AMMI analysis of treatments consisted of levels of potassium with irrigations observed highly significant effects of locations, treatments, and T×L interactions for wheat yield. About 53.4% of the total variations in yield values was due to locations followed by 26.3% and 10.8% by treatments and interactions effects. Further analysis found 59.7% contributed by AMMI1 while 17.2% and 9.4% by AMMI2 and AMMI3 components for thousands grain weight as total of first two components cumulative to 76.9% of the total variation. The sums of squares for G×E signal and noise were 56.7% and 43.3% of interac

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8

Naghma, Rahla, and Bobby Antony. "Electron impact ionization cross-section of C2, C3, Si2, Si3, SiC, SiC2and Si2C." Molecular Physics 111, no. 2 (2012): 269–75. http://dx.doi.org/10.1080/00268976.2012.718807.

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9

Verma, Ajay, B. S. Tyagi, and Gyanendra Singh. "Analysis of the Phenotypic Adaptability and Stability of Wheat Genotypes through the Biplot Approach." International Journal of Bio-resource and Stress Management 15, Mar, 3 (2024): 01–09. http://dx.doi.org/10.23910/1.2024.5042.

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The present study was conducted during the cropping season during October to April in the year 2022–23. Highly significant effects of environments, genotypes×environments interactions and genotypes had been observed as per the AMMI analysis of twelve wheat genotypes evaluated under advanced varietal trials at eleven major locations and Environments effects had augmented about 49% of the total sum of squares. ASV measure had utilized the 51.7% of the interaction effects had pointed for DBW296, HI1654, PBW899 while MASV measure had exploited nearly 98% of total interaction effects had selected t

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10

Umeda, T., Nguyen Tien Son, Junichi Isoya, et al. "Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC." Materials Science Forum 527-529 (October 2006): 543–46. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.543.

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We present new electron-paramagnetic-resonance (EPR) data on the HEI4/SI5 center in 4H-SiC. So far, the SI5 (SI-5) center has been observed only in as-grown SiC substrates; however, we found that it can be created by electron irradiation to commercial n-type 4H-SiC. The artificially created SI5 center, which we had preliminary called HEI4, was found to be identical with the SI5 center in as-grown SiC. A high-intensity HEI4/SI5 spectrum of irradiated SiC revealed clear hyperfine structures of 29Si and 13C, which enabled us to identify the origin of this center as a carbon antisite-vacancy pair

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11

Wu, Suhui, Lijian Shi, Bin Zou, Tao Zeng, Zhaoqing Dong, and Dunwang Lu. "Daily Sea Ice Concentration Product over Polar Regions Based on Brightness Temperature Data from the HY-2B SMR Sensor." Remote Sensing 15, no. 6 (2023): 1692. http://dx.doi.org/10.3390/rs15061692.

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Polar sea ice profoundly affects atmospheric and oceanic circulation and plays a significant role in climate change. Sea ice concentration (SIC) is a key geophysical parameter used to quantify these changes. In this study, we determined SIC products for the Arctic and Antarctic from 2019 to 2021 using data from the Chinese marine satellite Haiyang 2B (HY-2B) with an improved bootstrap algorithm. Then the results were compared with similar operational SIC products and ship-based data. Our findings demonstrate the effectiveness of the improved algorithm for accurately determining SIC in polar re

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12

Yu, Hyun-Woo, Kati Raju, Ji Yeon Park, and Dang-Hyok Yoon. "Effects of Al2O3-RE2O3Additive for the Sintering of SiC and the Fabrication of SiCf/SiC Composites." Journal of the Korean Ceramic Society 50, no. 6 (2013): 364–71. http://dx.doi.org/10.4191/kcers.2013.50.6.364.

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13

Yamaguchi, Hiroki, Yukinori Sakiyama, Emi Makino, Shoichi Onda, and Yoichiro Matsumoto. "Ab Initio Studies of the Surface Reaction of Si₂C and SiC₂ with Si on the 4H-SiC (000-1) Surface." Materials Science Forum 527-529 (October 2006): 235–38. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.235.

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The origin of the polytypes of SiC has been investigated from the viewpoint of surface reactions by the density functional theory (DFT) within the Projector Augmented Wave-Generalized Gradient Approximation. Three radicals were considered here as the major species in the crystal growth process: Si, Si2C and SiC2. We supposed that these radicals contribute to the crystal growth directly through the adsorption on the 4H-SiC (000-1) C-face surface. The DFT calculations showed that the Si2C, which relatively has a similar structure with the SiC crystal, had no activation barrier to be adsorbed che

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14

Pandya, C. V. "Total ionization cross-sections for Si2, SiC, SiC2and Si2C molecules." Journal of Physics: Conference Series 488, no. 5 (2014): 052001. http://dx.doi.org/10.1088/1742-6596/488/5/052001.

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15

Liu, R. J., L. M. Porter, M. J. Kim, R. W. Carpenter, and R. F. Davis. "Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic." Microscopy and Microanalysis 3, S2 (1997): 641–42. http://dx.doi.org/10.1017/s1431927600038484.

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6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and opto-electronic devices have been produced in 6H-SiC films. The future development of SiC device technology depends on the ability to form good ohmic and Schottky contacts. Plots of the current-voltage (I-V) characteristics of Cr-B contacts on (0001) 6H-SiC revealed that they became the most ohmic-like after annealing at 1000 °C for 240 sec. and rectifying after annealing for 300 sec, therefore TEM analysis of the microstructures of as-deposited and annealed Cr-B films should help in und

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16

Liu, R. J., L. M. Porter, M. J. Kim, R. W. Carpenter, and R. F. Davis. "Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic." Microscopy and Microanalysis 3, S2 (1997): 641–42. http://dx.doi.org/10.1017/s1431927600010096.

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6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and opto-electronic devices have been produced in 6H-SiC films. The future development of SiC device technology depends on the ability to form good ohmic and Schottky contacts. Plots of the current-voltage (I-V) characteristics of Cr-B contacts on (0001) 6H-SiC revealed that they became the most ohmic-like after annealing at 1000 °C for 240 sec. and rectifying after annealing for 300 sec, therefore TEM analysis of the microstructures of as-deposited and annealed Cr-B films should help in und

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17

Massalkhi, Sarah, M. Agúndez, J. Cernicharo, J. P. Fonfría, and M. Santander-García. "The Abundance of SiC2 in Carbon Star Envelopes." Proceedings of the International Astronomical Union 13, S332 (2017): 261–69. http://dx.doi.org/10.1017/s1743921317007566.

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AbstractSilicon carbide dust grains are ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. To date, only three molecules containing an Si–C bond have been identified to have significant abundances in C-rich AGB stars: SiC2, SiC, and Si2C. The ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-ric

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18

Liang, Shuang, Jiangyuan Zeng, Zhen Li, Dejing Qiao, Ping Zhang, and Haiyun Bi. "Consistent Comparison of Remotely Sensed Sea Ice Concentration Products with ERA-Interim Reanalysis Data in Polar Regions." Remote Sensing 12, no. 18 (2020): 2880. http://dx.doi.org/10.3390/rs12182880.

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Sea ice concentration (SIC) plays a significant role in climate change research and ship’s navigation in polar regions. Satellite-based SIC products have become increasingly abundant in recent years; however, the uncertainty of these products still exists and needs to be further investigated. To comprehensively evaluate the consistency of the SIC derived from different SIC algorithms in long time series and the whole polar regions, we compared four passive microwave (PM) satellite SIC products with the ERA-Interim sea ice fraction dataset during the period of 2015–2018. The PM SIC products inc

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Massalkhi, S., M. Agúndez, J. Cernicharo, et al. "Abundance of SiC2 in carbon star envelopes." Astronomy & Astrophysics 611 (March 2018): A29. http://dx.doi.org/10.1051/0004-6361/201732038.

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Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216.Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes ar

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Hijikata, Yasuto, Hiroyuki Yaguchi, Sadafumi Yoshida, et al. "Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation." Materials Science Forum 483-485 (May 2005): 585–88. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.585.

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Thermal oxide films on SiC epitaxial (000-1) C-faces have been characterized by angle-resolved photoemission spectroscopy (AR-PES). The structure of wet oxide/SiC C-face interface was compared with that of dry oxide/SiC C-face, as well as that of dry oxide/SiC Si-face, in order to clarify why a MOS device of SiC C-face achieved good electrical properties. The improvement in electrical properties was confirmed by AR-PES measurements, evidencing differences in binding energy between SiC and the Si4+ components in Si2p and valence band region, and in binding energy between SiC and the CHx compone

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Yamakawa, Kazuma, Jumpei Yoshimura, Takashi Ito, Mineji Hayakawa, Toshimitsu Hamasaki, and Satoshi Fujimi. "External Validation of the Two Newly Proposed Criteria for Assessing Coagulopathy in Sepsis." Thrombosis and Haemostasis 119, no. 02 (2018): 203–12. http://dx.doi.org/10.1055/s-0038-1676610.

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Background Two different criteria for evaluating coagulopathy in sepsis were recently released: sepsis-induced coagulopathy (SIC) and sepsis-associated coagulopathy (SAC). Although both use universal haemostatic markers of platelet count and pro-thrombin time, significance and usefulness of these criteria remain unclear. Objective This article validates and evaluates the significance of SIC and SAC criteria compared with the International Society on Thrombosis and Haemostasis (ISTH) overt disseminated intravascular coagulation (DIC) and Japanese Association for Acute Medicine (JAAM) DIC criter

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22

Song, Jong Seob, Seyoung Kim, Kyeong Ho Baik, Sangkuk Woo, and Soo-hyun Kim. "Liquid Silicon Infiltrated SiCf/SiC Composites with Various Types of SiC Fiber." Composites Research 30, no. 2 (2017): 77–83. http://dx.doi.org/10.7234/composres.2017.30.2.077.

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23

Xu, Jian Guang, Hou An Zhang, Guo Jian Jiang, and Wen Lan Li. "Synthesis of SiC_W/(Mo,W)Si₂ Composite by the "Chemical Oven" Self-Propagating Combustion Method." Key Engineering Materials 368-372 (February 2008): 951–54. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.951.

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SiC whisker reinforced (Mo,W)Si2 composite powder has been successfully synthesized by a novel process, named as chemical oven self-propagating high temperature synthesis (COSHS). The mixtures of Si and Ti powders were ignited as chemical oven. XRD result shows that the combustion product is mainly composed of (Mo,W)Si2 solid solution and SiC phases. SEM photo and EDS result show that SiC whisker is formed during this process. The as-prepared SiCW/(Mo,W)Si2 composite powder has been pressureless sintered. The microstructure and mechanical properties of the composite were investigated. Relative

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Piluso, Nicolo’, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Silvia Scalese, and Francesco La Via. "Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si_1-xGe_x/Si(001) Heterostructures." Materials Science Forum 806 (October 2014): 21–25. http://dx.doi.org/10.4028/www.scientific.net/msf.806.21.

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Micro Raman characterization has been used to determine the stress status of 3C-SiC epilayer grown on pseudomorphic-Si thin layer on Si1-xGex/Si(001). The strain conditions of the Si1-xGexfilms grown on Si(001) have been determined by the analysis of additional Silicon Raman peaks, which Raman shifts are related to the lattice parameter. Through the analysis of the Raman spectra, the correlation between the Si1-xGexfilm, the crystal quality and the stress relaxation of the 3C-SiC as a function of the Germanium fraction (x), have been evaluated. The increase of Germanium fraction determines the

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Park, Ji Yeon, Daejong Kim, and Weon-Ju Kim. "Fabrication of SiCf/SiC Composite by Chemical Vapor Infiltration." Composites Research 30, no. 2 (2017): 108–15. http://dx.doi.org/10.7234/composres.2017.30.2.108.

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Weih, Petia, Henry Romanus, Thomas Stauden, Lothar Spieß, Oliver Ambacher, and Jörg Pezoldt. "Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy." Materials Science Forum 483-485 (May 2005): 173–76. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.173.

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In the present work cubic 3C-(Si1-xC1-y)Gex+y solid solutions were grown at different^temperatures by molecular beam epitaxy on on-axis 4H-SiC (0001) substrates. Two different growth methods are compared in order to explore the optimal growth conditions for the incorporation of Ge into the SiC lattice during the low temperature epitaxy. For this reason simultaneous growth and migration enhanced epitaxy were used. The chemical composition of the grown layers were analyzed by energy dispersive x-ray methods during transmission electron microscopy investigations. It was found that the migration e

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Takaba, Hiromitsu, Ai Sagawa, Miki Sato, et al. "Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC." Materials Science Forum 600-603 (September 2008): 131–34. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.131.

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The mechanism of layer growth as well as defect formation in the SiC crystal is fundamentally important to derive its appropriate performance. The purpose of the present study is to investigate competitive adsorption properties of growth species on the various 4H-SiC polytype surfaces. Adsorption structure and binding energy of growth species in the experimentally condition on various SiC surfaces were investigated by density functional theory. For the SiC(000-1) and SiC(0001) surfaces, the adsorption energy by DFT follows the orders C > H > Si > SiC2 > Si2C > C2H2. Furthermore,

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Salman, Abdulhakeem Amer. "Wear Behavior of 2024 Aluminum Alloy Reinforced with SiC Particles." Engineering, Technology & Applied Science Research 14, no. 6 (2024): 17883–87. https://doi.org/10.48084/etasr.8650.

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The wear behavior of Aluminum Alloy (AA) 2024 reinforced with SiC particles were investigated at room conditions. Stir casting method was used to prepare the matrix composite of AA 2024 alloy reinforced with different weight percentages of SiC (3, 6, 9, 12 wt%). The wear behavior of both AA 2024 and AA 2024/SiC composite was studied using the reciprocating wear test. Loads of 2.5, 5, 7.5, 10, and 12.5 N were applied with sliding speeds of .0.55, 0.72, 0.88, 1.04 and 1.2 m/sec in dry sliding contact conditions. The microstructure and phase distribution were investigated using Optical Microscope

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Arayawut, Onsuda, Teerakiat Kerdcharoen, and Chatchawal Wongchoosuk. "Structures, Electronic Properties, and Gas Permeability of 3D Pillared Silicon Carbide Nanostructures." Nanomaterials 12, no. 11 (2022): 1869. http://dx.doi.org/10.3390/nano12111869.

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Silicon carbide (SiC) is recognized as excellent material for high power/temperature applications with a wide-band gap semiconductor. With different structures at the nanosize scale, SiC nanomaterials offer outstanding mechanical, physical, and chemical properties leading to a variety of applications. In this work, new 3D pillared SiC nanostructures have been designed and investigated based on self-consistent charge density functional tight-binding (SCC-DFTB) including Van der Waals dispersion corrections. The structural and electronic properties of 3D pillared SiC nanostructures with effects

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Ahmmad, B., Y. Kitamura, Y. Kusumoto, H. Yang, and M. Abdulla-Al-Mamun. "A New Type of Solid State Solar Cell Based on Fe₂O₃, SiC and Crystal Growth Inhibitors." Journal of Scientific Research 2, no. 1 (2009): 1–8. http://dx.doi.org/10.3329/jsr.v2i1.2660.

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A new type of solid state solar cell is produced by using Fe2O3 (working electrode) and SiC as a hole collector (counter electrode). Two molten salts, 1-ethyl-3-methylimidazolium chloride (EMICl) and 1-butyl-3-methylimidazolium iodide (BMII) were used as crystal growth inhibitors with a SiC film. It was found that BMII shows about 10 times higher efficiency compared to an EMICI-based SiC film solar cell. Keywords: Fe2O3; SiC; Solid state solar cell; Molten salt. © 2009 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.DOI: 10.3329/jsr.v2i1.2660 J. Sci. Res. 2 (

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Kim, Kang San, and Gwiy Sang Chung. "Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations." Materials Science Forum 645-648 (April 2010): 391–94. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.391.

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This paper describes the characteristics of porous 3C-SiC with in-situ N-doping concentrations. Polycrystalline (poly) 3C-SiC thin films were deposited on p-type Si (100) substrates by APCVD using hexamethyildisilane (HMDS: Si2(CH3)6). The porous 3C-SiC (pSiC) was achieved by anodized with 380 nm UV-LED. The characteristics of the N2 doped pSiC were evaluated using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and photo luminescence (PL). Average pore diameter is about 50 nm and etched area was increased with N2 doping rate. These r

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Schmoeckel, Julian, Ruth M. Santamaría, Roger Basner, Elisabeth Schüler, and Christian H. Splieth. "Introducing a Specific Term to Present Caries Experience in Populations with Low Caries Prevalence: Specific Affected Caries Index (SaC)." Caries Research 53, no. 5 (2019): 527–31. http://dx.doi.org/10.1159/000496932.

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Up to now, indices like the mean dmft/DMFT and the SiC (Significant Caries Index) have been used to depict caries experience in populations with high prevalence. With the caries decline, particularly for populations with low caries levels, these indices reach their statistical limits. This paper aims to introduce a specific term, the Specific affected Caries Index (SaC) for the risk groups in populations with low caries prevalence and to illustrate its use based on the consecutive German National Oral Health Survey (GNOHS) in children. In groups with a caries prevalence less than one-third of

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Nie, Yafei, Chengkun Li, Martin Vancoppenolle, et al. "Sensitivity of NEMO4.0-SI³ model parameters on sea ice budgets in the Southern Ocean." Geoscientific Model Development 16, no. 4 (2023): 1395–425. http://dx.doi.org/10.5194/gmd-16-1395-2023.

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Abstract. The seasonally dependent Antarctic sea ice concentration (SIC) budget is well observed and synthesizes many important air–sea–ice interaction processes. However, it is rarely well simulated in Earth system models, and means to tune the former are not well understood. In this study, we investigate the sensitivity of 18 key NEMO4.0-SI3 (Nucleus for European Modelling of the Ocean coupled with the Sea Ice Modelling Integrated Initiative) model parameters on modelled SIC and sea ice volume (SIV) budgets in the Southern Ocean based on a total of 449 model runs and two global sensitivity a

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Wernecke, Andreas, Dirk Notz, Stefan Kern, and Thomas Lavergne. "Estimating the uncertainty of sea-ice area and sea-ice extent from satellite retrievals." Cryosphere 18, no. 5 (2024): 2473–86. http://dx.doi.org/10.5194/tc-18-2473-2024.

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Abstract. The net Arctic sea-ice area (SIA) can be estimated from the sea-ice concentration (SIC) by passive microwave measurements from satellites. To be a truly useful metric, for example of the sensitivity of the Arctic sea-ice cover to global warming, we need, however, reliable estimates of its uncertainty. Here we retrieve this uncertainty by taking into account the spatial and temporal error correlations of the underlying local sea-ice concentration products. As 1 example year, we find that in 2015 the average observational uncertainties of the SIA are 306 000 km2 for daily estimates, 27

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Tanaka, Shun Ichiro, and Chihiro Iwamoto. "Reactive Wetting Dynamics on 6H-SiC Surface with Oxide Layer." Advanced Materials Research 11-12 (February 2006): 571–74. http://dx.doi.org/10.4028/www.scientific.net/amr.11-12.571.

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Nanoscale singularity at the reactive wetting front on the 6H-SiC (0006) surface with amorphous oxide layer was studied using video recorded in situ to clarify the dynamic atomistic behaviors of the brazing and the molten tip spreading on a high-temperature stage of a high-resolution transmission electron microscope. A 0.5-nm-thick precursor film spreading ahead of the main molten alloy on SiC (0006) at 1073 K and continuous spreading of the molten alloy were clearly observed on the SiC (0006) surface with a less than 1-nm-thick amorphous layer. Molten Ti and TiC nanolayers preceded the Ti5Si3

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Colston, Gerard, Maksym Myronov, Stephen Rhead, et al. "Si_1-xC_x/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current." Materials Science Forum 821-823 (June 2015): 571–74. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.571.

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Vertical Schottky diodes have been fabricated on low C content Si1-xCxand 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This issue is far less pronounced in Si1-xCxbased Schottky diodes which demonstrate a clear critical breakdown. Leakage current is shown to be greater in relaxed Si1-xCxlayers. While crystalline Si1-xCxis not currently a viable material for high power electronics it is useful for assessing the impact lattice mismatch and crystalline quality has on the beh

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Bauschlicher, Charles W., and Stephen R. Langhoff. "Abinitiocalculations on C2, Si2, and SiC." Journal of Chemical Physics 87, no. 5 (1987): 2919–24. http://dx.doi.org/10.1063/1.453080.

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HEBALI, Mourad. "Effect of Electronic Properties of Si1-xGex and SiC Semiconductors on the Electrical Behavior of MOS Transistors." Physics of Semiconductor Devices & Renewable Energies Journal 1, no. 1 (2024): 13. http://dx.doi.org/10.59684/psdrej.v1i1.6.

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In this paper, the electrical performance of Metal-Oxide-Semiconductor MOS transistors in Si1-xGex and SiC technologies have been studied by BSIM3v3 model. In which the output charac- teristic ID=f(VDS), transfer characteristic ID=f(VGS) and ION-IOFF currents of the MOS(Si1-xGex) transis- tors have been investigated and the results so obtained are compared with the MOS(SiC) transistors, using 130 nm technology and OrCAD PSpice software. This study allowed to know the extent to which the electrical behavior of transistors is affected by the most important electronic properties of semiconductors

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Kryukov, Yakov V., Dmitry A. Pokamestov, Andrey A. Brovkin, and Evgeny V. Rogozhnikov. "Performance comparison of decoders of non-orthogonal multiple access signals considering modulation and coding schemes from LTE networks." Radioelectronics. Nanosystems. Information Technologies. 14, no. 4 (2022): 463–72. http://dx.doi.org/10.17725/rensit.2022.14.463.

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A comparative analysis of the performance of SL-SIC (Symbol Level - Serial Interference Cancellation) and CWL-SIC (Codeword Level-SIC) decoders of PD-NOMA (Power Doman - Non-Orthogonal Multiple Access) baseband signals in a system with two users is presented. Real signal code constructs (SCC) from the 3GPP LTE (Long Term Evolution of 3rd Generation Partnership Project) communication standard are used. The performance of CWL-SIC achievable in practice in real systems for all possible designs of a group PD-NOMA signal consisting of different pair combinations of noise-immune SCCs has been obtain

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Yoon, Han-Ki, Young-Ju Lee, and Yi-Hyun Park. "Application and Technology on Development of High Temperature Structure SiCf/SiC Composite Materials." Transactions of the Korean Society of Mechanical Engineers A 32, no. 11 (2008): 1016–21. http://dx.doi.org/10.3795/ksme-a.2008.32.11.1016.

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Yang, X. Y., G. Y. Shi, X. M. Meng, H. L. Huang, and Y. K. Wu. "Identification of a new trace 114R SiC by HREM." Acta Crystallographica Section B Structural Science 55, no. 2 (1999): 255–57. http://dx.doi.org/10.1107/s0108768198011987.

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Using electron diffraction patterns and high-resolution electron microscopy (HREM), a trace 114R SiC in commercial α-SiC powder (mainly 6H SiC according to X-ray diffraction) has been discovered. In a hexagonal unit cell its stacking sequence is [(33)4(34)2]3, the periodicity along the c axis is 286.14 Å and a = b = 3.073 Å. 114R belongs to the structure series of (33) n34(33) m34 predicted theoretically by Pandey & Krishna [Mater. Sci. Eng. (1975), 20, 243–249] on the basis of the faulted matrix model.

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Lykken, David T. ""… In a Tumor in the Brain" [Sic! Sic! Sic!]." Contemporary Psychology: A Journal of Reviews 30, no. 11 (1985): 880–81. http://dx.doi.org/10.1037/023327.

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Kohyama, Akira, Joon-Soo Park, and Hun-Chea Jung. "Advanced SiC fibers and SiC/SiC composites toward industrialization." Journal of Nuclear Materials 417, no. 1-3 (2011): 340–43. http://dx.doi.org/10.1016/j.jnucmat.2010.12.086.

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Sakurai, Akira, Charuni A. Gunaratne, and Paul S. Katz. "Two interconnected kernels of reciprocally inhibitory interneurons underlie alternating left-right swim motor pattern generation in the mollusk Melibe leonina." Journal of Neurophysiology 112, no. 6 (2014): 1317–28. http://dx.doi.org/10.1152/jn.00261.2014.

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The central pattern generator (CPG) underlying the rhythmic swimming behavior of the nudibranch Melibe leonina (Mollusca, Gastropoda, Heterobranchia) has been described as a simple half-center oscillator consisting of two reciprocally inhibitory pairs of interneurons called swim interneuron 1 (Si1) and swim interneuron 2 (Si2). In this study, we identified two additional pairs of interneurons that are part of the swim CPG: swim interneuron 3 (Si3) and swim interneuron 4 (Si4). The somata of Si3 and Si4 were both located in the pedal ganglion, near that of Si2, and both had axons that projected

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Tanaka, Shun Ichiro, and Chihiro Iwamoto. "Nanoscale Dynamics at Reactive Wetting Front on SiC." Materials Science Forum 502 (December 2005): 269–74. http://dx.doi.org/10.4028/www.scientific.net/msf.502.269.

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Nanoscale singularity at the reactive wetting front on SiC (0006) was studied using video recorded in situ to clarify the dynamic atomistic behaviours of the brazing and the molten tip spreading on a high-temperature stage of a high-resolution transmission electron microscope. An atomistic process controls the wetting at the front of the spreading film where the classical macroscopic phenomenon never holds true and the singularities are observed in a precursor film. A 0.5-nm-thick precursor film spreading ahead of the main molten alloy on SiC (0006) at 1073 K and continuous spreading of the mo

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Pezoldt, Jörg, Charbel Zgheib, Thomas Stauden, et al. "Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates." Materials Science Forum 963 (July 2019): 127–30. http://dx.doi.org/10.4028/www.scientific.net/msf.963.127.

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Ternary (Si1-xCy)Gex+y solid solutions were grown on Si-face 4H-SiC applying atomic layer molecular beam epitaxy at low temperatures. The grown layers consist of twinned 3C-SiC revealed by cross section electron microscopy. The germanium was incorporated on silicon lattice sites as revealed by atomic location by channeling enhanced microanalysis transmission electron microscopy studies. The Ge concentration of the grown 3C-(Si1-xCy)Gex+y heteroepitaxial layers decreases with increasing growth temperatures, but exceeds the solid solubility limit.

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Liu, Zaidong, Yalei Wang, Xiang Xiong, et al. "Microstructure and Ablation Behavior of C/C-SiC-(ZrxHf1−x)C Composites Prepared by Reactive Melt Infiltration Method." Materials 16, no. 5 (2023): 2120. http://dx.doi.org/10.3390/ma16052120.

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C/C-SiC-(ZrxHf1−x)C composites were prepared by the reactive melt infiltration method. The microstructure of the porous C/C skeleton and the C/C-SiC-(ZrxHf1−x)C composites, as well as the structural evolution and ablation behavior of the C/C-SiC-(ZrxHf1−x)C composites, were systematically investigated. The results show that the C/C-SiC-(ZrxHf1−x)C composites were mainly composed of carbon fiber, carbon matrix, SiC ceramic, (ZrxHf1−x)C and (ZrxHf1−x)Si2 solid solutions. The refinement of the pore structure is beneficial to promote the formation of (ZrxHf1−x)C ceramic. The C/C-SiC-(ZrxHf1−x)C co

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Mahim, Z., Nurul Razliana Abdul Razak, Mohd Arif Anuar Mohd Salleh, and Norainiza Saud. "Enhancement of Microstructural and Physical Properties of Sn-0.7Cu Lead-Free Solder with the Addition of SiC Particles." Solid State Phenomena 280 (August 2018): 181–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.280.181.

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Nowadays, composite solder has gained researcher’s attention due to its promising improvement in physical and mechanical properties for lead-free solder. To improve the properties of Sn-0.7Cu (SnCu): the promising lead-free candidate, addition of silicon carbide (SiC) as a reinforcement was used into this study. However, its limitation on solderability as compared with SnAgCu (SAC) make it not an attractive alternative lead-free solder. This study was carried out to investigate the effect of SiC particle on microstructure evolution and physical properties of SnCu based solder alloys. SnCu-SiC

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Schmoch, Thomas, Patrick Möhnle, Markus A. Weigand, et al. "Incidence of Sepsis-Induced Coagulopathy (INSIC) Trial: Study Protocol of a Combined Retrospective and Prospective, Multicenter, International, Cross-Sectional, Longitudinal, and Epidemiological Observational Trial." Journal of Clinical Medicine 14, no. 12 (2025): 4222. https://doi.org/10.3390/jcm14124222.

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Background/Objectives: Sepsis and septic shock are the most severe forms of infection. Due to the intensive cross-talk of the coagulation and immune system, coagulopathies regularly occur in sepsis. The International Society on Thrombosis and Hemostasis refers to these coagulation abnormalities as sepsis-induced coagulopathies (SICs). The presence of SICs can be assessed using the SIC score. In parallel, a score for “sepsis-associated coagulopathy” (SAC) was introduced that, in contrast to the SIC score, allows coagulopathy to be classified according to its severity. In the past, multicenter,

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Rugg, Kevin L., Richard E. Tressler, Charles E. Bakis, and Jacques Lamon. "Creep of SiC–SiC microcomposites." Journal of the European Ceramic Society 19, no. 13-14 (1999): 2285–96. http://dx.doi.org/10.1016/s0955-2219(99)00118-1.

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