Log in

Relevant bibliographies by topics / Silicon MOSFET / Journal articles

To see the other types of publications on this topic, follow the link: Silicon MOSFET.

Journal articles on the topic 'Silicon MOSFET'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Silicon MOSFET.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Devadas, Shree Chakravarthy, and Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs." Platform : A Journal of Engineering 5, no. 2 (2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.

Full text

Abstract:

The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad. The MOSFET model is designed with the heatsink to ensure accurate results are obtained in this research work. The key intention of this research is to investigate the condition of silicon and silicon carbide power MOSFETs during thermal stress. The thermal properties of silicon and silicon carbide MOSFET were investigated by developing a 3D modal and thermal str

APA, Harvard, Vancouver, ISO, and other styles

2

Chowdhury, Md. Iqbal Bahar. "Verilog-A Implementation of SOI MOSFET-Based Amplifier and Ring Oscillator Circuits." Journal of VLSI Design and Signal Processing 9, no. 1 (2023): 26–33. https://doi.org/10.5281/zenodo.15320070.

Full text

Abstract:

In this work, a single-stage CMOS amplifier circuit and a three-stage CMOS ring oscillator circuit based on silicon-oninsulator-MOSFET (SOI MOSFET) have been implemented in the Cadence environment. In doing so, Verilog-A models of the long-channel (10 µm) SOI-MOSFET (for both NMOS and PMOS) have been utilized because of the unavailability of builtin models for such MOSFETs in the Cadence tools suite. To compare the performance of SOI-MOSFET-based circuits with the bulkMOSFET ones, Verilog-A models for the bulk-MOSFETs are also utilized for a 10 µm long channel. Curve tracer circuit

APA, Harvard, Vancouver, ISO, and other styles

3

Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, and Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.

Full text

Abstract:

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

APA, Harvard, Vancouver, ISO, and other styles

4

Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, Ibrahim Taib B, and Yusof Abdullah. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453–60. https://doi.org/10.11591/ijece.v9i2.pp1453-1460.

Full text

Abstract:

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

APA, Harvard, Vancouver, ISO, and other styles

5

Kaur Sidhu, Rajdevinder, Jagpal Singh Ubhi, Alpana Agarwal, and Balwinder Raj. "Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications." Journal of Nanoelectronics and Optoelectronics 18, no. 8 (2023): 915–23. http://dx.doi.org/10.1166/jno.2023.3460.

Full text

Abstract:

The demand for low power consumption in modern electronic devices has led to the development of various technologies, including usage of different materials such as Si and GaAs. In this paper, we present a design and comparative analysis of Si and GaAs MOSFETs for low power applications. The analysis includes the electrical characteristics, performance parameters, and power consumption of both devices. The Si MOSFET and GaAs MOSFET are simulated and analyzed using TCAD tools, and the results are compared. The simulation results show that the GaAs MOSFET has a higher transconductance (gm) compa

APA, Harvard, Vancouver, ISO, and other styles

6

Taberkit, Amine Mohammed, Ahlam Guen-Bouazza, and Benyounes Bouazza. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421. http://dx.doi.org/10.11591/ijece.v8i1.pp421-428.

Full text

Abstract:

The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate th

APA, Harvard, Vancouver, ISO, and other styles

7

Amine, Mohammed Taberkit, Guen-Bouazza Ahlam, and Bouazza Benyounes. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421–28. https://doi.org/10.11591/ijece.v8i1.pp421-428.

Full text

Abstract:

The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate th

APA, Harvard, Vancouver, ISO, and other styles

8

Zhu, Tianle. "Study on switching behavior of silicon carbide MOSFET by gate driver." Highlights in Science, Engineering and Technology 56 (July 14, 2023): 506–19. http://dx.doi.org/10.54097/hset.v56i.10720.

Full text

Abstract:

Compared with IGBT, SiC MOSFET has improved frequency efficiency, outstanding reliability which not only can achieve energy saving and loss reduction, but also increase power density and other characteristics. SiC MOSFETs are faced with countless challenges in practice because of their superior switching speed. The gate driver was adjusted in this paper to investigate the switching behavior of silicon carbide MOSFET. The switching behavior of silicon carbide devices was first characterized by simulation software using a double- pulse test bench. Different parasitic inductances, resistances and

APA, Harvard, Vancouver, ISO, and other styles

9

Che, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET." Theoretical and Natural Science 5, no. 1 (2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.

Full text

Abstract:

In this paper, the third generation power MOSFET is introduced, and the physical model based on silicon based MOSFET is improved for SiC MOSFET, and the commercial planar gate and trench gate 1.2kV SiC MOSFET are simulated. The accuracy of physical modals is tested by comparing the static characteristics with commercial ones. The dynamic characteristics of two MOSFETs are simulated by inductively clamped double pulse circuit, and the circuit parameters are analyzed according to the static characteristics of the devices. The switching loss of the two MOSFETs is calculated and compared by using

APA, Harvard, Vancouver, ISO, and other styles

10

Patel, Dax, Soham Sojitra, Jay Kadia, Bhavik Chaudhary, and Rutu Parekh. "Comparative Study of Double Gate and Silicon on Insulator MOSFET by Varying Device Parameters." Trends in Sciences 19, no. 7 (2022): 3216. http://dx.doi.org/10.48048/tis.2022.3216.

Full text

Abstract:

A comparative study of the single gate MOSFET (SG MOSFET), double-gate MOSFET (DG MOSFET) and silicon-on-insulator MOSFET (SOI MOSFET) is done using MOSFET simulation tool. Device simulation is done by varying different physical parameters of the device structure such as oxide thickness, channel length, temperature and different gate electrodes. Contour plots of SOI and DG MOSFET for electron concentration and potential at initial and final bias are simulated. The drain current vs gate voltage (Id-Vg) characteristics performance simulations show that DG MOSFET is better than SOI MOSFET for dif

APA, Harvard, Vancouver, ISO, and other styles

11

Bijoy, Haider Mahmud, Himu Suprio Saha, Desha Farzana Islam, et al. "Exploring Silicon Nitride Gate Materials for Enhanced Performance of Silicon-Based MOSFET." AIUB Journal of Science and Engineering (AJSE) 23, no. 3 (2024): 238–47. https://doi.org/10.53799/ajse.v23i3.1201.

Full text

Abstract:

This research paper investigates the potential of silicon nitride gate materials for enhancing the performance of silicon- based Metal-Oxide -Semiconductor Field-Effect Transistors (MOSFETs). Through simulations conducted using COMSOL Multiphysics, we analyzed the impact of using silicon nitride gate materials on MOSFET performance. Our results demonstrate that silicon nitride gate materials offer improved device characteristics, including reduced gate leakage currents, enhanced carrier mobility, and reduced threshold voltage variability. These findings underscore the potential of silicon nitr

APA, Harvard, Vancouver, ISO, and other styles

12

Melnyk, Kyrylo, Lu Yang Zhang, Peter Michael Gammon, Arne Benjamin Renz, and Marina Antoniou. "Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs." Solid State Phenomena 358 (August 21, 2024): 97–102. http://dx.doi.org/10.4028/p-zb9gva.

Full text

Abstract:

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are successfully replacing traditional silicon insulated gate bipolar transistors (Si IGBTs) in power applications. Nonetheless, two crucial challenges persist: gate-oxide reliability and a reduced short circuit (SC) withstand time. This paper explores a novel MOSFET structure, which is designed to address these concerns and compares it with existing designs through extensive 3D TCAD simulations. The proposed MOSFET structure features a p-region under the gate, providing a unique configuration for improved perfo

APA, Harvard, Vancouver, ISO, and other styles

13

Prado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori, and José R. Pinheiro. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications." Energies 15, no. 14 (2022): 5244. http://dx.doi.org/10.3390/en15145244.

Full text

Abstract:

This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage

APA, Harvard, Vancouver, ISO, and other styles

14

Ataseven, Ismail, Ilker Sahin, and Salih Baris Ozturk. "Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar." Energies 16, no. 6 (2023): 2903. http://dx.doi.org/10.3390/en16062903.

Full text

Abstract:

Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency. As a result, Si MOSFETs are replaced with SiC MOSFETs in many industrial applications. However, there are still not as many SiC modules to customize for each application. To meet the high-power requirement for custom applications, paralleling discrete SiC MOSFETs is an essential solution. However, it comes with many technical challenges; inequality in c

APA, Harvard, Vancouver, ISO, and other styles

15

Chek Yee, Ooi, Mok Kai Ming, and Wong Pei Voon. "DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs." Platform : A Journal of Science and Technology 4, no. 1 (2021): 73. http://dx.doi.org/10.61762/pjstvol4iss1art11064.

Full text

Abstract:

The investigation of silicon-based nano-MOSFETs logic circuits is helpful to gain more comprehensive knowledge about nanoscale transistors. Therefore, a simulation study has been performed on four logic families of two inputs NOR gate logic circuits, namely (i) nano-CMOS NOR gate, (ii) nano-MOSFET loaded n-type nano-MOSFET NOR gate, (iii) 733.8 Ω resistive loaded nano-MOSFET NOR gate, and finally (iv) pseudo-n-type nano-MOSFET NOR gate. The nano-MOSFET technology node studied in this paper is 10 nm. Device simulation is done using an online NanoMOS simulator, whereas circuit simulation is carr

APA, Harvard, Vancouver, ISO, and other styles

16

Kampitsis, Georgios E., Stavros A. Papathanassiou, and Stefanos N. Manias. "Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits." Materials Science Forum 856 (May 2016): 362–67. http://dx.doi.org/10.4028/www.scientific.net/msf.856.362.

Full text

Abstract:

In this paper, the performance of silicon (Si) and silicon carbide (SiC) power MOSFETs during short circuits is investigated. The response of both semiconductors is examined under hard switch fault and fault under load conditions using a short circuit tester board. In addition, their failure mechanism is recorded and analyzed. Examination results show that the SiC MOSFET fails in the energy limiting mode, due to gate oxide rupture, while the Si MOSFET is destructed during the power limiting mode, at the beginning of the fault. The electro-thermal characterization of these devices is performed

APA, Harvard, Vancouver, ISO, and other styles

17

Tilak, Vinayak, Cheng-Po Chen, Peter Losee, Emad Andarawis, and Zachary Stum. "Development of a 300°C capable SiC based operational amplifier." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (2010): 000305–9. http://dx.doi.org/10.4071/hitec-vtilak-wp24.

Full text

Abstract:

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 3

APA, Harvard, Vancouver, ISO, and other styles

18

Li, Hui, Renze Yu, Yi Zhong, Ran Yao, Xinglin Liao, and Xianping Chen. "Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET." Micromachines 10, no. 5 (2019): 314. http://dx.doi.org/10.3390/mi10050314.

Full text

Abstract:

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection cir

APA, Harvard, Vancouver, ISO, and other styles

19

Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, et al. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.

Full text

Abstract:

ABSTRACTDue to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree’s 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped

APA, Harvard, Vancouver, ISO, and other styles

20

Dhar, Sarit, Shurui Wang, John R. Williams, Sokrates T. Pantelides, and Leonard C. Feldman. "Interface Passivation for Silicon Dioxide Layers on Silicon Carbide." MRS Bulletin 30, no. 4 (2005): 288–92. http://dx.doi.org/10.1557/mrs2005.75.

Full text

Abstract:

AbstractSilicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advanc

APA, Harvard, Vancouver, ISO, and other styles

21

Gu, Jie, Qingzhu Zhang, Zhenhua Wu, et al. "Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs." Nanomaterials 11, no. 2 (2021): 309. http://dx.doi.org/10.3390/nano11020309.

Full text

Abstract:

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band stru

APA, Harvard, Vancouver, ISO, and other styles

22

Okada, Masakazu, Teruaki Kumazawa, Yusuke Kobayashi, Masakazu Baba, and Shinsuke Harada. "Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS." Materials Science Forum 1004 (July 2020): 795–800. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.795.

Full text

Abstract:

A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances

APA, Harvard, Vancouver, ISO, and other styles

23

Noor, Anis Sofea Binti Mohd, Thikra S. Dhahi, Siti Fatimah Abd Rahman, Mohd Rosydi Zakaria, M. F. M. Fathil, and Mohamed Fauzi Packeer Mohamed. "Silicon Carbide MOSFET based Inverter for Smart Power Switch." Journal of Physics: Conference Series 3020, no. 1 (2025): 012013. https://doi.org/10.1088/1742-6596/3020/1/012013.

Full text

Abstract:

Abstract This research investigates the comparative analysis of Silicon Carbide (SiC) and Silicon (Si) MOSFET based inverter focusing on switching losses, conduction losses, and power losses. While Si has been the traditional semiconductor material, it has limitations in power losses which affecting the efficiency and reliability of the system. Si MOSFETs face challenges such as slow switching speeds and inherent conduction losses, leading to a significant power loss. In contrast, SiC is a promising alternative due to its superior physical properties including a higher breakdown electric field

APA, Harvard, Vancouver, ISO, and other styles

24

Murakami, Eiichi, Tatsuya Takeshita, and Kazuhiro Oda. "Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs." Materials Science Forum 1062 (May 31, 2022): 642–46. http://dx.doi.org/10.4028/p-xz45c3.

Full text

Abstract:

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been produced by several vendors for commercial applications. SiC-MOSFET reliability was assessed using bias-temperature instability (BTI) and time-dependent dielectric breakdown (TDDB) characteristics. Here, we compared two planar SiC-MOSFET samples (A and B) from different vendors. The samples exhibited significantly different positive and negative BTI, time-dependent gate-current, TDDB lifetime statistics, and temperature dependence. These differences suggest NO (nitric oxide)-annealing variations.

APA, Harvard, Vancouver, ISO, and other styles

25

GHORI, A., and P. GHOSH. "ANALYSIS OF OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR APPLICATION IN GHz FREQUENCY RANGE." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 690–95. http://dx.doi.org/10.1142/s0129156404002685.

Full text

Abstract:

Operational Transconductance Amplifier (OTA) is an excellent current mode device suited very well for VLSI implementation. In this contribution we report realization of OTA using Silicon-On-Insulator (SOI) structure based MOSFETs and compared them to OTA designed with bulk MOSFET. SOI based OTA outperformed bulk MOSFET OTA giving close to 10 GHz improvement in high frequency f T . A band-pass filter was implemented with SOI based OTA with a center frequency of 7 GHz and a bandwidth of 480 kHz.

APA, Harvard, Vancouver, ISO, and other styles

26

Gniazdowski, Zenon. "Behavioral modeling of stressed MOSFET." Zeszyty Naukowe WWSI 9, no. 13 (2015): 103——126. https://doi.org/10.26348/znwwsi.13.103.

Full text

Abstract:

In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of specific piezoconductance coefficients on a plane of channel can show which directions of transistor channel are desirable for improvement of MOSFET performances. This model gives possibility to predict optimal transistor channel orientation, for the given stress state in MOSFET channel. Possible simp

APA, Harvard, Vancouver, ISO, and other styles

27

Li, Jinyuan, Meiting Cui, Yujie Du, Junji Ke, and Zhibin Zhao. "Influence of Parasitic Inductances on Switching Performance of SiC MOSFET." E3S Web of Conferences 64 (2018): 04005. http://dx.doi.org/10.1051/e3sconf/20186404005.

Full text

Abstract:

Compared to the silicon power devices, silicon carbide device has shorter switch time. Hence, as a result of the faster transition of voltage (dv/dt) and current (di/dt) in SiC MOSFET, the influence of parasitic parameters on SiC MOSFET’s switching transient is more serious. This paper gives an experimental study of the influence of parasitic inductance on SiC MOSFET’s switching characteristics. Most significance parameters are the parasitic inductances of gate driver loop and power switching loop. These include the SiC MOSFET package’s parasitic inductance, interconnect inductance and the par

APA, Harvard, Vancouver, ISO, and other styles

28

Gowthaman, Naveenbalaji, and Viranjay Srivastava. "Analysis of <i>InN/La<sub>2</sub>O<sub>3</sub></i> Twosome for Double-Gate MOSFETs for Radio Frequency Applications." Materials Science Forum 1048 (January 4, 2022): 147–57. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.147.

Full text

Abstract:

The channel material of a gate describes the operating condition of the MOSFET. A suitable operating condition prevails in MOSFETs if the transistors are quite enough to observe and control at the nanometer regime. An efficient gate and channel material have been proposed in this work which is based on the electrical properties they exhibit at the temperature of 300K. The doping concentration for the electrons and holes is maintained to be 1Χ1019cm-3 for the entire electronic simulator. The simulation results show that using La2O3 along with Indium Nitride (InN) material for the designing of D

APA, Harvard, Vancouver, ISO, and other styles

29

Mohammad, Hameed Pasha, H. C. Hadimani, Udara Yedukondalu та Srinivasa Rao Udara. "Distinct ρ-based model of silicon N-channel double gate MOSFET". International Journal of Reconfigurable and Embedded Systems (IJRES) 11, № 1 (2022): 71. http://dx.doi.org/10.11591/ijres.v11.i1.pp71-83.

Full text

Abstract:

<span lang="EN-US">Growing endless demand for digital processing technology, to perform high speed computations with low power utilization and minimum propagation delay, the metal-oxide-semiconductor (MOS) technology is implemented in the areas of very large scale integrated (VLSI) circuit technology. But MOS technology is facing the challenges in linear scaling the transistors with different channel modelling for the present day microelectronic regime. Linear scaling of MOSFET is restricted through short-channel-effects (SCEs). Use of silicon N-channel double gate MOSFETs (DG MOSFETs) i

APA, Harvard, Vancouver, ISO, and other styles

30

Hameed, Pasha Mohammad, C. Hadimani H., Yedukondalu Udara та Rao Udara Srinivasa. "Distinct ρ-based model of silicon N-channel double gate MOSFET". International Journal of Reconfigurable and Embedded Systems (IJRES) 11, № 1 (2022): 71–83. https://doi.org/10.11591/ijres.v11.i1.pp71-83.

Full text

Abstract:

Growing endless demand for digital processing technology, to perform high speed computations with low power utilization and minimum propagation delay, the metal-oxide-semiconductor (MOS) technology is implemented in the areas of very large scale integrated (VLSI) circuit technology. But MOS technology is facing the challenges in linear scaling the transistors with different channel modelling for the present day microelectronic regime. Linear scaling of MOSFET is restricted through short-channel-effects (SCEs). Use of silicon N-channel double gate MOSFETs (DG MOSFETs) in present day microelectr

APA, Harvard, Vancouver, ISO, and other styles

31

Pepper, M. "The Silicon MOSFET." Physics Bulletin 37, no. 1 (1986): 22–25. http://dx.doi.org/10.1088/0031-9112/37/1/023.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Shashwat, Adarsh Kumar Singh, Rishabh Misra, Girish Wadhwa, R. Nirosha, and Rajesh Agarwal. "Design and Performance Analysis of Partially Depleted and Fully Depleted Silicon on Insulator MOSFET." Journal of Physics: Conference Series 2335, no. 1 (2022): 012042. http://dx.doi.org/10.1088/1742-6596/2335/1/012042.

Full text

Abstract:

Abstract In this paper, Partially Depleted Silicon on Insulator (PDSOI) MOSFET and Fully Depleted Silicon on Insulator (FDSOI) MOSFET are designed, and the impact of n-type doping concentration, work function variation, gate oxide, and silicon layer thickness on the performance of the device is studied and analyzed. The floating body and associated kink effects present in a PDSOI device are also investigated in detail. In addition to this, comparisons are made between PDSOI and FDSOI MOSFET to analyze their performance for various device parameters. The threshold voltage rises with increasing

APA, Harvard, Vancouver, ISO, and other styles

33

Langpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, et al. "Review of Silicon Carbide Processing for Power MOSFET." Crystals 12, no. 2 (2022): 245. http://dx.doi.org/10.3390/cryst12020245.

Full text

Abstract:

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to th

APA, Harvard, Vancouver, ISO, and other styles

34

Hoffmann, Felix, Stefan Schmitt, and Nando Kaminski. "Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules." Materials Science Forum 1062 (May 31, 2022): 487–92. http://dx.doi.org/10.4028/p-7j50kd.

Full text

Abstract:

In this work, the H3TRB performance of power modules with SiC MOSFET chips is investigated and compared to their silicon counterparts with similar electrical ratings. For this purpose, SiC MOSFETs and silicon IGBT chips are packaged in the same housing and with the same packaging technology and an H3TRB test is performed on both types of test devices. The results show that while both types exhibit an excellent H3TRB performance, the SiC MOSFETs had a significantly longer time to failure but also a wider failure distribution. Hence, the investigations presented in this paper confirm that proper

APA, Harvard, Vancouver, ISO, and other styles

35

Xu, Yige. "Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review." Applied and Computational Engineering 40, no. 1 (2024): 180–86. http://dx.doi.org/10.54254/2755-2721/40/20230647.

Full text

Abstract:

Silicon Carbide (SiC) MOSFET technology plays a pivotal role in the drive systems of electric vehicles (EVs), offering key applications and facing significant challenges. This paper provides an overview of the fundamental principles and characteristics of SiC MOSFETs, highlighting the unique properties of SiC materials. It delves into the critical applications of SiC MOSFETs in electric vehicle drive systems, including motor drives and inverters, and analyzes the advantages of using SiC MOSFETs for efficient energy conversion at high temperatures. The paper also discusses the key challenges fa

APA, Harvard, Vancouver, ISO, and other styles

36

Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.

Full text

Abstract:

Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to

APA, Harvard, Vancouver, ISO, and other styles

37

Akbar, Ghulam, Alessio Di Fatta, Giuseppe Rizzo, Guido Ala, Pietro Romano, and Antonino Imburgia. "Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability." Physchem 5, no. 1 (2025): 10. https://doi.org/10.3390/physchem5010010.

Full text

Abstract:

Silicon carbide (SiC) MOSFETs, as a member of the emerging technology of wide-bandgap (WBG) semiconductors, are transforming high-power and high-temperature applications due to their superior electrical and thermal properties. Their potential to outperform traditional silicon-based devices, particularly in terms of efficiency and operational stability, has made them a popular choice for power electronics. However, reliability issues about numerous failure types, including gate-oxide degradation, threshold voltage instability, and body diode degeneration, remain serious challenges. This article

APA, Harvard, Vancouver, ISO, and other styles

38

Shin, Kanghee, Dongkyun Kim, Minu Kim, Junho Park, and Changho Han. "Enhanced Short-Circuit Robustness of 1.2 kV Split Gate Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors for High-Frequency Applications." Electronics 14, no. 1 (2025): 163. https://doi.org/10.3390/electronics14010163.

Full text

Abstract:

Split Gate SiC MOSFETs (SG-MOSFETs) have been demonstrated to exhibit excellent power dissipation at high operating frequencies due to their low specific reverse transfer capacitance (Crss,sp); however, there are several reliability issues of SG-MOSFETs, including electric field crowding at the gate oxide and insufficient short-circuit (SC) robustness. In this paper, we propose a device structure to enhance the short-circuit withstand time (SCWT) of 1.2 kV SG-MOSFETs. The proposed P-shielded SG-MOSFETs (PSG-MOSFETs) feature a P-shielding region that expands the depletion region within the JFET

APA, Harvard, Vancouver, ISO, and other styles

39

Mbonane, Sandile H., and Viranjay Srivastava. "Class-B Power Amplifier with Si-Based Double-Gate MOSFET: A Circuit Perspective." Key Engineering Materials 907 (January 21, 2022): 50–56. http://dx.doi.org/10.4028/www.scientific.net/kem.907.50.

Full text

Abstract:

This research work designs a power amplifier with the use of Silicon-based Double-Gate (DG) MOSFET. It is a novel device used to amplify the input signal of an audio signal, etc. This research paper provides information on the problem identification in the existing models and its design objectives with its design constraints. It also reduces crossover distortion due to DG MOSFET instead of BJTs and MOSFETs in the class-B power amplifier. This is a low-power device for the mA range using SiO2 as a dielectric material.

APA, Harvard, Vancouver, ISO, and other styles

40

Das, Sanat, Bibek Chettri, Prasanna Karki, Bhakta Kunwar, Pronita Chettri, and Bikash Sharma. "Impact of high-k metal oxide as gate dielectric on the certain electrical properties of silicon nanowire field-effect transistors: A simulation study." Facta universitatis - series: Electronics and Energetics 36, no. 4 (2023): 553–65. http://dx.doi.org/10.2298/fuee2304553d.

Full text

Abstract:

Standard Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are gaining prominence in low-power nanoscale applications. This is largely attributed to their proximity to physical and thermal limits, rendering them a compelling option for energy-efficient electronic devices. In this study, we hypothesized that the high-? HfO2 in a quasi-ballistic SiNW MOSFET acts as the gate dielectric. In this case, the data from the TCAD simulation and the model demonstrated exceptional agreement. The proposed model for a SiNW MOSFET with high-? HfO2 exhibits a consistently increasing drain current,

APA, Harvard, Vancouver, ISO, and other styles

41

Rahimo, Munaf. "Performance Evaluation and Expected Challenges of Silicon Carbide Power MOSFETs for High Voltage Applications." Materials Science Forum 897 (May 2017): 649–54. http://dx.doi.org/10.4028/www.scientific.net/msf.897.649.

Full text

Abstract:

This paper presents an overview of the main technical requirements of high voltage Silicon Carbide MOSFETs rated above 3300V when compared to the well-established requirements of Silicon IGBTs and diodes. Combined with a performance evaluation of existing 3300 V SiC MOSFET prototypes from ROHM, the paper will discuss the benefits and challenges facing these devices for targeting mainstream and future topologies employed in high power applications such as those in grid systems, railway traction and industrial drives. The paper will also attempt to provide an outlook into potential development t

APA, Harvard, Vancouver, ISO, and other styles

42

Chen, Cheng-Po, Reza Ghandi, Liang Yin, et al. "500°C Silicon Carbide MOSFET-Based Integrated Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000072–75. http://dx.doi.org/10.4071/hitec-tp14.

Full text

Abstract:

In this work silicon carbide MOSFET based integrated circuits such as operational amplifier. 27-stage ring oscillator and CMOS-based inverter have been designed, fabricated and successfully tested at high temperatures. Silicon carbide MOSFETs remained fully operational from room temperature to 500°C with stable I-V characteristics. Also 27-stage ring oscillator, operational amplifier and CMOS inverter tested and shown to be functional up to 500°C, with relatively small performance change between 300°C and 500°C. High temperature reliability evaluation of these circuits demonstrate stable opera

APA, Harvard, Vancouver, ISO, and other styles

43

Sato, Shinji, Fumiki Kato, Hidekazu Tanisawa, et al. "Development of a High-Speed Switching Silicon Carbide Power Module." Materials Science Forum 963 (July 2019): 864–68. http://dx.doi.org/10.4028/www.scientific.net/msf.963.864.

Full text

Abstract:

We developed a silicon carbide (SiC) power module that can switch large currents at high speed. The withstand voltage of this power module is 1200 V, and two SiC MOSFETs are built-in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC MOSFET for high-speed switching. In this study, switching at 270 A (a current density of 1000 A/cm 2 or more for the SiC MOSFET) was performed to evaluate this module. The turn-off switching time tf was ~10 ns, and the maximum dv/dt was 80 kV/us. Furthermore, this re

APA, Harvard, Vancouver, ISO, and other styles

44

Umegami, Hirokatsu, Toshikazu Harada, and Ken Nakahara. "Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC." World Electric Vehicle Journal 14, no. 4 (2023): 112. http://dx.doi.org/10.3390/wevj14040112.

Full text

Abstract:

The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) and three types of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under a worldwide harmonized light vehicles test cycle (WLTC). SiC MOSFETs showed higher performance than Si IGBT regardless of the motor type and test vehicles. In the case of driving an interior permanent magnet synchronous motor (IPMSM), the latest 4th generation SiC MOSFET (SiC-4G) in ROHM has the lowest inverter loss and energy consumpt

APA, Harvard, Vancouver, ISO, and other styles

45

Chanana, Ravi Kumar. "A Simple Formula to Estimate Electron Mobility in a MOSFET." Advances in Image and Video Processing 12, no. 5 (2024): 217–19. https://doi.org/10.14738/aivp.125.17649.

Full text

Abstract:

This research communication gives a simple formula to estimate electron mobility in a metal-oxide-semiconductor field-effect-transistor (MOSFET). The example semiconductor chosen is the 4H-polytype of the Silicon Carbide, oriented in two faces of (0001) and (1120). The MOSFETs fabricated on these epi-surfaces have dry thermally grown amorphous silicon dioxide. The semiconductor/oxide interface is annealed in nitric oxide (NO) to incorporate Nitrogen only at the interface that passivates the interface traps to give higher channel mobility. The estimated mobility is presented in Table 1.

APA, Harvard, Vancouver, ISO, and other styles

46

Wei, Xiaofeng, Hongxin Zhang, Lei Shu, et al. "Analysis of electromagnetic radiation characteristics under TID radiation effects of trench-gate SiC MOSFETs." Journal of Instrumentation 20, no. 04 (2025): P04005. https://doi.org/10.1088/1748-0221/20/04/p04005.

Full text

Abstract:

Abstract This article is focused on the electromagnetic radiation effects of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under total ionizing dose (TID) effect. A 650V trench-gate SiC MOSFET was selected as the experimental subject. The variations in the electronic characteristics of SiC MOSFETs were explained from the perspective of crystal defects. Furthermore, an analysis of the trends in the electromagnetic radiation characteristics of the device was conducted based on the changes in the electrical properties of SiC devices. A broad network model for

APA, Harvard, Vancouver, ISO, and other styles

47

Langpoklakpam, Catherine, An-Chen Liu, Yi-Kai Hsiao, Chun-Hsiung Lin, and Hao-Chung Kuo. "Vertical GaN MOSFET Power Devices." Micromachines 14, no. 10 (2023): 1937. http://dx.doi.org/10.3390/mi14101937.

Full text

Abstract:

Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Addi

APA, Harvard, Vancouver, ISO, and other styles

48

Liu, Xiyao. "Comparative Analysis of Characteristics and Application Fields of SiC and GaN MOS Tube." Highlights in Science, Engineering and Technology 111 (August 19, 2024): 438–44. https://doi.org/10.54097/9d262220.

Full text

Abstract:

The characteristics and application fields of silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect transistor (MOSEFT) and gallium nitride (GaN) MOSFET are compared and analyzed in this paper. SiC MOSFETs have advantages such as high melting point and thermal stability, high electron mobility, high breakdown field strength, low electron drift rate and high thermal conductivity. On the flip side, GaN MOSFETs are renowned for their lightning-fast switching speeds and efficient performance, making them suitable for a wide range of electronic systems. The investigation examined the structu

APA, Harvard, Vancouver, ISO, and other styles

49

Dang, Dinh Lam, Matthieu Urbain, and Stephane Rael. "Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling." Materials Science Forum 963 (July 2019): 592–95. http://dx.doi.org/10.4028/www.scientific.net/msf.963.592.

Full text

Abstract:

Silicon carbide (SiC) MOSFET features low on-resistance per area even at high temperatures compared to a silicon (Si) counterpart with the same voltage rating. However, SiC MOSFET exhibits a unique behavior over operating temperatures due to the presence of interface trap charges. The effect of temperature on the on-resistance of SiC MOSFET has been studied through experimental measurements at difference temperatures from - 30 °C to 150 °C. The results show that high contribution of channel resistance is the critical factor to determine the behavior of SiC MOSFET with temperature.

APA, Harvard, Vancouver, ISO, and other styles

50

Othman, Noraini, Mohd Khairuddin Md Arshad, Syarifah Norfaezah Sabki, and U. Hashim. "Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs on Suppression of Short-Channel Effects (SCEs): A Review." Advanced Materials Research 1109 (June 2015): 257–61. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.257.

Full text

Abstract:

This paper reviews the different UTBB SOI MOSFET structures and their superiority in suppressing short-channel effects (SCEs). As the gate length (Lg), buried oxide thickness (TBOX) and silicon thickness (Tsi) are scaled down, the severity of SCEs becomes significant. The different UTBB SOI MOSFET device structures introduced to suppress these SCEs are discussed. The effectiveness of these structures in managing the associated SCEs such as drain-induced barrier lowering (DIBL), subthreshold swing (SS) and off-state leakage current (Ioff) is also presented. Further evaluations are made on other

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!