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Journal articles on the topic 'SiGe, Segregation'

Author: Grafiati

Published: 4 June 2021

Last updated: 16 February 2022

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1

Tarus, J., M. Tantarimäki, and K. Nordlund. "Segregation in SiGe clusters." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 228, no. 1-4 (January 2005): 51–56. http://dx.doi.org/10.1016/j.nimb.2004.10.022.

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2

Nützel, J. F., M. Holzmann, P. Schittenhelm, and G. Abstreiter. "Segregation of n-dopants on SiGe surfaces." Applied Surface Science 102 (August 1996): 98–101. http://dx.doi.org/10.1016/0169-4332(96)00029-3.

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3

Bergamaschini, Roberto, Rianne C. Plantenga, Marco Albani, Emilio Scalise, Yizhen Ren, Håkon Ikaros T. Hauge, Sebastian Kölling, et al. "Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP–Si–SiGe nanowires by controlled faceting." Nanoscale 13, no. 20 (2021): 9436–45. http://dx.doi.org/10.1039/d0nr08051a.

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4

Goeller, Peter T., Boyan I. Boyanov, Dale E. Sayers, Robert J. Nemanich, Alline F. Myers, and Eric B. Steel. "Germanium segregation in the Co/SiGe/Si(001) thin film system." Journal of Materials Research 14, no. 11 (November 1999): 4372–84. http://dx.doi.org/10.1557/jmr.1999.0592.

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Cobalt disilicide contacts to silicon–germanium alloys were formed by direct deposition of pure cobalt metal onto silicon–germanium films on Si(001) substrates. Segregation of germanium was observed during the reaction of the cobalt with the silicon–germanium alloy. The nature of the Ge segregation was studied by transmission electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. In the case of cobalt films deposited onto strained silicon–germanium films, the Ge segregation was discovered to be in the form of Ge-enriched Si1−xGex regions found at the surface of the film surrounding CoSi and CoSi2 grains. In the case of cobalt films deposited onto relaxed silicon–germanium films, the Ge segregation was dependent on formation of CoSi2. In samples annealed below 800 °C, where CoSi was the dominant silicide phase, the Ge segregation was similar in form to the strained Si1−xGex case. In samples annealed above 800 °C, where CoSi2 was the dominant silicide phase, the Ge segregation was also in the form of tetrahedron-shaped, Ge-enriched, silicon–germanium precipitates, which formed at the substrate/silicon– germanium film interface and grew into the Si substrate. A possible mechanism for the formation of these precipitates is presented based on vacancy generation during the silicidation reaction coupled with an increased driving force for Ge diffusion due to silicon depletion in the alloy layer.

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5

Weizman, M., N. H. Nickel, I. Sieber, W. Bohne, J. Röhrich, E. Strub, and B. Yan. "Phase segregation in laser crystallized polycrystalline SiGe thin films." Thin Solid Films 487, no. 1-2 (September 2005): 72–76. http://dx.doi.org/10.1016/j.tsf.2005.01.038.

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6

Weizman, M., N. H. Nickel, I. Sieber, and B. Yan. "Successive segregation in laser-crystallized poly-SiGe thin films." Journal of Non-Crystalline Solids 352, no. 9-20 (June 2006): 1259–62. http://dx.doi.org/10.1016/j.jnoncrysol.2005.10.059.

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7

Twesten, R. D., J. A. Floro, and E. Chasonf. "Ge distribution in Gi80Ge20 Islands Grown in the High Mobility Regime." Microscopy and Microanalysis 4, S2 (July 1998): 662–63. http://dx.doi.org/10.1017/s1431927600023436.

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Strained epitaxial films are often unstable to morphological transformations. The classic example of this phenomenon is the SiGe system. A nonplanar morphology results in non-uniform strains in the system (Figure 1). These strain fields can modify the local chemical potential of a uniform alloy driving Ge enrichment in the regions of low compression.Recent work has shown that annealed films of SiGe on Si{001} exhibit both vertical and lateral segregation during the transition from a metastable planar film to an array of ﹛100﹜ directed island. Vertical segregation is evidenced by an enrichment of Ge in the last few monolayers of the film while lateral segregation is seen as an enhancement of this surface layer in the region near the island peaks. This segregation is due to surface diffusion as the bulk diffusion lengths are too short. The case of annealed, metastable films can be compared to growing films.

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8

Jernigan, Glenn G., Phillip E. Thompson, and Conrad L. Silvestre. "Quantitative measurements of Ge surface segregation during SiGe alloy growth." Surface Science 380, no. 2-3 (May 1997): 417–26. http://dx.doi.org/10.1016/s0039-6028(97)00036-8.

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9

Nakagawa, Kiyokazu, Nobuyuki Sugii, Shinya Yamaguchi, and Masanobu Miyao. "Ge concentration dependence of Sb surface segregation during SiGe MBE." Journal of Crystal Growth 201-202 (May 1999): 560–63. http://dx.doi.org/10.1016/s0022-0248(98)01389-x.

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10

Drozdov, M. N., A. V. Novikov, and D. V. Yurasov. "Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy." Semiconductors 47, no. 11 (November 2013): 1481–84. http://dx.doi.org/10.1134/s1063782613110079.

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11

Nyéki, J., C. Girardeaux, G. Erdélyi, A. Rolland, and J. Bernardini. "Equilibrium surface segregation enthalpy of Ge in concentrated amorphous SiGe alloys." Applied Surface Science 212-213 (May 2003): 244–48. http://dx.doi.org/10.1016/s0169-4332(03)00097-7.

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12

Butz, R., and S. Kampers. "Germanium segregation induced reconstruction of SiGe layers deposited on Si(100)." Thin Solid Films 222, no. 1-2 (December 1992): 104–7. http://dx.doi.org/10.1016/0040-6090(92)90047-f.

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13

Amato, Michele, Maurizia Palummo, and Stefano Ossicini. "Segregation, quantum confinement effect and band offset for [110] SiGe NWs." physica status solidi (b) 247, no. 8 (June 23, 2010): 2096–101. http://dx.doi.org/10.1002/pssb.200983931.

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14

Ganster, Patrick, Andrès Saul, and Guy Treglia. "Atomistic Model for Ge Condensation under SiGe Oxidation." Defect and Diffusion Forum 363 (May 2015): 210–16. http://dx.doi.org/10.4028/www.scientific.net/ddf.363.210.

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Oxidation of a dilute Si(Ge) alloy is modeled using an original protocol based on molecular dynamicssimulation and rules for the oxygen insertions. These rules, deduced from ab-initio calculations,favor the formation of SiO2 against GeO2 oxide which leads to segregation of Ge atoms into the alloyduring the oxidation front advance. Ge condensation is then observed close to the SiO2/Ge interfacedue to the strain induced by oxidation in this region. From the analysis of the simulations process, wepropose a one-dimensional description of Ge condensation which reproduces the evolution of the Geconcentration during oxidation of the SiGe alloy.

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15

Berbezier, I., B. Gallas, J. Fernandez, and B. Joyce. "Self-limiting segregation and incorporation during boron doping of Si and SiGe." Semiconductor Science and Technology 14, no. 2 (January 1, 1999): 198–206. http://dx.doi.org/10.1088/0268-1242/14/2/015.

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16

Matsumura, R., Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao. "Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth." ECS Transactions 50, no. 9 (March 15, 2013): 747–51. http://dx.doi.org/10.1149/05009.0747ecst.

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17

Lin, Yiheng, Hiroshi Yasuda, Manfred Schiekofer, and Guangrui (Maggie) Xia. "Coupled dopant diffusion and segregation in inhomogeneous SiGe alloys: Experiments and modeling." Journal of Applied Physics 117, no. 21 (June 7, 2015): 214901. http://dx.doi.org/10.1063/1.4921798.

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18

Larsson, Mats I., and Göran V. Hansson. "Monte Carlo simulations of Ge segregation in strained Si and SiGe alloys." Surface Science 291, no. 1-2 (July 1993): 117–28. http://dx.doi.org/10.1016/0039-6028(93)91483-6.

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19

Lee, Chang Hwi, Geun-Myeong Kim, Young Jun Oh, and K. J. Chang. "Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface." Current Applied Physics 14, no. 11 (November 2014): 1557–63. http://dx.doi.org/10.1016/j.cap.2014.08.027.

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20

Larsson, MatsI, and GöranV Hansson. "Monte Carlo simulations of Ge segregation in strained Si and SiGe alloys." Surface Science Letters 291, no. 1-2 (July 1993): A565. http://dx.doi.org/10.1016/0167-2584(93)90293-r.

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21

Godbey, D. J., J. V. Lill, J. Deppe, and K. D. Hobart. "Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy." Applied Physics Letters 65, no. 6 (August 8, 1994): 711–13. http://dx.doi.org/10.1063/1.112277.

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22

Godbey, D. J. "Concentration dependence of Ge segregation during the growth of a SiGe buried layer." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 4 (July 1993): 1392. http://dx.doi.org/10.1116/1.586947.

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23

Walther, Thomas. "Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide." Nanomaterials 9, no. 6 (June 8, 2019): 872. http://dx.doi.org/10.3390/nano9060872.

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Strategies are discussed to distinguish interdiffusion and segregation and to measure key parameters such as diffusivities and segregation lengths in semiconductor quantum dots and quantum wells by electron microscopy methods. Spectroscopic methods are usually necessary when the materials systems are complex while imaging methods may suffice for binary or simple ternary compounds where atomic intermixing is restricted to one type of sub-lattice. The emphasis on methodology should assist microscopists in evaluating and quantifying signals from electron micrographs and related spectroscopic data. Examples presented include CdS/ZnS core/shell particles and SiGe, InGaAs and InGaN quantum wells.

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24

Godbey, D. J. "Ge segregation during the growth of a SiGe buried layer by molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 3 (May 1993): 1120. http://dx.doi.org/10.1116/1.586824.

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25

Ohtani, N., S. M. Mokler, M. H. Xie, J. Zhang, and B. A. Joyce. "RHEED investigation of Ge surface segregation during gas source MBE of Si/SiGe heterostructure." Surface Science Letters 284, no. 1-2 (March 1993): A287. http://dx.doi.org/10.1016/0167-2584(93)90996-v.

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26

An, Zhenghua, Miao Zhang, Ricky K. Y. Fu, Paul K. Chu, and Chenglu Lin. "Oxygen segregation and Ge diffusion in annealed oxygen ion-implanted relaxed SiGe/Si heterostructures." Journal of Electronic Materials 33, no. 3 (March 2004): 207–12. http://dx.doi.org/10.1007/s11664-004-0181-z.

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27

Walther, T., Colin J. Humphreys, and D. J. Robbins. "Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron Microscopy." Defect and Diffusion Forum 143-147 (January 1997): 1135–40. http://dx.doi.org/10.4028/www.scientific.net/ddf.143-147.1135.

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28

Portavoce, A., F. Volpi, A. Ronda, P. Gas, and I. Berbezier. "Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots." Thin Solid Films 380, no. 1-2 (December 2000): 164–68. http://dx.doi.org/10.1016/s0040-6090(00)01494-2.

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29

Tabata, Toshiyuki, Joris Aubin, Karim Huet, and Fulvio Mazzamuto. "Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal." Journal of Applied Physics 125, no. 21 (June 7, 2019): 215702. http://dx.doi.org/10.1063/1.5096889.

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30

Matsumura, Ryo, Ryusuke Kato, Taizoh Sadoh, and Masanobu Miyao. "Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth." Applied Physics Letters 105, no. 10 (September 8, 2014): 102106. http://dx.doi.org/10.1063/1.4895512.

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31

Kimura, Yoshinobu, Kiyokazu Nakagawa, and Masanobu Miyao. "The effect of surface segregation on the light-emission intensity of Si/SiGe/Si heterostructures." Applied Physics Letters 73, no. 2 (July 13, 1998): 232–34. http://dx.doi.org/10.1063/1.121765.

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32

Sinha, Mantavya, Rinus T. P. Lee, Anup Lohani, Subodh Mhaisalkar, Eng Fong Chor, and Yee-Chia Yeo. "Achieving Sub-0.1 eV Hole Schottky Barrier Height for NiSiGe on SiGe by Aluminum Segregation." Journal of The Electrochemical Society 156, no. 4 (2009): H233. http://dx.doi.org/10.1149/1.3072677.

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33

Kato, R., M. Kurosawa, R. Matsumura, Y. Tojo, T. Sadoh, and M. Miyao. "Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process." ECS Transactions 50, no. 9 (March 15, 2013): 431–36. http://dx.doi.org/10.1149/05009.0431ecst.

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34

Grützmacher, D. A., T. O. Sedgwick, A. Powell, M. Tejwani, S. S. Iyer, J. Cotte, and F. Cardone. "Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere." Applied Physics Letters 63, no. 18 (November 1993): 2531–33. http://dx.doi.org/10.1063/1.110449.

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35

Balasubramanian, Prabhu, Jerrold A. Floro, Jennifer L. Gray, and Robert Hull. "Nano-scale Chemistry of Complex Self-Assembled Nanostructures in Epitaxial SiGe Films." MRS Proceedings 1551 (2013): 75–80. http://dx.doi.org/10.1557/opl.2013.1019.

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ABSTRACTHeteroepitaxy of SiGe alloys on Si (001) under certain growth conditions has previously been shown to cause self-assembly of nanostructures called Quantum Dot Molecules, QDMs, where pyramidal pits and 3D islands cooperatively form. QDMs have potential applications to nanologic device architectures such as Quantum Cellular Automata that relies on localization of charges inside islands to create bi-stable logic states. In order to determine the applicability of QDMs to such structures it is necessary to understand the nano-scale chemistry of QDMs because the chemistry affects local bandgap which in turn affects a QDM’s charge confinement property. We investigate the nanoscale chemistry of QDMs in the Si0.7Ge0.3/Si (100) system using Auger Electron Spectroscopy (AES). Our AES analysis indicates that compressively strained QDM pit bases are the most Ge rich regions in a QDM. The segregation of Ge to these locations cannot be explained by strain energy minimization.

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36

Ni, W. X., G. V. Hansson, J. Cardenas, and B. G. Svensson. "Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy." Thin Solid Films 321, no. 1-2 (May 1998): 131–35. http://dx.doi.org/10.1016/s0040-6090(98)00461-1.

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37

Xiao, H. Z., R. Tsu, I. M. Robertson, H. K. Birnbaum, and J. E. Greene. "Growth of Si on Ge(001)2×l by gas-source molecular beam epitaxy." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 806–7. http://dx.doi.org/10.1017/s0424820100149866.

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The growth of SiGe strained-layer superlattices (SLS) has been received considerable attention due to the electronic and optoelectronic properties of these layers. In addition, these structures offer tantalizing possibilities for "band gap engineering" through the use of strain and chemically ordered alloys. The remaining barriers to grow the SiGe SLS structures with high quality result from the generation of large densities of defects, such as dislocations, twins, stacking faults, etc., at the heterointerfaces arising from the misfit strain relaxation. Other problems associated with the growth of the SiGe SLS structures are segregation and low incorporation of the dopants and inter-diffusion of Si and Ge. In the present study, the inter-mixing of Si and Ge and the generation of the defects in Si epilayers grown on Ge(001)2×1 at 550 °C by gas-source molecular beam epitaxy (MBE) from Si2H6 were studied using transmission electron microscopy (TEM), in-situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and electron energy-loss spectroscopy (EELS).

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38

DENTEL, D., J. L. BISCHOFF, L. KUBLER, C. GHICA, J. WERCKMANN, J. P. DEVILLE, and C. ULHAQ-BOUILLET. "Ge LATERAL SEGREGATION AS A DOMINANT ALLOYING MECHANISM DURING LOW KINETIC Si CAPPING OF STRAINED Si1-xGex HUT ISLANDS." Surface Review and Letters 06, no. 01 (February 1999): 1–6. http://dx.doi.org/10.1142/s0218625x99000020.

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Several cross-sectional transmission electron microscopy images have shed light on the intermixing and island-smoothing mechanisms which occur during Si capping of roughened Si 0.5 Ge 0.5 hut cluster morphologies, strained on Si(001). By modifying either Si cap layer growth rates or temperatures upon identically corrugated alloys, more or less Si and Ge surface migrations are allowed, accordingly affecting the capped final morphology. In these images a Ge marker technique is used to take snapshots of the interfacial region in the first growing stages. They clearly demonstrate that, at 500°C and using low Si growth rates (a few monolayers/min), the segregation does not mainly operate by vertical site exchange but by Ge depletion from the island crests. Ge is able to diffuse laterally onto Si over distances comparable to the island rippling period (a few hundreds of Å) during Si heteregeneous growth in the morphology troughs. The initial island structure, subjected to strain gradients, thus acts as a Ge reservoir for noninterrupted Si surface energy reduction by lateral Ge segregation. The latter operates as long as Si is strain driven to accommodate heterogeneously in the island troughs where it minimizes its elastic energy. This finally results in a vanishing undulated morphology and in a smoothed Si/SiGe interface, at the cost of an alloyed region enlarged by the lateral segregation. As a consequence, the thickness of the smeared region is dominantly determined in this case by the initial hut cluster roughness and not by the usual vertical segregation length.

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39

Song, Young-Joo, Jung-Wook Lim, Sang-Hoon Kim, Hyun-Chul Bae, Jin-Young Kang, Kyung-Wan Park, and Kyu-Hwan Shim. "Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs." Solid-State Electronics 46, no. 11 (November 2002): 1983–89. http://dx.doi.org/10.1016/s0038-1101(02)00139-9.

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40

Yurasov, D. V., M. N. Drozdov, N. D. Zakharov, and A. V. Novikov. "Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters." Journal of Crystal Growth 396 (June 2014): 66–70. http://dx.doi.org/10.1016/j.jcrysgro.2014.03.042.

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41

Дорохин, М. В., П. Б. Демина, И. В. Ерофеева, А. В. Здоровейщев, Ю. М. Кузнецов, М. С. Болдин, А. А. Попов, Е. А. Ланцев, and А. В. Боряков. "Легирование термоэлектрических материалов на основе твeрдых растворов SiGe в процессе их синтеза методом электроимпульсного плазменного спекания." Физика и техника полупроводников 53, no. 9 (2019): 1182. http://dx.doi.org/10.21883/ftp.2019.09.48121.04.

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AbstractThe results of investigation of thermoelectric materials fabricated by spark plasma sintering and based on Si_1 –_ x Ge_ x solid solutions doped with Sb to a concentration of 0–5 at % are presented. It was found that, at Sb concentration below 1 at %, efficient doping of the solid solution was carried out during the sintering process, which allowed us to form a thermoelectric material with a relatively high thermoelectric figure of merit. An increase in the concentration of antimony in the range of 1–5 at % led to a change in the mechanism of doping, which resulted in an increase in the resistance of materials and the segregation of Sb into large clusters. For such materials, a significant decrease in the Seebeck coefficient and thermoelectric figure of merit was noted. The highest obtained thermoelectric figure of merit (ZT) with Sb doping was 0.32 at 350°C, which is comparable with known analogues for the Ge_ x Si_1 –_ x solid solution.

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42

Walther, T., C. J. Humphreys, and A. G. Cullis. "Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy." Applied Physics Letters 71, no. 6 (August 11, 1997): 809–11. http://dx.doi.org/10.1063/1.119653.

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43

Norris, D. J., A. G. Cullis, T. J. Grasby, and E. H. C. Parker. "Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging." Journal of Applied Physics 86, no. 12 (December 15, 1999): 7183–85. http://dx.doi.org/10.1063/1.371810.

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44

Tang, Mengrao, Guangyang Lin, Cheng Li, Chen Wang, Maotian Zhang, Wei Huang, Hongkai Lai, and Songyan Chen. "Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer." Journal of Applied Physics 114, no. 2 (July 14, 2013): 023515. http://dx.doi.org/10.1063/1.4813778.

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45

Huyghebaert, C., B. Brijs, T. Janssens, and W. Vandervorst. "Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGe." Applied Surface Science 203-204 (January 2003): 56–61. http://dx.doi.org/10.1016/s0169-4332(02)00658-x.

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46

Tok, E. S., N. J. Woods, and J. Zhang. "RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence." Journal of Crystal Growth 209, no. 2-3 (February 2000): 321–26. http://dx.doi.org/10.1016/s0022-0248(99)00563-1.

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47

Portavoce, A., P. Gas, I. Berbezier, A. Ronda, J. S. Christensen, and B. Svensson. "Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress." Journal of Applied Physics 96, no. 6 (September 15, 2004): 3158–63. http://dx.doi.org/10.1063/1.1781767.

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48

Wang, Xindan, and David J. Sherratt. "Independent Segregation of the Two Arms of the Escherichia coli ori Region Requires neither RNA Synthesis nor MreB Dynamics." Journal of Bacteriology 192, no. 23 (October 1, 2010): 6143–53. http://dx.doi.org/10.1128/jb.00861-10.

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ABSTRACT The mechanism of Escherichia coli chromosome segregation remains elusive. We present results on the simultaneous tracking of segregation of multiple loci in the ori region of the chromosome in cells growing under conditions in which a single round of replication is initiated and completed in the same generation. Loci segregated as expected for progressive replication-segregation from oriC, with markers placed symmetrically on either side of oriC segregating to opposite cell halves at the same time, showing that sister locus cohesion in the origin region is local rather than extensive. We were unable to observe any influence on segregation of the proposed centromeric site, migS, or indeed any other potential cis-acting element on either replication arm (replichore) in the AB1157 genetic background. Site-specific inhibition of replication close to oriC on one replichore did not prevent segregation of loci on the other replichore. Inhibition of RNA synthesis and inhibition of the dynamic polymerization of the actin homolog MreB did not affect ori and bulk chromosome segregation.

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49

Bollache, L., and F. Cézilly. "The influence of micro-habitat segregation on size assortative pairing in Gammarus pulex (L.) (Crustacea, Amphipoda)." Fundamental and Applied Limnology 147, no. 4 (February 11, 2000): 547–58. http://dx.doi.org/10.1127/archiv-hydrobiol/147/2000/547.

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50

Wang, Jianjun, Xiaofang Shi, Lizhong Chang, Haijun Wang, and Lipeng Meng. "Effect of Ultrasonic Treatment on the Solidification Microstructure of GCr15 Bearing Steel." High Temperature Materials and Processes 35, no. 2 (February 1, 2016): 161–68. http://dx.doi.org/10.1515/htmp-2014-0148.

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AbstractUltrasonic treatment with various powers is introduced to liquid steel from the side wall of a mold during GCr15 steel solidification, and the effect of ultrasonic on the microstructure and properties of GCr15 steel is investigated. Results show that the columnar grains in the GCr15 steel are coarse and that the microstructure is inhomogeneous when ultrasonic is not applied on the liquid steel. A suitable power ultrasonic leads to the appearance of a large number of equiaxed grains and increases the uniformity of the microstructure. The segregation of alloy elements gradually decreases as the power increases from 0 W to 500 W. The maximum segregations of carbon and silicon decrease from 2.541 to 1.129 and 2.861 to 1.196, respectively. Given a power of 500 W, the statistical segregations of carbon and silicon decrease from 0.0964 to 0.0693 and 0.1152 to 0.1075, respectively. A further increase in ultrasonic power is not conducive for improving the element segregation. Ultrasonic treatment can remarkably refine the size of carbide and increase the uniformity of its distribution. When the powers are 0 W, 300 W, 500 W, 700 W, and 1,000 W, the average sizes of carbide are 14.63 μm, 2.96 μm, 3.05 μm, 3.72 μm, and 7.83 μm, respectively. The tensile strength, yield strength, and ductility and reduction of the area of the GCr15 bearing steel are correspondingly improved to varying degrees.

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