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Relevant bibliographies by topics / Silicon MOSFET

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Academic literature on the topic 'Silicon MOSFET'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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Journal articles on the topic "Silicon MOSFET"

1

Devadas, Shree Chakravarthy, and Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs." Platform : A Journal of Engineering 5, no. 2 (2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.

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The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad. The MOSFET model is designed with the heatsink to ensure accurate results are obtained in this research work. The key intention of this research is to investigate the condition of silicon and silicon carbide power MOSFETs during thermal stress. The thermal properties of silicon and silicon carbide MOSFET were investigated by developing a 3D modal and thermal str

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Chowdhury, Md. Iqbal Bahar. "Verilog-A Implementation of SOI MOSFET-Based Amplifier and Ring Oscillator Circuits." Journal of VLSI Design and Signal Processing 9, no. 1 (2023): 26–33. https://doi.org/10.5281/zenodo.15320070.

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In this work, a single-stage CMOS amplifier circuit and a three-stage CMOS ring oscillator circuit based on silicon-oninsulator-MOSFET (SOI MOSFET) have been implemented in the Cadence environment. In doing so, Verilog-A models of the long-channel (10 µm) SOI-MOSFET (for both NMOS and PMOS) have been utilized because of the unavailability of builtin models for such MOSFETs in the Cadence tools suite. To compare the performance of SOI-MOSFET-based circuits with the bulkMOSFET ones, Verilog-A models for the bulk-MOSFETs are also utilized for a 10 µm long channel. Curve tracer circuit

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Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, and Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.

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Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

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Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, Ibrahim Taib B, and Yusof Abdullah. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453–60. https://doi.org/10.11591/ijece.v9i2.pp1453-1460.

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Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

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Kaur Sidhu, Rajdevinder, Jagpal Singh Ubhi, Alpana Agarwal, and Balwinder Raj. "Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications." Journal of Nanoelectronics and Optoelectronics 18, no. 8 (2023): 915–23. http://dx.doi.org/10.1166/jno.2023.3460.

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The demand for low power consumption in modern electronic devices has led to the development of various technologies, including usage of different materials such as Si and GaAs. In this paper, we present a design and comparative analysis of Si and GaAs MOSFETs for low power applications. The analysis includes the electrical characteristics, performance parameters, and power consumption of both devices. The Si MOSFET and GaAs MOSFET are simulated and analyzed using TCAD tools, and the results are compared. The simulation results show that the GaAs MOSFET has a higher transconductance (gm) compa

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Taberkit, Amine Mohammed, Ahlam Guen-Bouazza, and Benyounes Bouazza. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421. http://dx.doi.org/10.11591/ijece.v8i1.pp421-428.

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The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate th

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Amine, Mohammed Taberkit, Guen-Bouazza Ahlam, and Bouazza Benyounes. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421–28. https://doi.org/10.11591/ijece.v8i1.pp421-428.

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The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate th

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Zhu, Tianle. "Study on switching behavior of silicon carbide MOSFET by gate driver." Highlights in Science, Engineering and Technology 56 (July 14, 2023): 506–19. http://dx.doi.org/10.54097/hset.v56i.10720.

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Compared with IGBT, SiC MOSFET has improved frequency efficiency, outstanding reliability which not only can achieve energy saving and loss reduction, but also increase power density and other characteristics. SiC MOSFETs are faced with countless challenges in practice because of their superior switching speed. The gate driver was adjusted in this paper to investigate the switching behavior of silicon carbide MOSFET. The switching behavior of silicon carbide devices was first characterized by simulation software using a double- pulse test bench. Different parasitic inductances, resistances and

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Che, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET." Theoretical and Natural Science 5, no. 1 (2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.

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In this paper, the third generation power MOSFET is introduced, and the physical model based on silicon based MOSFET is improved for SiC MOSFET, and the commercial planar gate and trench gate 1.2kV SiC MOSFET are simulated. The accuracy of physical modals is tested by comparing the static characteristics with commercial ones. The dynamic characteristics of two MOSFETs are simulated by inductively clamped double pulse circuit, and the circuit parameters are analyzed according to the static characteristics of the devices. The switching loss of the two MOSFETs is calculated and compared by using

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Patel, Dax, Soham Sojitra, Jay Kadia, Bhavik Chaudhary, and Rutu Parekh. "Comparative Study of Double Gate and Silicon on Insulator MOSFET by Varying Device Parameters." Trends in Sciences 19, no. 7 (2022): 3216. http://dx.doi.org/10.48048/tis.2022.3216.

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A comparative study of the single gate MOSFET (SG MOSFET), double-gate MOSFET (DG MOSFET) and silicon-on-insulator MOSFET (SOI MOSFET) is done using MOSFET simulation tool. Device simulation is done by varying different physical parameters of the device structure such as oxide thickness, channel length, temperature and different gate electrodes. Contour plots of SOI and DG MOSFET for electron concentration and potential at initial and final bias are simulated. The drain current vs gate voltage (Id-Vg) characteristics performance simulations show that DG MOSFET is better than SOI MOSFET for dif

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Dissertations / Theses on the topic "Silicon MOSFET"

1

Mohta, Nidhi. "MOSFET piezoresistance coefficients on (100) silicon." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0017761.

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Kong, Frederick. "Silicon-on-sapphire MOSFET parameter extraction by small-signal measurement /." [St. Lucia, Qld.], 2002. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe17051.pdf.

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Nam, David. "Characterization, Reliability and Packaging for 300 °C MOSFET." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/104896.

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Silicon carbide (SiC) is a wide bandgap material capable of higher voltage and higher temperature operation compared to its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the limitations of standard packaging. Additionally, there are reliability issues relating to the gate oxide region of the MOSFET, which is exacerbated through high temperature conditions. In this

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Singh, Jagar. "Technology, characteristics, and modeling of large-grain polysilicon MOSFET /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202002%20SINGH.

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Guerfi, Youssouf. "Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium." Thesis, Toulouse 3, 2015. http://www.theses.fr/2015TOU30253/document.

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Afin de poursuivre la réduction d'échelle des transistors MOS, l'industrie des semiconducteurs a su anticiper les limitations de la miniaturisation par l'introduction de nouveaux matériaux ou de nouvelles architectures. L'avènement des structures à triples grilles (FinFET) a permis de maitriser les effets canaux courts et poursuivre les efforts de miniaturisation (nœud technologique 14 nm en 2014). Le cas ultime pour le contrôle électrostatique de la grille sur le canal est donné par une grille entourant totalement le canal du dispositif. A cet effet, un transistor à nanofil à grille entourant

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Hologne, Malorie. "Contribution to condition monitoring of Silicon Carbide MOSFET based Power Module." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSE1317/document.

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L’avion plus électrique demande des modules de puissances de plus en plus performants dans les domaines de la fiabilité et de la maîtrise de la durée de vie restante. Le remplacement des systèmes hydrauliques et pneumatiques par des actionneurs électriques et leurs convertisseurs associés est, aujourd’hui, un moyen efficace de réduire les coûts de maintenance et la consommation de carburant. L’ajout de composantes électriques est également un bon moyen d’augmenter la fiabilité des systèmes. La fiabilité est toujours étudiée à partir de contraintes cycliques accélérées. La tendance actuelle est

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Francheteau, Anaïs. "Superconducting silicon on insulator and silicide-based superconducting MOSFET for quantum technologies." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY092/document.

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L'introduction de la supraconductivité dans des structures de type MOSFET en silicium ouvre de nouvelles perspectives dans la recherche en physique. Dans cette thèse, on s'intéresse aux propriétés de transport électronique au sein d'un MOSFET fabriqué avec des sources et drains supraconducteurs. Afin de garantir la reproductibilité de ces dispositifs, il est important d'intégrer des matériaux supraconducteurs compatibles avec la technologie CMOS exploitant la technologie silicium qui a pour énorme avantage d'être véritablement fiable et mature. L'idée fondamentale est de réaliser un nouveau ty

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Newton, M. I. N. "Investigation of the interaction between acoustic phonons and the 2DEG of a silicon MOSFET." Thesis, University of Nottingham, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380155.

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Cheong, Kuan Yew, and n/a. "Silicon Carbide as the Nonvolatile-Dynamic-Memory Material." Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20050115.101233.

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This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1][7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metaloxidesemiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10][15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity p

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Cheong, Kuan Yew. "Silicon Carbide as the Nonvolatile-Dynamic-Memory Material." Thesis, Griffith University, 2004. http://hdl.handle.net/10072/367177.

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This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1]–[7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metal–oxide–semiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10]–[15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity p

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Books on the topic "Silicon MOSFET"

1

Maeda, Shigenobu. Teishōhi denryoku kōsoku MOSFET gijutsu: Takesshō shirikon TFT fukagata SRAM to SOI debaisu. Sipec, 2002.

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1952-, Chattopadhyay Swapan, and Bera L. K, eds. Strained-Si heterostructure field effect devices. Taylor & Francis, 2007.

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Baliga, Jayant. Silicon RF power MOSFETs. World Scientific, 2005.

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Bufler, Fabian M. Full-band Monte Carlo simulation of nanoscale strained silicon MOSFETs. Hartung-Gorre, 2003.

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Ester, Peter. Accelerators in Silicon Valley. Amsterdam University Press, 2017. http://dx.doi.org/10.5117/9789462987166.

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Silicon Valley is the world's most successful innovation region. Apple, Google, Facebook, Instagram, Twitter, WhatsApp, Uber, and Airbnb changed our way of living. Silicon Valley has built a brilliant ecosystem that supports startups. Its entrepreneurial mindset fosters risk-taking, thinking big, and sharing. A fast growing number of accelerators in Silicon Valley help startups by bringing their product to the market, refining their business idea, developing their product, strengthening their team, designing a marketing strategy, getting first customers and traction, raising funds, and coping

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W, Eccleston, Uren M, and INFOS '91 (1991 :, eds. Insulating films on semiconductors 1991: Proceedings from the 7th biennial European conference, including satellite workshops on Silicon on Insulator: Materials and Device Technology and The Physics of Hot Electron Degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991. Adam Hilger, 1991.

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7

Wolf, Stanley. Silicon Processing for the VLSI Era, Vol. 3: The Submicron MOSFET. Lattice Press, 1994.

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Haddad, Homayoon. Characterization of oxygen and carbon effects in silicon material and MOSFET devices. 1990.

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Jeon, Deok-Su. Modeling the temperature dependence of the silicon-on-insulator mosfet for high-temperature applications. 1990.

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Choi, Jin Young. Modeling and simulation of the fully depleted silicon-on-insulator MOSFET for submicron CMOS IC design. 1991.

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Book chapters on the topic "Silicon MOSFET"

1

Colinge, Jean-Pierre. "The SOI MOSFET." In Silicon-on-Insulator Technology. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2121-8_5.

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Colinge, Jean-Pierre. "The SOI MOSFET." In Silicon-on-Insulator Technology: Materials to VLSI. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4757-2611-4_5.

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Colinge, Jean-Pierre. "The SOI MOSFET." In Silicon-on-Insulator Technology: Materials to VLSI. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4419-9106-5_5.

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Colinge, Jean-Pierre. "The SOI MOSFET Operating in a Harsh Environment." In Silicon-on-Insulator Technology. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2121-8_7.

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Magnus, Wim, and Wim Schoenmaker. "Velocity—Field Characteristics of a Silicon MOSFET." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-56133-7_11.

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Colinge, Jean-Pierre. "The Soi Mosfet in a Harsh Environment." In Silicon-on-Insulator Technology: Materials to VLSI. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4419-9106-5_7.

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Colinge, Jean-Pierre. "The SOI MOSFET Operating in a Harsh Environment." In Silicon-on-Insulator Technology: Materials to VLSI. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4757-2611-4_7.

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Schöner, Adolf, Mietek Bakowski, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, and Masayuki Abe. "Realization of Large Area Vertical 3C-SiC MOSFET Devices." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1273.

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Imaizumi, Masayuki, Yoichiro Tarui, Shin-Ichi Kinouchi, et al. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1289.

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Horsfall, A. B., C. H. A. Prentice, Peter Tappin, et al. "Optimisation of 4H-SiC MOSFET Structures for Logic Applications." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1325.

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Conference papers on the topic "Silicon MOSFET"

1

Karthika, K., G. Archana, K. Mariammal alais Mala, I. Vivek Anand, M. Sathish Kumar, and T. S. Arun Samuel. "Performance Analysis of Silicon Carbide Processing for Power MOSFET." In 2024 9th International Conference on Communication and Electronics Systems (ICCES). IEEE, 2024. https://doi.org/10.1109/icces63552.2024.10859928.

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Zhong, Xiaohan, Lei Tang, Huaping Jiang, and Yuting Xie. "Short-term Recovery of Silicon Carbide Power MOSFET Threshold Voltage." In 2024 6th International Conference on Energy, Power and Grid (ICEPG). IEEE, 2024. https://doi.org/10.1109/icepg63230.2024.10775710.

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Lovely, P., K. S. Subashree, J. Sangeetha Ragavi, I. Vivek Anand, T. S. Arun Samuel, and M. Sathishkumar. "Device Parameter Variation for Gate Engineered Silicon Nanowire (SiNW) MOSFET." In 2025 Fifth International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT). IEEE, 2025. https://doi.org/10.1109/icaect63952.2025.10958829.

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Prager, Aaron A., Hubert C. George, Alexei O. Orlov, and Gregory L. Snider. "Cryogenic MOSFET kink effect abatement." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418490.

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Casady, J. B., A. K. Agarwal, L. B. Rowland, et al. "Silicon carbide power MOSFET technology." In Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711654.

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Yu, Chang-Hung, and Pin Su. "Anomalous electrostatics and intrinsic variability in GeOI p-MOSFET." In 2014 Silicon Nanoelectronics Workshop (SNW). IEEE, 2014. http://dx.doi.org/10.1109/snw.2014.7348618.

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Liu, Liqiao, Xiaoyan Liu, and Gang Du. "Evaluation of Photosensitive Performance of Different Structured UTBB MOSFET." In 2019 Silicon Nanoelectronics Workshop (SNW). IEEE, 2019. http://dx.doi.org/10.23919/snw.2019.8782896.

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Okada, Hiroyuki, Yasutaka Uchida, Masakazu Arai, Shunri Oda, and Masakiyo Matsumura. "Vertical-Type Amorphous-Silicon MOSFET IC's." In 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.a-3-3.

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Huang, Ya-Chi, Meng-Hsueh Chiang, and Shui-Jinn Wang. "An area efficient gate-all-around ring MOSFET." In 2016 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2016. http://dx.doi.org/10.1109/snw.2016.7578011.

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Du, Wei, Dedy Septono Putranto, Hiroaki Satoh, et al. "Optoelectrical lifetime evaluation of single holes in SOI MOSFET." In 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243297.

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Reports on the topic "Silicon MOSFET"

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Bloomfield, P. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/106639.

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Ogunniyi, Aderinto, Heather O’Brien, and Miguel Hinojosa. Sub-Millisecond Pulse Power Evaluation of High-Voltage Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and High-Voltage SiC Insulated Gate Bipolar Translator. DEVCOM Army Research Laboratory, 2022. http://dx.doi.org/10.21236/ad1181629.

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Huang, Tina, Zachary Arnold, and Remco Zwetsloot. Most of America’s “Most Promising” AI Startups Have Immigrant Founders. Center for Security and Emerging Technology, 2020. http://dx.doi.org/10.51593/20200065.

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Half of Silicon Valley’s startups have at least one foreign-born founder, and immigrants are twice as likely as native-born Americans to start new businesses. To understand how immigration shapes AI entrepreneurship in particular in the United States, Huang, Arnold and Zwetsloot analyze the 2019 AI 50, Forbes’s list of the “most promising” U.S.-based AI startups. They find that 66 percent of these startups had at least one immigrant founder. The authors write that policymakers should consider lifting some current immigration restrictions and creating new pathways for entrepreneurs.

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Peršun, Marijan. Scaling of the Silicon-on-Insulator Si and Si1-xGex p-MOSFETs. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.6810.

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Fedasiuk, Ryan, Karson Elmgren, and Ellen Lu. Silicon Twist: Managing the Chinese Military’s Access to AI Chips. Center for Security and Emerging Technology, 2022. http://dx.doi.org/10.51593/20210068.

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The Chinese military’s progress in artificial intelligence largely depends on continued access to high-end semiconductors. By analyzing thousands of purchasing records, this policy brief offers a detailed look at how China’s military comes to access these devices. The authors find that most computer chips ordered by Chinese military units are designed by American companies, and outline steps that the U.S. government could take to curtail their access.

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Rosenberger, Grant E., and Peter Zimmerman. Interest Rate Risk at US Credit Unions. Federal Reserve Bank of Cleveland, 2024. http://dx.doi.org/10.26509/frbc-wp-202403.

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Rising interest rates have prompted concerns about losses on bank assets, especially following the failure of Silicon Valley Bank (SVB) in March 2023. In this working paper, we examine whether US credit unions could be subject to similar losses as banks and analyze how their regulatory capital would be affected. We estimate that after realizing losses from assets that have decreased in value and not yet been sold the overall net worth of the credit union industry would have fallen by 40 percent in 2023:Q1. Unrealized losses were most severe at the largest credit unions. Nonetheless, the bulk o

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Kalyani, Aakash, Nicholas Bloom, Marcela Carvalho, Tarek Hassan, Josh Lerner, and Ahmed Tahoun. The Diffusion of New Technologies. Institute for New Economic Thinking Working Paper Series, 2024. http://dx.doi.org/10.36687/inetwp222.

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We identify phrases associated with novel technologies using textual analysis of patents, job postings, and earnings calls, enabling us to identify four stylized facts on the diffusion of jobs relating to new technologies. First, the development of economically impactful new technologies is geographically highly concentrated, more so even than overall patenting: 56% of the most economically impactful technologies come from just two U.S. locations, Silicon Valley and the Northeast Corridor. Second, as the technologies mature and the number of related jobs grows, hiring spreads geographically. B

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Yagci, Mustafa. Global Chip Shortage and Implications for Developing Countries. Islamic Development Bank Institute, 2022. http://dx.doi.org/10.55780/re24021.

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Semiconductors, commonly known as chips, are crucial parts of our daily lives. In every electronic device we use, from smartphones to computers and automobiles to coffee machines, chips constitute one of the most critical components. Chips are packed with thousands or billions of transistors on a piece of small, coin-sized silicon or germanium. They function as the brains of electronic devices by storing, moving, and processing data. With the onset of the Covid-19 pandemic, the surge in demand for electronic devices and the shock in the global supply of chips have resulted in a global chip sho

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Venedicto, Melissa, and Cheng-Yu Lai. Facilitated Release of Doxorubicin from Biodegradable Mesoporous Silica Nanoparticles. Florida International University, 2021. http://dx.doi.org/10.25148/mmeurs.009774.

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Cervical cancer is one of the most common causes of cancer death for women in the United States. The current treatment with chemotherapy drugs has significant side effects and may cause harm to healthy cells rather than cancer cells. In order to combat the potential side effects, nanoparticles composed of mesoporous silica were created to house the chemotherapy drug doxorubicin (DOX). The silica network contains the drug, and a pH study was conducted to determine the conditions for the nanoparticle to disperse the drug. The introduction of disulfide bonds within the nanoparticle created a fram

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Brown, Anne, Alice Grossman, and Lucy Noble. Via2G Microtransit Pilot Evaluation. Mineta Transportation Institute, 2021. http://dx.doi.org/10.31979/mti.2021.2002.

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Google partnered with Via to launch an on-demand microtransit called Via2G between January and March 2020. The pilot provided employees with free travel to/from two of its offices in suburban, congested Silicon Valley. While the pilot was cut short due to COVID-19, rider participation grew steadily during operation. Of trip requests, 8,636 (87.8%) resulted in a ride offer. Unfulfilled requests were primarily outside of pilot operating times or when rider demand exceeded driver supply. Most users (72%) completed at least two trips, although recurring users were less likely to complete errands o

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