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Dissertations / Theses on the topic 'Silicon carbide MOSFET switches'

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Published: 5 June 2025

Last updated: 1 August 2025

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1

Kozak, Joseph Peter. "Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/104874.

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As power conversion technology is being integrated further into high-reliability environments such as aerospace and electric vehicle applications, a full analysis and understanding of the system's robustness under operating conditions inside and outside the safe-operating-area is necessary. The robustness of power semiconductor devices, a primary component of power converters, has been traditionally evaluated through qualification tests that were developed for legacy silicon (Si) technologies. However, new devices have been commercialized using wide bandgap (WBG) semiconductors including silic

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2

Mihăilă, Andrei-Petru. "Silicon carbide high power field effect transistor switches." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614951.

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3

Berthou, Maxime. "Implementation of high voltage Silicon Carbide rectifiers and switches." Phd thesis, INSA de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00770661.

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In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors.

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4

Hologne, Malorie. "Contribution to condition monitoring of Silicon Carbide MOSFET based Power Module." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSE1317/document.

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L’avion plus électrique demande des modules de puissances de plus en plus performants dans les domaines de la fiabilité et de la maîtrise de la durée de vie restante. Le remplacement des systèmes hydrauliques et pneumatiques par des actionneurs électriques et leurs convertisseurs associés est, aujourd’hui, un moyen efficace de réduire les coûts de maintenance et la consommation de carburant. L’ajout de composantes électriques est également un bon moyen d’augmenter la fiabilité des systèmes. La fiabilité est toujours étudiée à partir de contraintes cycliques accélérées. La tendance actuelle est

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5

Nam, David. "Characterization, Reliability and Packaging for 300 °C MOSFET." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/104896.

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Silicon carbide (SiC) is a wide bandgap material capable of higher voltage and higher temperature operation compared to its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the limitations of standard packaging. Additionally, there are reliability issues relating to the gate oxide region of the MOSFET, which is exacerbated through high temperature conditions. In this

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6

Hjelm, Mats. "Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3700.

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<p>The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. A wide range of simulation methods exists, andthe method used in each case is selected according to therequirements of the work performed. For simulations of newsemiconductor materials, extremely small devices, or deviceswhere non-equilibrium transport is important, the Monte Carlo(MC) me

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7

Cheong, Kuan Yew, and n/a. "Silicon Carbide as the Nonvolatile-Dynamic-Memory Material." Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20050115.101233.

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This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1][7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metaloxidesemiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10][15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity p

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8

Cheong, Kuan Yew. "Silicon Carbide as the Nonvolatile-Dynamic-Memory Material." Thesis, Griffith University, 2004. http://hdl.handle.net/10072/367177.

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This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1]–[7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metal–oxide–semiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10]–[15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity p

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9

Speer, Kevin M. "The Silicon Carbide Vacuum Field-Effect Transistor (VacFET)." Case Western Reserve University School of Graduate Studies / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427.

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10

Kelkar, Kapil S. "Silicon carbide as a photoconductive switch material for high power applications." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4469.

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Thesis (Ph. D.) University of Missouri-Columbia, 2006.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 3, 2007) Includes bibliographical references.

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11

Cooperstock, David Michael. "Design, construction, and implementation of a high voltage, pulsed power test bed for the study of GaAs and SiC optically triggered switches /." free to MU campus, to others for purchase, 2004. http://wwwlib.umi.com/cr/mo/fullcit?p1421126.

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12

Romero, Amy Marie. "Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/93744.

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Wide-bandgap semiconductors have made and are continuing to make a major impact on the power electronics world. The most common commercially available wide-bandgap semiconductors for power electronics applications are SiC and GaN devices. This paper focuses on the newest devices emerging that are made with these wide-bandgap materials. The static and dynamic characterization of six different SiC MOSFETs from different manufacturers are presented. The static characterization consists of the output characteristics, transfer characteristics and device capacitances. High temperature (up to 150 °

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13

Raszmann, Emma Barbara. "Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control." Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/95938.

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This work investigates the voltage scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel topologies, two-level switching topologies are of interest due to less complex circuitry, higher density, and simpler control techniques. In this work, to balance the voltage between series-connected MOSFETs, device turn-off speeds are dynamically controlled on active gate-drive

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14

DiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.

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This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General Electric, Fairchild Semiconductor, GeneSiC Semiconductor, Infineon Technologies, and SemiSouth Laboratories. To carry out this work, static characterization of each device was performed from 25 ºC to 200 ºC. Dynamic charact

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15

He, Ting. "SILICON CARBIDE (SiC) NANOELECTROMECHANICAL SYSTEMS (NEMS) FOR STEEP-SUBTHRESHOLD-SLOPE LOGIC DEVICES WITH LONGEVITY." Case Western Reserve University School of Graduate Studies / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=case1434640099.

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16

Linewih, Handoko, and h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET." Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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17

Linewih, Handoko. "Design and Application of SiC Power MOSFET." Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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18

Al, Kzair Christian. "SiC MOSFET function in DC-DC converter." Thesis, Uppsala universitet, Elektricitetslära, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-415147.

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This thesis evaluate the state of art ROHM SCT3080KR silicon carbide mosfet in a synchronous buck converter. The converter was using the ROHM P02SCT3040KR-EVK-001 evaluation board for driving the mosfets in a half bridge configuration. Evaluation of efficiency, waveforms, temperature and a theoretical comparison between a silicon mosfet (STW12N120K5) is done. For the efficiency test the converter operate at 200 V input voltage and 100 V output voltage at output currents of 7 A to 12 A, this operation was tested at switching frequencies of 50 kHz, 80 kHz and 100 kHz. The result of the efficienc

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19

Ralston, Parrish Elaine. "Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/36169.

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There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0â 40V) and high voltage (40â 5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET,

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20

Peftitsis, Dimosthenis, Jang-Kwon Lim, Jacek Rabkowski, Georg Tolstoy, and Hans-Peter Nee. "Experimental Comparison of Different Gate-Driver Configurations for Parallel-Connection of Normally-ON SiC JFETs." KTH, Elektrisk energiomvandling, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-104800.

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Due to the low current ratings of the currently available silicon carbide (SiC) switches they cannot be employed in high-power converters. Thus, it is necessary to parallel-connect several switches in order to reach higher current ratings. This paper presents an investigation of parallel-connected normally-on SiC junction field effect transistors. There are four crucial parameters affecting the effectiveness of the parallel-connected switches. However, the pinch-off voltage and the reverse breakdown voltage of the gates seem to be the most important parameters which affect the switching perfor

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21

Cairnie, Mark A. Jr. "Bayesian Optimization of PCB-Embedded Electric-Field Grading Geometries for a 10 kV SiC MOSFET Power Module." Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/103566.

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A finite element analysis (FEA) driven, automated numerical optimization technique is used to design electric field grading structures in a PCB-integrated bus bar for a 10 kV bondwire-less silicon-carbide (SiC) MOSFET power module. Due to the ultra-high-density of the power module, careful design of field-grading structures inside the bus bar is required to mitigate the high electric field strength in the air. Using Bayesian optimization and a new weighted point-of-interest (POI) cost function, the highly non-uniform electric field is efficiently optimized without the use of field integration,

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22

Dimarino, Christina Marie. "Design and Validation of a High-Density 10 kV Silicon Carbide MOSFET Power Module with Reduced Electric Field Strength and Integrated Common-Mode Screen." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/86596.

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Electricity is the fastest-growing type of end-use energy consumption in the world, and its generation and usage trends are changing. Hence, the power electronics that control the flow and conversion of electrical energy are an important research area. Advanced power electronics with improved efficiency, power density, reliability, and functionality are critical in data center, transportation, motor drive, renewable energy, and grid applications, among others. Wide-bandgap power semiconductors are enabling power electronics to meet these growing demands, and have thus begun appearing in comme

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23

Chen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.

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Mes travaux de thèse dans les laboratoires SATIE de ENS de Cachan et Ampère de l’INSA de Lyon se sont déroulés dans le cadre du projet Gestion OptiMisée de l'Energie (GENOME) pour étudier le potentiel de certains composants de puissance (JFET, MOSFET et BJT) en carbure de silicium (SiC) dans des convertisseurs électroniques de puissance dédiés à des applications aéronautiques suite au développement de l'avion plus électrique. La première partie de mes travaux étudie la robustesse de MOSFET et BJT en SiC soumis à des régimes de court circuit. Pour les MSOFET SiC, en soumettant ces transistors à

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24

Mbarek, Safa. "Fiabilité et analyse physique des défaillances des composants électroniques sous contraintes électro-thermiques pour des applications en mécatronique." Thesis, Normandie, 2017. http://www.theses.fr/2017NORMR142/document.

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L’amélioration des systèmes de conversion d’énergie rend les dispositifs à base de SiC très attractifs pour leur efficacité, compacité et robustesse. Cependant, leur comportement en réponse à un défaut de court-circuit doit être soigneusement étudié pour assurer la fiabilité des systèmes. Ce travail de recherche porte sur les problèmes de robustesse et de fiabilité du MOSFET SiC sous contraintes de court-circuit. Cette étude repose sur des caractérisations électriques et microstructurales. La somme de toutes les caractérisations avant, pendant et après les tests de robustesse ainsi que l’analy

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25

Niemeier, Dennis [Verfasser], Michael [Akademischer Betreuer] Schröter, Stefan [Gutachter] Heinen, and Henning [Gutachter] Feick. "Device Simulation and Analytical Modeling of Weak Harmonic Distortion in Bulk Silicon Radio Frequency MOSFET Switches / Dennis Niemeier ; Gutachter: Stefan Heinen, Henning Feick ; Betreuer: Michael Schröter." Dresden : Technische Universität Dresden, 2021. http://d-nb.info/1233867792/34.

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Fabre, Joseph. "Étude et mise en œuvre de modules de puissance MOSFET SiC pour leurs futures utilisations dans des convertisseurs ferroviaires." Thesis, Toulouse, INPT, 2013. http://www.theses.fr/2013INPT0112/document.

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Le Carbure de Silicium (SiC) va permettre de repousser les limites des convertisseurs dans trois directions : tenue en tension élevée, haute température de fonctionnement et forte vitesse de commutation. Aujourd’hui, les premiers modules MOSFET SiC sont disponibles sur le marché et semblent prometteurs. L’objectif de ces travaux de thèse consiste plus particulièrement à mettre en œuvre des montages permettant de caractériser ces premiers modules de puissance MOSFET SiC en vue de les utiliser dans les convertisseurs ferroviaires. Le premier chapitre est consacré à l’état de l’art d’une chaîne d

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Onambélé, Essono Ela Charles. "Conception de convertisseurs de puissance pour applications contraignantes." Electronic Thesis or Diss., Amiens, 2018. http://www.theses.fr/2018AMIE0013.

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L'utilisation de systèmes multiphasés de conversion électromécanique connaît une croissance continue dans divers domaines comme l'énergie et l'électrification des transports. Cette thèse vise à proposer des solutions technologiquement viables permettant de concevoir des convertisseurs de puissance adaptés à des applications contraignantes tant vis-à-vis des performances qu'à l'environnement physique: haut rendement, haute température ambiante, volume réduit, modularité, etc. Les technologies de composants semi - conducteurs à large bande interdite sont étudiées (carbure de silicium et nitrure

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Danilovic, Milisav. "Active Source Management to Maintain High Efficiency in Resonant Conversion over Wide Load Range." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/76618.

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High-frequency and large amplitude current is a driving requirement for applications such as induction heating, wireless power transfer, power amplifier for magnetic resonant imaging, electronic ballasts, and ozone generators. Voltage-fed resonant inverters are normally employed, however, current-fed (CF) resonant inverters are a competitive alternative when the quality factor of the load is significantly high. The input current of a CF resonant inverter is considerably smaller than the output current, which benefits efficiency. A simple, parallel resonant tank is sufficient to create a high-p

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Dbeiss, Mouhannad. "Mission Profile-Based Accelerated Ageing Tests of SiC MOSFET and Si IGBT Power Modules in DC/AC Photovoltaic Inverters." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT020/document.

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Dans le cas des installations photovoltaïques, l’onduleur est le premier élément défaillant dont il est difficile d’anticiper la panne, et peu d’études ont été faites sur la fiabilité de ce type de convertisseur. L'objectif de cette thèse est de proposer des outils et méthodes en vue d'étudier le vieillissement des modules de puissance dans ce type d'application en se focalisant sur les phénomènes de dégradation liés à des aspects thermomécaniques. En règle générale, le vieillissement accéléré des modules de puissance est effectué dans des conditions aggravées de courant (Cyclage Actif) ou de

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Boumaarouf, Abdelhaq. "Caractérisatiοn par Micrοscοpe à Fοrce Atοmique (AFΜ) des prοpriétés électriques et mécaniques à l'échelle nanοscοpique des cοmpοsants de puissances SiC : nanο SiC". Electronic Thesis or Diss., Normandie, 2024. http://www.theses.fr/2024NORMC261.

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Cette thèse a été consacrée à la caractérisation du carbure de silicium (SiC) pour les applications en électronique de puissance. Les études ont porté sur la caractérisation structurale et électrique locale du polymorphe 4H-SiC. Malgré les avantages du matériau 4H-SiC pour l’utilisation dans l’électronique de puissance (large bande interdite, conductivité thermique élevée, tension de claquage élevée, …), il présente certains inconvénients pour son utilisation dans les dispositifs tels que la relativement faible mobilité des électrons et la densité de pièges élevée à l'interface avec l’oxyde Si

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Alhoussein, Ali. "Caractérisation et modélisation CEM des nouvelles technologie de composants de puissance (SIC). : Application : convertisseurs de puissance." Thesis, Normandie, 2020. http://www.theses.fr/2020NORMR043.

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Avec le développement des nouveaux composants de puissance à grand gap plus performants que leurs homologues en Silicium et l’intégration croissante de ces composants dans le véhicule électrique, la compatibilité électromagnétique est devenue un enjeu important pour le respect des normes de conformité en vigueur. La thèse traite donc les méthodes de modélisation haute fréquence des composants grand gap. Les problèmes liés à la fiabilité et la précision des modèles actuels sont mis en évidence. Ensuite, un nouveau modèle générique est proposé avec des formulations spécifiques lui permettant de

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Douzi, Chawki. "Effet du vieillissement par fatigue électrothermique sur la compatibilité électromagnétique des composants de puissance à base de SiC." Thesis, Normandie, 2019. http://www.theses.fr/2019NORMR002/document.

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Ce travail de recherche porte sur l’étude de l’effet du vieillissement par fatigue électrothermique sur la compatibilité électromagnétique des composants de puissance à base de carbure de silicium. Il est axé sur deux grandes parties ; une partie expérimentale et une autre plus orientée modélisation. Sur le plan expérimental, cette thèse étudie l’effet du vieillissement des transistors à base de carbure de silicium utilisés dans les convertisseurs statiques sur les perturbations électromagnétiques générées par ces convertisseurs. La deuxième partie porte sur la modélisation de ces transistors

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Ahmed, Ahmed Sabry Eltaher. "High-performance cooling of power semiconductor devices embedded in a printed circuit board." Electronic Thesis or Diss., Lyon, INSA, 2024. http://www.theses.fr/2024ISAL0100.

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L'intégration de dispositifs semi-conducteurs de puissance dans un circuit imprimé (PCB) est une solution prometteuse pour réduire les éléments parasites des circuits, simplifier le packaging des dispositifs et réduire les coûts. Cependant, la réduction continue de la taille des puces semi-conductrices, combinée à la faible conductivité thermique des couches diélectriques des PCB nécessitent des solutions de gestion thermique plus efficaces. Les solutions de gestion thermique et de refroidissement doivent offrir une faible résistance thermique entre la jonction de la puce et son environnement,

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Sadik, Diane-Perle. "On Reliability of SiC Power Devices in Power Electronics." Doctoral thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207763.

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Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1.7kV voltage range, power devices in SiC are foreseen to replace Si Insulatedgatebipolar transistors (IGBTs) for applications targeting high efficiency,high operation temperatures and/or volume reductions. In particular, theSiC Metal-oxide semiconductor field-effect transistor (MOSFET) – which isvoltage contro

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Hasanuzzaman, Md. "MOSFET modeling, simulation and parameter extraction in 4H- 6H- silicon carbide." 2005. http://etd.utk.edu/2005/HasanuzzamanMd.pdf.

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Thesis (Ph. D.) -- University of Tennessee, Knoxville, 2005.<br>Title from title page screen (viewed on June 28, 2005). Thesis advisor: Syed Kamrul Islam. Document formatted into pages (xi, 121 p. : ill. (some col.)). Vita. Includes bibliographical references (p. 110-116).

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(9115403), Rahul Padavagodu ramamurthy. "VERTICAL TRIGATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR IN 4H - SILICON CARBIDE." Thesis, 2020.

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<p>Advances in modern technology and recent demand for high power applications have motivated great interest in power electronics. Power semiconductor devices are key components that have enabled significant advances in power electronic systems. Historically, silicon has been the material of choice for power semiconductor devices such as diodes, transistors and thyristors. However, silicon devices are now reaching their fundamental limits, and a transition to wide bandgap semiconductors is critical to make further progress in the field. Among them, SiC (silicon carbide) has attracted increasi

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Niemeier, Dennis. "Device Simulation and Analytical Modeling of Weak Harmonic Distortion in Bulk Silicon Radio Frequency MOSFET Switches." 2020. https://tud.qucosa.de/id/qucosa%3A74396.

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Diese Dissertation behandelt schwache Nichtlinearitäten in Radiofrequenzschaltern, die auf Grundlage von CMOS-Transistoren realisiert werden. Der besondere Schwerpunkt liegt auf der analytischen Modellierung sowie der Simulation der Nichtlinearität mithilfe einer TCAD (Technology Computer-Aided Design) Software. Die Nichtlinearität kann nach den verschiedenen Quellen klassifiziert werden: der Transistornichtlinearität und der Substratnichtlinearität. Für beide Bereiche werden umfassende Simulationen und analytische Modellierungen sowie Messungen präsentiert und interpretiert.<br>This disserta

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Wolmarans, Johan Jacob. "'n Ondersoek na die eienskappe en skakelgedrag van silikonkarbiedvlakveldeffektransistors vir hoedrywingstoepassings." Thesis, 2008. http://hdl.handle.net/10210/826.

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The current temperature operating range of semiconducting materials is given to be between -10°C and 105°C. Current plans are to increase this range due to an industry demand for semiconducting materials able to operate outside these bounds. Wide bandgap semiconductor materials have been researched for some time in an effort to manufacture commercially viable controlled semiconductor switches. Samples of such a controlled switch have been obtained and promises to be close to commercial rollout. This controlled switch takes on the form of a Junction Field Effect Transistor (JFET), which is a de

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Huque, Mohammad Aminul. "A High-Temperature, High-Voltage SOI Gate Driver Integrated Circuit with High Drive Current for Silicon Carbide Power Switches." 2010. http://trace.tennessee.edu/utk_graddiss/706.

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High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) an

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Roy, Shamibrota. "Characterization and Modelling of Switching Dynamics of SiC MOSFETs." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5929.

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Silicon Carbide MOSFETs (SiC MOSFETs) fall into the class of wide band gap (WBG) power devices. These devices are commercially available in the voltage range of 600-3300V and superior over the state of the art Si insulated gate bipolar junction transistors (IGBTs) due to their better electrical and thermal performances. In power electronic converters, semiconductor devices operate as switches. They can be turned on or off using a control signal. Unlike ideal switches, practical devices require a finite amount of time to transit between on and off states. This is termed as switching transient.

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Maria, Pedro Alexandre Pereira. "Estudo de um conversor CC/CC usando tecnologia SICMOSFET." Master's thesis, 2019. http://hdl.handle.net/10400.26/36384.

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No atual contexto de elevado desenvolvimento tecnológico, os conversores eletrónicos de potência desempenham um papel fundamental. De facto, estes encontram numa enorme gama de equipamentos, tais como, nos sistemas de geração transporte e distribuição de energia elétrica, Sistemas de tração, Sistemas de comunicação, eletrodomésticos e iluminação. Estes Sistemas são de tal modo importantes que neste momento, nos países industrializados são utilizados em mais de 50% de todos os equipamentos. Deste modo, e num contexto em que a energia é um bem cada vez mais escasso do ponto de vista

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