Relevant bibliographies by topics / Silicon atomic ions

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon atomic ions'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Silicon atomic ions"

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Ham, NS, and T. McAllister. "Flame Ionization of Silicon, Germanium and Tin." Australian Journal of Chemistry 38, no. 3 (1985): 347. http://dx.doi.org/10.1071/ch9850347.

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.When compounds of Si , Ge and Sn are added to 2/C6H6 diffusion flames, ions characteristic of the elements are detected in the burnt gases by mass spectrometry. The ions, which are attributed to charge exchange and proton transfer reactions of H3O+, may be divided into three categories, atomic ions, protonated monoxides and protonated oxyacids . Sn gives atomic ions and protonated monoxides, a similar result to Pb , but neither Si nor Ge give atomic ions. This may be a consequence of the lack of Si and Ge atoms in the burnt gases. Ge and Sn give a protonated monoxide, but Si does not. This observation leads to the suggestion that proton affinities of the Group 4a monoxides are in the order CO, SiO < H2O < GeO , SnO , PbO. Protonated silicic and germanic acids are observed in the burnt gases of Si - and Ge -containing flames, but no oxyacids were observed in Sn -or Pb -containing flames. This indicates that the proton affinities of both acids are greater than that of H2O.
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Bohme, Diethard K. "Chemistry initiated by atomic silicon ions in the gas phase: formation of silicon-bearing ions and molecules." International Journal of Mass Spectrometry and Ion Processes 100 (October 1990): 719–36. http://dx.doi.org/10.1016/0168-1176(90)85105-b.

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Nagy, Péter M., P. Horváth, Gábor Pető, and Erika Kálmán. "Nanoindentation of Silicon." Materials Science Forum 604-605 (October 2008): 29–36. http://dx.doi.org/10.4028/www.scientific.net/msf.604-605.29.

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The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.
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Liu, Yao, Zhongtao Ouyang, Li Yang, Yang Yang, and Jiaming Sun. "Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon." Nanomaterials 9, no. 3 (March 11, 2019): 413. http://dx.doi.org/10.3390/nano9030413.

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Realization of a silicon-based light source is of significant importance for the future development of optoelectronics and telecommunications. Here, nanolaminate Al2O3/Tm2O3 films are fabricated on silicon utilizing atomic layer deposition, and intense blue electroluminescence (EL) from Tm3+ ions is achieved in the metal-oxide-semiconductor structured luminescent devices based on them. Precise control of the nanolaminates enables the study on the influence of the Tm dopant layers and the distance between every Tm2O3 layer on the EL performance. The 456 nm blue EL from Tm3+ ions shows a maximum power density of 0.15 mW/cm2. The EL intensities and decay lifetime decrease with excessive Tm dopant cycles due to the reduction of optically active Tm3+ ions. Cross-relaxation among adjacent Tm2O3 dopant layers reduces the blue EL intensity and the decay lifetime, which strongly depends on the Al2O3 sublayer thickness, with a critical value of ~3 nm. The EL is attributed to the impact excitation of the Tm3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism.
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BOHME, D. K. "ChemInform Abstract: Chemistry Initiated by Atomic Silicon Ions in the Gas Phase: Formation of Silicon-Bearing Ions and Molecules." ChemInform 22, no. 18 (August 23, 2010): no. http://dx.doi.org/10.1002/chin.199118299.

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SINHA, O. P., P. C. SRIVASTAVA, and V. GANESAN. "MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES." Surface Review and Letters 11, no. 03 (June 2004): 265–69. http://dx.doi.org/10.1142/s0218625x04006177.

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The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.
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Щербаков, И. П., and А. Е. Чмель. "Сравнительный фотолюминесцентный анализ точечных дефектов в SiO-=SUB=-2-=/SUB=-, индуцированных имплантацией ионов Ar-=SUP=-+-=/SUP=- и облучением нейтронами." Письма в журнал технической физики 45, no. 5 (2019): 24. http://dx.doi.org/10.21883/pjtf.2019.05.47392.17610.

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AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).
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Dixon Northern, B. L., Y. L. Chen, J. N. Israelachvili, and J. A. N. Zasadzinski. "Atomic force microscopy of mica surface after ion replacement." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 628–29. http://dx.doi.org/10.1017/s0424820100087458.

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Atomic Force Microscope (AFM), is the newest, and potentially most powerful of the scanning probe microscopes. The (AFM) is capable of resolutions approaching atomic dimensions on ideal surfaces. One of the favorite such surfaces is that of mica. Muscovite mica has a platelike structure consisting of an octahedral alumina sheet sandwiched by two tetrahedral silicate sheets. As a result of this structure, mica cleaves readily along a plane leaving a molecularly smooth surface. Because of the isomorphous substitution of the tetravalent silicon by trivalent aluminium, mica has an excess negative surface charge.This negative surface charge of 2.1-1014 charges per cm2 is neutralized by an equal number of positive monovalent ions, mainly potassium ions. The ion-exchangable surface ions of mica, in aqueous solution, can be readily replaced by other monovalent or multivalent ions. This ion exchange alters the surface of the mica. We then follow these changes by imaging with the AFM in air.
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Insepov, Zeke, Ardak Ainabayev, Kumiszhan Dybyspayeva, Abat Zhuldassov, Sean Kirkpatrick, Micheal Walsh, and Anatoly F. Vyatkin. "Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions." MRS Advances 1, no. 20 (2016): 1417–22. http://dx.doi.org/10.1557/adv.2016.205.

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ABSTRACTDefect formation in the samples of graphene, graphene oxide and silicon irradiated with Ar cluster and highly-charged ion irradiations were studied. Ar cluster ions, with acceleration energy E = 30 kV (Exogenesis nAccel00, Boston, USA) and total Ar cluster ion fluences ranged from 1x109cm-2to 1x1013cm-2were directed toward various surfaces. Highly-charged ions (HCI) bombardment on surfaces with highly charged Xeq+(q= 22) was employed at Eurasian National University, Kazakhstan, using a DC-60 cyclotron accelerator. Multi-layer graphene oxide, single-layer graphene- (SLG), few-layer of graphene (FLG) and polished Si are used for irradiation experiments. The study of irradiated samples was conducted by Raman spectroscopy, atomic force microscopy (AFM). Uniformly distributed defects and craters were observed on the surfaces of graphene, graphene oxide and silicon irradiated with cluster and HCI beams in our experiments. Ab-initio density-functional theory (DFT) was used to study point defects and molecular-dynamics (MD) simulations were used for studying formation of craters due to gas cluster ion impacts in graphene. The results of simulations were compared with experimental craters and surface shape.
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Bacchus-Montabonel, M. C. "Recombination of silicon ions by electron capture from atomic hydrogen and helium." Theoretical Chemistry Accounts: Theory, Computation, and Modeling (Theoretica Chimica Acta) 104, no. 3-4 (July 21, 2000): 296–301. http://dx.doi.org/10.1007/s002140000120.

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Dissertations / Theses on the topic "Silicon atomic ions"

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Carette, Thomas. "Isotope effects in atomic spectroscopy of negative ions and neutral atoms: a theoretical contribution." Doctoral thesis, Universite Libre de Bruxelles, 2010. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/210024.

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Cette thèse est consacrée à l'étude des effets isotopiques dans les atomes neutres et ions négatifs. En particulier, nous ciblons notre recherche sur le calcul ab initio des déplacements isotopiques (DI) sur les électroaffinités des éléments des blocs p des deuxième et troisième périodes (B à F et Al à Cl). Ces derniers sont les systèmes les plus susceptibles d'être l'objet d'études expérimentales de haute précision.

Le premier chapitre se concentre sur une étude didactique du problème atomique et des effets isotopiques. Nous concluons par une description détaillée des motivations de notre thèse.

Le second chapitre présente le modèle Hartree-Fock (HF) et son extension multi-configurationelle (MCHF). Nous y énonçons le théorème de Brillouin et sa généralisation à un ansatz MCHF. Pour ce faire, nous formulons de manière originale le principe d'invariance d'une fonction d'onde CAS (Complete Active Set) par rapport aux rotations d'états d'orbitales. De cette formulation, nous caractérisons la famille des solutions CAS n'interagissant pas avec une fonction d'état de configuration (CSF) particulière et démontrons sa multiplicité. Finalement, nous appliquons notre technique d'analyse à l'étude de modèles concrets et prédisons l'apparition de minima locaux correspondant à chacune de ces solutions GBT. Introduisant le concept de quasi-symétrie de la fonctionnelle d'énergie, nous expliquons l'origine de fortes perturbations du "coeur" atomique dans des modèles particuliers.

Les troisième et quatrième chapitres fournissent les outils méthodologiques de base utilisés dans la deuxième partie de notre thèse qui présente des résultats quantitatifs originaux.

Le cinquième chapitre traite des DI et structures hyperfines des termes les plus bas de S, S-, Cl, Cl-, Si et Si-.

Dans le sixième chapitre, nous rapportons un profond désaccord entre théorie et expérience au sujet de la structure hyperfine de transitions de l'azote dans le infrarouge lointain. Nous montrons que les simulations basées sur nos valeurs de constantes isotopiques sont compatibles avec les spectres enregistrés moyennant une réassignation des raies faibles à des signaux de "cross-overs". Sur cette base, nous déduisons un nouvel ensemble de constantes hyperfines pour les états considérés, en bon accord avec nos valeurs théoriques, en nous basant uniquement sur les données expérimentales.

Le septième chapitre est une étude globale des configurations de plus basse énergie du C et C- (i.e. tous les états liés de ce dernier). Par une étude détaillée de nos incertitudes, nous obtenons des estimations très fiables et de grande précision pour un ensemble de propriétés. En particulier, nous présentons les valeurs de structure fine et hyperfine du C-, ainsi que les probabilités de transitions intra-configurationelles fournissant une base solide pour l'étude spectroscopique de ce système.

Dans le huitième chapitre, nous étudions la périodicité du déplacement spécifique de masse sur l'électroaffinité dans le Tableau Périodique des Eléments. Nous avançons les contributions dominantes qui interviennent dans cette grandeur et analysons les principales limitations des techniques de calcul actuelles dans ce contexte.

Nous présentons nos conclusions générales et les perspectives de notre travail dans le neuvième chapitre.


Doctorat en Sciences
info:eu-repo/semantics/nonPublished

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Pastol, Yvon. "Etude de la cristallisation en phase solide de couches minces de silicium implantees." Paris 7, 1987. http://www.theses.fr/1987PA077142.

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Etude des effets de dopage par implantation de bore et de phosphore. Etude du role des defauts d'irradiation dans des couches implantees au silicium. Les couches implantees et non implantees sont cristallisees en phase solide par recuit thermique a basse temperature. Etude de la taille des grains, de la texture, de la morphologie de surface et de la conductivite electriques des couches en fonction de la concentration d'ions implantes
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Taoufik, Ahmed. "Interaction d'ions de gaz rares de faible energie avec des surfaces cristallines de silicium : implantation et degats d'irradiation." Université Louis Pasteur (Strasbourg) (1971-2008), 1986. http://www.theses.fr/1986STR13064.

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Etude par spectrometrie auger et spectrometrie de desorption thermique. Influence de la dose et de l'energie des ions, de la temperature d'irradiation, de la matiere du gaz et de la face cristalline. Les resultats suggerent une forte interaction entre le gaz et les degats. Proposition d'une etape determinante commune a la desorption et a la recristallisation
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Lee, Michael V. "Development of chemomechanical functionalization and nanografting on silicon surfaces /." Diss., CLICK HERE for online access, 2007. http://contentdm.lib.byu.edu/ETD/image/etd2023.pdf.

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Bowyer, Mark David James. "Simulation of ion transplantation in amorphous targets using moments solutions of transport equations with emphasis on silicon technology." Thesis, University of Kent, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357097.

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Fauré, Joël. "Etude de surfaces monocristallines de silicium par reflexion d'electrons : degradation par implantation d'ions argon, reorganisation par recuit." Toulouse 3, 1987. http://www.theses.fr/1987TOU30108.

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Etude de la degradation de la surface plane si(111) par implantation d'ions ar**(+) a temperature ambiante. Lorsque la dose d'ions implantes augmente, l'intensite des taches du diagramme de diffraction diminue progressivement et les marches atomiques, observees en microscopie electronique par reflexion, disparaissent. Lorsque l'energie incidente des ions ar**(+) augmente, la vitesse de degradation de la surface diminue. Apres disparition complete des marches atomiques, un recuit thermique "in situ" de quelques minutes a 575**(o)c permet de retrouver la topographie de la surface initiale. Le recuit provoque la desorption complete de l'argon implante et de retour en sites des atomes de la surface
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Treussart, François. "Etude expérimentale de l'effet laser dans des microsphères de silice dopées avec des ions neodyme." Phd thesis, Université Pierre et Marie Curie - Paris VI, 1997. http://tel.archives-ouvertes.fr/tel-00011781.

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Ce travail de thèse porte sur la mise en évidence de l'effet laser dans des microrésonateurs optiques de très haute surtension, basés sur les modes de galerie de microsphères de silice d'un diamètre de 50 à 100 μm. Ces modes résonnants correspondent à une propagation guidée par réflexion totale interne. La lumière est ainsi confinée dans un anneau équatorial dont les dimensions transversales sont de l'ordre de la longueur d'onde, ce qui donne lieu à une forte exaltation du champ lumineux. Les pertes de ces modes guidés sont extrêmement faibles. Ils offrent donc la combinaison remarquable d'une très forte localisation du champ dans un tout petit volume et de très longs temps de vie pour les photons. Ces propriétés en font des résonateurs de choix tant pour obtenir des effets d'Optique non-linéaire à très bas seuil que pour des expériences d'Électrodynamique Quantique en cavité. Ce mémoire présente d'abord les propriétés de ces résonances et leur observation expérimentale par spectroscopie laser. Le dédoublement de ces résonances par rétrodiffusion interne est ensuite décrit et interprété par un modèle d'oscillateurs couplés, en bon accord avec les expériences. La réalisation d'un microlaser avec des microbilles dopées au néodyme est ensuite présentée. Les très bas seuils observés (200 nW) correspondent bien aux prédictions théoriques obtenues par un modèle semi-classique approprié. Pour renforcer les effets de cavité, ces expériences ont été poursuivies en immergeant les microsphères dans l'hélium superfluide. Le montage cryogénique mis au point nous permet de conserver des surtensions à 2 K de 10^9 et l'émission laser a pu être observée, ouvrant la voie à la recherche d'un fonctionnement laser avec seulement quelques ions couplés à quelques photons.
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Mosnier, Jean-Paul. "Spectre d'émission X d'ions silicium par la méthode "faisceau-feuille"." Paris 6, 1986. http://www.theses.fr/1986PA066025.

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Analyse du spectre de rayons X émis après la traversée d'une feuille de C par un faisceau d'ions de Si de 44mev. Identification des raies satellites observées à partir de résultats théoriques par la méthode de Dirac-fock multiconfigurationnelle; mise en évidence de plusieurs configurations ayant un électron m. Par analyse des spectres à partir des valeurs calculées des rapports de branchement, confirmation d'un processus de population statistique des états excités initiaux associés à une même configuration électronique. Effet de la réponse du gaz d'électrons libres de la cible sur l'énergie de la raie de résonnance.
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Lotharukpong, Chalothorn. "Defect characterisation in multi-crystalline silicon." Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:a803fada-2296-41c3-9d96-864c186957a2.

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Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured. A new APT specimen fabrication process was developed with the ability to select a specific defect for APT analysis. Development of the APT specimen fabrication process proceeded by first selecting and optimising the preferential etching for nano-scale defect delineation. Three etchants were evaluated, namely Secco, Sirtl and Dash, from which the Secco etch was selected. Three parameters were optimised to produce etch pits with geometries that meet the requirements imposed by APT specimen fabrication methods. The optimum parameters were 0.05M potassium dichromate concentration, 20°C etch temperature, and 30sec etch time. In the second stage, marking techniques were developed in order for the defects to be located throughout the APT specimen fabrication process. However, it became apparent that the conventional APT specimen fabrication method could not be used to fabricate APT specimens containing selected defects in a mc-Si sample. This led to the development of a novel APT specimen fabrication approach which allowed APT specimens to be fabricated, reproducibly, containing grain boundaries and isolated dislocations. In order to evaluate accurately iron contamination in mc-Si, four atom probe parameters were optimised to maximise detection sensitivity: the evaporation rate, the laser beam energy, the pulse repetition rate and the specimen temperature. The optimisation process can be divided in to two parts. In the first part, a matrix of pre-sharpened single-crystal silicon specimens was subjected to a variety of experimental parameters. The optimised parameters were determined to be 0.3% evaporation rate, 0.5nJ beam energy, 160kHz repetition rate and 55K specimen temperature. The second part was to determine the iron detection efficiency –the percentage of detected Fe ions that can be correctly identified as Fe– and sensitivity using these parameters to analyse a specially prepared iron calibration specimen. The values were determined to be a detection efficiency of about 35% and sensitivity of 54ppm or 2.70x1018 atom/cm3. The APT specimen fabrication process and the optimised APT analysis parameters were used to analyse four extended defects in mc-Si samples subjected to three different processing conditions, namely gold-contaminated, as-grown and phosphorus diffusion gettering (PDG). The important aspects of the analysis are listed below: • Gold was not detected at the grain boundary and its associated dislocations in the gold-contaminated specimen. The binding enthalpy of gold to such defects is thus less than 0.63eV. • Iron was not detected in any specimen. • Copper was observed at the grain boundary in the as-grown specimen in the form of individual atoms as well as clusters with diameters ranging between 4nm and 9nm. The electrical activity of the grain boundary was about 58%. • Nickel and carbon were detected at the grain boundary in the post-PDG specimen with the former having platelet structures with diameters and thicknesses ranging between 4nm-7nm and 2nm-4nm, respectively. The recombination strength of the defect was about 22%. • Two nickel clusters were found at the isolated dislocation in the post-PDG specimen. The clusters were spherical with an average diameter of 10nm. The distance between the two clusters was 35nm. The recombination strength of the defect was about 4%.
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Ivassechen, Janaíne do Rocio. "Sílica mesoporosa como suporte sólido para o ancoramento da molécula 4-amino-3-hidrazino-5-mercapto-1,2,4-triazole e aplicação na adsorção de Cu(II), Cd(II), Ni(II), Pb(II) e Co(II) em amostras aquosas /." Araraquara, 2016. http://hdl.handle.net/11449/134329.

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Orientador: Gustavo Rocha de Castro
Banca: Arnaldo Alves Cardoso
Banca: Maria Olimpia de Oliveira Rezende
Resumo: A determinação direta de metais presentes em baixas concentrações em amostras de águas naturais é geralmente dificultada devido à presença de espécies interferentes. Os metais que foram estudados, Cu (II), Pb(II), Co (II), Ni (II) e Cd (II) são de interesse ambiental em razão de seu uso intensivo, distribuição e por serem absolutamente não - degradáveis podem acumular - se em matrizes ambie ntais manifestando toxicidade. Ne ste projeto desenvolveu - se a sílica como suporte sólido para o ancoramento da molécula 4 - amino - 3 - hidrazino - 5 - mercapto - 1,2,4 - triazole e sua aplicação na adsorção/remoção de íons em solução aquosa. O material foi caracterizado por espectroscopia na r egião do infravermelho (FTIR), o qual apresentou bandas em 1690 - 1649 e 790 cm - 1, característica de ligações N - H de aminas primárias do ligante. A ressonância magnética nuclear de 13 C e 29 Si (RMN) comprovam o ancoramento do ligante. As medidas d e área de superfície específica pelo método de BET e diâmetro de poro resultaram em uma área de 795,51 ± 1,14 m2 g - 1 e poros numa gama de 1,1 a 7,1 nm. A Microscopia Eletrônica de Varredura (MEV) mostrou que o material tem formato esférico com tamanhos aproximadamente de 10 μm e a Análise por Energia Dispersiva de R aios X (EDX) mostro u uma distribuição homogênea do sililante por toda a superfície do material. Com isso, confirm ou - se a ocorrência da reação de modificação. O material foi aplicado em estudos de adsorção para determinação da sua capacidade máxima, bem como estudos da influê ncia do pH e estudos cinéticos no processo de equilíbrio Os experimentos foram realizados pelo método de batelada. O primeiro teste foi o pH PZC, que indica a melhor faixa de pH (5 - 9) para a adsorção. Os estudos de adsorção dos metais em solução apresentara m o melhor resultado quando o pH era igual a 6, o equilíbrio...
Abstract: The direct determination of metals present at trace levels in natural water samples is generally difficult due to the presence of interfering species. Metals that were studied, Cu(II), Pb(II), Co(II), Ni(II) and Cd(II) are of environmental interest because of its intensive use, distribution, and as a consequence of its non - degradability can be accumulated in environmental matrices manifesting toxicity. In this project was developed a mesoporous silica as solid support for the anchoring of 4 - amino - 3 - hydrazin o - 5 - mercapto - 1,2,4 - triazole molecule to be applied in the adsorption/removal of metals from aqueous solution. The material was characterized by infrared spectroscopy (FTIR), which showed bands at 1649 and 1690 - 790 cm - 1, characteristic of NH bonds of prima ry amines, existing in molecule ligand. The nuclear magnetic resonance 13 C and 29 Si (NMR) confirm the anchoring of the ligand. Measurements of specific surface area by the BET method and pore diam eter resulted in an area of 795.51 ± 1. 14 m 2 g - 1 and pores i n a range from 1.1 to 7.1 nm. Scanning Electron Microscopy (SEM) showed that the material has spherical shape with sizes of approximately 10 μ m and the analysis by Energy Dispersive X - ray (EDX) showed a homogeneous distribution of silylant over material su rface. Thus, it was confirmed the occurrence of the modification reaction. The material was applied in adsorption studies to determine its maximum adsorption capacity, as well as studies of the influence of pH and kinetic studies on the balance process. Th e experiments were performed by the batch method. The first test was the pH PZC which indicates the best pH range (5 - 9) for the adsorption. Adsorption studies showed the best results when pH was near 6 and the adsorption equilibrium was attained after 50 mi nutes of stirring time. For all species investigated the adsorption process is better described...
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Books on the topic "Silicon atomic ions"

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United States. National Aeronautics and Space Administration., ed. Atomic data and spectral analysis of carbon, nitrogen, oxygen and silicon ions observed with the international ultraviolet explorer. [Columbus, Ohio]: Ohio State University, 1992.

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Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Pr, 1985.

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Hawkes, Peter W. Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1990.

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Hawkes, Peter W. Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1990.

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Hawkes, Peter W. Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1986.

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Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1991.

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Hawkes, Peter W. Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1985.

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Hawkes, Peter W. Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1987.

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Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1993.

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(Editor), Benjamin Kazan, ed. Advances in Electronics and Electron Physics (Advances in Imaging and Electron Physics). Academic Press, 1993.

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Book chapters on the topic "Silicon atomic ions"

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Bohme, Diethard K., Stanislaw Wlodek, and Arnold Fox. "Chemical Pathways from Atomic Silicon Ions to Silicon Carbides and Oxides." In Rate Coefficients in Astrochemistry, 193–200. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3007-0_12.

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Bohme, D. K., S. Wlodek, and A. Fox. "Laboratory Studies of Extraterrestrial Chemistry Initiated by Atomic Silicon Ions in the Gas Phase." In Experiments on Cosmic Dust Analogues, 239–44. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3033-9_23.

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Heslop, C. J. "Plasma Etching for Silicon Device Technology." In Erosion and Growth of Solids Stimulated by Atom and Ion Beams, 281–96. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4422-0_16.

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Chien, H. C., K. Srikanth, S. Ashok, and M. C. Chen. "Atomic Hydrogen Passivation Studies of Microcrystalline Phases in Ion-Implant Damaged Surface Layers of Silicon." In Springer Proceedings in Physics, 127–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_17.

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Pink, R. H., S. R. Badu, R. H. Scheicher, Lee Chow, M. B. Huang, and T. P. Das. "First-principles cluster study of electronic structures, locations and hyperfine interactions of isolated atoms and ions in silicon." In HFI / NQI 2010, 37–41. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-94-007-1269-0_9.

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Bunker, Bruce C., and William H. Casey. "Aqueous Polymerization of Silicates and Aluminosilicates." In The Aqueous Chemistry of Oxides. Oxford University Press, 2016. http://dx.doi.org/10.1093/oso/9780199384259.003.0022.

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Part Five of this book is devoted to silicates for several important reasons. First, silicates represent critical components of our planet and our lives. Silicon is the second most abundant element in Earth’s crust after oxygen, representing about 28% of the atoms present. As such, transformations of silicate minerals dominate much of the aqueous geochemistry of Earth. Every day, each of us encounters materials and objects the primary constituents of which are silicon oxides and related phases such as aluminosilicates. Granite facings on buildings, bricks, glass, pottery, ceramics, engineered materials used in water purification, catalysis, electronics, and even the optical fibers used in our most advanced communication systems are all silica based. Aluminosilicate minerals are even used as food additives. A key attribute of silicates that distinguishes them from most of the oxides highlighted in Parts One through Four of this book is that the Si(IV) cation is almost always present in a tetrahedral rather than in an octahedral coordination geometry. Exceptions include a few high-pressure phases such as stishovite (see Chapter 2) and a limited number of chelated Si(IV) complexes (see Section 14.3). The authors know of no stable compounds where Si(IV) is coordinated to only three oxygen atoms. The pathways for both forming and destroying silicate bonds are substantially different than for octahedral metal ions. Ligand-exchange pathways for silicate ions are via nucleophilic attack, where the coordination number increases in a transition state from four to five or even six (see Section 14.3 and Chapters 4 and 5). These contrast with pathways for octahedral metal ions, such as Al(III), where it is easier to decrease the coordination number from six to five or four in dissociative ligand exchange reactions. Of course, Si(IV) is not the only common element capable of forming tetrahedral oxide species. As outlined in Chapters 2 and 4, any cation with an ionic radius between roughly 0.03 nm and 0.055 nm can fit within the tetrahedral void between four close-packed oxygen anions, as expressed by Linus Pauling’s First Rule of coordination chemistry (see Chapter 2).
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Jolivet, Jean-Pierre. "Aluminum Oxides: Alumina and Aluminosilicates." In Metal Oxide Nanostructures Chemistry. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780190928117.003.0009.

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Aluminum is the third most abundant element in Earth’s crust (8.3% in mass), behind oxygen (45.5%) and silicon (27.2%). It forms in nature various oxygenated mineral phases: hydroxides Al(OH)3, oxyhydroxides AlOOH, of which bauxite is the main ore, and oxides, Al2O3, alumina. Corundum, α- Al2O3, is the component of many gems: sapphire (pure Al2O3, perfectly colorless), ruby (red colored due to the presence of Cr3+ ions), and blue sapphire (blue colored by the presence of Ti4+ and Fe2+ ions), among many others. The content of foreign elements substituted for Al3+ ions in these phases accounts for only a small percentage of the total. Aluminum also forms many natural phases in combination with various elements, especially silicon in aluminosilicates, such as feldspars, clays, zeolites, allophanes, and imogolites. The biochemical cycling of the elements involves many soluble complexes of aluminum in natural waters [1, 2]. Aluminum oxides and oxy(hydroxi)des are important materials and nanomaterials used in many fields: for instance, as active phase for adsorption in water treatment; as inert support and active phase in catalysis; as active phase in flame-retardant polymers; as refractory material for laboratory tools and in the ceramics industry; and as abrasives [3, 4]. Alumina Al2O3 is produced in various forms (tubes, balls, fibers, and powders) for numerous industrial uses (laboratory tools, filtration membranes, ball bearings, fine powders as catalysis supports, etc.). The structural chemistry of aluminum oxy(hydroxi)des is rich. There are various hydroxides, Al(OH)3 (gibbsite, also named hydrargillite, bayerite, and some other polytypes such as nordstrandite and doyleite), oxyhydroxides, AlOOH (boehmite and diaspore), and a series of oxides, Al2O3, so-called transition aluminas. These last phases have different degrees of hydration and different degrees of order of the Al3+ cations within the cubic close packing of oxygen atoms according to the temperature at which they have been submitted. They belong to various structural types (γ, δ, θ, η, κ, etc.). These aluminas of huge specific surface areas are usually used in catalysis, especially γ-alumina of spinel crystal structure.
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Wendler, E., B. Weber, W. Wesch, U. Zammit, and M. Marinelli. "LATTICE POSITION OF DISPLACED ATOMS IN BORON IMPLANTED SILICON." In Ion Beam Modification of Materials, 806–9. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50155-6.

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Glusker, Jenny Pickworth, and Kenneth N. Trueblood. "Micro- and noncrystalline materials." In Crystal Structure Analysis. Oxford University Press, 2010. http://dx.doi.org/10.1093/oso/9780199576340.003.0023.

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The crystalline state is characterized by a high degree of internal order. There are two types of order that we will discuss here. One is chemical order, which consists of the connectivity (bond lengths and bond angles) and stoichiometry in organic and many inorganic molecules, or just stoichiometry in minerals, metals, and other such materials. Some degree of chemical ordering exists for any molecule consisting of more than one atom, and the molecular structure of chemically simple gas molecules can be determined by gaseous electron diffraction or by high-resolution infrared spectroscopy. The second type of order to be discussed is geometrical order, which is the regular arrangement of entities in space such as in cubes, cylinders, coiled coils, and many other arrangements. For a compound to be crystalline it is necessary for the geometrical order of the individual entities (which must each have the same overall conformation) to extend indefinitely (that is, apparently infinitely) in three dimensions such that a three-dimensional repeat unit can be defined from diffraction data. Single crystals of quartz, diamond, silicon, or potassium dihydrogen phosphate can be grown to be as large as six or more inches across. Imagine how many atoms or ions must be identically arranged to create such macroscopic perfection! Sometimes, however, this geometrical order does not extend very far, and microarrays of molecules or ions, while themselves ordered, are disordered with respect to each other on a macroscopic scale. In such a case the three-dimensional order does not extend far enough to give a sharp diffraction pattern. The crystal quality is then described as “poor” or the crystal is considered to be microcrystalline, as in the naturally occurring clay minerals. On the other hand, in certain solid materials the spatial extent of geometrical order may be less than three-dimensional, and this reduced order gives rise to interesting properties. For example, the geometrical order may exist only in two dimensions; this is the case for mica and graphite, which consist of planar structures with much weaker forces between the layers so that cleavage and slippage are readily observed.
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Takahiro, K., H. Habasaki, S. Nagata, and S. Yamaguchi. "Behavior and chemical state of gold atoms implanted into silicon." In Laser and Ion Beam Modification of Materials, 413–16. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81994-9.50087-7.

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Conference papers on the topic "Silicon atomic ions"

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Xu, Dongyan, Deyu Li, Yongsheng Leng, and Yunfei Chen. "Molecular Dynamics Simulation of Water and Ion Profiles Near Charged (100) and (111) Silicon Surfaces." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52248.

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Fundamental studies in nanofluidics have attracted significant attention in the past decade since the success of nanofluidic devices depends on a thorough understanding of the fluidic, ionic, and molecular behaviors in highly confined nano-environments. In this work, molecular dynamics simulations of the effect of surface charge densities on the ion and water distribution in the near wall region has been performed for both (100) and (111) silicon surfaces. We demonstrate that surface charges not only interact with mobile ions in the electrolyte, but also interact with water molecules due to their polarizability and hence influence the orientation of water molecules close to the charged surface. It is shown that as the surface charge density increases, water molecules within ∼ 5 Å from the (100) silicon surface can evolve from one layer into two layers and meanwhile, the orientation of water molecules is more aligned instead of randomly distributed. However, no extra water layer is observed near a (111) silicon surface even under a surface charge density of as high as −0.2034 C/m2. The above phenomenon may be related to the different surface atom densities of (100) and (111) silicon surfaces.
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Wu, Xuan, Ranganathan Kumar, and Parveen Sachdeva. "Calculation of Thermal Conductivity in Nanofluids From Atomic-Scale Simulations." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-80849.

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Nanofluids that consist of nanometer sized particles and fibers dispersed in base liquids have shown the potential to enhance the heat transfer performance. Although three features of nanofluids including anomalously high thermal conductivities at very low nanoparticle concentrations, strongly temperature dependent thermal conductivity and significant increases in critical heat flux have been studied widely, and layering of liquid molecules at the particle-liquid interface, ballistic nature of heat transport in nanoparticles, and nanoparticle clustering are considered as the possible causations responsible for such kind of heat transfer enhancement, few research work from atomic-scale has been done to verify or explain those fascinating features of nanofluids. In this paper, a molecular dynamic model, which incorporates the atomic interactions for silica by BKS potential with a SPC/E model for water, has been established. To ensure the authenticity of our model, the position of each atom in the nanoparticle is derived by the crystallographic method. The interfacial interactions between the nanoparticle and water are simplified as the sum of interaction between many ions. Due to the electrostatic interaction, the ions on the nanoparticle’s surface can attract a certain number of water molecules, therefore, the effect of interaction between the nanoparticle and water on heat transfer enhancement in nanofluids is studied. By using Green-Kubo equations which set a bridge between thermal conductivity and time autocorrelation function of the heat current, a model which may derive thermal conductivity of dilute nanofluids that consist of silica nanoparticles and pure water is built. Several simulation results have been provided which can reveal the possible mechanism of heat enhancement in nanofluids.
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Han, C. S., Y. H. Yoon, Y. H. Shin, and J. W. Song. "Structural Modification of Carbon Nanotube Tip Using Focused Ion Beam." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-15545.

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We report the structural modification of carbon nanotube (CNT) tip for Atomic force microscopy (SPM) based on ion beam irradiation. In general, CNT tip assembled by dielectrophoresis would often have non-vertical angle, very crooked shape or too lengthy one. Therefore, these tips should be modified to the appropriate shape to use as an AFM tip. We found that the ion beam could contribute to merge the bundled CNTs, to make the CNT diameter uniform as well as to make the wavy shape of CNT straight. In addition, we could cut the free-standing CNT on a Si tip using focused ion beam (FIB). From the atomic force microscope (AFM) measurement of 15 nm gold particles and DNA molecules, we showed that the CNT tip modified by FIB produced high resolution images as well as little wear by comparing with those of a conventional silicon tip
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Yokota, Katsuhiro, Shuusaku Nakase, and Fumiyoshi Miyashita. "Effects of Hydrogen Atoms on Redistribution of Implanted Boron Atoms in Silicon during Annealing." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401468.

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Zhang, H. S., and K. Komvopoulos. "Anisotropic Frictional Behavior of Nanotextured Surfaces." In STLE/ASME 2008 International Joint Tribology Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/ijtc2008-71146.

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Silicon wafers were exposed to an oblique Ar+ ion beam to create arrays of surface ripples. Atomic force microscope (AFM) imaging revealed that the rippled (textured) surfaces exhibited highly anisotropic morphologies. Nanoscale friction experiments performed with different diamond tips illustrated a dependence of the coefficient of friction on tip radius, normal load, and sliding direction. Changes in the coefficient of friction are interpreted in terms of the applied normal load and varying contributions of the adhesion friction mechanism.
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Tsuji, Hiroshi, Nobutoshi Arai, Naoyuki Gotoh, Takashi Minotani, Toyotsugu Ishibashi, Tetsuya Okumine, Kouichiro Adachi, Hiroshi Kotaki, Yasuhito Gotoh, and Junzo Ishikawa. "Thermal Diffusion Barrier for Ag Atoms Implanted in Silicon Dioxide Layer on Silicon Substrate and Monolayer Formation of Nanoparticles." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401516.

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Phinney, Leslie M., Bonnie B. McKenzie, James A. Ohlhausen, Thomas E. Buchheit, and Randy J. Shul. "Characterization of SOI MEMS Sidewall Roughness." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-62593.

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Deep reactive ion etching (DRIE) of silicon enables high aspect ratio, deep silicon features that can be incorporated into the fabrication of microelectromechanical systems (MEMS) sensors and actuators. The DRIE process creates silicon structures and consists of three steps: conformal polymer deposition, ion sputtering, and chemical etching. The sequential three step process results in sidewalls with roughness that varies with processing conditions. This paper reports the sidewall roughness for DRIE etched MEMS as a function of trench width from 5 μm to 500 μm for a 125 μm thick device layer corresponding to aspect ratios from 25 to 0.25. Using a scanning electron microscope (SEM), the surfaces were imaged detecting an upper region exhibiting a scalloping morphology and a rougher lower region exhibiting a curtaining morphology. The height of rougher curtaining region increases linearly with aspect ratio when the etch cleared the entire device layer. The surface roughness for two trench widths: 15 μm and 100 μm were further characterized using an atomic force microscope (AFM), and RMS roughness values are reported as a function of height along the surface. The sidewall roughness varies with height and depends on the trench width.
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Zhuang, Yan Xin, and Aric K. Menon. "Fluorocarbon Films Deposited by Deep Reactive Ion Etching for Stiction Minimization of MEMS Structures." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63204.

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Fluorocarbon films, which can be used to minimize stiction of silicon microstructures, have been deposited by passivation process in deep reactive ion etching tool. The wettability, surface energy, nano-scale adhesive force, and thermal stability have been investigated by contact angle measuring system, atomic force microscopy (AFM) and ellipsometry. The fluorocarbon films are good for anti-stiction applications due to their high water contact angle (110°), low surface energy (14.5mJ/m2), low nano-scale adhesive force (33 nN) and high thermal stability up to 300°C.
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Qiu, Yinghua, Qiyan Tan, Weichuan Guo, and Yunfei Chen. "The Effects of Ions and Surface Charge Density on Water Distribution in Silicon Nanochannel." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87190.

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Water distributions are obtained in the silicon nanochannels filled with NaCl solution and pure water with molecular dynamics simulation, respectively. Taking into account the reality at the solid-liquid interface, the silicon atoms of channel walls in the model are allowed to vibrate at their own equilibrium positions. Results show that: The water distribution vertical to the channel wall changes notably due to the introduction of Na+ ions and Cl− ions. In pure water case, there are three water aggregation peaks within 0.4nm from surface, in contrast to two in NaCl solution case. Also, the locations and values of the corresponding peaks alter except the first one. However, the water distribution for NaCl solution beyond 0.5nm shares the same trend with that in pure water and the water molecules alignments in the first layer have almost the same trend in the two cases. Furthermore, in pure water system, the influence range of surface charge is 0.55nm and with surface charge density increasing, the first concentration peak changes into three ones within 0.4nm perpendicular to the surface and the water molecules in the first water layer align more orderly.
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Krasnoborodko, S. Yu, Yu E. Vysokikh, M. F. Bulatov, D. V. Churikov, S. A. Smagulova, and V. I. Shevyakov. "Defocused Ion Beam Etching of the Silicon Probes for High Resolution Atomic-force Microscopy." In 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring). IEEE, 2019. http://dx.doi.org/10.1109/piers-spring46901.2019.9017274.

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Reports on the topic "Silicon atomic ions"

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Caturla, M., M. Johnson, T. Lenosky, B. Sadigh, S. K. Theiss, J. Zhu, and T. D. de la Rubia. Atomic scale models of Ion implantation and dopant diffusion in silicon. Office of Scientific and Technical Information (OSTI), March 1999. http://dx.doi.org/10.2172/12209.

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Miller, M. (Atom probe field-ion microscopy research on silicon carbide whiskers and evaluate the position sensitive atom probe). Office of Scientific and Technical Information (OSTI), October 1988. http://dx.doi.org/10.2172/5412227.

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