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Dissertations / Theses on the topic 'Silicon nitride'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Razzell, Anthony Gordon. "Silicon carbide fibre silicon nitride matrix composites." Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110559/.

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Silicon carbide fibre/silicon nitride matrix composites have been fabricated using the reaction bonded silicon nitride (RBSN) and sintered reaction bonded silicon nitride (SRBSN) processing routes. A filament winding and tape casting system was developed to produce sheets of parallel aligned fibres within a layer of green matrix ('prepreg') which were cut, stacked and hot pressed to form a plate. This was nitrided and (in the case of SRBSN matrix composites) hot pressed at 1700°C to density the matrix. The magnesia (MgO) and the yttria/alumina (Y2O3/AI2O3) additive SRBSN systems were investiga

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2

Durham, Simon J. P. "Carbothermal reduction of silica to silicon nitride powder." Thesis, McGill University, 1989. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=74221.

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The processing conditions for carbothermal reduction of silica to silicon nitride was found to be sensitive to several key processing parameters: namely the intimacy of mixing of carbon and silica, the temperature, the specific high surface area of carbon, the nitrogen gas purity and the action of the nitrogen gas passing through the reactants.<br>Sol-gel processing was found to provide superior mixing conditions over dry mixing, which allowed for complete conversion to silicon nitride at optimum carbon:silica ratios of 7:1. The ideal reaction temperature was found to be in the range of 1500$

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3

Hadian, Ali Mohammad. "Joining of silicon nitride-to-silicon nitride and to molybdenum for high-temperature applications." Thesis, McGill University, 1993. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=41370.

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The evolution of advanced ceramic materials over the past two decades has not been matched by improvements in ceramic joining science and technology, particularly for high temperature applications. Of the techniques being evaluated for joining ceramics, brazing has been found to be the simplest and most promising method of fabricating both ceramic/ceramic and ceramic/metal joints. A key factor in ceramic brazing is wetting of the ceramic by the filler metal.<br>This study deals with the application of brazing for the fabrication of $ rm Si sb3N sb4/Si sb3N sb4$ and $ rm Si sb3N sb4/Mo$ joints

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4

Yi, Jae Hyung. "Silicon rich nitride for silicon based laser devices." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44315.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.<br>Page 214 blank.<br>Includes bibliographical references.<br>Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light emitter and the limited understanding of tli~ excitation mechanism of Er in dielectric media by optical and electrical pumping methods impedes the progress of the research activities in this area. Silicon ric

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5

Li, Wenyu. "The fabrication of silicon nitride-titanium nitride composite materials." Thesis, University of Leeds, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305875.

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6

Saxena, Pawan. "Slip casting of silicon nitride." Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=56974.

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Slip casting is a well established technique for the manufacture of traditional ceramic bodies, such as clays and whitewares. It combines complex shaping with high green densities, resulting in low shrinkage and good densification behaviour.<br>This method, however, has received little attention in the field of engineering ceramics especially with regard to silicon nitride. Commercial fabrication of silicon nitride, a major contender for high temperature applications due to its excellent thermomechanical properties, has been confined to hot pressing. This is an expensive process and has geomet

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7

Ovri, J. E. O. "Diametral-compression of silicon nitride." Thesis, University of Manchester, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378585.

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8

Knight, Patrick J. "Nitride formation at silicon surfaces." Thesis, University of Southampton, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238903.

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9

Rockett, Chris H. "Flexural Testing of Molybdenum-Silicon-Boron Alloys Reacted from Molybdenum, Silicon Nitride, and Boron Nitride." Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16293.

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MoSiB alloys show promise as the next-generation turbine blade material due to their high-temperature strength and oxidation resistance afforded by a protective borosilicate surface layer. Powder processing and reactive synthesis of these alloys has proven to be a viable method and offers several advantages over conventional melt processing routes. Microstructures obtained have well-dispersed intermetallics in a continuous matrix of molybdenum solid-solution (Mo-ss). However, bend testing of pure Mo and Mo-ss samples has shown that, while the powder processing route can produce ductile Mo meta

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10

Martinelli, Antonio Eduardo. "Diffusion bonding of silicon carbide and silicone nitride to molybdenum." Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=40191.

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This study focuses on various aspects of solid-state diffusion bonding of two ceramic-metal combinations, namely: silicon carbide-molybdenum (SiC-Mo), and silicon nitride-molybdenum (Si$ rm sb3N sb4$-Mo). Single SiC-Mo and $ rm Si sb3N sb4$-Mo joints were produced using hot-uniaxial pressing. The microstructure of the resulting interfaces were characterized by image analysis, scanning electron microscopy (SEM), electron probe micro-analysis (EPMA), and X-ray diffraction (XRD). The mechanical properties of the joints were investigated using shear strength testing, depth sensing nanoindentation,

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11

Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface

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12

Tatli, Zafer. "Silicon nitride and silicon carbide fabrication using coated powders." Thesis, University of Newcastle Upon Tyne, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394640.

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13

Turan, Servet. "Microstructural characterisation of silicon nitride-silicon carbide particulate composites." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627653.

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14

Quinn, R. W. "Machining damage in silicon nitride ceramics." Thesis, University of Surrey, 1992. http://epubs.surrey.ac.uk/843210/.

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This Thesis is primarily concerned with the effects of abrasive machining (diamond grinding) and diamond indentation on the fracture properties of a range of silicon nitride materials. Test specimens machined to surface finishes representative of those found on Aero Gas Turbine components were produced for Modulus of Rupture (MOR) testing, and variations in the fracture strengths were assessed. Optical and Scanning Electron Microscopy (SEM) were performed as a means of identifying the nature of the defects found within these materials. Having determined the dependence of strength and reliabili

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15

Turner-Adomatis, Bonnie L. "Shock-enhanced sintering of silicon nitride." Thesis, Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/18905.

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16

Muscat, Daniel. "Silicon nitridesilicon nitride whisker-reinforced composites." Thesis, McGill University, 1990. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=60102.

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One of the major setbacks of ceramic materials is their inherent brittle nature which often leads to catastrophic failure, especially under impact and tensile stress conditions. Whisker-reinforcement of ceramic matrices has been shown to be an effective way of increasing toughness. However, the hot-pressing techniques being used at present are expensive. Si$ sb3$N$ sb4$ is a major contender for high temperature application, mainly due to its excellent mechanical, chemical and thermal properties.<br>In this work Si$ sb3$N$ sb4$ whiskers have been incorporated into a Si$ sb3$N$ sb4$ matrix and d

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17

Wang, W. "Rolling contact fatigue of silicon nitride." Thesis, Bournemouth University, 2010. http://eprints.bournemouth.ac.uk/17764/.

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Silicon Nitride has traditionally been used as rolling contact bearing material owing to its superior performance compared to bearing steels. Its successful application as a bearing element has led to the development of Silicon Nitride in other rolling contact applications in the automotive industry and the power industry. However, a major limitation of its wider application is its high material and machining cost, especially the cost associated with the finishing process. In the present study, a low cost sintered and reaction-bonded Silicon Nitride is used to study the surface machining effec

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18

Pettersson, Maria. "Silicon nitride for total hip replacements." Doctoral thesis, Uppsala universitet, Tillämpad materialvetenskap, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-247800.

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For more than 50 years total hip replacements have been a common and successful procedure to increase patient mobility and quality of life. The 10-year implant survival rate is 97.8%. However, for longer implantation times there are limitations linked to the negative biological response to wear and corrosion products from the currently used biomaterials. In this thesis silicon nitride (SiNx) coatings were evaluated for use in total hip replacements, on the articulating bearing surface and modular taper connections. Homogeneous, dense SiNx coatings were deposited using reactive high power impul

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19

Karecki, Simon Martin. "Alternative chemistries for etching of silicon dioxide and silicon nitride." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/43304.

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Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.<br>Includes bibliographical references (p. 123-126).<br>by Simon Martin Karecki.<br>M.S.

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20

Pooley, David Martin. "Vertical silicon single-electron devices with silicon nitride tunnel barriers." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621302.

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21

Kim, Hyoun-Ee. "Gaseous corrosion of silicon carbide and silicon nitride in hydrogen /." The Ohio State University, 1987. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487327695622538.

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22

Kurra, Sri Harsha. "Nondestructive testing for finding out the displacement of crack in silicon nitride." To access this resource online via ProQuest Dissertations and Theses @ UTEP, 2009. http://0-proquest.umi.com.lib.utep.edu/login?COPT=REJTPTU0YmImSU5UPTAmVkVSPTI=&clientId=2515.

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23

Wiseman, Charles R. "Production of silicon and silicon nitride powders by a flow reactor." Ohio : Ohio University, 1988. http://www.ohiolink.edu/etd/view.cgi?ohiou1182874102.

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24

Grove, Richard Sebastian. "Processing and properties of silicon and silicon nitride injection moulding formulations." Thesis, Brunel University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311263.

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25

Hepburn, A. R. "Charge trapping instabilities in amorphous silicon/silicon nitride thin film transistors." Thesis, Open University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381605.

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26

Bae, Dohyun. "Sputtering fabrication of silicon nitride and silicon oxide based dichroic mirrors." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/98645.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2015.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (page 37).<br>Thin films in optical materials utilize the properties of multiple materials to obtain specific and fine-tuned transmission, absorption and reflectance at wavelengths. Dichroic mirrors exhibit very different reflectance and transmission rates at certain cut-off wavelengths, which can be adjusted using changes in layer materials and thickness. This is due to constructive optical interference betw

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27

Morgan, B. A. "Current transport in hydrogenated amorphous silicon nitride." Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/842874/.

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A defect band is formed in hydrogenated amorphous silicon nitride (a-SiNx:H) due to current stressing of the material. This gives rise to an increase in conductivity, referred to as current induced conductivity. This thesis investigates the current transport mechanisms that occur in the induced defect band, by comparing the temperature dependence of the conductivity of several sets of a-SiNx:H thin film diodes. These sets were systematically current stressed to different levels with one set remaining unstressed. Samples with energy gaps of 2.06 eV and 2.28 eV were considered. We show that arou

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28

Trivedi, Dhruti Mayur. "Fabrication and characterization of silicon nitride nanopores." Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/7288.

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The fabrication of synthetic nanopores with dimensional and electrical properties similar to organic alpha-hemolysin (α-HL) nanopores is required for the development of a novel genotyping device. This thesis details the development of synthetic nanopores with diameters below 5 nm fabricated by sputtering a free standing silicon nitride membrane using a tightly focused electron beam. Nanometer control is achieved with sputtering rates of 0.5 – 0.75 nm/s. This technique is further extended to fabricate a proof-of-concept array of 44 sub-5 nm nanopores in a single membrane to enable the detectio

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29

Zarnon, Linda Christina. "Grain boundary control of silicon nitride ceramics." Thesis, McGill University, 1989. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=55655.

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30

Lemus-Ruiz, Jose. "Diffusion bonding of silicon nitride to titanium." Thesis, McGill University, 2000. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=37760.

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The use of ceramic has gradually increased over the past few years. Si3N4 is one of the most important ceramics used as structural material for high temperature applications. The practical use of advanced ceramics depends on the reliability of ceramic/metal joining techniques and the properties of the resulting interfaces. This work focuses on various aspects of diffusion bonding of Si3N4 to Ti as well as on the use of Ti-foil interlayer during the self-joining of Si3N4. Si3N4/Ti and Si3N 4/Ti-foil/Si3N4 combinations were diffusion joined by hot-uniaxial pressing and the microstructural charac

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31

Matsushita, Yoshiaki. "Diffusion bonding of silicon nitride to metals." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333487.

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32

Briggs, D. J. E. "The creep behaviour of silicon nitride ceramics." Thesis, Swansea University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.636155.

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The creep properties of silicon nitride ceramics have usually been discussed by reference to the dependence of the secondary creep rate (εs) on stress (σ) and temperature (T) using a power law relationship of the form:-hskip 0.5cm εs = Aσn(-Q_c/RT) where 'A' and 'n' are constants and 'Q_c' is the activation energy for creep. Studies show, however, that the creep properties of ceramics can not be adequately characterised by measurement of only the secondary creep rate. The evidence indicates that traditional approaches to creep should be abandoned in favour of a new method of analysing creep da

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33

Murakami, T. "Predicting creep behaviour of silicon nitride ceramics." Thesis, Swansea University, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.638280.

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34

Rahman, I. Ab. "Production of silicon nitride from rice husks." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382871.

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35

Alhabill, Fuad N. F. "Dielectric behaviour of silicon nitride epoxy nanocomposites." Thesis, University of Southampton, 2017. https://eprints.soton.ac.uk/419656/.

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Nanodielectric materials have potential to meet the requirements of next generation insulation technology by offering attractive electrical, mechanical and/or thermal properties. A precise understanding of the factors and mechanisms that control the properties of nanocomposites could enable the tailoring and engineering of these composites to meet the requirements of a particular application. The surface chemistry of nanoparticles and their interactions with the base material are very important factors, among others, such as moisture adsorption and particle dispersion, which affect the electri

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36

Hassan, Shereen Hassan Mohamed Gaber. "Sol-gel preparation of silicon nitride materials." Thesis, University of Southampton, 2009. https://eprints.soton.ac.uk/72951/.

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Sol-gel techniques are mainly used for oxides but are of growing interest for non-oxide materials. They allow formation of solid materials through gelation of precursor solutions and can be used to control composition and to produce a large number of useful morphologies such as films, monoliths, aerogels, foams and materials with ordered pores on various length scales. Often the synthesis of non-oxide materials using sol-gel methods has focused on producing powders for applications such as catalysis, where controlled porosity and basic catalytic sites are the point of interest. In this thesis,

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37

Nel, Jacqueline Margot. "Processing and properties of silicon nitride ceramics." Master's thesis, University of Cape Town, 1993. http://hdl.handle.net/11427/21682.

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Bibliography: pages 129-139.<br>Silicon nitride, Si₃N₄, ceramics were produced using either silicon or silicon nitride powder. The silicon was reaction bonded in nitrogen atmosphere to form reaction bonded Si₃N₄,which was then sintered between 1700°C and 1800°C to form a dense Si₃N₄ ceramic. The silicon nitride powder compacts were also sintered between 1700°C and 1800°C. In order to achieve densification Y₂O₃-A1₂O₃ additive combination was used in both processing routes. The physical and mechanical properties of the Si₃N₄ materials was found to be dependent on the processing conditions. The p

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38

Matović, Branko. "Low temperature sintering additives for silicon nitride." [S.l. : s.n.], 2003. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10806387.

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39

Luginbühl, Reto. "Photobonding of biomacromolecules to Silicon Nitride surfaces /." [S.l.] : [s.n.], 1997. http://www.ub.unibe.ch/content/bibliotheken_sammlungen/sondersammlungen/dissen_bestellformular/index_ger.html.

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40

Yang, Yijun. "Supercontinuum generation in the silicon nitride platform." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPAST163.

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De nos jours, diverses sources de lumière dans différentes gammes de longueurs d’onde jouent un rôle important tant pour les industries modernes que dans la vie quotidienne des gens, notamment dans les domaines du laser, de la détection, du traitement médical, de la biologie, des télécommunications, etc. La voie cruciale vers la génération de lumière dans une gamme de longueurs d’onde ciblée repose sur l’optique non linéaire, qui se concentre sur l’interaction de la lumière intense avec la matière, entraînant une con- version de fréquence. Avec le réchauffement climatique au centre des préoccu

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41

Fallqvist, Amie. "Aberration-Corrected Analytical Electron Microscopy of Transition Metal Nitride and Silicon Nitride Multilayers." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-102176.

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Two multilayer thin films have been studied: TiN/SiNx and ZrN/SiNx. A double-corrected transmission electron microscope (TEM) was utilized for imaging and spectroscopy. Imaging was carried out in scanning mode (STEM) for all samples. Energy dispersive X-ray (EDX) spectrometry was used for chemical mapping of the ZrN/SiNx samples and electron energy loss spectrometry (EELS) for atomic coordination of the nitrogen in the TiN/SiNx samples. In the TiN/SiNx multilayer the structure of the epitaxially stabilized cubic SiNx was investigated. The high-resolution STEM images were compared with image si

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42

Zhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.

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43

McCann, Michelle Jane, and michelle mccann@uni-konstanz de. "Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride." The Australian National University. Faculty of Engineering and Information Technology, 2002. http://thesis.anu.edu.au./public/adt-ANU20040903.100315.

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This thesis discusses the growth of thin-film silicon layers suitable for solar cells using liquid phase epitaxy and the behaviour of oxide LPCVD silicon nitride stacks on silicon in a high temperature ambient.¶ The work on thin film cells is focussed on the characteristics of layers grown using liquid phase epitaxy. The morphology resulting from different seeding patterns, the transfer of dislocations to the epitaxial layer and the lifetime of layers grown using oxide compared with carbonised photoresist barrier layers are discussed. The second half of this work discusses boron doping of epit

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44

Sheldon, Brian William 1959. "The formation of reaction bonded silicon nitride from silane derived silicon powders." Thesis, Massachusetts Institute of Technology, 1989. http://hdl.handle.net/1721.1/14453.

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Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1989.<br>Includes bibliographical references (leaves 222-227).<br>by Brian William Sheldon.<br>Sc.D.

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45

Henry, Frédéric. "Caractérisation de décharges magnétron Ar/NH3 et Ar/H2/N2 pour la synthèse de films minces de nitrure de silicium." Doctoral thesis, Universite Libre de Bruxelles, 2011. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/209837.

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Lors de ce travail nous avons étudié la synthèse de nitrure de silicium en utilisant des décharges magnétron Ar/NH3 et Ar/H2/N2. Nous nous sommes intéressés particulièrement à la caractérisation de la décharge. Le paramètre de diagnostic le plus utilisé pour caractériser une décharge magnétron est la mesure de la tension de décharge, mais ces mesures ne donnent qu’une vue partielle du processus de pulvérisation même si le régime de pulvérisation peut être défini :métallique ou réactif. En effet, aucune information chimique ne peut être extraite des courbes de tension: d’autres techniques d’ana

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46

Jackson, Helen C. "Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures." Thesis, Air Force Institute of Technology, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3629786.

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<p> Silicon nitride passivation on AlGaN\GaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaN\GaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 M

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47

Plucknett, Kevin. "Hot isostatic pressing of silicon nitride based ceramics." Thesis, University of Warwick, 1990. http://wrap.warwick.ac.uk/37879/.

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Several techniques have been developed for the encapsulation, and subsequent hotisostatic pressing (HIPing), of silicon nitride (Si3N4) based ceramics. Green-state and densified billets of silicon nitride were vacuum encapsulated in either glass tube or powder. Glass powder encapsulation allows complex shaped ceramic pieces to be HIPed. A selection of silicon nitride compositions were HIPed to near-theoretical density (>97% T. D. ) after encapsulation in either Pyrex glass tube or powder. The silicon nitride compositions studied included single yttria (Y203) additive materials that cannot be d

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48

Liu, Junling. "Plasma spray deposition of silicon nitride composite coatings." Thesis, London South Bank University, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288111.

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49

Pugh, M. D. "Processing reaction bonded silicon nitride towards full density." Thesis, University of Leeds, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372578.

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50

Huang, Tzung-Shi. "Integration of III-nitride semiconductors with silicon technology." Thesis, University of Liverpool, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.400229.

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