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Journal articles on the topic 'Silicon foils'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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1

Hessmann, M. T., T. Kunz, M. Voigt, K. Cvecek, M. Schmidt, A. Bochmann, S. Christiansen, R. Auer, and C. J. Brabec. "Material Properties of Laser-Welded Thin Silicon Foils." International Journal of Photoenergy 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/724502.

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An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1) laser spot welding with low constant feed speed, (2) laser line welding, and (3) keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD) to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

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2

Zeisler, Stefan K., and Vinder Jaggi. "Carbon–silicon stripper foils." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 655, no. 1 (November 2011): 64–65. http://dx.doi.org/10.1016/j.nima.2011.06.022.

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3

Jokubavicius, Valdas, Michl Kaiser, Philip Hens, Peter J. Wellmann, Rickard Liljedahl, Rositza Yakimova, and Mikael Syväjärvi. "Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates." Materials Science Forum 740-742 (January 2013): 19–22. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.19.

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Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

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4

Reimer, L., and I. Fromm. "Electron spectroscopic diffraction at (111) silicon foils." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 382–83. http://dx.doi.org/10.1017/s0424820100153889.

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An electron diffraction pattern (EDP) consists of an overlap of patterns of all energy losses in the electron energy-loss spectrum (EELS). Electron spectroscopic diffraction (ESD) in an energy filtering electron microscope (EFEM) allows to separate the contributions of different energy losses to the unfiltered diagram observed in conventional TEM. We report about diffraction experiments with a Zeiss EM902 on (111) silicon foils which show how the EDP of single-crystal foils changes with increasing energy loss and foil thickness. An EDP normally contains the Bragg spots, diffuse streaks by electron-phonon scattering, excess and defect Kikuchi lines when the number of electrons striking the lattice planes is different from opposite sites, a system of excess (bright) Kikuchi bands with an intensity proportional to the probability ψψ⋆ of the Bloch wave field at the nuclei, and defect Ki-kuchi bands when the number of diffusely scattered electrons is equal on both sides of the lattice plane and the intensity becomes proportional to ΣIg.EDPs of thin foils show an increase of contrast of the Bragg spots and the thermal diffuse streaks when comparing an unfiltered (Fig.1a) and zero-loss filtered EDP (Fig.1b). Because the streaks are caused by elastic scattering, they can not be ob served with the plasmon loss (Fig.1c). Bragg spots are also observed at higher energy losses because all delocalized inelastic scattering processes with energy losses less a few hundred eV show intraband transitions which preserve the type of excited Bloch waves.

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5

Sato, Yuichi, Atomu Fujiwara, Nguyen Duc Trung, and Sora Saito. "Differences in Morphologies of GaN-Based Nanocrystals Grown on Metal-Foils and Multi-Crystalline Si Substrates." Materials Science Forum 941 (December 2018): 2109–14. http://dx.doi.org/10.4028/www.scientific.net/msf.941.2109.

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Gallium nitride (GaN)-based thin films consist of its nanocrystals are grown on some metal-foils and a multi-crystalline silicon (Si) substrates. Their morphologies are compared with each other and the differences are discussed. Pillar-shaped nanocrystals are observed in the film grown on the multi-crystalline Si substrate while such structures are not observed in the films grown on the metal-foils when they are grown at higher growth temperatures. On the other hand, the morphologies of the films grown on the metal-foils approach to pillar-like structures by reducing the growth temperature. Band-edge emission is clearly observed in a cathodoluminescence spectrum of the film grown on the metal-foil at the reduced growth temperature.

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6

Martini, R., Radhakrishnan H. Sivaramakrishnan, V. Depauw, K. Van Nieuwenhuysen, I. Gordon, M. Gonzalez, and J. Poortmans. "Improvement of seed layer smoothness for epitaxial growth on porous silicon." MRS Proceedings 1536 (2013): 97–102. http://dx.doi.org/10.1557/opl.2013.748.

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ABSTRACTIn the last decades many techniques have been proposed to manufacture thin (<50µm) silicon solar cells. The main issues in manufacturing thin solar cells are the unavailability of a reliable method to produce thin silicon foils with contained material losses (kerf-losses) and the difficulties in handling and processing such fragile foils. A way to solve both issues is to grow an epitaxial foil on top of a weak sintered porous silicon layer. The porous silicon layer is formed by electrochemical etching on a thick silicon substrate and then annealed to close the top surface. This surface is employed as seed layer for the epitaxial growth of a silicon layer which can be partially processed while attached on the substrate that provides mechanical support. Afterward, the foil can be bonded on glass, detached and further processed at module level. The efficiency of the final solar cell will depend on the quality of the epitaxial layer which, in turn, depends on the seed layer smoothness.Several parameters can be adjusted to change the morphology and, hence, the properties of the porous layer, both in the porous silicon formation and the succeeding thermal treatment. This work focuses on the effect of the parameters that control the porous silicon formation on the structure of the porous silicon layer after annealing and, more specifically, on the roughness of the top surface. The reported analysis shows how the roughness of the seed layer can be reduced to improve the quality of the epitaxial growth.

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7

Carpenter, R. W., and Peter R. T. Jang. "Very thin foil thickness measurement by energy loss microspectroscopy." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 718–19. http://dx.doi.org/10.1017/s0424820100144966.

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A simple experimental method for quantitative determination of foil thickness in very thin regions used for HREM and microanalysis under the single scattering or thin film approximations would be very useful and timely. Most current methods rely on diffraction and are applicable only to crystalline materials, with a lower thickness limit of about ξg, or are difficult to apply to very thin foils. Energy loss microspectrscopy avoids most of these difficulties. This note reports first applications of the method to wedge foils of silicon and austenitic stainless steel.

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8

Medenwaldt, Robin, and Manfred Hettwer. "Production of Ultra Thin Silicon Foils." Journal of X-Ray Science and Technology 5, no. 2 (1995): 202–6. http://dx.doi.org/10.3233/xst-1995-5203.

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9

MEDENWALDT, R., and M. HETTWER. "Production of ultra thin silicon foils." Journal of X-Ray Science and Technology 5, no. 2 (1995): 202–6. http://dx.doi.org/10.1016/s0895-3996(05)80003-5.

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10

Otsu, Masaaki, Hikaru Fukugawa, and Kazuki Takashima. "C-1 LASER FORMING OF GLASS AND SILICON FOILS(Session: Forming I)." Proceedings of the Asian Symposium on Materials and Processing 2006 (2006): 48. http://dx.doi.org/10.1299/jsmeasmp.2006.48.

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11

Schlemmer, Werner, Armin Zankel, Katrin Niegelhell, Mathias Hobisch, Michael Süssenbacher, Krisztina Zajki-Zechmeister, Michael Weissl, David Reishofer, Harald Plank, and Stefan Spirk. "Deposition of Cellulose-Based Thin Films on Flexible Substrates." Materials 11, no. 12 (November 30, 2018): 2433. http://dx.doi.org/10.3390/ma11122433.

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This study investigates flexible (polyamide 6.6 PA-6.6, polyethylene terephthalate PET, Cu, Al, and Ni foils) and, for comparison, stiff substrates (silicon wafers and glass) differing in, for example, in surface free energy and surface roughness and their ability to host cellulose-based thin films. Trimethylsilyl cellulose (TMSC), a hydrophobic acid-labile cellulose derivative, was deposited on these substrates and subjected to spin coating. For all the synthetic polymer and metal substrates, rather homogenous films were obtained, where the thickness and the roughness of the films correlated with the substrate roughness and its surface free energy. A particular case was the TMSC layer on the copper foil, which exhibited superhydrophobicity caused by the microstructuring of the copper substrate. After the investigation of TMSC film formation, the conversion to cellulose using acidic vapors of HCl was attempted. While for the polymer foils, as well as for glass and silicon, rather homogenous and smooth cellulose films were obtained, for the metal foils, there is a competing reaction between the formation of metal chlorides and the generation of cellulose. We observed particles corresponding to the metal chlorides, while we could not detect any cellulose thin films after HCl treatment of the metal foils as proven by cross-section imaging using scanning electron microscopy (SEM).

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12

Morozumi, Shotaro, Kazuhiko Hamaguchi, Masaaki Iwasaki, Michio Kikuchi, and Yasuhide Minonishi. "Joining of Silicon Nitride with Metal Foils." Journal of the Japan Institute of Metals 54, no. 12 (1990): 1392–400. http://dx.doi.org/10.2320/jinstmet1952.54.12_1392.

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13

Schaefer, Lorenz, Holger Koch, Katja Tangermann-Gerk, Maik Hessmann, Thomas Kunz, Thomas Frick, and Michael Schmidt. "Laser based joining of monocrystalline silicon foils." Physics Procedia 5 (2010): 503–10. http://dx.doi.org/10.1016/j.phpro.2010.08.173.

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14

Qiu, X., and J. Wang. "Bonding silicon wafers with reactive multilayer foils." Sensors and Actuators A: Physical 141, no. 2 (February 2008): 476–81. http://dx.doi.org/10.1016/j.sna.2007.10.039.

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15

OKA, Jumpei, Masaaki OTSU, and Kazuki TAKASHIMA. "Laser Forming of Single Crystalline Silicon Foils." Journal of Solid Mechanics and Materials Engineering 3, no. 4 (2009): 679–90. http://dx.doi.org/10.1299/jmmp.3.679.

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16

JOHN KENNEDY, V., G. TERWAGNE, and G. DEMORTIER. "A PROCEDURE FOR GOLD SOLDERING USING A Si-Au ALLOY PRODUCED BY Si IMPLANTATION IN Au." Modern Physics Letters B 15, no. 28n29 (December 20, 2001): 1339–47. http://dx.doi.org/10.1142/s0217984901003251.

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Pure polycrystalline Au foils were rolled at room temperature to a thickness of 35 μm. Different doses of high energy Si ions (0.2-4.5 MeV) obtained from the 2 MV Tandetron accelerator at LARN were implanted in polycrystalline Au foils to produce a low melting point Au-Si alloy. Au-Si eutectic structure has been observed in the implanted Au foils after annealing at 400°C for 1 h. The Au-Si liquid phase diffused into the polycrystalline Au foil along the grain boundaries, which were flattened by the initial rolling procedure. The presence of this eutectic alloy was observed by Secondary Electron Microscopy (SEM) of the Au foil. Nuclear (d,p) reactions induced by deuterons have been used to measure the concentration of the implanted Si in various depths in the Au foils. Rutherford Backscattering Spectrometry (RBS) was also used as a complementary technique to probe for Au . SEM pictures indicate that a eutectic structure was induced in the implanted samples. A pure gold piece is put on top of the region where the silicon has been incorporated by diffusion and the two pieces were simply reheated at 400°C. After a few minutes, the two pieces were bonded, giving a perfect joint. SEM images of the joining region confirmed this situation by showing a clean soldered region.

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17

Kalejs, Juris P. "Silicon ribbons and foils—state of the art." Solar Energy Materials and Solar Cells 72, no. 1-4 (April 2002): 139–53. http://dx.doi.org/10.1016/s0927-0248(01)00159-3.

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18

Beck, A., J. Geissler, D. Helmreich, and R. Wahlich. "Shaped crystal growth of silicon foils by raft." Journal of Crystal Growth 82, no. 1-2 (March 1987): 127–33. http://dx.doi.org/10.1016/0022-0248(87)90176-x.

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19

Bearda, Twan, Ivan Gordon, Hariharsudan Sivaramakrishnan Radhakrishnan, Valérie Depauw, Kris Van Nieuwenhuysen, Menglei Xu, Loic Tous, et al. "Thin Epitaxial Silicon Foils Using Porous-Silicon-Based Lift-Off for Photovoltaic Application." MRS Advances 1, no. 48 (2016): 3235–46. http://dx.doi.org/10.1557/adv.2016.314.

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ABSTRACTIn order to reduce the material cost for silicon solar cells, several research groups are investigating methods to minimize the silicon consumption for making monocrystalline silicon wafers. One promising approach is deposition of an epitaxial layer on porous silicon, followed by detachment of the layer. This contribution discusses improvements in the epitaxial wafer fabrication by optimization of the porosification process. The introduction of a layered porous silicon structure allows to independently improve both epitaxial layer quality and detachment yield. In this way, we have managed to obtain 100µm thick silicon wafers with effective lifetimes up to 1.3ms, and 40µm thick wafers with effective lifetimes up to 700µs. We will also review the current status of the process development for solar cells made on thin wafers. Two approaches are presented. In the first approach, heterojunction solar cells are fabricated on freestanding epitaxial wafers of 40µm thickness. In the second approach, high efficiency (21%) heterojunction back-contacted cells are fabricated on wafers that are bonded to a glass superstrate. Challenges for device processing and limitations in cell performance are discussed.

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20

Qiu, Xiaotun, David Welch, Jennifer Blain Christen, Rui Tang, Jie Zhu, Jonathon Oiler, Cunjiang Yu, Ziyu Wang, and Hongyu Yu. "Localized Parylene-C Bonding for Micro Packaging and Cell Encapsulation using Reactive Multilayer Foils." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (January 1, 2010): 000925–40. http://dx.doi.org/10.4071/2010dpc-tp22.

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This abstract described a novel physiologically compatible wafer bonding technique for bio-microelectromechnical systems (bio-MEMS) packaging. Room temperature bonding was performed between Parylene-C and silicon wafers with a thin Parylene-C coating using reactive Ni/Al multilayer foils as localized heaters. Live NIH 3T3 mouse fibroblast cells were encapsulated in the package and they survived the bonding process owing to the localization of heating. A numerical model was developed to predict the temperature evolutions in the parylene layers, silicon wafer and the encapsulated liquid during the bonding process. The simulation results were in agreement with the cell encapsulation experiment revealing that localized heating occurred in this bonding approach. This study proved the feasibility of reactive multilayer foil bonding technique for broad applications in packaging bio-MEMS and microfluidic systems.

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21

OTSU, Masaaki, Hikaru FUKUGAWA, and Kazuki TAKASHIMA. "Laser Forming of Single Crystalline Silicon and Glass Foils." Journal of the Japan Society for Technology of Plasticity 49, no. 570 (2008): 675–79. http://dx.doi.org/10.9773/sosei.49.675.

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22

Büchter, B., F. Seidel, R. Fritzsche, D. Lehmann, D. Bülz, R. Buschbeck, A. Jakob, et al. "Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions." Journal of Materials Science 50, no. 18 (June 12, 2015): 6050–59. http://dx.doi.org/10.1007/s10853-015-9154-2.

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23

Beck, A., J. Geissler, and D. Helmreich. "Substrate development for the growth of silicon foils by Ramp Assisted Foil Casting Technique (RAFT)." Journal of Crystal Growth 104, no. 1 (July 1990): 113–18. http://dx.doi.org/10.1016/0022-0248(90)90318-f.

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24

Chandra, Aditi, Mao Takashima, and Arvind Kamath. "Silicon and Dopant Ink-Based CMOS TFTs on Flexible Steel Foils." MRS Advances 2, no. 23 (2017): 1259–65. http://dx.doi.org/10.1557/adv.2017.227.

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ABSTRACTPolysilicon complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs) are fabricated on large area, flexible stainless steel foils using novel ink depositions within a hybrid printed/conventional process flow. A self-aligned top gate TFT structure is realized with an additive materials approach to substitute the use of high capital cost ion implantation and lithography processes. Polyhydrosilane-based silicon ink is coated and laser crystallized to form the polysilicon channel. Semiconductor grade P-type and N-type unique dopant ink formulations are screen printed and combined with thermal drive in and activation to form self-aligned doped source and drain regions. A high refractory top gate material is chosen for its process compatibility with printed dopants, chemical resistance, and work function. Steel foil substrates are fully encapsulated to allow for high temperature processing. The resultant materials set and process flow enables TFT electrical characteristics with NMOS and PMOS mobilities exceeding 120 cm2/Vs and 60 cm2/Vs, respectively. On/Off ratios are >107. Reproducibility, uniformity, and reliability data in a production environmental is shown to demonstrate high volume, high throughput manufacturability. The device characteristics and scheme enable NFC (13.56MHz) capable circuits for use in flexible NFC and display-based smart labels and packaging.

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25

Wee, Sung Hun, Claudia Cantoni, Thomas R. Fanning, Charles W. Teplin, Daniela F. Bogorin, Jon Bornstein, Karen Bowers, et al. "Heteroepitaxial film silicon solar cell grown on Ni-W foils." Energy & Environmental Science 5, no. 3 (2012): 6052. http://dx.doi.org/10.1039/c2ee03350j.

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26

OTSU, Masaaki, Hikaru FUKUGAWA, and Kazuki TAKASHIMA. "2905 Bending of Glass and Silicon foils by Laser Forming." Proceedings of the JSME annual meeting 2006.1 (2006): 343–44. http://dx.doi.org/10.1299/jsmemecjo.2006.1.0_343.

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27

Maeda, Masakatsu, Osamu Igarashi, Toshiya Shibayanagi, and Masaaki Naka. "Solid State Diffusion Bonding of Silicon Nitride Using Vanadium Foils." MATERIALS TRANSACTIONS 44, no. 12 (2003): 2701–10. http://dx.doi.org/10.2320/matertrans.44.2701.

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28

Maeda, Masakatsu, Ryozo Oomoto, Toshiya Shibayanagi, and Masaaki Naka. "Solid-state diffusion bonding of silicon nitride using titanium foils." Metallurgical and Materials Transactions A 34, no. 8 (August 2003): 1647–56. http://dx.doi.org/10.1007/s11661-003-0310-y.

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29

Akimchenko, I. P., Yu V. Barmin, V. S. Vavilov, I. V. Zolotukhin, V. I. Gavrilenko, and V. G. Litovchenko. "Optical properties and structure of free (substrateless) amorphous silicon foils." Thin Solid Films 138, no. 1 (April 1986): 21–25. http://dx.doi.org/10.1016/0040-6090(86)90211-7.

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30

Niepelt, Raphael, Jan Hensen, Alwina Knorr, Verena Steckenreiter, Sarah Kajari-Schöder, and Rolf Brendel. "High-quality Exfoliated Crystalline Silicon Foils for Solar Cell Applications." Energy Procedia 55 (2014): 570–77. http://dx.doi.org/10.1016/j.egypro.2014.08.028.

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31

Palavesam, Nagarajan, Waltraud Hell, Andreas Drost, Christof Landesberger, Christoph Kutter, and Karlheinz Bock. "Influence of Flexibility of the Interconnects on the Dynamic Bending Reliability of Flexible Hybrid Electronics." Electronics 9, no. 2 (February 1, 2020): 238. http://dx.doi.org/10.3390/electronics9020238.

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The growing interest towards thinner and conformable electronic systems has attracted significant attention towards flexible hybrid electronics (FHE). Thin chip-foil packages fabricated by integrating ultra-thin monocrystalline silicon integrated circuits (ICs) on/in flexible foils have the potential to deliver high performance electrical functionalities at very low power requirements while being mechanically flexible. However, only very limited information is available regarding the fatigue or dynamic bending reliability of such chip-foil packages. This paper reports a series of experiments where the influence of the type of metal constituting the interconnects on the foil substrates on their dynamic bending reliability has been analyzed. The test results show that chip-foil packages with interconnects fabricated from a highly flexible metal like gold endure the repeated bending tests better than chip-foil packages with stiffer interconnects fabricated from copper or aluminum. We conclude that further analysis work in this field will lead to new technical concepts and designs for reliable foil based electronics.

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32

Martini, R., J. Kepa, M. Debucquoy, V. Depauw, M. Gonzalez, I. Gordon, A. Stesmans, and J. Poortmans. "Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells." Applied Physics Letters 105, no. 17 (October 27, 2014): 173906. http://dx.doi.org/10.1063/1.4901026.

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33

Myers, S. A., and C. C. Koch. "The effect of composition and cooling rate on the structure of rapidly solidified (Fe, Ni)3Al–C alloys." Journal of Materials Research 4, no. 1 (February 1989): 44–49. http://dx.doi.org/10.1557/jmr.1989.0044.

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There is controversy in the literature regarding the existence of the metastable γ′ phase with an ordered Ll2 structure in rapidly solidified Fe–Ni–Al–C alloys. In this study, the quench rate–metastable structure dependence was examined in the Fe–20Ni–8Al–2C (weight percent) alloy. The effect of silicon on the kinetics of phase formation was studied by adding two weight percent silicon to a base alloy of Fe–20Ni–8Al–2C. Samples were rapidly solidified in an arc hammer apparatus and examined by transmission electron microscopy. In the Fe–20Ni–8Al–2C alloy, the nonequilibrium γ′ and γ phases were found in foils 65 to 100 μm thick. At higher quench rates, i.e., thinner samples, the matrix was observed to be disordered fcc γ with K-carbide precipitates. Samples containing silicon were found to have a matrix composed of γ′ and γ structures when the foils were thicker than 40 μm. At higher quench rates, the matrix was disordered fcc γ with K-carbide precipitates. The nonequilibrium γ′ and γ structures are present in samples with or without silicon, but are observed at higher cooling rates with the addition of silicon. This sensitivity to cooling rate and composition in resulting metastable structures may explain the differences reported in the literature for these rapidly solidified materials.

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34

Pashova, Katya, Elyes Dhaouadi, Ivaylo Hinkov, Ovidiu Brinza, Yves Roussigné, Manef Abderrabba, and Samir Farhat. "Graphene Synthesis by Inductively Heated Copper Foils: Reactor Design and Operation." Coatings 10, no. 4 (March 25, 2020): 305. http://dx.doi.org/10.3390/coatings10040305.

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We report on the design of a reactor to grow graphene via inductively heating of copper foils by radio frequency (RF) magnetic fields. A nearly uniform magnetic field induced by Helmholtz-like coils penetrates the copper foil generating eddy currents. While the frequency of the current is being rapidly varied, the substrate temperature increases from room temperature to ~1050 °C in 60 s. This temperature is maintained under Ar/H2 flow to reduce the copper, and under Ar/H2/CH4 to nucleate and grow the graphene over the entire copper foil. After the power cut-off, the temperature decreases rapidly to room temperature, stopping graphene secondary nucleation. Good quality graphene was obtained and transferred onto silicon, and coated with a 300 nm layer of SiO2 by chemical etching of the copper foil. After synthesis, samples were characterized by Raman spectroscopy. The design of the coils and the total power requirements for the graphene induction heating system were first estimated. Then, the effect of the process parameters on the temperature distribution in the copper foil was performed by solving the transient and steady-state coupled electromagnetic and thermal problem in the 2D domain. The quantitative effects of these process parameters were investigated, and the optimization analysis results are reported providing a root toward a scalable process for large-sized graphene.

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35

Narayanan, Manoj, Beihai Ma, Rachel Koritala, Sheng Tong, and U. Balachandran. "Chemical Solution Deposition of High-Quality SrRu O3 Thin-Film Electrodes and the Dielectric Properties of Integrated Lead Lanthanum Zirconate Titanate Films for Embedded Passives." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, CICMT (September 1, 2011): 000235–40. http://dx.doi.org/10.4071/cicmt-2011-wp22.

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Ferroelectric film-on-foil capacitors are suitable to replace discrete passive components in the quest to develop electronic devices that show superior performance and are smaller in size. The film-on-foil approach is the most viable method to fabricate such components. Films of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) were deposited on SrRuO3 (SRO) buffer films over nickel and silicon substrates. High-quality polycrystalline SRO thinfilm electrodes were first deposited by chemical solution deposition. The optimized crystallization temperature of the SRO films was determined by studying the phase, microstructure, and electrical properties. A phase pure, dense, uniform microstructure with grain size < 100 nm was obtained in films crystallized between 700 and 750°C. The room-temperature resistivity of the SRO films crystallized at 700°C was ~800–900 μΩ-cm. The dielectric properties of sol-gel derived PLZT capacitors on SRO-buffered nickel were evaluated as a function of temperature, bias field, and frequency, and the results were compared to those of the same films on silicon substrates. The comparison demonstrated the integrity of the buffer layer and its compatibility with nickel substrates. Device-quality dielectric properties were measured on PLZT films deposited on SRObuffered nickel foils and found to be comparable to those for PLZT on SRO-buffered silicon and expensive platinized silicon. These results suggest that SRO films can act as an effective barrier layer on nickel substrates suitable for embedded capacitor applications.

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36

FINK, D., A. V. PETROV, W. R. FAHRNER, K. HOPPE, R. M. PAPALEO, A. S. BERDINSKY, A. CHANDRA, A. ZRINEH, and L. T. CHADDERTON. "ION TRACK-BASED NANOELECTRONICS." International Journal of Nanoscience 04, no. 05n06 (October 2005): 965–73. http://dx.doi.org/10.1142/s0219581x05003930.

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In the last years, concepts have been developed to use etched ion tracks in insulators, such as polymer foils or silicon oxide layers as hosts for nano- and microelectronic structures. Depending on their etching procedure and the thickness of the insulating layer in which they are embedded, such tracks have typical diameters between some 10 nm and a few μm and lengths between some 100 nm and some 10 μm. Due to their extremely high aspect ratios, and due to the possibility to cover very large sample areas, they exceed the potential of nanolithography. In this paper, the strategies of etched ion track manipulation are briefly outlined, that lead to the formation of nanotubules, nanowires, or tubular arrangements of nanoclusters. Examples where nanoelectronic structures are based on single ion tracks, are nanocondensors or sensors for temperature, light, pressure, humidity and/or alcohol vapor. By combination of ion track metallization and conducting track-to-track connections on the foil surface, micromagnets, microtransformers and microcondensors could be formed within polymer foils. Finally, we present our new "TEMPOS" (Tunable Electronic Material with Pores in Oxide on Silicon) concept where nanometric pores, produced by etching of tracks in silicon oxide on silicon wafers, are used as charge extraction (or injection) channels. In comparison with the metal oxide semiconductor field effect transistors (MOS-FETs), the TEMPOS structures have a number of additional parameters (such as the track diameter, density, and shape, and the material embedded therein and its spatial distribution) which makes these novel structures much more complex. This eventually leads to higher compactation of the TEMPOS circuits and to unexpected electronic properties. TEMPOS structures can overtake the function of tunable resistors, condensors, photocells, hygrocells, diodes, sensors, and other elements. As an example, some corresponding current/voltage relations and TEMPOS circuits are presented. In this work we concentrate on TEMPOS structures with fullerene and phthalocyanine. Though not yet verified, TEMPOS structures could, in principle, be scaled down to nanometer sizes.

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37

Ma, Beihai, Manoj Narayanan, Shanshan Liu, Sheng Tong, and U. (Balu) Balachandran. "Development of High Dielectric Strength Ceramic Film Capacitors for Advanced Power Electronics**." Journal of Microelectronics and Electronic Packaging 10, no. 1 (January 1, 2013): 1–7. http://dx.doi.org/10.4071/imaps.369.

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Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) sub-strates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ∼25.4 μC/cm2 and ∼10.1 μC/cm2; coercive electric field, ∼23.8 kV/cm and ∼27.9 kV/cm; dielectric constant at room temperature, ∼1300 and ∼1350; and dielectric loss at room temperature, ∼0.06 and ∼0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ∼−520 MPa in the ∼2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ∼210 MPa in the ∼2-μm-thick PLZT grown on PtSi substrates.

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38

Ma, Beihai, Manoj Narayanan, Shanshan Liu, Sheng Tong, and U. (Balu) Balachandran. "Development of High-Dielectric-Strength Ceramic Film Capacitors for Advanced Power Electronics." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000609–16. http://dx.doi.org/10.4071/isom-2012-wa33.

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Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ≈25.4 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ≈-520 MPa in the ≈2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ≈210 MPa in the ≈2-μm-thick PLZT grown on PtSi substrates.

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39

Prathap, P., A. Slaoui, and X. Maeder. "Thin silicon films synthesis by AIC on ONO coated metal foils." Energy Procedia 2, no. 1 (August 2010): 189–94. http://dx.doi.org/10.1016/j.egypro.2010.07.027.

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40

Morozumi, S., M. Endo, M. Kikuchi, and K. Hamajima. "Bonding mechanism between silicon carbide and thin foils of reactive metals." Journal of Materials Science 20, no. 11 (November 1985): 3976–82. http://dx.doi.org/10.1007/bf00552387.

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41

Bellanger, Pierre, and João Serra. "Room Temperature Spalling of Thin Silicon Foils Using a Kerfless Technique." Energy Procedia 55 (2014): 873–78. http://dx.doi.org/10.1016/j.egypro.2014.08.071.

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42

VAN BRUG, H., F. BIJKERK, H. C. GERRITSEN, K. MURAKAMI, and M. J. VAN DER WIEL. "TIME RESOLVED X-RAY ABSORPTION MEASUREMENTS ON PULSED LASER IRRADIATED THIN SILICON FOILS AND SILICON PLASMAS." Le Journal de Physique Colloques 47, no. C8 (December 1986): C8–193—C8–198. http://dx.doi.org/10.1051/jphyscol:1986836.

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43

Du, Van An, Titel Jurca, George R. Whittell, and Ian Manners. "Aluminum borate nanowires from the pyrolysis of polyaminoborane precursors." Dalton Transactions 45, no. 3 (2016): 1055–62. http://dx.doi.org/10.1039/c5dt03324a.

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Polyaminoboranes [N(R)H-BH₂]_n (1: R = H, 2: R = Me) were pyrolyzed on a range of substrates: silicon, metal foils (stainless steel, nickel, and rhodium), and sapphire wafers, as well as on Al₂O₃ and AlN powders.

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44

Potter, D. J., and G. J. Tatlock. "Void Formation and Filling under Alumina Scales Formed on Fe-20Cr-5Al Alloy Thin Foils." Materials Science Forum 595-598 (September 2008): 1093–101. http://dx.doi.org/10.4028/www.scientific.net/msf.595-598.1093.

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The oxidation behaviour and the subsequent chemical failure of a Fe-20Cr-5Al based alloy were studied at 1200°C in laboratory air, at times of up to 700 hours. Tests on 70 micron thick foils, showed void formation at the metal/oxide interface soon after the aluminium content in the alloy dropped below a critical level (≤0.5 wt%). At this stage, the alloy could no longer sustain alumina scale formation and resulted in the initiation and development of a Cr-rich sub-layer. This chromia layer was found to be continuous and of a uniform thickness. As the sub-layer formed, voids were also observed at the metal/oxide interface. The voids were found to fill with chromia after further exposure. It is thought that the change in oxide growth mechanism from alumina to chromia growth is responsible for the void formation. This also explains the lack of void formation during the sustainable growth of the alumina scale. The introduction of silicon to the Fe-20Cr-5Al based alloy via a diffusion couple was found to significantly influence the oxidation behaviour of the thin foils. Void formation was observed directly beneath the alumina scale and filled voids were now found to contain silicon oxide rather than chromia. The void filling mechanism also appeared to be different. With chromia filled voids, the filling commenced from the underside of the oxide, with the oxide growing inwards, while silica containing voids were filled by silica growing outwards into the void from the substrate. Throughout the study, optical and scanning electron microscopes were used to analyse all stages of oxidation and the subsequent failure of the thin foil samples. EBSD was also used to generate a more comprehensive analysis of selected locations.

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Takeda, S., K. Koto, Masako Hirata, T. Kuno, S. Iijima, and T. Ichihashi. "Electron Irradiation Effects in Silicon Thin Foils Under Ultra-High Vacuum Environment." Materials Science Forum 258-263 (December 1997): 553–58. http://dx.doi.org/10.4028/www.scientific.net/msf.258-263.553.

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46

Mathot, S., and G. Demortier. "Diffusion of silicon in polycrystalline gold foils observed with a PIXE microprobe." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 49, no. 1-4 (April 1990): 504–8. http://dx.doi.org/10.1016/0168-583x(90)90301-a.

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47

Talebi, Mohammad, Hamid Bakhtiari, and Zahra Bakhtiari. "Studying the Intermetallic Compounds in the Microstructure of the 8006 Aluminum Alloy Sheets and Foils." Mapta Journal of Mechanical and Industrial Engineering (MJMIE) 5, no. 1 (April 2, 2021): 11–17. http://dx.doi.org/10.33544/mjmie.v5i1.161.

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This research studies the microstructure of the 8006 alloys (AlFeMn), which is transformed into sheets and foils with different thicknesses during rolling. The 8006 alloys are mostly manufactured through a two roller casting process. The microstructure of the sheets produced by this method is fine and suitable. The chemical formula of the alloy includes 1.2%-2% Fe, 0.3%-1% Mn and a maximum of 0.3% Si. The experiments confirm the presence of iron, manganese, and silicon compounds in the 8006 alloy structure during casting and rolling. A scanning electron microscopy and EDS analysis were employed to examine the intermetallic compounds, and it was determined that the particles in the intermetallic compounds of AlFeMn in foils are smaller than the particles of these compounds in sheets.

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48

Tsuda, Hiroshi, Shigeo Mori, Michael C. Halbig, Mrityunjay Singh, and Rajiv Asthana. "Transmission Electron Microscopy of Interfaces in Diffusion-Bonded Silicon Carbide Ceramics." Advances in Science and Technology 88 (October 2014): 139–47. http://dx.doi.org/10.4028/www.scientific.net/ast.88.139.

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Diffusion bonding was used to join silicon carbide (SiC) to SiC substrates using three kinds of interlayers: physical-vapor-deposited (PVD) Ti coatings (10 and 20 μm) on the substrate, Ti foils (10 and 20 μm), and a Mo–B foil (25 μm). Two types of substrates were used: chemical-vapor-deposited SiC and SiC fiber bonded ceramic (SA-TyrannohexTM), the latter having a microstructure consisting of SiC fibers and a carbon layer. The microstructures of the phases formed during diffusion bonding were investigated using transmission electron microscopy (TEM) and selected-area diffraction analysis. TEM samples were prepared using a focused ion beam, which allowed samples to be taken from the reacted area. The effect of the interlayer material and the direction of the SiC fibers in the substrate with respect to the interlayer was evaluated. Scanning electron microscopy and TEM revealed good diffusion bonds in all samples; however, some samples exhibited small amounts of microcracking. The diffusion bonded CVD SiC sample using the 10-μm-thick PVD-Ti interlayer formed more of the stable phase and less of the intermediate phases than the sample using the Ti foil. This behavior was caused by the presence of columnar Ti grains in the interlayer, which may have enhanced the migration of Si and C atoms in the interlayer. In the SA-Tyrannohex samples using the Ti-foil interlayer, the chemical reaction proceeded more rapidly when the fibers were parallel to the interlayer than when they were perpendicular. This behavior was likely caused by the hexagonal carbon layer always facing the Ti interlayer in the sample with perpendicular fibers; this peculiar microstructure reduced the mobility of Si and C migrating into the interlayer. The SA-Tyrannohex sample using the Mo–B foil as the interlayer had excellent diffusion bonds with no microcracks or voids. In this system, Mo5Si3C, Mo2C, and Mo5Si3formed. While phases have anisotropic coefficient of thermal expansion (CTE), the CTE mismatch between those phases and the substrate was apparently smaller than the mismatch in the samples using Ti interlayers.

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Jemian, P. R., and G. G. Long. "Silicon photodiode detector for small-angle X-ray scattering." Journal of Applied Crystallography 23, no. 5 (October 1, 1990): 430–32. http://dx.doi.org/10.1107/s0021889890005167.

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A photodiode X-ray detector was built to measure small-angle X-ray scattering (SAXS) at a synchrotron-radiation source in conjunction with a double-crystal diffractometer SAXS camera at photon energies between 5 and 11 keV. The photodiode detector response in this energy range is linear at photon counting rates up to 1012 photons s−1 and thus it was not necessary to attenuate the monochromatic X-ray beam with calibrated foils. SAXS data taken with a scintillation counter and the photodiode detector are compared, demonstrating marked improvement in counting statistics, rate of data acquisition and signal-to-noise ratio.

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Kumar, K., A. Khalatpour, G. Liu, J. Nogami, and N. P. Kherani. "Converging photo-absorption limit in periodically textured ultra-thin silicon foils and wafers." Solar Energy 155 (October 2017): 1306–12. http://dx.doi.org/10.1016/j.solener.2017.07.076.

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