Log in

Relevant bibliographies by topics / SiGe, quantum well, photoluminescence, carrier dynamics / Journal articles

To see the other types of publications on this topic, follow the link: SiGe, quantum well, photoluminescence, carrier dynamics.

Journal articles on the topic 'SiGe, quantum well, photoluminescence, carrier dynamics'

Author: Grafiati

Published: 9 March 2023

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 44 journal articles for your research on the topic 'SiGe, quantum well, photoluminescence, carrier dynamics.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Lee, Zhen Sheng, Ling Min Kong, Zhe Chuan Feng, Gang Li, Hung Lin Tsai, and Jer Ren Yang. "Luminescence Dynamics and Structural Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diodes." Advanced Materials Research 216 (March 2011): 445–49. http://dx.doi.org/10.4028/www.scientific.net/amr.216.445.

Full text

Abstract:

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) have been studied by temperature dependent photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL) spectroscopic techniques. Two typical samples are studied, both consisting of five periods of InGaN wells with different indium compositions of 21% and 24%, respectively. According to the PL and PLE measurement results, large values of activation energy and Stokes’ shift are obtained. This indicates that higher Indium composition results in an increase of composition fluctu

APA, Harvard, Vancouver, ISO, and other styles

2

Ng, T. K., S. F. Yoon, S. Z. Wang, L. H. Lin, Y. Ochiai, and T. Matsusue. "Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics." Journal of Applied Physics 94, no. 5 (2003): 3110–14. http://dx.doi.org/10.1063/1.1601297.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Hung, K. M., J. Y. Kuo, C. C. Hong, H. H. Cheng, G. Sun, and R. A. Soref. "Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well." Applied Physics Letters 96, no. 21 (2010): 213502. http://dx.doi.org/10.1063/1.3432075.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

WENG, GUO-EN, BAO-PING ZHANG, MING-MING LIANG, et al. "OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS." Functional Materials Letters 06, no. 02 (2013): 1350021. http://dx.doi.org/10.1142/s1793604713500215.

Full text

Abstract:

Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy lev

APA, Harvard, Vancouver, ISO, and other styles

5

KOCHERESHKO, V. P., A. V. PLATONOV, G. V. MIKHAILOV, et al. "TEMPORAL DYNAMICS OF EXCITON–TRION SYSTEM." International Journal of Nanoscience 02, no. 06 (2003): 453–59. http://dx.doi.org/10.1142/s0219581x03001553.

Full text

Abstract:

Time-resolved and time-integrated circularly-polarized photoluminescence of excitons and trions have been studied in external magnetic fields up to 10 T. ZnSe-based quantum well structures of n-type with carrier densities varied from 5×109 to 1011 cm -2 were used in this study. Absence of the chemical equilibrium in the exciton–trion system has been demonstrated at low temperatures (<10 K ). The recovery of the equilibrium has been found at elevated temperatures (<15 K ).

APA, Harvard, Vancouver, ISO, and other styles

6

Lockwood, D. J., N. L. Rowell, A. Benkouider, A. Ronda, L. Favre, and I. Berbezier. "Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)." Beilstein Journal of Nanotechnology 5 (December 30, 2014): 2498–504. http://dx.doi.org/10.3762/bjnano.5.259.

Full text

Abstract:

We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up in the substrate by focused ion beam patterning for the preferential nucleation and growth of these well-organized NWs. The NWs thus produced have a diameter of 200 nm, a length of 200 nm, and a Ge concentration x = 0.15. Their photoluminescence (PL) spectra were measured at low temperatures (from 6 to 25 K) with excitation at 405 and 458 nm. There

APA, Harvard, Vancouver, ISO, and other styles

7

Chi, Haitao, Yu Du, and Gongyu Li. "Analysis of InGaN Multiple-Quantum-Well Photoelectric Device of Visible Light Communication." Journal of Nanoelectronics and Optoelectronics 15, no. 7 (2020): 909–16. http://dx.doi.org/10.1166/jno.2020.2850.

Full text

Abstract:

The key to achieving high-speed and high-quality visible light communication is to increase the modulation speed of Light-Emitting Diode (LED). Therefore, in this study, the influence of the Composite Mechanism of Carrier (CMC) on the modulation speed of LED is studied by designing different structures of the InGaN Multi-quantum-well (MQW) LED active region. Because the carrier subspace waves function of narrow quantum well LED overlaps more frequently and the electron leakage effect is more significant, the compound rate is faster and the modulation bandwidth is higher. InGaN quantum barrier

APA, Harvard, Vancouver, ISO, and other styles

8

Li, Jianfei, Duo Chen, Kuilong Li, et al. "Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources." Crystals 11, no. 9 (2021): 1061. http://dx.doi.org/10.3390/cryst11091061.

Full text

Abstract:

The excitation power and temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra were studied in green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED). An examination of the PL-325, PL-405, and EL spectra at identical optical or electrical generation rates at room temperature showed that the normalized spectra exhibited different characteristic peaks. In addition, the temperature behavior of the peak energy was S-shaped for the PL-405 spectrum, while it was V-shaped for the EL spectrum. These measurement results demonstrate that the exc

APA, Harvard, Vancouver, ISO, and other styles

9

Güçlü, A. D., C. Rejeb, R. Maciejko, D. Morris, and A. Champagne. "Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure." Journal of Applied Physics 86, no. 6 (1999): 3391–97. http://dx.doi.org/10.1063/1.371219.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Yang, Zhe, Renlong Zhu, Xiaoxuan Zheng, Quanbing Pei, Junjun Tan, and Shuji Ye. "Formation of multiple quantum wells m 2D/3D perovskite heterostructures invalidates phonon bottleneck effect." Chinese Journal of Chemical Physics 36, no. 6 (2023): 631–38. http://dx.doi.org/10.1063/1674-0068/cjcp2310098.

Full text

Abstract:

The importance of the phonon bottleneck effect on the optoelectronic properties of organic-inorganic hybrid perovskites (OIHPs) has been well documented. While randomly distributed multiple quantum wells (MQWs) are frequently generated in 2D/3D perovskite heterostructures, the influence of MQWs formation in 2D/3D perovskite heterostructures on the phonon bottleneck effect is poorly understood. In this study, we construct 2D/3D perovskite heterostructures using 2D OIHP (NH3(CH2)8NH3PbI4, OdAPbI4) to passivate 3D OIHP (FAPbI3) and investigate their excitons and carrier dynamics by employing phot

APA, Harvard, Vancouver, ISO, and other styles

11

Mori-Tamamura, Keito, Yuya Morimoto, Atsushi A. Yamaguchi, et al. "Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red." Japanese Journal of Applied Physics 62, no. 10 (2023): 105501. http://dx.doi.org/10.35848/1347-4065/acf79f.

Full text

Abstract:

Abstract In this study, we investigate In composition and the carrier density dependences of radiative and nonradiative recombination lifetimes for a series of c-plane InGaN quantum well (QW) samples with different emission wavelengths (450 nm to 620 nm). The two lifetimes can be separately evaluated using photoluminescence (PL) decay time, obtained by time-resolved PL measurement, combined with the value of internal quantum efficiency (IQE) obtained by simultaneous photoacoustic and PL measurements. It is found that the decrease in IQE with increasing In composition is caused by the reduction

APA, Harvard, Vancouver, ISO, and other styles

12

Tsybeskov, Leonid, Dong-Kyun Ko, and Rakina Islam. "(Invited) Photoluminescence Dynamics in PbS/CdS Core/Shell Nanocrystal Films: Carrier Recombination and Energy Transfer." ECS Meeting Abstracts MA2024-01, no. 22 (2024): 1312. http://dx.doi.org/10.1149/ma2024-01221312mtgabs.

Full text

Abstract:

Colloidal semiconductor nanocrystals (NCs) exhibit highly controllable size-dependent optical properties due to the quantum confinement effect. Among other semiconductor NCs, the lead chalcogenides, especially PbS, are one of the most studied and promising NC systems. They are the material of choice for studies of fundamental phenomena as well as for the development of solution processed infrared optoelectronic devices including LEDs, lasers, solar cells, and photodetectors. Compared to organically passivated NCs, the core-shell approach (more specifically PbS/CdS core-shell NCs) offers not on

APA, Harvard, Vancouver, ISO, and other styles

13

Mori-Tamamura, Keito, Yuya Morimoto, Atsushi A. Yamaguchi, et al. "Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage." Japanese Journal of Applied Physics 63, no. 1 (2023): 01SP19. http://dx.doi.org/10.35848/1347-4065/acfb18.

Full text

Abstract:

Abstract In this study, we have separately evaluated the radiative and non-radiative recombination lifetimes for InGaN quantum well (QW) samples with different amounts of ion-implantation damage, and have investigated their temperature dependence. The radiative and non-radiative recombination lifetimes were calculated from photoluminescence (PL) decay time measured by time-resolved PL measurements, combined with the absolute internal quantum efficiency values estimated by the simultaneous photoacoustic and PL measurements. As a result, the experimentally observed radiative recombination lifeti

APA, Harvard, Vancouver, ISO, and other styles

14

Jang, D. J., J. T. Olesberg, M. E. Flatté, Thomas F. Boggess, and T. C. Hasenberg. "Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion." Applied Physics Letters 70, no. 9 (1997): 1125–27. http://dx.doi.org/10.1063/1.118504.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Schrottke, L., R. Hey, and H. T. Grahn. "Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy." Applied Physics Letters 79, no. 5 (2001): 629–31. http://dx.doi.org/10.1063/1.1388873.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Yang, Shan-Jen, Ying-Chih Pu, and Yung-Jung Hsu. "Cu₂o@Cu_2-Xs Core@Shell Nanocrystals: Morphologic Effect on Photocatalytic Hydrogen Production." ECS Meeting Abstracts MA2024-02, no. 59 (2024): 4014. https://doi.org/10.1149/ma2024-02594014mtgabs.

Full text

Abstract:

Cu2O nanocrystals (NCs) with different morphologies, including the cube (Cub), the octahedron (Oct), and the rhombic dodecahedron (Rd) were prepared by hydrothermal synthesis by adding different kinds of anions as adsorbents. Subsequently, Cu2O NCs were used as templates to prepare Cu2O@Cu2-xS core@shell nanocomposite structures with three morphologies by the anion exchange method. By employing time-resolution photoluminescence and ultraviolet photoelectron spectroscopy, the correlations among charge carrier dynamics, energy band structure and photocatalytic activity of Cu2O@Cu2-xS was analyze

APA, Harvard, Vancouver, ISO, and other styles

17

Marcinkevičius, Saulius, Tanay Tak, Yi Chao Chow, et al. "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs." Applied Physics Letters 124, no. 18 (2024). http://dx.doi.org/10.1063/5.0206357.

Full text

Abstract:

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar 101¯1 QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. I

APA, Harvard, Vancouver, ISO, and other styles

18

Zhao, Chunyan, Shasha Li, and Yong Yan. "Anomalous Photoluminescence Enhancement and Resonant Charge Transfer in Type-II 2D Lateral Heterostructures." Chinese Physics B, March 7, 2023. http://dx.doi.org/10.1088/1674-1056/acc1d1.

Full text

Abstract:

Abstract Type-II band alignment accommodates efficient charge transfer and separation at the semiconductor heterointerface, which leads to photoluminescence (PL) quenching. Recently, however, several works demonstrated anomalous localized PL enhancement at the interface of type-II two-dimensional (2D) heterostructures. Additionally, the dominant physical mechanism of this enhanced PL emission has not been well understood. In this work, we symmetrically studied the exciton dynamics of type-II lateral heterostructures of monolayer MoS2 and WS2 at room temperature. The strong PL enhancement along

APA, Harvard, Vancouver, ISO, and other styles

19

Marcinkevičius, Saulius, Rosa Leon, Charlene Lobo, Brian Magness, and William Taylor. "Time Resolved Studies of Proton Irradiated Quantum Dots." MRS Proceedings 722 (2002). http://dx.doi.org/10.1557/proc-722-k11.6.

Full text

Abstract:

AbstractThe effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots. Results were compared to irradiation effects on carrier dynamics in thin InGaAs quantum wells. We find that carrier lifetimes in QDs are much less affected by proton irradiation than in quantum wells, which can be attributed to the three-dimensional carrier confinement in quantum dots.

APA, Harvard, Vancouver, ISO, and other styles

20

Cao, Fuyi, Zhan Su, Cong Wang, et al. "Carrier tunneling and transport in coupled quantum wells: Modeling and experimental verification." Applied Physics Letters 124, no. 16 (2024). http://dx.doi.org/10.1063/5.0202473.

Full text

Abstract:

We propose an approach to elucidate carrier dynamics by developing a robust rate equation model capable of explaining carrier dynamics in a dual-well system. To experimentally validate the accuracy and reliability of our model, we utilized a combination of time-resolved photoluminescence and spatially resolved cathodoluminescence measurements. The integration of these complementary techniques allowed us to thoroughly investigate the spectral characteristics in both wells, revealing distinct features attributed to carrier tunneling and transport effects and verifying the predictive ability of t

APA, Harvard, Vancouver, ISO, and other styles

21

Beyer, A., E. Müller, H. Sigg, et al. "Optical and structural analysis of Ge quantum dots embedded in strained Si quantum wells grown on patterned substrates." MRS Proceedings 638 (2000). http://dx.doi.org/10.1557/proc-638-f14.8.1.

Full text

Abstract:

AbstractGermanium quantum dots embedded in silicon have been used in the past to improve the opto-electronic properties of Si based materials. The idea is to overcome the limitation of the indirect band gap of Si by a strong localization of the carriers in quantum dots. However, the Ge quantum dots provide a strong carrier confinement only for the holes, the electrons are only weakly confined in the Si. In this study we embedded the Ge quantum dots in strained Si quantum wells grown on relaxed SiGe buffer layers. The strained Si quantum wells provide a confinement of the electrons in the vicin

APA, Harvard, Vancouver, ISO, and other styles

22

Vial, J.-C., B. Pépin-Donat, A. Viallat, and P. Fedorko. "Carrier Dynamics in Poly(Octylthiophene) Gels." MRS Proceedings 660 (2000). http://dx.doi.org/10.1557/proc-660-jj8.22.

Full text

Abstract:

ABSTRACTCarrier dynamics properties in swollen poly(octylthiophene) gels are investigated via their radiative and non-radiative recombination rates (Wr and Wnr respectively) as a function of their swelling ratio (Q). Photoluminescence decay time (τ, in the picosecond range) and luminescence quantum efficiency (QE) are found to strongly increase with Q. This implies that Wr increases and Wnr decreases as Q increases; such a result cannot be understood if one accounts only for the well-known dilution effect observed for organic dyes. Our interpretation is that the enhanced carrier transport due

APA, Harvard, Vancouver, ISO, and other styles

23

Bagolini, Luigi, Michele Montanari, Luca Persichetti, et al. "Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n-type Ge/SiGe quantum fountains." Physical Review B, May 13, 2020. https://doi.org/10.5281/zenodo.3835794.

Full text

Abstract:

n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si-compatible THz laser. Focusing on this material system, we have developed a numerical model to describe the intersubband carrier dynamics which restores the equilibrium after pulsed optical excitation in asymmetric coupled Ge/SiGe quantum wells. We take into account inelastic and elastic scattering processes and investigate different quantum-well geometries, doping densities and excitation regimes. In this configuration space, we disentangle the effect on the overall dynamics of each scattering

APA, Harvard, Vancouver, ISO, and other styles

24

Cartwright, A. N., Paul M. Sweeney, Thomas Prunty, David P. Bour, and Michael Kneissl. "Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures." MRS Internet Journal of Nitride Semiconductor Research 4, no. 1 (1999). http://dx.doi.org/10.1557/s1092578300000685.

Full text

Abstract:

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

APA, Harvard, Vancouver, ISO, and other styles

25

Li, Hang, Ying Wang, Yingnan Guo, et al. "Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure." Applied Physics Letters 122, no. 17 (2023). http://dx.doi.org/10.1063/5.0152094.

Full text

Abstract:

Exciton dynamics in a GaAsSb/GaAs quantum well (QW) heterostructure were investigated via both steady state and transient photoluminescence. The measurements at 10 K demonstrated the coexistence of localized excitons (LEs) and free excitons (FEs), while a blue-shift resulting from increased excitation intensity indicated their spatially indirect transition (IT) characteristics due to the type-II band alignment. With increasing temperature from 10 K, the LEs and FEs redistribute, with the LEs becoming less intense at relatively higher temperature. With increasing temperature to above 80 K, elec

APA, Harvard, Vancouver, ISO, and other styles

26

Cartwright, Alexander N., M. C.-K. Cheung, F. Shahedipour-Sandvik, et al. "Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED." MRS Proceedings 916 (2006). http://dx.doi.org/10.1557/proc-0916-dd04-10.

Full text

Abstract:

AbstractTime-resolved photoluminescence studies can provide useful information for the development of InGaN/GaN heterostructures for long wavelength visible emitters. In this paper, we present results of time-resolved photoluminescence from samples grown using two different approaches to achieve green emission from InGaN/GaN MQWs. In one approach, samples, with high indium incorporation, were grown on a high quality AlN substrate to achieve green emission. The resulting photoluminescence decay of the green luminescence is long-lived and non-exponential. Quantitative analysis showed that the de

APA, Harvard, Vancouver, ISO, and other styles

27

Zou, Yongjie, Hamidreza Esmaielpour, Daniel Suchet, Jean-François Guillemoles, and Stephen M. Goodnick. "The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells." Scientific Reports 13, no. 1 (2023). http://dx.doi.org/10.1038/s41598-023-32125-2.

Full text

Abstract:

AbstractUnder continuous-wave laser excitation in a lattice-matched In0.53Ga0.47As/In0.8Ga0.2As0.44P0.56 multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm compared with 980 nm excitation, as the injected carrier density increases. Ensemble Monte Carlo simulation of the carrier dynamics in the MQW system shows that this carrier temperature rise is dominated by nonequilibrium LO phonon effects, with the Pauli exclusion having a significant effect at high carrier densities. Further, we find a significant fraction of carriers resid

APA, Harvard, Vancouver, ISO, and other styles

28

Lefebvre, P., J. Allègre, B. Gil, et al. "Time-Resolved Photoluminescence of GaN / Ga0.93Al0 .07N Quantum Wells." MRS Proceedings 482 (1997). http://dx.doi.org/10.1557/proc-482-607.

Full text

Abstract:

AbstractThe recombination dynamics of excitons in GaN / Ga0.93Al0.07N multiple quantum wells is studied versus lattice temperature. The average decay time of photoluminescence measured at 8K is of ∼330 ps, with a substantial variation of times within the emission line. This is interpreted in terms of carrier localization due to alloy disorder and to well width and depth variations. The radiative lifetime τr of excitons in the wells is found to increase linearly with temperature, with ∂τr / ∂T = 20.5 ± 0.7 ps.K−1. The radiative lifetime of free excitons in the low-temperature limit is deduced t

APA, Harvard, Vancouver, ISO, and other styles

29

Morel, Aurelien, Pierre Lefebvre, Thierry Taliercio, et al. "Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems." MRS Proceedings 743 (2002). http://dx.doi.org/10.1557/proc-743-l5.5.

Full text

Abstract:

ABSTRACTRecombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum wells and quantum boxes of various sizes while their decay time varies over several orders of magnitude. To explain these results, we propose an original model for electron-hole pair recombination in these systems, combining the effects of internal electric fields and of carrier localization on a nanometer-scale. These two intricate e

APA, Harvard, Vancouver, ISO, and other styles

30

Brübach, J., J. E. M. Haverkort, J. H. Wolter, P. D. Wang, N. N. Ledentsov, and C. M. Sotomayor Torres. "Exciton Dynamics in Ultrathin InAs/GaAs Quantum-Wells." MRS Proceedings 406 (1995). http://dx.doi.org/10.1557/proc-406-283.

Full text

Abstract:

AbstractWe have studied the transient behaviour of a sharp emission line, which emerges close to the heavy-hole (hh) exciton photoluminescence line in a 1.6 monolayer thick InAs layer embedded in a GaAs matrix, when the light-hole (lh) exciton transition is excited. We find, that the decaytime of the sharp line is equal to the lh-exciton lifetime for excitation on resonance, but it strongly decreases for excitation off resonance. Since in our structure the energy separation between the hhand lh-exciton transitions amount to one GaAs LO phonon we conclude, that the sharp line originates from do

APA, Harvard, Vancouver, ISO, and other styles

31

Cui, Qingyue, Xinmei Liu, Nan Li, et al. "A New Metal‐Free Molecular Perovskite‐Related Single Crystal with Quantum Wire Structure for High‐Performance X‐Ray Detection." Small, November 10, 2023. http://dx.doi.org/10.1002/smll.202308945.

Full text

Abstract:

AbstractThe family of metal‐free molecular perovskites, an emerging novel class of eco‐friendly semiconductor, welcomes a new member with a unique 1D hexagonal perovskite structure. Lowering dimensionality at molecular level is a facile strategy for crystal structure conversion, optoelectronic property regulation, and device performance optimization. Herein, the study reports the design, synthesis, packing structure, and photophysical properties of the 1D metal‐free molecular perovskite‐related single crystal, rac‐3APD‐NH4I3(rac‐3APD= racemic‐3‐Aminopiperidinium), that features a quantum wire

APA, Harvard, Vancouver, ISO, and other styles

32

Dickson, Killian N., Y. Lange Simmons, Amberly F. Ricks, et al. "Impact of mechanically applied strain on Auger recombination in InGaAs multiple quantum wells." Applied Physics Letters 126, no. 3 (2025). https://doi.org/10.1063/5.0244039.

Full text

Abstract:

We present the results of direct measurements of the effect of mechanically applied biaxial strain on Auger recombination rates in InGaAs quantum wells grown on InP. By mounting these structures on a flexible membrane, we applied strain mechanically rather than by changing the quantum well alloy fraction. Specifically, we employed time-resolved photoluminescence spectroscopy to probe the recombination dynamics in the degenerate carrier regime. From these measurements, we extract the non-degenerate cubic Auger coefficient C30. We found that applying 1.59% tensile biaxial strain increased the Au

APA, Harvard, Vancouver, ISO, and other styles

33

Nair, Pradeep R. "Near ideal photoluminescence in perovskites: Excitonic effects and self-consistent back extraction of recombination parameters." Journal of Applied Physics 137, no. 8 (2025). https://doi.org/10.1063/5.0250771.

Full text

Abstract:

Recent reports indicate that perovskite-based light emitting diodes (LEDs) have achieved an external quantum efficiency (EQE) of 32%—rather an internal quantum efficiency close to 100%. Much of this improved performance is attributed to the role of excitons. While the experimental trends are encouraging, the recombination parameters estimated through extensive curve-fitting of photoluminescence transients are often not amenable to reasonable interpretations. In view of the same, through a detailed analysis of free carrier–exciton dynamics in perovskite optoelectronic materials, here we identif

APA, Harvard, Vancouver, ISO, and other styles

34

Khee, Ng Tien, Yoon Soon Fatt, and Fan Weijun. "Analysis of Photoluminescence Efficiency of Annealed GaInNAs Quantum Well Grown by Solid Source Molecular Beam Epitaxy." MRS Proceedings 799 (2003). http://dx.doi.org/10.1557/proc-799-z5.14.

Full text

Abstract:

ABSTRACTThe carrier dynamics of a 7.5 nm GaInNAs quantum well (QW) are studied by photoluminescence (PL) at a low temperature regime of 4 K to 150 K. The PL emission efficiency of the QW is initially evaluated to examine the recombination mechanisms in the QW. A dual-activation-energy model is later found to fit the integrated PL intensity vs. temperature curve better than a single-activation-energy model. The two states that correspond to the above activation energies could have resulted in a much faster PL intensity quenching in the GaInNAs QW as compared to that of a reference GaInAs QW. On

APA, Harvard, Vancouver, ISO, and other styles

35

Chen, Fei, A. N. Cartwright, Paul M. Sweeney, M. C. Cheung, Jeffrey S. Flynn, and David Keogh. "Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells." MRS Proceedings 693 (2001). http://dx.doi.org/10.1557/proc-693-i6.27.1.

Full text

Abstract:

AbstractA comparative study, using time-resolved and CW photoluminescence spectroscopy, of MOVPE grown InGaN/GaN multiple quantum wells deposited on HVPE GaN/Sapphire at different growth temperatures was undertaken. It was found that the PL linewidth increased and the peak emission energy decreased as the growth temperature was reduced. Moreover, the sample grown at an intermediate growth temperature exhibited total integrated luminescence intensity much greater than the samples grown at higher or lower growth temperatures. A phenomenological carrier recombination dynamics model based on the c

APA, Harvard, Vancouver, ISO, and other styles

36

Yapparov, Rinat, Tanay Tak, Jacob Ewing, et al. "Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence." Journal of Applied Physics 136, no. 8 (2024). http://dx.doi.org/10.1063/5.0227663.

Full text

Abstract:

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In

APA, Harvard, Vancouver, ISO, and other styles

37

Tanaka, Shiki, Ryota Ishii, Norman Susilo, et al. "Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions." Japanese Journal of Applied Physics, September 26, 2022. http://dx.doi.org/10.35848/1347-4065/ac94fd.

Full text

Abstract:

Abstract The radiative recombination efficiency (RRE) of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates was investigated by picosecond-laser-excited photoluminescence (PL) spectroscopy under selective and non-selective excitation conditions. The PL efficiency, which was deduced by excitation-power-dependent PL measurements at low temperature (LT) and room temperature (RT), was unity at LT under both excitation conditions; However, at RT, the PL efficiency under non-selective excitation conditions was lower than that under selective excitation conditions. Time-res

APA, Harvard, Vancouver, ISO, and other styles

38

Tosa, Hiroki, Keito Mori-Tamamura, and Atsushi A. YAMAGUCHI. "Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements by utilizing Helmholtz resonance." Japanese Journal of Applied Physics, January 11, 2024. http://dx.doi.org/10.35848/1347-4065/ad1d83.

Full text

Abstract:

Abstract Accurate estimation of internal quantum efficiency (IQE) is essential for a comprehensive understanding of carrier dynamics in light-emitting materials in optical devices. We proposed simultaneous photoacoustic (PA) and photoluminescence (PL) measurements as a method for estimating accurate IQE values. This method detects the heat generated by non-radiative recombination as well as the light generated by radiative recombination. In some cases, however, there is a problem of heat generated outside of the measurement point being mixed into the PA signal. High-frequency measurement reduc

APA, Harvard, Vancouver, ISO, and other styles

39

Kalitukha, I. V., E. Yalcin, O. S. Ken, et al. "Universal magnetic proximity effect in ferromagnet–semiconductor quantum well hybrid structures." Journal of Chemical Physics 159, no. 1 (2023). http://dx.doi.org/10.1063/5.0153310.

Full text

Abstract:

Hybrid ferromagnet–semiconductor systems possess new outstanding properties, which emerge when bringing magnetic and semiconductor materials into contact. In such structures, the long-range magnetic proximity effect couples the spin systems of the ferromagnet and semiconductor on distances exceeding the carrier wave function overlap. The effect is due to the effective p–d exchange interaction of acceptor-bound holes in the quantum well with d-electrons of the ferromagnet. This indirect interaction is established via the phononic Stark effect mediated by the chiral phonons. Here, we demonstrate

APA, Harvard, Vancouver, ISO, and other styles

40

Gholami, M., M. Esmaeili, H. Haratizadeh, P. Holtz, and M. Hammar. "Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy." Opto-Electronics Review 17, no. 3 (2009). http://dx.doi.org/10.2478/s11772-009-0008-9.

Full text

Abstract:

AbstractWe have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half

APA, Harvard, Vancouver, ISO, and other styles

41

Pradhan, Debabrata, and Moumita Chandra. "Engineered Sulfur Vacancies in Z‐scheme ZnS/TiO2 Heterostructure for Dual Photocatalytic Functionality." ChemCatChem, April 21, 2025. https://doi.org/10.1002/cctc.202500395.

Full text

Abstract:

The design of heterojunction semiconductor photocatalysts with well‐aligned band edges is crucial for optimizing charge carrier dynamics in photocatalytic water splitting and organic transformations. Herein, a two‐step solvothermal and wet chemical method is employed to synthesize sulfur vacancy (sv)‐rich ZnS nanowires (NWs) with varying proportions of TiO2 nanoparticles (NPs). Photocatalytic hydrogen evolution study reveals that the optimized sv‐ZT0.3 heterostructure exhibits a remarkable hydrogen evolution of 35.77 mmol g−1 due to the Z‐scheme charge transfer mechanism significantly outperfo

APA, Harvard, Vancouver, ISO, and other styles

42

Song, Xin, Busheng Zhang, Xingting Liu, et al. "Low‐Volatility Fused‐Ring Solid Additive Engineering for Synergistically Elongating Exciton Lifetime and Mitigating Trap Density Toward Organic Solar Cells of 20.5% Efficiency." Advanced Materials, February 12, 2025. https://doi.org/10.1002/adma.202418393.

Full text

Abstract:

AbstractVolatile solid additives (VSAs) with single or fused‐ring structures have attracted much attention for enhancing power conversion efficiencies (PCEs) of organic solar cells (OSCs). While the working mechanisms of high‐volatility single‐ring additives have been well studied, the influence of low‐volatility fused‐ring VSAs on molecular aggregations and exciton/carrier dynamics remains still unclear. Herein, 3,6‐dibromothieno[3,2‐b]thiophene (3,6TTBr) is selected as a representative low‐volatility fused‐ring VSA to elucidate its working mechanism. Via the theoretical and experimental join

APA, Harvard, Vancouver, ISO, and other styles

43

Kim, Hobeom, Jung‐Min Heo, Christoph Wolf, et al. "Efficient Polycrystalline Single‐Cation Perovskite Light‐Emitting Diodes by Simultaneous Intracrystal and Interfacial Defect Passivation." Small, September 25, 2024. http://dx.doi.org/10.1002/smll.202405272.

Full text

Abstract:

AbstractPolycrystalline perovskite light‐emitting diodes (PeLEDs) have shown great promise with high efficiency and easy processability. However, PeLEDs using single‐cation polycrystalline perovskite emitters have demonstrated low efficiency due to defects within the grains and at the interfaces between the perovskite layer and the charge injection contact. Thus, simultaneous defect engineering of perovskites to suppress exciton loss within the grains and at the interfaces is crucial for achieving high efficiency in PeLEDs. Here, 1,8‐octanedithiol which is a strong nucleophile, is used to incr

APA, Harvard, Vancouver, ISO, and other styles

44

Nag, Dhiman, S. Bhunia, Ritam Sarkar, Soumyadip Chatterjee, and Apurba Laha. "Investigating defects in InGaN based optoelectronics: from material and device perspective." Materials Research Express, January 30, 2023. http://dx.doi.org/10.1088/2053-1591/acb759.

Full text

Abstract:

Abstract III-nitride optoelectronics have revolutionized solid-state lighting technology. However, non-radiative defects play a major bottleneck in determining the performance of InGaN-based optoelectronics devices. It becomes especially challenging when high indium is required to be incorporated to obtain emission at higher wavelength (>500 nm). In this review article, we are going to discuss our investigation on the origin of defects in InGaN-based optoelectronics devices from the material and device perspective and characterize them through various techniques. This article broadly consis

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!