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Relevant bibliographies by topics / Silicon foils

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Academic literature on the topic 'Silicon foils'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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Journal articles on the topic "Silicon foils"

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Hessmann, M. T., T. Kunz, M. Voigt, K. Cvecek, M. Schmidt, A. Bochmann, S. Christiansen, R. Auer, and C. J. Brabec. "Material Properties of Laser-Welded Thin Silicon Foils." International Journal of Photoenergy 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/724502.

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An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1) laser spot welding with low constant feed speed, (2) laser line welding, and (3) keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD) to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

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Zeisler, Stefan K., and Vinder Jaggi. "Carbon–silicon stripper foils." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 655, no. 1 (November 2011): 64–65. http://dx.doi.org/10.1016/j.nima.2011.06.022.

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Jokubavicius, Valdas, Michl Kaiser, Philip Hens, Peter J. Wellmann, Rickard Liljedahl, Rositza Yakimova, and Mikael Syväjärvi. "Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates." Materials Science Forum 740-742 (January 2013): 19–22. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.19.

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Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

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Reimer, L., and I. Fromm. "Electron spectroscopic diffraction at (111) silicon foils." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 382–83. http://dx.doi.org/10.1017/s0424820100153889.

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An electron diffraction pattern (EDP) consists of an overlap of patterns of all energy losses in the electron energy-loss spectrum (EELS). Electron spectroscopic diffraction (ESD) in an energy filtering electron microscope (EFEM) allows to separate the contributions of different energy losses to the unfiltered diagram observed in conventional TEM. We report about diffraction experiments with a Zeiss EM902 on (111) silicon foils which show how the EDP of single-crystal foils changes with increasing energy loss and foil thickness. An EDP normally contains the Bragg spots, diffuse streaks by electron-phonon scattering, excess and defect Kikuchi lines when the number of electrons striking the lattice planes is different from opposite sites, a system of excess (bright) Kikuchi bands with an intensity proportional to the probability ψψ⋆ of the Bloch wave field at the nuclei, and defect Ki-kuchi bands when the number of diffusely scattered electrons is equal on both sides of the lattice plane and the intensity becomes proportional to ΣIg.EDPs of thin foils show an increase of contrast of the Bragg spots and the thermal diffuse streaks when comparing an unfiltered (Fig.1a) and zero-loss filtered EDP (Fig.1b). Because the streaks are caused by elastic scattering, they can not be ob served with the plasmon loss (Fig.1c). Bragg spots are also observed at higher energy losses because all delocalized inelastic scattering processes with energy losses less a few hundred eV show intraband transitions which preserve the type of excited Bloch waves.

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Sato, Yuichi, Atomu Fujiwara, Nguyen Duc Trung, and Sora Saito. "Differences in Morphologies of GaN-Based Nanocrystals Grown on Metal-Foils and Multi-Crystalline Si Substrates." Materials Science Forum 941 (December 2018): 2109–14. http://dx.doi.org/10.4028/www.scientific.net/msf.941.2109.

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Gallium nitride (GaN)-based thin films consist of its nanocrystals are grown on some metal-foils and a multi-crystalline silicon (Si) substrates. Their morphologies are compared with each other and the differences are discussed. Pillar-shaped nanocrystals are observed in the film grown on the multi-crystalline Si substrate while such structures are not observed in the films grown on the metal-foils when they are grown at higher growth temperatures. On the other hand, the morphologies of the films grown on the metal-foils approach to pillar-like structures by reducing the growth temperature. Band-edge emission is clearly observed in a cathodoluminescence spectrum of the film grown on the metal-foil at the reduced growth temperature.

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Martini, R., Radhakrishnan H. Sivaramakrishnan, V. Depauw, K. Van Nieuwenhuysen, I. Gordon, M. Gonzalez, and J. Poortmans. "Improvement of seed layer smoothness for epitaxial growth on porous silicon." MRS Proceedings 1536 (2013): 97–102. http://dx.doi.org/10.1557/opl.2013.748.

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ABSTRACTIn the last decades many techniques have been proposed to manufacture thin (<50µm) silicon solar cells. The main issues in manufacturing thin solar cells are the unavailability of a reliable method to produce thin silicon foils with contained material losses (kerf-losses) and the difficulties in handling and processing such fragile foils. A way to solve both issues is to grow an epitaxial foil on top of a weak sintered porous silicon layer. The porous silicon layer is formed by electrochemical etching on a thick silicon substrate and then annealed to close the top surface. This surface is employed as seed layer for the epitaxial growth of a silicon layer which can be partially processed while attached on the substrate that provides mechanical support. Afterward, the foil can be bonded on glass, detached and further processed at module level. The efficiency of the final solar cell will depend on the quality of the epitaxial layer which, in turn, depends on the seed layer smoothness.Several parameters can be adjusted to change the morphology and, hence, the properties of the porous layer, both in the porous silicon formation and the succeeding thermal treatment. This work focuses on the effect of the parameters that control the porous silicon formation on the structure of the porous silicon layer after annealing and, more specifically, on the roughness of the top surface. The reported analysis shows how the roughness of the seed layer can be reduced to improve the quality of the epitaxial growth.

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Carpenter, R. W., and Peter R. T. Jang. "Very thin foil thickness measurement by energy loss microspectroscopy." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 718–19. http://dx.doi.org/10.1017/s0424820100144966.

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A simple experimental method for quantitative determination of foil thickness in very thin regions used for HREM and microanalysis under the single scattering or thin film approximations would be very useful and timely. Most current methods rely on diffraction and are applicable only to crystalline materials, with a lower thickness limit of about ξg, or are difficult to apply to very thin foils. Energy loss microspectrscopy avoids most of these difficulties. This note reports first applications of the method to wedge foils of silicon and austenitic stainless steel.

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Medenwaldt, Robin, and Manfred Hettwer. "Production of Ultra Thin Silicon Foils." Journal of X-Ray Science and Technology 5, no. 2 (1995): 202–6. http://dx.doi.org/10.3233/xst-1995-5203.

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MEDENWALDT, R., and M. HETTWER. "Production of ultra thin silicon foils." Journal of X-Ray Science and Technology 5, no. 2 (1995): 202–6. http://dx.doi.org/10.1016/s0895-3996(05)80003-5.

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Otsu, Masaaki, Hikaru Fukugawa, and Kazuki Takashima. "C-1 LASER FORMING OF GLASS AND SILICON FOILS(Session: Forming I)." Proceedings of the Asian Symposium on Materials and Processing 2006 (2006): 48. http://dx.doi.org/10.1299/jsmeasmp.2006.48.

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Dissertations / Theses on the topic "Silicon foils"

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Heßmann, Maik [Verfasser], and Christoph J. [Akademischer Betreuer] Brabec. "Laser Welding of Silicon Foils for Thin-Film Solar Cell Manufacturing / Maik Heßmann. Gutachter: Christoph J. Brabec." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2014. http://d-nb.info/1075833922/34.

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Zhao, Zhiyong. "Angular Dependence of the Stopping Processes and the Yields of Ion-induced Electron Emission from Channeled MEV Protons in <100> Silicon Foils." Thesis, University of North Texas, 1993. https://digital.library.unt.edu/ark:/67531/metadc279025/.

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Palavesam, Nagarajan [Verfasser], Karlheinz [Gutachter] Bock, and Paul [Gutachter] Svasta. "Reliability analysis of foil substrate based integration of silicon chips / Nagarajan Palavesam ; Gutachter: Karlheinz Bock, Paul Svasta." Dresden : Technische Universität Dresden, 2020. http://d-nb.info/1234269295/34.

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Dogiamis, Georgios [Verfasser], Bedrich J. [Akademischer Betreuer] Hosticka, and Roland [Akademischer Betreuer] Schmechel. "Photodiodes and Image Sensors on Mechanically Flexible Ultra-Thin Silicon Chips-in-Foil / Georgios Dogiamis. Gutachter: Roland Schmechel. Betreuer: Bedrich J. Hosticka." Duisburg, 2014. http://d-nb.info/1054598703/34.

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Kumar, Manish. "High density and high reliability thin film embedded capacitors on organic and silicon substrates." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26655.

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Thesis (M.S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Tummala Rao; Committee Member: Pulugurtha Raj; Committee Member: Wong C P. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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Zhang, Yu, and 張毓. "Investigation of the lifetime spectrum of monoenergetic positrons in silicon involving secondary electrons emission from a carbon foil as start signal, and positron annihilation spectroscopy studies of strontium titante." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/197507.

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A proposed design of the variable energy positron annihilation spectroscopy (VEPALS) system based on secondary electron (SE) emission from a thin carbon foil has been investigated practically. The SE yield and the positron transmission coefficient were investigated as a function of the positron beam energy, the annular electrode potentials, and the column lengths of the annular electrode. The positron lifetime spectra of single crystal p-type silicon(Si) sample under different annular electrode potentials were analyzed. The result gives a supposed annular electrode potential of 1.5 kV. In view of this, the positron lifetime spectra were measured under different positron beam energy by fixing the annular electrode potential. It can be seen that all the spectra have the main p-type Si bulk lifetime component of 234 ps occupying more than 60% intensities. The intensity of the 234 ps component reaches up to 84.5 ±1.3 % when the positron beam energy is 15 keV. Further, the origin of the satellite peaks in the positron lifetime spectra are also investigated. It has been shown that the satellite peaks is attributed to the overflowing positrons on the MCP detector. The single crystal strontium titanate (STO) substrates after vacuum annealing treatment have been investigated in detail by several experimental techniques. The crystallization changes induced by the vacuum annealing were investigated by X-ray diffraction(XRD). Secondary phases were occurred after annealing treatment. The measured X-ray photoelectron spectroscopy (XPS) at O1s and C1s core levels were analyzed. The additional peaks after annealing are attributed to hydroxyl species, C-OH compounds, and carbonates. The variable energy Doppler broadening spectroscopy (VEDBS) and the traditional coincidence positron annihilation lifetime spectroscopy (PALS) were used to probe defects in STO samples. For long annealing time samples, the S parameters decrease below the reference level. The S-Wplot suggests that almost the same type of vacancy defects were induced during the annealing treatment. The positron lifetime results suggest that the main defects in annealed samples are oxygen monovacancies or divacancies and Sr-O vacancy complexes. The sample with annealing time of 110h has minimum positron effective diffusion length and maximum average lifetime, which is attributed to the increase of the vacancy-type defects during the long annealing treatment.
published_or_final_version
Physics
Master
Master of Philosophy

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Mosnier, Jean-Paul. "Spectre d'émission X d'ions silicium par la méthode "faisceau-feuille"." Paris 6, 1986. http://www.theses.fr/1986PA066025.

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Analyse du spectre de rayons X émis après la traversée d'une feuille de C par un faisceau d'ions de Si de 44mev. Identification des raies satellites observées à partir de résultats théoriques par la méthode de Dirac-fock multiconfigurationnelle; mise en évidence de plusieurs configurations ayant un électron m. Par analyse des spectres à partir des valeurs calculées des rapports de branchement, confirmation d'un processus de population statistique des états excités initiaux associés à une même configuration électronique. Effet de la réponse du gaz d'électrons libres de la cible sur l'énergie de la raie de résonnance.

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Fathi, Ehsanollah. "Thin Film Solar Cells on Transparent Plastic Foils." Thesis, 2011. http://hdl.handle.net/10012/5952.

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The focus of this thesis is on the optimization and fabrication of p-i-n amorphous silicon (a-Si:H) solar cells both on glass and transparent plastic substrates. These solar cells are specifically fabricated on transparent substrates to facilitate the integration of thin film batteries with these solar cells. To comply with plastic substrates, different silicon layers are optimized at the low processing temperature of 135 C. In the first part of the optimization process, the structural, electronic, and optical properties of boron- and phosphorous-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at the substrate temperature of 135 C are elaborated. Additionally, in this part, the deposition of protocrystalline silicon (pc-Si) films on glass substrates are investigated. In the device integration and fabrication part of this thesis, the optimization process is continued by fabricating single junction devices with different hydrogen dilution ratios for the cell absorber layer. The optimum device performance is achieved with an absorber layer right at the transition from amorphous to microcrystalline silicon. To further improve the performance of the fabricated solar cells, amorphous silicon carbide buffer layers are introduced between the nc-Si p-layer and the undoped pc-Si absorber layer. Single junction p-p'-i-n solar cells are fabricated and characterized both on glass and plastic substrates. Our measurements show conversion efficiencies of 7.0% and 6.07% for the cells fabricated on glass and plastic substrates, respectively. In the last part of this research, the light trapping enhancement in amorphous silicon solar cells using Distributed Bragg Reflectors (DBRs) are experimentally demonstrated. Reflectance characteristics of DBR test structures, consisting of amorphous silicon (a-Si) / amorphous silicon nitride (SiN) film stacks are analysed and compared with those of conventional ZnO/Al back reflectors. DBR optical measurements show that the average total reflectance over the wavelength region of 600-800 nm is improved by 28% for DBR back structures. Accordingly, single junction amorphous silicon solar cells with DBR and Al back reflectors are fabricated both on glass and plastic substrates. Our results show that the short-circuit current density and consequently the conversion efficiency is enhanced by 10% for the cells fabricated on textured transparent conductive oxide substrates. In addition, these DBR back structures are designed and employed to improve the efficiency of semi-transparent solar cells. In this application, the optimized DBR structures are designed to be optically transparent for the part of the visible range and highly reflective for the red and infra-red part of the spectrum. Using these DBR structures, the efficiency of the optimum semi-transparent solar cell is enhanced by 5%.

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TSENG, CHEN-MING, and 曾振銘. "Direct Growth of Graphene on Copper Foil and Silicon Wafer." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/93kzda.

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Palavesam, Nagarajan. "Reliability analysis of foil substrate based integration of silicon chips." 2020. https://tud.qucosa.de/id/qucosa%3A73098.

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Flexible electronics has attracted significant attention in the recent past due to the booming wearables market in addition to the ever-increasing interest for faster, thinner and foldable mobile phones. Ultra-thin bare silicon ICs fabricated by thinning down standard ICs to thickness below 50 μm are flexible and therefore they can be integrated on or in polymer foils to create flexible hybrid electronic (FHE) components that could be used to replace rigid standard surface mount device (SMD) components. The fabricated FHE components referred as chip foil packages (CFPs) in this work are ideal candidates for FHE system integration owing to their ability to deliver high performance at low power consumption while being mechanically flexible. However, very limited information is available in the literature regarding the reliability of CFPs under static and dynamic bending. The lack of such vital information is a major obstacle impeding their commercialization. With the aim of addressing this issue, this thesis investigates the static and dynamic bending reliability of CFPs. In this scope, the static bending reliability of CFPs has been investigated in this thesis using flexural bending tests by measuring their fracture strength. Then, Finite Element Method (FEM) simulations have been implemented to calculate the fracture stress of ultra-thin flexible silicon chips where analytical formulas may not be applied. After calculating the fracture stress from FEM simulations, the enhancement in robustness of ultra-thin chips (UTCs) against external load has also been proved and quantified with further experimental investigations. Besides, FEM simulations have also been used to analyse the effect of Young’s Modulus of embedding materials on the robustness of the embedded UTCs. Furthermore, embedding the UTCs in polymer layers has also been experimentally proven to be an effective solution to reduce the influence of thinning and dicing induced damages on the robustness of the embedded UTCs. Traditional interconnection techniques such as wire bonding may not be implemented to interconnect ultra-thin silicon ICs owing to the high mechanical forces involved in the processes that would crack the chips. Therefore, two novel interconnection methods namely (i) flip-chip bonding with Anisotropic Conductive Adhesive (ACA) and (ii) face-up direct metal interconnection have been implemented in this thesis to interconnect ultra-thin silicon ICs to the corresponding interposer patterns on foil substrates. The CFP samples thus fabricated were then used for the dynamic bending reliability investigations. A custom-built test equipment was developed to facilitate the dynamic bending reliability investigations of CFPs. Experimental investigations revealed that the failure of CFPs under dynamic bending was caused mainly by the cracking of the redistribution layer (RDL) interconnecting the chip and the foil. Furthermore, it has also been shown that the CFPs are more vulnerable to repeated compressive bending than to repeated tensile bending. Then, the influence of dimensional factors such as the thickness of the chip as well as the RDL on the dynamic bending reliability of CFPs have also been studied. Upon identifying the plausible cause behind the cracking of the RDL leading to the failure of the CFPs, two methods to improve the dynamic bending reliability of the RDL have been suggested and demonstrated with experimental investigations. The experimental investigations presented in this thesis adds some essential information to the state-of-the-art concerning the static and the dynamic bending reliability of UTCs integrated in polymer foils that are not yet available in the literature and aids to establish in-depth knowledge of mechanical reliability of the components required for manufacturing future FHE systems. The strategies devised to enhance the robustness of UTCs and CFPs could serve as guidelines for fabricating reliable FHE components and systems.

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Book chapters on the topic "Silicon foils"

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Flores, José G., José Cervantes, and José Lemus-Ruiz. "Joining of Silicon Nitride to Metal (Mo and Ti) Using a Cu-Foil Interlayer." In Materials Science Forum, 99–104. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-993-8.99.

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Gleskova, Helena, I.-Chun Cheng, Sigurd Wagner, and Zhigang Suo. "Mechanical Theory of the Film-on-Substrate-Foil Structure: Curvature and Overlay Alignment in Amorphous Silicon Thin-Film Devices Fabricated on Free-Standing Foil Substrates." In Flexible Electronics, 29–51. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-74363-9_2.

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Jones, David Martin. "Conclusion." In History's Fools, 291–308. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780197510612.003.0011.

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If the politics of prudent diffidence and the restoration of political balance, civil association, and limited constitutional rule, proves incapable of recovering political conduct under contingent conditions, what alternative dispositions might mould the contours of our post historical future? This chapter concludes the book by examining how historically body politics have died from a variety of internal and external distempers and how this might be Europe’s fate. It further considers how a brave new artificially intelligent world might organize new liberal and illiberal progressive futures either through a digitally administered party state like China or Singapore or what Silicon Valley envisages as an algorithmically managed, digital oligarchy that renders individual autonomy and democracy redundant. Both envisage a technocratically managed future where AI caters to and defines the needs of a dependent citizen body eking out its days in either a distracted or opiated stupor. Both forms of technocratic rationalism represent the antithesis of the understanding of civil society as a local and contingent compact between the dead, the living, and the yet to be born.

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"Protection of Mo Sealing Foils Using Fused Silica Coatings." In Light Sources 2004 Proceedings of the 10th International Symposium on the Science and Technology of Light Sources, 531–32. CRC Press, 2004. http://dx.doi.org/10.1201/9781482269178-191.

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Sanguigno, Luigi, Marcello Antonio Lepore, and Angelo Rosario Maligno. "Characterization of Titanium Metal Matrix Composites (Ti-MMC) Made Using Different Manufacturing Routes." In Advances in Transdisciplinary Engineering. IOS Press, 2021. http://dx.doi.org/10.3233/atde210030.

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The mechanical and morphological properties of the unidirectional metal matrix composite (MMC) in titanium alloy reinforced with continuous silicon carbide (SiC) fibres are investigated. The lay-up manufacturing process known as the Foil / Fibre (FF) lay-up was compared with the matrix-coated-fibre (CF) method which promises a better final shape of the reinforcing fibre net. Tensile tests were performed to measure mechanical performance of the manufactured MMCs both longitudinally and transversely respect to the direction of SiC fibres. Elastic behaviour of the investigated MMCs was assumed orthotropic and related to mechanical properties and spatial distribution of the MMC constituents: SiC fibres and Titanium (Ti) matrix. This was achieved using micromechanical modelling based on Finite Element (FE) calculations. FE micromechanical modelling was carried out on the Representative Elementary Volume (REV) of the MMC microstructure resolved by non-destructive analysis such as X-Ray tomography. The analysis carried out highlighted and justified mechanical performance difference between composite laminates containing the same amount of SiC reinforcement fibres for unit of volume but made following different manufacturing routes. To compute overall orthotropic behaviour of the MMC laminate, each constituent was assumed as an elastic isotropic heterogeneity during the averaging. This simplify assumption was validated by comparison with experimental data during the mechanical characterization of the investigated MMC composites.

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Conference papers on the topic "Silicon foils"

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Afentakis, Themis, Miltiadis K. Hatalis, Apostolos T. Voutsas, and John W. Hartzell. "High-performance poly-silicon circuits on thin metal foils." In Electronic Imaging 2003, edited by Apostolos T. Voutsas. SPIE, 2003. http://dx.doi.org/10.1117/12.482574.

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S., Hildering, Becsi L., Engel U., Merklein M., and Mescheder U. "High-Precision Blanking of Thin Copper Foils Using Uncoated and Coated Monocrystalline Silicon Punches." In 8th International Conference on Multi-Material Micro Manufacture. Singapore: Research Publishing Services, 2011. http://dx.doi.org/10.3850/978-981-07-0319-6_209.

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Hildering, Sven, Ulf Engel, and Marion Merklein. "Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils." In THE 14TH INTERNATIONAL ESAFORM CONFERENCE ON MATERIAL FORMING: ESAFORM 2011. AIP, 2011. http://dx.doi.org/10.1063/1.3589561.

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Levy, David H., David E. Carlson, Kathryn C. Fisher, Joe V. Carpenter, and Zachary C. Holman. "19.5%-Efficient Back-Contact Silicon Heterojunction Solar Cell With Self Aligned Metallization Using Multilayer Aluminum Foils." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548118.

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Sinicco, Ivan, Mario Gossla, Stefan Krull, Fabia Rakusa, and Florian Roth. "Influence of TiO 2 particles on PVB foils used in silicon based thin film photovoltaic modules." In SPIE Solar Energy + Technology, edited by Neelkanth G. Dhere, John H. Wohlgemuth, and Kevin Lynn. SPIE, 2010. http://dx.doi.org/10.1117/12.861973.

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Wang, Longteng, David E. Carlson, and Mool C. Gupta. "Investigation of metal contacts for silicon solar cells using laser processed 8 μm thick Al foils." In SPIE Solar Energy + Technology, edited by Edward W. Reutzel. SPIE, 2013. http://dx.doi.org/10.1117/12.2024455.

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Hildering, Sven, Markus Michalski, Ulf Engel, and Marion Merklein. "Tool Load Sensitivity Against Multidimensional Process Influences in Microblanking of Thin Metal Foils With Silicon Punches." In ASME 2015 International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/msec2015-9206.

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The continuous trend towards miniaturization of metallic micro parts of high quality at low costs results in the need of appropriate production methods. Mechanical manufacturing processes like forming and blanking meet these demands. One major challenge for the application of them are so called size effects. Especially the downsizing of the required manufacturing tools and adequate positioning causes higher effort with increasing miniaturization. One promising approach for downsizing of tools is the transfer of knowledge from microsystems technology. This study shows the process behavior of etched silicon punches in microblanking operations. For the application as tool material especially the brittle material behavior and sensitivity against tensile stresses have to be considered. These mechanical loads favor wear in form of cracks and breaks at the cutting edge of the punch and decrease tool life. In a special test rig these wear phenomena were observed in microblanking of copper foils. Although high positioning accuracy between tools and workpiece can be assured within this test rig, scatter of tool life is observable. Therefore, a finite element analysis of the tool load in the microblanking process with special respect to tensile stresses was performed. Within the 3D finite element model multidimensional positioning errors like tilting between punch and die were integrated. Their influence on the tool load in form of increasing tensile stresses is evaluated with respect to the type and magnitude of positioning error. Furthermore, the effects of small outbreaks at the cutting edge on the process behavior and tool load are analyzed.

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Jamshidi-Roudbari, Abbas, Po-Chin Kuo, and Miltiadis Hatalis. "Mechanically strained laser crystallized poly-silicon thin film transistors and ring oscillators fabricated on stainless steel foils." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422522.

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Hildering, Sven, Ulf Engel, and Marion Merklein. "Improved Tool Performance in Microblanking of Thin Metal Foils through Defined Cutting Edge Modification of Silicon Punches." In Proceedings of the 4M/ICOMM2015 Conference. Singapore: Research Publishing Services, 2015. http://dx.doi.org/10.3850/978-981-09-4609-8_061.

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S, Hildering, and Engel U. "A Novel Approach for High-precision Blanking of Thin Metal Foils using Monocrystalline Silicon as Tool Material." In 7th International Conference on Multi-Material Micro Manufacture. Singapore: Research Publishing Services, 2010. http://dx.doi.org/10.3850/978-981-08-6555-9_169.

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