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Dissertations / Theses on the topic 'SiGe HBT model'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Muthukrishnan, Swaminathan. "ESD Protected SiGe HBT RFIC Power Amplifiers." Thesis, Virginia Tech, 2005. http://hdl.handle.net/10919/31705.

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Over the last few decades, the susceptibility of integrated circuits to electrostatic discharge (ESD) induced damages has justified the use of dedicated on-chip protection circuits. Design of robust protection circuits remains a challenging task because ESD failure mechanisms have become more acute as device dimensions continue to shrink. A lack of understanding of the ESD phenomena coupled with the increased sensitivity of smaller devices and time-to-market demands has led to a trial-and-error approach to ESD-protected circuit design. Improved analysis capabilities and a systematic design app

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2

Raghunathan, Uppili Srinivasan. "TCAD modeling of mixed-mode degradation in SiGe HBTs." Thesis, Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/54315.

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3

Couret, Marine. "Failure mechanisms implementation into SiGe HBT compact model operating close to safe operating area edges." Thesis, Bordeaux, 2020. http://www.theses.fr/2020BORD0265.

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Afin de répondre au marché florissant des applications térahertz, les filières BiCMOS atteignent désormais des fréquences de coupure supérieures à 0,5 THz. Ces performances dynamiques sont obtenues grâce aux améliorations technologiques apportées aux transistors bipolaires à hétérojonction (TBH) SiGe. Toutefois, cette montée en fréquence à entraîner un décalage du point de polarisation des transistors au plus proche, voir au-delà, de l’aire de sécurité de fonctionnement (SOA). En conséquence, de nombreux effets physiques « parasites » sont présents tel que l’ionisation par impact ou bien l’aut

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4

Weststrate, Marnus. "LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers." Thesis, University of Pretoria, 2011. http://hdl.handle.net/2263/26615.

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Although the majority of wireless receiver subsystems have moved to digital signal processing over the last decade, the low noise amplifier (LNA) remains a crucial analogue subsystem in any design being the dominant subsystem in determining the noise figure (NF) and dynamic range of the receiver as a whole. In this research a novel LNA configuration, namely the LC-ladder and capacitive shunt-shunt feedback topology, was proposed for use in the implementation of very wideband LNAs. This was done after a thorough theoretical investigation of LNA configurations available in the body of knowledge

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5

Bhattacharyya, Arkaprava. "Non quasi-static effects investigation for compact bipolar transistor modeling." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14294/document.

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Les transistors rapides actuels présentent un retard lorsqu’ils fonctionnent à très hautes fréquences ou en régime transitoire rapide. Cet effet est appelé effet non quasi-statique (NQS). Dans cette thèse, l’effet NQS est analysé de manière concise de façon à être directement implanté dans les modèles de composant pour les bibliothèques de circuit en utilisant le langage standard VerilogA. Les mécanismes physiques à la base de l’effet NQS sont évalués dans le domaine de fonctionnement petit signal et les résultats sont comparés aux travaux déjà publiés. S’agissant du modèle standard bipolaire

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6

Sahoo, Amit Kumar. "Electro-thermal Characterizations, Compact Modeling and TCAD based Device Simulations of advanced SiGe : C BiCMOS HBTs and of nanometric CMOS FET." Thesis, Bordeaux 1, 2012. http://www.theses.fr/2012BOR14557/document.

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Ce travail de thèse présente une évaluation approfondie des différentes techniques de mesure transitoire et dynamique pour l’évaluation du comportement électro-thermique des transistors bipolaires à hétérojonctions HBT SiGe:C de la technologie BiCMOS et des transistors Métal-Oxyde-Semiconducteur à effet de champ (MOSFET) de la technologie CMOS 45nm. En particulier, je propose une nouvelle approche pour caractériser avec précision le régime transitoire d'auto-échauffement, basée sur des mesures impulsionelles. La méthodologie a été vérifiée par des mesures statiques à différentes températures a

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7

Liang, Qingqing. "Systematic Analysis and Optimization of Broadband Noise and Linearity in SiGe HBTs." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6980.

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Noise and linearity are the two key concerns in RF transceiver systems. However, the impact of circuit topology and device technology on systems noise and linearity behaviors is poorly understood because of the complexity and diversity involved. There are two general questions that are addressed by the RF device and circuit designers: for a given device technology, how best to optimize the circuit topology; and for a given circuit topology, how best to optimize the device technology to improve the noise and linearity performance. In this dissertation, a systematic noise and linearity calc

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8

Cheng, Peng. "A Current Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SIGe HBTS." Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/19756.

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In this work a new current-sweep stress methodology for quantitatively assessing the mixed-mode reliability (simultaneous application of high current and high voltage) of advanced SiGe HBTs is presented. This stress methodology allows one to quickly obtain the complete damage spectrum of a given device from a particular technology platform, enabling better understanding of the complex voltage, current, and temperature interdependence associated with electrical stress and burn-in of advanced transistors. We consistently observed three distinct regions of mixed-mode damage in SiGe HBTs, and

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9

Banerjee, Bhaskar. "Development of Broadband Noise Models and Radio Frequency Integrated Circuits using Silicon Germanium HBTs." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/13984.

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A novel transit time based analytical broadband noise model is developed and implemented for high frequency bipolar transistors. This model is applied to a complementary (npn + pnp) silicon germanium (SiGe) heterojunction bipolar transistors (HBT). A complete set of analytical equations are derived using this transit time noise model, to express the four fundamental noise parameters in terms of device parameters. A comprehensive analysis on the ac, dc and broadband noise performance of a 200 GHz SiGe HBT technology, under cryogenic temperatures, is presented. The transit time based noise mode

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10

Zhu, Chendong. "The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14647.

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The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry, after which the new stress path, Mixed-Mode stress, is introduced. Chapter 2 is devoted to an in-depth discussion of damage mechanisms that includes the impact ionization effct and the selfheating effect. Chapter 3 goes onto the impact ionization effect using two-dimensional calibrated MEDICI simu

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11

D'Esposito, Rosario. "Electro-thermal characterization, TCAD simulations and compact modeling of advanced SiGe HBTs at device and circuit level." Thesis, Bordeaux, 2016. http://www.theses.fr/2016BORD0147/document.

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Ce travail de thèse présente une étude concernant la caractérisation des effets électrothermiques dans les transistors bipolaires à hétérojonction (HBT) en SiGe. Lors de ces travaux, deux procédés technologiques BiCMOS à l’état de l’art ont été analysés: le B11HFC de Infineon Technologies (130nm) et le B55 de STMicroelectronics (55nm).Des structures de test dédiées ont étés conçues, pour évaluer l’impact électrothermique du back end of line (BEOL) de composants ayant une architecture à un ou plusieurs doigts d’émetteur. Une caractérisation complète a été effectuée en régime continu et en mode

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12

Indrák, Martin. "Komplexní zhodnocení finanční pozice podniku Coca Cola HBC Česká republika." Master's thesis, Vysoká škola ekonomická v Praze, 2008. http://www.nusl.cz/ntk/nusl-10561.

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The Purpose of this thesis is to briefly describe the company but also the whole branch of soft drinks production. The Dissertation investigate financial structure and analyzes the company through particular instruments of financial analysis such as absolute and ratio indexes, Du Pont decomposition, Altman index, Model IN and Economic value added. Also comparison with the biggest and most dangerous competitors on the market is the other essential part. Output of this thesis presents the evaluation of the financial health and condition of the company, its market position and last but not least

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13

Rosenbaum, Tommy. "Performance prediction of a future silicon-germanium heterojunction bipolar transistor technology using a heterogeneous set of simulation tools and approaches." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0550/document.

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Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évalu

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14

García, Fernández Víctor Gerardo. "Constitutive relations to model the hot flow of commercial purity copper." Doctoral thesis, Universitat Politècnica de Catalunya, 2004. http://hdl.handle.net/10803/6043.

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Se ha llevado a cabo un estudio con el fin de observar diferencias en el comportamiento de fluencia en caliente de los cobres refinados al fuego con una pureza de 99.9%, dicho estudio ha permitido proponer modelos para predecir la curva esfuerzo-deformación y para predecir el tamaño de grano recristalizado dinámicamente. Los cobres refinados al fuego con una pureza de 99.9% se caracterizan por tener una composición residual de varios otros elementos, en algunos casos hasta 1000ppm. En los cobres con por lo menos 99.9% de pureza que tengan pocos elementos residuales, las diferencias observada

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15

Venkataraman, Sunitha. "Systematic Analysis of the Small-Signal and Broadband Noise Performance of Highly Scaled Silicon-Based Field-Effect Transistors." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16232.

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The objective of this work is to provide a comprehensive analysis of the small-signal and broadband noise performance of highly scaled silicon-based field-effect transistors (FETs), and develop high-frequency noise models for robust radio frequency (RF) circuit design. An analytical RF noise model is developed and implemented for scaled Si-CMOS devices, using a direct extraction procedure based on the linear two-port noise theory. This research also focuses on investigating the applicability of modern CMOS technologies for extreme environment electronics. A thorough analysis of the DC, small-

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16

Srirattana, Nuttapong. "High-Efficiency Linear RF Power Amplifiers Development." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6899.

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Next generation mobile communication systems require the use of linear RF power amplifier for higher data transmission rates. However, linear RF power amplifiers are inherently inefficient and usually require additional circuits or further system adjustments for better efficiency. This dissertation focuses on the development of new efficiency enhancement schemes for linear RF power amplifiers. The multistage Doherty amplifier technique is proposed to improve the performance of linear RF power amplifiers operated in a low power level. This technique advances the original Doherty amplifier sche

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17

Wu, Chun-Wei, and 吳俊緯. "X-parameter Model for SiGe HBT Power Amplifier Design Operating in Avalanche Breakdown Region." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/u5g95e.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>106<br>The prediction method of power contours from X-parameter model at different load impedance, this method is faster and wider than the conventional Load-pull method to predict SiGe HBT’s power contour , get optimization load impedance. In SiGe HBT , the linearity of output power operating in avalanche breakdown region is more higher than operating in working area. However, output power, gain, and PAE are slightly degraded. This investigation designs SiGe HBT power amplifier operating in avalanche breakdown region, exchanges dissipation power for high linearity

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18

Chen, Ho-Yin, and 陳和穎. "The Device Model of SiGe HBTs Operated under High Collector Voltage Bias." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/52269697172808380296.

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碩士<br>國立清華大學<br>電子工程研究所<br>92<br>The 0.18μm SiGe HBTs operated under high collector bias are analyzed and modeled in this thesis. A new mechanism is found that SiGe HBTs operate at high collector voltage will have two current jumps. These two sudden current jumps occur is due to tunneling effect of electrons in two quantum levels which are formed by conduction band discontinuity at collector-base junction. By multiplying those tunneling electrons with avalanche multiplication factor in the depletion region, large amount of electron-hole pairs will flow out of collector and base terminals. Two

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19

Alves, João Carlos das Neves. "Modelação de sistemas de AQS com painéis solares térmicos e apoio elétrico." Master's thesis, 2016. http://hdl.handle.net/10316/81489.

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Dissertação de Mestrado Integrado em Engenharia Electrotécnica e de Computadores apresentada à Faculdade de Ciências e Tecnologia<br>O sistema solar térmico para aquecimento de água é utilizado principalmente em ambiente doméstico para as Águas Quentes Sanitárias, sendo nos dias de hoje um serviço indispensável para o bem-estar de todos nós. De modo a garantir a estabilidade dos sistemas de energia elétrica, tendo em conta a descentralização da geração elétrica e a produção a nível local, a gestão da procura tem ganho cada vez mais importância. A gestão da procura permite desviar e diminuir co

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