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Dissertations / Theses on the topic 'Silicon nanocrystals'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Walters, Robert Joseph Atwater Harry Albert. "Silicon nanocrystals for silicon photonics /." Diss., Pasadena, Calif. : California Institute of Technology, 2007. http://resolver.caltech.edu/CaltechETD:etd-06042007-160130.

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2

Choi, Jonghoon. "Silicon nanocrystals biocompatible fluorescent nanolabel /." College Park, Md.: University of Maryland, 2008. http://hdl.handle.net/1903/8806.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2008.<br>Thesis research directed by: Dept. of Chemical and Biomolecular Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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3

Sgrignuoli, Fabrizio. "Silicon nanocrystals downshifting for photovoltaic applications." Doctoral thesis, Università degli studi di Trento, 2013. https://hdl.handle.net/11572/368025.

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In conventional silicon solar cell, the collection probability of light generated carries shows a drop in the high energy range 280-400nm. One of the methods to reduce this loss, is to implement nanometre sized semiconductors on top of a solar cell where high energy photons are absorbed and low energy photons are re-emitted. This effect, called luminescence down-shifter (LDS), modifies the incident solar spectrum producing an enhancement of the energy conversion efficiency of a cell. We investigate this innovative effect using silicon nanoparticles dispersed in a silicon dioxide matrix as acti

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4

Sgrignuoli, Fabrizio. "Silicon nanocrystals downshifting for photovoltaic applications." Doctoral thesis, University of Trento, 2013. http://eprints-phd.biblio.unitn.it/944/1/Assemblaggio.pdf.

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In conventional silicon solar cell, the collection probability of light generated carries shows a drop in the high energy range 280-400nm. One of the methods to reduce this loss, is to implement nanometre sized semiconductors on top of a solar cell where high energy photons are absorbed and low energy photons are re-emitted. This effect, called luminescence down-shifter (LDS), modifies the incident solar spectrum producing an enhancement of the energy conversion efficiency of a cell. We investigate this innovative effect using silicon nanoparticles dispersed in a silicon dioxide matrix as act

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5

Deng, Xin, and 鄧欣. "Positron studies of silicon and germanium nanocrystals embedded in silicon dioxide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41508749.

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6

Deng, Xin. "Positron studies of silicon and germanium nanocrystals embedded in silicon dioxide." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41508749.

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7

Schmidt, Jan-Uwe. "Synthesis of silicon nanocrystal memories by sputter deposition." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-28765.

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Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible wi

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8

Schmidt, Jan-Uwe. "Synthesis of silicon nanocrystal memories by sputter deposition." Forschungszentrum Rossendorf, 2005. https://hzdr.qucosa.de/id/qucosa%3A21703.

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Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible wi

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9

Ondič, Lukáš. "Silicon nanocrystals, photonic structures and optical gain." Thesis, Strasbourg, 2014. http://www.theses.fr/2014STRAE004/document.

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Les nanocristaux de Silicium (SiNCs) de taille inférieure à 5 nm sont des matériaux qui présentent une intense photoluminescence (PL) et capables d’amplification optique. Cette dernière propriété est un pré-requis à l’obtention d’émission stimulée sous pompage optique. Atteindre l’émission stimulé (et l’effet laser) à partir de nanostructures basées sur Si est d’un intérêt particulier dans le domaine de la photonique à base de silicium. Le but de ce travail était (i) d’étudier les propriétés optiques fondamentales de SiNCs, (ii) de concevoir et de réaliser un cristal photonique présentant une

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10

Brown, Samuel Lynn. "Silicon Nanocrystals| Optical Properties and Self-assembly." Thesis, North Dakota State University, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10790537.

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<p> Silicon nanocrystal’s (SiNCs) size dependent optical properties and nontoxic nature portend potential applications across a broad range of industries. With any of these applications, a thorough understanding of SiNC photophysics is desirable to tune their optical properties while optimizing quantum yield. However, a detailed understanding of the photoluminescence (PL) from SiNCs is convoluted by the complexity of the decay mechanisms, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond decays.</p><p> In this dissertation, a brief history

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11

Brown, Samuel. "Silicon Nanocrystals: Optical Properties and Self Assembly." Diss., North Dakota State University, 2018. https://hdl.handle.net/10365/27926.

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Silicon nanocrystal?s (SiNCs) size dependent optical properties and nontoxic nature portend potential applications across a broad range of industries. With any of these applications, a thorough understanding of SiNC photophysics is desirable to tune their optical properties while optimizing quantum yield. However, a detailed understanding of the photoluminescence (PL) from SiNCs is convoluted by the complexity of the decay mechanisms, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond decays. In this dissertation, a brief history of semiconductor n

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12

Deokar, Geetanjali. "Cubic-silicon carbide nanocrystals epitaxied on silicon : synthesis and growth mechanism." Paris 6, 2012. http://www.theses.fr/2012PA066176.

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Nous présentons une technique originale de synthèse de nanocristaux de carbure de silicium cubique (3C-SiC) épitaxiés sur silicium et les résultats de l’étude des mécanismes de croissance des cristaux dans ces conditions. La technique consiste à recuire à 1100°C sous CO2 des substrats de silicium monocristallin recouverts de silice (épaisseur de quelques nm à 250 nm). La caractérisation par microscopie électronique atteste de la formation de nanocristaux de 3C-SiC à l'interface SiO2/Si, épitaxiés sur silicium sans apparition de défauts macroscopiques. De plus, l’utilisation de techniques telle

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13

Schnabel, Manuel. "Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:da5bbb64-0bcd-4807-a9f3-4ff63a9ca98d.

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Tandem solar cells are potentially much more efficient than the silicon solar cells that currently dominate the market but require materials with different bandgaps. This thesis presents work on silicon nanocrystals (Si-NC) embedded in silicon carbide (SiC), which are expected to have a higher bandgap than bulk Si due to quantum confinement, with a view to using them in the top cell of a tandem cell. The strong photoluminescence (PL) of precursor films used to prepare Si-NC in SiC (Si-NC/SiC) was markedly reduced upon Si-NC formation due to simultaneous out-diffusion of hydrogen that passivate

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14

Laube, Jan [Verfasser], and Margit [Akademischer Betreuer] Zacharias. "Silicon nanostructures: from isolated nanocrystals to percolated networks." Freiburg : Albert-Ludwigs-Universität Freiburg, 2017. http://d-nb.info/1128037092/34.

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15

Rafiq, Muhammad Aftab. "Electron transport in grown silicon nanocrystals and nanochains." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614342.

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16

Angeloni, Sara <1993&gt. "Silicon nanocrystals tailored for bioimaging and energy conversion." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amsdottorato.unibo.it/9727/1/Angeloni_Sara_tesi.pdf.

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This thesis focus is the development of hybrid organic-inorganic systems based on Silicon Nanocrystals (SiNCs) with possible applications in the field of bioimaging and solar energy conversion. SiNCs were engineered thanks to the realization of a strong covalent Si-C bond on their surface, which allowed us to disperse them in different solvents with different final purpose. Chapter 1 introduces the basic properties of nanomaterials. Chapter 2 describes all the synthetic procedures to obtain the organic molecules-functionalized SiNCs. Chapter 3 illustrates an organic-inorganic antenna system ba

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17

Prtljaga, Nikola. "Silicon nanocrystals: from bio-imager to erbium sensitizer." Doctoral thesis, Università degli studi di Trento, 2012. https://hdl.handle.net/11572/368704.

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The work in this thesis has been centred on the light emitting properties of silicon nanocrystals and the possible applications of this particular material platform to various topics ranging from bio-imaging to erbium ion sensitization. Silicon nanocrystals as bio-imaging agent have been investigated by employing colloidal dispersion of individual silicon nanocrystals where surface properties could be controlled to a great extent. By using a suitable functionalization scheme, high quality hydrophilic luminescent nanoparticles were produced. Using the improvements in the physical coating, bio-i

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18

Prtljaga, Nikola. "Silicon nanocrystals: from bio-imager to erbium sensitizer." Doctoral thesis, University of Trento, 2012. http://eprints-phd.biblio.unitn.it/715/1/Silicon_nanocrystals_from_bio-imager_to_Er3%2B_sensitizer.pdf.

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The work in this thesis has been centred on the light emitting properties of silicon nanocrystals and the possible applications of this particular material platform to various topics ranging from bio-imaging to erbium ion sensitization. Silicon nanocrystals as bio-imaging agent have been investigated by employing colloidal dispersion of individual silicon nanocrystals where surface properties could be controlled to a great extent. By using a suitable functionalization scheme, high quality hydrophilic luminescent nanoparticles were produced. Using the improvements in the physical coating, bio-i

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19

Alagoz, Arif Sinan. "Synthesizing Germanium And Silicon Nanocrystals Embedded In Silicon Dioxide By Magnetron Sputtering Technique." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/3/12608604/index.pdf.

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Applications of semiconductor nanocrystal in electronics are promising. Various techniques were developed to synthesize and analyze semiconductor nanocrystals for integrated circuit applications. In this study, silicon and germanium nanocrystals were synthesized in silicon dioxide matrix by magnetron sputtering deposition and following high temperature furnace annealing. Multilayer and single layer samples were prepared by co-sputtering depositions. Transmission electron microscopy measurements were carried out to analyze annealing effects on nanocrystal size distribution, change in shape, den

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20

Scardera, Giuseppe ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Correlating structural and optical properties of silicon nanocrystals embedded in silicon nitride: An experimental study of quantum confinement for photovoltaic applications." Publisher:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2008. http://handle.unsw.edu.au/1959.4/41472.

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Silicon nanocrystals embedded in silicon nitride have received attention as promising materials for optoelectronic applications. More specifically, band gap engineering of novel materials based on silicon nanocrystals has been proposed for possible application in an all-silicon tandem solar cell within the field of `third generation' photovoltaics. Such an application would require nanocrystals to exhibit quantum confinement whereby the optical and electrical properties of a film could be tuned by controlling the size of these `quantum dots'. This thesis investigates the correlation between th

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21

Flynn, Christopher Richard ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Sputtering for silicon photovoltaics: from nanocrystals to surface passivation." Awarded by:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2009. http://handle.unsw.edu.au/1959.4/44686.

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Deposition of thin material films by sputtering is an increasingly common process in the field of silicon (Si)-based photovoltaics. One of the recently developed sputter-deposited materials applicable to Si photovoltaics comprises Si nanocrystals (NCs) embedded in a Si-based dielectric. The particular case of Si nanocrystals in a Silicon Dioxide (SiO2) matrix was studied by fabricating metal-insulator-semiconductor (MIS) devices, in which the insulating layer consists of a single layer of Si NCs in SiO2 deposited by sputtering (Si:NC-MIS devices). These test structures were subjected to impeda

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22

Zelenina, Anastasiya [Verfasser], and Margit [Akademischer Betreuer] Zacharias. "Silicon nanocrystals in various dielectric matrices: structural and optical properties." Freiburg : Universität, 2016. http://d-nb.info/1119717361/34.

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23

Miller, Joseph Bradley. "Optical Properties and Ensemble Characteristics of Size Purified Silicon Nanocrystals." Diss., North Dakota State University, 2014. https://hdl.handle.net/10365/27408.

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Nanotechnology is at the forefront of current scienti c research and nanocrystals are being hailed as the `arti cial' atoms of the 21st century. Semiconducting silicon nanocrystals (SiNCs) are prime candidates for potential commercial applications because of silicon's already ubiquitous presence in the semiconductor industry, nontoxicity and abundance in nature. For realization of these potential applications, the properties and behavior of SiNCs need to be understood and enhanced. In this report, some of the main SiNC synthesis schemes are discussed, including those we are currently ex

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24

Pringle, Todd Andrew. "Non-Thermal Plasma Synthesis of Luminescent Silicon Nanocrystals from Cylclohexasilane." Diss., North Dakota State University, 2019. https://hdl.handle.net/10365/31690.

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In this report we establish cyclohexasilane (CHS) as a reliable precursor for non-thermal plasma synthesis of high quality photoluminescent silicon nanocrystals (SiNCs). We demonstrate that this synthesis approach can produce high quality, size tunable silicon quantum dots with quantum yields exceeding 60% as synthesized (subsequent work in our group has measured over 70% quantum yield after density gradient ultracentrifugation size purification).After a brief background on non-thermal plasma synthesis, the characterization methods used in this study, and an overview of CHS, we report at lengt

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25

Wilkinson, Andrew Richard. "The optical properties of silicon nanocrystals and the role of hydrogen passivation /." View thesis entry in Australian Digital Program, 2006. http://thesis.anu.edu.au/public/adt-ANU20060202.111537/index.html.

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26

Ruhge, Forrest. "EFFECT OF GERMANIUM DOPING ON ERBIUM SENSITIZATION IN THE ERBIUM DOPED SILICON RICH SILICA MATERIAL SYSTEM." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2933.

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The continued size reduction in electronic integrated circuits has lead to a demand for on-chip high-bandwidth and low loss communication channels. Optical interconnects are considered an essential addition to the silicon electronics platform. A major challenge in the field of integrated Si photonics is the development of cost effective silicon compatible light sources. This thesis investigates the sensitization of group IV doped silica films emitting at 1.535μm for applications as silicon compatible light sources. Thin erbium-doped silica films containing excess silicon and germanium wer

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27

Kaleli, Buket. "Towards Silicon Based Light Emitting Devices: Photoluminescence From Terbium Doped Silicon Matrices With Or Without Nanocrystals." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/3/12610614/index.pdf.

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In this study, silicon (Si) rich silicon dioxide (SiO2) films and terbium (Tb) embedded in three different Si containing films has been produced by e-beam evaporation and magnetron sputtering techniques. Post deposition annealing was done for different temperatures and durations to study its effect on both Si nanocrystal formation and Tb luminescence. It was verified by X-ray diffraction technique (XRD) that Si nanocrystals were formed in Si rich matrices. Energy dispersive X-ray (EDS) spectroscopy analysis was carried out to determine the relative concentrations of the atoms inside the produc

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28

Wilkinson, Andrew Richard, and arw109@rsphysse anu edu au. "The Optical Properties of Silicon Nanocrystals and the Role of Hydrogen Passivation." The Australian National University. Research School of Physical Sciences and Engineering, 2006. http://thesis.anu.edu.au./public/adt-ANU20060202.111537.

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This thesis examines the optical properties of nanoscale silicon and the sensitization of Er with Si. In this context, it predominantly investigates the role of defects in limiting the luminescence of Si nanocrystals, and the removal of these defects by hydrogen passivation. The kinetics of the defect passivation process, for both molecular and atomic hydrogen, are studied in detail. Moreover, the optical absorption of Si nanocrystals and the effect of annealing environment (during nanocrystal synthesis) on the luminescence are investigated. The effect of annealing temperature and hydrogen p

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29

Kulakci, Mustafa. "Silicon Nanocrystals Embedded In Sio2 For Light Emitting Diode (led) Applications." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606557/index.pdf.

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In this study, silicon nanocrystals (NC) were synthesized in silicon dioxide matrix by ion implantation followed by high temperature annealing. Annealing temperature and duration were varied to study their effect on the nanocrystal formation and optical properties. Implantation of silicon ions was performed with different energy and dose depending on the oxide thickness on the silicon substrate. Before device fabrication, photoluminescence (PL) measurement was performed for each sample. From PL measurement it was observed that, PL emission depends on nanocrystal size determined by the paramete

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30

Von, Treskow Carl. "Unaltered Blinking in Single Silicon Oxidized Nanocrystals when X-ray Irradiated." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-201713.

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Quantum dots exhibit a range of interesting and useful properties linked to their elemental composition, crystal structure, size and shape. Two such properties is the work function and blinking frequency. Tests on several different quantum dot types have shown that x-ray radiation will alter these factors; with increasing doses "bleaching" the dots and making them permanently dark. There are several competing theories to explain this behavior and a lot of materials systems that have not been investigated yet. One such unexplored material is oxidized silicon NCs. This work found no consistent c

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31

Locritani, Mirko <1983&gt. "Development of synthetic methods of silicon nanocrystals functionalized with photoactive molecules." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amsdottorato.unibo.it/7016/1/Locritani_Mirko_tesi.pdf.

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The thesis is focused on the development of a method for the synthesis of silicon nanocrystals with different sizes, narrow size distribution, good optical properties and stability in air. The resulting silicon nanocrystals have been covalently functionalized with different chromophores with the aim to exploit the new electronic and chemical properties that emerge from the interaction between silicon nanocrystal surface and ligands. The purpose is to use these chromophores as light harvesting antennae, increasing the optical absorption of silicon nanocrystals. Functionalized silicon nanocr

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32

Locritani, Mirko <1983&gt. "Development of synthetic methods of silicon nanocrystals functionalized with photoactive molecules." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amsdottorato.unibo.it/7016/.

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The thesis is focused on the development of a method for the synthesis of silicon nanocrystals with different sizes, narrow size distribution, good optical properties and stability in air. The resulting silicon nanocrystals have been covalently functionalized with different chromophores with the aim to exploit the new electronic and chemical properties that emerge from the interaction between silicon nanocrystal surface and ligands. The purpose is to use these chromophores as light harvesting antennae, increasing the optical absorption of silicon nanocrystals. Functionalized silicon nanocr

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33

Tengattini, Andrea. "Erbium and Silicon Nanocrystals based Light Emitting Devices for lightwave circuits." Doctoral thesis, Università degli studi di Trento, 2013. https://hdl.handle.net/11572/368417.

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The thesis is divided into two topics: silicon nanocrystals based light emitting devices and erbium doped silicon nanocrystals devices. I have studied silicon nanocrystals based devices. Here I have demonstrated the role of the different injection mechanisms in determining the efficiency of the device. I have studied single and multilayer structures, both in diode or transistor configurations. Lastly, the time dependence of the electroluminescence has been studied, clarifying the role of bipolar or unipolar injection in these structures. On the second part of my thesis, I have studied Er and s

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34

Tengattini, Andrea. "Erbium and Silicon Nanocrystals based Light Emitting Devices for lightwave circuits." Doctoral thesis, University of Trento, 2013. http://eprints-phd.biblio.unitn.it/1091/1/PhD_Thesis_Andrea_Tengattini.pdf.

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The thesis is divided into two topics: silicon nanocrystals based light emitting devices and erbium doped silicon nanocrystals devices. I have studied silicon nanocrystals based devices. Here I have demonstrated the role of the different injection mechanisms in determining the efficiency of the device. I have studied single and multilayer structures, both in diode or transistor configurations. Lastly, the time dependence of the electroluminescence has been studied, clarifying the role of bipolar or unipolar injection in these structures. On the second part of my thesis, I have studied Er and

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35

Spooner, Marc, and mas109@rsphysse anu edu au. "The Application and Limitations of PECVD for Silicon-based Photonics." The Australian National University. Research School of Physical Sciences and Engineering, 2006. http://thesis.anu.edu.au./public/adt-ANU20070315.043442.

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This thesis presents results on the applications and limitations of plasma enhanced chemical vapour deposition for silicon-based photonics, with an emphasis on optical microcavities for the control of light emission from silicon nanocrystals. ¶ Silicon nanocrystals were formed by precipitation and growth within Si-rich oxide layers (SiOx) deposited by plasma enhanced chemical vapour deposition. The films were found to exhibit strong room temperature photoluminescence, with the optimum emission depending on the composition and processing of the films. The strongest emission was achieved for fi

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36

Seregin, Vladimir Victor. "Part I, Fabrication and surface modification of composite biomaterials based on silicon and calcium disilicide Part II, Synthesis and characterization of erbium doped silicon nanocrystals encapsulated by aluminum and zinc oxides /." Fort Worth, Tex. : Texas Christian University, 2006. http://etd.tcu.edu/etdfiles/available/etd-04252006-145309/unrestricted/seregin.pdf.

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Mitra, Somak. "Nanoscale engineering for the integration of silicon nanocrystals in solar cells nanoarchitectures." Thesis, Ulster University, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.629076.

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One of the main contributions of this thesis is the improvement on the overall performance of the solar cells due to the impact of the surface engineering of silicon nanocrystals (SiNCs) and also down conversion of high energy photons by SiNCs. It is demonstrated that surface engineering techniques by using microplasma processing improve the capabilities of the SiNCs for different opto-electronic applications and in particular for solar cells. Surface engineering of SiNCs in water shows long term stability, which could allow the deployment of SiNCs for a wider range of applications. Microplasm

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Khavari, Faraz. "Towards monodisperse Silicon Nanocrystals: density gradient centrifugation applied on commercial gold nanoparticles." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-186172.

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The application of silicon nanocrystals as non-toxic bio-labels and downconverters requires their uniform size distribution in order to minimize the inhomogeneous broadening of the photoluminescence peak. In this thesis, we set the basis for their size-separation via the density-gradient centrifugation method. To be more precise, we successfully apply this technique to separate 5 and 10 nm gold nanoparticles from an ensemble by using an engineered medium layer stack. In addition, we explain how atomic force microscopy is used to measure the size of the nanoparticles, with a particular attentio

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39

Spooner, Marc. "The application and limitations of PECVD for silicon-based photonics /." View thesis entry in Australian Digital Program, 2005. http://thesis.anu.edu.au/public/adt-ANU20070315.043442/index.html.

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40

Alsharif, Naif Hazza S. "In vitro application of alkyl-capped silicon nanocrystals for investigation of cell behavior." Thesis, University of Newcastle Upon Tyne, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.525064.

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41

Seyhan, Ayse. "Photoluminescence Properties Of Si Nanocrystals Embedded In Sio2 Matrix." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/3/12611750/index.pdf.

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This thesis examines the luminescence properties of nanoscale silicon (Si) by using spectroscopic techniques. Since the development of new optical devices requires understanding light emission mechanism optical spectroscopy has become more important tool in the analysis of these structures. In this thesis, Si nanocrystals embedded in SiO2 matrix will be studied. Photoluminescence (PL) and Time-resolved photoluminescence spectroscopy (TRPL) have been used to detect the light emission in UV-Vis-NIR range. Experiments have been performed in the temperature range 10-300 K. PL is sensitive to impur

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42

Danko, V. A., P. E. Shepeliavyi, K. V. Michailovska, and I. Z. Indutnyi. "Absorption Cross Section and Photoluminescence Lifetime of Silicon-Based Light-Emitting nc-Si-SiOx Structures." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35011.

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The spectral dependence of the photoluminescence (PL) decay kinetics at room temperature have been studied in porous nc-Si-SiOx nanostructures. Investigated samples were obtained by oblique evaporation of SiO with following annealing at 975 C in vacuum and treating in the HF vapor at 50 C. PL decay in these structures described by a stretched exponential and the average lifetime of the PL decrease exponentially with increasing energy of photons. PL lifetime values is in microsecond range that point out on phonon participation in radiative recombination. Dispersion parameter do not depend

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Vlasukova, L., F. Komarov, O. Milchanin, I. Parkhomenko, and J. Zuk. "Structural Peculiarities of A3B5 Nanocrystals Created in Si by Ion-Beam Synthesis." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35436.

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We reported the structure peculiarities of nanocrystals formed in Si by means of high-fluence implantation at 25 and 500 °С followed by rapid thermal annealing (RTA). The structure of implanted samples has been investigated by means of transmission electron microscopy (TEM). The crystalline nature of the precipitates is proved by the Moiré fringe patterns presence in the TEM images. The Moiré fringe distance (Moiré period) is equal of 1.8 nm for small precipitates. This experimental value coincides with the calculated one for crystalline InAs. It is noted a Moiré period increasing in the

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Beri, Deski [Verfasser], and F. [Akademischer Betreuer] Breitling. "Surface functionalization of silicon nanocrystals via a microwave reactor / Deski Beri ; Betreuer: F. Breitling." Karlsruhe : KIT-Bibliothek, 2021. http://d-nb.info/1225401216/34.

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Morselli, Giacomo <1994&gt. "Synthesis and electronic properties of luminescent silicon nanocrystals and copper indium sulphide quantum dots." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2022. http://amsdottorato.unibo.it/10175/1/Thesis_Morselli%20G.pdf.

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In the last decades, nanomaterials, and in particular semiconducting nanoparticles (or quantum dots), have gained increasing attention due to their controllable optical properties and potential applications. Silicon nanoparticles (also called silicon nanocrystals, SiNCs) have been extensively studied in the last years, due to their physical and chemical properties which render them a valid alternative to conventional quantum dots. During my PhD studies I have planned new synthetical routes to obtain SiNCs functionalised with molecules which could ameliorate the properties of the nanoparticle.

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Smith, Kristen Colleen. "Surface processes ruthenium film growth, silicon nanocrystal synthesis, and methylene partial oxidation /." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3035980.

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Greben, M. V., F. F. Komarov, L. A. Vlasukova1, O. V. Milchanin, A. V. Mudryi, and I. N. Parkhomenko. "The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35169.

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Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb ions in single crystalline Si (100), followed by thermal treatment are investigated. In the first group of samples named Si / GaSb the implantation of Ga ions was followed by Sb implantation, whereas in the second group of samples named Si / SbGa with increased by factor 1.4 ion fluence the order of implantation was inverted. The presence of nanocrystals in both kinds of samples was proved by TEM and RS experiments. Low-temperature PL measurements show a PL broad band in the region at 0.75-1.

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Abualnaja, Khamael. "An investigation of the effect of metal nanoparticles on the optical properties of silicon nanocrystals." Thesis, University of Newcastle upon Tyne, 2015. http://hdl.handle.net/10443/3108.

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This thesis describes the characterization of two types of nanocrystalline material i.e. alkylated silicon nanocrystals (C11-SiNCs) and commercial silicon nanocrystals (SiNCs). The research presented throughout this work also shows that the optical properties of silicon nanocrystals can be affected by erbium ions and metal nanoparticles. The main goal of this characterization is to observe the energy transfer from the excited state of SiNCs to the erbium for optical fiber technology applications. Also, SiNCs have applications in biology as fluorescent labels. Porous silicon was prepared succes

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Pinto, Emilio Sergio Marins Vieira. "Sintese e caracterização de nanocristais de Ge por LPCVD." [s.n.], 2006. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259199.

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Orientador: Ioshiaki Doi<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação<br>Made available in DSpace on 2018-08-08T01:34:23Z (GMT). No. of bitstreams: 1 Pinto_EmilioSergioMarinsVieira_M.pdf: 2911838 bytes, checksum: d0f5e53a1aaa54372eda0b11016226b6 (MD5) Previous issue date: 2006<br>Resumo: Nesta dissertação estudamos a obtenção de nanocristais (NCs) de Ge pela técnica de LPCVD (Low Pressure Chemical Vapor Deposition), buscando otimizar as condições de processo que resultassem em NCs com características de tamanho, densidade por

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Wutzler, René. "Integration of III-V compound nanocrystals in silicon via ion beam implantation and flash lamp annealing." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231433.

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The progress in device performance of modern microelectronic technology is mainly driven by down-scaling. In the near future, this road will probably reach a point where physical limits make even more down-scaling impossible. The substitution of single components materialwise over the last decades, like high-k dielectrics or metal gates, has been a suitable approach to foster performance improvements. In this scheme, the integration of high-mobility III-V compound semiconductors as channel materials into Si technology is a promising route to follow for the next one or two device generations. I

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