Journal articles: 'Silicon carbid'

1

Jung, F., R. Bach, and R. P. Franke. "Electron-microscopic Examination of Silicon-Carbide-coated Endovascular Stents - Elektronenmikroskopische Untersuchung eines Silizium-Carbid-beschichteten endovaskulären Stents." Biomedizinische Technik/Biomedical Engineering 43, no. 3 (1998): 47–52. http://dx.doi.org/10.1515/bmte.1998.43.3.47.

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2

Argunova, T. S., V. G. Kohn, J. H. Lim, and J. H. Je. "Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast." Crystallography Reports 61, no. 6 (November 2016): 914–17. http://dx.doi.org/10.1134/s1063774516040027.

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3

Suarsana, Ketut, and Rudy Soenoko. "Hardness, Density and Porosity of Al/(SiCw+Al₂O₃p) Composite by Powder Metallurgy Process without and with Sintering." Applied Mechanics and Materials 776 (July 2015): 246–52. http://dx.doi.org/10.4028/www.scientific.net/amm.776.246.

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Al/(SiCw+Al2O3p) composite was a blend of fine aluminum powder serving as a matrix while Silicon Carbid whiskers (SiCw) and Alumina (Al2O3p) as a reinforcement. Powder metallurgy was used for the manufacture of composites according to the shape of the test specimen. Parameter testing was conducted with varied sintering holding time of 1 h, 3 h and 6 h at a sintering temperature of 500°C and 600°C. This study was conducted to know hardness properties, density, porosity and SEM analysis. The results show that the sintering process which has been conducted affects the physical and mechanical properties of the composite. Increased hardness and density occur due to the stronger or more dense interface bonding between matrix and reinforcement which are affected by the increase in the holding time and sintering temprature, where the highest is at 6 hours with 600°C, while the porosity decreases inversely proportional to the density and the hardness that occur in composite materials.

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4

Renlund, Gary M., Svante Prochazka, and Robert H. Doremus. "Silicon oxycarbide glasses: Part II. Structure and properties." Journal of Materials Research 6, no. 12 (December 1991): 2723–34. http://dx.doi.org/10.1557/jmr.1991.2723.

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Silicon oxycarbide glass is formed by the pyrolysis of silicone resins and contains only silicon, oxygen, and carbon. The glass remains amorphous in x-ray diffraction to 1400 °C and shows no features in transmission electron micrographs (TEM) after heating to this temperature. After heating at higher temperature (1500–1650 °C) silicon carbide lines develop in x-ray diffraction, and fine crystalline regions of silicon carbide and graphite are found in TEM and electron diffraction. XPS shows that silicon-oxygen bonds in the glass are similar to those in amorphous and crystalline silicates; some silicons are bonded to both oxygen and carbon. Carbon is bonded to either silicon or carbon; there are no carbon-oxygen bonds in the glass. Infrared spectra are consistent with these conclusions and show silicon-oxygen and silicon-carbon vibrations, but none from carbon-oxygen bonds. 29Si-NMR shows evidence for four different bonding groups around silicon. The silicon oxycarbide structure deduced from these results is a random network of silicon-oxygen tetrahedra, with some silicons bonded to one or two carbons substituted for oxygen; these carbons are in turn tetrahedrally bonded to other silicon atoms. There are very small regions of carbon-carbon bonds only, which are not bonded in the network. This “free” carbon colors the glass black. When the glass is heated above 1400 °C this network composite rearranges in tiny regions to graphite and silicon carbide crystals. The density, coefficient of thermal expansion, hardness, elastic modulus, index of refraction, and viscosity of the silicon oxycarbide glasses are all somewhat higher than these properties in vitreous silica, probably because the silicon-carbide bonds in the network of the oxycarbide lead to a tighter, more closely packed structure. The oxycarbide glass is highly stable to temperatures up to 1600 °C and higher, because oxygen and water diffuse slowly in it.

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Kukartsev, Viktor A., Vladislav V. Kukartsev, and Vadim S. Tynchenko. "Specialty of Сarbon-Carbid-Silicic Mixture Using (UKKS) as Substitute of Re-Carburizing Agent and Ferrosilicon for Grey Iron Melting." Materials Science Forum 946 (February 2019): 696–701. http://dx.doi.org/10.4028/www.scientific.net/msf.946.696.

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In the transition to modern high intensive processes of smelting there had been reversed technologies structures to get carbon content in cast iron. A re-carburizing agent, that can be one of the most significant reasons of occurrence of defects of the cast, and deformed metal and decrease of the level of properties have been identified. There was not only made the decarburizing agent of modern technology of production of pig-iron essential element (particularly synthetic), but also resulted in many of variants of its realization from the standpoint of level decarburizing, type, using re-carburizing method of decarburizing technological phase, where enter of carbonaceous materials. Particularly sharply process of execution re-carburizing influences receipt of synthetic pig-iron in induction crucible furnaces of industrial frequency from metal works, which contained 80-90% of steel breakage. Then, it is necessary to raise the content of carbon from 0,3 to 3,0-3,8% (depending on the pig-iron mark). It forces foundry enterprises to approach with big care at a choice of existing materials, which it is possible to use as decarburizing and to verify carefully, which is appearing at the market. In work application there are considered variants of using carbon-carbide-silicon mixture UKKS-31 at melting of grey pig-iron in induction, crucible furnaces, intended for pig-iron melting. The cost comparison is presented between traditional technology and with using mix UKKS-31.

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Borrell, A., R. Torrecillas, V. G. Rocha, A. Fernández, V. Bonache, and M. D. Salvador. "Propiedades mecánicas y tribológicas de materiales nanoestructurados de carburo de silicio/nanofibras de carbono." Boletín de la Sociedad Española de Cerámica y Vidrio 50, no. 3 (June 30, 2011): 109–16. http://dx.doi.org/10.3989/cyv.152011.

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7

Maruyama, Benji, and Fumio S. Ohuchi. "H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system." Journal of Materials Research 6, no. 6 (June 1991): 1131–34. http://dx.doi.org/10.1557/jmr.1991.1131.

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Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.

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8

Zhou, You, Kiyoshi Hirao, Yukihiko Yamauchi, and Shuzo Kanzaki. "OS08W0193 Sliding wear of silicon carbide and silicon carbide-graphite composite ceramics." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS08W0193. http://dx.doi.org/10.1299/jsmeatem.2003.2._os08w0193.

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9

Chabi, Sakineh, and Kushal Kadel. "Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor." Nanomaterials 10, no. 11 (November 9, 2020): 2226. http://dx.doi.org/10.3390/nano10112226.

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As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.

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10

Meng, Fan Tao, Shan Yi Du, and Yu Min Zhang. "Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by CVI Process." Key Engineering Materials 512-515 (June 2012): 789–92. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.789.

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Chemical vapor deposition (CVD) is an effective method of preparing silicon carbide whiskers or films and chemical vapor infiltration (CVI) can be successfully used as the preparation of SiC composites. In this paper, silicon carbides whiskers were firstly deposited on substrates of RB-SiC by CVD process and then silicon carbide composites were prepared by chemical vapor infiltration in the SiC whiskers in an upright chemical vapor deposition furnace of Φ150mm×450mm with methyltrichloride silicane (MTS) as precursor gas, H2 as carrier gas and Ar as dilute gas. The morphologies of the SiC whiskers grown on RB-SiC substrate and SiC composites infiltrated in SiC whiskers were determined by scanning electron microscope (SEM), and the crystalline phase of the final deposits were confirmed with X-ray diffractometry (XRD) As a result, the curly defects of whiskers decrease with the addition of dilute gas. And by chemical vapor infiltration in SiC whiskers the, SiC composites were successfully prepared. Finally the deposits were determined as β-SiC.

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Yang, Lu, Ke Hua Zhang, Guang Zhen Zheng, and Hang Guo. "Preparation and Processing Performance of Viscoelastic Abrasive Flow." Key Engineering Materials 546 (March 2013): 55–59. http://dx.doi.org/10.4028/www.scientific.net/kem.546.55.

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Abstract. Abrasive flow machining (AFM) is an advanced technology which can improve the uniform consistency of profiled surface. First, the dielectric characteristics of the abrasive flow (the medium features include medium types, medium viscosity coefficient, the concentration of medium and abrasive, abrasive type, abrasive size) is studied, abrasive flow including different medium is deployed by mixing and mix well of the polymer silicone fluid, silicone oil, wax, and other fats, and adding silicon carbide with different particle size and mixed for processing experiment. Within the limits of the workpiece polishing, the change direction of the surface roughness and the removal rate of workpiece surface are substantially same and approaching the linear relationship, the lowest surface roughness Ra of SiC (abrasive particle size is 200#) reduced from 3.5μm to 0.5μm. The hardness and durability of the silicon carbide abrasive in this study is quite good, and the price is low, the processing characteristics are quite consistent with the economic costs on the demand.

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12

Weijie Deng, Weijie Deng. "Polishing silicon modification layer on silicon carbide surface by ion beam figuring." Chinese Optics Letters 12, s2 (2014): S22206–322209. http://dx.doi.org/10.3788/col201412.s22206.

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13

Ureña, A., E. Otero, M. V. Utrilla, and P. Rodrigo. "Mecanismos de corrosión en materiales compuestos de matriz de aluminio con refuerzo de SiC." Boletín de la Sociedad Española de Cerámica y Vidrio 43, no. 2 (April 30, 2004): 233–36. http://dx.doi.org/10.3989/cyv.2004.v43.i2.510.

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14

Vlaskin, V. I. "Nanocrystalline silicon carbide films for solar cells." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 3 (September 30, 2016): 273–78. http://dx.doi.org/10.15407/spqeo19.03.273.

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15

Zhao, Hong Sheng, Zhong Guo Liu, Kai Hong Zhang, Zi Qiang Li, and Xiao Xue Liu. "Formation Mechanism of Porous Silicon Carbide Ceramic Synthesized by Coat-Mix Process." Advanced Materials Research 284-286 (July 2011): 1412–16. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.1412.

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Porous silicon carbide ceramics were prepared by coat mix process using silicon powders and phenolic resin as silicon and carbon resource. The formation mechanism of silicon carbide was proposed based on the liquid silicon infiltration mechanism, reaction dynamics and thermodynamics analysis. Results show that the formation of silicon carbide by the coat mix process includes the following phases. 1) Infiltration of liquid silicon into porous carbon gap. 2) Formation of silicon carbide particles through the contact and reaction between liquid silicon and silicon surface. 3) Fracture and falling off of silicon carbide layer from the carbon surface. 4) Formation of new silicon carbide layer and particles. 5) The repetition of phase 3) and phase 4) till the reaction is complete and the porous silicon carbide ceramics are formed.

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16

Chen, Zheng Fei, Y. C. Su, and Yi Bing Cheng. "Formation and Sintering Mechanisms of Reaction Bonded Silicon Carbide-Boron Carbide Composites." Key Engineering Materials 352 (August 2007): 207–12. http://dx.doi.org/10.4028/www.scientific.net/kem.352.207.

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Reaction sintering of boron carbide represents an attractive densification process. In this work, sintering mechanisms of silicon carbide and boron carbide composites were studied. Mixed boron carbide/graphite mixtures were sintered in a vacuumed graphite furnace between 1380 and 1450oC. The samples were in contact with bulk silicon metal which melts at 1410oC. Reaction sequence of the composition was investigated by X-ray diffraction, SEM and TEM. It was found that a reaction between molten silicon and B4C occurred and the reaction produced silicon carbide and silicon-containing boron carbide. Dense composites can be achieved by pressureless sintering at 1450oC and the final microstructure consists of silicon carbide, boron carbide, silicon-containing boron carbide and residual silicon at grain boundaries.

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17

Mitchell, Tyrone, Lutgard C. Jonghe, Warren J. MoberlyChan, and Robert O. Ritchie. "Silicon Carbide Platelet/Silicon Carbide Composites." Journal of the American Ceramic Society 78, no. 1 (January 1995): 97–103. http://dx.doi.org/10.1111/j.1151-2916.1995.tb08366.x.

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18

Tomila, T. V., M. V. Vlasova, M. G. Kakazey, K. L. Vyshnyakova, A. V. Ragulya, and L. N. Pereselentseva. "Fine defective structure of silicon carbide powders obtained from different starting materials." Science of Sintering 38, no. 2 (2006): 177–81. http://dx.doi.org/10.2298/sos0602177t.

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The fine defective structure of silicon carbide powders obtained from silicic acid-saccharose, aerosil-saccharose, aerosil-carbon black, and hydrated cellulose-silicic acid gel systems was investigated. The relation between IR absorption characteristics and the microstructure of SiC particles obtained from different starting materials was established. The numerical relationship between the lattice parameter a and the frequency ?TO is presented.

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19

Kmetz, Michael, Steven Suib, and Francis Galasso. "Silicon Carbide/Silicon and Silicon Carbide/Silicon Carbide Composites Produced by Chemical Vapor Infiltration." Journal of the American Ceramic Society 73, no. 10 (October 1990): 3091–93. http://dx.doi.org/10.1111/j.1151-2916.1990.tb06723.x.

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20

Zvonarev, E. V., A. Ph Ilyushchanka, Zh A. Vitko, V. A. Osipov, and D. V. Babura. "Effect of reaction sintering modes on the structure and properties of carbide ceramics." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, no. 4 (January 12, 2019): 407–15. http://dx.doi.org/10.29235/1561-8358-2018-63-4-407-415.

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Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of the reaction-sintered ceramics based on carbides are largely determined by the quality of impregnation of the porous carbide frame with silicon, which depends on the total and open porosity, shape and size of the pores of the compact, the composition of the charge from the carbide powder. High-temperature sintering, followed by impregnation of the carbide frame with silicon and its interaction with the carbon constituent of the frame, largely determines the properties of the material. The main task in the implementation of this process is to create conditions that ensure the full filling of pores in the initial compact during impregnation with silicon melt and, secondly, maximum activation of chemical interaction between the melt of silicon, carbon and other components that compose the charge. A complex of studies on the effect of compacting pressure and annealing temperature of the charge based on silicon carbide and boron powders with the addition of graphite on the pore structure of the compact and the quality of its impregnation with a silicon melt has been carried out in this work. It has been shown that the density, bending strength, hardness of ceramics based on silicon carbide and boron carbide obtained by reaction sintering are increased with a rise in compacting pressure of carbide frames. The optimum porosity of the carbide frame is 25–30 %; the pore size is 1.0–1.5 μm. It has been also demonstrated that ceramics based on boron carbide and boron carbide with 50 % silicon carbide impregnated with silicon at high-temperature sintering has higher strength and hardness values than those based on silicon carbide due to higher adhesion strength at the interface of boron carbide particles and binder, caused by the dissolution of boron carbide in the silicon melt and the formation of complex carbide particles on the surface.

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Habuka, Hitoshi, Yusuke Fukumoto, Kosuke Mizuno, Yuuki Ishida, and Toshiyuki Ohno. "Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor." Materials Science Forum 821-823 (June 2015): 125–28. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.125.

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The silicon carbide CVD reactor cleaning process was studied by means of detaching silicon carbide particles, which was formed on the silicon carbide coated carbon susceptor surface during the silicon carbide film deposition. The contact points between the particles and the susceptor surface were etched using chlorine trifluoride gas at temperatures lower than 290 °C for 120 min. During this process, the carbon susceptor covered with the silicon carbide coating film suffered from little damage while achieving cleaning.

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22

Thirupathaiah, C., and Sanjeev Reddy K. Hudgikar. "Effect of Silicon Carbide Boron Carbide and Fly-Ash Particles on Aluminium Metal Matrix Composite." Advances in Science and Technology 106 (May 2021): 26–30. http://dx.doi.org/10.4028/www.scientific.net/ast.106.26.

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The current paper deals about the fabrication of composite material is to combine the desirable attributes of metals and ceramics. Aluminium 6063 used as a base material in combination with the Silicon carbide ,Boron carbide and fly-ash were used as reinforcement material. Our intention is to increased or enhanced properties of pure Aluminium 6063 by addition of Silicon Carbide ,Boron Carbide and fly-ash. The process of fabrication composite material is prepared by using stir casting method. In this paper, addition of Silicon Carbide 1% , Boron Carbide 1% and fly-ash1% with aluminium increasing percentage ratio the mechanical properties of composite material is enhanced, so it is clear that the effect of Silicon Carbide , Boron Carbide and fly-ash were helpful to increasing properties of pure Aluminium by addition. The influence of reinforced ratio of silicon carbide, Boron carbide and fly-ash particles on mechanical behavior was examined. The effect of different weight percentage of silicon carbide, Boron carbide and fly-ash in composite on tensile strength, hardness, microstructure was studied. It was observed that the hardness & tensile strength of the composites increased with increasing reinforcement elements addition in it. The distribution of silicon carbide, Boron carbide and fly-ash particles was uniform in aluminum.

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23

Kriegesmann, J., and Matthias Schumacher. "Silicon Carbide Fiber Reinforced Recrystallized Silicon Carbide." Key Engineering Materials 264-268 (May 2004): 1063–66. http://dx.doi.org/10.4028/www.scientific.net/kem.264-268.1063.

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24

Masri, Pierre. "Silicon carbide and silicon carbide-based structures." Surface Science Reports 48, no. 1-4 (November 2002): 1–51. http://dx.doi.org/10.1016/s0167-5729(02)00099-7.

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25

Kumar, K. J. Santhosh, and Rajaneesh N. Marigoudar. "Comparative study of cutting force development during the machining of un-hybridized and hybridized ZA43 based metal matrix composites." Journal of the Mechanical Behavior of Materials 28, no. 1 (December 17, 2019): 146–52. http://dx.doi.org/10.1515/jmbm-2019-0016.

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AbstractIn the present study, turning of two grades of composites such as ZA43 silicon carbide and ZA43 silicon carbide and graphite was carried out. The fabrication of both categories of composites were done using stir casting technique. The silicon carbide of grit size 60μm with concentration of 5% was reinforced for one category of the composite and for the other grade of composite, 5% silicon carbide and graphite were added. Thus fabricated materials were turned on a conventional lathe using coated carbide tools (SNMG). Dry turning of the fabricated composite was carried out with varying cutting parameters. Measurement of cutting force was done for the both compositions of fabricated materials using lathe tool dynamometer. It was observed that, while machining composite containing silicon carbide and graphite, tool experience more cutting force than composite containing silicon carbide alone.

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26

Bansal, Shubhranshu, and J. S. Saini. "Mechanical and Wear Properties of SiC/Graphite Reinforced Al359 Alloy-based Metal Matrix Composite." Defence Science Journal 65, no. 4 (July 20, 2015): 330. http://dx.doi.org/10.14429/dsj.65.8676.

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Al359 alloy was reinforced with Silicon Carbide and Silicon Carbide/Graphite particles using stir casting process. Thereafter their mechanical and wear properties were investigated. It was found that the hardness of the Al359-Silicon Carbide composite is better than Al359-Silicon Carbide-Graphite composite. The Silicon Carbide/Graphite reinforced composite exhibits a superior ultimate tensile strength against Silicon Carbide reinforced composite. The wear test was conducted at different loading, sliding velocities and sliding distances conditions. Results showed that the wear resistance of Al359 alloy increased with the reinforcement of Silicon Carbide/Graphite material for higher loading, sliding velocities and sliding distance conditions. SEM images of the worn surface of the pin were examined to study their wear mechanism.Defence Science Journal, Vol. 65, No. 4, July 2015, pp. 330-338, DOI: http://dx.doi.org/10.14429/dsj.65.8676

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27

Гращенко, А. С., С. А. Кукушкин, and А. В. Осипов. "Исследование упругих свойств пленок SiC, синтезированных на подложках Si методом замещения атомов." Физика твердого тела 61, no. 12 (2019): 2313. http://dx.doi.org/10.21883/ftt.2019.12.48590.33ks.

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The elastic properties of a nanoscale film of silicon carbide grown on a silicon substrate by atom substitution are studied. For the first time, the Young's modulus of nanoscale silicon carbide was measured by nanoindentation. Using optical profilometry and spectral ellipsometry, the structural characteristics of a silicon carbide film on silicon were studied, namely, the film roughness and its thickness were calculated.

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Suyama, Shoko, and Yoshiyasu Itoh. "High-Strength Reaction-Sintered Silicon Carbide for Large-Scale Mirrors - Effect of Surface Oxide Layer on Bending Strength." Advances in Science and Technology 63 (October 2010): 374–82. http://dx.doi.org/10.4028/www.scientific.net/ast.63.374.

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Reaction-sintered silicon carbide of 800 MPa class bending strength had been newly developed. The developed silicon carbide showed good rigidity, high thermal conductivity, and high density, like a conventional sintered silicon carbide. The developed silicon carbide is one of the most attractive materials for large-scale ceramic structures because of its low processing temperature, good shape capability, low-cost processing and high purity. We had fabricated some lightweight space mirrors, such as a high-strength reaction-sintered silicon carbide mirror of 650 mm in diameter. In this study, experiments were conducted to investigate the effect of annealing on the bending strength of high-strength reaction-sintered silicon carbide. The annealing heat treatments were carried out at 1073 K, 1273 K, and 1473 K in an air atmosphere. The maximum bending strength of 1091 MPa at room temperature was achieved by the annealing heat-treatment at 1273 K for 10 h in air. We confirmed that annealing heat treatment was effective to improve the bending strength of reaction-sintered silicon carbide by inducing compressive residual stress at the surface oxide layer.

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KMETZ, M., S. SUIB, and F. GALASSO. "ChemInform Abstract: Silicon Carbide/Silicon and Silicon Carbide/Silicon Carbide Composites Produced by Chemical Vapor Infiltration." ChemInform 22, no. 2 (August 23, 2010): no. http://dx.doi.org/10.1002/chin.199102375.

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Astashenkova, Olga N., Andrej V. Korlyakov, and Victor V. Luchinin. "Micromechanics Based on Silicon Carbide." Materials Science Forum 740-742 (January 2013): 998–1001. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.998.

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This paper describes using of silicon carbide for micromechanical systems. Low stressed sensitive membrane signal converters, thin film transducers and piezoresistive sensors were formed based on silicon carbide films. The mechanical properties of silicon carbide films were determined.

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31

Conway, Arthur. "Silicon carbide." Resources Policy 12, no. 3 (September 1986): 286. http://dx.doi.org/10.1016/0301-4207(86)90038-3.

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32

Qian, J., G. Voronin, T. W. Zerda, D. He, and Y. Zhao. "High-pressure, high-temperature sintering of diamond–SiC composites by ball-milled diamond–Si mixtures." Journal of Materials Research 17, no. 8 (August 2002): 2153–60. http://dx.doi.org/10.1557/jmr.2002.0317.

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A new method of sintering diamond-silicon carbide composites is proposed. This method is an alternate to the liquid silicon infiltration technique and is based on simultaneous ball milling of diamond and silicon powder mixtures. Composites with fine-grain diamonds embedded in a diamond–SiC nanocrystalline matrix were sintered from these mixtures. Scanning electron microscopy, x-ray diffraction, and Raman scattering were used to characterize the ball-milled precursors and the sintered composites. It was found that the presence of diamond micron-size particles in the initial powder mixture promotes milling of silicone particles and their transformation into the amorphous state. Mechanical properties of the composites, sintered from mixtures of different ball-milling history at different pressure–temperature conditions, (6 GPa/1400 °C and 8 GPa/2000 °C) were studied.

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33

Noorina, Hidayu Jamil, W. H. Xian, W. M. Arif, Che Pa Faizul, and Mohd Zaki Ruhiyuddin. "Production of Silicon Carbide via Grinding and Heat Treatment Process." Key Engineering Materials 594-595 (December 2013): 740–44. http://dx.doi.org/10.4028/www.scientific.net/kem.594-595.740.

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This study is to determine the properties and characterization of silicon carbide via grinding and heat treatment process. In this study, the raw materials used were waste glass and graphite powder. Silicon carbide was produced by milling and mixing waste glass and graphite powder in different grinding mills; planetary mill and ring mill. The samples were then heat treated at 700 °C for 1 hour soaking time. Two types of characterization procedures were completed to determine the properties and microstructure of silicon carbide. Formation of silicon carbide was only formed through grinding by planetary mill but not ring mill. This may due to the grinding mechanism of both mills. Due to the simple and low cost of raw material to form silicon carbide, silicon carbide has high potential to be one of the commercialized products. It has the potential in reducing waste and improves the environment quality.

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Wang, Xiao Hong, Qiao Gang Hu, Shi Yu Zhong, Teng Dang, Hai Lun Wang, and Yuan Hua Lin. "Effect of Nickel-Modified SiC Particles on Compressive Damage of SiCp / 7075 Composites." Materials Science Forum 944 (January 2019): 705–13. http://dx.doi.org/10.4028/www.scientific.net/msf.944.705.

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The wettability between silicon carbide and aluminum is poor, silicon carbide is difficult to fuse or the distribution of silicon carbide is not uniform in the ingot when the SiCp / 7075 composite is prepared by melt casting.The surface modification of SiCp by nickel plating can significantly reduce the wetting angle of SiC/Al and improve the distribution uniformity of silicon carbide in SiCp / 7075. In this thesis, the thermal compression process 6.5% SiCp / 7075 reinforced by nickel-plated modified silicon carbide is simulated by DEFOEM-3D software.The influence of the shape and particle size of nickel-plated modified silicon carbide on its compressive damage has been highlighted, and the deformation characteristics of the SiC/Ni/Al interface layer in the thermal compression process have been discussed. The numerical simulation results show that the 6.5% SiCp / 7075 reinforced by spherical nickel-plated modified silicon carbide particles with a particle size of 15 μm has the smallest compression damage value of 0.0426, at this point the compression temperature is 400°C, the compression ratio is 15, and the compression rate is 0.03s-1. the hot compression test of 6.5% SiCp / 7075 reinforced by spherical nickel-plated modified silicon carbide particles with a particle size of 15 μm was performed by using the same compression parameters as the numerical simulation. After hot pressing, the sample had a smooth surface with few obvious cracks, which was consistent with the numerical simulation results. Key words: nickel-plating modification; silicon carbide particles; compressive damage; grain size; grain morphology

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Ma, Kai. "Silicon-Based Anode with High Capacity and Performance Produced by Magnesiothermic Coreduction of Silicon Dioxide and Hexachlorobenzene." Journal of Electrochemical Science and Technology 12, no. 3 (August 31, 2021): 317–22. http://dx.doi.org/10.33961/jecst.2020.01662.

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Silicon (Si) has been considered as a promising anode material because of its abundant reserves in nature, low lithium ion (Li+) intercalation/de-intercalation potential (below 0.5 V vs. Li/Li+) and high theoretical capacity of 4200 mA h/g. In this paper, we prepared a silicon-based (Si-based) anode material containing a small amount of silicon carbide by using magnesiothermic coreduction of silica and hexachlorobenzene. Because of good conductivity of silicon carbide, the cycle performance of the silicon-based anode materials containing few silicon carbide is greatly improved compared with pure silicon. The raw materials were formulated according to a silicon-carbon molar ratio of 10:0, 10:1, 10:2 and 10:3, and the obtained products were purified and tested for their electrochemical properties. After 1000 cycles, the specific capacities of the materials with silicon-carbon molar ratios of 10:0, 10:1, 10:2 and 10:3 were still up to 412.3 mA h/g, 970.3 mA h/g, 875.0 mA h/g and 788.6 mA h/g, respectively. Although most of the added carbon reacted with silicon to form silicon carbide, because of the good conductivity of silicon carbide, the cycle performance of silicon-based anode materials was significantly better than that of pure silicon.

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Varela Feria, F. M., A. R. De Arellano López, and J. Martínez Fernández. "Fabricación y propiedades del carburo de silicio biomórfico: maderas cerámicas." Boletín de la Sociedad Española de Cerámica y Vidrio 41, no. 4 (August 30, 2002): 377–84. http://dx.doi.org/10.3989/cyv.2002.v41.i4.669.

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Sulardjaka, Sri Nugroho, Suyanto, and Deni Fajar Fitriana. "Investigation of Mechanical Properties of Al7Si/ SiC and Al7SiMg/SiC Composites Produced by Semi Solid Stir Casting Technique." MATEC Web of Conferences 159 (2018): 02036. http://dx.doi.org/10.1051/matecconf/201815902036.

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Mechanical characteristic of silicon carbide particle reinforced aluminum matrix composites produced by semi solid stir casting technique was investigated. Al7Si and Al7SiMg were used as metal matrix. High purity silicon carbida with average particle size mesh 400 was used as reinforcement particle. Aluminum matrix composites with variation of SiC: 5 %, 7.5 % and 10 % wt were manufactured by the semi solid stir casting technique. Stiring process was performed by 45 ° degree carbide impeller at rotation of 600 rpm and temperature of 570 °C for 15 minutes. Characteritation of composites speciment were: microscopic examination, density, hardness, tensile and impact test. Hardness and density were tested randomly at top, midlle and bottom of composites product. Based on distribution of density, distribution of hardness and SEM photomicrograph, it can be concluded that semisolid stir casting produces the uniform distribution of particles in the matrix alloy. The results also indicate that introducing SiC reinforcement in aluminum matrix increases the hardness of Al7Si composite and Al7SiMg composite. Calculated porosities increases with increasing wt % of SiC reinforcements in composite. The addition of 1 % Mg also increases the hardness of composites, reduces porosities of composite and enhances the mechanical properties of composites.

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Hakim, Kaustubh, Wim van Westrenen, and Carsten Dominik. "Capturing the oxidation of silicon carbide in rocky exoplanetary interiors." Astronomy & Astrophysics 618 (October 2018): L6. http://dx.doi.org/10.1051/0004-6361/201833942.

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Context. Theoretical models predict the condensation of silicon carbide around host stars with C/O ratios higher than 0.65 (cf. C/OSun = 0.54), in addition to its observations in meteorites, interstellar medium and protoplanetary disks. Consequently, the interiors of rocky exoplanets born from carbon-enriched refractory material are often assumed to contain large amounts of silicon carbide. Aims. Here we aim to investigate the stability of silicon carbide in the interior of carbon-enriched rocky exoplanets and to derive the reaction leading to its transformation. Methods. We performed a high-pressure high-temperature experiment to investigate the reaction between a silicon carbide layer and a layer representative of the bulk composition of a carbon-enriched rocky exoplanet. Results. We report the reaction leading to oxidation of silicon carbide producing quartz, graphite, and molten iron silicide. Combined with previous studies, we show that in order to stabilize silicon carbide, carbon saturation is not sufficient, and a complete reduction of Fe2+ to Fe0 in a planetary mantle is required, suggesting that future spectroscopic detection of Fe2+ or Fe3+ on the surface of rocky exoplanets would imply the absence of silicon carbide in their interiors.

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Makornpan, Chalermkwan, Charusporn Mongkolkachit, Suda Wanakitti, and Thanakorn Wasanapiarnpong. "Fabrication of Silicon Carbide from Rice Husk by Carbothermal-Reduction and In Situ Reaction Bonding Technique." Key Engineering Materials 608 (April 2014): 235–40. http://dx.doi.org/10.4028/www.scientific.net/kem.608.235.

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Silicon carbide (SiC) ceramics were prepared by carbothermal reduction together with in-situ reaction bonding. Raw rice husk was carbonized in an incineration furnace. The carbonized rice husk was ground and was then treated with hydrochloric acid by varying concentrations. The sample powders were mixed with silicon metal powder and pyrolyzed at various temperatures in either argon or nitrogen atmosphere. Silicon carbide phase was found in all pyrolyzed samples. Cristobalite was found in argon atmosphere pyrolyzed samples while silicon oxynitride was found in the samples pyrolyzed in nitrogen atmosphere at lower than 1500 °C. Silicon carbide whisker is the main phase on the surface of pyrolyzed sample. Increasing pyrolysis temperatures decreased the amount and size of silicon carbide whisker but increased the silicon carbide particle. Porosity and weight loss of samples after pyrolysis were increased with increasing temperatures due to the reaction in the system.

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Ohji, Tatsuki. "High-Temperature Reliability of Advanced Ceramics." Journal of Energy Resources Technology 123, no. 1 (October 30, 2000): 64–69. http://dx.doi.org/10.1115/1.1347990.

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This paper describes high-temperature reliability, particularly creep and creep rupture behavior of three engineering ceramics—silicon nitride, silicon carbide, and alumina-based silicon-carbide-particulate ceramics—which are considered the most potential candidates for the use of blades of high-efficiency ceramic gas turbine. The structural reliability of silicon nitride is very often limited due to the softening of glassy phases formed at grain boundaries. On the other hand, silicon carbide, which generally does not contain glassy phase at the grain boundaries, shows excellent creep resistance even at very high temperatures. Finally, it is shown that creep resistance of alumina can be markedly improved by dispersing nano-sized silicon carbide particles into the grain boundary.

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Ji, Shi Jun, Lei Lei Liu, Ji Zhao, and Jin Chao Li. "Finite Element Simulation about Abrasive Belt Grinding Silicon Carbide." Key Engineering Materials 679 (February 2016): 27–32. http://dx.doi.org/10.4028/www.scientific.net/kem.679.27.

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Silicon carbide, a high-strength material, has a ductile-brittle transition mechanism. In order to establish a reasonable silicon carbide abrasive belt grinding parameters to obtain high precision silicon carbide free-surface efficiently, a series of finite element simulations were conducted to comprehend the single point diamond grinding of silicon carbide using professional analysis software of nonlinear finite element in this paper. According to the differences of cutting parameter, such as cutting depth, cutting deformation of the chip and the maximum cutting force were studied. For the free-form surface with higher accuracy, the data showed that ductile machining of silicon carbide is more efficient along with the larger rake angle, the higher cutting speed and the smaller cutting depth.

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Lin, Yung Jen, and Shin Yi Shen. "Fabrication of Alumina and Silicon Carbide Fibers from Carbon Fibers." Materials Science Forum 561-565 (October 2007): 603–6. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.603.

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Carbon fibers of ~9 μ m in diameter were used as templates to fabricate alumina and silicon carbide fibers. The carbon fibers were placed in a vacuum furnace with aluminum and heated at 1100°C for 8 h to form aluminum carbide. Then, the aluminum carbide fibers were oxidized in air at 1500°C. The resulted fibers were hollow and the alumina layer was porous in the interior. To fabricate silicon carbide fiber, carbon fibers were reacted with Si at 1300°C -1500°C in Ar. The thickness of silicon carbide layers increased with reaction temperature and reaction time. Solid fibers could be obtained after reaction at 1400°C for 4 h. In contrast to porous alumina layer, the silicon carbide layer/fibers were dense. The porous alumina hollow fibers were fragile while the solid silicon carbide fibers were flexible. BET surface area measurements revealed that the porous alumina had surface area as high as ~100 m2/g.

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Rahman, Noor Leha Abdul, Koay Mei Hyie, Anizah Kalam, W. D. Teng, and Husna Elias. "Microstructure Characterization on Silicon Carbide Formation from Natural Wood." Applied Mechanics and Materials 799-800 (October 2015): 179–82. http://dx.doi.org/10.4028/www.scientific.net/amm.799-800.179.

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Dark red meranti and kapur,are two important types of wood in Malaysia were used as precursors to fabricate porous silicon carbide. A carbon template was produced by pyrolysis at 850oC in an oxygen free atmosphere. The carbon template was further subjected to infiltration process with silicon. The infiltration process was carried out in a tube furnace in argon flow at 1500oC with two different holding times; 2 hours and 3 hours. Thermo gravimetric analysis was done to investigate the decomposition behavior of the two species. The resulting silicon carbide was characterized by XRD. The formation of silicon carbide and also excess silicon were found. The microstructure was characterized by scanning electron microscope (SEM). An increase in holding time during infiltration increased the density as well as formation of silicon carbide (SiC). Dark red meranti precursor is likely suitable for production of silicon carbide compared to kapur due to the higher SiC

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Tsai, Yen-Cheng, Chen-Yang Hsu, and Rome-Ming Wu. "Applications of Membrane Hydrocyclone Recovery of Silicon Carbide Powder." Proceedings of Engineering and Technology Innovation 14 (January 1, 2020): 39–44. http://dx.doi.org/10.46604/peti.2020.4205.

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This work investigated the possibility of using membrane hydrocyclone as a separator to recover the silicon carbide powder. The weight percentage of silicon carbide powder is 62.9%. Classifying these powders by a 2.5 cm-diameter hydrocyclone that equips membrane tube in the center position, overflow and underflow are obtained. The results of the primary separation show that the overflow and underflow are about half of the proportion of solid, but silicon carbide powder content in the overflow is higher. Therefore, it is necessary to consider the recovery of silicon carbide powder contained in the overflow.

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Kodama, Hironori, Hiroshi Sakamoto, and Tadahiko Miyoshi. "Silicon Carbide Monofilament-Reinforced Silicon Nitride or Silicon Carbide Matrix Composites." Journal of the American Ceramic Society 72, no. 4 (April 1989): 551–58. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06174.x.

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Mizuno, Kosuke, Hitoshi Habuka, Yuuki Ishida, and Toshiyuki Ohno. "In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor." Materials Science Forum 858 (May 2016): 237–40. http://dx.doi.org/10.4028/www.scientific.net/msf.858.237.

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The in situ cleaning process of a silicon carbide epitaxial reactor was developed using chlorine trifluoride gas for removing the film-type silicon carbide deposition formed on a susceptor. By adjusting the etching temperature to less than 330 °C, the formed silicon carbide films could be removed without significant damage to the susceptor.

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Bragin, A. V., D. V. Pyanzin, R. I. Sidorov, and D. A. Skvortsov. "Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network." Computer Optics 44, no. 4 (August 2020): 653–59. http://dx.doi.org/10.18287/2412-6179-co-660.

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Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them. A method is proposed for recognizing and analyzing a dislocation structure of single crystal silicon carbide based on the use of optical microscopy and a direct distribution neural network. The method was tested on homoepitaxial lay-ers of 4H-polytype silicon carbide. Software has been developed that allows building maps of the dislocation structure distribution over the surface of single crystal silicon carbide. The software was tested on digital images of the surface of silicon carbide epitaxial layers. The accuracy of recognition of dislocation structure was 95%. The dislocation mapping is used in the development of process technologies for reducing their density during the growth of single crystals.

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Zhao, Dong Lin, Lei Zhang, and Zeng Min Shen. "Processing and Characterization of Nano Silicon Carbide Ceramics via Precursor Pyrolysis." Key Engineering Materials 434-435 (March 2010): 162–64. http://dx.doi.org/10.4028/www.scientific.net/kem.434-435.162.

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Nano silicon carbide ceramics were prepared via precursor pyrolysis. Polycarbosilane (PCS) and divinylbenzene (DVB) were selected as a precursor to silicon carbide ceramics and a cross-linking reagent for PCS, respectively. The cross-linking properties and pyrolysis of PCS and DVB were investigated by changing the mass ratios of PCS/DVB. The mass ratio of PCS/DVB has a great effect on silicon carbide ceramic yield. The cured PCS/DVB with a mass ratio of 1:0.5 has the highest SiC ceramic yield (63.1%) at the temperature up to 1500 °C and its pyrolyzates consiste of nano silicon carbide with a diameter of 10-40 nm. The microstructures of the nano silicon carbide ceramics were characterized by SEM and XRD. The pyrolysis behavior of the cured PCS/DVB was characterized by thermogravimetry in nitrogen atmosphere.

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Jin, Jie, Maolin Ni, and Shen Hao Wang. "Structure and Properties Study of Porous Silicon Carbide Composite Based on SLA." Advanced Materials Research 194-196 (February 2011): 1590–93. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.1590.

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In the article, porous silicon carbide composite is prepared based on stereo lithography apparatus (SLA). The microstructure of porous silicon carbide composite is characterized by mean of scanning electron microscopy (SEM). The properties of porous silicon carbide composite are studied, such as surface HV and corrosion resistance, and the influence of the pore agent content to mechanical properties.

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Makornpan, Chalermkwan, Charusporn Mongkolkachit, Suda Wanakitti, and Thanakorn Wasanapiarnpong. "Effect of Sintering Additive and Pyrolysis Temperatures on Porous Silicon Carbide." Key Engineering Materials 659 (August 2015): 85–89. http://dx.doi.org/10.4028/www.scientific.net/kem.659.85.

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Rice husk was used as a raw material to fabricate silicon carbide (SiC) ceramics. Carbothermal reduction was used together with in-situ reaction bonding as the preparation method. Rice husk was carbonized at the temperature around 700 °C in an incineration furnace. Carbonized rice husk was ground and treated with hydrochloric acid solution. After grinding, the sample powders were mixed with silicon metal powder and sintering additives (alumina (Al2O3) and magnesia (MgO)). The mixed powders were pressed and then pyrolyzed at various temperatures and pyrolysis patterns in argon atmosphere. Silicon carbide, as the main crystalline phase, was obtained in all pyrolized samples. Cristobalite was found together with silicon carbide in the samples which pyrolized only lower than 1500 °C. Amount of silicon carbide particle was increased at higher pyrolysis temperature while silicon carbide whisker was decreased. Weight loss, shrinkage and porosity of the pyrolized samples were investigated. Weight loss and shrinkage of the samples increased when increasing pyrolysis temperature while porosity decreased.

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Journal articles on the topic 'Silicon carbid'

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