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Journal articles on the topic 'SiGe HBT model'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Hu Hui-Yong, Zhang He-Ming, Lyu Yi, et al. "SiGe HBT large signal equivalent circuit model." Acta Physica Sinica 55, no. 1 (2006): 403. http://dx.doi.org/10.7498/aps.55.403.

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2

Bo, Han, Li Shoulin, Cheng Jiali, Yin Qiuyan, and Gao Jianjun. "MEXTRAM model based SiGe HBT large-signal modeling." Journal of Semiconductors 31, no. 10 (2010): 104004. http://dx.doi.org/10.1088/1674-4926/31/10/104004.

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3

S., M.Moududul Islam, Arafat Yeasir, Ziaur Rahman Khan Md., and Bahar Chowdhury Md.Iqbal. "Base Transit Time Modeling of Gaussian-Doped SiGe HBT Considering Field-Dependence of Mobility." International Journal of Research in Electronics and Computer Engineering (IJRECE) 4, no. 1 (2016): 53–59. https://doi.org/10.5281/zenodo.14702660.

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This work assesses the effects of fielddependence of the carrier mobility on the base transit time of an npn SiGe hetero-junction bipolar transistor (HBT) with its base heavily doped with Gaussian type doping profile. Three types of Ge dosing, namely, box, trapezoidal and triangular profiles of SiGe HBT is represented by a generalized trapezoidal Ge-dosing profile. An analytical model has been developed considering this field-dependence. The model also includes the various effects caused by the non-uniformity of the base doping profile and also, of the Ge-content in the base. The model applica

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4

Chowdhury, Md. Iqbal Bahar. "Base Transit Time Modeling of Gaussian-Doped SiGe HBT Considering Field-Dependence of Mobility." INTERNATIONAL JOURNAL OF RESEARCH IN ELECTRONICS AND COMPUTER ENGINEERING 4, no. 1 (2016): 53–59. https://doi.org/10.5281/zenodo.15315518.

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This work assesses the effects of fielddependence of the carrier mobility on the base transit time of an npn SiGe hetero-junction bipolar transistor (HBT) with its base heavily doped with Gaussian type doping profile. Three types of Ge dosing, namely, box, trapezoidal and triangular profiles of SiGe HBT is represented by a generalized trapezoidal Ge-dosing profile. An analytical model has been developed considering this field-dependence. The model also includes the various effects caused by the non-uniformity of the base doping profile and also, of the Ge-content in the base. The model applica

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5

Li, Yao, Deyi Kong, Jiang Zhen, and Juyan Xu. "A base transport model for ultra-thin-base SiGe HBT." International Journal of Electronics 87, no. 11 (2000): 1281–87. http://dx.doi.org/10.1080/002072100750000097.

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6

Fregonese, S., G. Avenier, C. Maneux, A. Chantre, and T. Zimmer. "A compact model for SiGe HBT on thin-film SOI." IEEE Transactions on Electron Devices 53, no. 2 (2006): 296–303. http://dx.doi.org/10.1109/ted.2005.862237.

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7

Saha, Bishwadeep, Sebastien Fregonese, Anjan Chakravorty, Soumya Ranjan Panda, and Thomas Zimmer. "Sub-THz and THz SiGe HBT Electrical Compact Modeling." Electronics 10, no. 12 (2021): 1397. http://dx.doi.org/10.3390/electronics10121397.

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From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepa

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8

Hui-Yong, Hu, Zhang He-Ming, Dai Xian-Ying, et al. "Model of transit time for SiGe HBT collector junction depletion-layer." Chinese Physics 14, no. 7 (2005): 1439–43. http://dx.doi.org/10.1088/1009-1963/14/7/030.

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9

Zaręba, Agnieszka, Lidia Łukasiak, and Andrzej Jakubowski. "Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base." Journal of Telecommunications and Information Technology, no. 3 (June 25, 2023): 88–92. http://dx.doi.org/10.26636/jtit.2007.3.836.

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A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

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10

Niu, Guofu, Yiao Li, Huaiyuan Zhang, Andries Scholten, and Marnix Willemsen. "Avalanche Modeling in Mextram 505 and Implications on Circuit Simulations." ECS Transactions 109, no. 4 (2022): 179–88. http://dx.doi.org/10.1149/10904.0179ecst.

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This paper presents recent advances in compact modeling of avalanche multiplication in Mextram 505, an industry-standard transistor model, including new model features, improved model implementations, and implications for SiGe HBT RF circuit simulation and device modeling.

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11

Gupta, Dinesh, and Kaushik Nayak. "Silicon-Germanium Heterojunction Bipolar Transistor DC and AC Analysis Operating under Cryogenic Temperature." Electronics 11, no. 24 (2022): 4164. http://dx.doi.org/10.3390/electronics11244164.

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In this work, the numerical simulation of a SiGe heterojunction bipolar transistor (HBT) for DC and AC performance operating at cryogenic temperature with a hydrodynamic carrier transport model is analyzed. A new modified temperature-dependent Si1−xGex energy bandgap model was used. Using a simplified 2D TCAD design structure, the device characteristics on 55 nm SiGe HBT technology and the mobility model are calibrated with experimental data. Base current reversal due to induced impact-ionization at the collector-base junction is analyzed, where the estimated collector-emitter breakdown voltag

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12

Xu, Xiao Bo, He Ming Zhang, Hui Yong Hu, Shan Shan Qin, and Jiang Tao Qu. "Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology." Applied Mechanics and Materials 110-116 (October 2011): 5452–56. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.5452.

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An analytical expression for collector resistance of a novel vertical SiGe partially-depleted accumulation-subcollector HBT on thin SOI is obtained. Supported by simulation result, the resistance decreases quickly with the increase of substrate-collector bias and improves the transit frequency dramatically. The model is found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.

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13

Sun, Ya-Bin, Jun Fu, Yu-Dong Wang, Wei Zhou, Wei Zhang, and Zhi-Hong Liu. "Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model." Chinese Physics B 25, no. 4 (2016): 048501. http://dx.doi.org/10.1088/1674-1056/25/4/048501.

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14

Sun, Yabin, Ziyu Liu, Xiaojin Li, and Yanling Shi. "Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT." IEEE Access 7 (2019): 5865–73. http://dx.doi.org/10.1109/access.2018.2879972.

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15

Sokolic, S., B. Ferk, and S. Amon. "SiGe HBT simulation based on mp* (T, NA, xGE) numerical model HEM." Le Journal de Physique IV 08, PR3 (1998): Pr3–117—Pr3–120. http://dx.doi.org/10.1051/jp4:1998327.

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16

Lee, Chie-In, Yan-Ting Lin, Bo-Rung Su, and Wei-Cheng Lin. "SiGe HBT Large-Signal Table-Based Model With the Avalanche Breakdown Effect Considered." IEEE Transactions on Electron Devices 62, no. 1 (2015): 75–82. http://dx.doi.org/10.1109/ted.2014.2373057.

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17

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, and Ma Jian-Li. "A collector space charge region model for SiGe HBT on thin-film SOI." Acta Physica Sinica 60, no. 7 (2011): 078502. http://dx.doi.org/10.7498/aps.60.078502.

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18

Zhang, Anni, Guofu Niu, Yiao Li, Marnix Willemsen, and Andries Scholten. "Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram." ECS Transactions 114, no. 2 (2024): 83–91. http://dx.doi.org/10.1149/11402.0083ecst.

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The linear and nonlinear SH models in the latest versions of Mextram are evaluated, with an emphasis on high-power biases and ambient temperature scalability. The Mextram nonlinear SH model is shown to have limitations in fitting high-power regions at all temperatures. An investigation of the dynamic thermal resistance rTH reveals that it is only a function of Tjunc, which limits the fitting capability of the current nonlinear SH model. A new nonlinear SH model is proposed based on analysis of the rTH characteristics to improve high-power region fitting at multiple ambient temperatures. The mo

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19

Pellish, Jonathan A., Robert A. Reed, Akil K. Sutton, et al. "A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations." IEEE Transactions on Nuclear Science 54, no. 6 (2007): 2322–29. http://dx.doi.org/10.1109/tns.2007.909987.

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20

Lu, T. C., and J. B. Kuo. "An analytical SiGe-base HBT model and its effects on a BICMOS inverter circuit." IEEE Transactions on Electron Devices 41, no. 2 (1994): 272–76. http://dx.doi.org/10.1109/16.277366.

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21

Saleh, Alaa, Abdel Kader El Rafei, Mountakha Dieng, et al. "Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's." International Journal of Microwave and Wireless Technologies 4, no. 6 (2012): 569–78. http://dx.doi.org/10.1017/s1759078712000566.

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The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expec

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22

Islam, Muhammad Johirul, and Md Iqbal Bahar Chowdhury. "Recombination Effects on Base Transit Time in Exponentially-Doped SiGe Heterojunction Bipolar Transistor (HBT): An Analytical Approach." Journal of Engineering and Exact Sciences 11, no. 1 (2025): 21464. https://doi.org/10.18540/jcecvl11iss1pp21464.

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In conventional models of base transit time in SiGe HBTs, the recombination in the base is usually neglected because the base is considered very thin to justify simplifications in the numerical calculation. Indeed, this assumption turns out not to be very valid at moderate injection levels, since carrier recombination could have important consequences for transistor performance. The paper presents an analytical model, which includes the recombination process in the exponentially doped base of SiGe HBTs operating under intermediate injection conditions. The inclusion of recombination makes the

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23

Xu Xiao-Bo, Zhang He-Ming, and Hu Hui-Yong. "Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI." Acta Physica Sinica 60, no. 11 (2011): 118501. http://dx.doi.org/10.7498/aps.60.118501.

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24

KUMAR, ARUN. "Relative Analysis of Speed and Noise Performance of SiGe HBT Between Experimental and Simulated Model." IOSR Journal of Electronics and Communication Engineering 1, no. 3 (2012): 18–27. http://dx.doi.org/10.9790/2834-0131827.

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25

d’Alessandro, Vincenzo, Antonio Pio Catalano, Ciro Scognamillo, et al. "A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches." Electronics 12, no. 16 (2023): 3471. http://dx.doi.org/10.3390/electronics12163471.

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This paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the base-emitter voltage and the junction temperature. The theory behind the techniques is described with a unified and comprehensible nomenclature. Advantages, underlying approximations, and limitations of the methods are illustrated. The accuracy is assessed by emulating the DC measurements with PSPIC

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26

JUNGEMANN, CHRISTOPH, BURKHARD NEINHÜS, and BERND MEINERZHAGEN. "HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES." International Journal of High Speed Electronics and Systems 13, no. 03 (2003): 823–48. http://dx.doi.org/10.1142/s0129156403002046.

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A 2D hydrodynamic model based on modified Langevin forces for terminal current noise in the RF range is presented for Si and SiGe devices, where all transport and noise parameters are generated by full-band Monte Carlo simulations under bulk conditions and stored in lookup tables. Since these tables have to be built only once, the accuracy of the noise model is improved without increasing the CPU time compared to models based on analytical expressions for the parameters. The accuracy of the noise model is assessed by comparison with the Monte Carlo device model and good agreement of both model

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27

Lee, Chie-In, Yan-Ting Lin, and Wei-Cheng Lin. "An Improved Noise Model for SiGe HBT With an Inductive Breakdown Network in the Avalanche Region." IEEE Transactions on Device and Materials Reliability 15, no. 4 (2015): 588–94. http://dx.doi.org/10.1109/tdmr.2015.2490084.

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28

Wei, JiaNan, Yang Li, WeiTao Yang, et al. "Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation." Science China Technological Sciences 63, no. 5 (2020): 851–58. http://dx.doi.org/10.1007/s11431-019-1474-x.

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29

Jungemann, C., B. Neinhüs, and B. Meinerzhagen. "Investigation of the Local Force Approximation in Numerical Device Simulation by Full-band Monte Carlo Simulation." VLSI Design 13, no. 1-4 (2001): 281–85. http://dx.doi.org/10.1155/2001/10378.

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The critical assumptions in the drift-diffusion model are the local force approximation and the use of the Einstein relation under nonequilibrium conditions. The validity of these two approximations is investigated by full-band Monte Carlo simulation for a SiGe-HBT. It is found that neither the local force approximation nor the Einstein relation holds. Even Einstein relations generalized with the local temperature fail under quasiballistic transport conditions, indicating that the energy transport and hydrodynamic approach are also problematic.

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30

Taher, H., D. Schreurs, R. Gillon, et al. "Detecting variations of small-signal equivalent-circuit model parameters in the Si/SiGe HBT process with ANN." International Journal of RF and Microwave Computer-Aided Engineering 15, no. 1 (2004): 102–8. http://dx.doi.org/10.1002/mmce.20056.

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31

Sun, Yabin, Jun Fu, Ji Yang, et al. "An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction." IEEE Transactions on Microwave Theory and Techniques 63, no. 10 (2015): 3131–41. http://dx.doi.org/10.1109/tmtt.2015.2468211.

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32

d’Alessandro, Vincenzo, Antonio Pio Catalano, and Ciro Scognamillo. "A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part II: Approaches Based on Intersection Points." Electronics 14, no. 9 (2025): 1743. https://doi.org/10.3390/electronics14091743.

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This work constitutes Part II of a comprehensive three-part study critically reviewing techniques for the indirect extraction of the thermal resistance in bipolar transistors using simple DC current/voltage measurements. While Part I focused on thermometer-based methods, this study examines techniques that rely on intersection points between electrical characteristics. The accuracy of these methods is assessed by applying them to DC curves obtained through PSPICE simulations of an in-house transistor model incorporating nonlinear thermal effects, and comparing the extracted thermal resistance

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33

Lee, Chie-In, Yan-Ting Lin, and Wei-Cheng Lin. "An Improved VBIC Large-Signal Equivalent-Circuit Model for SiGe HBT With an Inductive Breakdown Network by $X$ -Parameters." IEEE Transactions on Microwave Theory and Techniques 63, no. 9 (2015): 2756–63. http://dx.doi.org/10.1109/tmtt.2015.2458313.

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34

Hong, G. B., and J. G. Fossum. "Implementation of nonlocal model for impact-ionization current in bipolar circuit simulation and application to SiGe HBT design optimization." IEEE Transactions on Electron Devices 42, no. 6 (1995): 1166–73. http://dx.doi.org/10.1109/16.387252.

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35

Taher, H., D. Schreurs, and B. Nauwelaers. "Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information." AEU - International Journal of Electronics and Communications 60, no. 8 (2006): 567–72. http://dx.doi.org/10.1016/j.aeue.2005.11.004.

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36

Kim, Taeyeong, Garam Kim, Moon-Kyu Cho, John D. Cressler, Jaeduk Han, and Ickhyun Song. "Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors." Sensors 24, no. 22 (2024): 7130. http://dx.doi.org/10.3390/s24227130.

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The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under dc stress and its potential impact on the performance of basic analog amplifiers are investigated. In order to properly reflect the stress effects in various circuit applications, the degradations under three different configurations (active bias, diode connection, and off state) were experimentally characterized with the stress voltages applied up to 3000 s for each case. Based on the changes in the Gummel response, the degradations in device parameters such as current gain (β), transcondu

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37

Kim, Taeyeong, Gyungtae Ryu, Jongho Lee, et al. "Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers." Electronics 13, no. 8 (2024): 1445. http://dx.doi.org/10.3390/electronics13081445.

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performan

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38

Li, Yiao, Guofu Niu, Andries Scholten, and Marnix Willemsen. "Compact Modeling of Base Current High Injection Effect in SiGe HBTs." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2316. https://doi.org/10.1149/ma2024-02322316mtgabs.

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In bipolar transistor compact modeling, the forward mode base current typically consists of three components: space-charge recombination, back injection into the emitter, and neutral-base-recombination (NBR). At medium and high base-emitter voltages (VBE), the emitter back injection and NBR components dominate, and both increase exponentially with VBE. Deviation from the ideal behavior occurs at high VBE due to parasitic base and emitter resistance or self-heating. However, in many SiGe HBTs, standard compact models fail to capture experimentally observed IB-VBE characteristics, where the base

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39

Zhang, Anni, Guofu Niu, Yiao Li, Marnix Willemsen, and Andries Scholten. "Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2317. https://doi.org/10.1149/ma2024-02322317mtgabs.

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Accurate modeling of self-heating (SH) induced junction temperature rise is crucial for circuit design at high current densities required for high speed and high gain, as well as for reliability, as most degradations worsen at higher temperatures. For relatively lower power, the junction temperature rise (Trise) is typically modeled as a linear function of the dissipated power (Pdiss), with the slope being a parameter named thermal resistance (Rth), which can be further modeled as a function of ambient temperature (Tamb). In Mextram, this was the case until the recent implementation of the non

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40

Lyu Yi, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, and Shu Bin. "Junction capacitance models of SiGe HBT." Acta Physica Sinica 53, no. 9 (2004): 3239. http://dx.doi.org/10.7498/aps.53.3239.

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41

Niu, Guofu, Yiao Li, Huaiyuan Zhang, Andries Scholten, and Marnix Willemsen. "Avalanche Modeling in Mextram 505 and Implications on Circuit Simulations." ECS Meeting Abstracts MA2022-02, no. 32 (2022): 1202. http://dx.doi.org/10.1149/ma2022-02321202mtgabs.

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This paper presents several recent advances in compact modeling of avalanche multiplication in Mextram 505, an industry standard transistor model, including both new model features and improved model implementations. Implications of these improvements on circuit simulation are illustrated using RF SiGe HBTs. Feature wise, Mextram 505 adds a new physics-based model of the avalanche multiplication factor that accounts for the complex evolution of the epi-layer electric field at high current density, which can be activated with swavl=3. At a given collector-base bias VCB, the avalanche factor Gem

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42

Friedrich, M., and H. M. Rein. "Analytical current-voltage relations for compact SiGe HBT models. I. The "idealized" HBT." IEEE Transactions on Electron Devices 46, no. 7 (1999): 1384–93. http://dx.doi.org/10.1109/16.772480.

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43

Humbert, Olivier, and Hans-Peter Kiem. "Long-Term Increase in Fetal Hemoglobin Expression in Nonhuman Primates Following Transplantation of Autologous Bcl11a Nuclease-Edited HSCs." Blood 126, no. 23 (2015): 2035. http://dx.doi.org/10.1182/blood.v126.23.2035.2035.

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Abstract Elevated levels of fetal hemoglobin (HbF) ameliorate the clinical symptoms of beta-thalassemia and sickle cell anemia. The transcription factor B-cell lymphoma/leukemia 11A (BCL11A) is required for silencing of gamma-globin expression in adult erythroid cells and functions as a switch from fetal to adult hemoglobin production in humans. BCL11A therefore constitutes a therapeutic target for the treatment of hemoglobinopathies. We inactivated BCL11A function by double-strand DNA break-induced mutagenesis using Transcription Activator-Like Effector Nucleases (TALENs). 20 to 30% gene edit

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44

Ahmad, S., M. H. Lashari, and U. Farooq. "A preliminary study on devising a hematological formula for estimation of hemoglobin from packed cell volume in beetal goats." Arquivo Brasileiro de Medicina Veterinária e Zootecnia 74, no. 1 (2022): 77–82. http://dx.doi.org/10.1590/1678-4162-12568.

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ABSTRACT The study was devised with the aim to evaluate the relationship between hemoglobin (Hb) concentration and Packed Cell Volume (PCV) in beetal goats being reared under pastoralism. It also aims to devise a hematological formula for estimation of Hb from PCV. Female (n=59) and male goats (n=41) were bled for PCV determination through microhematocrit method, and Hb estimation through Sahli’s hemoglobinometer (HbD) as well as through calculation being 1/3rd of PCV (HbC). The HbD and HbC were statistically non-significant (P≥0.05) for male and female beetal goats. Overall, significantly (P≤

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45

Hirsch, Rhoda Elison, Vladimir Malashkevich, Tatiana C. Balazs, and Steven C. Almo. "High Resolution Tertiary and Quaternary Structural Changes in Deoxy and Liganded Hemoglobin E." Blood 112, no. 11 (2008): 540. http://dx.doi.org/10.1182/blood.v112.11.540.540.

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Abstract Hemoglobin (Hb) E (β26 Glu→Lys), known to be more unstable than HbA in vitro, remains an enigma in terms of its contributions to red blood cell (RBC) pathophysiological mechanisms. EE individuals exhibit a mild, chronic anemia while HbE-β thalassemia individuals show a range of clinical manifestations, including high morbidity and death, often resulting from cardiac disease. To determine pathophysiological consequences originating from HbE, we created a transgenic mouse expressing exclusively human HbE with equivalent α- and β-chains [Chen et al., Blood 106(11):892a, 2005]. This mice

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46

Friedrich, M., and H. M. Rein. "Analytical current-voltage relations for compact SiGe HBT models. II. Application to practical HBTs and parameter extraction." IEEE Transactions on Electron Devices 46, no. 7 (1999): 1394–401. http://dx.doi.org/10.1109/16.772481.

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47

Farooq, Umer, Musadiq Idris, Nouman Sajjad, et al. "Investigating the potential of packed cell volume for deducing hemoglobin: Cholistani camels in perspective." PLOS ONE 18, no. 5 (2023): e0280659. http://dx.doi.org/10.1371/journal.pone.0280659.

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In human medical practice, a hematological rule of three has been validated for healthy human populations. One such formula is estimating hemoglobin (Hb) levels as 1/3rd of Packed Cell Volume (PCV). However, no such hematological formulae have been devised and validated for veterinary medical practice. The present study was devised with an aim to evaluate the relationship between hemoglobin (Hb) concentration and Packed Cell Volume (PCV) in camels (n = 215) being reared under pastoralism, and to devise a simple pen-side hematological formula for estimation of Hb from PCV. The PCV was determine

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BRAVINA, L., L. V. MALININA, I. ARSENE, M. S. NILSSON, L. I. SARYCHEVA, and E. ZABRODIN. "STUDY OF PARTICLE CORRELATIONS AT RHIC ENERGIES WITHIN THE QUARK-GLUON STRING MODEL." International Journal of Modern Physics E 16, no. 07n08 (2007): 2116–22. http://dx.doi.org/10.1142/s0218301307007556.

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The experimental data obtained by the Relativistic Heavy Ion Collider (RHIC) have shown surprisingly large elliptic flow and small correlation (Hanbury-Brown-Twiss, HBT) radii. Quark-Gluon String Model (QGSM) is found to reproduce well many of the flow features in heavy-ion collisions, whereas the models based on the longitudinal excitation of strings essentially underpredict the elliptic flow seen at RHIC. Our aim is to study the HBT correlations within the same QGSM approach. The transverse momentum dependence of correlation radii R long , R out and R side obtained in the QGSM is compared wi

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Zhang, Wenqian, Mei Ge, Yi Li, Shuxin Tan, Chenhui Yu, and Dunjun Chen. "TCAD Simulation of an E-Mode Heterojunction Bipolar p-FET with Imax > 240 mA/mm." Electronics 13, no. 23 (2024): 4752. https://doi.org/10.3390/electronics13234752.

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This work demonstrates an enhancement mode heterojunction bipolar p-FET (HEB-PFET) structure with a AlGaN/GaN heterojunction bipolar transistor (HBT) integrated on the drain side. Such device design notably contributes to the ultra-high output current density, which is conventionally limited by the low hole mobility and concentration in the p-FETs. The HEB-PFET exhibits an output current density of 241 mA/mm, which is 134 times larger compared to the conventional p-FET (C-PFET) and 2.4 times of the homojunction bipolar p-FET (HOB-PFET). This can be attributed to a better current gain of HBT th

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Ortiz-Zambrano, Edison Bolivar, Jefferson Torres-Quezada, and José Fabián Véliz-Párraga. "Evaluación térmica y lumínica en prototipos de cubiertas ligeras, para clima cálido húmedo." Revista Hábitat Sustentable 11, no. 2 (2021): 60–71. http://dx.doi.org/10.22320/07190700.2021.11.02.05.

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The zinc sheet roof is one of the most popular elements in Latin American architecture, and in many other regions with warm humid climates. Creating lighting and thermal alternatives focused on this typology would imply major benefits in the environmental and social fields. This study carried out in Manabí, Ecuador, evaluates three prototypes of light roofs, combining zinc with PVC, in order to determine the correct configuration of translucent material to create environments that are within thermal and lighting parameters. The results indicate that the empirical solutions model has the lowest

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