Log in

Relevant bibliographies by topics / Silicon Controlled Rectifier (SCR) / Journal articles

To see the other types of publications on this topic, follow the link: Silicon Controlled Rectifier (SCR).

Journal articles on the topic 'Silicon Controlled Rectifier (SCR)'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 January 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Silicon Controlled Rectifier (SCR).'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Stoliar, P., I. Akita, O. Schneegans, M. Hioki, and M. J. Rozenberg. "A spiking neuron implemented in VLSI." Journal of Physics Communications 6, no. 2 (2022): 021001. http://dx.doi.org/10.1088/2399-6528/ac4e2a.

Full text

Abstract:

Abstract A VLSI implementation of a Silicon-Controlled Rectifier (SCR)-based Neuron that has the functionality of the leaky-integrate and fire model (LIF) of spiking neurons is introduced. The silicon-controlled rectifier is not straightforward to efficiently migrate to VLSI. Therefore, we propose a MOS transistor-based circuit that provides the same functionality as the SCR. The results of this work are based on Spice simulation using open libraries and on VLSI layout and post layout simulations for a 65 nm CMOS process.

APA, Harvard, Vancouver, ISO, and other styles

2

Prasetia, Vicky, and Roy Aries Permana T. "ANALISA PENGGUNAAN SILICON CONTROLLED RECTIFIER PADA ELEKTROPLATING TEMBAGA/BAJA KARBON RENDAH." Infotekmesin 10, no. 1 (2019): 6–11. http://dx.doi.org/10.35970/infotekmesin.v10i1.19.

Full text

Abstract:

Electroplating is one of the engineering improvements in the characteristics of metal materials. Copper coating is a pre-coating before further coating for steel. The surface area of the material is in line with the strong current requirements required for the normal coating process. However, too much current flowing into the cathode results in erosion at the anode. Silicon Controlled Rectifier (SCR) is a component made of semiconductor silicon. It has a function as a controller or switch. Silicon Controlled Rectifiers can be used to reduce coating currents in copper electroplating. The settin

APA, Harvard, Vancouver, ISO, and other styles

3

Jiang, Yibo, Hui Bi, and Hui Li. "Low trigger voltage bulk FinFET silicon controlled rectifier in nanotechnology." Modern Physics Letters B 32, no. 34n36 (2018): 1840072. http://dx.doi.org/10.1142/s0217984918400729.

Full text

Abstract:

The bulk fin field-effect transistor (FinFET) has been the primary semiconductor technology in nanotechnology. To protect low supply voltage circuits based on FinFET, trigger voltage [Formula: see text] of the silicon controlled rectifier (SCR) which acts as electrostatic discharge (ESD) protection device should be lowered further. In this paper, in order to lower the [Formula: see text] an extra implant technique is proposed to form bridging well low trigger voltage FinFET SCR (FinFET BRLVTSCR). The experiments demonstrate that the trigger voltage can be lowered effectively. Moreover, the TCA

APA, Harvard, Vancouver, ISO, and other styles

4

Hou, Du, Yang, Liu, and Liu. "Area-Efficient Embedded Resistor-Triggered SCR with High ESD Robustness." Electronics 8, no. 4 (2019): 445. http://dx.doi.org/10.3390/electronics8040445.

Full text

Abstract:

The trigger voltage of the direct-connected silicon-controlled rectifier (DCSCR) was effectively reduced for electrostatic discharge (ESD) protection. However, a deep NWELL (DNW) is required to isolate PWELL from P-type substrate (PSUB) in DCSCR, which wastes part of the layout area. An area-efficient embedded resistor-triggered silicon-controlled rectifier (ERTSCR) is proposed in this paper. As verified in a 0.3-μm CMOS process, the proposed ERTSCR exhibits lower triggering voltage due to series diode chains and embedded deep n-well resistor in the trigger path. Additionally, the proposed ERT

APA, Harvard, Vancouver, ISO, and other styles

5

Zhu, Xinyu, Shurong Dong, Fangjun Yu, et al. "Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection." Nanomaterials 12, no. 10 (2022): 1743. http://dx.doi.org/10.3390/nano12101743.

Full text

Abstract:

A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process electrostatic discharge (ESD) protection applications is proposed. The transmission line pulse (TLP) results show that the proposed device has a low turn-on voltage of 1.77 V. Compared with conventional SCR and diode string, the proposed SCR-D has an additional conduction path constituting by two additional inherent diodes, which results in a 1.8-to-2.2-times current surge capability as compared with the simple diode string and conventional SCR with the same size. The results show that the proposed device me

APA, Harvard, Vancouver, ISO, and other styles

6

Du, Feibo, Fei Hou, Wenqiang Song, et al. "An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application." IEEE Transactions on Electron Devices 67, no. 2 (2020): 576–81. http://dx.doi.org/10.1109/ted.2019.2961124.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Tian, Zhuo, та Bai Cheng Li. "Conduction Uniformity Improvement of ESD Protection Device in 0.35 μm Partially-Depleted SOI Salicided CMOS Technology". Applied Mechanics and Materials 687-691 (листопад 2014): 3251–54. http://dx.doi.org/10.4028/www.scientific.net/amm.687-691.3251.

Full text

Abstract:

ComparedtobulkCMOStechnology,Silicon-on-Insulator (SOI) CMOS technology has many advantages, such as low power consumption, low leakage current, low parasitic capacitance and a low soft error rate from both alpha particles and cosmic rays. However,electrostatic discharge (ESD) protection in SOI technology is still a major substantial barrier to overcome for the poor thermal conductivity of isolation oxide and the absence of vertical diode and silicon controlled rectifier (SCR).

APA, Harvard, Vancouver, ISO, and other styles

8

Liu, Zhiwei, Juin J. Liou, and Jim Vinson. "Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications." IEEE Electron Device Letters 29, no. 7 (2008): 753–55. http://dx.doi.org/10.1109/led.2008.923711.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Song, Wenqiang, Feibo Du, Fei Hou, and Zhiwei Liu. "A modified low voltage triggered silicon controlled rectifier (SCR) for ESD applications." Semiconductor Science and Technology 35, no. 5 (2020): 055015. http://dx.doi.org/10.1088/1361-6641/ab78f8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Chen, Ruibo, Hao Wei, Hongxia Liu, Zhiwei Liu, and Yaolin Chen. "Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit." Nanomaterials 12, no. 23 (2022): 4250. http://dx.doi.org/10.3390/nano12234250.

Full text

Abstract:

In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can realize ~2 V lower trigger voltage. Meanwhile, the trigger voltage of the ULVTSCR is adjustable with the number of its incorporated NMOS transistors. Compared with the existing Diodes-chain Triggered SCR (DTSCR) scheme, the NMOSs-chain triggered ULVTSCR possesses a 25% lowered overshoot voltage in th

APA, Harvard, Vancouver, ISO, and other styles

11

Lou, Lifang, Juin J. Liou, Shurong Dong, and Yan Han. "Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models." Solid-State Electronics 53, no. 2 (2009): 195–203. http://dx.doi.org/10.1016/j.sse.2008.11.007.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Salcedo, J. A., J. J. Liou, and J. C. Bernier. "Novel and Robust Silicon-Controlled Rectifier (SCR) Based Devices for On-Chip ESD Protection." IEEE Electron Device Letters 25, no. 9 (2004): 658–60. http://dx.doi.org/10.1109/led.2004.834736.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Du, Feibo, Zhiwei Liu, Jizhi Liu, Jun Wang, and Juin J. Liou. "A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications." IEEE Transactions on Device and Materials Reliability 19, no. 1 (2019): 169–75. http://dx.doi.org/10.1109/tdmr.2019.2895208.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Lou, Lifang, and Juin J. Liou. "An Improved Compact Model of Silicon-Controlled Rectifier (SCR) for Electrostatic Discharge (ESD) Applications." IEEE Transactions on Electron Devices 55, no. 12 (2008): 3517–24. http://dx.doi.org/10.1109/ted.2008.2006739.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Zhang, Peng, Yuan Wang, Xing Zhang, XiaoHua Ma, and Yue Hao. "Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp." Science China Information Sciences 57, no. 2 (2013): 1–6. http://dx.doi.org/10.1007/s11432-013-5016-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Chen, Shen Li, та Chun Ju Lin. "Evaluation of ESD/LU Reliabilities by Different SCR Layout Types in a 0.35μm 3.3V CMOS Process". Advanced Materials Research 779-780 (вересень 2013): 1124–29. http://dx.doi.org/10.4028/www.scientific.net/amr.779-780.1124.

Full text

Abstract:

This paper aimed at the evaluation of layout dependence on ESD/LU reliabilities in the 0.35μm 3.3V low-voltage triggered silicon-controlled-rectifier (LVTSCR) DUTs. In this work, the parameter of channel L in a pMOS and the parameter S of an SCR are varied to study the influence on trigger voltage (Vt1), holding voltage (Vh) and secondary breakdown current (It2), respectively. Eventually, it can be found that the layout illustration of type-2 has a higher It2than that of type-1, i.e., the ratio of (It2)type-2/(It2)type-1> 3 among all the LVTpSCRs. Meanwhile, the holding voltage of all SCR d

APA, Harvard, Vancouver, ISO, and other styles

17

Li, Mingzhu, Xiaowu Cai, Chuanbin Zeng, et al. "The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology." Electronics 11, no. 4 (2022): 546. http://dx.doi.org/10.3390/electronics11040546.

Full text

Abstract:

In this work, the electrostatic discharge (ESD) characteristics of a pMOS-triggered bidirectional silicon-controlled rectifier (PTBSCR) that was fabricated in a 0.18 μm silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, is investigated. The multi-snapback phenomenon was observed under the transmission line pulsing (TLP) test system. It was found that gate voltage and inserting shallow trench isolation (STI) can significantly affect the trigger voltage and holding voltage. The underlying physical mechanism related to the multi-snapback phenomenon and the effects of gate voltage on the

APA, Harvard, Vancouver, ISO, and other styles

18

Zhou, Guo Shun, Tu Ya, Shen Hua, and Shu Kun Zhao. "A Design of SCR Three-Phase AC-Voltage Regulator Simplify Circuitry Based on STM32 MCU." Applied Mechanics and Materials 433-435 (October 2013): 1271–75. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.1271.

Full text

Abstract:

This paper introduces a novel design of three-phase AC-voltage regulation trigger circuitry using silicon controlled rectifier (SCR), and presents its application in an energy-saving design of oil extractor control system. The design employs photoelectric isolation technique and the inter-phase of three-phase power supply itself, only three groups of triggering signals are required to control the six thyristors conducting angles. The generation of high-precision triggering signals and PID control regulator functions are realized by programming the multiple high-performance timers and the AD in

APA, Harvard, Vancouver, ISO, and other styles

19

Chen, Shen-Li, and Yi-Cih Wu. "Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers." Sensors 18, no. 10 (2018): 3340. http://dx.doi.org/10.3390/s18103340.

Full text

Abstract:

High-voltage n-channel lateral-diffused metal-oxide-semiconductor field-effect transistor (nLDMOS) components, fabricated by a TSMC 0.25-m 60-V bipolar-CMOS-DMOS (BCD) process with drain-side embedded silicon-controlled rectifier (SCR) of the n-p-n-arranged and p-n-p-arranged types, were investigated, in order to determine the devices’ electrostatic discharge (ESD)-sensing behavior and capability by discrete anode engineering. As for the drain-side n-p-n-arranged type with discrete-anode manners, transmission–line–pulse (TLP) testing results showed that the ESD ability (It2 value) was slightly

APA, Harvard, Vancouver, ISO, and other styles

20

WALL, RICHARD W., and HERBERT L. HESS. "DESIGN AND MICROCONTROLLER IMPLEMENTATION OF A THREE PHASE SCR POWER CONVERTER." Journal of Circuits, Systems and Computers 06, no. 06 (1996): 619–33. http://dx.doi.org/10.1142/s0218126696000431.

Full text

Abstract:

A single processor controls a three phase silicon controlled rectifier (SCR) power converter. An inexpensive, dual optoisolator interface to the power line provides noise rejection and an improved measure of the zero crossing. A dynamic digital phase-locked loop (PLL) algorithm implemented in an Intel 87C196KD-20 processor achieves frequency tracking, dynamically changing characteristics for improved performance. Dynamically modifying the PLL characteristics permits independent capture and locked dynamics. A feedforward method provides command tracking for improved response without loss of per

APA, Harvard, Vancouver, ISO, and other styles

21

Zhou, Zijie, Xiangliang Jin, Yang Wang, Peng Dong, Yan Peng, and Jun Luo. "Analysis of Non-Uniform Current Distribution in Multi-Fingered and Low-Voltage-Triggered LVTSCR." Elektronika ir Elektrotechnika 27, no. 1 (2021): 41–47. http://dx.doi.org/10.5755/j02.eie.25352.

Full text

Abstract:

Laterally Diffused Metal Oxide Semiconductor Silicon-Controlled Rectifier (LDMOS-SCR) is usually used in Electrostatic Discharge (ESD) protection. LDMOS-SCR discharges current by parasitic SCR, but the MOS in it cannot work when parasitic SCR is stabilized. To further enhance the Electrostatic Discharge (ESD) discharging capability of LDMOS-SCR, a novel high failure current LDMOS-SCR with 12 V operation voltage is fabricated and verified in a 0.18-um high-voltage Bipolar-CMOS-DMOS (BCD) process. Compared with conventional LDMOS-SCR, the novel LDMOS-SCR (LDMOS-SCR-R) introduced a heavily doped

APA, Harvard, Vancouver, ISO, and other styles

22

Faranda, Roberto, Hossein Hafezi, Kishore Akkala, and Massimo Lazzaroni. "AC “Back to Back” Switching Device in Industrial Application." Energies 13, no. 14 (2020): 3539. http://dx.doi.org/10.3390/en13143539.

Full text

Abstract:

In industrial applications, among several varieties of semiconductor devices available, a silicon-controlled rectifier (SCR) is often used in managing and protecting various systems with different applications. Hence, it is of the utmost importance to design a control system which can operate over a range of electrical loads without any modifications in its hardware and/or software. This paper analyzes and investigates in detail the power circuit effects on conduction delay and SCR functioning. Moreover, two different commonly used driving systems for SCR application have been introduced, disc

APA, Harvard, Vancouver, ISO, and other styles

23

Shah, Minsha, Hitesh Mandaliya, Lavkesh Lachhvani, Manu Bajpai, and Rachana Rajpal. "Microcontroller Based High Voltage, High Speed Trigger Control Circuit for SMARTEX-C." WSEAS TRANSACTIONS ON ELECTRONICS 12 (September 13, 2021): 100–105. http://dx.doi.org/10.37394/232017.2021.12.14.

Full text

Abstract:

Microcontroller based trigger control circuit for fast pulsing of electrode potentials on wide range of time scales has been designed, installed, and tested for electron plasma experiments which are carried out in partial toroidal trap SMall Aspect Ratio Toroidal Electron plasma EXperiment in C – shaped geometry (SMARTEX – C), a device to create and confine non-neutral plasma (electron plasma). The sequence of trap operation is inject-hold-dump for which electrodes need to be pulsed with applied voltages at a high switching speed of few nanoseconds. Also this sequence of operation needs to be

APA, Harvard, Vancouver, ISO, and other styles

24

Shi, Changli, Tongzhen Wei, Yushu Sun, Dongqiang Jia, and Tianchu Li. "Seamless Switching Control Technology for the Grid-Connected Converter in Micro-Grids." Electronics 9, no. 12 (2020): 2109. http://dx.doi.org/10.3390/electronics9122109.

Full text

Abstract:

In order to ensure the reliable power supply of the local load in the micro-grid (MG), a seamless switching control technology (SSCT) suitable for grid-connected converter (GCC) is proposed. This technology includes silicon-controlled rectifiers (SCR) forced shutdown control strategy (SCR-FSCS) and three-loop control strategy (TLCS). The SCR-SSCT adjusts the load voltage in real time to form a back voltage at the grid-connected inductor, which greatly reduces the SCR shutdown time and ensures the reliability of local load power supply. The TLCS can easily realize the switching between the curr

APA, Harvard, Vancouver, ISO, and other styles

25

Cheng, Guoxiao, Zhiqun Li, Pengfei Yue, Lei Luo, Xiaodong He, and Boyong He. "A 6.5-kV HBM ESD-protected high-gain LNA using cascaded L-match input network." Modern Physics Letters B 33, no. 23 (2019): 1950280. http://dx.doi.org/10.1142/s0217984919502804.

Full text

Abstract:

A wideband (2–3 GHz) three-stage low noise amplifier (LNA) with electrostatic discharge (ESD) protection circuits using 0.18 [Formula: see text]m CMOS technology is presented in this paper. Low-parasitic silicon-controlled rectifier (SCR) devices are co-designed with the LNA in the form of [Formula: see text]-parameters, and a new cascaded L-match input network is proposed to reduce the parasitic effects of them on the input matching. To improve linearity performance, an optimized multiple-gated transistors method (MGTR) is proposed and applied to the third stage, which takes both transconduct

APA, Harvard, Vancouver, ISO, and other styles

26

Han, Hong Biao, and Yu Peng Guo. "Study on Electrospark Depositing & Welding Power Supply." Advanced Materials Research 314-316 (August 2011): 165–70. http://dx.doi.org/10.4028/www.scientific.net/amr.314-316.165.

Full text

Abstract:

The requirements of the power supply design are proposed based on the principle of discharge process in depositing & welding power supply, and a depositing & welding power system schematic is designed according to the requirements. The control manner of the power supply combines RLC (Resistance-Inductance-Capacitance) circuit with fast SCR, and the deposition and restoration can be achieved by using the NE555 circuit to trigger the fast silicon controlled rectifier. Furthermore, parameters such as voltage, capacitance, frequency, motion mode of electrode are probed into, a depositing &

APA, Harvard, Vancouver, ISO, and other styles

27

Ker, Ming-Dou, and Kuo-Chun Hsu. "Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection." Japanese Journal of Applied Physics 42, Part 2, No. 11B (2003): L1366—L1368. http://dx.doi.org/10.1143/jjap.42.l1366.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Lee, Jian-Hsing, Yi-Hsun Wu, Shao-Chang Huang, Yu-Huei Lee, and Ke-Horng Chen. "Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) input and output protections in nanometer technologies." Solid-State Electronics 74 (August 2012): 134–41. http://dx.doi.org/10.1016/j.sse.2012.04.024.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Irwanto, Riandi. "Analisa Harmonisa Pada Transformator 3 Fasa." JURNAL PERSEGI BULAT 1, no. 1 (2022): 7–12. http://dx.doi.org/10.36490/jurnalpersegibulat.v1i1.248.

Full text

Abstract:

Gangguan harmonisa yang terjadi pada sistem distribusi tenaga listrik akibat terjadinya distorsi gelombang arus dan tegangan. Distorsi gelombang arus dan tegangan ini disebabkan adanya pembentukan gelombang-gelombang dengan frekuensi kelipatan bulat dari frekuensi fundamentalnya. Gelombang-gelombang ini kemudian menumpang pada gelombang aslinya sehingga terbentuk gelombang cacat yang merupakan jumlah antara gelombang murni sesaat dengan gelombang harmonik. Keberadaan beban non-linier yang terdapat pada jaringan di Gedung A sebagai sebagian penyumbang harmonisa yang terjadi diantaranya electron

APA, Harvard, Vancouver, ISO, and other styles

30

Suryadi, Aris. "STUDI HARMONISA ARUS DAN TEGANGAN LISTRIK PADA KAMPUS POLITEKNIK ENJINERING INDORAMA." SINERGI 20, no. 3 (2016): 213. http://dx.doi.org/10.22441/sinergi.2016.3.007.

Full text

Abstract:

Gangguan harmonisa yang terjadi pada sistem distribusi tenaga listrik akibat terjadinya distorsi gelombang arus dan tegangan. Distorsi gelombang arus dan tegangan ini disebabkan adanya pembentukan gelombang-gelombang dengan frekuensi kelipatan bulat dari frekuensi fundamentalnya. Gelombang-gelombang ini kemudian menumpang pada gelombang aslinya sehingga terbentuk gelombang cacat yang merupakan jumlah antara gelombang murni sesaat dengan gelombang harmonik. Keberadaan beban non-linier yang terdapat pada Kampus Politeknik Enjinering Indorama sebagai sebagian penyumbang harmonisa yang terjadi dia

APA, Harvard, Vancouver, ISO, and other styles

31

Zhang, Yue, Qi Dong Li, Tai Li Sun, and Xi Chuan Zhang. "Design and Testing of the Copper Pipe and Aluminum Pipe Welding Control System." Applied Mechanics and Materials 33 (October 2010): 84–87. http://dx.doi.org/10.4028/www.scientific.net/amm.33.84.

Full text

Abstract:

The copper - aluminum pipe has been widely used in the refrigeration industry. And the welding quality becomes the focus. A PLC control system was developed to accurately control the resistance welding process of the Cu-Al pipe. The welding voltage was adjusted by a couple of silicon controlled rectifiers (SCR). To restrain the effect of network voltage fluctuation on the welding heat generation, it was obtained that the experimental relationship of the angle of flow and the network voltage, and fitted to a quadratic polynomial equation. Therefore, the control system can calculate the exactly

APA, Harvard, Vancouver, ISO, and other styles

32

Fan, Sheng-Kai, Shen-Li Chen, Po-Lin Lin, and Hung-Wei Chen. "Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs." Electronics 9, no. 5 (2020): 718. http://dx.doi.org/10.3390/electronics9050718.

Full text

Abstract:

An electrostatic discharge (ESD) event can negatively affect the reliability of integrated circuits. Therefore, improving on ESD immunity in high-voltage (HV) n-channel (n) lateral diffused metal–oxide–semiconductor field-effect transistor (HV nLDMOS) components through drain-side layout engineering was studied. This involved adjusting the operating voltage, improving the non-uniform turned-on phenomenon, and examining the effects of embedded-device structures on ESD. All proposed architectures for improving ESD immunity in this work were measured and evaluated using a transmission-line pulse

APA, Harvard, Vancouver, ISO, and other styles

33

Bubenheim, David L., Raman Sargis, and David Wilson. "SPECTRAL CHANGES IN METAL HALIDE AND HIGH PRESSURE SODIUM LAMPS EQUIPPED WITH ELECTRONIC DIMMING." HortScience 26, no. 6 (1991): 738A—738. http://dx.doi.org/10.21273/hortsci.26.6.738a.

Full text

Abstract:

Electronic dimming of high intensity discharge lamps offers control of photosynthetic photon flux (PPF) but is often characterized as causing significant spectral changes. Growth chambers with 400 W metal halide (MH) and high pressure sodium (HPS) lamps were equipped with a dimmer system using silicon controlled rectifiers (SCR) as high speed switches. Phase control operation turned the line power off for some period of the AC cycle. At full power the electrical input to HPS and MH lamps was 480 W (RMS) and could be decreased to 267 W and 428 W, respectively, before the arc was extinguished. C

APA, Harvard, Vancouver, ISO, and other styles

34

Bubenheim, David L., Raman Sargis, and David Wilson. "Spectral Changes in Metal Halide and High-pressure Sodium Lamps Equipped with Electronic Dimming." HortScience 30, no. 5 (1995): 1086–89. http://dx.doi.org/10.21273/hortsci.30.5.1086.

Full text

Abstract:

Electronic dimming of high-intensity discharge lamps offers control of photosynthetic photon flux (PPF) but is often characterized as causing significant spectral changes. Growth chambers with 400-W metal halide (MH) and high-pressure sodium (HPS) lamps were equipped with a dimmer system using silicon-controlled rectifiers (SCR) as high-speed switches. Phase control operation turned the line power off for some period of the alternating current cycle. At full power, the electrical input to HPS and MH lamps was 480 W (root mean squared) and could be decreased to 267 W and 428 W, respectively, be

APA, Harvard, Vancouver, ISO, and other styles

35

Karunasiri, Gamani. "Spontaneous pulse generation using silicon controlled rectifier." Applied Physics Letters 89, no. 2 (2006): 023501. http://dx.doi.org/10.1063/1.2220528.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Andriyanov, A. M. "Silicon controlled rectifier for controlling “Bentec” slurry pumps." Automation, Telemechanization and Communication in Oil Industry, no. 11 (2020): 9–16. http://dx.doi.org/10.33285/0132-2222-2020-11(568)-9-16.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Khairudin, M., N. Parwantiningsih, E. Panji, and R. Prayoga. "Water level control system using silicon controlled rectifier." Journal of Physics: Conference Series 1456 (January 2020): 012013. http://dx.doi.org/10.1088/1742-6596/1456/1/012013.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Neacsu, A., E. I. Cole, and R. H. Propst. "Chaotic feedback schemes of the silicon controlled rectifier." Physica D: Nonlinear Phenomena 34, no. 3 (1989): 449–55. http://dx.doi.org/10.1016/0167-2789(89)90268-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Dong, Shurong, Jian Wu, Meng Miao, Jie Zeng, Yan Han, and Juin J. Liou. "High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications." IEEE Electron Device Letters 33, no. 10 (2012): 1345–47. http://dx.doi.org/10.1109/led.2012.2208934.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Du, Feibo, Fei Hou, Zhiwei Liu, Jizhi Liu, and Juin J. Liou. "Bidirectional silicon‐controlled rectifier for advanced ESD protection applications." Electronics Letters 55, no. 2 (2019): 112–14. http://dx.doi.org/10.1049/el.2018.6686.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Yusran and A. D. Armanda. "Design and testing of 1 phase semi-controlled rectifier circuit (experiment scale): a part of green laboratory project." IOP Conference Series: Earth and Environmental Science 926, no. 1 (2021): 012045. http://dx.doi.org/10.1088/1755-1315/926/1/012045.

Full text

Abstract:

Abstract This paper discussed design and testing of one (1) phase semi-controlled full wave rectifier circuit (experiment scale) as a part of green laboratory project. The research method was divided by two stages: design and testing. The design stage included: component selection and calculation, conceptual design and circuit physical implementation. The three main components included 2 diodes, 2 thyristors (SCR), resistive (R) and inductive (L) load with varying values. The testing stage was physical rectifier circuit operation with R (220; 580; 1,500 ohm) and R-L (L=2.37 H) load. The voltag

APA, Harvard, Vancouver, ISO, and other styles

42

Lu, Ya Ping, Tian Lin Song, and Hai Qing Liu. "Influence of Silicon Controlled Rectifier Voltage Regulation Device under DDC-Temperature Control." Advanced Materials Research 706-708 (June 2013): 826–29. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.826.

Full text

Abstract:

In the boiler heating control device of combining DDC and the silicon controlled rectifier voltage regulation device, there are phase shift trigger, pulse width modulation (PWM) and cycle wave cross zero trigger (CYC). Under the different silicon controlled rectifier voltage regulation devices, there are different influences for DDC. It makes the best of the cycle characteristics of the alternating current (AC) for the cycle wave cross zero trigger (CYC). For DDC - temperature control system, there are advantages of high control accuracy, less interference and power source pollution.

APA, Harvard, Vancouver, ISO, and other styles

43

Hung, Chung‐Yu, Tzu‐Cheng Kao, Jian‐Hsing Lee, et al. "Simple scheme to increase hold voltage for silicon‐controlled rectifier." Electronics Letters 50, no. 3 (2014): 200–202. http://dx.doi.org/10.1049/el.2013.1853.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Zhiwei Liu, Juin J. Liou, Shurong Dong, and Yan Han. "Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications." IEEE Electron Device Letters 31, no. 8 (2010): 845–47. http://dx.doi.org/10.1109/led.2010.2050575.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Holonyak, N. "The silicon p-n-p-n switch and controlled rectifier (thyristor)." IEEE Transactions on Power Electronics 16, no. 1 (2001): 8–16. http://dx.doi.org/10.1109/63.903984.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Zhong, Zeyu, Yang Wang, Xiangliang Jin, Yan Peng, Jun Luo, and Jun Yang. "Analysis of current aggregation in gate-control dual direction silicon controlled rectifier." IEICE Electronics Express 18, no. 13 (2021): 20210214. http://dx.doi.org/10.1587/elex.18.20210214.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Bindra, Ashok. "IEEE Declares General Electric's Silicon-Controlled Rectifier/Thyristor Invention a Milestone [Flyback]." IEEE Power Electronics Magazine 6, no. 3 (2019): 48–51. http://dx.doi.org/10.1109/mpel.2019.2926607.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Du, Feibo, Fei Hou, Wenqiang Song, et al. "Vertical bipolar junction transistor triggered silicon‐controlled rectifier for nanoscale ESD engineering." Electronics Letters 56, no. 7 (2020): 350–51. http://dx.doi.org/10.1049/el.2019.3864.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Li, Xiang, Shurong Dong, Zhihui Yu, Jie Zeng, and Weihuai Wang. "Transient voltage suppressor based on diode-triggered low-voltage silicon controlled rectifier." Facta universitatis - series: Electronics and Energetics 29, no. 4 (2016): 647–51. http://dx.doi.org/10.2298/fuee1604647l.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Li, Rui. "Design of the Pulse Triggered by Three-Phrase Controlled Rectifier Circuit." Applied Mechanics and Materials 325-326 (June 2013): 944–47. http://dx.doi.org/10.4028/www.scientific.net/amm.325-326.944.

Full text

Abstract:

Have designed the software and hardware formation of the six-pulse triggering device which is based on the all-controlled bridge type of Three-phase circuit of the single-chip microcomputer PIC16F877A . This new controllable silicon triggering system can show the triggering angle specifically and work steadily.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!