Relevant bibliographies by topics / Silicon Electric properties

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon Electric properties'

Author: Grafiati
Published: 4 June 2021
Last updated: 30 January 2023

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Journal articles on the topic "Silicon Electric properties"

1

Summueang, C., T. Fudulwatjananon, and S. Boonchui. "High-harmonic generation (HHG) in silicene." IOP Conference Series: Materials Science and Engineering 1234, no. 1 (2022): 012033. http://dx.doi.org/10.1088/1757-899x/1234/1/012033.

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Abstract Silicene, a freshly isolated silicon allotrope with a two-dimensional (2D) honeycomb lattice structure, is expected to have electrical properties comparable to graphene. Considering the certain external electric applying on silicene, we explore high-harmonic generation (HHG) effect and its factors. According to our investigation, the external electric field significantly influences the optical emission peaks of the low-frequency optical emission.
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Zainabidinov, S., O. O. Mamatkarimov, O. Khimmatkulov, and I. G. Tursunov. "Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon." Ukrainian Journal of Physics 62, no. 11 (2017): 957–60. http://dx.doi.org/10.15407/ujpe62.11.0957.

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Wu, Zhensheng, Haitao Yang, Fuqiang Tian, Hao Ren, and Yu Chen. "Effective Tuning of the Performance of Conductive Silicon Compound by Few-Layered Graphene Additives." Nanomaterials 12, no. 6 (2022): 907. http://dx.doi.org/10.3390/nano12060907.

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Electric conductive silicon compounds are widely used and essential in electric power, energy and information industries. However, there are still problems such as insufficient stability of physical and chemical properties and weak electrical conductivity. To address the problem of low contact reliability of electrical joints in high-power transmission and distribution equipment, we assessed the influence of mechanically exfoliated graphene (MEG) content on the physicochemical properties of electrical joint compound (EJC). Varying amounts of few-layer MEG prepared with the conventional mechani
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Li, Zhiye, Yuechao Ma, Anrui Hu, Lubin Zeng, Shibo Xu, and Ruilin Pei. "Investigation and Application of Magnetic Properties of Ultra-Thin Grain-Oriented Silicon Steel Sheets under Multi-Physical Field Coupling." Materials 15, no. 23 (2022): 8522. http://dx.doi.org/10.3390/ma15238522.

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Nowadays, energy shortages and environmental pollution have received a lot of attention, which makes the electrification of transportation systems an inevitable trend. As the core part of an electrical driving system, the electrical machine faces the extreme challenge of keeping high power density and high efficiency output under complex workin g conditions. The development and research of new soft magnetic materials has an important impact to solve the current bottleneck problems of electrical machines. In this paper, the variation trend of magnetic properties of ultra-thin grain-oriented sil
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Liu, Manwen, Tao Zhou, and Zheng Li. "Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector." Micromachines 11, no. 7 (2020): 674. http://dx.doi.org/10.3390/mi11070674.

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In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell with p-type bulk silicon, such as electric potential distribution, electric field distribution, hole concentration distribution, and leakage current to analyze the full detector depletion voltage and other detector properties. To verify the prediction of ultra-fast response times, we sim
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Guo, Juyi, Xilin Wang, Zhidong Jia, Jun Wang, and Chuan Chen. "Nonlinear Electrical Properties and Field Dependency of BST and Nano-ZnO-Doped Silicone Rubber Composites." Molecules 23, no. 12 (2018): 3153. http://dx.doi.org/10.3390/molecules23123153.

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Recently, composite materials with nonlinear dielectric or resistive properties performed well in electric field homogenization and space charge suppression in a high voltage transmission and distribution system. For the purpose of obtaining insulation materials with desirable dielectric and electrical resistance properties, we investigated several fillers with nonlinear electrical properties doped in silicon rubber composites, and their dependency on the temperature and field. The samples of silicone rubber composites with different components were prepared using barium strontium titanate (BS
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Li, Zhan Kai, Jing Qin Wang, Fu Min Zhang, et al. "Research of Electric Properties of Monocrystalline Silicon Solar Battery." Advanced Materials Research 427 (January 2012): 128–32. http://dx.doi.org/10.4028/www.scientific.net/amr.427.128.

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With crystalline silicon solar battery industry is developing rapidly, there are scientific significance and application value for guiding the industrial production using analysis of the electrical properties of crystalline silicon solar battery. This paper studies that the main parameters of monocrystalline crystal silicon solar battery: the junction depth and superficial concentrations influence on electrical characteristics of monocrystalline silicon solar battery. The result shows that for maximum efficiency, it is bound to get the largest possible open circuit voltage, short circuit curre
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Peng, Gang, Wen Bo Ma, Xiao Kun Huang, et al. "Electrical Transport Properties of Single SiC NW-FET." Advanced Materials Research 704 (June 2013): 281–86. http://dx.doi.org/10.4028/www.scientific.net/amr.704.281.

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A single SiC NW-FET (nanowire field effect transistor) was fabricated by FIB (Focus-Ion-Beam) method and the photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied in this paper. SiC NWs (NWs) were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The NWs were suspended in ethanol by ultrasonic, then sprayed onto a silicon wafer with 300nm silicon oxide. Pt electrodes were deposited directly by FEI NanoLab 600i along with the SiC NW on silicon wafer. The transfer characteristi
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K??oka, J., A. Fejfar, and I. Pelant. "Electric and Photoelectric Properties of High Porosity Silicon." physica status solidi (b) 190, no. 1 (1995): 27–33. http://dx.doi.org/10.1002/pssb.2221900105.

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Choyke, W. J., and G. Pensl. "Physical Properties of SiC." MRS Bulletin 22, no. 3 (1997): 25–29. http://dx.doi.org/10.1557/s0883769400032723.

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While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he
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Dissertations / Theses on the topic "Silicon Electric properties"

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Gerleman, Ian Gregory. "Thermo-electric properties of two-dimensional silicon based heterostructures." Thesis, University of Warwick, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343787.

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Singh, Santosh Kumar. "Silicon carbide based inverter for hybrid electric vehicles." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610181.

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洪國光 and Kwok-kwong Hung. "Electrical characterization of Si-SiO2 interface for thin oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1987. http://hub.hku.hk/bib/B31230866.

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Blood, Arabella M. "A study of the electrical properties of defects in silicon." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298320.

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Magubane, Siphesihle Siphamandla. "Metal assisted chemically etched silicon nanowires for application in a hybrid solar cell." University of the Western Cape, 2018. http://hdl.handle.net/11394/6733.

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>Magister Scientiae - MSc<br>Photovoltaic (PV) devices based on inorganic-organic hybrid active layers have been extensively studied for over a decade now. However, photoactive hybrid layers of material combinations such as rr-P3HT and SiNWs still require further exploration as candidates for solar cell (SC) fabrication, due to favourable optical absorption and charge carrier mobility associated with them respectively. The ultimate goal of the study is to fabricate ITO/PEDOT:PSS/rr-P3HT:SiNWs/Al SCs with different SiNWs content and investigate the different parameters or factors influenc
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Rodichkina, Sofia. "Electrical and thermal properties of silicon nanowire arrays." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI129.

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Les nanofils de silicium (SiNWs) attirent l’attention particulière en raison de leurs applications thermoélectriques prometteuses. La faible conductivité thermique et les propriétés électriques proches du Si massif en font un nanomatériau thermoélectrique idéal dans le concept de "verre à phonons - cristal à électrons". Théoriquement, les valeurs du facteur de mérite thermoélectrique (ZT) pour SiNW peuvent atteindre 3 à la température ambiante. ZT = 0,7 a été déjà obtenu expérimentalement pour des SiNW individuels, ce qui est proche de ZT pour les chalcogénures de bismuth (ZT = 0,8 -1,0) qui s
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Hashimura, Akinori. "Single-crystal silicon HARPSS capacitive beam resonators." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/15798.

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Shrestha, Kiran (Engineer). "Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc700106/.

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The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and th
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Krygowski, Thomas Wendell. "A novel simultaneous diffusion technology for low-cost, high-efficiency silicon solar cells." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/22973.

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Ullah, Syed Shihab. "Solution Processing Electronics Using Si6 H12 Inks: Poly-Si TFTs and Co-Si MOS Capacitors." Thesis, North Dakota State University, 2011. https://hdl.handle.net/10365/28902.

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The development of new materials and processes for electronic devices has been driven by the integrated circuit (IC) industry since the dawn of the computer era. After several decades of '"Moore's Law"-type innovation, future miniaturization may be slowed down by materials and processing limitations. By way of comparison, the nascent field of flexible electronics is not driven by the smallest possible circuit dimension, but instead by cost and form-factor where features typical of 1970s CMOS (i.e., channel length - IO ?m) will enable flexible electronic technologies such as RFID, e-paper, phot
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Books on the topic "Silicon Electric properties"

1

Hann, Geoff. Amorphous silicon solar cells. Minerals and Energy Research Institute of Western Australia, 1997.

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Silicon carbide power devices. World Scientific, 2005.

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3

Ehrstein, James R. The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1999.

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Ehrstein, James R. The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.

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5

1954-, Nalwa Hari Singh, ed. Silicon-based materials and devices. Academic Press, 2001.

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Gerleman, Ian Gregory. Thermo-electric properties of two-dimensional silicon based heterostructures. typescript, 1998.

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Porous silicon multilayers: Synthesis and applications. Nova Science Publishers, 2011.

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Mukherjee, Moumita. Silicon carbide: Materials, processing and applications in electronic devices. InTech, 2011.

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The electrochemistry of silicon: Instrumentation, science, materials and applications. Wiley-VCH, 2002.

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10

Polycrystalline silicon for integrated circuit applications. Kluwer Academic Publishers, 1988.

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Book chapters on the topic "Silicon Electric properties"

1

Dvurechenskii, A. V., and A. I. Yakimov. "Optical Properties Of Arrays Of Ge/Si Quantum Dots In Electric Field." In Towards the First Silicon Laser. Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_26.

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VASHPANOV, YURI A., and IGOR P. KONUP. "INFLUENCE OF ADSORPTION OF VIRUSES OF PLANTS ON ELECTRIC PROPERTIES OF POROUS SILICON." In Combined and Hybrid Adsorbents. Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-5172-7_31.

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Kamins, Ted. "Electrical Properties." In Polycrystalline Silicon for Integrated Circuit Applications. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1681-7_5.

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Kamins, Ted. "Electrical Properties." In Polycrystalline Silicon for Integrated Circuits and Displays. Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5577-3_5.

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Rebohle, Lars, and Wolfgang Skorupa. "Electrical Properties." In Rare-Earth Implanted MOS Devices for Silicon Photonics. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14447-9_3.

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Bulutay, Ceyhun, and Stefano Ossicini. "Electronic and Optical Properties of Silicon Nanocrystals." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch2.

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Hsueh, Hung-Chung, Guang-Yu Guo, and Steven G. Louie. "Electronic and Optical Properties of Silicon Carbide Nanostructures." In Silicon-based Nanomaterials. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_7.

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Matsumoto, Nobuo, Hiroyuki Suzuki, and Hajime Miyazaki. "Electronic and Optical Properties in Device Applications of Polysilanes." In Silicon-Containing Polymers. Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-3939-7_19.

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Zhang, Rui-Qin. "Novel Electronic Properties of Silicon Nanostructures." In SpringerBriefs in Molecular Science. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-40905-9_4.

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Lindefelt, U., and H. Iwata. "Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes." In Silicon Carbide. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_4.

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Conference papers on the topic "Silicon Electric properties"

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Colli, A. "Synthesis of Silicon Nanowires." In ELECTRIC PROPERTIES OF SYNTHETIC NANOSTRUCTURES: XVII International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2004. http://dx.doi.org/10.1063/1.1812126.

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Albrecht, P. M. "Atomically Clean Integration of Carbon Nanotubes with Silicon." In ELECTRIC PROPERTIES OF SYNTHETIC NANOSTRUCTURES: XVII International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2004. http://dx.doi.org/10.1063/1.1812067.

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Beclemishev, V. I., V. M. Maslovsky, Alexander I. Belogorokhov, et al. "Effect of electric arc plasma jet treatment on porous silicon properties." In ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, edited by Alexander M. Prokhorov and Vladimir I. Pustovoy. SPIE, 1996. http://dx.doi.org/10.1117/12.232224.

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He, Bo, ZhongQuan Ma, Jing Xu, et al. "Fabrication and opto-electric properties of silicon based heterojunction SIS cells." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411303.

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Hsieh, M. C., T. Y. Chiang, H. A. Dai, et al. "Electric properties of SONOS memories with embedded silicon nanocrystals in nitride." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.p-9-12.

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Sato, Shin-ichiro, and Takeshi Ohshima. "Ion irradiation effects on electric properties of hydrogenated amorphous silicon thin films." In SPIE Defense, Security, and Sensing, edited by Thomas George, M. Saif Islam, and Achyut K. Dutta. SPIE, 2013. http://dx.doi.org/10.1117/12.2015110.

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Suzuki, Ken, and Hideo Miura. "Improvement of Mechanical Reliability of 3D Electronic Packaging by Controlling the Mechanical Properties of Electroplated Materials." In ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-65539.

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Three-dimensional (3D) integration of silicon microelectronic devices improves the electronic functions of devices and minimizes packaging density drastically. A through-silicon via (TSV) structure is indispensable for maximizing the density of interconnections among the stacked silicon chips. However, since the TSV structure is surrounded by silicon, and there is large mismatch in materials properties between metallic materials used for the TSV structure and silicon, thermal stress is essentially generated around the TSV structure during their fabrication process and operating conditions. Rec
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Haneji, T., K. Miyagi, M. Goya, T. Sueyoshi, Z. Nakao, and M. Ushio. "Evaluation of Mechanical Properties of the Composite Joints With Metal Powder and Electric Current Flow." In ASME 2001 Engineering Technology Conference on Energy. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/etce2001-17141.

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Abstract The solid-state welding method was applied under atmospheric conditions by using metal powder medium which was interposed in the space between the two solid bars of specimen (i.e., base metal), and was compressed longitudinally and simultaneously current was conducted to generate Joule thermal heat. Some fundamental data on the mechanical and metallurgical properties of the joint were obtained by using resistance welding. In the experiments, the specimen materials used as base metals in this study were pure aluminum, stainless steel and titanium bars of solid, and the powder media wer
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Lundberg, Robert, Mona P. Moret, and Luc Garguet-Duport. "HIPed Silicon Nitride Components for AGATA — Properties and Evaluation." In ASME 1998 International Gas Turbine and Aeroengine Congress and Exhibition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/98-gt-566.

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The European EUREKA project, EU 209, otherwise known as AGATA (Advanced Gas Turbine for Automobiles), is a programme dedicated to the development of three critical ceramic components — a catalytic combustor, a radial turbine wheel and a static heat exchanger — for a 60 kW turbogenerator in an hybrid electric vehicle. These three components, which are of critical importance to the achievement of low emissions and high efficiency, have been designed, developed, manufactured and tested as part of a full scale feasibility study. AGATA is a joint project conducted by eight commercial companies and
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Pop, Eric. "Electron-Phonon Interaction and Joule Heating in Nanostructures." In ASME 2008 3rd Energy Nanotechnology International Conference collocated with the Heat Transfer, Fluids Engineering, and Energy Sustainability Conferences. ASMEDC, 2008. http://dx.doi.org/10.1115/enic2008-53050.

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The electron-phonon energy dissipation bottleneck is examined in silicon and carbon nanoscale devices. Monte Carlo simulations of Joule heating are used to investigate the spectrum of phonon emission in bulk and strained silicon. The generated phonon distributions are highly non-uniform in energy and momentum, although they can be approximately grouped into one third acoustic (AC) and two thirds optical phonons (OP) at high electric fields. The phonon dissipation is markedly different in strained silicon at low electric fields, where certain relaxation mechanisms are blocked by scattering sele
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Reports on the topic "Silicon Electric properties"

1

Myers, S. M., D. M. Follstaedt, G. A. Petersen, C. H. Seager, H. J. Stein, and W. R. Wampler. Chemical and electrical properties of cavities in silicon and germanium. Office of Scientific and Technical Information (OSTI), 1994. http://dx.doi.org/10.2172/28206.

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Seager, C. H., S. M. Myers, D. M. Follstaedt, H. J. Stein, and W. R. Wampler. The structural, chemical, and electrical properties of He-implantation-induced nanocavities in silicon. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10194006.

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Street, R. A. Research on the Structural and Electronic Properties of Defects in Amorphous Silicon, Final Subcontract Report, September 1989 - December 1990. Office of Scientific and Technical Information (OSTI), 1991. http://dx.doi.org/10.2172/5862140.

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Street, R. A. Research on the structural and electronic properties of defects in amorphous silicon. Final subcontract report, September 1989--December 1990. Office of Scientific and Technical Information (OSTI), 1991. http://dx.doi.org/10.2172/10122365.

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Street, R. Research on electronic and structural properties of amorphous-silicon-based alloy materials. Annual subcontract report, July 1984-June 1985. Office of Scientific and Technical Information (OSTI), 1985. http://dx.doi.org/10.2172/6406706.

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Cohen, J. D. Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/860393.

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Cohen, J. D. Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Mid-Gap and Low-Gap Cells: Final Subcontract Report, 16 January 1998-15 October 2001. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/15000750.

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Cohen, J. D. Identifying electronic properties relevant to improving the performance and stability of amorphous silicon-based mid-gap and low-gap cells: Annual subcontract report, 16 January 1998--15 January 1999. Office of Scientific and Technical Information (OSTI), 2000. http://dx.doi.org/10.2172/754638.

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