Journal articles: 'Silicon atomic ions'

1

Ham, NS, and T. McAllister. "Flame Ionization of Silicon, Germanium and Tin." Australian Journal of Chemistry 38, no. 3 (1985): 347. http://dx.doi.org/10.1071/ch9850347.

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.When compounds of Si , Ge and Sn are added to 2/C6H6 diffusion flames, ions characteristic of the elements are detected in the burnt gases by mass spectrometry. The ions, which are attributed to charge exchange and proton transfer reactions of H3O+, may be divided into three categories, atomic ions, protonated monoxides and protonated oxyacids . Sn gives atomic ions and protonated monoxides, a similar result to Pb , but neither Si nor Ge give atomic ions. This may be a consequence of the lack of Si and Ge atoms in the burnt gases. Ge and Sn give a protonated monoxide, but Si does not. This observation leads to the suggestion that proton affinities of the Group 4a monoxides are in the order CO, SiO < H2O < GeO , SnO , PbO. Protonated silicic and germanic acids are observed in the burnt gases of Si - and Ge -containing flames, but no oxyacids were observed in Sn -or Pb -containing flames. This indicates that the proton affinities of both acids are greater than that of H2O.

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Bohme, Diethard K. "Chemistry initiated by atomic silicon ions in the gas phase: formation of silicon-bearing ions and molecules." International Journal of Mass Spectrometry and Ion Processes 100 (October 1990): 719–36. http://dx.doi.org/10.1016/0168-1176(90)85105-b.

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Nagy, Péter M., P. Horváth, Gábor Pető, and Erika Kálmán. "Nanoindentation of Silicon." Materials Science Forum 604-605 (October 2008): 29–36. http://dx.doi.org/10.4028/www.scientific.net/msf.604-605.29.

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The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.

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Liu, Yao, Zhongtao Ouyang, Li Yang, Yang Yang, and Jiaming Sun. "Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon." Nanomaterials 9, no. 3 (March 11, 2019): 413. http://dx.doi.org/10.3390/nano9030413.

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Realization of a silicon-based light source is of significant importance for the future development of optoelectronics and telecommunications. Here, nanolaminate Al2O3/Tm2O3 films are fabricated on silicon utilizing atomic layer deposition, and intense blue electroluminescence (EL) from Tm3+ ions is achieved in the metal-oxide-semiconductor structured luminescent devices based on them. Precise control of the nanolaminates enables the study on the influence of the Tm dopant layers and the distance between every Tm2O3 layer on the EL performance. The 456 nm blue EL from Tm3+ ions shows a maximum power density of 0.15 mW/cm2. The EL intensities and decay lifetime decrease with excessive Tm dopant cycles due to the reduction of optically active Tm3+ ions. Cross-relaxation among adjacent Tm2O3 dopant layers reduces the blue EL intensity and the decay lifetime, which strongly depends on the Al2O3 sublayer thickness, with a critical value of ~3 nm. The EL is attributed to the impact excitation of the Tm3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism.

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BOHME, D. K. "ChemInform Abstract: Chemistry Initiated by Atomic Silicon Ions in the Gas Phase: Formation of Silicon-Bearing Ions and Molecules." ChemInform 22, no. 18 (August 23, 2010): no. http://dx.doi.org/10.1002/chin.199118299.

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SINHA, O. P., P. C. SRIVASTAVA, and V. GANESAN. "MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES." Surface Review and Letters 11, no. 03 (June 2004): 265–69. http://dx.doi.org/10.1142/s0218625x04006177.

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The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

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Щербаков, И. П., and А. Е. Чмель. "Сравнительный фотолюминесцентный анализ точечных дефектов в SiO-=SUB=-2-=/SUB=-, индуцированных имплантацией ионов Ar-=SUP=-+-=/SUP=- и облучением нейтронами." Письма в журнал технической физики 45, no. 5 (2019): 24. http://dx.doi.org/10.21883/pjtf.2019.05.47392.17610.

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AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).

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Dixon Northern, B. L., Y. L. Chen, J. N. Israelachvili, and J. A. N. Zasadzinski. "Atomic force microscopy of mica surface after ion replacement." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 628–29. http://dx.doi.org/10.1017/s0424820100087458.

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Atomic Force Microscope (AFM), is the newest, and potentially most powerful of the scanning probe microscopes. The (AFM) is capable of resolutions approaching atomic dimensions on ideal surfaces. One of the favorite such surfaces is that of mica. Muscovite mica has a platelike structure consisting of an octahedral alumina sheet sandwiched by two tetrahedral silicate sheets. As a result of this structure, mica cleaves readily along a plane leaving a molecularly smooth surface. Because of the isomorphous substitution of the tetravalent silicon by trivalent aluminium, mica has an excess negative surface charge.This negative surface charge of 2.1-1014 charges per cm2 is neutralized by an equal number of positive monovalent ions, mainly potassium ions. The ion-exchangable surface ions of mica, in aqueous solution, can be readily replaced by other monovalent or multivalent ions. This ion exchange alters the surface of the mica. We then follow these changes by imaging with the AFM in air.

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9

Insepov, Zeke, Ardak Ainabayev, Kumiszhan Dybyspayeva, Abat Zhuldassov, Sean Kirkpatrick, Micheal Walsh, and Anatoly F. Vyatkin. "Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions." MRS Advances 1, no. 20 (2016): 1417–22. http://dx.doi.org/10.1557/adv.2016.205.

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ABSTRACTDefect formation in the samples of graphene, graphene oxide and silicon irradiated with Ar cluster and highly-charged ion irradiations were studied. Ar cluster ions, with acceleration energy E = 30 kV (Exogenesis nAccel00, Boston, USA) and total Ar cluster ion fluences ranged from 1x109cm-2to 1x1013cm-2were directed toward various surfaces. Highly-charged ions (HCI) bombardment on surfaces with highly charged Xeq+(q= 22) was employed at Eurasian National University, Kazakhstan, using a DC-60 cyclotron accelerator. Multi-layer graphene oxide, single-layer graphene- (SLG), few-layer of graphene (FLG) and polished Si are used for irradiation experiments. The study of irradiated samples was conducted by Raman spectroscopy, atomic force microscopy (AFM). Uniformly distributed defects and craters were observed on the surfaces of graphene, graphene oxide and silicon irradiated with cluster and HCI beams in our experiments. Ab-initio density-functional theory (DFT) was used to study point defects and molecular-dynamics (MD) simulations were used for studying formation of craters due to gas cluster ion impacts in graphene. The results of simulations were compared with experimental craters and surface shape.

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Bacchus-Montabonel, M. C. "Recombination of silicon ions by electron capture from atomic hydrogen and helium." Theoretical Chemistry Accounts: Theory, Computation, and Modeling (Theoretica Chimica Acta) 104, no. 3-4 (July 21, 2000): 296–301. http://dx.doi.org/10.1007/s002140000120.

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11

Leblanc, D., J. P. Denhez, and H. E. Audier. "Gas-Phase Reaction of Acetaldehyde with Silicon-Containing Ions." European Journal of Mass Spectrometry 7, no. 4-5 (August 2001): 343–49. http://dx.doi.org/10.1255/ejms.444.

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CH2=Si(CH3)OSi(CH3)2+ ions 1 were formed in the external source of a Fourier-transform ion cyclotron resonance (FT-ICR)mass spectrometer by fragmentation of (CH)3SiOSi(CH3)3. In the cell, their reactions with acetaldehyde were studied by using labeled reactants and compared with those with acetone, studied in previous work, which gives a general view of the reactions of ion 1 with carbonyl compounds. In contrast with the behavior of the corresponding carbon-containing ions, the results confirm facile 1,3-methyl group transfers from silicon to silicon. Otherwise, the silicon-containing adducts often eliminate C nH2 n. This process, not observed in (C,O,H)-containing ions, is studied by using selectively deuterated reactants.

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12

Saha, B., T. K. Mukherjee, A. K. Das, and P. K. Mukherjee. "Allowed transitions in silicon isoelectronic ions." International Journal of Quantum Chemistry 91, no. 5 (2003): 626–32. http://dx.doi.org/10.1002/qua.1101.

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13

Иешкин, А. Е., А. Б. Толстогузов, C. Е. Свяховский, М. Н. Дроздов, and В. О. Пеленович. "Экспериментальное наблюдение эффекта ограничения каскада столкновений при распылении пористого кремния." Письма в журнал технической физики 45, no. 2 (2019): 39. http://dx.doi.org/10.21883/pjtf.2019.02.47222.17563.

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AbstractResults of investigation of the mass spectra of secondary ions sputtered from bulk (continuous) and porous silicon targets with various characteristic core particle dimensions are presented. It has been established that the sputtering of nanostructured Si samples leads to a significant increase in the relative yield of massive cluster ions. This effect is especially pronounced when the characteristic nanoparticle size approaches the range of bombarding ions in the Si target. The obtained results are explained taking into account the confinement of atomic collision cascades.

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14

Myers, Edmund. "High-Precision Atomic Mass Measurements for Fundamental Constants." Atoms 7, no. 1 (March 18, 2019): 37. http://dx.doi.org/10.3390/atoms7010037.

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Atomic mass measurements are essential for obtaining several of the fundamental constants. The most precise atomic mass measurements, at the 10−10 level of precision or better, employ measurements of cyclotron frequencies of single ions in Penning traps. We discuss the relation of atomic masses to fundamental constants in the context of the revised SI. We then review experimental methods, and the current status of measurements of the masses of the electron, proton, neutron, deuteron, tritium, helium-3, helium-4, oxygen-16, silicon-28, rubidium-87, and cesium-133. We conclude with directions for future work.

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15

Lamichhane, SK. "Morphology and AFM Spectroscopy of Irradiated Interface of Silicon." Nepal Journal of Science and Technology 14, no. 2 (May 15, 2014): 155–60. http://dx.doi.org/10.3126/njst.v14i2.10430.

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In covalent solids, more energetic irradiation sources are necessary to produce detectable level of damage. The atomic force microscopic (AFM) studies of mega electron-volt (MeV) ions irradiated silicon surfaces have been studied to a fluence of 5×108 ions cm-2 and surface morphology has been studied with AFM. Interesting features of cracks of ~ 50 nm in depth and ~ 100 nm in width have been observed on the irradiated surface. The features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface. The observed feature of cracks seems to be mainly due to the high electronic energy loss of the irradiated ions on the surface induces the stress in it. It confirms that the coarseness of the microstructure of a material directly affects the mechanical properties. DOI: http://dx.doi.org/10.3126/njst.v14i2.10430 Nepal Journal of Science and Technology Vol. 14, No. 2 (2013) 155-160

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16

Intarasiri, S., Anders Hallén, A. Razpet, Somsorn Singkarat, and G. Possnert. "Ion Beam Synthesis of Silicon Carbide." Solid State Phenomena 107 (October 2005): 51–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.51.

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Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (1 0 0) high-purity p-type silicon substrate at room temperature and 400 oC, respectively, using doses in excess of 1017 ions/cm2. Elastic recoil detection analysis (ERDA) technique, developed for routine atomic depth profiling at the Angstrom laboratory, Uppsala University, Sweden, was used to investigate the depth distributions of implanted-ions. Infrared transmittance measurement was used as an indication of SiC in the implanted Si substrate. For the samples implanted at high temperature, the results show the existence of a peak at 797 cm-1, indicating the presence of β-SiC, already directly formed during the implantation without postimplantation annealing. While for the samples implanted at room temperature, starting with the band of amorphous Si-C network, the crystalline SiC appears at the annealing temperature as low as 900 oC. In both cases, during further annealing in vacuum, the peak grows in height and narrows in width (according to the measured FWHM) with increasing annealing temperature, indicating a further growth of the SiC layer. However, for thermal annealing at 1000 oC in a vacuum furnace the SiC crystallization was not completed and crystal imperfection where still present. Complementary to IR, Raman scattering measurements were performed. Although no direct evidence of SiC vibrations were observed, the appearance and disappearance of both Si-Si and C-C related bands points out to the formation of silicon and carbon clusters in the implanted layer.

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17

Tsong, Tien T., Chong-lin Chen, and Jiang Liu. "Atom-probe field ion microscope analysis of surfaces of materials." Journal of Materials Research 4, no. 6 (December 1989): 1549–59. http://dx.doi.org/10.1557/jmr.1989.1549.

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Our recent applications of the atom-probe field ion microscope to the study of physics and chemistry of materials at the atomic level are summarized. The materials applicability of field ion microscopy has recently been extended to silicon, silicide, graphite, high Tc superconductors, and other materials. Atom-probe field ion microscopy has been used for atomic layer by atomic layer chemical analysis of surfaces in alloy and impurity segregations, for analyzing the compositional changes across metal-semiconductor interfaces, and for studying formation of cluster ions in laser stimulated field desorption. The energetics of atoms in solids and on surfaces can be studied by a direct kinetic energy analysis of field desorbed ions using a high resolution pulsed-laser time-of-flight atom-probe and by other field ion microscope measurements. The site specific binding energy of surface atoms can be measured at low temperature, where the atomic structure of the surface is still perfectly defined, to an accuracy of about 0.1 to 0.3 eV.

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Yadav, A. R., S. K. Dubey, R. L. Dubey, N. Subramanyam, and I. Sulania. "Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions." International Journal of Nanoscience 19, no. 03 (November 29, 2019): 1950019. http://dx.doi.org/10.1142/s0219581x19500194.

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Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimum fluence condition for formation of intersubband of SiGaAs in GaAs sample after implantation with 50[Formula: see text]keV silicon negative ions with fluences varying between [Formula: see text] and [Formula: see text] ions cm[Formula: see text]. The GaAs samples were investigated using X-ray photoelectron spectroscopy (XPS), UV-Vis.-NIR spectroscopy and X-ray diffraction (XRD) techniques. The X-ray photoelectron spectra for unimplanted sample showed peaks at binding energy of 18.74[Formula: see text]eV and 40.74[Formula: see text]eV indicating Ga3d and As3d core level, whereas the corresponding core level peaks for implanted sample were observed at binding energy of 19.25[Formula: see text]eV and 41.32[Formula: see text]eV. The shift in Ga3d and As3d core levels towards higher binding energy side in the implanted sample with respect to unimplanted sample were indicative of change in chemical state environment of Ga–As bond. The relative atomic percentage concentration of elemental composition measured using casa XPS software showed change in As/Ga ratio from 0.89 for unimplanted sample to 1.13 for sample implanted with the fluence of [Formula: see text] ion cm[Formula: see text]. The UV-Vis-NIR spectra showed absorption band between 1.365[Formula: see text]eV and 1.375[Formula: see text]eV due to the formation of intersubband of SiGaAs for fluences greater than [Formula: see text] ion cm[Formula: see text]. The GaAs crystallite size calculated using Brus formula was found to vary between 162[Formula: see text]nm and 540[Formula: see text]nm, respectively. The XRD spectra showed the presence of Bragg’s peak at 53.98∘ indicating (311) silicon reflection. The silicon crystallite size determined from full width at half maxima (FWHM) of (311) XRD peak was found to vary between 110[Formula: see text]nm and 161[Formula: see text]nm, respectively.

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Kumar, Pravin, Udai Bhan Singh, Kedar Mal, Sunil Ojha, Indra Sulania, Dinakar Kanjilal, Dinesh Singh, and Vidya Nand Singh. "Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses." Beilstein Journal of Nanotechnology 5 (October 24, 2014): 1864–72. http://dx.doi.org/10.3762/bjnano.5.197.

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We report the synthesis of Pt nanoparticles and their burrowing into silicon upon irradiation of a Pt–Si thin film with medium-energy neon ions at constant fluence (1.0 × 1017 ions/cm2). Several values of medium-energy neon ions were chosen in order to vary the ratio of the electronic energy loss to the nuclear energy loss (S e/S n) from 1 to 10. The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). A TEM image of a cross section of the film irradiated with S e/S n = 1 shows ≈5 nm Pt NPs were buried up to ≈240 nm into the silicon. No silicide phase was detected in the XRD pattern of the film irradiated at the highest value of S e/S n. The synergistic effect of the energy losses of the ion beam (molten zones are produced by S e, and sputtering and local defects are produced by S n) leading to the synthesis and burrowing of Pt NPs is evidenced. The Pt NP synthesis mechanism and their burrowing into the silicon is discussed in detail.

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20

Nunes, Bruno, Sergio Magalhães, Nuno Franco, Eduardo Alves, Ana Paula Serro, and Rogerio Colaço. "Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation." Materials Science Forum 730-732 (November 2012): 257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.730-732.257.

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Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences of iron ions (up to 2x1017 cm-2). Implantation was followed by annealing treatments at temperatures from 550°C to 1000°C. The implanted surfaces were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and wettability tests. Then, samples were submitted to AFM-based nanowear tests. We observe an increase of both hidrophobicity and and wear resistance of the implanted silicon, indicating that ion implantation of Si can be a route to be deeper explored in what concerns tribomechanical improvement of Si.

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Kumar, Ajay, A. N. Agnihotri, D. Misra, S. Kasthurirangan, L. Sarkadi, and L. C. Tribedi. "L3subshell alignment in bismuth induced by swift silicon ions." Journal of Physics B: Atomic, Molecular and Optical Physics 48, no. 6 (March 4, 2015): 065202. http://dx.doi.org/10.1088/0953-4075/48/6/065202.

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22

Kaur, Jagjit, T. W. Gorczyca, and N. R. Badnell. "Dielectronic recombination data for dynamic finite-density plasmas." Astronomy & Astrophysics 610 (February 2018): A41. http://dx.doi.org/10.1051/0004-6361/201731243.

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Context.We aim to present a comprehensive theoretical investigation of dielectronic recombination (DR) of the silicon-like isoelectronic sequence and provide DR and radiative recombination (RR) data that can be used within a generalized collisional-radiative modelling framework.Aims.Total and final-state level-resolved DR and RR rate coefficients for the ground and metastable initial levels of 16 ions between P+and Zn16+are determined.Methods.We carried out multi-configurational Breit-Pauli DR calculations for silicon-like ions in the independent processes, isolated resonance, distorted wave approximation. Both Δnc= 0 and Δnc= 1 core excitations are included usingLSand intermediate coupling schemes.Results.Results are presented for a selected number of ions and compared to all other existing theoretical and experimental data. The total dielectronic and radiative recombination rate coefficients for the ground state are presented in tabulated form for easy implementation into spectral modelling codes. These data can also be accessed from the Atomic Data and Analysis Structure (ADAS) OPEN-ADAS database. This work is a part of an assembly of a dielectronic recombination database for the modelling of dynamic finite-density plasmas.

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Belova, N. E., S. G. Shemardov, S. S. Fanchenko, E. A. Golovkova, and O. A. Kondratev. "Implantation of Silicon Ions into Sapphire: Low Doses." Semiconductors 54, no. 8 (August 2020): 912–15. http://dx.doi.org/10.1134/s1063782620080060.

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Chen, Zhandong, Qiang Wu, Ming Yang, Baiquan Tang, Jianghong Yao, Romano A. Rupp, Yaan Cao, and Jingjun Xu. "Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases." Laser and Particle Beams 31, no. 3 (August 6, 2013): 539–45. http://dx.doi.org/10.1017/s0263034613000281.

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AbstractGeneration and evolution of plasma during femtosecond laser ablation of silicon are studied by steady-state and time-resolved spectroscopy in air, N2, SF6, and under vacuum. The plasma is generated faster than 200 ps (time resolution of our experiment) after excitation and mainly contains atoms and monovalent ions of silicon. Time-resolved spectra prove that silicon ions are faster than the silicon atoms which may be attributed to Coulomb repulsion and a local electric field when they are ejected from the silicon surface. During plasma evolution, ambient gas causes a confinement effect that enhances the dissociation of ambient gas molecules and the re-deposition of the removed material and leads to higher intensity and longer lifetime of the emission spectra. In SF6, a chemical reaction increases the plasma density and weakens the re-deposition effect. The different processes during plasma evolution strongly influence microstructure formation.

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Соболев, Н. А., А. Е. Калядин, В. И. Сахаров, И. Т. Серенков, Е. И. Шек, Е. О. Паршин, Н. С. Мелесов, and С. Г. Симакин. "Дислокационная фотолюминесценция в кремнии, имплантированном ионами германия." Физика и техника полупроводников 53, no. 2 (2019): 165. http://dx.doi.org/10.21883/ftp.2019.02.47093.8965.

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AbstractThe influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-energy ions demonstrates that implantation with 1-MeV germanium ions at a dose of 1 . 5 × 10^14 cm^–2 does not lead to the amorphization of single-crystal silicon. It is found that subsequent high-temperature annealing of the implanted samples in a chlorine-containing atmosphere at a temperature of 1100°C for 0.5–1.5 h gives rise to so-called D1 and D2 dislocation-related luminescence lines with wavelengths of 1.54 and 1 . 42 μm. With increasing annealing duration, the intensity of the D1 line decreases and that of D2 remains constant, but the D1 line dominates in all the spectra. The possible factors responsible for a decrease in the intensity of the D1 line and, in particular, the diffusion of germanium atoms and the formation of a silicon–germanium solid solution are discussed.

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Fitting, Hans Joachim, L. Fitting Kourkoutis, R. Salh, E. V. Kolesnikova, M. V. Zamoryanskaya, A. von Czarnowski, and Bernd Schmidt. "Silicon Cluster Aggregation in Silica Layers." Solid State Phenomena 156-158 (October 2009): 529–33. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.529.

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Scanning transmission electron microscopy (STEM) in combination with electron energy loss spectroscopy (EELS) and cathodoluminescence (CL) have been used to investigate Si+-implanted amorphous silicon dioxide layers and the formation of Si nanoclusters. The microstructure of the Si doped silica films was studied by energy filtered transmission electron microscopy (EFTEM) in a 200 kV FEI Tecnai F20 TEM. The samples were amorphous, thermally grown 500 nm SiO2 layers on Si substrate doped by Si+ ions with an energy of 150 keV up to an atomic dopant fraction of about 4 at%. A thermal post-annealing leads to formation of silicon clusters with sizes 1-5 nm and concentrations of about 1018 cm-3. Respective cathodoluminescence spectra in the near IR region indicate such structural changes by appearance of an additional band at 1.35 eV as well as additional emission bands in the visible green-yellow region.

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Begemann, W., R. Hector, Y. Y. Liu, J. Tiggesb�umker, K. H. Meiwes-Broer, and H. O. Lutz. "Sputtered metal and silicon cluster ions: collision-induced fragmentation and neutralization." Zeitschrift f�r Physik D Atoms, Molecules and Clusters 12, no. 1-4 (March 1989): 229–33. http://dx.doi.org/10.1007/bf01426944.

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Тужилкин, М. С., П. Г. Беспалова, М. В. Мишин, И. Е. Колесников, К. В. Карабешкин, П. А. Карасев, and А. И. Титов. "Формирование наночастиц Au и особенности травления подложки Si после облучения атомарными и молекулярными ионами." Физика и техника полупроводников 54, no. 1 (2020): 90. http://dx.doi.org/10.21883/ftp.2020.01.48782.9222.

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Formation of metal nanoparticles on silicon substrate by thin gold film irradiation with accelerated atomic and molecular ions is shown. Structures obtained were etched by metal-assisted catalytic chemical technique to get porous silicon structure. Size of gold nanoparticles and the structure of porous siliconstrongly depend on kind of incident species and ion dose. A local increase in the energy release density at the target surface that takes place during molecular ion bombardment significantly reduce the doses required for the formation of predetermined film morphology and the distribution of nanoparticles on the surface, while at the same time molecules exhibit lower radiation effect on the substrate. Luminescent properties of porous silicon do not depend on the kind of ion used, and can be tuned by composition of an etching solution

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Eštoková, Adriana, Martina Kovalcikova, and Alena Luptáková. "Deterioration of Cement Composites with Silica Fume Addition due to Chemical and Biogenic Corrosion Processes." Solid State Phenomena 227 (January 2015): 190–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.227.190.

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The paper is aimed at comparative study of resistance of Portland cement composites with addition of silica fume as durability increasing factor in various aggressive environments (sulphuric acid with pH 4, the medium of activated bacteria and the cultivating medium without bacteria) during 150 days under model laboratory conditions. Experimental studies confirmed: the leaching of silicon ions calculated to 1 g of concrete sample affected with bacteriaAcidithiobacillusthiooxidanswas 2.5 times lower (31.78 mg/g of sample) for concrete sample with silica fume addition comparing to concrete sample of ordinary CEM I Portland cement without any additives (82.98 mg/g of sample). The highest concentration of calcium ions released (60.808 mg/g of sample) was observed for reference sample without silica fume addition placed in the cultivating medium. Silica fume based concrete samples were found to have better performance in terms of calcium ions leaching for all environments and silicon ions leaching.

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Yassievich, I. N., A. S. Moskalenko, and A. A. Prokofiev. "Microscopic theory for excitation of erbium ions via silicon nanocrystals in silicon dioxide." Optical Materials 28, no. 6-7 (May 2006): 810–14. http://dx.doi.org/10.1016/j.optmat.2005.09.056.

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31

Lee, Jung Ho, Ji Hong Kim, Kang Min Do, Byung Moo Moon, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, and Sang Mo Koo. "GaZnO as a Transparent Electrode to Silicon Carbide." Materials Science Forum 717-720 (May 2012): 849–52. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.849.

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The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

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32

Белова, Н. Е., С. Г. Шемардов, С. С. Фанченко, Е. А. Головкова, and О. А. Кондратьев. "Имплантация ионов кремния в сапфир: малые дозы." Физика и техника полупроводников 54, no. 8 (2020): 766. http://dx.doi.org/10.21883/ftp.2020.08.49648.9405.

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As a result of ion implantation of silicon ions in sapphire and subsequent high-temperature annealing the precipitates of silicon and alumosilicates are observed in the subsurface sapphire region. X-ray reciprocal space mapping measurements showed the existence of compression stress with deformation -0.12% in the normal direction and tensile stress with deformation 0.2% in R-plane in that region, which reduces the mismatch with the silicon (100) lattice and can lead to an improvement in the structural perfection of epitaxial silicon films grown on such modified sapphire substrates.

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33

Zhigunov, D. M., O. A. Shalygina, S. A. Teterukov, V. Yu Timoshenko, P. K. Kashkarov, and M. Zacharias. "Photoluminescence of erbium ions in heterostructures with silicon nanocrystals." Semiconductors 40, no. 10 (October 2006): 1193–97. http://dx.doi.org/10.1134/s1063782606100125.

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34

Sobolev, N. A., A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. O. Parshin, N. S. Melesov, and C. G. Simakin. "Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions." Semiconductors 53, no. 2 (February 2019): 156–59. http://dx.doi.org/10.1134/s1063782619020234.

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35

Sobolev, N. A., Kalyadin, R. N. Kyutt, Elena I. Shek, and V. I. Vdovin. "Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence." Solid State Phenomena 156-158 (October 2009): 573–78. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.573.

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Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

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36

Кожемяко, А. В., А. П. Евсеев, Ю. В. Балакшин, and А. А. Шемухин. "Особенности дефектообразования в наноструктурированном кремнии при ионном облучении." Физика и техника полупроводников 53, no. 6 (2019): 810. http://dx.doi.org/10.21883/ftp.2019.06.47734.9050.

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Irradiations of the nanostructured silicon with Si+ and He+ ions were carried out with energies of 200 and 150 keV, respectively. Raman scattering showed destruction of the structure after irradiations and accumulation of defects at different fluences of irradiation. It is shown that monocrystalline silicon films are amorphized under irradiation at 0.7 displacement per atom. However, porous silicon does not completely amorphize at 0.5 displacement per atom, a weak signal is observed in the Raman spectra corresponding to the amorphous silicon phase, and at the same time there is an obvious signal from the crystalline phase of silicon. The size of nanocrystallites in the structure of porous silicon was estimated at different fluences of irradiation.

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Комолов, А. С., Э. Ф. Лазнева, Н. Б. Герасимова, В. С. Соболев, Ю. А. Панина, С. А. Пшеничнюк, and Н. Л. Асфандиаров. "Атомный состав и морфология тонких пленок ресвератрола на поверхности окисленного кремния и поликристаллического золота." Физика твердого тела 61, no. 3 (2019): 598. http://dx.doi.org/10.21883/ftt.2019.03.47257.161.

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AbstractThe atomic composition of films of a polyphenol antioxidant, namely, resveratrol (RVL), with a thickness of up to 50 nm thermally deposited on an oxidized silicon surface is studied by the method of X-ray photoelectron spectroscopy (XPS). It is found that the surface area of pores in the RVL film is about 15% of the total surface area. The results of studying the stability of the RVL films when their surface is treated with Ar^+ ions of 3 keV under the electric current of 1 μA passing through the sample for 30 s are given. The treatment gives rise to an increase in the area of pores to 30–40%, while the ratio of the concentration of C atoms to the concentration of O atoms in the RVL film both before and after the treatment of the surface with ions does not correspond to the chemical formula of RVL molecules. Using the method of atomic force microscopy (AFM) in contact mode with a scanning area size of about 10 × 10 μm, RVL coatings deposited on the oxidized silicon and polycrystalline Au surfaces are studied. It is found that the RVL films produce grainy and porous coatings on the substrate surfaces. The typical size of grains in the sample surface plane is 150–300 nm, and the characteristic elevation reaches 30 nm.

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38

Voronkov, Vladimir V. "Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon." Advances in Materials Science and Engineering 2018 (October 11, 2018): 1–8. http://dx.doi.org/10.1155/2018/2385438.

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In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilibrium dissociation constant of the HB defect, the passivated boron). A good fit is possible only assuming two independent kinds of H+—one of a larger value of D+K and the other—of a smaller value. A concept of two independent atomic subsystems H(1) and H(2), each involving both positive and neutral charge states, is also useful to account for hydrogen pairing into dimers.

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Ozutsumi, K., and H. Ohtaki. "Application of a compact synchrotron radiation facility to studies on the structure of solvated chloride and iodide ions in various solvents." Pure and Applied Chemistry 76, no. 1 (January 1, 2004): 91–96. http://dx.doi.org/10.1351/pac200476010091.

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A beamline equipped on the compact superconductive synchrotron radiation (SR) facility at Ritsumeikan University was designed for performing extended X-ray absorption fine structure (EXAFS) analyses of solutions and solids. The introduction of three different crystals, Si(220), Ge(220), and InSb(111), as the monochromator of the EXAFS spectrometer covers the K-edge absorption energy range of elements with low atomic numbers from silicon (atomic number 14) through zinc (30). The LIII-edge of the iodide ion could be measured by Si(220) and Ge(220). It is, however, not possible to measure the absorption of the bromide ion with this equipment. Using this spectrometer, the solvation structure of Cl- and I- ions was investigated in water, methanol, and ethanol under atmospheric pressure.

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40

Соболев, Н. А., О. В. Александров, В. И. Сахаров, И. Т. Серенков, Е. И. Шек, А. Е. Калядин, Е. О. Паршин, and Н. С. Мелесов. "Влияние температуры отжига на электрически активные центры в кремнии, имплантированном ионами германия." Физика и техника полупроводников 53, no. 2 (2019): 161. http://dx.doi.org/10.21883/ftp.2019.02.47092.8977.

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AbstractThe implantation of Czochralski-grown p -type silicon with 1-MeV germanium ions at a dose of 2 . 5 × 10^14 cm^–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.

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41

Polek, M., and A. Hassanein. "Dependence of silicon ablation regimes on fluence during ultrafast laser irradiation." Laser and Particle Beams 34, no. 1 (January 7, 2016): 143–50. http://dx.doi.org/10.1017/s0263034615001044.

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AbstractModels and experiments were developed to study femtosecond laser ablation of silicon using 800 nm, 40 fs pulses with fluences ranging from 0.5 to 35 J/cm2. At low fluences, ablation was found to occur due to bubble formation and splashing within the melt layer. At higher fluences, it was found that the ablation depth exceeded the melt layer depth due to shockwave ablation. The variation in ion flux and ion velocity was also studied both experimentally and theoretically. It was found that the variation in ion flux is mainly dependent on the variation in the average charge state, with only a small variation in the total number of ions above $\sim \!\!1.5\; \,{\rm J/c}{{\rm m}^2}$. Comparisons between the theoretical and experimental ion flux showed that higher charge state ions received greater portion of the laser energy compared with lower charge state ions.

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42

Tomić Luketić, Kristina, Marko Karlušić, Andreja Gajović, Stjepko Fazinić, Jacques H. O’Connell, Borna Pielić, Borna Radatović, and Marko Kralj. "Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam." Materials 14, no. 8 (April 11, 2021): 1904. http://dx.doi.org/10.3390/ma14081904.

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Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.

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Cherkova, S. G., V. A. Skuratov, and V. A. Volodin. "Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions." Semiconductors 53, no. 11 (November 2019): 1427–30. http://dx.doi.org/10.1134/s1063782619110046.

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44

Liu, Wen Bo, Sheng Ming Jin, Kui Xin Cui, and Xue Hui Zhan. "Structure and Surface Properties of Al³⁺- Modified Sepiolite." Materials Science Forum 913 (February 2018): 1033–41. http://dx.doi.org/10.4028/www.scientific.net/msf.913.1033.

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Al3+-modified sepiolite was synthesized through hydrothermal treatment of acidified sepiolite using sodium aluminate as a modifier. The structure and surface properties of the modified sepiolite were characterized by XRD, FTIR, NMR, and Zeta potentials. The XRD and FTIR results demonstrated that Al3+ions were introduced into the sepiolite lattice.29SiNMR of the sepiolite ore showed that Si atoms had three configurations with chemical shifts of -98.4, -95.2, and -92.5 ppm with the atomic ratio of 1.39: 1.43: 1, which was assigned to the center silicon, edge silicon, and near-edged silicon atoms, respectively. For the as-prepared Al3+-modified sepiolite, the signal intensity of the edge silicon atoms decreased and shifted from -95.2 ppm to -94.5 ppm. Moreover, a new chemical shift of - 87.4ppm belonging to Q1structure appeared. The ratio of four configurations of silicon atoms was 1.43: 1: 1.53: 1.04.27AlNMR of Al3+-modified sepiolite showed that Al atoms have two configurations corresponding to the tetra-coordination and octahedral coordination, respectively. The results of NMR revealed that the sepiolite was modified by substitution of Si atoms in the framework and Mg atoms in the interlayer, resulting in a less negative charge on the surface of Al3+-modified sepiolite.

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45

Compagnini, G., L. Calcagno, G. Foti, and G. Baratta. "Spectroscopic characterization of annealed Si1−xCx films synthesized by ion implantation." Journal of Materials Research 11, no. 9 (September 1996): 2269–73. http://dx.doi.org/10.1557/jmr.1996.0288.

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Amorphous hydrogenated silicon carbon alloys were synthesized by C2H2 ions implantation in a silicon substrate at different fluences to obtain samples with different carbon atomic concentrations (10−50 at. %). As-implanted and subsequently annealed samples were investigated by using Rutherford backscattering, infrared, and Raman spectroscopies in order to follow the crystallization process. It was found that crystallization of stoichiometric SiC phase starts at 1000 °C both in low and high containing carbon films, while at the stoichiometric composition silicon (or carbon) was found to clusterize into homonuclear islands even at lower temperatures. The analysis of the fundamental absorption edge reveals the presence of an optical energy gap of about 1.3 eV independently on the film composition in the as-implanted samples, while after the thermal process at 1000 °C it increases to 2 eV for a carbon concentration below 0.5 and up to 1.8 eV for all those samples with a carbon excess.

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Bellandi, E., and V. Soncini. "SiO₂ Etch Rate Modification by Ion Implantation." Solid State Phenomena 195 (December 2012): 55–57. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.55.

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It is well known that etch rate of dielectric thin films, such as silicon dioxide, increases after ion implantation. A study of the structural damage created in SiO2films by ion implantation can be found in references [,]. It is reported that nuclear collision of implanted ion with target ions produces a relevant rearrangement of in SiO2target network: Si and O target atoms are moved from their original positions to new positions where original local atomic coordination is not recovered. As final result, damage consists mainly of Si-O broken bonds and non-bridging oxygen.

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Choueiry, Antoine Al, Anne-Marie Jurdyc, Bernard Jacquier, Fabrice Gourbilleau, and Richard Rizk. "Fluorescence line narrowing and decay dynamics of Er3+ ions in silicon-rich silicon oxide multilayers." Optical Materials 30, no. 12 (August 2008): 1889–94. http://dx.doi.org/10.1016/j.optmat.2007.12.015.

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48

Croitoru, N., E. Gubbini, M. Rattaggi, P. G. Rancoita, and A. Seidman. "Radiation damages induced in n-type silicon by ions and neutrons." Nuclear Physics B - Proceedings Supplements 78, no. 1-3 (August 1999): 657–62. http://dx.doi.org/10.1016/s0920-5632(99)00620-9.

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49

Kohstall, C., S. Fritzsche, B. Fricke, and W. D. Sepp. "CALCULATED LEVEL ENERGIES, TRANSITION PROBABILITIES, AND LIFETIMES OF SILICON-LIKE IONS." Atomic Data and Nuclear Data Tables 70, no. 1 (September 1998): 63–92. http://dx.doi.org/10.1006/adnd.1998.0786.

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50

Huang, Min, Martin Andersson, Tomas Brage, Roger Hutton, Per Jönsson, Chen Chongyang, and Yaming Zou. "Multiconfiguration Dirac–Hartree–Fock calculations for intercombination lines in silicon-like ions." Journal of Physics B: Atomic, Molecular and Optical Physics 38, no. 5 (February 22, 2005): 503–8. http://dx.doi.org/10.1088/0953-4075/38/5/003.

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Journal articles on the topic 'Silicon atomic ions'

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