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Books on the topic 'Silicon Electric properties'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 January 2023

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1

Hann, Geoff. Amorphous silicon solar cells. Minerals and Energy Research Institute of Western Australia, 1997.

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2

Silicon carbide power devices. World Scientific, 2005.

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3

Ehrstein, James R. The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1999.

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4

Ehrstein, James R. The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.

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5

1954-, Nalwa Hari Singh, ed. Silicon-based materials and devices. Academic Press, 2001.

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6

Gerleman, Ian Gregory. Thermo-electric properties of two-dimensional silicon based heterostructures. typescript, 1998.

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7

Porous silicon multilayers: Synthesis and applications. Nova Science Publishers, 2011.

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8

Mukherjee, Moumita. Silicon carbide: Materials, processing and applications in electronic devices. InTech, 2011.

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9

The electrochemistry of silicon: Instrumentation, science, materials and applications. Wiley-VCH, 2002.

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10

Polycrystalline silicon for integrated circuit applications. Kluwer Academic Publishers, 1988.

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11

Ferroelectric dielectrics integrated on silicon. ISTE Ltd., 2011.

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12

Single-electron devices and circuits in silicon. Imperial College Press, 2010.

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13

1957-, Meda L., ed. Physical chemistry of, in, and on silicon. Springer-Verlag, 1989.

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14

Polycrystalline silicon for integrated circuits and displays. 2nd ed. Kluwer Academic Publishers, 1998.

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15

European Conference on Silicon Carbide and Related Materials (6th 2006 Newcastle upon Tyne, England). Silicon carbide and related materials 2006: Proceedings of the 6th European conference on silicon carbide and related materials, Newcastle upon Tyne, UK, September 2006. Trans Tech Publications, 2007.

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16

Japan) International Conference on Silicon Carbide and Related Materials (12th 2007 Ōtsu-shi. Silicon carbide and related materials 2007: Selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. Trans Tech Publications, 2009.

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17

International Conference on Silicon Carbide and Related Materials (2005 Pittsburgh, Pa.). Silicon carbide and related materials - 2005: Proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. Edited by Devaty Robert Philip 1954-, Larkin David J, and Saddow Stephen E. Trans Tech Publications, 2006.

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18

Chuan, Feng Zhe, ed. SiC power materials: Devices and applications. Springer, 2004.

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19

Spain) European Conference on Silicon Carbide and Related Materials (7th 2008 Barcelona. Silicon carbide and related materials 2008: Selected, peer reviewed papers from the 7th European conference on silicon carbide and related materials, September 7-11, Barcelona, Spain. Trans Tech Publications, 2009.

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20

Abramov, I. I. Modelirovanie fizicheskikh prot︠s︡essov v ėlementakh kremnievykh integralʹnykh mikroskhem. BGU, 1999.

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21

Jakubowicz, Jarosław. Mechanizm zarodkowania porów i zmian mikrostruktury krzemu w procesach mokrego trawienia. Wydawn. Politechniki Poznańskiej, 2006.

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22

Dylla, Thorsten. Electron spin resonance and transient photocurrent measurements on microcrystalline silicon. Forschungszentrum, Zentralbibliothek, 2005.

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23

service), ScienceDirect (Online, ed. Handbook of silicon based MEMS: Materials & technologies. William Andrew, 2010.

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24

Nobuyoshi, Koshida, and SpringerLink (Online service), eds. Device Applications of Silicon Nanocrystals and Nanostructures. Springer US, 2009.

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25

Merdzhanova, Tsvetelina. Microcrystalline silicon films and solar cells investigated by photoluminescence spectroscopy. Forschungszentrum Jülich, 2005.

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26

Simon, Tsuo Y., ed. Hydrogenated amorphous silicon alloy deposition processes. M. Dekker, 1993.

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27

Cristoloveanu, Sorin. Electrical characterization of silicon-on-insulator materials and devices. Kluwer Academic, 1995.

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28

Electrochemistry of silicon and its oxide. Kluwer Academic/Plenum Publishers, 2001.

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29

Y, Wong C., Thompson C. V, Tu K. N. 1937-, and Symposium on Polysilicon Films and Interfaces (1987 : Boston, Mass.), eds. Polysilicon films and interfaces: Symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A. Materials Research Society, 1988.

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30

J, Bauer Anton, ed. Silicon carbide and related materials 2009: Selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. Trans Tech Publications, 2010.

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31

Seabaugh, Alan Carter. EPROP, an interactive FORTRAN program for computing selected electronic properties of gallium arsenide and silicon. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1990.

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32

mm-Wave silicon technology: 60GHz and beyond. Springer Science+Business Media, 2008.

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33

International, Conference Renewable Energy (2010 Yokohama-shi Japan). Enerugī gijutsu kenkyū ni okeru kokusai kenkyū kyōryoku no yakuwari: Sansōken Sesshon : Saisei Kanō Enerugī Kokusai Kaigi 2010. Sangyō Gijutsu Sōgō Kenkyūjo, 2010.

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34

IEEE SOS/SOI Technology Conference. (1989 Stateline, Nev.). 1989 IEEE SOS/SOI Technology Conference, October 3-5, 1989, High Sierra Hotel, Stateline, Nevada: Proceedings. IEEE, 1989.

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35

Levinshteĭn, M. E. (Mikhail Efimovich), ed. SiC materials and devices. World Scientific, 2007.

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36

Lifshit︠s︡, V. G. Spektry KhPĖĖ poverkhnostnykh faz na kremnii. Dalʹnauka, 2004.

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37

Ehrstein, James R. Preparation and certification of SRM's for calibration of spreading resistance probes. U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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38

Ehrstein, James R. Preparation and certification of SRM's for calibration of spreading resistance probes. National Bureau of Standards, 1985.

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39

Ehrstein, James R. Preparation and certification of SRM's for calibration of spreading resistance probes. U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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40

1952-, Chattopadhyay Swapan, and Bera L. K, eds. Strained-Si heterostructure field effect devices. Taylor & Francis, 2007.

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41

Littlejohn, Samuel David. Electrical Properties of Graphite Nanoparticles in Silicone. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-00741-0.

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42

Ünal, Bayram. Optical, electrical and structural properties of nanostructured silicon and silicon-germanium alloys. De Montfort University, 1998.

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43

Wahab, Z. Abdul. Thermal and electrical properties of doped silicon carbide based ceramics. UMIST, 1993.

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44

Wolfgang, Skorupa, ed. Rare-earth implanted MOS devices for silicon photonics: Microstructural, electrical and optoelectronic properties. Springer, 2010.

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45

Sze, Wing-Il. Electrical characterization of silicon and silicon dioxide materials. 1988.

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46

Dewey, James Michael. Investigation of minority electron transport in silicon. 1993.

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47

Baliga, B. Jayant. Silicon Carbide Power Devices. World Scientific Pub Co Inc, 2006.

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48

1934-, Croarkin M. C., and National Institute of Standards and Technology (U.S.), eds. The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.

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49

1934-, Croarkin M. C., and National Institute of Standards and Technology (U.S.), eds. The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1999.

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50

Whitwer, Fredrick D. DLTS characterization of precipitation induced microdefects. 1986.

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