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Journal articles on the topic 'Silicon Electric properties'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 January 2023

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1

Summueang, C., T. Fudulwatjananon, and S. Boonchui. "High-harmonic generation (HHG) in silicene." IOP Conference Series: Materials Science and Engineering 1234, no. 1 (2022): 012033. http://dx.doi.org/10.1088/1757-899x/1234/1/012033.

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Abstract Silicene, a freshly isolated silicon allotrope with a two-dimensional (2D) honeycomb lattice structure, is expected to have electrical properties comparable to graphene. Considering the certain external electric applying on silicene, we explore high-harmonic generation (HHG) effect and its factors. According to our investigation, the external electric field significantly influences the optical emission peaks of the low-frequency optical emission.

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2

Zainabidinov, S., O. O. Mamatkarimov, O. Khimmatkulov, and I. G. Tursunov. "Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon." Ukrainian Journal of Physics 62, no. 11 (2017): 957–60. http://dx.doi.org/10.15407/ujpe62.11.0957.

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3

Wu, Zhensheng, Haitao Yang, Fuqiang Tian, Hao Ren, and Yu Chen. "Effective Tuning of the Performance of Conductive Silicon Compound by Few-Layered Graphene Additives." Nanomaterials 12, no. 6 (2022): 907. http://dx.doi.org/10.3390/nano12060907.

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Electric conductive silicon compounds are widely used and essential in electric power, energy and information industries. However, there are still problems such as insufficient stability of physical and chemical properties and weak electrical conductivity. To address the problem of low contact reliability of electrical joints in high-power transmission and distribution equipment, we assessed the influence of mechanically exfoliated graphene (MEG) content on the physicochemical properties of electrical joint compound (EJC). Varying amounts of few-layer MEG prepared with the conventional mechani

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4

Li, Zhiye, Yuechao Ma, Anrui Hu, Lubin Zeng, Shibo Xu, and Ruilin Pei. "Investigation and Application of Magnetic Properties of Ultra-Thin Grain-Oriented Silicon Steel Sheets under Multi-Physical Field Coupling." Materials 15, no. 23 (2022): 8522. http://dx.doi.org/10.3390/ma15238522.

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Nowadays, energy shortages and environmental pollution have received a lot of attention, which makes the electrification of transportation systems an inevitable trend. As the core part of an electrical driving system, the electrical machine faces the extreme challenge of keeping high power density and high efficiency output under complex workin g conditions. The development and research of new soft magnetic materials has an important impact to solve the current bottleneck problems of electrical machines. In this paper, the variation trend of magnetic properties of ultra-thin grain-oriented sil

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5

Liu, Manwen, Tao Zhou, and Zheng Li. "Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector." Micromachines 11, no. 7 (2020): 674. http://dx.doi.org/10.3390/mi11070674.

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In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell with p-type bulk silicon, such as electric potential distribution, electric field distribution, hole concentration distribution, and leakage current to analyze the full detector depletion voltage and other detector properties. To verify the prediction of ultra-fast response times, we sim

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6

Guo, Juyi, Xilin Wang, Zhidong Jia, Jun Wang, and Chuan Chen. "Nonlinear Electrical Properties and Field Dependency of BST and Nano-ZnO-Doped Silicone Rubber Composites." Molecules 23, no. 12 (2018): 3153. http://dx.doi.org/10.3390/molecules23123153.

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Recently, composite materials with nonlinear dielectric or resistive properties performed well in electric field homogenization and space charge suppression in a high voltage transmission and distribution system. For the purpose of obtaining insulation materials with desirable dielectric and electrical resistance properties, we investigated several fillers with nonlinear electrical properties doped in silicon rubber composites, and their dependency on the temperature and field. The samples of silicone rubber composites with different components were prepared using barium strontium titanate (BS

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7

Li, Zhan Kai, Jing Qin Wang, Fu Min Zhang, et al. "Research of Electric Properties of Monocrystalline Silicon Solar Battery." Advanced Materials Research 427 (January 2012): 128–32. http://dx.doi.org/10.4028/www.scientific.net/amr.427.128.

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With crystalline silicon solar battery industry is developing rapidly, there are scientific significance and application value for guiding the industrial production using analysis of the electrical properties of crystalline silicon solar battery. This paper studies that the main parameters of monocrystalline crystal silicon solar battery: the junction depth and superficial concentrations influence on electrical characteristics of monocrystalline silicon solar battery. The result shows that for maximum efficiency, it is bound to get the largest possible open circuit voltage, short circuit curre

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8

Peng, Gang, Wen Bo Ma, Xiao Kun Huang, et al. "Electrical Transport Properties of Single SiC NW-FET." Advanced Materials Research 704 (June 2013): 281–86. http://dx.doi.org/10.4028/www.scientific.net/amr.704.281.

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A single SiC NW-FET (nanowire field effect transistor) was fabricated by FIB (Focus-Ion-Beam) method and the photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied in this paper. SiC NWs (NWs) were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The NWs were suspended in ethanol by ultrasonic, then sprayed onto a silicon wafer with 300nm silicon oxide. Pt electrodes were deposited directly by FEI NanoLab 600i along with the SiC NW on silicon wafer. The transfer characteristi

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9

K??oka, J., A. Fejfar, and I. Pelant. "Electric and Photoelectric Properties of High Porosity Silicon." physica status solidi (b) 190, no. 1 (1995): 27–33. http://dx.doi.org/10.1002/pssb.2221900105.

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10

Choyke, W. J., and G. Pensl. "Physical Properties of SiC." MRS Bulletin 22, no. 3 (1997): 25–29. http://dx.doi.org/10.1557/s0883769400032723.

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While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he

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11

Antunez, E. E., J. O. Estevez, J. Campos, M. A. Basurto, and V. Agarwal*. "Effect of magnetic field on the formation of macroporous silicon: structural and optical properties." MRS Proceedings 1617 (2013): 63–68. http://dx.doi.org/10.1557/opl.2013.1165.

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ABSTRACTThe conventional method to fabricate porous silicon with n-type substrates requires light assisted generation of holes used in the electrochemical reaction. Recently, two different methods have been proposed to fabricate some similar structures: Hall effect [1] and lateral electrical field [2]. Hall effect assisted etching involves the application of a perpendicular electric and magnetic field to achieve the concentration of holes at the HF/silicon interface to assist the electrochemical reaction, while the other involves the application of a lateral electrical field across the silicon

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12

Yu, Songke, Dong Wang, Xiaojuan Zhong, Hongkui Zhu, and Wei Chen. "A theoretical comparison of silicon and diamond in microdosimetry." Journal of Instrumentation 18, no. 01 (2023): P01032. http://dx.doi.org/10.1088/1748-0221/18/01/p01032.

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Abstract Silicon and diamond are regarded as promising solid-state detectors for microdosimetry and have attracted considerable attention in recent years. However, their performance is slightly different due to the difference in physical qualities. In this work, we intend to compare their performance in microdosimetry theoretically from the aspect of tissue equivalence and electronic properties. The tissue equivalence study has shown that diamond exhibits better tissue equivalence than silicon due to the approximation of mean ionization/excitation potential to tissue. And the tissue equivalenc

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13

Zhang, Li Peng, Xian Jin Yu, Zhi Wei Ge, Yun Hui Dong, Dang Gang Li, and Ya Li Zhang. "Research on Properties of SiC Coating Inert Anode for Aluminum Electrolysis." Materials Science Forum 686 (June 2011): 623–29. http://dx.doi.org/10.4028/www.scientific.net/msf.686.623.

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The carbon composite materials with silicon carbide coating were prepared for aluminum electrolysis as inert anode. The oxidation resistance, corrosion resistance and electrical conductivity are researched respectively. The results showed that the inert anode had high anti-oxidation, corrosion resistance and high conductivity. The oxidation kinetics curve of the material obeys typical line-logarithmic law. The corrosion occurs mainly before 25 hours. The electric conductivity was stable and good, had the electric conductivity property of the semiconductor. The conductivity increased with tempe

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14

Sun, Jiaxiong, Zheng Li, Xiaodan Li, et al. "Novel Spiral Silicon Drift Detector with Equal Cathode Ring Gap and Given Surface Electric Fields." Micromachines 13, no. 10 (2022): 1682. http://dx.doi.org/10.3390/mi13101682.

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Since the advent of semiconductor detectors, they have been developed for several generations, and their performance has been continuously improved. In this paper, we propose a new silicon drift detector structure that is different from the traditional spiral SDD structure that has a gap between the cathode ring and the width of cathode ring, increasing gradually with the increase of the radius of the cathode ring. Our new structure of spiral SDD structure has equal cathode ring gap and a given surface electric field, which has many advantages compared with the traditional structure. The novel

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15

Balázsi, Csaba, Ferenc Wéber, Péter Arató, et al. "Development of CNT-Silicon Nitrides with Improved Mechanical and Electrical Properties." Advances in Science and Technology 45 (October 2006): 1723–28. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1723.

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This work is focusing on exploring preparing processes to tailor the microstructure of carbon nanotube (CNT) reinforced silicon nitride-based ceramic composites. Samples with different porosity’s and different amount (1, 3 or 5 wt%) of carbon nanotubes have been prepared by using gas pressure sintering or hot isostatic pressing. In comparison, composites with 1wt%, 5wt% or 10wt% carbon black and graphite have been manufactured. We measured the room temperature mechanical and electrical properties, examined the micro and nano structure by X-ray diffraction and electron microscopy. It was found

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16

Sattarov, O. E., A. Mavlyanov, and A. An. "The Influence of Manganese Atoms on Magnetic Properties of Silicon." Elektronnaya Obrabotka Materialov 58, no. 4 (2022): 46–50. http://dx.doi.org/10.52577/eom.2022.58.4.46.

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The authors in the present paper suggest that it is possible to manipulate the state of manganese at-oms in the silicon lattice, thus significantly changing the state and character of the magnetic resistance of the studied silicon sample. The authors have been able to determine how magnetic resistance in silicon with a varying number of manganese atoms (single atomic or aggregates) changes as a function of temperature, light, and electric field.

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17

Banzhaf, Christian T., Michael Grieb, Achim Trautmann, Anton J. Bauer, and Lothar Frey. "Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures." Materials Science Forum 740-742 (January 2013): 691–94. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.691.

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This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011cm-2eV-1under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field

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18

Pačebutas, V., A. Krotkus, I. Šimkienė, and R. Viselga. "Electric and photoelectric properties of diode structures in porous silicon." Journal of Applied Physics 77, no. 6 (1995): 2501–7. http://dx.doi.org/10.1063/1.358779.

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19

Ambrosone, G., U. Coscia, A. Cassinese, et al. "Low temperature electric transport properties in hydrogenated microcrystalline silicon films." Thin Solid Films 515, no. 19 (2007): 7629–33. http://dx.doi.org/10.1016/j.tsf.2006.11.180.

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20

Ren, Hai Guo, and Zhi Long Zhao. "The Initial Practice on Electro-Modification Processes to Al-12Si Alloys." Advanced Materials Research 189-193 (February 2011): 814–17. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.814.

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The modification of Si-flakes from coarse acicular to fine fibrous is a common issue in Al-Si alloys casting products. The one of aims of this work is to practice the probability of applying the pulsed electric discharge (PED) to modify the morphology of Si-flakes. In the experiment, the Al-12Si alloy cast in plaster mold was treated with high voltage pulse electric discharge during the solidification. The combined effects of strong pulse electric current and chemical additives of refiner/modifier on solidification structure of eutectic silicon and tensile properties were studied. The experime

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21

Polat, Kazim Gurkan, Chen Zhou, Ahmad Umar, and M. Saif Islam. "Optimized Ultrasharp Silicon Nanowire Geometries for Enhanced Field Ionization Properties." MRS Proceedings 1785 (2015): 7–11. http://dx.doi.org/10.1557/opl.2015.514.

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ABSTRACTSilicon (Si) nanowires offer great potential for field ionization (FI) applications due to well-established Si microfabrication methods combined with favorable ionizing properties of Si. Band bending of semiconductors under applied electric fields increases the FI probability, which is not possible with metal-based counterparts. While it has been demonstrated that scaling down the active material geometry can increase the FI efficiency, maximum electric field at the tip of a single nanowire decreases by quenching effect of nearby nanowires. In this work, optimization of Si nanowire geo

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22

Budzhak, Ya S., А. A. Druzhinin, and S. I. Nichkalo. "Theoretical Analysis of Experimental Thermoelectric Characteristics of Silicon-Based Whiskers." Фізика і хімія твердого тіла 20, no. 4 (2019): 331–37. http://dx.doi.org/10.15330/pcss.20.4.331-337.

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It is shown that when a conductive crystal with electric field strength and a temperature gradient is placed in a magnetic field with an induction vector , processes of charge and heat carriers transport occur, and they can be described by known generalized electrical conduction and heat conduction equations. The tensors and scalar coefficients that make up these equations are the kinetic properties of crystals. They describe the nature of actual properties of crystals and have a wide pragmatic application in modern solid-state electronics. The process of spatial quantization of the spectrum a

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23

Ruffell, S., J. E. Bradby, J. S. Williams, and O. L. Warren. "An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon." Journal of Materials Research 22, no. 3 (2007): 578–86. http://dx.doi.org/10.1557/jmr.2007.0100.

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An in situ electrical measurement technique for the investigation of nanoindentation using a Hysitron Triboindenter is described, together with details of experiments to address some technical issues associated with the technique. Pressure-induced phase transformations in silicon during indentation are of particular interest but are not fully understood. The current in situ electrical characterization method makes use of differences in electrical properties of the phase-transformed silicon to better understand the sequence of transformations that occur during loading and unloading. Here, elect

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24

Gooding, Richard. "Elemental Efficiency." Electric and Hybrid Vehicle Technology International 2022, no. 1 (2022): 62–68. http://dx.doi.org/10.12968/s1467-5560(23)60053-3.

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Steadily replacing silicon in the drive motors, inverters, and power electronics of electric vehicles, silicon carbide offers increased operating temperatures and enhanced efficiency. What other properties of this new wonder material are raising its profile and popularity?

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25

Konstantinova, Elizaveta A., Alexander S. Vorontsov, and Pavel A. Forsh. "Investigation of Photoelectron Properties of Polymer Films with Silicon Nanoparticles." Surfaces 2, no. 2 (2019): 387–94. http://dx.doi.org/10.3390/surfaces2020028.

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Hybrid samples consisting of polymer poly-3(hexylthiophene) (P3HT) and silicon nanoparticles were prepared. It was found that the obtained samples were polymer matrixes with conglomerates of silicon nanoparticles of different sizes (10–104 nm). It was found that, under illumination, the process of nonequilibrium charge carrier separation between the silicon nanoparticles and P3HT with subsequent localization of the hole in the polymer can be successfully detected using electron paramagnetic resonance (EPR) spectroscopy. It was established that the main type of paramagnetic centers in P3HT/sili

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26

Nishimura, Toshiyuki, and Naoto Hirosaki. "Fabrication of Nitride Ceramics by Electric Current Assisted Sintering." Key Engineering Materials 616 (June 2014): 19–22. http://dx.doi.org/10.4028/www.scientific.net/kem.616.19.

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Electric current assisted sintering (ECAS) has been used for sintering of nitride ceramic powders. It was mainly used for fabrication of fine-grained silicon nitride ceramics with high plasticity at high-temperatures, because high heating rate of ECAS was effective for densification without grain growth. Recent trend of silicon nitride ceramics sintered by ECAS are for wear resistance, corrosion resistance, or high toughness. Application of silicon nitride ceramics is expanding and the ECAS is helpful for improving the properties. The ECAS is used for sintering of aluminum nitride ceramics, re

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27

Lin, Yen-Hung, and Tei-Chen Chen. "Nanoscale Mechanical and Mechanically-Induced Electrical Properties of Silicon Nanowires." Crystals 9, no. 5 (2019): 240. http://dx.doi.org/10.3390/cryst9050240.

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Molecular dynamics (MD) simulation was employed to examine the deformation and phase transformation of mono-crystalline Si nanowire (SiNW) subjected to tensile stress. The techniques of coordination number (CN) and centro-symmetry parameter (CSP) were used to monitor and elucidate the detailed mechanisms of the phase transformation throughout the loading process in which the evolution of structural phase change and the dislocation pattern were identified. Therefore, the relationship between phase transformation and dislocation pattern was established and illustrated. In addition, the electrica

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28

Du, Yi, Jincheng Zhuang, Jiaou Wang, et al. "Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation." Science Advances 2, no. 7 (2016): e1600067. http://dx.doi.org/10.1126/sciadv.1600067.

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Silicene is a monolayer allotrope of silicon atoms arranged in a honeycomb structure with massless Dirac fermion characteristics similar to graphene. It merits development of silicon-based multifunctional nanoelectronic and spintronic devices operated at room temperature because of strong spin-orbit coupling. Nevertheless, until now, silicene could only be epitaxially grown on conductive substrates. The strong silicene-substrate interaction may depress its superior electronic properties. We report a quasi-freestanding silicene layer that has been successfully obtained through oxidization of bi

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29

HOU, Q. R., Y. B. CHEN, and Y. J. HE. "MECHANICAL AND THERMOELECTRIC PROPERTIES OF HIGHER MANGANESE SILICIDE FILMS." Modern Physics Letters B 20, no. 15 (2006): 877–86. http://dx.doi.org/10.1142/s0217984906010767.

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Higher manganese silicide (HMS, MnSi 1.7) films have been deposited on glass, silicon and thermally oxidized silicon substrates by the methods of magnetron sputtering and thermal evaporation. Mechanical and thermo-electric properties of the films have been measured. The hardness and elastic modulus of the films are 10.0~14.5 GPa and 156~228 GPa, respectively. The sign of the Seebeck coefficient at room temperature is positive for all samples. The resistivity at room temperature is between 0.53×10-3 and 45.6×10-3 ohm-cm. The energy band gap calculated from the resistivity data for the film depo

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30

Jiang, C. S., H. R. Moutinho, R. C. Reedy, et al. "Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells." MRS Proceedings 1426 (2012): 371–76. http://dx.doi.org/10.1557/opl.2012.1177.

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ABSTRACTWe report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of

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31

Nishioka, Kensuke, Kosei Sato, Takuya Ito, and Yasuyuki Ota. "Low Temperature Formation of Silicon Oxide Thin Film and Modification of Film Quality by Argon Excimer Light." Advanced Materials Research 894 (February 2014): 408–11. http://dx.doi.org/10.4028/www.scientific.net/amr.894.408.

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Silicon oxide thin film was formed using reaction of spin-coated dimethyl-silicone-oil and 5% ozone gas at low temperature of 300°C. Silicone oil is used for lubrication, insulation, and so on, and it is inexpensive and easy to deal with owing to its stability. FT-IR spectrum of the formed silicon oxide film was similar to that of the thermally oxidized film, and we hardly observed peaks of Si-CH3and C-H bonds originated in silicone oil. The Si-OH bonds in the film were observed. The Si-OH bond causes the degradation of the electric properties of the insulator. In order to remove the Si-OH bon

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32

Meng, Qingyun, Yixin Kang, Xiaoyu Zhai, Ziwen Yin, and Dongpeng Yan. "Nonlinear Electrical Conductivity Properties of Au Films Prepared by Sputtering." Journal of Nanomaterials 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/437082.

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Metal-based films with tunable electrical conductivity have played an important role in developing new types of electric devices for future application. In this work, a sputtering method was used to obtain Au films on silicon substrate in a hypobaric atmosphere. Scanning electron microscope (SEM) shows that the interspaces between the Au nanoparticles were highly uniform and orderly distributed, with the width of several nanometers at the surface. By measuring theI-Vcurves of the films with thickness less than 20 nm, the nonlinear behaviors of electrical resistivity became gradually obvious as

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33

Wang, L., W. Long, Q. Gao, J. Wu, X. Wu, and H. Lin. "Investigation of Electric Properties Degradation of Multi-Crystalline Silicon Solar Cells." ECS Transactions 60, no. 1 (2014): 1251–58. http://dx.doi.org/10.1149/06001.1251ecst.

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Nduwimana, Alexis, and Xiao-Qian Wang. "Tunable electronic properties of silicon nanowires under strain and electric bias." AIP Advances 4, no. 7 (2014): 077122. http://dx.doi.org/10.1063/1.4890674.

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Habazaki, H., T. Matsuo, H. Konno, et al. "Influence of silicon species on the electric properties of anodic niobia." Electrochimica Acta 48, no. 23 (2003): 3519–26. http://dx.doi.org/10.1016/s0013-4686(03)00473-0.

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36

Snitovsky, Yu P. "CHANGE OF ELECTRIC PROPERTIES OF THE BORDER OF THE «METAL-SEMICONDUCTOR» SECTION UNDER THE EFFECT OF ION IRRADIATION." Yugra State University Bulletin 14, no. 4 (2018): 7–22. http://dx.doi.org/10.17816/byusu2018047-22.

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The paper first proposes a method of targeted direct transformation of the characteristics of a silicon bipolar high-power microwave transistor due to a change in the chemical composition at the «molybdenum - silicon» interface, the electrophysical properties of «molybdenum - silicon» contacts, and the electrophysical characteristics of transistor structure regions by irradiating «molybdenum - silicon» emitters with phosphorus ions transistor. The possibilities of this method are investigated and confirmed by experiments.

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37

Zhao, Zuo Fu, Jin Gang Qi, Shan Dai, Dong Jun Zhang, Hai Ming Yang, and Jian Zhong Wang. "Effects of Different Melt Modification Techniques on the Structure and Properties of Silicon Brass." Advanced Materials Research 299-300 (July 2011): 390–94. http://dx.doi.org/10.4028/www.scientific.net/amr.299-300.390.

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The melt of nonleaded free-cutting brass is modified by the electric pulse and the effects on the solidification structure and properties of Silicon Brass are studied with different Bi contents and under different pulse parameters. The results show that the varieties of Bi contents and pulse parameters have a greater impact on grain size and microstructure uniformity of the brass. After silicon brass with 0.5% Bi is modified by electric pulse, the Bi grain size is reduced to 5μm from 30μm, and its shape is changed into being granular from worm-like or long-strip-like, distributed more evenly i

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38

Duan, Wenyan, Xiaowei Yin, Fang Ye, et al. "Synthesis and EMW absorbing properties of nano SiC modified PDC–SiOC." Journal of Materials Chemistry C 4, no. 25 (2016): 5962–69. http://dx.doi.org/10.1039/c6tc01142j.

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Nano SiC modified silicon oxycarbide (n-SiC/SiOC) ceramics had special microstructure and phase composition that can lead to electric dipole polarization and interfacial scattering which eventually resulted in the strong absorption capability of n-SiC/SiOC.

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39

Li, Haili, and Mitsuhiro Matsumoto. "Electronic transport properties of a-Si:H." AIP Advances 12, no. 3 (2022): 035309. http://dx.doi.org/10.1063/5.0079701.

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To investigate the electron transport properties of hydrogenated amorphous silicon (a-Si:H), a series of quantum simulations and electron transport analyses were performed. The target system is a nano-scale junction of a-Si:H with various hydrogen concentrations sandwiched between two metal electrodes. The density functional based tight binding simulation was conducted to obtain the electronic structure, and the non-equilibrium Green’s function method was adopted to evaluate the electron transmission coefficient and the electric current under a bias field. It is confirmed that the hydrogen ato

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40

Yuri, Projdak, Podgorniy Sergey, Tregubenko Genadii, Polyakov Georgii, and Podyash Lyubov. "Improvement of quality and improvement of technology of production of economic alloyed steels for power engineering." Theory and practice of metallurgy 1,2021, no. 1,2021(126) (2021): 18–22. http://dx.doi.org/10.34185/tpm.1.2021.03.

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Purpose. Investigate the effect of complex microalloying with nitrogen, titanium and aluminum on the structure and properties of cast steels at elevated temperatures. Methodology. Methods of optical microscopy were used for metallographic analysis of the microstructure of steels. The mechanical properties at room and elevated temperatures were determined for static tension, crease and impact bending. Results. The technology of carbonitride strengthening of silicon-manganese production steels has passed pilot testing. The results of mechanical tests indicate a favorable complex effect of nitrog

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Kim, Myeongjin, Hyun Ju, and Jooheon Kim. "Oxygen-doped porous silicon carbide spheres as electrode materials for supercapacitors." Physical Chemistry Chemical Physics 18, no. 4 (2016): 3331–38. http://dx.doi.org/10.1039/c5cp06438d.

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Oxygen-containing functional groups were introduced onto the surface of the micro- and meso-porous silicon carbide sphere (MMPSiC) in order to investigate the relationship between the electric double layer properties and pseudo-capacitive properties; the degree of oxidation of MMPSiC was also optimized.

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Daem, Andries, Peter Sergeant, Luc Dupré, Somsubhro Chaudhuri, Vitaliy Bliznuk, and Leo Kestens. "Magnetic Properties of Silicon Steel after Plastic Deformation." Materials 13, no. 19 (2020): 4361. http://dx.doi.org/10.3390/ma13194361.

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The energy efficiency of electric machines can be improved by optimizing their manufacturing process. During the manufacturing of ferromagnetic cores, silicon steel sheets are cut and stacked. This process introduces large stresses near cutting edges. The steel near cutting edges is in a plastically deformed stress state without external mechanical load. The magnetic properties of the steel in this stress state are investigated using a custom magnetomechanical measurement setup, stress strain measurements, electrical resistance measurements, and transmission electron microscopic (TEM) measurem

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Pilipenko, V. А., V. A. Saladukha, V. A. Filipenya, et al. "CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS." Devices and Methods of Measurements 8, no. 4 (2017): 344–56. http://dx.doi.org/10.21122/2220-9506-2017-8-4-24-31.

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Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophys

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Siadou, N., I. Panagiotopoulos, N. Kourkoumelis, T. Bakas, K. Brintakis, and A. Lappas. "Electric and Magnetic Properties of Sputter Deposited BiFeO3Films." Advances in Materials Science and Engineering 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/857465.

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Polycrystalline BiFeO3films have been magnetron sputter deposited at room temperature and subsequently heat-treated ex situ at temperatures between 400 and 700°C. The deposition was done in pure Ar atmosphere, as the use of oxygen-argon mixture was found to lead to nonstoichiometric films due to resputtering effects. At a target-to-substrate distanced=2′′the BiFeO3structure can be obtained in larger range process gas pressures (2–7 mTorr) but the films do not show a specific texture. Atd=6′′codeposition from BiFeO3and Bi2O3has been used. Films sputtered at low rate tend to grow with the (001)

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Song Chao, Chen Gu-Ran, Xu Jun, et al. "Properties of electric transport in crystallized silicon films under different annealing temperatures." Acta Physica Sinica 58, no. 11 (2009): 7878. http://dx.doi.org/10.7498/aps.58.7878.

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Sato, Shin-ichiro, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, and Michio Kondo. "Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 285 (August 2012): 107–11. http://dx.doi.org/10.1016/j.nimb.2012.05.010.

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Danilov, Denis, Oleg Vyvenko, Anton Loshachenko, and Nikolay Sobolev. "Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages." physica status solidi (a) 216, no. 17 (2019): 1900327. http://dx.doi.org/10.1002/pssa.201900327.

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Romanov, I. A., L. A. Vlasukova, F. F. Komarov, et al. "Photo- and electroluminescence of oxide-nitride-oxide-silicon structures for silicon-based optoelectronics." Doklady of the National Academy of Sciences of Belarus 62, no. 5 (2018): 546–54. http://dx.doi.org/10.29235/1561-8323-2018-62-5-546-554.

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Oxide-nitride-oxide-silicon (SiO2/SiN0.9/SiO2/Si) structures have been fabricated by chemical vapor deposition. The elemental composition and light emission properties of “SiO2/SiN0.9/SiO2/Si” structures have been studied using Rutherford backscattering spectroscopy (RBS), photo- and electroluminescence (Pl, El). The RBS measurements has shown the presence of an intermediate silicon oxynitride layers at the SiO2–SiN0.9 interfaces.It has been shown that the photoluminescence of the SiO2/SiN0.9/SiO2/Si structure is due to the emission of a SiN0.9 layer, and the electroluminescence is attributed

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Bonilla, Ruy S., Christian Reichel, Martin Hermle, and Peter R. Wilshaw. "Electric Field Effect Surface Passivation for Silicon Solar Cells." Solid State Phenomena 205-206 (October 2013): 346–51. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.346.

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Effective reduction of front surface carrier recombination is essential for high efficiency silicon solar cells. Dielectric films are normally used to achieve such reduction. They provide a) an efficient passivation of surface recombination and b) an effective anti-reflection layer. The conditions that produce an effective anti-reflection coating are not necessarily the same for efficient passivation, hence both functions are difficult to achieve simultaneously and expensive processing steps are normally required. This can be overcome by enhancing the passivation properties of an anti-reflecti

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Tománek, P., P. Škarvada, R. Macků, and L. Grmela. "Detection and Localization of Defects in Monocrystalline Silicon Solar Cell." Advances in Optical Technologies 2010 (May 30, 2010): 1–5. http://dx.doi.org/10.1155/2010/805325.

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Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field nondestructive characterization techniques. The results of m

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