Journal articles: 'Silicon machining'

1

Tönshoff, H. K., W. v. Schmieden, I. Inasaki, W. König, and G. Spur. "Abrasive Machining of Silicon." CIRP Annals 39, no. 2 (1990): 621–35. http://dx.doi.org/10.1016/s0007-8506(07)62999-0.

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2

Wilson, Paul. "Tutorial: silicon micro‐machining." Sensor Review 10, no. 4 (April 1990): 178–81. http://dx.doi.org/10.1108/eb007830.

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Sreejith, P. S. "Machining force studies on ductile machining of silicon nitride." Journal of Materials Processing Technology 169, no. 3 (December 2005): 414–17. http://dx.doi.org/10.1016/j.jmatprotec.2005.04.092.

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Makarov, V. F., K. R. Muratov, T. R. Ablyaz, E. A. Gashev, D. M. Lagunov, and N. V. Varlamov. "Precision Machining of Silicon Substrates." IOP Conference Series: Materials Science and Engineering 498 (April 16, 2019): 012009. http://dx.doi.org/10.1088/1757-899x/498/1/012009.

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5

Yu, Po Huai, Jung Chou Hung, Hsin Min Lee, Kun Ling Wu, and Biing Hwa Yan. "Machining Characteristics of Magnetic Force-Assisted Electrolytic Machining for Polycrystalline Silicon." Advanced Materials Research 325 (August 2011): 523–29. http://dx.doi.org/10.4028/www.scientific.net/amr.325.523.

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Wire electrical discharge machining (WEDM) of polycrystalline silicon (polysilicon) involves high-temperature melting that easily produces cracks on the silicon surface. This paper studies improvements of cracks and craters on surface of polysilicon after wire electrical discharge machining (WEDM) by magnetic force-assisted electrolytic machining (MFA-EM). The effects of different MFA-EM parameters on material removal and surface roughness are explored to understand the machining characteristics of MFA-EM and how magnetic field assistance contributes to high-efficiency and high-quality machining. Experimental results show that compared with standard EM, MFA-EM can achieve better machining efficiency and surface quality because MFA-EM can effectively enhance electrolyte circulation and replenishment, which contributes to better machining stability.

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Broniszewski, Kamil, Jarosław Woźniak, Mateusz Petrus, Kazimierz Czechowski, Lucyna Jaworska, and Andrzej Olszyna. "Silicon nitride – molybdenum cutting tools for the cast iron machining." Mechanik, no. 2 (February 2015): 126/167–126/175. http://dx.doi.org/10.17814/mechanik.2015.2.85.

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Yu, Po-Huai, Hsiang-Kuo Lee, Yang-Xin Lin, Shi-Jie Qin, Biing-Hwa Yan, and Fuang-Yuan Huang. "Machining Characteristics of Polycrystalline Silicon by Wire Electrical Discharge Machining." Materials and Manufacturing Processes 26, no. 12 (December 2011): 1443–50. http://dx.doi.org/10.1080/10426914.2010.544808.

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Han, Jide, Lihua Li, and Wingbun Lee. "Machining of Lenticular Lens Silicon Molds with a Combination of Laser Ablation and Diamond Cutting." Micromachines 10, no. 4 (April 16, 2019): 250. http://dx.doi.org/10.3390/mi10040250.

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Lenticular lenses are widely used in the three-dimensional display industry. Conventional lenticular lens components are made of plastics that have low thermal stability. An alternative is to use glass to replace plastic as the lenticular lens component material. Single crystal silicon is often used as the mold material in the precision glass molding process. It is, however, difficult to fabricate a lenticular lens silicon mold that has a large feature size compared to the critical depth of cut of silicon. In order to solve the problems of machining lenticular lens silicon molds using the conventional diamond cutting method, such as low machining efficiency and severe tool wear, a hybrid machining method that combined laser ablation and diamond cutting was proposed. A feasibility study was performed to investigate the possibility of using this method to fabricate a lenticular lens silicon mold. The influence of the laser parameters and machining parameters on the machining performance was investigated systematically. The experimental results indicated that this hybrid machining method could be a possible method for manufacturing lenticular lens silicon molds or other similar microstructures.

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ZHANG, Zhiyu, Jiwang YAN, and Tsunemoto KURIYAGAWA. "C21 Wear Mechanism of Diamond Tools in Ductile Machining of Reaction-bonded Silicon Carbide(Ultra-precision machining)." Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21 2009.5 (2009): 425–30. http://dx.doi.org/10.1299/jsmelem.2009.5.425.

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Yamamoto, Norimasa, Satarou Yamaguchi, and Tomohisa Kato. "Effects of Machining Fluid on Electric Discharge Machining of SiC Ingot." Materials Science Forum 778-780 (February 2014): 767–70. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.767.

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Recently, ingots of silicon carbide have been adapted to be sliced by the wire-cut electrical discharge machining. Fast slicing, and the reduction in the loss are important for slicing of the wafer. In this paper, characteristic features of the electric discharge machining in the ion-exchange water and the fluorine-based fluid were compared for these improvement. The discharge was caused by a pulse voltage applied to a ingot of silicon carbide and the wire in machining fluid, and the slicing was proceeded. As a result, improvement of surface roughness and kerf loss was confirmed, for the first time. In addition, the improving methods for fast slicing were considered.

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Biermann, Dirk, T. Jansen, and M. Feldhoff. "Machining of Carbon Fibre-Reinforced Silicon-Ccarbide Composites." Advanced Materials Research 59 (December 2008): 51–54. http://dx.doi.org/10.4028/www.scientific.net/amr.59.51.

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A growing demand for fibre-reinforced ceramics necessitates effective ways for machining these materials. In this paper, different tool concepts are presented for an efficient machining of carbon fibre-reinforced silicon carbide. Drill hole machining, slot machining and first investigations of free-form surface machining are presented.

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Hung, N. P., Y. Q. Fu, and M. Y. Ali. "Focused ion beam machining of silicon." Journal of Materials Processing Technology 127, no. 2 (September 2002): 256–60. http://dx.doi.org/10.1016/s0924-0136(02)00153-x.

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13

Uhlmann, Eckart, Karsten Flögel, Fiona Sammler, Iris Rieck, and Arne Dethlefs. "Machining of Hypereutectic Aluminum Silicon Alloys." Procedia CIRP 14 (2014): 223–28. http://dx.doi.org/10.1016/j.procir.2014.03.069.

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14

Inamura, T., S. Shimada, N. Takezawa, and N. Ikawa. "Crack Initiation in Machining Monocrystalline Silicon." CIRP Annals 48, no. 1 (1999): 81–84. http://dx.doi.org/10.1016/s0007-8506(07)63136-9.

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15

Rasheed, Bassam G., and Mohammed A. Ibrahem. "Laser micro/nano machining of silicon." Micron 140 (January 2021): 102958. http://dx.doi.org/10.1016/j.micron.2020.102958.

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WALLACE, RUSSELL J., and STEPHEN M. COPLEY. "Laser Machining of Silicon Nitride: Energetics." Advanced Ceramic Materials 1, no. 3 (July 1986): 277–83. http://dx.doi.org/10.1111/j.1551-2916.1986.tb00029.x.

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17

Reynaerts, Dominiek, Wim Meeusen, and Hendrik Van Brussel. "Machining of three-dimensional microstructures in silicon by electro-discharge machining." Sensors and Actuators A: Physical 67, no. 1-3 (May 1998): 159–65. http://dx.doi.org/10.1016/s0924-4247(97)01724-x.

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18

Wu, Hui, Bin Lin, S. Y. Yu, and Hong Tao Zhu. "Molecular Dynamics Simulation on the Mechanism of Nanometric Machining of Single-Crystal Silicon." Materials Science Forum 471-472 (December 2004): 144–48. http://dx.doi.org/10.4028/www.scientific.net/msf.471-472.144.

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Molecular dynamics (MD) simulation can play a significant role in addressing a number of machining problems at the atomic scale. This simulation, unlike other simulation techniques, can provide new data and insights on nanometric machining; which cannot be obtained readily in any other theory or experiment. In this paper, some fundamental problems of mechanism are investigated in the nanometric cutting with the aid of molecular dynamics simulation, and the single-crystal silicon is chosen as the material. The study showed that the purely elastic deformation took place in a very narrow range in the initial stage of process of nanometric cutting. Shortly after that, dislocation appeared. And then, amorphous silicon came into being under high hydrostatic pressure. Significant change of volume of silicon specimen is observed, and it is considered that the change occur attribute to phase transition from a diamond silicon to a body-centered tetragonal silicon. The study also indicated that the temperature distributing of silicon in nanometric machining exhibited similarity to conventional machining.

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Li, Wei, Xiao Dong Hu, Yang Fu Jin, Gang Xiang Hu, and Xiao Zhen Hu. "A Study of Double Sided Polishing Process for Ultra-Smooth Surface of Silicon Wafer." Materials Science Forum 532-533 (December 2006): 472–75. http://dx.doi.org/10.4028/www.scientific.net/msf.532-533.472.

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Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions. In this paper, the mechanism of ultra-smooth surface machining process was studied, the main parameters affecting the surface quality of silicon wafer, such as the polishing pad and carrier rotation speed, polishing press, polishing slurries etc. , were discussed and optimized, then ultra-smooth surface of silicon wafer with Ra 0.4nm has been obtained based on the above study. A new double sided polishing machine with computer control system equipped with a digital controlled press valve was developed, and the ultra-smooth machining process of silicon wafer was established in this paper.

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20

Sha, Zhi Hua, Shao Xing Zhang, Yi Wang, and Sheng Fang Zhang. "Stick-Slip Simulation of Feeding System in Silicon Ultra-Precision Grinding Machine." Advanced Materials Research 566 (September 2012): 530–33. http://dx.doi.org/10.4028/www.scientific.net/amr.566.530.

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Mono-crystalline silicon is the typical substrate material in integrated circuits manufacturing, and machining precision and surface quality of the silicon wafer impacts on the quality and performance of the electronic products directly. Silicon grinding technology has high accuracy, low cost and can obtained high surface quality, which has become the mainstream of silicon ultra-precision machining. Stick-slip of feeding system in silicon ultra-precision grinding machine is an important factor which influencing the machining precision of the silicon wafer. In this paper, based on the structure analysis of feeding system in a certain type of silicon ultra-precision grinding machine, the rigid body coupling virtual prototype model of the feeding system is established using ADAMS, the factors which influencing the stick-slip is analyzed deeply via the dynamic simulation of the virtual prototype.

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21

Saboktakin Rizi, Mohsen, Gholam Reza Razavi, Mojtaba Ostadmohamadi, and Ali Reza Havaie. "Optimization Electro Discharge Machining of Ti-6Al-4V Alloy with Silicon Carbide Powder Mixed." Advanced Materials Research 566 (September 2012): 466–69. http://dx.doi.org/10.4028/www.scientific.net/amr.566.466.

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The Ti-6Al-4V alloy is the most important and widely used titanium alloy which enjoys the welding, forging and machining capabilities. However brittle at high temperatures and low thermal conductivity caused restrictions to deformation and machining of this alloy. So advanced methods machining such as Electrical discharge machining has been developed for titanium and its alloys. One of the ways to improve the performance of electrical discharge machining method is to add the powder to the dielectric. Depending on the type of powder used the different results are achieved. In this study the effect of silicon carbide powder on electrical discharge machining of titanium alloys has been studied. Results suggest that the addition of silicon carbide powder in an electric discharge machining method reduces the roughness and rate filings will be taken. The experimental results showed that the addition of silicon carbide powder will have a positive effect on reducing corrosion of the electrode.

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22

Nowakowski, Andrzej, Piotr Putyra, and Tadeusz Krzywda. "Electrodischarge machining of silicon nitride composites and silicon carbide composites." Mechanik 92, no. 2 (February 11, 2019): 115–18. http://dx.doi.org/10.17814/mechanik.2019.2.19.

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The paper presents the results of physical and mechanical properties of the and Si3N4 and SiC matrix ceramics with additives of good electrical conductivity carbides, nitrides and borides phases. The density, Young’s modulus, hardness HV1 and electrical conductivity of each material were investigated. Ceramic composite materials with the participation of the conductive phases have been produced using SPS (spark plasma sintering) method. Materials characterized by good electrical conductivity were shaped using EDM (electro discharge machining) method.

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23

Yaou, Zhang, Han Ning, Kang Xiaoming, Zhao Wansheng, and Xu Kaixian. "Experimental study of an electrostatic field–induced electrolyte jet electrical discharge machining process." Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture 231, no. 10 (October 24, 2015): 1752–59. http://dx.doi.org/10.1177/0954405415612327.

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In this study, a new electrostatic field–induced electrolyte jet electrical discharge machining method has been proposed, which can automatically generate the tool electrode. Then, a series of experiments have been carried out to reveal the machining mechanism and test the machining ability of this method. The continuous observation experiments and the online current detection experiments have demonstrated that the electrolyte jet discharge machining is a pulsing, dynamic and cyclic process. Moreover, the 20-min time long reverse polarity experiments on the silicon surface have revealed that the machining is an electrical discharge machining process during the negative polarity machining; however, in the positive polarity machining, it is a hybrid electrical discharge machining and electrochemical machining process. Furthermore, the craters as small as 2 µm in diameter on stainless steel and silicon are produced by this electrolyte jet electrical discharge machining, which has proved the micro-machining ability of this method.

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Amin, A. K. M. Nurul, Mohd Dali M. Ismail, Muhammad Iqbal Musa, and Anayet Ullah Patwari. "Prediction and Investigation of Surface Quality in High Speed End-Milling of Silicon to Eliminate Conventional Finishing Operations." Advanced Materials Research 418-420 (December 2011): 1237–41. http://dx.doi.org/10.4028/www.scientific.net/amr.418-420.1237.

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Surface finish and dimensional accuracy are two of the most important requirements in machining process. High speed machining (HSM) is capable of producing parts that require little or no grinding/lapping operations within the required machining tolerances. In HSM determination of the optimum combination of cutting parameters for achieving the required level of quality, such as, minimum possible surface roughness and maximum tool life is a very important task. Silicon is conventionally finished using grinding followed by polishing and lapping to achieve required surface finish and surface integrity. In this study small diameter tools are used to achieve high rpm to facilitate the application of low values of feed and depths of cut to ensure high surface roughness values through achievement of ductile mode machining of silicon. Investigations on the effect cutting parameters of high speed end milling on surface finish and integrity of silicon has been conducted to minimizing the amount of finishing requirement in machining of silicon, with the objective of reducing cost and increasing effectiveness of silicon manufacturing process. In this work statistical models were developed using the capabilities of Response Surface Methodology (RSM) to predict the surface roughness in high speed flat end milling of silicon under dry cutting conditions.

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Amin, A. K. M. Nurul, Noor Syairah Khalid, Siti Nurshahida Mohd Nasir, and Muammer D. Arif. "Investigation of the Effects of Machining Parameters and Air Blowing on Surface Topography in High Speed End Milling of Silicon." Advanced Materials Research 576 (October 2012): 11–14. http://dx.doi.org/10.4028/www.scientific.net/amr.576.11.

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Machining of silicon is an expensive affair because its inherent brittleness leads to subsurface crack generation. Research endeavours have therefore focused on ductile mode machining of silicon to obtain crack free machined surfaces with roughness as low as 0.22 µm or even below, hence eliminating the need for subsequent polishing/grinding operations. However, most of these research works utilized expensive ultraprecision machines and tools. This research aimed at determining the viability of using conventional milling machines with diamond coated tools, high speed attachments, and air blowing mechanisms in order to achieve ductile regime machining of silicon. Spindle speed, depth of cut, and feed rate, ranges: 60,000 to 80,000 rpm, 10 to 20 µm, and 5 to 15 mm/min respectively, were considered as the independent machining parameters. Compressed air at 0.35 MPa was also provided to prevent chip deposition on the finished surfaces. The resultant surfaces were analysed using Optical and Scanning Electron Microscopes. Then, the influence of each machining parameter on surface roughness was investigated. From the analyses it was concluded that all three machining parameters and air blowing had significant influence on the surface topography and integrity of silicon.

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Amin, A. K. M. Nurul, M. A. Mahmud, and M. D. Arif. "Prediction of Surface Roughness in Compressed Air Jet Assisted High Speed End Milling of Silicon Using Diamond Coated Tools." Advanced Materials Research 576 (October 2012): 41–45. http://dx.doi.org/10.4028/www.scientific.net/amr.576.41.

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The majority of semiconductor devices are made up of silicon wafers. Manufacturing of high-quality silicon wafers includes numerous machining processes, including end milling. In order to end mill silicon to a nano-meteric surface finish, it is crucial to determine the effect of machining parameters, which influence the machining transition from brittle to ductile mode. Thus, this paper presents a novel experimental technique to study the effects of machining parameters in high speed end milling of silicon. The application of compressed air, in order to blow away the chips formed, is also investigated. The machining parameters’ ranges which facilitate the transition from brittle to ductile mode cutting as well as enable the attainment of high quality surface finish and integrity are identified. Mathematical model of the response parameter, the average surface roughness (Ra) is subsequently developed using RSM in terms of the machining parameters. The model was determined, by Analysis of Variance (ANOVA), to have a confidence level of 95%. The experimental results show that the developed mathematical model can effectively describe the performance indicators within the controlled limits of the factors that are being considered.

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27

Dong, Guo Jun, Ming Zhou, and Shao Nan Huang. "Study on the Surface Quality of Silicon Nitride Ceramics in Ultrasonic Vibration Grinding." Key Engineering Materials 579-580 (September 2013): 144–47. http://dx.doi.org/10.4028/www.scientific.net/kem.579-580.144.

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The conventional machining method for silicon nitride ceramics has low machining efficiency, prone to cracking, chipping and other defects. In this paper, the author carried out a study on the influence of ultrasonic vibration grinding on surface quality of silicon nitride ceramic, and carried out ultrasonic vibration grinding process test for silicon nitride ceramic and conducted the analysis of influence of this machining process on surface quality with orthogonal test. The test results showed that the influence on surface roughness decreased in the order of spindle speed, feed rate, cutting depth, and amplitude of vibration.

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Qu, Xing Hua, X. H. Zhao, and S. H. Ye. "Defocusing Detection of Geometric Sizes in Micro-Machining." Key Engineering Materials 295-296 (October 2005): 125–32. http://dx.doi.org/10.4028/www.scientific.net/kem.295-296.125.

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Porous silicon with pore size in the range of a few nanometers can be used as multifunctional material in different MEMS applications. Via an electrochemical etching method, porous silicon is fabricated on the silicon substrate and removed as a sacrificial layer by using KOH solution to form a micro structure. This technique is typical in micro fabrication. Three-dimensional size is the basic geometric feature to describe microstructure surface characteristics. It is important to investigate measurement methods for it. UBM Microfocus Measurement System based on defocusing error detection is adopted to measure eroded depth of silicon cup. The measured data in the experiments are analyzed. The influence of etching time, current density and silicon type on etching depth can be acquired. Effective reference data can be provided for studying micro fabrication methods.

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Konneh, Mohamed, Mohammad Iqbal, M. Asnawi B. Kasim, and Nurbahiah B. Mohd Isa. "High Speed Milling of Silicon Carbide with Diamond Coated End Mills." Advanced Materials Research 576 (October 2012): 535–38. http://dx.doi.org/10.4028/www.scientific.net/amr.576.535.

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The primary applications of silicon carbide SiC-based materials, which include include micro-structures, optoelectronic devices, high temperature electronics, radiation hard electronics and high power/high frequency devices to name a few have necessitated the need for machining SiC. The paper presents the outcome of milling of silicon carbide using diamond coated end mill under different machining conditions in order to determine the surface roughness parameter after the machining processes. Relationship between the machining parameters and response variables has been established and a mathematical model has been predicted, the minimum roughness value, Rz being 0.19 µm.

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Konneh, Mohamed, Mohammad Iqbal, and Nik Mohd Azwan Faiz. "Diamond Coated End Mills in Machining Silicon Carbide." Advanced Materials Research 576 (October 2012): 531–34. http://dx.doi.org/10.4028/www.scientific.net/amr.576.531.

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Silicon Carbide (SiC) is a type of ceramic that belongs to the class of hard and brittle material. Machining of ceramic materials can result in surface alterations including rough surface, cracks, subsurface damage and residual stresses. Efficient milling of high performance ceramic involves the selection of appropriate operating parameters to maximize the material removal rate (MRR) while maintaining the low surface finish and limiting surface damage. SiC being a ceramic material, its machining poses a real problem due to its low fracture toughness, making it very sensitive to crack. The paper discusses milling of silicon carbide using diamond coated end mill under different machining conditions in order to determine the surface roughness parameter, Rt after the machining processes and to establish a relationship between the machining parameters and response variables. Based on the surface roughness carried out the lowest Rt obtained is 0.46 µm.

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31

Quinn, George D., Lewis K. Ives, and S. Jahanmir. "Machining Cracks in Finished Ceramics." Key Engineering Materials 290 (July 2005): 1–13. http://dx.doi.org/10.4028/www.scientific.net/kem.290.1.

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Grinding may create flaws that control strength and limit the performance of finished ceramics. Machining cracks sometimes have been difficult or impossible to find especially in toughened ceramics with interlocking grain microstructures that create rough fracture surfaces. Our fractographic examinations show that machining damage leaves telltale markings on fracture surfaces that may be easily detected using common fractographic techniques. A comprehensive study with over 400 ground rods and rectangular bars was conducted on several commercial silicon nitrides to study the effects of various machining conditions. Similarities and differences in behavior were observed. A paradoxical finding was that tougher silicon nitrides developed deeper grinding cracks. Machining crack size and shape strongly depended on the grinding wheel grit size.

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32

Paranthaman, P., and N. Sathiesh Kumar. "Wire Electric Discharge Machining Studies on Aluminium MMC Reinforced with Silicon Nitride." Journal of Advanced Research in Dynamical and Control Systems 11, no. 12-SPECIAL ISSUE (December 31, 2019): 1227–32. http://dx.doi.org/10.5373/jardcs/v11sp12/20193329.

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33

LIEW, Pay Jun, Jiwang YAN, and Tsunemoto KURIYAGAWA. "3413 Micro-Electrical Discharge Machining of Reaction-Bonded Silicon Carbide(RB-SiC)." Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21 2011.6 (2011): _3413–1_—_3413–6_. http://dx.doi.org/10.1299/jsmelem.2011.6._3413-1_.

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34

Sano, Yasuhisa, Masayo Watanabe, Takehiro Kato, Kazuya Yamamura, Hidekazu Mimura, and Kazuto Yamauchi. "Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide." Materials Science Forum 600-603 (September 2008): 847–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.847.

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Silicon carbide (SiC) is a promising semiconductor material for power devices. However, it is extremely hard and chemically stable; thus there is no efficient method of machining it without causing damage to the machined surface. Plasma chemical vaporization machining (PCVM) is plasma etching in atmospheric-pressure plasma. PCVM has a high removal rate because the radical density in atmospheric-pressure plasma is much higher than that in conventional low-pressure plasma. Although it was found that the machining characteristic of SiC by PCVM had stronger rf power dependence than that of Si, it has not been clear whether it is radical density dependence or temperature dependence. In this paper, the temperature dependences of the PCVM of Si and SiC are examined using pipe electrode apparatus. As a result, it is found that the removal rate of SiC has a much stronger temperature dependence than that of Si and that the surface roughness of the SiC Si face becomes worse as the etching temperature increases whereas that of the C face does not increase at etching temperatures of up to 360°C.

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Xin, Bin, and Wei Liu. "Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon." Mathematical Problems in Engineering 2021 (August 4, 2021): 1–13. http://dx.doi.org/10.1155/2021/6024662.

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During the wire electrical discharge machining (WEDM) process, a large number of discharge pits and a recast layer are easily generated on the workpiece surface, resulting in high surface roughness. A discharge forming cutting-electrochemical machining method for fabricating single-crystal silicon is proposed in this study to solve this problem. On the same processing equipment, single-crystal silicon is first cut using the discharge forming cutting method. Second, electrochemical anodic reaction technology is used to dissolve the discharge pits and recast layer on the single-crystal silicon surface. The machining mechanism of this process, the surface elements of the processed single-crystal silicon and a comparison of the kerf width are analyzed through experiments. On this basis, the influence of the movement speed of the copper foil electrode during electrochemical anodic dissolution on the final surface roughness is qualitatively analyzed. The experimental results show that discharge forming cutting-electrochemical machining can effectively eliminate the electrical discharge pits and recast layer, which are caused by electric discharge cutting, on the surface of single-crystal silicon, thereby reducing the surface roughness of the workpiece.

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Yamamura, Kazuya, Kunihito Kato, Yasuhisa Sano, Masafumi Shibahara, Katsuyoshi Endo, and Yuzo Mori. "High-Spatial-Resolution Machining Utilizing Atmospheric Pressure Plasma: Machining Characteristics of Silicon." Japanese Journal of Applied Physics 45, no. 10B (October 24, 2006): 8281–85. http://dx.doi.org/10.1143/jjap.45.8281.

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37

UNO, Yoshiyuki, Akira OKADA, and Yasuhiro OKAMOTO. "Recent Progress in Electrical Discharge Machining. Electrical Discharge Machining of Monocrystalline Silicon." Journal of the Japan Society for Precision Engineering 64, no. 12 (1998): 1739–42. http://dx.doi.org/10.2493/jjspe.64.1739.

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38

Shi, Baolu, Yifan Dai, Xuhui Xie, Shengyi Li, and Lin Zhou. "Arc-Enhanced Plasma Machining Technology for High Efficiency Machining of Silicon Carbide." Plasma Chemistry and Plasma Processing 36, no. 3 (January 19, 2016): 891–900. http://dx.doi.org/10.1007/s11090-016-9695-4.

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39

KANAI, Akira, Fumio INABA, and Masakazu MIYASHITA. "804 Measurement of Machining Stiffness in Ductile Mode Machining of Monocrystalline Silicon." Proceedings of Yamanashi District Conference 2009 (2009): 210–11. http://dx.doi.org/10.1299/jsmeyamanashi.2009.210.

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40

Choi, Dae-Hee, Je-Ryung Lee, Na-Ri Kang, Tae-Jin Je, Ju-Young Kim, and Eun-chae Jeon. "Study on ductile mode machining of single-crystal silicon by mechanical machining." International Journal of Machine Tools and Manufacture 113 (February 2017): 1–9. http://dx.doi.org/10.1016/j.ijmachtools.2016.10.006.

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41

Blake, Peter N., and Ronald O. Scattergood. "Ductile-Regime Machining of Germanium and Silicon." Journal of the American Ceramic Society 73, no. 4 (April 1990): 949–57. http://dx.doi.org/10.1111/j.1151-2916.1990.tb05142.x.

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42

KANEMATSU, Wataru, Seisuke SAKAI, Masaru ITO, Yukihiko YAMAUCHI, Tatsuki OHJI, and Shoji ITO. "Laser Machining of Hot-Pressed Silicon Nitride." Journal of the Ceramic Association, Japan 94, no. 1091 (1986): 671–76. http://dx.doi.org/10.2109/jcersj1950.94.1091_671.

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43

Campbell, G. R., and M. U. Islam. "Laser Machining of Silicon Nitride Base Materials." Materials and Manufacturing Processes 10, no. 3 (May 1995): 509–18. http://dx.doi.org/10.1080/10426919508935041.

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Khatri, Neha, Borad M. Barkachary, B. Muneeswaran, Rajab Al-Sayegh, Xichun Luo, and Saurav Goel. "Surface defects incorporated diamond machining of silicon." International Journal of Extreme Manufacturing 2, no. 4 (September 21, 2020): 045102. http://dx.doi.org/10.1088/2631-7990/abab4a.

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Kanematsu, Wataru, Seisuke Sakai, Masaru Ito, Yukuhiko Yamauchi, Tatsuki Ohji, and Shoji Ito. "Laser machining of hot-pressed silicon nitride." International Journal of High Technology Ceramics 3, no. 1 (January 1987): 89. http://dx.doi.org/10.1016/0267-3762(87)90082-8.

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Tanaka, Hiroaki, and Shoichi Shimada. "Damage-free machining of monocrystalline silicon carbide." CIRP Annals 62, no. 1 (2013): 55–58. http://dx.doi.org/10.1016/j.cirp.2013.03.098.

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Demura, Kazuya, Satoru Hirose, and Tohru Ihara. "Effect of Material Type and Tip Radius of AFM Probes on Nanosheets Groove Machining Accuracy." Advanced Materials Research 126-128 (August 2010): 835–42. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.835.

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This paper presents results of groove machining of potassium niobate nanosheets using an atomic force microscope (AFM). Groove machining operations are performed using recently developed diamond coating (DC) and super sharp silicon (sss) probes. The results obtained using these probes are compared to results obtained using a conventional silicon (Si) probe in order to examine the effects of the material type and the tip radius of the AFM probe on groove machining accuracy.

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Shiu, Chih Cheng, Wen Chien Wu, and Ping Hung Huang. "The Research of FPGA-Based Short Current Protection for Micro Electrochemical Machining." Key Engineering Materials 656-657 (July 2015): 398–403. http://dx.doi.org/10.4028/www.scientific.net/kem.656-657.398.

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During micro electrochemical machining process, the gap between tooling and workpiece is dynamically and mutually influenced by multiple machining parameters, which include machining voltage, feed rate, electrolyte flow rate and others. Once inter-electrode gap could not be kept easily with a stable distance due to spark or short-circuit situation maybe happened to damage the cathode. Hence, it is needed to have a real-time protection function embedded within the μECM machining controller. The study of the short-circuit protection module for electrochemical machining is based on field programmable gate array (FPGA) system architecture. The advantages of the digital logic FPGA chips are programmable, high-response and stable operation, custom development and combination of multiple functions with Silicon Intellectual Property. It can achieve special process control or operation analysis logic to meet specific application requirements process equipment control, logic processing and signal analysis. Through the design and application technology of the digital logic FPGA chip, we can develop customized and combine of multiple functions with Silicon Intellectual Property. These silicon intellectual properties combined with the soft-core embedded processors can form the system on programmable chip control module. With a variety of Silicon Intellectual Properties restructuring integration and use of FPGA programmable features that can programmable short-circuit protection logic for electrochemical machining. This module combines power signal capture circuit device, and continuing to capture current signals during electrochemical machining process. The current signals via analog to digital converters and digital filtering, and based on the selection of the short-circuit logic electrochemical determine whether the establishment of short-circuit conditions. When a short circuit occurs, the module can react immediately turn off the power supply, to protect the machining electrode and enhance precision machining.

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Hooper, Andy, and Daragh Finn. "Analysis of Silicon Micromachining by UV Lasers, and Implications for Full Cut Laser Dicing of Ultra-Thin Semiconductor Device Wafers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (January 1, 2010): 001743–59. http://dx.doi.org/10.4071/2010dpc-wp16.

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3D packaging technologies such as FLASH rely on die-to-die stacking of ultra-thin silicon devices with individual die thicknesses below 100 um. Because ultra-thin silicon wafers are very fragile, mechanical saw dicing of sub 100 um thick wafers tends to be more challenging, requiring slower processing and reduced throughput and/or yields. These challenges make full cut laser dicing an attractive solution. This presentation provides an investigation for machining of 50 um thick silicon wafers using a Gaussian-shaped, nanosecond pulsewidth, 355 nm UV laser. A range of machining speeds and laser fluences are compared, from single laser pulses to highly overlapped slow-velocity machining. 3D Laser Scanning Microscope and FIB/TEM cross sections are employed to characterize the state and depth of heating damage into the Si material. Implications for laser machining rates and die break strength are investigated for full cut laser dicing.

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Kim, Jong-Do, Su-Jin Lee, and Jeong Suh. "Characteristics of laser assisted machining for silicon nitride ceramic according to machining parameters." Journal of Mechanical Science and Technology 25, no. 4 (April 2011): 995–1001. http://dx.doi.org/10.1007/s12206-011-0201-x.

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Journal articles on the topic 'Silicon machining'

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