Relevant bibliographies by topics / Silicon carbid

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon carbid'

Author: Grafiati
Published: 4 June 2021
Last updated: 17 February 2022

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Journal articles on the topic "Silicon carbid"

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Jung, F., R. Bach, and R. P. Franke. "Electron-microscopic Examination of Silicon-Carbide-coated Endovascular Stents - Elektronenmikroskopische Untersuchung eines Silizium-Carbid-beschichteten endovaskulären Stents." Biomedizinische Technik/Biomedical Engineering 43, no. 3 (1998): 47–52. http://dx.doi.org/10.1515/bmte.1998.43.3.47.

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Argunova, T. S., V. G. Kohn, J. H. Lim, and J. H. Je. "Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast." Crystallography Reports 61, no. 6 (November 2016): 914–17. http://dx.doi.org/10.1134/s1063774516040027.

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Suarsana, Ketut, and Rudy Soenoko. "Hardness, Density and Porosity of Al/(SiCw+Al2O3p) Composite by Powder Metallurgy Process without and with Sintering." Applied Mechanics and Materials 776 (July 2015): 246–52. http://dx.doi.org/10.4028/www.scientific.net/amm.776.246.

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Al/(SiCw+Al2O3p) composite was a blend of fine aluminum powder serving as a matrix while Silicon Carbid whiskers (SiCw) and Alumina (Al2O3p) as a reinforcement. Powder metallurgy was used for the manufacture of composites according to the shape of the test specimen. Parameter testing was conducted with varied sintering holding time of 1 h, 3 h and 6 h at a sintering temperature of 500°C and 600°C. This study was conducted to know hardness properties, density, porosity and SEM analysis. The results show that the sintering process which has been conducted affects the physical and mechanical properties of the composite. Increased hardness and density occur due to the stronger or more dense interface bonding between matrix and reinforcement which are affected by the increase in the holding time and sintering temprature, where the highest is at 6 hours with 600°C, while the porosity decreases inversely proportional to the density and the hardness that occur in composite materials.
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Renlund, Gary M., Svante Prochazka, and Robert H. Doremus. "Silicon oxycarbide glasses: Part II. Structure and properties." Journal of Materials Research 6, no. 12 (December 1991): 2723–34. http://dx.doi.org/10.1557/jmr.1991.2723.

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Silicon oxycarbide glass is formed by the pyrolysis of silicone resins and contains only silicon, oxygen, and carbon. The glass remains amorphous in x-ray diffraction to 1400 °C and shows no features in transmission electron micrographs (TEM) after heating to this temperature. After heating at higher temperature (1500–1650 °C) silicon carbide lines develop in x-ray diffraction, and fine crystalline regions of silicon carbide and graphite are found in TEM and electron diffraction. XPS shows that silicon-oxygen bonds in the glass are similar to those in amorphous and crystalline silicates; some silicons are bonded to both oxygen and carbon. Carbon is bonded to either silicon or carbon; there are no carbon-oxygen bonds in the glass. Infrared spectra are consistent with these conclusions and show silicon-oxygen and silicon-carbon vibrations, but none from carbon-oxygen bonds. 29Si-NMR shows evidence for four different bonding groups around silicon. The silicon oxycarbide structure deduced from these results is a random network of silicon-oxygen tetrahedra, with some silicons bonded to one or two carbons substituted for oxygen; these carbons are in turn tetrahedrally bonded to other silicon atoms. There are very small regions of carbon-carbon bonds only, which are not bonded in the network. This “free” carbon colors the glass black. When the glass is heated above 1400 °C this network composite rearranges in tiny regions to graphite and silicon carbide crystals. The density, coefficient of thermal expansion, hardness, elastic modulus, index of refraction, and viscosity of the silicon oxycarbide glasses are all somewhat higher than these properties in vitreous silica, probably because the silicon-carbide bonds in the network of the oxycarbide lead to a tighter, more closely packed structure. The oxycarbide glass is highly stable to temperatures up to 1600 °C and higher, because oxygen and water diffuse slowly in it.
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Kukartsev, Viktor A., Vladislav V. Kukartsev, and Vadim S. Tynchenko. "Specialty of Сarbon-Carbid-Silicic Mixture Using (UKKS) as Substitute of Re-Carburizing Agent and Ferrosilicon for Grey Iron Melting." Materials Science Forum 946 (February 2019): 696–701. http://dx.doi.org/10.4028/www.scientific.net/msf.946.696.

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In the transition to modern high intensive processes of smelting there had been reversed technologies structures to get carbon content in cast iron. A re-carburizing agent, that can be one of the most significant reasons of occurrence of defects of the cast, and deformed metal and decrease of the level of properties have been identified. There was not only made the decarburizing agent of modern technology of production of pig-iron essential element (particularly synthetic), but also resulted in many of variants of its realization from the standpoint of level decarburizing, type, using re-carburizing method of decarburizing technological phase, where enter of carbonaceous materials. Particularly sharply process of execution re-carburizing influences receipt of synthetic pig-iron in induction crucible furnaces of industrial frequency from metal works, which contained 80-90% of steel breakage. Then, it is necessary to raise the content of carbon from 0,3 to 3,0-3,8% (depending on the pig-iron mark). It forces foundry enterprises to approach with big care at a choice of existing materials, which it is possible to use as decarburizing and to verify carefully, which is appearing at the market. In work application there are considered variants of using carbon-carbide-silicon mixture UKKS-31 at melting of grey pig-iron in induction, crucible furnaces, intended for pig-iron melting. The cost comparison is presented between traditional technology and with using mix UKKS-31.
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Borrell, A., R. Torrecillas, V. G. Rocha, A. Fernández, V. Bonache, and M. D. Salvador. "Propiedades mecánicas y tribológicas de materiales nanoestructurados de carburo de silicio/nanofibras de carbono." Boletín de la Sociedad Española de Cerámica y Vidrio 50, no. 3 (June 30, 2011): 109–16. http://dx.doi.org/10.3989/cyv.152011.

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Maruyama, Benji, and Fumio S. Ohuchi. "H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system." Journal of Materials Research 6, no. 6 (June 1991): 1131–34. http://dx.doi.org/10.1557/jmr.1991.1131.

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Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.
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Zhou, You, Kiyoshi Hirao, Yukihiko Yamauchi, and Shuzo Kanzaki. "OS08W0193 Sliding wear of silicon carbide and silicon carbide-graphite composite ceramics." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS08W0193. http://dx.doi.org/10.1299/jsmeatem.2003.2._os08w0193.

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Chabi, Sakineh, and Kushal Kadel. "Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor." Nanomaterials 10, no. 11 (November 9, 2020): 2226. http://dx.doi.org/10.3390/nano10112226.

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As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.
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Meng, Fan Tao, Shan Yi Du, and Yu Min Zhang. "Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by CVI Process." Key Engineering Materials 512-515 (June 2012): 789–92. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.789.

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Chemical vapor deposition (CVD) is an effective method of preparing silicon carbide whiskers or films and chemical vapor infiltration (CVI) can be successfully used as the preparation of SiC composites. In this paper, silicon carbides whiskers were firstly deposited on substrates of RB-SiC by CVD process and then silicon carbide composites were prepared by chemical vapor infiltration in the SiC whiskers in an upright chemical vapor deposition furnace of Φ150mm×450mm with methyltrichloride silicane (MTS) as precursor gas, H2 as carrier gas and Ar as dilute gas. The morphologies of the SiC whiskers grown on RB-SiC substrate and SiC composites infiltrated in SiC whiskers were determined by scanning electron microscope (SEM), and the crystalline phase of the final deposits were confirmed with X-ray diffractometry (XRD) As a result, the curly defects of whiskers decrease with the addition of dilute gas. And by chemical vapor infiltration in SiC whiskers the, SiC composites were successfully prepared. Finally the deposits were determined as β-SiC.
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Dissertations / Theses on the topic "Silicon carbid"

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Skokan, Jan. "Vliv plastifikátoru na technologii zpracování a vlastnosti slinovaného keramického mateiálu na bázi SiC." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2015. http://www.nusl.cz/ntk/nusl-231997.

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This master’s thesis deals with an influence of physical properties and machining technology at adjustment to the basic composition granules and production of technical ceramics. Selected series of experiments have been applied to the different phases of production. Composition of the granules vary according to the used plasticizer and ranks to RTP (ready-to-press) materials. The goal of this thesis is recomendation to the production of RTP granules and next experiments.
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Martinelli, Antonio Eduardo. "Diffusion bonding of silicon carbide and silicone nitride to molybdenum." Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=40191.

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This study focuses on various aspects of solid-state diffusion bonding of two ceramic-metal combinations, namely: silicon carbide-molybdenum (SiC-Mo), and silicon nitride-molybdenum (Si$ rm sb3N sb4$-Mo). Single SiC-Mo and $ rm Si sb3N sb4$-Mo joints were produced using hot-uniaxial pressing. The microstructure of the resulting interfaces were characterized by image analysis, scanning electron microscopy (SEM), electron probe micro-analysis (EPMA), and X-ray diffraction (XRD). The mechanical properties of the joints were investigated using shear strength testing, depth sensing nanoindentation, and neutron diffraction for residual stress measurement.
SiC was solid-state bonded to Mo at temperatures ranging from 1000$ sp circ$C to 1700$ sp circ$C. Diffusion of Si and C into Mo resulted in a reaction layer containing two main phases: $ rm Mo sb5Si sb3$ and Mo$ sb2$C. At temperatures higher than 1400$ sp circ$C diffusion of C into $ rm Mo sb5Si sb3$ stabilized a ternary phase of composition $ rm Mo sb5Si sb3$C. At 1700$ sp circ$C, the formation of MoC$ rm sb{1-x}$ was observed as a consequence of bulk diffusion of C into Mo$ sb2$C. A maximum average shear strength of 50 MPa was obtained for samples hot-pressed at 1400$ sp circ$C for 1 hour. Higher temperatures and longer times contributed to a reduction in the shear strength of the joints, due to the excessive growth of the interfacial reaction layer. $ rm Si sb3N sb4$ was joined to Mo in vacuum and nitrogen, at temperatures between 1000$ sp circ$C and 1800$ sp circ$C, for times varying from 15 minutes to 4 hours. Dissociation of $ rm Si sb3N sb4$ and diffusion of Si into Mo resulted in the formation of a reaction layer consisting, initially, of $ rm Mo sb3$Si. At 1600$ sp circ$C (in vacuum) Mo$ sb3$Si was partially transformed into $ rm Mo sb5Si sb3$ by diffusion of Si into the original silicide, and at higher temperatures, this transformation progressed extensively within the reaction zone. Residual N$ sb2$ gas, which originated from the decomposition of $ rm Si sb3N sb4,$ dissolved in the Mo, however, most of the gas escaped during bonding or remained trapped at the original $ rm Si sb3N sb4$-Mo interface, resulting in the formation of a porous layer. Joining in N$ sb2$ increased the stability of $ rm Si sb3N sb4,$ affecting the kinetics of the diffusion bonding process. The bonding environment did not affect the composition and morphology of the interfaces for the partial pressures of N$ sb2$ used. A maximum average shear strength of 57 MPa was obtained for samples hot-pressed in vacuum at 1400$ sp circ$C for 1 hour.
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Al-ajrash, Saja M. Nabat. "Processing of Carbon–Silicon Carbide Hybrid Fibers." University of Dayton / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1575987386019875.

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Kortegaard, Nielsen Hanne. "Capacitance transient measurements on point defects in silicon and silicol carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-211.

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Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. The defects have mainly been studied by deep level transient spectroscopy (DLTS) which is a quantitative, electrical characterization method highly suitable for point defect studies. The method is based on measurements of capacitance transients and both standard DLTS and new applications of the technique have been used.

In silicon, a fundamental understanding of diffusion phenomena, like room-temperature migration of point defects and transient enhanced diffusion (TED), is still incomplete. This thesis presents new results which brings this understanding a step closer. In the implantation-based experimental method used to measure point defect migration at room temperature, it has been difficult to separate the effects of defect migration and ion channeling. For various reasons, the effect of channeling has so far been disregarded in this type of experiments. Here, a very simple method to assess the amount of channeling is presented, and it is shown that channeling dominates in our experiments. It is therefore recommended that this simple test for channeling is included in all such experiments. This thesis also contains a detailed experimental study on the defect distributions of vacancy and interstitial related damage in ion implanted silicon. Experiments show that interstitial related damage is positioned deeper (0.4 um or more) than vacancy related damage. A physical model to explain this is presented. This study is important to the future modeling of transient enhanced diffusion.

Furthermore, the point defect evolution in low-fluence implanted 4H-SiC is investigated, and a large number of new defect levels has been observed. Many of these levels change or anneal out at temperatures below 300 C, which is not in accordance with the general belief that point defect diffusion in SiC requires high temperatures. This thesis also includes an extensive study on a metastable defect which we have observed for the first time and labeled the M-center. The defect is characterized with respect to DLTS signatures, reconfiguration barriers, kinetics and temperature interval for annealing, carrier capture cross sections, and charge state identification. A detailed configuration diagram for the M-center is presented.

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Li, Tianbo. "Characteristics of Graphite Films on Silicon- and Carbon-Terminated Faces of Silicon Carbide." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/14024.

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Ultrathin graphite films, with thickness from 1-30 atomic layers, are grown on the Si-terminated and C-terminated faces of 6H-SiC and 4H-SiC via thermal desorption of silicon in an ultrahigh vacuum (UHV) chamber or in a high-vacuum RF furnace. Graphite LEED patterns and atom-resolved STM images on graphite films prove that epitaxial growth is achieved on both faces of the SiC substrate. The thickness of graphite films is estimated with modeling the Si:C Auger peak intensities. Through LEED and STM investigations of monolayer graphite grown on the Si-face of SiC(0001) surface, we show the existence of a SiC 6R3*6R3 reconstructed layer between graphite films and the SiC substrate. The complicated LEED patterns can be interpreted partially by the kinematic scattering of the interfacial layer and the 6*6 surface corrugation. Further scanning tunneling spectroscopy (STS) measurements indicate that the graphite films remain continuous over the steps between domains. Carbon nanotubes and carbon nanocaps cover about 40% of the graphitized C-face of SiC. The remaining areas are flat graphite films. Graphite ribbons were made through E-beam lithography. After the lithography process, the graphitic features remain on flat region underneath HSQ residues.
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Ahmed, Asher Shafiq. "Characterisation of a silicon carbide coated low density carbon-carbon composite." Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501192.

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Wu, Jiali. "Fabrication and characterisation ceramic matrix continuous fibre reinforced composites by sol-gel processing." Thesis, University of Sheffield, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.387765.

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Colston, Gerard B. "Wafer scale heteroepitaxy of silicon carbon and silicon carbide thin films and their material properties." Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/103470/.

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For years now, many have believed the solution to reducing the cost of the wide bandgap compound semiconductor silicon carbide (SiC) is to grow its cubic form (3C-SiC) heteroepitaxially on silicon (Si). This has the potential to reduce cost, increase wafer size and integrate SiC with Si technology. After decades of research, 3C-SiC grown on Si is still yet to penetrate the commercial market as the process is plagued with various issues such as very high growth temperatures, thermal stresses, high cost, poor epitaxial material quality and poor scalability to wafer sizes beyond 100 mm diameter. The first section of this thesis starts with a focus on the traditional, high temperature growth of 3C-SiC carried out in the first industrial type SiC based reduced pressure chemical vapour deposition (RP-CVD) reactor installed in a UK University. After the process demonstrated little promise for mass scale implementation into the semiconductor industry, a radical change in strategy was made. The research pivoted away from SiC and instead focussed on silicon carbon alloys (Si1-yCy) with carbon (C) contents in the range of 1-3%. Si1-yCy has a range of applications in strain engineering and reducing contact resistance, differing from 3C- SiC quite significantly. Crystalline alloys with C contents around 1.5% were achieved using an industry standard Si based RP-CVD growth system. Analysis was carried out on the defects that form due to the saturation of C in higher content alloys. The high temperature annealing of Si1-yCy resulted in out diffusion of C and traces of 3C-SiC growth which presented itself as a potential buffer layer for 3C-SiC epitaxy. Through the careful selection of growth precursors and process optimisation, high crystalline quality 3C-SiC was grown heteroepitaxially on Si within the industry standard Si based RP-CVD and in-depth material characterisation has been carried out using a vast range of techniques. High levels of electrically active dopants were incorporated into the 3C-SiC and its electrical properties were investigated. Various investigations were carried out on suspended 3C-SiC and Si1-yCy films including strain and tilt measurements through micro X-ray diffraction and the effect of thickness and doping on their optical properties. The results led to a greater understanding of suspended films and provide a foundation for a number of applications in microelectromechanical systems (MEMS) and optical devices. Further material growth research was carried out on Si1-yCy multilayers, selective epitaxy of 3C-SiC and the growth of 3C-SiC on suspended growth platforms. Each topic presents an interesting area for further research. The research presented demonstrates new, state of the art 3C-SiC heteroepitaxial material and its basic structural, electrical and optical properties. A new low-cost and scalable process has been developed for the heteroepitaxial growth of 3C-SiC on Si substrates up to 100 mm with a clear path to scaling the technology up to 200 mm and beyond. Not only does the developed technology have a high commercial impact, it also paves the way for many interesting future research topics, some of which have been briefly investigated as part of this work.
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ABEL, JOAO L. "Obtencao do carboneto de silicio pela reducao carbotermica da silica." reponame:Repositório Institucional do IPEN, 2009. http://repositorio.ipen.br:8080/xmlui/handle/123456789/9443.

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Kausar, Rehana. "Surface studies of silicon carbide deposition on carbon and tungsten substrates." Thesis, University of Salford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314000.

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Books on the topic "Silicon carbid"

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Choyke, W. J., H. Matsunami, and G. Pensl, eds. Silicon Carbide. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1.

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Friedrichs, Peter, Tsunenobu Kimoto, Lothar Ley, and Gerhard Pensl, eds. Silicon Carbide. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2009. http://dx.doi.org/10.1002/9783527629053.

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Friedrichs, Peter, Tsunenobu Kimoto, Lothar Ley, and Gerhard Pensl, eds. Silicon Carbide. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2009. http://dx.doi.org/10.1002/9783527629077.

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Brauer, Samuel. Advanced structural fibers from precursors: Carbon, silicon carbide. Norwalk, CT: Business Communications Co., 1997.

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Dobson, M. M. Silicon carbide alloys. Carnforth, Lancashire, England: Parthenon Press, 1986.

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Silicon, Carbide Symposium (1987 Columbus Ohio). Silicon carbide '87. Westerville, Ohio: American Ceramic Society, 1989.

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Dobson, M. M. Silicon carbide alloys. Carnforth, Lancashire: Parthenon Press, 1986.

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Fan, Jiyang, and Paul K. Chu. Silicon Carbide Nanostructures. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08726-9.

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Vanger, Sofia H. Silicon carbide: New materials, production methods, and applications. Hauppauge, N.Y: Nova Science Publishers, 2010.

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Razzell, A. G. Silicon carbide fibre silicon nitride matrix composites. [s.l.]: typescript, 1992.

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Book chapters on the topic "Silicon carbid"

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Gooch, Jan W. "Silicon Carbide." In Encyclopedic Dictionary of Polymers, 664. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_10647.

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Achtziger, N., and W. Witthuhn. "Radiotracer Deep Level Transient Spectroscopy." In Silicon Carbide, 537–61. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_22.

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Starke, Ulrich. "Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems." In Silicon Carbide, 375–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch15.

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Veliadis, Victor. "1200 V SiC Vertical-Channel-JFETs and Cascode Switches." In Silicon Carbide, 157–91. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch7.

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Bechstedt, F., J. Furthmüller, U. Grossner, and C. Raffy. "Zero- and Two-Dimensional Native Defects." In Silicon Carbide, 3–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_1.

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Schöner, A. "New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide." In Silicon Carbide, 229–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_10.

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Lindner, J. K. N. "Formation of SiC Thin Films by Ion Beam Synthesis." In Silicon Carbide, 251–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_11.

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Starke, U. "Atomic Structure of SiC Surfaces." In Silicon Carbide, 281–316. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_12.

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Mönch, W. "The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide." In Silicon Carbide, 317–41. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_13.

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Afanas’ev, V. V., F. Ciobanu, G. Pensl, and A. Stesmans. "Contributions to the Density of Interface States in SiC MOS Structures." In Silicon Carbide, 343–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_14.

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Conference papers on the topic "Silicon carbid"

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Sun, Ellen Y., Harry E. Eaton, John E. Holowczak, and Gary D. Linsey. "Development and Evaluation of Environmental Barrier Coatings for Silicon Nitride." In ASME Turbo Expo 2002: Power for Land, Sea, and Air. ASMEDC, 2002. http://dx.doi.org/10.1115/gt2002-30628.

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Environmental barrier coatings (EBCs) are required for applications of silicon nitride (Si3N4) and silicon carbide (SiC) based materials in gas turbine engines because of the accelerated oxidation of Si3N4 and SiC and subsequent volatilization of silica in the high temperature high-pressure steam environment. EBC systems for silicon carbide fiber reinforced silicon carbide ceramic matrix composites (SiC/SiC CMC’s) were first developed and have been demonstrated via long-term engine tests. Recently, studies have been carried out at United Technologies Research Center (UTRC) to understand the temperature capability of the current celsian-based EBC systems and its suitability for silicon nitride ceramics concerning thermal expansion mismatch between the EBC coating and silicon nitride substrates. This paper will present recent progress in improving the temperature capability of the celsian –based EBC systems and discuss their effectiveness for silicon nitride.
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Pui Li, Bill, John Gerald, Jin Zou, and Ying Chen. "Synthesis of Silicon Carbide Nanowires on Carbon Nanotube Template." In 2006 International Conference on Nanoscience and Nanotechnology. IEEE, 2006. http://dx.doi.org/10.1109/iconn.2006.340549.

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Arnold, Gerald E. "Exploring the Potential for the Application of Ceramic Bearing Technology to the Wheel/Rail Interface." In ASME/IEEE 2007 Joint Rail Conference and Internal Combustion Engine Division Spring Technical Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/jrc/ice2007-40043.

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Ball or roller bearings have much in common with a railway wheel running on a rail. Both have high Hertzian stresses and are subject to rolling contact fatigue. Silicone Nitride (Si3N4), a Technical Ceramic, has now firmly established itself in the engineering marketplace as part of a hybrid bearing, where the rolling elements are silicone nitride and the races are steel. The paper explores the possibility of a Silicon Nitride/steel wheel/rail combination and finds that, because Silicon Nitride has a higher Modulus of Elasticity, it is not suitable as a direct replacement on existing systems, because it would produce a smaller contact patch and greater contact stress. The low toughness of Silicon Nitride in comparison to steel could be an obstacle to its general railway use, however, it could made into a composite material in the same manner as Carbon Reinforced Silicon Carbide (C/SiC) is used in brake discs. There is a possibility that, under the right conditions, Silicon Nitride could return very low wear rates, because of its extreme hardness, and because it’s excellent resistance to rolling contact fatigue (noted in hybrid bearings). This could give a wheel high mileage, without the need to remove fatigued material by controlled wear or by turning. A promising future application for the material is a cable-hauled system, where the predicted lower adhesion between Silicon Nitride and a steel rail is not a problem and the wheels are not required to be conductive.
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Redkin, Sergey, Petr Maltsev, and Sergey Gamkrelidze. "CUBIC SILICON CARBIDE ON SILICON." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1557.silicon-2020/62-68.

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A basic technology for cubic silicon carbide (3C-SiC) formation on silicon (Si) plates in high-frequency (HF and HFI) and very-high-frequency (microwave) discharges at low pressure has been developed. It is found that 3C-SiC layers formation on Si should be multiple staged, but integrated, i.e. sequential change of stages should be performed without working chamber deevacuating and accompanied only by changing modes, gaseous media and applying electrical displacement. The following technological mixtures have been proposed: SiF4 + CF4 + Ar; SiF4 + CH4 + Ar.
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Elias, Husna, Koay Mei Hyie, A. Kalam, and Noorleha Abd Rahman. "Conversion of biomorphic silicon carbide from wood powders carbon template." In INTERNATIONAL CONFERENCE ON ADVANCED SCIENCE, ENGINEERING AND TECHNOLOGY (ICASET) 2015: Proceedings of the 1st International Conference on Advanced Science, Engineering and Technology. Author(s), 2016. http://dx.doi.org/10.1063/1.4965112.

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Mitchel, William C., John Boeckl, David Tomlin, Weijie Lu, John Rigueur, and Jonathan Reynolds. "Growth of carbon nanotubes by sublimation of silicon carbide substrates." In Integrated Optoelectronic Devices 2005, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2005. http://dx.doi.org/10.1117/12.590456.

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Lin, Qiang. "Silicon Carbide Photonics." In Latin America Optics and Photonics Conference. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/laop.2014.ltu3a.3.

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Lescoat, F., F. Tanguy, and P. Durand. "Silicon carbide metallization." In 2016 ESA Workshop on Aerospace EMC (Aerospace EMC). IEEE, 2016. http://dx.doi.org/10.1109/aeroemc.2016.7504558.

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KLEPPING, A. "Evaluation of silicon carbide converted carbon components for liquidrocket engine applications." In 22nd Joint Propulsion Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1986. http://dx.doi.org/10.2514/6.1986-1499.

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McClain, Monique S., Ibrahim E. Gunduz, and Steven F. Son. "Additive Manufacturing of Carbon Fiber Reinforced Silicon Carbide Solid Rocket Nozzles." In AIAA Scitech 2019 Forum. Reston, Virginia: American Institute of Aeronautics and Astronautics, 2019. http://dx.doi.org/10.2514/6.2019-0408.

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Reports on the topic "Silicon carbid"

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House, M. B., and P. S. Day. Ultrasonic characterization of microwave joined silicon carbide/silicon carbide. Office of Scientific and Technical Information (OSTI), May 1997. http://dx.doi.org/10.2172/319834.

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Jim Sterbentz. ANALYTICAL NEUTRONIC STUDIES CORRELATING FAST NEUTRON FLUENCE TO MATERIAL DAMAGE IN CARBON, SILICON, AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), June 2011. http://dx.doi.org/10.2172/1023963.

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Jan W. Nowok, John P. Hurley, and John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), June 2000. http://dx.doi.org/10.2172/824976.

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Katoh, Yutai, Takaaki Koyanagi, Jim Kiggans, Nesrin Cetiner, and Joel McDuffee. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS. Office of Scientific and Technical Information (OSTI), September 2014. http://dx.doi.org/10.2172/1164258.

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Hamza, A. V., and M. Balooch. Growth of silicon carbide on silicon via reaction of sublimed fullerenes and silicon. Office of Scientific and Technical Information (OSTI), February 1996. http://dx.doi.org/10.2172/231594.

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Sundberg, G. J. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II. Office of Scientific and Technical Information (OSTI), January 1994. http://dx.doi.org/10.2172/814549.

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Davis, Robert F., Salah Bedair, Jill Little, Robert Macintosh, and Joe Sumakeris. Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide via Extraction/Exchange Processes. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada231348.

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Bleier, A. Dispersion aspects of silicon carbide gelcasting. Office of Scientific and Technical Information (OSTI), September 1991. http://dx.doi.org/10.2172/5003295.

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Mackowski, Kristin Nicole, Joshua Damon Coe, Katie A. Maerzke, and Sven Peter Rudin. Equation of State for Silicon Carbide. Office of Scientific and Technical Information (OSTI), August 2018. http://dx.doi.org/10.2172/1467226.

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Radhakrishnan, Rahul. Integrated Silicon Carbide Power Electronic Block. Office of Scientific and Technical Information (OSTI), November 2017. http://dx.doi.org/10.2172/1408273.

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