Relevant bibliographies by topics / SiGe, Segregation

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'SiGe, Segregation'

Author: Grafiati
Published: 4 June 2021
Last updated: 16 February 2022

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Journal articles on the topic "SiGe, Segregation"

1

Tarus, J., M. Tantarimäki, and K. Nordlund. "Segregation in SiGe clusters." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 228, no. 1-4 (January 2005): 51–56. http://dx.doi.org/10.1016/j.nimb.2004.10.022.

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Nützel, J. F., M. Holzmann, P. Schittenhelm, and G. Abstreiter. "Segregation of n-dopants on SiGe surfaces." Applied Surface Science 102 (August 1996): 98–101. http://dx.doi.org/10.1016/0169-4332(96)00029-3.

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Bergamaschini, Roberto, Rianne C. Plantenga, Marco Albani, Emilio Scalise, Yizhen Ren, Håkon Ikaros T. Hauge, Sebastian Kölling, et al. "Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP–Si–SiGe nanowires by controlled faceting." Nanoscale 13, no. 20 (2021): 9436–45. http://dx.doi.org/10.1039/d0nr08051a.

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Goeller, Peter T., Boyan I. Boyanov, Dale E. Sayers, Robert J. Nemanich, Alline F. Myers, and Eric B. Steel. "Germanium segregation in the Co/SiGe/Si(001) thin film system." Journal of Materials Research 14, no. 11 (November 1999): 4372–84. http://dx.doi.org/10.1557/jmr.1999.0592.

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Cobalt disilicide contacts to silicon–germanium alloys were formed by direct deposition of pure cobalt metal onto silicon–germanium films on Si(001) substrates. Segregation of germanium was observed during the reaction of the cobalt with the silicon–germanium alloy. The nature of the Ge segregation was studied by transmission electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. In the case of cobalt films deposited onto strained silicon–germanium films, the Ge segregation was discovered to be in the form of Ge-enriched Si1−xGex regions found at the surface of the film surrounding CoSi and CoSi2 grains. In the case of cobalt films deposited onto relaxed silicon–germanium films, the Ge segregation was dependent on formation of CoSi2. In samples annealed below 800 °C, where CoSi was the dominant silicide phase, the Ge segregation was similar in form to the strained Si1−xGex case. In samples annealed above 800 °C, where CoSi2 was the dominant silicide phase, the Ge segregation was also in the form of tetrahedron-shaped, Ge-enriched, silicon–germanium precipitates, which formed at the substrate/silicon– germanium film interface and grew into the Si substrate. A possible mechanism for the formation of these precipitates is presented based on vacancy generation during the silicidation reaction coupled with an increased driving force for Ge diffusion due to silicon depletion in the alloy layer.
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Weizman, M., N. H. Nickel, I. Sieber, W. Bohne, J. Röhrich, E. Strub, and B. Yan. "Phase segregation in laser crystallized polycrystalline SiGe thin films." Thin Solid Films 487, no. 1-2 (September 2005): 72–76. http://dx.doi.org/10.1016/j.tsf.2005.01.038.

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Weizman, M., N. H. Nickel, I. Sieber, and B. Yan. "Successive segregation in laser-crystallized poly-SiGe thin films." Journal of Non-Crystalline Solids 352, no. 9-20 (June 2006): 1259–62. http://dx.doi.org/10.1016/j.jnoncrysol.2005.10.059.

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Twesten, R. D., J. A. Floro, and E. Chasonf. "Ge distribution in Gi80Ge20 Islands Grown in the High Mobility Regime." Microscopy and Microanalysis 4, S2 (July 1998): 662–63. http://dx.doi.org/10.1017/s1431927600023436.

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Strained epitaxial films are often unstable to morphological transformations. The classic example of this phenomenon is the SiGe system. A nonplanar morphology results in non-uniform strains in the system (Figure 1). These strain fields can modify the local chemical potential of a uniform alloy driving Ge enrichment in the regions of low compression.Recent work has shown that annealed films of SiGe on Si{001} exhibit both vertical and lateral segregation during the transition from a metastable planar film to an array of ﹛100﹜ directed island. Vertical segregation is evidenced by an enrichment of Ge in the last few monolayers of the film while lateral segregation is seen as an enhancement of this surface layer in the region near the island peaks. This segregation is due to surface diffusion as the bulk diffusion lengths are too short. The case of annealed, metastable films can be compared to growing films.
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Jernigan, Glenn G., Phillip E. Thompson, and Conrad L. Silvestre. "Quantitative measurements of Ge surface segregation during SiGe alloy growth." Surface Science 380, no. 2-3 (May 1997): 417–26. http://dx.doi.org/10.1016/s0039-6028(97)00036-8.

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Nakagawa, Kiyokazu, Nobuyuki Sugii, Shinya Yamaguchi, and Masanobu Miyao. "Ge concentration dependence of Sb surface segregation during SiGe MBE." Journal of Crystal Growth 201-202 (May 1999): 560–63. http://dx.doi.org/10.1016/s0022-0248(98)01389-x.

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Drozdov, M. N., A. V. Novikov, and D. V. Yurasov. "Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy." Semiconductors 47, no. 11 (November 2013): 1481–84. http://dx.doi.org/10.1134/s1063782613110079.

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Dissertations / Theses on the topic "SiGe, Segregation"

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Chen, Peixuan. "Thermal transport through SiGe superlattices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-159170.

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Understanding thermal transport in nanoscale is important for developing nanostructured thermolelectric materials and for heat management in nanoelectronic devices. This dissertation is devoted to understand thermal transport through SiGe based superlattices. First, we systematically studied the cross-plane thermal conductivity of SiGe superlattices by varying the thickness of Si(Ge) spacers thickness. The observed additive character of thermal resistance of the SiGe nanodot/planar layers allows us to engineer the thermal conductivity by varying the interface distance down to ~1.5 nm. Si-Ge intermixing driven by Ge surface segregation is crucial for achieving highly diffusive phonon scattering at the interfaces. By comparing the thermal conductivity of nanodot Ge/Si superlattices with variable nanodot density and superlattices with only wetting layers, we find that the effect of nanodots is comparable with that produced by planar wetting layers. This is attributed to the shallow morphology and further flattening of SiGe nanodots during overgrowth with Si. Finally, the experiments show that the interface effect on phonon transport can be weakened and even eliminated by reducing the interface distance or by enhancing Si-Ge intermixing around the interfaces by post-growth annealing. The results presented in this dissertation are expected to be relevant to applications requiring optimization of thermal transport for heat management and for the development of thermoelectric materials and devices based on superlattice structures
Verständnis des thermischen Transport auf Nanoskala ist sowohl grundlegend für die Entwicklung nanostrukturierter Materialien, als auch für Temperaturkontrolle in nanoelektronischen Bauteilen. Diese Dissertation widmet sich der Erforschung des thermischen Transports durch SiGe basierenden Übergittern. Variationen, der Si(Ge) Schichtdicken, wurden zur systematischen Untersuchung der Normalkomponente zur Wachstumsrichtung der Wärmeleitfähigkeit, von SiGe Übergittern, genutzt. Die Beobachtung des additiven Charakters, des thermischen Widerstands, der SiGe Schichten, mit oder ohne Inselwachstum, ermöglicht die Erstellung von Strukturen mit bestimmter Wärmeleitfähigkeiten durch die Variation der Schichtdicken bis zu einer Minimaldistanz zweier Schichtübergänge von ~1.5nm. Die Ge Segregation führt zu einer Vermischung, von Si und Ge, welche eine essentielle Rolle zur diffusen Phononenstreuung spielt. Unsere Untersuchungen, von planaren Übergittern und Übergittern mit variabler Inseldichte, zeigen, dass Inseln und planare Schichten zu einer vergleichbaren Reduktion, der Wärmeleitfähigkeit, führen. Diese Beobachtung lässt sich, sowohl auf die flache Morphologie als auch die Abplattung der SiGe Inseln, aufgrund der Überwachsung mit Si, zurückführen. Die Experimente zeigen außerdem, dass sich der Barriereneffekt, der Schichtgrenzen, durch Reduktion der Schichtabstände und durch verstärkte Vermischung im Bereich der Schichtgrenzen, durch Erhitzung, eliminieren lässt. Die präsentierten Messungen sind sowohl, für die Entwicklung jener Bauteile, die eine Optimierung des thermischen Transports oder Temperaturmanagment erfordern, als auch von thermoelektrischen Matieralien und Bauteilen, basierend auf Übergittern, relevant
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Chen, Peixuan. "Thermal transport through SiGe superlattices." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20177.

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Understanding thermal transport in nanoscale is important for developing nanostructured thermolelectric materials and for heat management in nanoelectronic devices. This dissertation is devoted to understand thermal transport through SiGe based superlattices. First, we systematically studied the cross-plane thermal conductivity of SiGe superlattices by varying the thickness of Si(Ge) spacers thickness. The observed additive character of thermal resistance of the SiGe nanodot/planar layers allows us to engineer the thermal conductivity by varying the interface distance down to ~1.5 nm. Si-Ge intermixing driven by Ge surface segregation is crucial for achieving highly diffusive phonon scattering at the interfaces. By comparing the thermal conductivity of nanodot Ge/Si superlattices with variable nanodot density and superlattices with only wetting layers, we find that the effect of nanodots is comparable with that produced by planar wetting layers. This is attributed to the shallow morphology and further flattening of SiGe nanodots during overgrowth with Si. Finally, the experiments show that the interface effect on phonon transport can be weakened and even eliminated by reducing the interface distance or by enhancing Si-Ge intermixing around the interfaces by post-growth annealing. The results presented in this dissertation are expected to be relevant to applications requiring optimization of thermal transport for heat management and for the development of thermoelectric materials and devices based on superlattice structures.
Verständnis des thermischen Transport auf Nanoskala ist sowohl grundlegend für die Entwicklung nanostrukturierter Materialien, als auch für Temperaturkontrolle in nanoelektronischen Bauteilen. Diese Dissertation widmet sich der Erforschung des thermischen Transports durch SiGe basierenden Übergittern. Variationen, der Si(Ge) Schichtdicken, wurden zur systematischen Untersuchung der Normalkomponente zur Wachstumsrichtung der Wärmeleitfähigkeit, von SiGe Übergittern, genutzt. Die Beobachtung des additiven Charakters, des thermischen Widerstands, der SiGe Schichten, mit oder ohne Inselwachstum, ermöglicht die Erstellung von Strukturen mit bestimmter Wärmeleitfähigkeiten durch die Variation der Schichtdicken bis zu einer Minimaldistanz zweier Schichtübergänge von ~1.5nm. Die Ge Segregation führt zu einer Vermischung, von Si und Ge, welche eine essentielle Rolle zur diffusen Phononenstreuung spielt. Unsere Untersuchungen, von planaren Übergittern und Übergittern mit variabler Inseldichte, zeigen, dass Inseln und planare Schichten zu einer vergleichbaren Reduktion, der Wärmeleitfähigkeit, führen. Diese Beobachtung lässt sich, sowohl auf die flache Morphologie als auch die Abplattung der SiGe Inseln, aufgrund der Überwachsung mit Si, zurückführen. Die Experimente zeigen außerdem, dass sich der Barriereneffekt, der Schichtgrenzen, durch Reduktion der Schichtabstände und durch verstärkte Vermischung im Bereich der Schichtgrenzen, durch Erhitzung, eliminieren lässt. Die präsentierten Messungen sind sowohl, für die Entwicklung jener Bauteile, die eine Optimierung des thermischen Transports oder Temperaturmanagment erfordern, als auch von thermoelektrischen Matieralien und Bauteilen, basierend auf Übergittern, relevant.
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Gajjar, Parmesh. "Modelling size-segregation in dense granular flows." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/modelling-sizesegregation-in-dense-granular-flows(2378b72f-6fe6-4464-8d40-c77915d42444).html.

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Dense flows of grains are commonplace throughout natural and industrial environments, from snow-avalanches down the sides of mountains to flows of cereal down chutes as it is transported from one part of a factory to another. A ubiquitous feature in all of these flows is their ability to separate the different grain types when shaken, stirred, sheared or vibrated. Many flows are sheared through gravity and these flows are particularly efficient at segregating particles based on their size, with small particles percolating to the bottom of the flow and large particles collecting at the top. Within this mechanism, an asymmetry between the large and small particles has been observed, with small particles percolating downwards through many large particles at a faster rate than large particles rise upwards through many small particles. This alternative format thesis presents a revised continuum model for segregation of a bidisperse mixture that can account for this asymmetry. A general class of asymmetric segregation flux functions is introduced that gives rise to asymmetric velocities between the large and small grains. Exact solutions for segregation down an inclined chute, with homogenous and normally graded inflow conditions, show that the asymmetry can significantly enhance the distance for complete segregation. Experiments performed using a classical shear-box with refractive index matched scanning are able to quantify the asymmetry between large and small particles on both bulk and particle scales. The dynamics of a single small particle indicate that it not only falls down faster than a single large particle rises, but that it also exhibits a step-like motion compared to the smooth ascent of the large grain. This points towards an underlying asymmetry between the different sized constituents. The relationship between the segregation-time and the volume fraction of small grains is analysed, and solutions presented for the steady-state balance between segregation and diffusive remixing. These help to show the good agreement between the asymmetric model and experimental data. Segregation at the front of natural avalanches produces a recirculation zone, known as a `breaking size-segregation wave', in which large particles are initially segregated upwards, sheared towards the front of the flow, and overrun before being resegregated again. Solutions for the structure of this recirculation zone are derived using the asymmetric flux model, revealing a novel `lens-tail' structure. Critically, it is seen that a few large particles starting close to the bottom of the flow are swept a long way upstream and take a very long time to recirculate. The breaking size-segregation waves highlight the important interplay between segregation and the bulk velocity field. The properties of flowing monodisperse grains are explored through experiments on a cone that produce a beautiful radial fingering pattern. Equations developed in a conical coordinate system reproduce the measured linear relationship between fingering radius and initial flux, whilst also predicting the slowing and thinning dynamics of the flow. Overall, these results illustrate the complex nature of the granular rheology and provide perspectives for future modelling of segregation in dense granular flows.
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Mukahhal, Alaa. "Examining the impact of residential segregation on rapid transit development in Chicago's South Side." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/111417.

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Thesis: M.C.P., Massachusetts Institute of Technology, Department of Urban Studies and Planning, 2017.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 61-66).
The striking contrast between two Chicago neighborhoods Hyde Park and Englewood which exist side by side is a prime example of what Edward Soja calls socially produced geographies of institutionalized racial segregation and what David Harvey terms as territorial injustice. Hyde Park with about 26,705 mostly white residents is a thriving economic center that has realized gains in property values and commercial investment. Nearby Woodlawn and Englewood have experienced declining populations, lower densities, lower property values, and increased vacancies that border Hyde Park, creating clear spatial lines of uneven development. Englewood and Woodlawn have one asset that Hyde Park does not: two public transit rail lines, the Green Line and the Red Line. In this thesis, I ask the question, can rapid transit be used to challenge uneven development and segregation in low income communities? I argue that public transit does not create growth, it merely redistributes it, and without the necessary development preconditions, the maximized benefits of public rapid transit in segregated communities will be hindered by persistent racial and residential segregation. I provide evidence to support that unless there is an intentional effort in conjunction with the proposed Red Line Extension to minimize residential and economic segregation, the expected benefits of transit-oriented development and economic revitalization in Chicago's African-American neighborhoods will be greatly limited. Such a plan might include developing transit stations into economic anchors through public and private partnerships, creating a coalition of community partnerships to develop land use plans that respond to the needs of the neighborhood, and working to secure investment for rapid transit infrastructure alongside investment for economic development.
by Alaa Mukahhal.
M.C.P.
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Daubriac, Richard. "Caractérisation de techniques d'implantations ioniques alternatives pour l'optimisation du module source-drain de la technologie FDSOI 28nm." Thesis, Toulouse, INSA, 2018. http://www.theses.fr/2018ISAT0031/document.

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Durant ces dernières années, l’apparition de nouvelles architectures (FDSOI, FinFETs ou NW-FETs) et l’utilisation de nouveaux matériaux (notamment SiGe) ont permis de repousser les limites des performances des dispositifs MOS et de contourner l’effet canal court inhérent à la miniaturisation des composants. Cependant, pour toutes ces nouvelles architectures, la résistance de contact se dégrade au fil des nœuds technologiques. Celle-ci dépend fortement de deux paramètres physiques : la concentration de dopants actifs proches de la surface du semi-conducteur et de la hauteur de barrière Schottky du contact siliciuré. De multiples procédés avancés ont été proposé pour améliorer ces deux paramètres physiques (pré-amorphisation, recuit laser, ségrégation de dopants, etc…). Afin d’optimiser les conditions expérimentales de ces nouvelles techniques de fabrication, il est primordial de pouvoir caractériser avec fiabilité leur impact sur les deux grandeurs physiques citées. Dans le cadre de cette thèse, deux thématiques dédiées à l’étude de chacun des paramètres sont abordées, explicitant les méthodes de caractérisation développées ainsi que des exemples concrets d’applications. La première partie concerne l’étude de la concentration de dopants actifs proches de la surface du semi-conducteur. Dans cet axe, nous avons mis en place une méthode d’Effet Hall Différentiel (DHE). Cette technique combine gravures successives et mesures par effet Hall conventionnel afin d’obtenir le profil de concentration de dopants actifs en fonction de la profondeur. Nous avons développé et validé une méthode de gravure chimique et de mesure électrique pour des couches ultra-minces de SiGe et de Si dopées. Les profils de concentration générés ont une résolution en profondeur inférieure à 1 nm et ont permis d’étudier de façon approfondie dans les premiers nanomètres proches de la surface de couches fabriquées grâce à des techniques d’implantation et de recuit avancées comme par exemple, la croissance en phase solide activée par recuit laser. La deuxième partie porte sur la mesure de hauteurs de barrière Schottky pour des contacts siliciurés. Durant cette étude, nous avons transféré une technique se basant sur des diodes en tête bêche pour caractériser l’impact de la ségrégation de différentes espèces à l’interface siliciure/semi-conducteur sur la hauteur de barrière Schottky d’un contact en siliciure de platine. Cette méthode de mesure associée à des simulations physiques a permis d’une part, d’extrairer avec fiabilité des hauteurs de barrières avec une précision de 10meV et d’autre part, d’effectuer une sélection des meilleures conditions de ségrégation de dopants pour la réduction de la hauteur de barrière Schottky. Pour conclure, ce projet a rendu possible le développement de méthodes de caractérisation pour l’étude de matériaux utilisés en nanoélectronique. De plus, nous avons pu apporter des éclaircissements concernant l’impact de techniques d’implantation ionique alternatives sur des couches de Si et SiGe ultrafines, et ce, dans le but de réduire la résistance de contact entre siliciure et semi-conducteur dans le module source-drain de transistors ultimes
During the past few decades, the emergence of new architectures (FDSOI, FinFETs or NW-FETs) and the use of new materials (like silicon/germanium alloys) allowed to go further in MOS devices scaling by solving short channel effect issues. However, new architectures suffer from contact resistance degradation with size reduction. This resistance strongly depends on two parameters: the active dopant concentration close to the semi-conductor surface and the Schottky barrier height of the silicide contact. Many solutions have been proposed to improve both of these physical parameters: pre-amorphisation, laser annealing, dopant segregation and others. In order to optimize the experimental conditions of these fabrication techniques, it is mandatory to measure precisely and reliably their impact on cited parameters.Within the scope of this thesis, two parts are dedicated to each lever of the contact resistance, each time precising the developed characterization method and concrete application studies. The first part concerns the study of the active dopant concentration close to the semi-conductor surface. In this axis, we developed a Differential Hall Effet method (DHE) which can provide accurate depth profiles of active dopant concentration combining successive etching processes and conventional Hall Effect measurements. To do so, we validated layer chemical etching and precise electrical characterization method for doped Si and SiGe. Obtained generated profiles have a sub-1nm resolution and allowed to scan the first few nanometers of layers fabricated by advanced ion implantation and annealing techniques, like solid-phase epitaxy regrowth activated by laser annealing. In the second part, we focused on the measurement of Schottky barrier height of platinum silicide contact. We transferred a characterization method based on back-to-back diodes structure to measure platinum silicide contacts with different dopant segregation conditions. The electrical measurements were then fitted with physical models to extract Schottky barrier height with a precision of about 10meV. This combination between measurements and simulations allowed to point out the best ion implantation and annealing conditions for Schottky barrier height reduction.To conclude, thanks to this project, we developed highly sensitive characterization methods for nanoelectronics application. Moreover, we brought several clarifications on the impact of alternative ion implantation and annealing processes on Si and SiGe ultra-thin layers in the perspective of contact resistance reduction in FDSOI source-drain module
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Dick, Eva. "Residential segregation - stumbling block or stepping stone? a case study on the Mexican population of the West Side of St. Paul, Minnesota, USA." Wien Zürich Berlin Münster Lit, 2007. http://d-nb.info/987523406/04.

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Owens, Timothy Christopher Olsen Erik K. "Life on the other side of the street a study of the causes and socioeconomic consequences of intra-metropolitan migration and racial residential segregation in Kansas City /." Diss., UMK access, 2007.

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Thesis (M.A.)--Dept. of Economics. University of Missouri--Kansas City, 2007.
"A thesis in economics." Typescript. Advisor: Erik Olsen. Vita. Title from "catalog record" of the print edition Description based on contents viewed Dec. 18, 2007. Includes bibliographical references (leaves 142-148). Online version of the print edition.
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Suvar, Erdal. "SiGeC Heterojunction Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674.

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Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.

Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow.

Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers.

The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed.

SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed.

Key words:Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.

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Bayandorian, Iman. "Magnesium alloy strip produced by a melt-conditioned twin roll casting process." Thesis, Brunel University, 2010. http://bura.brunel.ac.uk/handle/2438/4506.

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Twin roll casting (TRC) offers a promising route for the economic production of Mg sheet, but unfortunately, it produces strip with coarse and non-uniform microstructures and severe centre line segregation. Recently, a novel magnesium strip casting process termed melt conditioned twin roll casting (MC-TRC) was developed that, compared with the conventional TRC process, emphasizes solidification control at the casting stage rather than hot rolling. This was achieved by melt conditioning under intensive forced convection prior to twin roll casting resulting in enhanced heterogeneous nucleation followed by equiaxed growth. In this study the development of TRC and MC-TRC processes and a microstructural comparison of the MC-TRC Mg-alloy strip with that of conventional TRC strip, have been investigated. Emphasis has been focused on the solidification behaviour of the intensively sheared liquid metal, and on the mechanisms for microstructural refinement and compositional uniformity in the MCTRC process. The results of the process development indicate that the MC-TRC process reduces considerably or eliminates defects such as the centre line segregation, voids and cracks at or near the strip surface that are always present in conventional TRC strip. The newly-designed homogenization treatment investigated for TRC and MC-TRC magnesium alloy strips was based on microstructural evolution obtained during heat treatment. The results of the MC-TRC strips showed a much faster recrystallization rate with finer recrystallized grains, which are due to more homogeneous and a finer grain size of the as-cast MC-TRC strips compared with the as-cast TRC strips. During down-stream processing, the effects of MC-TRC process on microstructural evolution of hot-rolled magnesium strips have been understood thoroughly by accurate control of the hot-rolling procedure during each step of strip thickness reduction. This study indicates that the MC-TRC strip requires fewer rolling steps when compared to TRC strip, thus offering reduced processing cost and carbon footprint. Mechanical properties at room temperature of MC-TRC as-cast and rolled sheets are much improved when compared with the conventional TRC as-cast and rolled sheets which can result in a higher quality of final components. The mechanical properties at elevated temperature shows for the first time that the higher elongation and lower yield strength of MC-TRC as-cast strips at a temperature close to its optimised hot-rolling temperature results in better ability for rolling and higher ductility of MC-TRC Mg strip compared with the TRC Mg strip.
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Chassagne, Rémi. "Discrete and continuum modelling of grain size segregation : application to bedload transport." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALU021.

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La compréhension du tri granulométrique des particules est un enjeu majeur pour l’étude des évolutions morphologiques des rivières de montagne. La prédiction des flux de transport reste difficile avec des écarts de plusieurs ordres de grandeurs entre les valeurs prédites et mesurées. L’une des raisons principales de cette difficulté est la ségrégation, phénomène granulaire de tri granulométrique des particules constituant le lit sédimentaire. La ségrégation est donc un phénomène à l’échelle du grain ayant un impact à l’échelle morphologique.Cette thèse présente une étude numérique de la ségrégation en tant que phénomène granulaire dans le cas du charriage et son impact sur le transport sédimentaire. Un modèle aux éléments discrets (DEM) couplé à un modèle fluide turbulent unidimensionnel est utilisé. A l’instant initial, des petites particules sont déposées au dessus de particules plus grosses. Le fluide s’écoule par gravité et transporte les particules du lit sédimentaire. Cette configuration, proche d’un lit érodable, est caractérisée dans la profondeur par des profils exponentiellement décroissant de la vitesse particulaire, du taux de cisaillement et du nombre inertiel et présente une phénoménologie de ségrégation particulière. Les petites particules s’infiltrent en couche, sous forme d’onde progressive, dont la vitesse est contrôlée par le nombre inertiel en bas de la couche. On observe aussi que la vitesse de ségrégation est dépendante de la concentration locale en petites particules et du ratio de taille. Le problème de ségrégation est ensuite analysé à partir d’un modèle d’advection-diffusion. Avec un coefficient d’advection proportionnel au nombre inertiel, le modèle continu reproduit parfaitement la dynamique de la phase des petites particules. Enfin on démontre que pour reproduire l’onde progressive observée dans les simulations DEM, le coefficient de diffusion doit avoir la même dépendance avec le nombre inertiel que le coefficient d’advection.Très récemment, un nouveau modèle d’advection-diffusion a été proposé dans la littérature à partir de forces inter-particulaires, notamment une force de portance (ou force de ségrégation) et de traînée, apportant de nouvelles paramétrisations physiques aux coefficients d’advection et de diffusion. Ce nouveau modèle est analysé ici dans la configuration du charriage. La dépendance en nombre inertiel, observée dans les résultats DEM, peut être retrouvée à partir de ces nouvelles paramétrisations. Pour reproduire quantitativement les simulations DEM, de nouvelles dépendances en nombre inertiel et concentration en petites particules sont proposées pour la force de ségrégation et le coefficient de traînée.Enfin, l’impact de la ségrégation sur le transport sédimentaire est étudié en s’intéressant à la mobilité d’un lit bi-disperse déjà ségrégé. Les grosses particules sont placées au dessus des petites et on observe que, pour la même contrainte fluide et pour le même état granulaire de surface, le transport est plus élevé dans le cas bi-disperse que dans le cas mono-disperse. Pour la gamme de ratio de taille étudié (r<4), on montre que l’augmentation de mobilité n’est pas un effet de rugosité mais un effet rhéologique. À partir d’une analyse dans le cadre de la rhéologie mu(I), il est démontré que les petites particules en profondeur sont plus mobiles que les grosses particules, jouant le rôle d’un tapis roulant pour les grosses particules de surface et augmentant ainsi la mobilité globale du lit sédimentaire. Basé sur des arguments rhéologiques, un modèle simple de prédiction de l’augmentation du flux sédimentaire est proposé, reproduisant correctement les résultats DEM pour une large gamme de nombre de Shields et pour des ratio de taille inférieurs à 4. Les résultats du modèle sont exploités pour identifier quatre régimes de transport différent selon les mécanismes responsables de la mobilité des petites particules
Understanding particle size segregation is one of the great challenge in fluvial geomorphology. It is still notoriously difficult to predict sediment transport more accurately than within one order of magnitude. One of the main origin of this difficulty is particle size segregation, a granular process of particle sorting in the sediment bed. Size segregation is therefore a grain scale process impacting the morphological scale.This PhD presents a numerical study of size segregation as a granular process during bedload transport. A coupled fluid discrete element method (DEM) is used to study the infiltration of small particles in a large particle bed. This configuration, close to granular flows on erodible beds, is characterized by a particle velocity profile, a shear rate profile and an inertial number profile exponentially decreasing into the bed. It presents a particular segregation phenomenology with small particles infiltrating the bed as a travelling wave, the velocity being controlled by the inertial number at the bottom of the layer. The segregation velocity is observed dependent on the local small particle concentrations and on the size ratio. The segregation problem is also analyzed with an advection diffusion model. With advection and diffusion coefficients both proportional to the inertial number, the continuum model perfectly reproduces the dynamics observed in the DEM results.Very recently, a new segregation advection diffusion model has been derived based on particle scale forces, in particular a granular buoyancy force (or segregation force) and an inter-particle drag force. This provides new physically based parametrisations for the advection and diffusion coefficients. This new model is analysed in the bedload configuration, and reproduces qualitatively the DEM results. To improve the model, new dependencies on the inertial number and small particle concentration are proposed for the segregation and drag forces.Finally, the impact of size segregation on sediment transport is studied through the mobility of bidisperse already segregated particle beds. Large particles are placed above small ones, and it is observed that, in the same fluid and surface bed conditions, the transport rate is higher in the bidisperse configuration than in the monodisperse one. For the range of studied size ratio (r<4), it is showed that it is not a rugosity but a granular effect. This is analyzed within the framework of the mu(I) rheology and it is demonstrated that the buried small particles are more mobile than larger particles and play the role of a conveyor belt for the large particles at the surface. Based on rheological arguments, a simple predictive model for the additional transport in the bidisperse case is proposed, which reproduces quite well the DEM results for a large range of Shields numbers and for size ratios smaller than 4. The results of the model were used to identify four different transport regimes of bidisperse mixtures, depending on the mechanisms responsible for the mobility of the small particles.This work represents an important improvement in the understanding of size segregation during bedload transport and questions our understanding of bidisperse granular media, which have not been much studied. It also represents a first step in an upscaling process towards the morphological scale through continuum models
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Books on the topic "SiGe, Segregation"

1

Clotfelter, Charles T. Public school segregation in metropolitan areas. Cambridge, MA: National Bureau of Economic Research, 1998.

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Poston, Ted. The dark side of Hopkinsville: Stories. Athens: University of Georgia Press, 1991.

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Ananat, Elizabeth Oltmans. The wrong side(s) of the tracks: Estimating the causal effects of racial segregation on city outcomes. Cambridge, Mass: National Bureau of Economic Research, 2007.

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Ananat, Elizabeth Oltmans. The wrong side(s) of the tracks estimating the causal effects of racial segregation on city outcomes. Cambridge, MA: National Bureau of Economic Research, 2007.

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Moore, Natalie Y. South Side: A Portrait of Chicago and American Segregation. St. Martin's Press, 2016.

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Moore, Natalie Y., and Allyson Johnson. The South Side: A Portrait of Chicago and American Segregation. Tantor Audio, 2016.

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The South Side: A Portrait of Chicago and American Segregation. Picador, 2017.

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The South Side: A portrait of Chicago and American segregation. St. Martin's Press, 2016.

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Geographies of Difference: The Social Production of the East Side, West Side, and Central City School (Intersections in Communications and Culture: Global ... and Transdisciplinary Perspectives). Peter Lang Publishing, 2006.

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Bronstein, Daniel. Segregation, Exclusion, and the Chinese Communities in Georgia, 1880s-1940. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252037832.003.0005.

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This chapter examines the impact of various state apparatuses, including exclusion laws, on the little remarked but fascinating Chinese American merchant communities in Atlanta, Augusta, and Savannah, Georgia. Federal Chinese Exclusion laws established a highly selective exemption system designed to prevent most Chinese from entering and reentering the United States. The law explicitly barred the first-time entry of laborers but allowed Chinese to come over as merchants, students, government officials, teachers, and U.S.-born citizens. Since most Chinese in Augusta were in the grocery business, they were allowed to travel under the exempted merchant category and their wives and children as merchant dependents. As such, Augusta's Chinese community grew in size and became one of the largest Chinese communities in the South before 1965.
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Book chapters on the topic "SiGe, Segregation"

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Gilliam, J. F., and D. F. Fraser. "Resource Depletion and Habitat Segregation by Competitors Under Predation Hazard." In Size-Structured Populations, 173–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-74001-5_12.

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Sherratt, David J., Lidia K. Arciszewska, Garry Blakely, Sean Colloms, Karen Grant, Nick Leslie, and Richard McCulloch. "Site-specific recombination and circular chromosome segregation." In DNA Repair and Recombination, 33–38. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0537-8_5.

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Sherratt, D. J. "Site-Specific Recombination and the Segregation of Circular Chromosomes." In Nucleic Acids and Molecular Biology, 202–16. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-77950-3_12.

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Kaspar, Andrea, and Stefan Leimgruber. "Raus aus der Isolation durch soziale Integration Arbeitsfeld Tagesstruktur und Soziale Integration." In Soziale Arbeit und Sucht, 127–42. Wiesbaden: Springer Fachmedien Wiesbaden, 2020. http://dx.doi.org/10.1007/978-3-658-31994-6_8.

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ZusammenfassungDer Treffpunkt Azzurro in Bern wurde 2000 mit dem Ziel eröffnet, einen bedeutenden Beitrag zur sozialen Integration und zur Stabilisierung der psychosozialen Gesundheit von suchtgefährdeten und/oder desintegrierten Personen zu leisten. Mittels verschiedener Angebote soll zudem die Durchmischung aller Bevölkerungsschichten gefördert und der Entmischung (Segregation) von unterschiedlichen Personengruppen (religiösen, ethnischen, etc.) entgegengewirkt werden. Träger dieses Angebotes ist das Blaue Kreuz Bern‐Solothurn‐Freiburg, eine Organisation in der Suchthilfe, spezialisiert im Bereich Alkohol. Sie ist tätig in der Prävention/Gesundheitsförderung, Beratung/Therapie und Integration und ist politisch und konfessionell unabhäng.
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Watanabe, Masashi. "Atomic-Level Characterization of Grain-Boundary Segregation and Elemental Site-Location in Ni-Base Superalloy by Aberration-Corrected Scanning Transmission Electron Microscopy." In Superalloy 718 and Derivatives, 718–23. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118495223.ch55.

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Chilukuri, Lokesh Kumar, Sathish Kumar Vasa, and Akhter Ali Mohd. "The Hierarchical Segregation of Groundwater Potential Zones Using Weighted Overlay Technique for the Discernment of Site Suitable Artificial Recharge Structures in the Development of Avunoor Watershed​." In Sustainable Climate Action and Water Management, 73–86. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8237-0_6.

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Xia, Guangrui (Maggie), and Yuanwei Dong. "Si–Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe- and SiGe:C-Based Devices." In Micro- and Nanoelectronics, 21–49. CRC Press, 2017. http://dx.doi.org/10.1201/b17597-2.

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"Living on the Wrong Side of the Tracks." In Segregation by Design, 98–118. Cambridge University Press, 2018. http://dx.doi.org/10.1017/9781108555722.006.

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García, David G. "Pernicious Deeds." In Strategies of Segregation. University of California Press, 2018. http://dx.doi.org/10.1525/california/9780520296862.003.0003.

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This chapter investigates the White architects' public and private actions to link residential and school segregation. Specifically, the chapter exposes the racial covenants burdening the west-side properties of the very school and city officials who designed the blueprints for school segregation, and argues that they colluded to discriminate against Mexicans in perpetuity. Considering the link between school and residential segregation across four decades, from the 1920s through the 1950s, this chapter explores the subtle and stunning spatial mechanisms of mundane racism in Oxnard. It also analyzes various oral accounts of Mexican women and men who recalled navigating racially segregated spaces in Oxnard from the 1930s to the 1960s.
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Benedetti, A., D. J. Norris, C. J. D. Hetherington, A. G. Cullis, D. J. Robbins, and D. J. Wallis. "FEGTEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD." In Microscopy of Semiconducting Materials 2003, 151–54. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074636-35.

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Conference papers on the topic "SiGe, Segregation"

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Yamamoto, Y., K. Kopke, P. Zaumseil, and B. Tillack. "Phosphorus Segregation Control for SiGe:C Epitaxy." In 2006 International SiGe Technology and Device Meeting. IEEE, 2006. http://dx.doi.org/10.1109/istdm.2006.246564.

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Thompson, P. E., and G. G. Jernigan. "Determination of the Surface Segregation Ratio of P in Si." In 2006 International SiGe Technology and Device Meeting. IEEE, 2006. http://dx.doi.org/10.1109/istdm.2006.246597.

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Aktas, Ozan, Yuji Yamamoto, Mehmet Kaynak, and Anna Peacock. "Direct laser writing of graded-index SiGe waveguides via phase segregation." In Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI, edited by Carlos Molpeceres, Aiko Narazaki, and Jie Qiao. SPIE, 2021. http://dx.doi.org/10.1117/12.2575437.

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Borot, G., L. Rubaldo, N. Breil, J. Boussey, X. Mescot, G. Ghibaudo, and D. Dutartre. "Surface Segregation and Electrical Studies of Heavily Arsenic and Phosphorus in situ Doped Epi and Poly Silicon." In 2006 International SiGe Technology and Device Meeting. IEEE, 2006. http://dx.doi.org/10.1109/istdm.2006.246563.

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Xia, Guangrui. "Dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe devices." In ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC). IEEE, 2017. http://dx.doi.org/10.1109/essderc.2017.8066646.

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Matsumura, R., R. Kato, Y. Tojo, T. Sadoh, and M. Miyao. "Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.p-2-2.

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Kimura, Yoshinobu, Kiyokazu Nakagawa, and Masanobu Miyao. "Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures." In 1997 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1997. http://dx.doi.org/10.7567/ssdm.1997.d-11-3.

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Huang, Chiao-Ti, Jiun-Yun Li, and James C. Sturm. "High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation." In 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222514.

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P. Tang, V. M. Puri, and and P.H. Patterson. "Size Segregation Studies Using a Primary Segregation Shear Cell." In 2002 Chicago, IL July 28-31, 2002. St. Joseph, MI: American Society of Agricultural and Biological Engineers, 2002. http://dx.doi.org/10.13031/2013.10953.

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MINEO, C., and M. TORRISI. "ON A PARTICLE-SIZE SEGREGATION EQUATION." In Proceedings of the 14th Conference on WASCOM 2007. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812772350_0057.

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Reports on the topic "SiGe, Segregation"

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Restivo, M., M. Stone, D. Herman, D. Lambert, M. Duignan, G. SMITH, B. WELLS, G. LUMETTA, C. ENDRELIN, and H. ADKINS. TECHNOLOGY EVALUATION FOR CONDITIONING OF HANFORD TANK WASTE USING SOLIDS SEGREGATION AND SIZE REDUCTION. Office of Scientific and Technical Information (OSTI), April 2014. http://dx.doi.org/10.2172/1129160.

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Restivo, Michael L., M. E. Stone, D. T. Herman, Daniel P. Lambert, Mark R. Duignan, Gary L. Smith, Beric E. Wells, Gregg J. Lumetta, Carl W. Enderlin, and Harold E. Adkins. Technology Evaluation for Conditioning of Hanford Tank Waste Using Solids Segregation and Size Reduction. Office of Scientific and Technical Information (OSTI), April 2014. http://dx.doi.org/10.2172/1130664.

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Ananat, Elizabeth Oltmans. The Wrong Side(s) of the Tracks Estimating the Causal Effects of Racial Segregation on City Outcomes. Cambridge, MA: National Bureau of Economic Research, August 2007. http://dx.doi.org/10.3386/w13343.

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Environmental assessment for the construction, operation, and decommissioning of the Waste Segregation Facility at the Savannah River Site. Office of Scientific and Technical Information (OSTI), January 1998. http://dx.doi.org/10.2172/576060.

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