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Journal articles on the topic 'Silicon Barrier'

Author: Grafiati

Published: 4 June 2021

Last updated: 12 February 2022

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1

Sobolewski, M. A. "Studies of barrier height mechanisms in metal–silicon nitride–silicon Schottky barrier diodes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 4 (July 1989): 971. http://dx.doi.org/10.1116/1.584589.

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2

Muller, David A. "A sound barrier for silicon?" Nature Materials 4, no. 9 (September 2005): 645–47. http://dx.doi.org/10.1038/nmat1466.

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3

Yim, Chanyoung, Niall McEvoy, Ehsan Rezvani, Shishir Kumar, and Georg S. Duesberg. "Carbon-Silicon Schottky Barrier Diodes." Small 8, no. 9 (March 5, 2012): 1360–64. http://dx.doi.org/10.1002/smll.201101996.

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4

Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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5

Chang, C. Y., B. S. Wu, Y. K. Fang, and R. H. Lee. "Amorphous silicon bulk barrier phototransistor with Schottky barrier emitter." Applied Physics Letters 47, no. 1 (July 1985): 49–51. http://dx.doi.org/10.1063/1.96399.

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6

Carduner, K. R., R. O. Carter, and L. C. Westwood. "Identification and Assay of an Organosilicon Contaminant in Unleaded Gasolines." Applied Spectroscopy 42, no. 7 (September 1988): 1265–67. http://dx.doi.org/10.1366/0003702884429922.

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Inductively coupled plasma-atomic emission spectroscopy is used to determine the concentration of a silicon impurity that appeared in some samples of unleaded fuel from a metropolitan area in 1984 and 1985. Silicon-29 NMR is used to identify the contaminant as the cyclic silicone, octamethylcyclotetrasiloxane. This silicone tetramer is also observed in the NMR of a commercial coating, a xylene solution of linear and cyclic silicones, used as a moisture barrier in the electronics industry.

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7

Straayer, A., G. J. A. Hellings, F. M. van Beek, and F. van der Maesen. "Barrier‐height fixation in dc‐sputtered Au‐p silicon Schottky barriers." Journal of Applied Physics 59, no. 7 (April 1986): 2471–75. http://dx.doi.org/10.1063/1.336992.

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8

Gadkaree, Kishor P., Kamal Soni, Shang-Cong Cheng, and Carlo Kosik-Williams. "Single-crystal silicon films on glass." Journal of Materials Research 22, no. 9 (September 2007): 2363–67. http://dx.doi.org/10.1557/jmr.2007.0330.

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We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.

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9

HO, PAUL S. "MACROSCOPIC PROPERTIES AND SCHOTTKY BARRIER FORMATION AT SILICIDE-SILICON INTERFACES." Modern Physics Letters B 01, no. 03 (June 1987): 119–27. http://dx.doi.org/10.1142/s021798498700017x.

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This paper reviews the current understanding of the microscopic properties of silicide-silicon interfaces pertaining to the formation of Schottky barrier. Significant progress has been accomplished, including the preparation of single-crystal silicide interfaces and the observation of interface states. Some important issues remain unresolved, such as the disagreement on the epitaxial nickel silicide barriers and the origin of interface states.

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10

Chen, Hong Fei, and Hagen Klemm. "Environmental Barrier Coatings for Silicon Nitride." Key Engineering Materials 484 (July 2011): 139–44. http://dx.doi.org/10.4028/www.scientific.net/kem.484.139.

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Ytterbium silicate layers were deposited on Si3N4 ceramics as environmental barrier coatings (EBCs) by a dip coating-sintering method. Coated samples were tested in an atmosphere simulating the practical conditions of a gas turbine to investigate water vapor corrosion and recession mechanisms of ytterbium silicate coatings. Prior and after tests, phase compositions and morphologies of the coatings varied as the consequence of the formation of silica at the coating/substrate interface. Due to the evaporation and diffusion of silica into the upper layer, a porous interface was finally found, which led to the spallation of coating.

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11

KIMATA, Masafumi, Masahiko DENDA, and Natsuro TSUBOUCHI. "Silicon Schottky-Barrier Infrared Image Sensors." Review of Laser Engineering 14, no. 2 (1986): 98–107. http://dx.doi.org/10.2184/lsj.14.98.

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12

Altebaeumer, Thomas, and Haroon Ahmed. "Tunnel Barrier Formation in Silicon Nanowires." Japanese Journal of Applied Physics 42, Part 1, No. 2A (February 15, 2003): 414–17. http://dx.doi.org/10.1143/jjap.42.414.

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13

Piscator, J., and O. Engström. "Schottky barrier modulation on silicon nanowires." Applied Physics Letters 90, no. 13 (March 26, 2007): 132107. http://dx.doi.org/10.1063/1.2717088.

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14

Jonscher, Andrew K., and Mark N. Robinson. "Dielectric spectroscopy of silicon barrier devices." Solid-State Electronics 31, no. 8 (August 1988): 1277–88. http://dx.doi.org/10.1016/0038-1101(88)90427-3.

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15

Miyazaki, Seiichi, Yohji Ihara, and Masataka Hirose. "Resonant tunneling through amorphous silicon–silicon nitride double-barrier structures." Physical Review Letters 59, no. 1 (July 6, 1987): 125–27. http://dx.doi.org/10.1103/physrevlett.59.125.

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16

TSU, RAPHAEL. "ROOM TEMPERATURE SILICON QUANTUM DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 145–63. http://dx.doi.org/10.1142/s0129156498000087.

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Quantum mechanical devices utilize the wave nature of electrons for their operations whenever the electron mean-free-path exceeds the appropriate dimensions of the device structure. Some of the issues such as the tunneling time, the reduction of the dielectric constant and the drastic increase in the binding energy of dopants are discussed. Lacking an appropriate barrier for silicon, the majority of quantum devices are fabricated with compound semiconductors. In the past several years, certain schemes appeared, such as the resonant tunneling via nanoscale silicon particles imbedded in an oxide matrix, and the superlattice barrier for silicon consisting of several periods of Si/O. There appears some doubt about the tunneling nature of the former, and the possiblity of dielectric breakdowns. This article aims to show that dielectric breakdowns can occur under fabrication conditions without using a controlled forming process. The latter results in epitaxially grown silicon beyond the superlattice barrier region, free of stacking fault defects, and thus is potentially important for silicon based quantum devices as well as serving as an SOI (silicon on insulator), without ion-implantation damage and oxygen inclusion. The replacement of SOI by the epitaxially grown Si/O superlattice barrier should promote the effort in high speed and low power MOSFET devices.

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17

Bapat, D. R., K. L. Narasimhan, and Ravi Kuchibhotla. "The temperature dependence of the barrier height in amorphous-silicon Schottky barriers." Philosophical Magazine B 56, no. 1 (July 1987): 71–78. http://dx.doi.org/10.1080/13642818708211225.

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18

Khanna, Shaweta, Arti Noor, Man Singh Tyagi, and Sonnathi Neeleshwar. "Interface States and Barrier Heights on Metal/4H-SiC Interfaces." Materials Science Forum 615-617 (March 2009): 427–30. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.427.

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Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the mechanism of barrier formation on these surfaces. As in case of 3C and 6H-SiC, the barrier heights depend strongly upon method of surface preparation with a considerable scatter in the barrier height for a given metal-semiconductor system. However, for each metal the barrier height depends on the metal work function and strong pinning of the Fermi level has not been observed. The slopes of the linear relation between the barrier heights and metal work functions varies over a wide range from 0.2 to about 0.75 indicating that the density of interface states depends strongly on the method of surface preparation. By a careful examination of the data on barrier heights we could identify a set of nearly ideal interfaces in which the barrier heights vary linearly with metal work function approaching almost to the Schottky limit. The density of interface states for these interfaces is estimated to lie between 4.671012 to 2.631012 states/ cm2 eV on the silicon rich surface and about three times higher on the carbon rich faces. We also observed that on these ideal interfaces the density of interface states was almost independent of metal indicating that the metal induced gap states (MIGS) play no role in determining the barrier heights in metal-4H-SiC Schottky barriers.

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19

Wang, Shi-Qing. "Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide." MRS Bulletin 19, no. 8 (August 1994): 30–40. http://dx.doi.org/10.1557/s0883769400047710.

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The Semiconductor Industry Association (SIA) roadmap calls for the incorporation of Cu plugs (vias) integrated with interconnects in 1997. Copper is being evaluated for ULSI metallization because of its lower bulk electrical resistivity and its superior resistance to electromigration and stress voiding as compared to commonly used aluminum and its alloys. One of the major drawbacks of Cu is its fast diffusion in Si and drift in SiO2-based dielectrics, resulting in the deterioration of devices at low temperatures. Hence a diffusion barrier is necessary between Cu and Si or SiO2. Figure 1 is a cross section ofa three metal level interconnect structure using Cu as the conductive material. The interlevel dielectrics (ILD) could be conventional SiO2-based materials or more ideally, materials with low dielectric constants such as polyimide. If conventional SiO2 is used, then Cu plugs and interconnects have to be enclosed in diffusion/drift barriers so that Cu will not move into Si or SiO2 under thermal stress or biased temperature stress (BTS).This article reviews the published studies on conductive diffusion barriers between thin Cu films and Si substrates. In addition, the work on diffusion and drift of Cu into commonly used inorganic dielectric systems is also summarized. Finally, some concerns involving diffusion/drift barriers between Cu and Si or SiO2 for sub-0.5 μm feature size with high aspect ratios are discussed.

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20

Körner, L., A. Sonnenfeld, and Ph Rudolf von Rohr. "Silicon oxide diffusion barrier coatings on polypropylene." Thin Solid Films 518, no. 17 (June 2010): 4840–46. http://dx.doi.org/10.1016/j.tsf.2010.02.006.

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21

Lobotka, P., I. Vávra, Š. Gaži, A. Plecenik, and J. Dérer. "Josephson junction with an amorphous silicon barrier." Journal of Low Temperature Physics 106, no. 3-4 (February 1997): 381–86. http://dx.doi.org/10.1007/bf02399642.

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22

Remaki, B., C. Populaire, V. Lysenko, and D. Barbier. "Electrical barrier properties of meso-porous silicon." Materials Science and Engineering: B 101, no. 1-3 (August 2003): 313–17. http://dx.doi.org/10.1016/s0921-5107(02)00731-6.

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23

Doyle, J. P., B. G. Svensson, and M. O. Aboelfotoh. "Copper germanide Schottky barrier contacts to silicon." Journal of Applied Physics 80, no. 4 (August 15, 1996): 2530–32. http://dx.doi.org/10.1063/1.363039.

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24

Iwamori, Satoru, Yumi Gotoh, and Krzysztof Moorthi. "Characterization of silicon oxynitride gas barrier films." Vacuum 68, no. 2 (October 2002): 113–17. http://dx.doi.org/10.1016/s0042-207x(02)00294-4.

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25

Yim, Chanyoung, Ehsan Rezvani, Shishir Kumar, Niall McEvoy, and Georg S. Duesberg. "Investigation of carbon-silicon Schottky barrier diodes." physica status solidi (b) 249, no. 12 (November 9, 2012): 2553–57. http://dx.doi.org/10.1002/pssb.201200106.

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26

Gusakov, Vasilii E. "General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals." Solid State Phenomena 108-109 (December 2005): 413–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.413.

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A theoretical modelling of the oxygen diffusivity in silicon, germanium and Si1-xGex (O) crystals both at normal and high hydrostatic pressure has been carried out using molecular mechanics, semiempirical and ab initio methods. It was established that the diffusion process of an interstitial oxygen atom (Oi) is controlled by the optimum configuration of three silicon (germanium) atoms nearest to Oi. The calculated values of the activation energy Ea (Si) = 2.59 eV, Ea(Ge) = 2.05 eV and pre-exponential factor D0(Si) = 0.28 cm2 s−1, D0(Ge) = 0.39 cm2 s−1 are in good agreement with experimental ones and for the first time describe perfectly the experimental temperature dependence of the Oi diffusion constant in Si crystals (T = 350–1200 °C). Hydrostatic pressure (P ≤ 80 kbar) results in a linear decrease of the diffusion barrier (∂P Ea (P) = −4.38 × 10−3 eV kbar−1 for Si crystals). The calculated pressure dependence of Oi diffusivity in silicon crystals agrees well with the pressure-enhanced initial growth of oxygen-related thermal donors. The simulation (PM5) has revealed that in Si1-xGex crystals there are two mechanisms of variation of Oi diffusion barrier. The increase of lattice constant leads to the linear increase of the diffusion barrier. Strains around Ge atoms decrease the diffusion barrier. Formation of gradient of diffusion barrier in the volume of Si1-xGex may be responsible for the experimentally observed suppression of generation of TD in Si1-xGex (O) crystals.

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27

Horiguchi, Seiji, and Hideo Yoshino. "Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon." Journal of Applied Physics 58, no. 4 (August 15, 1985): 1597–600. http://dx.doi.org/10.1063/1.336046.

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28

Barba, D., C. Wang, A. Nélis, G. Terwagne, and F. Rosei. "Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier." Journal of Applied Physics 123, no. 16 (April 28, 2018): 161540. http://dx.doi.org/10.1063/1.5002693.

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29

Duong, A. K., and A. G. Nassibian. "Determination of aluminum‐silicon dioxide and silicon‐silicon dioxide barrier heights in a metal‐tunnel insulator‐silicon system." Journal of Applied Physics 57, no. 4 (February 15, 1985): 1256–60. http://dx.doi.org/10.1063/1.334523.

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30

McNutt, Ty, Stephen Van Campen, Andy Walker, Kathy Ha, Chris Kirby, Marc Sherwin, Ranbir Singh, and Harold Hearne. "10 kV Silicon Carbide Junction Barrier Schottky Rectifier." Materials Science Forum 600-603 (September 2008): 951–54. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.951.

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The development of 10 kV silicon carbide (SiC) MOSFETs and Junction Barrier Schottky (JBS) diodes for application to a 13.8kV 2.7 MVA Solid State Power Substation (SSPS) is shown. The design of half-bridge power modules has extensively used simulation, from electron level device simulations to the system level trade studies, to develop the most efficient module for use in the SSPS. In the work presented within, numerical simulations and experimental results are shown to demonstrate the design and operation of 10 kV JBS diodes. It is shown that JBS diodes at 10 kV can reduce 31% of the switching losses at 20 kHz than the fastest SiC PiN diodes.

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31

Ha, Min-Woo, Cheong Hyun Roh, Dae Won Hwang, Hong Goo Choi, Hong Joo Song, Jun Ho Lee, Jung Ho Park, et al. "High-Voltage Schottky Barrier Diode on Silicon Substrate." Japanese Journal of Applied Physics 50, no. 6S (June 1, 2011): 06GF17. http://dx.doi.org/10.7567/jjap.50.06gf17.

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32

Stojanovic, M., P. Osmokrovic, F. Boreli, D. Novković, and R. Webb. "Characteristics of large area silicon surface barrier detectors." Thin Solid Films 296, no. 1-2 (March 1997): 181–83. http://dx.doi.org/10.1016/s0040-6090(96)09334-0.

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33

Werner, J. H., H. Von Känel, G. Markewitz, and R. T. Tung. "Pressure dependences of silicide/silicon Schottky barrier heights." Applied Surface Science 41-42 (January 1990): 159–63. http://dx.doi.org/10.1016/0169-4332(89)90049-4.

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34

Werner, Jürgen H., and Herbert H. Güttler. "Temperature dependence of Schottky barrier heights on silicon." Journal of Applied Physics 73, no. 3 (February 1993): 1315–19. http://dx.doi.org/10.1063/1.353249.

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35

Skucha, Karl, Zhiyong Fan, Kanghoon Jeon, Ali Javey, and Bernhard Boser. "Palladium/silicon nanowire Schottky barrier-based hydrogen sensors." Sensors and Actuators B: Chemical 145, no. 1 (March 4, 2010): 232–38. http://dx.doi.org/10.1016/j.snb.2009.11.067.

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36

Jankowski, A. F., C. K. Saw, C. C. Walton, J. P. Hayes, and J. Nilsen. "Boron–carbide barrier layers in scandium–silicon multilayers." Thin Solid Films 469-470 (December 2004): 372–76. http://dx.doi.org/10.1016/j.tsf.2004.08.153.

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37

Al-Bustani, A. "Switching characteristics of multigrain (polycrystalline silicon) barrier devices." IEEE Transactions on Electron Devices 38, no. 9 (1991): 2092–100. http://dx.doi.org/10.1109/16.83735.

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38

Aboelfotoh, M. O. "On Schottky barrier inhomogeneities at silicide/silicon interfaces." Journal of Applied Physics 69, no. 5 (March 1991): 3351–53. http://dx.doi.org/10.1063/1.348564.

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39

Ha, Min-Woo, Cheong Hyun Roh, Dae Won Hwang, Hong Goo Choi, Hong Joo Song, Jun Ho Lee, Jung Ho Park, et al. "High-Voltage Schottky Barrier Diode on Silicon Substrate." Japanese Journal of Applied Physics 50, no. 6 (June 20, 2011): 06GF17. http://dx.doi.org/10.1143/jjap.50.06gf17.

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40

Khaidar, M., A. Essafti, A. Bennouna, E. L. Ameziane, and M. Brunel. "rf‐sputtered tungsten‐amorphous silicon Schottky barrier diodes." Journal of Applied Physics 65, no. 8 (April 15, 1989): 3248–52. http://dx.doi.org/10.1063/1.342678.

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41

Elevant, T., H. W. Hendel, E. B. Nieschmidt, and L. E. Samuelson. "Silicon surface barrier detector for fusion neutron spectroscopy." Review of Scientific Instruments 57, no. 8 (August 1986): 1763–65. http://dx.doi.org/10.1063/1.1139174.

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42

Tarr, N. Garry. "Noninjecting, high-barrier junctions on p-type silicon." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 723–26. http://dx.doi.org/10.1139/p85-114.

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The fabrication of junctions with very low minority-carrier injection ratios and reasonably good diode characteristics on p-type silicon is reported. These junctions were formed by growing an ultrathin oxide layer on a monocrystalline substrate, depositing polysilicon heavily doped in situ with phosphorus over the oxide, overlaying the polysilicon with aluminum, and then annealing the resulting sandwich structure at temperatures in the range 400–450 °C. The junctions can exhibit leakage current densities below 10−6 A∙cm−2 at moderate reverse bias and reverse breakdown voltages in excess of 20 V. The absence of minority-carrier injection has been demonstrated by diode reverse recovery transient measurements and by the fabrication of bipolar transistors employing these junctions as emitters.

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43

Apollinari, G., S. Belforte, E. Focardi, R. Paoletti, G. Tonelli, and F. Zetti. "Two dimensional tracking with surface barrier silicon detectors." IEEE Transactions on Nuclear Science 36, no. 1 (1989): 46–53. http://dx.doi.org/10.1109/23.34399.

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44

Harris, R. D., and A. J. Frasca. "Proton Irradiation of Silicon Schottky Barrier Power Diodes." IEEE Transactions on Nuclear Science 53, no. 4 (August 2006): 1995–2003. http://dx.doi.org/10.1109/tns.2006.880934.

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45

Bradley, P., W. Ruby, D. Hebert, and T. Van Duzer. "Resonant tunneling in amorphous‐silicon‐barrier Josephson junctions." Journal of Applied Physics 66, no. 12 (December 15, 1989): 5872–79. http://dx.doi.org/10.1063/1.343610.

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46

Zhang, Xintong, Lining Zhang, and Mansun Chan. "Doping enhanced barrier lowering in graphene-silicon junctions." Applied Physics Letters 108, no. 26 (June 27, 2016): 263502. http://dx.doi.org/10.1063/1.4954799.

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47

Suguro, K., Y. Nakasaki, T. Inoue, S. Shima, and M. Kashiwagi. "Reaction kinetics in tungsten/barrier metal/silicon systems." Thin Solid Films 166 (December 1988): 1–14. http://dx.doi.org/10.1016/0040-6090(88)90360-4.

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48

Vojtek, J., J. šikula, and R. Tykva. "Excess noise of the silicon surface barrier detectors." Czechoslovak Journal of Physics 40, no. 11 (November 1990): 1289–92. http://dx.doi.org/10.1007/bf01605058.

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49

Kanno, Ikuo, Katsuhisa Nishio, Takumi Mikawa, Yoshihiro Nakagome, Katsuhei Kobayashi, and Itsuro Kimura. "Resistivity estimation of irradiated silicon surface barrier detector." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 348, no. 2-3 (September 1994): 479–84. http://dx.doi.org/10.1016/0168-9002(94)90784-6.

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50

Sharma, R. P. "Development of high resolution silicon surface barrier detectors." Pramana 31, no. 3 (September 1988): 185–95. http://dx.doi.org/10.1007/bf02848805.

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