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Journal articles on the topic 'Silicon heterojunction (SHJ) solar cells'

Author: Grafiati

Published: 3 June 2025

Last updated: 1 August 2025

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1

Lee, Doowon, Myoungsu Chae, Jong-Ryeol Kim, and Hee-Dong Kim. "Effects of Al2O3 Thickness in Silicon Heterojunction Solar Cells." Inorganics 11, no. 3 (2023): 106. http://dx.doi.org/10.3390/inorganics11030106.

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In this paper, we investigate the effects of aluminum oxide (Al2O3) antireflection coating (ARC) on silicon heterojunction (SHJ) solar cells. Comprehensive ARCs simulation with Al2O3/ITO/c-Si structure is carried out and the feasibility to improve the short circuit current density (JSC) is demonstrated. Based on the simulation results, we apply Al2O3 ARC on SHJ solar cells, and the increasement in JSC to 1.5 mA/cm2 is observed with an Al2O3 layer thickness of 20 nm. It is because the total reflectance of SHJ solar cells is decreased by the shifting of the wavelength range on constructive and d

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Li, Xingliang, Qiaojing Xu, Lingling Yan, et al. "Silicon heterojunction-based tandem solar cells: past, status, and future prospects." Nanophotonics 10, no. 8 (2020): 2001–22. http://dx.doi.org/10.1515/nanoph-2021-0034.

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Abstract Due to stable and high power conversion efficiency (PCE), it is expected that silicon heterojunction (SHJ) solar cells will dominate the photovoltaic market. So far, the highest PCE of the SHJ-interdigitated back contact (IBC) solar cells has reached 26.7%, approximately approaching the theoretical Shockley–Queisser (SQ) limitation of 29.4%. To break through this limit, multijunction devices consisting of two or three stacked subcells have been developed, which can fully utilize the sunlight by absorbing different parts of the solar spectrum. This article provides a comprehensive over

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Hsu, Chia-Hsun, Xiao-Ying Zhang, Ming Jie Zhao, Hai-Jun Lin, Wen-Zhang Zhu, and Shui-Yang Lien. "Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer." Crystals 9, no. 8 (2019): 402. http://dx.doi.org/10.3390/cryst9080402.

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Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology compute

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Shi, Cuihua, Jiajian Shi, Zisheng Guan, and Jia Ge. "Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells." Materials 16, no. 8 (2023): 3144. http://dx.doi.org/10.3390/ma16083144.

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Silicon heterojunction (SHJ) solar cells are increasingly attracting attention due to their low-temperature processing, lean steps, significant temperature coefficient, and their high bifacial capability. The high efficiency and thin wafer nature of SHJ solar cells make them ideal for use as high-efficiency solar cells. However, the complicated nature of the passivation layer and prior cleaning render a well-passivated surface difficult to achieve. In this study, developments and the classification of surface defect removal and passivation technologies are explored. Further, surface cleaning a

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5

Chen, Jing Wei, Lei Zhao, Su Zhou, et al. "Preparation of Large Size Pyramidal Texture on N-Type Monocrystalline Silicon Using TMAH Solution for Heterojunction Solar Cells." Advanced Materials Research 476-478 (February 2012): 1815–19. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.1815.

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Pyramidal texture is one traditional method to realize antireflection for c-Si solar cells, due to its low cost and simplicity. As one high efficiency silicon solar cell, amorphous/crystalline silicon heterojunction (SHJ) solar cell has attracted much attention all over the world. The heterojunction interface with very low defects and interface states is critical to the SHJ solar cell performance. In order to obtain high quality interface passivation by depositing a very thin intrinsic amorphous silicon layer on the textured Si conformally, large size pyramidal texture with no metal ion contam

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Abolmasov S. N., Abramov A. S., Verbitskii V. N., Shelopin G. G., Kochergin A. V., and Terukov E. I. "Formation of a copper contact grid on the surface of silicon heterojunction solar cells." Semiconductors 56, no. 5 (2022): 348. http://dx.doi.org/10.21883/sc.2022.05.53433.9787.

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A comparative analysis of various methods of forming a copper (Cu) contact grid on the surface of silicon heterojunction solar cells (SHJ SC) as an alternative to the standard screen printing method using expensive silver-containing (Ag) pastes is presented. It has been shown that the use of inkjet printing for the formation of protective dielectric masks based on an organic polymer and thin buffer metal layers for the growth of a Cu contact grid by electroplating makes it possible to form a contact grid of the required shape and having sufficient adhesion to the surface of SHJ SC. Using this

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7

Yuan Heze, Chen Xinliang, Liang Bingquan, et al. "Research progress in passivation layer technology for crystalline silicon solar cells." Acta Physica Sinica 74, no. 4 (2025): 0. https://doi.org/10.7498/aps.74.20241292.

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Under the background of rapid advancements in photovoltaic technology, crystalline silicon (c-Si) solar cells, as the mainstream photovoltaic devices, have gained significant research attention for their excellent performances. In particular, silicon heterojunction (SHJ) solar cells, TOPCon (Tunnel Oxide Passivated Contact), and PERC (Passivated Emitter and Rear Cell) represent the cutting-edge technologies in c-Si solar cells. The surface passivation layer of crystalline silicon solar cells, as one of the key factors to improve cell performances, has been closely linked to the development of

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Fischer, Andreas, Ioan Voicu Vulcanean, Sebastian Pingel, Anamaria Moldovan, and Jochen Rentsch. "Impact of handling defects towards SHJ cell parameters." EPJ Photovoltaics 13 (2022): 14. http://dx.doi.org/10.1051/epjpv/2022009.

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Within this paper, a systematic approach will be presented to specify the influence of defects caused by vacuum grippers onto silicon heterojunction solar cell parameters. The study focuses on the comparison between handling-induced defects originating from handling on the emitter or non-emitter side, and the comparison of handling-induced defects originating from handling before and after plasma enhanced chemical vapor deposition. The analysis was carried out by means of J–V measurements on manufactured silicon heterojunction solar cells and by means of suns photoluminescence imaging measurem

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Zerbo, Bienlo Flora, Mircea Modreanu, Ian Povey, et al. "Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics." Crystals 12, no. 10 (2022): 1363. http://dx.doi.org/10.3390/cryst12101363.

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Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-silicon heterojunction solar cells, consisting of a preliminary study of the MoS2 material and numerical device simulations of MoS2/Si heterojunction solar cells, using SILVACO ATLAS. Through the optical and structural characterization of MoS2/SiO2/Si samples, we found a significant sensitivity of the MoS2 to ambient oxidation. Optical ellipsometry

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10

Sharma, Mansi. "Commentary on “Review on Nanocrystalline Silicon Thin Films for Heterojunction Solar Cells”." Journal of Nanotechnology and Nanomaterials 5, no. 1 (2024): 22–25. http://dx.doi.org/10.33696/nanotechnol.5.050.

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The article presents a commentary for the recent publication on nanocrytalline silicon thin films for heterojunction solar (SHJ) cells. The aim of the communication is to highlight some of the important mechanism discussed in the report for improved structure and interface properties which results in better device fill factor and hence enhanced efficiency. Furthermore, the discussion has been extended to present some of the recent literatures which have followed the similar guidelines for material synthesis with improved optical gain in applications of SHJ solar cells.

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Mercaldo, Lucia V., Eugenia Bobeico, Antonella De Maria, et al. "Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiOx Tunnel Junction." Energies 14, no. 22 (2021): 7684. http://dx.doi.org/10.3390/en14227684.

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Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasitic p/n junctions. We investigated monolithic perovskite/silicon-heterojunction (SHJ) tandem solar cells with a p/n nanocrystalline silicon/silicon-oxide recombination junction for improved infrared light management. This design can additionally provide for resilience to shunts and simplified cell pro

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Khokhar, Muhammad Quddamah, Shahzada Qamar Hussain, Sanchari Chowdhury, et al. "Simulated Study and Surface Passivation of Lithium Fluoride-Based Electron Contact for High-Efficiency Silicon Heterojunction Solar Cells." ECS Journal of Solid State Science and Technology 11, no. 1 (2022): 015001. http://dx.doi.org/10.1149/2162-8777/ac3e7e.

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Numerical simulation and experimental techniques were used to investigate lithium fluoride (LiFx) films as an electron extraction layer for the application of silicon heterojunction (SHJ) solar cells, with a focus on the paths toward excellent surface passivation and superior efficiency. The presence of a 7 nm thick hydrogenated intrinsic amorphous silicon (a-Si:H(i)) passivation layer along with thermally evaporated 4 nm thick LiFx resulted in outstanding passivation properties and suppresses the recombination of carriers. As a result, minority carrier lifetime (τ eff) as well as implied open

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Lee, Doowon, Myoungsu Chae, Ibtisam Ahmad, Jong-Ryeol Kim, and Hee-Dong Kim. "Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells." Nanomaterials 13, no. 9 (2023): 1550. http://dx.doi.org/10.3390/nano13091550.

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Antireflection coatings (ARCs) with an indium thin oxide (ITO) layer on silicon heterojunction solar cells (SHJ) have garnered significant attention, which is due to their potential for increasing current density (Jsc) and enhancing reliability. We propose an additional tungsten trioxide (WO3) layer on the ITO/Si structure in this paper in order to raise the Jsc and demonstrate the influence on the SHJ solar cell. First, we simulate the Jsc characteristics for the proposed WO3/ITO/Si structure in order to analyze Jsc depending on the thickness of WO3 using an OPAL 2 simulator. As a result, the

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14

Mazzarella, Luana, Anna Morales-Vilches, Lars Korte, Rutger Schlatmann, and Bernd Stannowski. "Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications." Coatings 10, no. 8 (2020): 759. http://dx.doi.org/10.3390/coatings10080759.

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Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in si

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Elsmani, Mohammed Islam, Noshin Fatima, Ignacio Torres, et al. "Raytracing Modelling of Infrared Light Management Using Molybdenum Disulfide (MoS2) as a Back-Reflector Layer in a Silicon Heterojunction Solar Cell (SHJ)." Materials 15, no. 14 (2022): 5024. http://dx.doi.org/10.3390/ma15145024.

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The silicon heterojunction solar cell (SHJ) is considered the dominant state-of-the-art silicon solar cell technology due to its excellent passivation quality and high efficiency. However, SHJ’s light management performance is limited by its narrow optical absorption in long-wave near-infrared (NIR) due to the front, and back tin-doped indium oxide (ITO) layer’s free carrier absorption and reflection losses. Despite the light-trapping efficiency (LTE) schemes adopted by SHJ in terms of back surface texturing, the previous investigations highlighted the ITO layer as a reason for an essential lo

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Alkharasani, Wabel Mohammed, Nowshad Amin, Seyed Ahmad Shahahmadi, et al. "A Comparative Study on p- and n-Type Silicon Heterojunction Solar Cells by AFORS-HET." Materials 15, no. 10 (2022): 3508. http://dx.doi.org/10.3390/ma15103508.

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Despite the increasing trend of n-type silicon wafer utilization in the manufacturing of high-efficiency heterojunction solar cells due to the superior advantages over p-type counterparts, its high manufacturing cost remains to be one of the most crucial factors, which impedes its market share growth with state-of-the-art silicon heterojunction (SHJ) solar cells demonstrating high conversion efficiencies from various configurations, the prospect of using an n-type wafer is debatable from a cost-efficiency point of view. Hence, a systematic comparison between p- and n-type SHJ solar cells was e

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Chavan, Ganesh T., Youngkuk Kim, Muhammad Quddamah Khokhar, et al. "A Brief Review of Transparent Conducting Oxides (TCO): The Influence of Different Deposition Techniques on the Efficiency of Solar Cells." Nanomaterials 13, no. 7 (2023): 1226. http://dx.doi.org/10.3390/nano13071226.

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Global-warming-induced climate changes and socioeconomic issues increasingly stimulate reviews of renewable energy. Among energy-generation devices, solar cells are often considered as renewable sources of energy. Lately, transparent conducting oxides (TCOs) are playing a significant role as back/front contact electrodes in silicon heterojunction solar cells (SHJ SCs). In particular, the optimized Sn-doped In2O3 (ITO) has served as a capable TCO material to improve the efficiency of SHJ SCs, due to excellent physicochemical properties such as high transmittance, electrical conductivity, mobili

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Chen, Ping-Hang, Wen-Jauh Chen, and Jiun-Yi Tseng. "Thermal Stability of the Copper and the AZO Layer on Textured Silicon." Coatings 11, no. 12 (2021): 1546. http://dx.doi.org/10.3390/coatings11121546.

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Transparent conductive oxide (TCO) film is the most widely used front electrode in silicon heterojunction (SHJ) solar cells. A copper metallization scheme can be applied to the SHJ process. The abundance of zinc in the earth’s crust makes aluminum-doped zinc oxide (AZO) an attractive low-cost substitute for indium-based TCOs. No work has focused on the properties of the copper and AZO layers on the textured silicon for solar cells. This work deposited an aluminum-doped zinc oxide layer and copper metal layer on textured (001) silicon by a sputtering to form Cu/AZO/Si stacks. The structures of

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Gatz, Henriette A., Yinghuan Kuang, Marcel A. Verheijen, Jatin K. Rath, Wilhelmus M. M. (Erwin) Kessels, and Ruud E. I. Schropp. "p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD." MRS Proceedings 1770 (2015): 7–12. http://dx.doi.org/10.1557/opl.2015.552.

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ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor d

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Meza, Daniel, Alexandros Cruz, Anna Morales-Vilches, Lars Korte, and Bernd Stannowski. "Aluminum-Doped Zinc Oxide as Front Electrode for Rear Emitter Silicon Heterojunction Solar Cells with High Efficiency." Applied Sciences 9, no. 5 (2019): 862. http://dx.doi.org/10.3390/app9050862.

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Transparent conductive oxide (TCO) layers of aluminum-doped zinc oxide (ZnO:Al) were investigated as a potential replacement of indium tin oxide (ITO) for the front contact in silicon heterojunction (SHJ) solar cells in the rear emitter configuration. It was found that ZnO:Al can be tuned to yield cell performance almost at the same level as ITO with a power conversion efficiency of 22.6% and 22.8%, respectively. The main reason for the slight underperformance of ZnO:Al compared to ITO was found to be a higher contact resistivity between this material and the silver grid on the front side. An

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Seyhan, Ayşe, and Emre Kartal. "Optical, Electrical and Structural Properties of ITO/IZO and IZO/ITO Multilayer Transparent Conductive Oxide Films Deposited via Radiofrequency Magnetron Sputtering." Coatings 13, no. 10 (2023): 1719. http://dx.doi.org/10.3390/coatings13101719.

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In this study, we investigated the potential of multilayer TCO structures, specifically those made up of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), for crystalline silicon heterojunction solar cells (SHJ). We used the radiofrequency (RF) magnetron sputtering method to deposit various thin-film structures under various deposition temperatures and evaluated their electrical, optical, and morphological properties. The objective was to obtain films with lower sheet resistances and higher transmittances than those of single-layer thin films. Our results show that the ITO/IZO/ITO/IZO/ITO mu

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Lee, Sunhwa, Duy Phong Pham, Youngkuk Kim, Eun-Chel Cho, Jinjoo Park, and Junsin Yi. "Influence of the Carrier Selective Front Contact Layer and Defect State of a-Si:H/c-Si Interface on the Rear Emitter Silicon Heterojunction Solar Cells." Energies 13, no. 11 (2020): 2948. http://dx.doi.org/10.3390/en13112948.

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In this research, simulations were performed to investigate the effects of carrier selective front contact (CSFC) layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface in silicon heterojunction (SHJ) solar cells employing the Automat for Simulation of hetero-structure (AFORS-HET) simulation program. The results demonstrated the effects of band offset determined by band bending at the interface of the CSFC layer/passivation layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling e

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Bobeico, Eugenia, Lucia V. Mercaldo, Pasquale Morvillo, et al. "Evaporated MoOx as General Back-Side Hole Collector for Solar Cells." Coatings 10, no. 8 (2020): 763. http://dx.doi.org/10.3390/coatings10080763.

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Substoichiometric molybdenum oxide (MoOx) has good potential as a hole-collecting layer in solar cells. In this paper, we report on the application of ultrathin evaporated MoOx as a hole collector at the back side of two distinct photovoltaic technologies: polymeric and silicon heterojunction (SHJ). In the case of polymer solar cells, we test MoOx as a hole transport layer in devices with inverted architecture. The higher transparency of the MoOx film, compared to the commonly used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), allows an enhanced back reflected light into

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Hossain, Md Momin, Md Yakub Ali Khan, Md Abdul Halim, Nafisa Sultana Elme, and Md Nayeem Hussain. "A Review on Stability Challenges and Probable Solution of Perovskite–Silicon Tandem Solar Cells." Signal and Image Processing Letters 5, no. 1 (2023): 62–71. http://dx.doi.org/10.31763/simple.v5i1.58.

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Perovskite-silicon tandem solar cells have shown great potential in increasing the efficiency of solar cells, with efficiencies reaching as high as 25%. However, the stability of these cells remains a major challenge that must be addressed before they can be commercialized. This review focuses on the stability challenges of perovskite-silicon tandem solar cells and possible solutions to address these challenges. The main stability issues include the instability of the perovskite layer, the degradation of the silicon layer, and the failure of the interfaces between the layers. One solution is t

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Pan, Guangyou, Jianhui Chen, Kunpeng Ge, et al. "Zn(O,S)-based electron-selective contacts with tunable band structure for silicon heterojunction solar cells." Journal of Materials Chemistry C 7, no. 15 (2019): 4449–58. http://dx.doi.org/10.1039/c9tc00494g.

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Liu, Ming, Lei Wang, Wenqi Zhao, et al. "Sustainable Valuable Materials from Waste Heterojunction Solar Cells: A Focus on the Purification of Indium." Sustainability 17, no. 4 (2025): 1460. https://doi.org/10.3390/su17041460.

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The expansion of silicon heterojunction (SHJ) solar cell production has prompted concerns regarding the rising consumption of indium. To address the issue of indium scarcity, the use of benign hydrometallurgical conditions for the recovery of indium—a rare noble metal—from the transparent conductive oxide (TCO) layer of the cells was investigated. The results showed that due to the insufficient adhesion between the silver fingers and the TCO layer, the complete recovery of the silver fingers could be accomplished without damaging the cell by the etching process involving 10% NaOH at 90 °C for

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Sun, Zhaoqing, Qian Kang, Jingjie Li, et al. "Evaluating the Practical Efficiency Limit of Silicon Heterojunction–Interdigitated Back Contact Solar Cells by Creating Digital Twins of Silicon Heterojunction Solar Cells with Amorphous Silicon and Nanocrystalline Silicon Hole Contact Layers." physica status solidi (a), February 8, 2024. http://dx.doi.org/10.1002/pssa.202300758.

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Improving power conversion efficiency (PCE) in photovoltaics has driven innovative approaches in solar cell design and technology. Silicon heterojunction (SHJ) solar cells exhibit advantages in PCE due to their effective passivating contact structures. SHJ–interdigitated back contact (SHJ–IBC) solar cells have the potential to surpass traditional SHJ cells, attributed to their advantage in short‐circuit current (JSC). Herein, Silvaco Atlas technology computer‐aided design is used to create digital twins of high‐efficiency SHJ solar cells with amorphous silicon and nanocrystalline silicon hole

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Lu, Meijun, Stuart Bowden, Ujjwal Das, Michael Burrows, and Robert Birkmire. "Interdigitated Back Contact Silicon Heterojunction (IBC-SHJ) Solar Cell." MRS Proceedings 989 (2007). http://dx.doi.org/10.1557/proc-0989-a24-05.

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AbstractInterdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have been developed. This structure has interdigitated p/n amorphous silicon (a-Si:H) films deposited by plasma enhanced chemical vapor deposition (PECVD) on the backside of crystalline silicon (c-Si) wafers, with light irradiating the front surface. IBC-SHJ cells possess advantages over front junction a-Si:H/c-Si heterojunction cells due to minimized current losses in the illuminating side, and over traditional diffused back-junction cells due to low temperature processing combined with the potential of high volt

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Liang, Bingquan, Xinliang Chen, Xiaofeng Wang, et al. "Progress in crystalline silicon heterojunction solar cells." Journal of Materials Chemistry A, 2025. https://doi.org/10.1039/d4ta06224h.

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At present, the global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) solar cell technology, and silicon heterojunction solar (SHJ) cells have been developed rapidly after the concept was...

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Smits, Sebastian, Yifeng Zhao, Paul Procel Moya, Luana Mazzarella, and Olindo Isabella. "Silicon Heterojunction Solar Cells Featuring Localized Front Contacts." Solar RRL, February 5, 2025. https://doi.org/10.1002/solr.202400898.

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Throughout the development of silicon heterojunction (SHJ) solar cells, the transparent conductive oxide has been regarded as an essential component of their front electrode, facilitating lateral charge transport of photogenerated carriers toward the front metal grid fingers. In rear junction (RJ)‐SHJ solar cells, the (n)c‐Si bulk is known to support the lateral electron transport at maximum power point injection level, provided that the contact resistance of the front contact stack is sufficiently low. This enables experimental RJ‐SHJ solar cell architectures featuring a localized front carri

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Li, Xiaodong, Yunjie Xiong, Yuhao Yang, et al. "Intensive light soaking improves electricity generation of silicon heterojunction solar cells by anomalous Staebler–Wronski effect." Applied Physics Express, August 5, 2022. http://dx.doi.org/10.35848/1882-0786/ac8784.

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Abstract Silicon heterojunction (SHJ) solar cell is usually considered to be a good choice for power plants owing to its high power-conversion efficiency. A recent work reports light soaking can activate boron doping in hydrogenated amorphous silicon (a-Si:H), improving efficiency of SHJ solar cells. Here we further show high light intensity can boost dark conductivity of the phosphorus-doped a-Si:H and the boron- doped a-Si:H, this has significant implication, i.e, SHJ panels can generate more power than expectation, especially for bifacial SHJ solar panels illuminated by intensive light soak

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Wang, Qi, Matt R. Page, Eugene Iwancizko, et al. "High Open-Circuit Voltage in Silicon Heterojunction Solar Cells." MRS Proceedings 989 (2007). http://dx.doi.org/10.1557/proc-0989-a03-04.

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AbstractHigh open-circuit voltage (Voc) silicon heterojunction (SHJ) solar cells are fabricated in double-heterojunction a-Si:H/c-Si/a-Si:H structures using low temperature (<225°C) hydrogenated amorphous silicon (a-Si:H) contacts deposited by hot-wire chemical vapor deposition (HWCVD). On p-type c-Si float-zone wafers, we used an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain a Voc of 667 mV in a 1 cm2 cell with an efficiency of 18.2%. This is the best reported p-type SHJ voltage. In our labs, it improves over the 652 mV cell obtained with a front

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Mousumi, Jannatul Ferdous, Yahya Bougdid, Gunjan Kulkarni, et al. "Laser‐Sintered Silver Metallization for Silicon Heterojunction Photovoltaic Cells." Solar RRL, October 17, 2024. http://dx.doi.org/10.1002/solr.202400527.

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Herein, a novel metallization technique is reported for crystalline silicon heterojunction (SHJ) solar cells in which silver (Ag) fingers are printed on the SHJ substrates by dispensing Ag nanoparticle‐based inks through a needle and then sintered with a continuous‐wave carbon dioxide (CO2) laser. The impact of the Ag ink viscosity on the line quality and the line resistance is investigated on three Ag inks with different viscosities. Increasing ink viscosity yields higher Ag contact heights, larger aspect ratios, and lower line resistance values. The Ag line height increases from less than a

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Guo, Jiacheng, Shuhan Li, Yuhan Cui, et al. "Low‐Cost Tin Oxide Transparent Conductive Films for Silicon Heterojunction Solar Cells." Advanced Functional Materials, August 25, 2024. http://dx.doi.org/10.1002/adfm.202407273.

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AbstractIndium‐based transparent conductive oxide (TCO) films are widely used in various photoelectric devices including silicon heterojunction (SHJ) solar cells. However, high cost of indium‐based TCO films is not conducive to mass production of the SHJ solar cells. A variety of indium‐free or indium‐less TCOs are explored and utilized presently. Here, SnOx films are deposited by reactive plasma deposition (RPD) with metal tin as the evaporation source. The metal‐reaction deposited SnOx films feature low resistivity (<2 × 10−3 Ω cm), high mobility (35.93 cm2 V−1 S−1), and wide optical band

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Wang, Qi, Matt P. Page, Eugene Iwancizko, et al. "17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers." MRS Proceedings 910 (2006). http://dx.doi.org/10.1557/proc-0910-a26-05.

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AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textur

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Liu, Wenzhu, Jianhua Shi, Liping Zhang, et al. "Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells." Nature Energy, May 12, 2022. http://dx.doi.org/10.1038/s41560-022-01018-5.

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AbstractRecent achievements in amorphous/crystalline silicon heterojunction (SHJ) solar cells and perovskite/SHJ tandem solar cells place hydrogenated amorphous silicon (a-Si:H) at the forefront of photovoltaics. Due to the extremely low effective doping efficiency of trivalent boron in amorphous tetravalent silicon, light harvesting of aforementioned devices is limited by their fill factors (FFs), a direct metric of the charge carrier transport. It is challenging but crucial to develop highly conductive doped a-Si:H with minimal FF losses. Here we report that light soaking can efficiently boo

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Steinmetz, Anamaria, Johannes Seif, Ibrahim Koc, et al. "Nanocrystalline Silicon Layers for the Application in Silicon Heterojunction Solar Cells." SiliconPV Conference Proceedings 1 (February 27, 2024). http://dx.doi.org/10.52825/siliconpv.v1i.959.

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After application in thin-film silicon tandem solar cells and in lab-scale silicon heterojunction (SHJ) devices, doped nanocrystalline silicon (nc) layers now arrived on the industrial stage. Despite their challenging deposition, the benefits they hold with respect to even higher device performance compared to their amorphous counterparts are significant and justify additional effort. In this contribution we report on developments towards industrially applicable processes for n- and p-doped silicon layers, nc-Si(n) and nc-Si(p), and their implementation in SHJ cells. Our investigation focuses

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Spaans, Erik M., Selvaraj Venkataraj, Armin G. Aberle, and Nitin Nampalli. "Practical Jsc Limits for SHJ Devices: Insights From Modelling." SiliconPV Conference Proceedings 1 (February 22, 2024). http://dx.doi.org/10.52825/siliconpv.v1i.943.

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Modern industrial silicon heterojunction (SHJ) solar cells are increasingly limited by the short-circuit current density (Jsc) and there is a strong interest in understanding how much novel approaches such as window layers, novel transparent conductive oxides (TCOs) and anti-reflection coatings (ARCs) could improve the Jsc of SHJ solar cells. In this work, the practical Jsc limits of SHJ solar cells are determined using a carefully calibrated ray-tracing model, validated using empirical data from in-house solar cells as well as recently published high-efficiency front-and-back contacted (FAB)

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Aida, Maha Nur, Polgampola Chamani Madara, Muhammad Quddamah Khokhar, et al. "Improving Solar Cell Efficiency of Silicon and Silicon Tandem Structure by Using Surface Modification." Energy Technology, November 17, 2024. http://dx.doi.org/10.1002/ente.202401514.

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Silicon heterojunction (SHJ) solar cells face challenges in maximizing energy capture due to limitations in light collection and surface passivation. To address this, the use of SHJ tandem solar cells in a back‐to‐back configuration is explored, allowing illumination from both sides to enhance light absorption and energy generation. This study aims to improve the stability and efficiency of these cells through Al2O3 and Nafion surface treatments. Al2O3 is deposited to enhance bifacial light collection, while Nafion is applied for surface passivation to increase the fill factor (FF). The method

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Zeng, Yulian, Shuai Zou, Zhenzhen Chen, et al. "Tetradecahedral Cu@Ag Core-Shell Powder with High Solid-State Dewetting and Oxidation Resistance for Low-temperature Conductive Paste." Journal of Materials Chemistry A, 2024. http://dx.doi.org/10.1039/d3ta06483b.

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Martinez-Szewczyk, Michael W., Steven DiGregorio, Owen Hildreth, and Mariana Bertoni. "Reactive Silver Inks: A Path to Solar Cells with 82% less Silver." Energy & Environmental Science, 2024. http://dx.doi.org/10.1039/d4ee00020j.

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Silicon heterojunction (SHJ) cells currently hold the efficiency record for (c-Si) based devices of 27.09% and continue to show a promising pathway towards the practical limit of 28.5%. The efficiencies...

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Hao, Bin, Yimeng Song, Conghui Jiang, et al. "Comparing single-, double- and triple-layer anti-reflection coatings for ultra-low reflectance in silicon heterojunction solar cells." Japanese Journal of Applied Physics, May 22, 2023. http://dx.doi.org/10.35848/1347-4065/acd7b7.

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Abstract To increase the efficiency of silicon heterojunction (SHJ) solar cells (SCs), it is paramount to enhance the utilization of sunlight by light management. In this study, the dependences of weighted reflectance and thus generation current (JG) for SHJ SCs on different anti-reflective structures are displayed by OPAL2 simulation tool. According to this, SiNx and SiO2 films are deposited on front of Indium tin oxide (ITO) as multilayer anti-reflection coatings (ARC). It is demonstrated experimentally that the photovoltaic performance of SHJ solar cells can be significantly improved by mul

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Chen, Shuyi, Jianhua Shi, Yuan Yao, et al. "Tantalum‐Doped Tin Oxide Rear Reflector for Efficient and Low‐Cost Silicon Heterojunction Solar Cells." Solar RRL, February 13, 2025. https://doi.org/10.1002/solr.202400806.

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Promoting infrared (IR) response is crucial to boost the short‐circuit current density (JSC) of thinner silicon heterojunction (SHJ) solar cells. Herein, tantalum‐doped tin oxide (TaTO) film is not only a transparent conductive film but also used as rear reflector stacked with multiple‐doped indium oxide (IMO) to promote the IR quantum efficiency of SHJ solar cells. Stack films (IMO/TaTO) are prepared and their structural and optical–electrical properties were studied. IMO/TaTO stack film is a layer of polycrystalline IMO film covered by amorphous TaTO film. Given the low surface roughness of

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Lin, Hao, Miao Yang, Xiaoning Ru, et al. "Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers." Nature Energy, May 4, 2023. http://dx.doi.org/10.1038/s41560-023-01255-2.

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AbstractSilicon heterojunction (SHJ) solar cells have reached high power conversion efficiency owing to their effective passivating contact structures. Improvements in the optoelectronic properties of these contacts can enable higher device efficiency, thus further consolidating the commercial potential of SHJ technology. Here we increase the efficiency of back junction SHJ solar cells with improved back contacts consisting of p-type doped nanocrystalline silicon and a transparent conductive oxide with a low sheet resistance. The electrical properties of the hole-selective contact are analysed

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Zerbo, F., M. Modreanu, I. Povey, et al. "Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics." June 9, 2023. https://doi.org/10.3390/cryst12101363.

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Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS<sub>2</sub>)/c-silicon heterojunction solar cells, consisting of a preliminary study of the MoS<sub>2</sub> material and numerical device simulations of MoS<sub>2</sub>/Si heterojunction solar cells, using SILVACO ATLAS. Through the optical and structural characterization of MoS<sub>2</sub>/SiO<sub>2</sub>/Si samples, we found a significant sensit

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Mercaldo, Lucia V., Eugenia Bobeico, Maria Antonella De, et al. "Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiOx Tunnel Junction." November 17, 2021. https://doi.org/10.3390/en14227684.

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Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasitic p/n junctions. We investigated monolithic perovskite/silicon-heterojunction (SHJ) tandem solar cells with a p/n nanocrystalline silicon/silicon-oxide recombination junction for improved infrared light management. This design can additionally provide for resilience to shunts and simplified cell pro

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Huang, Shenglei, Yuhao Yang, Junjun Li, et al. "Dipoles and defects caused by CO₂ plasma improve carrier transport of silicon solar cells." Progress in Photovoltaics: Research and Applications, December 19, 2023. http://dx.doi.org/10.1002/pip.3761.

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AbstractCarrier‐selective contact is a fundamental issue for solar cells. For silicon heterojunction (SHJ) solar cells, it is important to improve hole transport because of the low doping efficiency of boron in amorphous silicon and the barrier stemming from valence band offset. Here, we develop a carbon dioxide (CO2) plasma treatment (PT) process to form dipoles and defect states. We find a dipole moment caused by longitudinal distribution of H and O atoms. It improves hole transport and blocks electron transport and thus suppresses carrier recombination. In the meantime, the CO2 PT process a

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Qiu, Depeng, Andreas Lambertz, Weiyuan Duan, et al. "A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices." Advanced Science, July 18, 2024. http://dx.doi.org/10.1002/advs.202403728.

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AbstractDue to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc‐SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc‐SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructu

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Gudovskikh, Alexander, Artem Baranov, Alexander V. Uvarov, et al. "Interface properties study of black silicon solar cells with front surface a-Si:H/c-Si heterojunction." Journal of Physics D: Applied Physics, October 23, 2024. http://dx.doi.org/10.1088/1361-6463/ad8a6d.

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Abstract The exceptionally low reflectance of black silicon across a broad wavelength range makes it an intriguing surface texture for solar cell applications. Silicon heterojunction (SHJ) solar cells fabricated on black silicon (Si) formed by dry reactive ion etching (RIE) using inductive coupled plasma (ICP) on n-type Si are explored. The study is focused on the properties of the a-Si:H/c-Si interface, being a key issue for the photovoltaic performance of SHJ. Deep-level transient spectroscopy (DLTS) detected no radiation defect in Si after the etching. The surface of black Si was passivated

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Su, Qiao, Hao Lin, Genshun Wang, et al. "Theoretical limiting‐efficiency assessment on advanced crystalline silicon solar cells with Auger ideality factor and wafer thickness modifications." Progress in Photovoltaics: Research and Applications, March 5, 2024. http://dx.doi.org/10.1002/pip.3790.

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AbstractWith the improvement of surface passivation, bulk recombination is becoming an indispensable and decisive factor to assess the theoretical limiting efficiency () of crystalline silicon (c‐Si) solar cells. In simultaneous consideration of surface and bulk recombination, a modified model of evaluation is developed. Surface recombination is directly depicted with contact selectivity while bulk recombination is revised on the aspects of ideality factor and wafer thickness. The of the double‐side silicon heterojunction (SHJ) and double‐side tunneling‐oxide passivating contact (TOPCon) solar

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