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Relevant bibliographies by topics / Silicon Barrier

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Academic literature on the topic 'Silicon Barrier'

Author: Grafiati

Published: 4 June 2021

Last updated: 12 February 2022

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Journal articles on the topic "Silicon Barrier"

1

Sobolewski, M. A. "Studies of barrier height mechanisms in metal–silicon nitride–silicon Schottky barrier diodes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 4 (July 1989): 971. http://dx.doi.org/10.1116/1.584589.

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Muller, David A. "A sound barrier for silicon?" Nature Materials 4, no. 9 (September 2005): 645–47. http://dx.doi.org/10.1038/nmat1466.

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Yim, Chanyoung, Niall McEvoy, Ehsan Rezvani, Shishir Kumar, and Georg S. Duesberg. "Carbon-Silicon Schottky Barrier Diodes." Small 8, no. 9 (March 5, 2012): 1360–64. http://dx.doi.org/10.1002/smll.201101996.

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Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Chang, C. Y., B. S. Wu, Y. K. Fang, and R. H. Lee. "Amorphous silicon bulk barrier phototransistor with Schottky barrier emitter." Applied Physics Letters 47, no. 1 (July 1985): 49–51. http://dx.doi.org/10.1063/1.96399.

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Carduner, K. R., R. O. Carter, and L. C. Westwood. "Identification and Assay of an Organosilicon Contaminant in Unleaded Gasolines." Applied Spectroscopy 42, no. 7 (September 1988): 1265–67. http://dx.doi.org/10.1366/0003702884429922.

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Inductively coupled plasma-atomic emission spectroscopy is used to determine the concentration of a silicon impurity that appeared in some samples of unleaded fuel from a metropolitan area in 1984 and 1985. Silicon-29 NMR is used to identify the contaminant as the cyclic silicone, octamethylcyclotetrasiloxane. This silicone tetramer is also observed in the NMR of a commercial coating, a xylene solution of linear and cyclic silicones, used as a moisture barrier in the electronics industry.

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Straayer, A., G. J. A. Hellings, F. M. van Beek, and F. van der Maesen. "Barrier‐height fixation in dc‐sputtered Au‐p silicon Schottky barriers." Journal of Applied Physics 59, no. 7 (April 1986): 2471–75. http://dx.doi.org/10.1063/1.336992.

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Gadkaree, Kishor P., Kamal Soni, Shang-Cong Cheng, and Carlo Kosik-Williams. "Single-crystal silicon films on glass." Journal of Materials Research 22, no. 9 (September 2007): 2363–67. http://dx.doi.org/10.1557/jmr.2007.0330.

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We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.

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HO, PAUL S. "MACROSCOPIC PROPERTIES AND SCHOTTKY BARRIER FORMATION AT SILICIDE-SILICON INTERFACES." Modern Physics Letters B 01, no. 03 (June 1987): 119–27. http://dx.doi.org/10.1142/s021798498700017x.

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This paper reviews the current understanding of the microscopic properties of silicide-silicon interfaces pertaining to the formation of Schottky barrier. Significant progress has been accomplished, including the preparation of single-crystal silicide interfaces and the observation of interface states. Some important issues remain unresolved, such as the disagreement on the epitaxial nickel silicide barriers and the origin of interface states.

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Chen, Hong Fei, and Hagen Klemm. "Environmental Barrier Coatings for Silicon Nitride." Key Engineering Materials 484 (July 2011): 139–44. http://dx.doi.org/10.4028/www.scientific.net/kem.484.139.

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Ytterbium silicate layers were deposited on Si3N4 ceramics as environmental barrier coatings (EBCs) by a dip coating-sintering method. Coated samples were tested in an atmosphere simulating the practical conditions of a gas turbine to investigate water vapor corrosion and recession mechanisms of ytterbium silicate coatings. Prior and after tests, phase compositions and morphologies of the coatings varied as the consequence of the formation of silica at the coating/substrate interface. Due to the evaporation and diffusion of silica into the upper layer, a porous interface was finally found, which led to the spallation of coating.

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Dissertations / Theses on the topic "Silicon Barrier"

1

Dahlquist, Fanny. "Junction Barrier Schottky Rectifiers in Silicon Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3367.

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Naredla, Sai Bhargav. "Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes." Youngstown State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725.

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Kashefi-Naini, A. "A study of some transition metal-silicon Schottky barrier diodes." Thesis, University of Kent, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375200.

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Morrison, Dominique Johanne. "The fabrication and characterisation of 4H-SiC Schottky barrier diodes." Thesis, University of Newcastle Upon Tyne, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324784.

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Wong, Frankie. "Mullite-mullite environmental barrier coatings on silicon nitride by composite sol-gel." Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/12612.

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Silicon nitride is susceptible to paralinear oxidation in applications exposed to combustion environments, such as glow plugs in direct injection natural gas engines. The oxide layer may become volatile in moist high-temperature environments. To protect Si₃N₄, environmental barrier coatings (EBC) maybe used. Mullite has high corrosion resistance, high temperature strength, and its thermal expansion (CTE=4.5-6 x 10⁻⁶ /°C), is relatively close to that of Si₃N₄ (CTE=3.3 x 10⁻⁶ /°C). However, the CTEs still differ by a factor of 1.4-2, thus it is difficult to produce crack free EBCs >1 µm thick. To address this, it is proposed that a mullite-mullite EBC be applied by composite sol gel. The addition of calcined powder should reduce the overall shrinkage of the sol, making deposition of thicker (1-5µm) coatings possible. Processing methods to produce mullite-mullite EBC by composite sol gel were studied. Sol gel (SG) mullite precursors were prepared by combining silica-precursor sol with AlOOH sol. Commercially available calcined mullite (CM) was dispersed in the sol, with a solid loading of 36%. Gelation of these sols was studied and it was found that using AlOOH sols at a pH of 2.5 gave the best balance of gelation rate and CM sedimentation rate. Mullite sols were prepared and fired at different temperatures and times. It was determined that mullitizatoin of SG samples required 20min at 1300°C, however, CM addition allowed a similar extent of mullitization at 1250°C. It is hypothesized that the CM acted as seeds, shortening the nucleation step during mullite formation. Calcined samples had a density of 3.01g/cm³, with a total porosity of 9.4%. Glow plugs were dip coated. Final dipping parameters were sol viscosity of 40cps and withdrawal speed of 0.1mm/s. Calcined coatings with CM were relatively crack free with thicknesses of ~3μm. A coated glow plug was tested on an electric rig for effectiveness against oxidation. After 100hrs at 1300°C, the corrosion products layer on the coated glow plug was about one fourth as compared to the as received glow plugs. In conclusion, the composite sol-gel mullite EBC appears to provide significant oxidation protection to the silicon nitride glow plugs.

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Lin, Xin. "Yttrium disilicate as environmental barrier coating for silicon nitride-based glow plug." University of British Columbia, 2017. http://hdl.handle.net/2429/64165.

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Silicon-based ceramics undergo severe degradation at temperatures above ~1000 ℃ in the presence of water vapor, which is inevitable in combustion environments. Therefore, Environmental Barrier Coatings (EBCs) are necessary for the protection of Si₃N₄-based ceramic components in the harsh combustion environments. Rare earth silicates, which have relatively low thermal expansion coefficients, good chemical stability at high temperatures and low recession rates in the presence of water vapor, are promising candidate materials for such EBC application. This study was related to the application of Si₃N₄ as part of Hot Surface Ignition Systems (“Glow-Plugs”, GP) in High-Pressure Natural Gas Direct Injection engines, currently under development by Vancouver company Westport Fuel Systems Inc. For certain kinds of commercially available Si₃N₄-based GPs, the use of Y₂O₃ as sintering additive results in the in-service formation of yttrium silicates on their ceramic pins. Therefore, taking the chemical compatibility into consideration, yttrium disilicate coating was chosen to provide corrosion protection for such GPs. A sol-gel dip-coating route, which is simple, cost effective and industrially applicable, has been developed to apply multi-layer Y₂Si₂O₇ EBCs on the GPs. Selective processing parameters, including the sol aging conditions and the withdrawal speed of the GP substrate during dip coating procedure, were investigated in detail. The thickness and microstructures of the coatings were controlled through the adjustment of these parameters during sol preparation and dip coating processes. To simultaneously achieve sufficient thickness and avoid the formation of cracks, thin layers of Y₂Si₂O₇ coating, each with the thickness of ~1 µm, were successively applied and processed. The 6-layer crack-free coating was able to achieve an average thickness of ~5.5 µm. The microstructures of the coatings were evaluated and their performance was tested at ~1200 ℃ in high concentration water vapor atmosphere and on a natural gas burner rig. Improved corrosion resistance of such EBC-protected glow plugs was observed in these tests.
Applied Science, Faculty of
Materials Engineering, Department of
Graduate

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Fanaei, Sheikholeslami Tahereh. "Characterization of amorphous silicon carbide and its application to contact barrier diode." Thèse, Université de Sherbrooke, 2008. http://savoirs.usherbrooke.ca/handle/11143/1838.

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Résumé : Des couches minces du carbure silicium amorphe ont été préparées en utilisant un procédé de déposition en phase vapeur ayant comme source des polymères (PS-CVD). Les couches ont été déposées à des températures qui varient entre 750 et 1000°C. Les substrats utilisés pour dépôts sont en silicium cristallin du type p et n, et en dioxyde de silicium (SiO[indice inférieur 2]) obtenu par croissance thermique. Les propriétés chimiques et électriques des couches ont été étudiées par diverses techniques, y compris la spectroscopie infrarouge par transformé de Fourier, détection de recul élastique (ERD), et la mesure de capacité-tension. Nous avons observé une corrélation entre la concentration moyenne de l'oxygène dans les films et la température de déposition, liant une faible concentration en oxygène dans le film à une température élevée de déposition. Cependant, la concentration de l'oxygène dans les films déposés à la même température était indépendante du substrat. Les couches minces déposées à basse température ont démontré un comportement isolant, alors qu'un comportement semiconducteurest obtenu à température élevée. Des contacts ohmiques ont été obtenus sur la couche mince de carbure de silicium amorphe (a-SiC) en évaporant des contacts de nickel, suivis d'un recuit à 800 °C pendant 2 minutes. La mobilité de Hall moyenne obtenue est d'environ 34 cm[indice supérieur 2]/V.s pour les échantillons déposés sur (SiO[indice inférieur 2]) a 1000 °C. Les caractéristiques générales du a-SiC déposé à 750 °C, ont été étudiées se servant des hétérostructures de SiC/c-Si utilisés comme des diodes à barrière de contact. Les proprietés de transport du courant dans la couche mince de a-SiC déposée sur un substrat de c-Si detype-p ont été étudiés en utilisant des mesures courant-tension (IV) et capacité-tension (CV). Les caractéristiques IV ont montré qu'une dépendance exponentielle du courant aux tensions est applicable pour les basses tensions tandis que la caractéristique de courant limite par les charges de l'espace est dominante pour les hautes tensions. Les caractéristiques de CV ont indiqué un comportement de type-p pour a-SiC résultant de la charge positive injectée par le substrat de silicium. La mobilité des trous et la durée de vie des porteurs injectés dans la couche mince de a-SiC ont été calculées en utilisant un modèle du courant limite par les charges d'espace. La variation de la mobilité effective des trous de a-SiC varie entre 10[indice supérieur -4] et 10[indice supérieur -7] et attribué aux diverses valeurs de la densité des défauts dans les couches minces de a-SiC. // Abstract : Thin films of amorphous silicon carbide were prepared using Polymer-Source ChemicalVapor Deposition (PS-CVD) at températures between 750 and 1000 °C. The substrates weresilicon single crystal wafers of p-type and n-type, and thermally-grown silicon dioxidesubstrates. The chemical and electrical properties of the films were studied by varioustechniques, including Fourier-transform infrared spectroscopy, Elastic Recoil Detection(ERD), and capacitance-voltage technique. A correlation was observed between the averageconcentration of oxygen in the films and the deposition temperature, linking a low oxygenconcentration in the film to a high deposition temperature. However, the concentration ofoxygen in the films deposited at the same temperature was independent of the substrate. Thethin films deposited at low temperature showed insulating behaviour, while thesemiconducting behaviour was obtained at high deposition temperatures. Ohmic contactswere obtained on the deposited a-SiC thin film by evaporating nickel contacts, followed byannealing of the sample at 800 °C for 2 minutes. The average Hall mobility was found about µ[subscript H] = 34 cm[superscript 2]/V.s for the samples deposited on SiO[subscript 2] substrate at 1000 °C.The general characteristics of wide band gap a-SiC deposited at 750 °C, was studied using a-SiC/c-Si heterostructures applied as the contact barrier diodes. The current transportproperties of a-SiC thin film deposited on a p-type silicon c-Si substrate were investigatedusing current-voltage (IV) and capacitance-voltage (CV) measurements. IV characteristicsshowed an exponential dependence of current to the applied voltages for low forward biaswhile the space charge limited current characteristics dominated for higher forward bias. CVcharacteristics indicated a p-type property for a-SiC which is resulted by the injected positivecharge from p-type silicon substrate. The hole mobility and injected carrier lifetime in a-SiCthin film was calculated using a model of space-charge limited current. The variation ineffective hole mobility of a-SiC, which was ranged between 10[superscript -4] and 10[superscript -7], was attributed tothe various values of defect density of the a-SiC thin films.

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BREED, ANIKET AJITKUMAR. "SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143.

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Jarrell, Joshua Taylor. "High Temperature Characterization and Endurance Testing of Silicon Carbide Schottky Barrier Alpha Detectors." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1420467919.

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Chen, Li. "Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates." Thesis, University of North Texas, 1999. https://digital.library.unt.edu/ark:/67531/metadc2255/.

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The Semiconductor Industry Association (SIA) has identified the integration of copper (Cu) with low-dielectric-constant (low-k) materials as a critical goal for future interconnect architectures. A fundamental understanding of the chemical interaction of Cu with various substrates, including diffusion barriers and adhesion promoters, is essential to achieve this goal. The objective of this research is to develop novel organic polymers as Cu/low-k interfacial layers and to investigate popular barrier candidates, such as clean and modified tantalum (Ta) substrates. Carbon-silicon (C-Si) polymeric films have been formed by electron beam bombardment or ultraviolet (UV) radiation of molecularly adsorbed vinyl silane precursors on metal substrates under ultra-high vacuum (UHV) conditions. Temperature programmed desorption (TPD) studies show that polymerization is via the vinyl groups, while Auger electron spectroscopy (AES) results show that the polymerized films have compositions similar to the precursors. Films derived from vinyltrimethyl silane (VTMS) are adherent and stable on Ta substrates until 1100 K. Diffusion of deposited Cu overlayers is not observed below 800 K, with dewetting occurred only above 400 K. Hexafluorobenzene moieties can also be incorporated into the growing film with good thermal stability. Studies on the Ta substrates demonstrate that even sub-monolayer coverages of oxygen or carbide on polycrystalline Ta significantly degrade the strength of Cu/Ta chemical interactions, and affect the kinetics of Cu diffusion into bulk Ta. On clean Ta, monolayer coverages of Cu will de-wet only above 600 K. A partial monolayer of adsorbed oxygen (3L O2 at 300 K) results in a lowering of the de-wetting temperature to 500 K, while saturation oxygen coverage (10 L O2, 300 K) results in de-wetting at 300 K. Carbide formation also lowers the de-wetting temperature to 300 K. Diffusion of Cu into the Ta substrate at 1100 K occurs only after a 5-minute induction period. This induction period increases to 10 min for partially oxidized Ta, 15 min for carbidic Ta and 20 min for fully oxidized Ta.

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Books on the topic "Silicon Barrier"

1

Meier, Johann Emil. Herstellung und Untersuchung passivierender Grenzschichten in amorphen Silizium Schottky-Solarzellen. Konstanz: Hartung-Gorre, 1992.

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2

P, Jacobson Thomas, and United States. National Aeronautics and Space Administration., eds. Containment of a silicone fluid free surface in reduced gravity using barrier coatings. [Washington, DC]: National Aeronautics and Space Administration, 1988.

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Studies of the nature of interfacial barriers in high efficiency crystalline silicon solar cells: Final report for the period October 5, 1984 to October 4, 1985. Pasadena, Calif: California Institute of Technology, Jet Propulsion Laboratory, 1985.

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Book chapters on the topic "Silicon Barrier"

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Singh, Ranbir, and B. Jayant Baliga. "Schottky Barrier Diodes." In Cryogenic Operation of Silicon Power Devices, 25–35. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5751-7_3.

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Lee, K. N., D. S. Fox, R. C. Robinson, and N. P. Bansal. "Environmental Barrier Coatings for Silicon-Based Ceramics." In High Temperature Ceramic Matrix Composites, 224–29. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527605622.ch36.

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Beneking, H., L. Vescan, A. Gruhle, J. M. Cloos, and M. Marso. "Silicon Bulk Barrier Diodes Fabricated by LPVPE." In High-Speed Electronics, 123–26. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_23.

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Zhu, Lihua, Yan Li, Wensi Liang, Jun Wu, Yunjin Sun, and Yun Ouyang. "Barrier Mechanism Analysis of Silicon Oxide Film by SEM." In Lecture Notes in Electrical Engineering, 1039–44. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3530-2_127.

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Kanicki, J., M. Osama Aboelfotoh, and W. Bauhofer. "Schottky Barrier Formation at Metal-Hydrogenated Amorphous Silicon Interfaces." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 183–87. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_39.

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Stephani, Dietrich, Reinhold Schoerner, Dethard Peters, and Peter Friedrichs. "Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes." In Silicon Carbide and Related Materials 2005, 1147–50. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1147.

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Nakamura, Tomonori, Toshiyuki Miyanagi, Isaho Kamata, and Hidekazu Tsuchida. "Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes." In Silicon Carbide and Related Materials 2005, 927–30. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.927.

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Ali, Abdul-Aziz, and Ramakrishna T. Bhatt. "Thermal Residual Stress in Environmental Barrier Coated Silicon Nitride-Modeled." In Advanced Ceramic Coatings and Interfaces IV, 105–12. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470584293.ch11.

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Ota, Chiharu, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa, and Hiromichi Ohashi. "Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties." In Silicon Carbide and Related Materials 2005, 1175–78. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1175.

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Satoh, Masataka, and H. Matsuo. "Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC." In Silicon Carbide and Related Materials 2005, 923–26. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.923.

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Conference papers on the topic "Silicon Barrier"

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Sun, Ellen Y., Harry E. Eaton, John E. Holowczak, and Gary D. Linsey. "Development and Evaluation of Environmental Barrier Coatings for Silicon Nitride." In ASME Turbo Expo 2002: Power for Land, Sea, and Air. ASMEDC, 2002. http://dx.doi.org/10.1115/gt2002-30628.

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Environmental barrier coatings (EBCs) are required for applications of silicon nitride (Si3N4) and silicon carbide (SiC) based materials in gas turbine engines because of the accelerated oxidation of Si3N4 and SiC and subsequent volatilization of silica in the high temperature high-pressure steam environment. EBC systems for silicon carbide fiber reinforced silicon carbide ceramic matrix composites (SiC/SiC CMC’s) were first developed and have been demonstrated via long-term engine tests. Recently, studies have been carried out at United Technologies Research Center (UTRC) to understand the temperature capability of the current celsian-based EBC systems and its suitability for silicon nitride ceramics concerning thermal expansion mismatch between the EBC coating and silicon nitride substrates. This paper will present recent progress in improving the temperature capability of the celsian –based EBC systems and discuss their effectiveness for silicon nitride.

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Hang, Shuojin, Zakaria Moktadir, and Hiroshi Mizuta. "Irradiation induced tunnel barrier in side-gated graphene nanoribbon." In 2014 Silicon Nanoelectronics Workshop (SNW). IEEE, 2014. http://dx.doi.org/10.1109/snw.2014.7348619.

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Kim, Sungjun, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Dong Keun Lee, Yao-Feng Chang, and Byung-Gook Park. "Characterization of resistive switching memory devices with tunnel barrier." In 2017 Silicon Nanoelectronics Workshop (SNW). IEEE, 2017. http://dx.doi.org/10.23919/snw.2017.8242310.

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Jang, Moongyu, Yarkyeon Kim, Myungsim Jun, and Cheljong Choi. "High performance Schottky barrier MOSFETs with workfunction engineering." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418432.

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Bhatia, Tania, G. V. Srinivasan, Sonia V. Tulyani, Robert A. Barth, Venkat R. Vedula, and William K. Tredway. "Environmental Barrier Coatings for Monolithic Silicon Nitride: Bond Coat Development." In ASME Turbo Expo 2007: Power for Land, Sea, and Air. ASMEDC, 2007. http://dx.doi.org/10.1115/gt2007-27685.

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Environmental barrier coatings (EBCs) are being developed for silicon carbide (SiC) based composites and monolithic silicon nitride (Si3N4) to protect against the accelerated oxidation and subsequent silica volatilization in high temperature high-pressure steam environments encountered in gas turbine engines. It has been found that the application of EBCs developed for SiC-based composites (EBCSiC) to monolithic silicon nitride results in a loss of room temperature mechanical strength of the monolithic substrate. In this paper, we discuss the development of a bond coat system tailored for monolithic silicon nitride that helps retain the strength of the substrate. Some of the unique requirements and challenges associated with the processing of non-line-of-sight EBCs for Si3N4 will also be discussed. Preliminary results from coating of airfoils will be presented.

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Chaofeng Cai, Li Zhang, Na Ren, and Kuang Sheng. "Silicon carbide pinched barrier rectifier (PBR)." In 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2013. http://dx.doi.org/10.1109/ispsd.2013.6694472.

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Tan, E. J., K. L. Pey, N. Singh, G. Q. Lo, D. Z. Chi, K. M. Hoe, P. S. Lee and, and G. D. Cui. "Silicon Nanowire Schottky Barrier NMOS Transistors." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.h-5-4.

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Zeng, Lang, Yu Ning Zhao, Yu Hui He, Xiao Yan Liu, Gang Du, Jin Feng Kang, and Ru Qi Han. "A computational study of dopant-segregated Schottky barrier MOSFETs." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418491.

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9

Miyazaki, Seiichi, Yohji Ihara, and Masataka Hirose. "Resonant Tunneling Through Amorphous Silicon/Silicon Nitride Double Barrier Structures." In 1986 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1986. http://dx.doi.org/10.7567/ssdm.1986.d-10-2.

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10

Feste, S. F., M. Zhang, J. Knoch, S. L. Zhang, and S. Mantl. "Variability in SOI Schottky barrier MOSFETs." In 2008 9th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2008. http://dx.doi.org/10.1109/ulis.2008.4527134.

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Reports on the topic "Silicon Barrier"

1

Lorenz, Adam. 1366 Direct Wafer: Demolishing the Cost Barrier for Silicon Photovoltaics. Office of Scientific and Technical Information (OSTI), August 2013. http://dx.doi.org/10.2172/1134291.

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2

Gelbard, Fred, and David Sassani. Modeling Radionuclide Releases from TRISO Particles by Simultaneous Diffusion Through and Corrosion of the Silicon Carbide Barrier Layer. Office of Scientific and Technical Information (OSTI), December 2018. http://dx.doi.org/10.2172/1489624.

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3

Swab, Jeffrey J., Dominic Danna, Charles Leveritt, and Stephanie Piraino. Evaluation of a Foreign Silicon Nitride as a Potential Gun Barrel Liner. Fort Belvoir, VA: Defense Technical Information Center, April 2010. http://dx.doi.org/10.21236/ada518417.

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