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Relevant bibliographies by topics / [SiH4 + CO2 + He] plasma

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Academic literature on the topic '[SiH4 + CO2 + He] plasma'

Author: Grafiati

Published: 7 September 2023

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Journal articles on the topic "[SiH4 + CO2 + He] plasma"

1

Samanta, Arup, and Debajyoti Das. "Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4+CO2) plasma at low temperature." Applied Surface Science 259 (October 2012): 477–85. http://dx.doi.org/10.1016/j.apsusc.2012.07.070.

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2

Samanta, Arup, and Debajyoti Das. "Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD." Solar Energy Materials and Solar Cells 93, no. 5 (2009): 588–96. http://dx.doi.org/10.1016/j.solmat.2008.12.005.

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3

Sobajima, Yasushi, Shota Kinoshita, Shinnosuke Kakimoto, et al. "Control of growth process for obtaining high-quality a-SiO:H." Canadian Journal of Physics 92, no. 7/8 (2014): 582–85. http://dx.doi.org/10.1139/cjp-2013-0558.

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Film-growth process of hydrogenated amorphous silicon–oxygen alloys (a-SiO:H) from CO2/(CO2 + SiH4) plasma has been investigated to control the optoelectronic properties in the resulting materials. Optical emission spectroscopy results and simple simulation results for steady-state density of chemical species in the plasma indicate that main film-growth precursors for a-SiO:H are SiH3, OH, and O. Si dangling-bond defect density is drastically increased in a-SiO:H when increasing the CO2 gas ratio in CO2/(CO2 + SiH4) plasma, being caused by the increase in the contribution ratio of Si-related short-lifetime species (SiHx, x < 2) to film growth owing to a severe SiH4-molecule depletion because of high-rate consumption reaction of SiH4 with O produced from CO2 in the plasma. Considering the primary electron impact dissociation reactions of source gas molecules and several secondary chemical reactions in the plasma, the guiding principle for obtaining high quality a-SiO:H has been proposed.

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4

Jo, Sanghyun, Suik Kang, Kyungjun Lee, and Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas." Coatings 12, no. 9 (2022): 1342. http://dx.doi.org/10.3390/coatings12091342.

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This study investigates, numerically, the spatial distribution of metastable helium (He*) in He/SiH4 capacitively coupled plasma (CCP) for the purpose of optimizing plasma density distributions. As a first step, we presented the results of a two-dimensional fluid model of He discharges, followed by those of He/SiH4 discharges to deposit hydrogenated amorphous silicon films, to investigate which factor dominates the coating uniformity. We retained our CCPs in the 300 mm wafer reactor used by the semiconductor industry in the recent past. Selected parameters, such as a sidewall gap (radial distance between the electrode edge and the sidewall), electrical condition of the sidewall, and position of the powered electrode, were considered. In addition, by increasing the gas pressure while varying the sidewall condition, we observed modification of the plasma distributions and, thus, the deposition rate profiles. According to the results, the shift in He* distributions was mainly due to the reduction in the electron mean free path under conditions of gas pressure higher than 100 Pa, as well as local perturbations in the ambipolar electric field due to the finite electrode structure. Small additions of SiH4 largely changed the He* density profile in the midplane of the discharge due to He* quenching. Furthermore, we found that the wide sidewall gap did not improve deposition uniformity against the expectation. This was because the excitation and ionization rate profiles were enhanced and localized only near the bottom electrode edge.

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5

Ershov, I. A., V. I. Pustovoy, V. I. Krasovskii, et al. "Synthesis and properties of silicon carbide nanoparticles obtained by laser pyrolysis method." Physics and Chemistry of Materials Treatment 1 (2021): 51–57. http://dx.doi.org/10.30791/0015-3214-2021-1-51-57.

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The conditions for the synthesis of silicon carbide nanoparticles in a SiH4/C2H2/Ar/He gas mixture under the action of CO2 laser radiation with a wavelength of 10.6 μm are determined. It was found that laser synthesis of SiC particles is observed when the ratio of gas flows SiH4/C2H2 is in the range of 1.6-3.2. The temperature in the region of the reaction zone was ~1400-1500°C. Silicon carbide nanoparticles ~6 nm in diameter were obtained and their composition was investigated.

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6

Park, Hwanyeol, and Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma." Coatings 11, no. 9 (2021): 1041. http://dx.doi.org/10.3390/coatings11091041.

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The rapid and uniform growth of hydrogenated silicon (Si:H) films is essential for the manufacturing of future semiconductor devices; therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture gas has been demonstrated to increase the deposition rate in the SiH4-based plasmas. The fact that SiH4 more efficiently generates Si2H6 at higher gas pressures requires a theoretical investigation of the reactivity of Si2H6 on various surfaces. Therefore, we conducted first-principles density functional theory (DFT) calculations to understand the surface reactivity of Si2H6 on both hydrogenated (H-covered) Si(001) and Si(111) surfaces. The reactivity of Si2H6 molecules on hydrogenated Si surfaces was more energetically favorable than on clean Si surfaces. We also found that the hydrogenated Si(111) surface is the most efficient surface because the dissociation of Si2H6 on the hydrogenated Si(111) surface are thermodynamically and kinetically more favorable than those on the hydrogenated Si(001) surface. Finally, we simulated the SiH4/He capacitively coupled plasma (CCP) discharges for Si:H films deposition.

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7

Jia, Haijun, and Michio Kondo. "High rate synthesis of crystalline silicon films from SiH4+He using high density microwave plasma." Journal of Applied Physics 105, no. 10 (2009): 104903. http://dx.doi.org/10.1063/1.3129321.

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8

Das, Debajyoti, Madhusudan Jana та A. K. Barua. "Characterization of undoped μc-SiO:H films prepared from (SiH4+CO2+H2)-plasma in RF glow discharge". Solar Energy Materials and Solar Cells 63, № 3 (2000): 285–97. http://dx.doi.org/10.1016/s0927-0248(00)00035-0.

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9

Lee, Sung‐Woo, Du‐Chang Heo, Jin‐Kyu Kang, Young‐Bae Park, and Shi‐Woo Rhee. "Microcrystalline Silicon Film Deposition from H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition." Journal of The Electrochemical Society 145, no. 8 (1998): 2900–2904. http://dx.doi.org/10.1149/1.1838733.

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10

Dian, J., J. Valenta, J. Hála, et al. "Visible photoluminescence in hydrogenated amorphous silicon grown in microwave plasma from SiH4 strongly diluted with He." Journal of Applied Physics 86, no. 3 (1999): 1415–19. http://dx.doi.org/10.1063/1.370904.

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