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Dissertations / Theses on the topic 'Silicon Electric properties'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 January 2023

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1

Gerleman, Ian Gregory. "Thermo-electric properties of two-dimensional silicon based heterostructures." Thesis, University of Warwick, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343787.

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2

Singh, Santosh Kumar. "Silicon carbide based inverter for hybrid electric vehicles." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610181.

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3

洪國光 and Kwok-kwong Hung. "Electrical characterization of Si-SiO2 interface for thin oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1987. http://hub.hku.hk/bib/B31230866.

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4

Blood, Arabella M. "A study of the electrical properties of defects in silicon." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298320.

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5

Magubane, Siphesihle Siphamandla. "Metal assisted chemically etched silicon nanowires for application in a hybrid solar cell." University of the Western Cape, 2018. http://hdl.handle.net/11394/6733.

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>Magister Scientiae - MSc<br>Photovoltaic (PV) devices based on inorganic-organic hybrid active layers have been extensively studied for over a decade now. However, photoactive hybrid layers of material combinations such as rr-P3HT and SiNWs still require further exploration as candidates for solar cell (SC) fabrication, due to favourable optical absorption and charge carrier mobility associated with them respectively. The ultimate goal of the study is to fabricate ITO/PEDOT:PSS/rr-P3HT:SiNWs/Al SCs with different SiNWs content and investigate the different parameters or factors influenc

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6

Rodichkina, Sofia. "Electrical and thermal properties of silicon nanowire arrays." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI129.

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Les nanofils de silicium (SiNWs) attirent l’attention particulière en raison de leurs applications thermoélectriques prometteuses. La faible conductivité thermique et les propriétés électriques proches du Si massif en font un nanomatériau thermoélectrique idéal dans le concept de "verre à phonons - cristal à électrons". Théoriquement, les valeurs du facteur de mérite thermoélectrique (ZT) pour SiNW peuvent atteindre 3 à la température ambiante. ZT = 0,7 a été déjà obtenu expérimentalement pour des SiNW individuels, ce qui est proche de ZT pour les chalcogénures de bismuth (ZT = 0,8 -1,0) qui s

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7

Hashimura, Akinori. "Single-crystal silicon HARPSS capacitive beam resonators." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/15798.

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8

Shrestha, Kiran (Engineer). "Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc700106/.

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The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and th

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9

Krygowski, Thomas Wendell. "A novel simultaneous diffusion technology for low-cost, high-efficiency silicon solar cells." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/22973.

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10

Ullah, Syed Shihab. "Solution Processing Electronics Using Si6 H12 Inks: Poly-Si TFTs and Co-Si MOS Capacitors." Thesis, North Dakota State University, 2011. https://hdl.handle.net/10365/28902.

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The development of new materials and processes for electronic devices has been driven by the integrated circuit (IC) industry since the dawn of the computer era. After several decades of '"Moore's Law"-type innovation, future miniaturization may be slowed down by materials and processing limitations. By way of comparison, the nascent field of flexible electronics is not driven by the smallest possible circuit dimension, but instead by cost and form-factor where features typical of 1970s CMOS (i.e., channel length - IO ?m) will enable flexible electronic technologies such as RFID, e-paper, phot

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11

Green, Stephen. "Effect of oxygen and hydrogen on the optical and electrical characteristics of porous silicon : towards sensor applications." Thesis, London South Bank University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299908.

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12

Haque, Amil. "Modeling of the excited modes in inverted embedded microstrip lines using the finite-difference time-domain (FDTD) technique." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26582.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Tentzeris, Emmanouil; Committee Member: Andrew Peterson; Committee Member: Laskar, Joy; Committee Member: Papapolymerou, Ioannis. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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13

Goericke, Fabian Thomas. "Simulation, fabrication and characterization of piezoresistive bio-/chemical sensing microcantilevers." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/24624.

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14

Sadeghzadeh, Mohammad Ali. "Electrical properties of Si/Siâ†1â†-â†xGeâ†x/Si inverted modulation doped structures." Thesis, University of Warwick, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343950.

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15

Soltani, Mohammad. "Novel integrated silicon nanophotonic structures using ultra-high Q resonators." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31647.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Prof. Ali Adibi; Committee Member: Prof. Joseph Perry; Committee Member: Prof. Stephen Ralph; Committee Member: Prof. Thomas Gaylord. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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16

Bertram, Brian D. "Effects of interfaces and preferred orientation on the electrical response of composites of alumina and silicon carbide whiskers." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42895.

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Ceramic-matrix composites of alumina and silicon carbide whiskers have recently found novel commercial application as electromagnetic absorbers. However, a detailed understanding of how materials issues influence the composite electrical response, which underpins this application, has been absent until now. In this project, such composites were electrically measured over a wide range of conditions and modeled in terms of various aspects of the microstructure in order to understand how they work. For this purpose, three types of composites were made by different methods from the same set of cer

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17

Park, Seung Chul. "Study of optical properties of multi-crystalline Si and of heavily dislocated single-crystalline Si." Thesis, King's College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314286.

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18

Baeraky, Thoria A. "High temperature measurements of the microwave dielectric properties of ceramics." Thesis, University of Nottingham, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.323185.

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19

Au, Frederick Chi Kan. "Electronic properties of silicon nanowires /." access full-text access abstract and table of contents, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ap-b19887759a.pdf.

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Thesis (Ph.D.)--City University of Hong Kong, 2005.<br>"Submitted to Department of Physics and Materials Science in partial fulfillment of the requirements for the degree of Doctor of Philosophy" Includes bibliographical references.

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20

Ramanachalam, M. Swaminathan. "Correlation of defects and electrical properties in Si and ZnO." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/19675.

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21

Burr, Jonathan Neil. "The electronic properties of amorphous silicon." Thesis, University of Leeds, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303438.

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22

Abass, Sara Abdelazeem Hassan. "Electronic properties of printed nanoparticulate silicon." Master's thesis, University of Cape Town, 2011. http://hdl.handle.net/11427/10027.

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Printed silicon is an award-winning technology in the development of a large area of flexible electronics. In an investigation of the fundamental properties of printed nanoparticulate silicon composites, layers were screen printed and successfully characterised to establish their electrical performance using a Hall Measurement System (HMS). To explore properties of the nanoparticulate silicon composite a magnetoconductivity tensor model was developed and applied to extract parameters governing the electrical properties of the material. All the layers showed at least two carrier types. The effe

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23

Guzman-Verri, Gian Giacomo. "Electronic Properties of Silicon-based Nanostructures." Wright State University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644.

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24

Krasovska, Inese. "Optical Properties of Silicon Nanopillar Arrays for Biosensing." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-175760.

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Biosensing is currently a growing research field which is relevant for different applications, for instance in health care. Sensitive and cheap biosensors are required, preferably as simple as possible in their working principle. In this work Si nanopillar structures have been fabricated and used to show the sensing principle by both depositing oxide layers with different thicknesses and by using the biotinstreptavidin model system. Si nanopillars were fabricated by two different surface patterning methods – colloidal lithography and nanoimprint lithography (obtained from a commercial source).

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25

Xu, Xiaodan. "Facet-dependent electronic properties of silicon nanowires." Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/10180.

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The effects of surface reconstruction and progressive hydroxylation on the electronic properties of [110] hexagonal silicon nanowires are investigated by ab initio calculations within the density functional theory. Progressive hydroxylation changes the density of states close to valence band maxima and leads to a general decrease in the band gap. The magnitude of band gap reduction is dependent on the facet where the hydroxyl group is bonded. While a high reduction in band gap (10%) is observed for hydroxylation on (111) facets, for (001) facets the reduction is more pronounced (21%) only when

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26

Burr, Tracey Alexandra 1967. "Electrical properties of silicon surfaces and interfaces." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9689.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.<br>Includes bibliographical references (p. 159-168).<br>This work addresses two scientific challenges associated with diminishing device size. First, alternative surface passivation chemistries are investigated to meet the narrowing process tolerances for high quality silicon surfaces. Second, Si-based light emitting devices are studied to address a longer-term move towards photons instead of electrons for data transfer. A concerted effort is made to engineer environmentally benign solution

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27

Park, Jihong. "Electrical properties of polycrystalline solar cell silicon." Case Western Reserve University School of Graduate Studies / OhioLINK, 1994. http://rave.ohiolink.edu/etdc/view?acc_num=case1061389017.

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28

García, Castelló Núria. "Atomistic study of structural and electronic transport properties of silicon quantum dots for optoelectronic applications." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/145640.

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Introduction It is undisputed that the silicon became the material most widely used in electronics in recent decades[1,2]. The qualities of silicon are well known, from its abundance and low cost to its ability to easily combine with oxides, so that the material has become essential in integrated electronic circuits and CMOS technology. A step further, though, is the idea of integrating electronics and photonics on the same silicon-based technology[3]. However, new strategies are needed to overcome the two principal obstacles of a possible bulk Si photonics: the indirect band gap and the band

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29

Schwarz, Claude Bernard. "Electrical and optical properties of silicide-silicon heterostructures /." [S.l.] : [s.n.], 1995. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=10994.

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30

Wagner, Thomas. "Low temperature silicon epitaxy defects and electronic properties /." [S.l. : s.n.], 2003. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10678419.

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31

UÌˆnal, Bayram. "Optical, electrical and structural properties of nanostructured silicon and silicon-germanium alloys." Thesis, De Montfort University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391480.

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32

Park, Kibog. "Electronic properties of stacking-fault induced heterostructures in silicon carbide studied with ballistic electron emission microscopy." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1149089614.

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33

Morales, Sánchez Alfredo. "Correlation between optical and electrical properties of materials containing nanoparticles." Doctoral thesis, Universitat Autònoma de Barcelona, 2008. http://hdl.handle.net/10803/3409.

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En esta tesis, capas de óxido de silicio rico en silicio [SRO, (SiOx, x<2)] con diferentes excesos de silicio fueron depositadas por medio de la técnica de depósito químico en fase vapor a baja presión (LPCVD). Un segundo conjunto de muestras de SRO implantadas con silicio (SI-SRO) adicional fueron también fabricadas. Nanopartículas de silicio (Si-nps) en estas capas fueron creadas después de someter a las muestras a un tratamiento térmico en alta temperatura (1100 y 1250º C). La composición, microestructura y propiedades ópticas de estas capas de SRO y SI-SRO fueron analizadas en función de l

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34

Bolt, M. J. B. "Electrical and switching properties of the SIPOS-silicon heterojunction." Thesis, University of Bradford, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.374897.

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35

Pounder, Neill Malcolm. "The electrical transport properties of niobium-silicon amorphous alloys." Thesis, University of Leeds, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305616.

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36

Lander, Sanna. "Polymer/silicon hybrid solar cells : Fabrication and electrical properties." Thesis, Karlstads universitet, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-46945.

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In this thesis, the process of fabricating PEDOT:PSS/c-Si hybrid solar cells has been investigated with the goal of performing a proof of concept as well as to determine the influence on solar cell performance of some processing parameters. Properties of PEDOT:PSS film formation and metal contact formation were investigated as a first step. Additionally, the surface passivation properties of PEDOT:PSS on n-Si have been studied and carrier lifetimes of 300 <img src="http://www.diva-portal.org/cgi-bin/mimetex.cgi?%5Cmu" />s were measured by quasi steady-state photoconductance and photoluminescen

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37

Mitromara, Niki. "Electronic properties of defects in silicon and related materials." Thesis, Sheffield Hallam University, 2008. http://shura.shu.ac.uk/20068/.

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Efforts in the current semiconductor industry are focused on the production of smaller, more efficient and inexpensive devices of higher packing density. As silicon is the dominant semiconductor implemented for the fabrication of the majority of semiconductor devices, perpetual research has focused on the improvement of its properties and the realisation of the most efficient structures. This thesis presents the electrical characterisation of two different diode structures that are important for the present and future generations of electronic devices. The first part of the thesis is focused o

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38

Naredla, Sai Bhargav. "Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes." Youngstown State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725.

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39

Silva, Sembukuttiarachilage Ravi Pradip. "Electronic, optical and structural properties of semiconducting diamond-like carbon thin films." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319523.

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40

Wagner, Thomas [Verfasser]. "Low temperature silicon epitaxy : Defects and electronic properties / Thomas Wagner." Aachen : Shaker, 2003. http://d-nb.info/1179037057/34.

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41

Rafferty, Helen Marie. "Electronic transport properties of silicon-germanium single photon avalanche detectors." Thesis, University of Leeds, 2017. http://etheses.whiterose.ac.uk/20373/.

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Single photon avalanche detectors (SPADs) have uses in a number of applications, including time-of-flight ranging, quantum key distribution and low-light sensing. Germanium has an absorption edge at the key communications wavelengths of 1.3-1.55um, and can be grown epitaxially on silicon, however, SiGe SPADs exhibit a number of performance limitations, including low detection efficiencies, high dark counts and afterpulsing. Unintentional doping may affect electronic performance, and band-to-band tunnelling at high operational voltages SPADs may lead to noise currents. Additionally, defects in

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42

Piggins, Nicholas. "A study of the optical and electronic properties of amorphous silicon nitride." Thesis, University of Leicester, 1988. http://hdl.handle.net/2381/35764.

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Amorphous a-SiNx (:H) films have been prepared by radio-frequency sputtering in an argon-nitrogen-hydrogen atmosphere. Both hydrogenated and non-hydrogenated films were studied along with films prepared by the glow-discharge decomposition of a gaseous mixture of silane and ammonia. Photoemission experiments were performed on the sputtered samples. The position and strength of the core levels were determined, along with the plasma energies as a function of x. A comprehensive study of the number and types of defects present within a-SiN(:H) was undertaken. Films sputtered at room temperature and

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43

Mian, A. R. "Some electronic properties of thin dielectric oxide films containing cerium, niobium, vanadium and silicon." Thesis, Brunel University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384096.

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44

Awan, Shamshad Akhtar. "Electrical properties of RF magnetron-sputtered insulating silicon nitride thin films." Thesis, Keele University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311646.

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Si3N4 thin films were prepared by RF magnetron sputtering using N2 or Ar as the sputtering gas. The films were amorphous, with the deposition rate for Ar-sputtered films increasing with RF power and Ar pressure. Sandwich samples having both Al and Au electrodes were prepared. Capacitancevoltage measurements indicated that the contacts for Nj-sputtcred samples were ohmic, while Ar-sputtered samples with Al electrodes exhibited depletion regions. Values of the relative permittivity of 6.3 (AI electrodes) and 6.8 (Au electrodes) were determined from geometric capacitance variations in Ny-sputrere

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45

Torrance, David Britt. "Growth and electronic properties of nanostructured epitaxial graphene on silicon carbide." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50205.

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The two-dimensional phase of carbon known as graphene is actively being pursued as a primary material in future electronic devices. The goals of this thesis are to investigate the growth and electronic properties of epitaxial graphene on SiC, with a particular focus on nanostructured graphene. The first part of this thesis examines the kinetics of graphene growth on SiC(0001) and SiC(0001 ̅) by high-temperature sublimation of the substrate using a custom-built, ultra-high vacuum induction furnace. A first-principles kinetic theory of silicon sublimation and mass-transfer is developed to descri

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46

Morrison, I. "The electronic and optical properties of silicon/germanium strained layer superlattices." Thesis, University of Newcastle Upon Tyne, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379340.

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47

Zhuo, Keenan. "Electronic, thermoelectric and vibrational properties of silicon nanowires and copper chalcogenides." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54878.

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Silicon nanowires (SiNWs) and the copper chalcogenides, namely copper sulfide (Cu2S) and selenide Cu2Se, have diverse applications in renewable energy technology. For example, SiNWs which have direct band gaps unlike bulk Si, have the potential to radically reduce the cost of Si based photovoltaic cells. However, they degrade quickly under ambient conditions. Various surface passivations have therefore been investigated for enhancing their stability but it is not yet well understood how they affect the electronic structure of SiNWs at a fundamental level. Here, we will explore, from first-prin

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48

Männl, Ulrich Philipp. "Electronic properties and microstructure of nanoparticulate silicon systems for diode applications." Doctoral thesis, University of Cape Town, 2014. http://hdl.handle.net/11427/12978.

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Includes bibliographical references.<br>In printed electronics the use of semiconducting silicon nanoparticles allows more than the simple printing of conductive materials. It gives the possibility of fabricating robust and inexpensive, active components. This work presents the design, fabrication, and characterization of Schottky barrier diodes using silicon nanoparticulate composites. Within this work it could be shown, that silicon nanoparticles produced by high energy milling can be used to replace the pigment in water-based graphic inks, which on curing have unique semiconducting properti

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49

Chen, Zengjun Williams John R. "Electrical properties of MOS devices fabricated on 4H carbon-face SiC." Auburn, Ala, 2009. http://hdl.handle.net/10415/1858.

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50

"Electronic properties of LPCVD silicon films." Chinese University of Hong Kong, 1985. http://library.cuhk.edu.hk/record=b5885569.

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by Kwong-hung Tam = 低壓化學氣相沈積硅膜之電學特性 / 譚廣雄.<br>Thesis (M.Ph.)--Chinese University of Hong Kong, 1985<br>Bibliography: leaves 102-105.<br>by Kwong-hung Tam = Di ya hua xue qi xiang chen ji gui mo zhi dian xue te xing / Tan Guangxiong.

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