Relevant bibliographies by topics / Silicon passive components

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Silicon passive components'

Author: Grafiati
Published: 31 May 2025
Last updated: 31 July 2025

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Journal articles on the topic "Silicon passive components"

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Liu, Kai, YongTaek Lee, HyunTai Kim, et al. "Passive Device Integration from Silicon Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 001967–89. http://dx.doi.org/10.4071/2010dpc-wp36.

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Passive components are indispensible parts used in electronics circuits for various functions, such decoupling, biasing, resonating, filtering, matching, transforming, etc. These passive components can be made on chips, or in PCBs, or in SMDs. SOC (system-on-chip) solutions where all passives are implemented may be long-term goals, but suffer high cost and long development cycle times at the time being. Making passive components embedded inside laminate substrates is limited on passive density. SMD solutions are by far the most popular approaches in the industry, and may still be dominant for
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Fainman, Yeshaiahu, D. Tan, S. Zamek, et al. "Passive and Active Nanophotonics." Advances in Science and Technology 82 (September 2012): 9–18. http://dx.doi.org/10.4028/www.scientific.net/ast.82.9.

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Dense photonic integration requires miniaturization of materials, devices and subsystems, including passive components (e.g., engineered composite metamaterials, filters, etc.) and active components (e.g., lasers, modulators, detectors). This paper discusses passive and active devices that recently have been demonstrated in our laboratory, including monolithically integrated short pulse compressor utilized with silicon on insulator material platform and design, fabrication and testing of nanolasers constructed using metal-dielectric-semiconductor resonators confined in all three dimensions.
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Pantellini, Alessio, Claudio Lanzieri, Antonio Nanni, et al. "GaN-on-Silicon Evaluation for High-Power MMIC Applications." Materials Science Forum 711 (January 2012): 223–27. http://dx.doi.org/10.4028/www.scientific.net/msf.711.223.

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Today microwave market has identified GaN-HEMT technology as a strategic enabling technology for next generation MMICs to be implemented in high performance RF sub-assemblies such as T/R Modules, Solid State Power Transmitters, Compact Receivers, High Speed Communications. To allow commercial market entry of GaN technology, a tradeoff between high RF performance and low cost is mandatory and a possible solution is represented by GaN-on-Silicon substrate. In this scenario the evaluation of FETs RF performance and losses of passive components are demanding to understand the feasibility of GaN MM
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Grzybowski, R. R., and B. Gingrich. "High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications." Journal of Engineering for Gas Turbines and Power 121, no. 4 (1999): 622–28. http://dx.doi.org/10.1115/1.2818517.

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Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging, and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capaci
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Soref, Richard. "Silicon-based silicon–germanium–tin heterostructure photonics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (2014): 20130113. http://dx.doi.org/10.1098/rsta.2013.0113.

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The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.
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Kyranas, Aristides, and Yannis Papananos. "Passive On-Chip Components for Fully Integrated Silicon RF VCOs." Active and Passive Electronic Components 25, no. 1 (2002): 83–95. http://dx.doi.org/10.1080/08827510211281.

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Mccourt, Martin. "Status of Glass and Silicon-Based Technologies for Passive Components." European Transactions on Telecommunications 4, no. 6 (1993): 685–89. http://dx.doi.org/10.1002/ett.4460040618.

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Bunel, Catherine, Stephane Bellenger, Sebastien Leruez, Lionel Lenoir, and Franck Murray. "Low Profile Silicon Interposer using Passive Integration (PICS)." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 001918–48. http://dx.doi.org/10.4071/2011dpc-wp41.

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Thanks to their 3D structure, the Silicon Capacitors offer drastic improvements in terms of performances compared to the commonly used ceramic and tantalum capacitors. They are also a smart way to reduce the application volume and increase the IP protection level. With the increasing complexity in the die and package designs and ever increasing cost pressure in today's microelectronic industry, IPDIA is offering for a large range of products, customized or standard components, a low cost packaging solution: the Wafer Level Chip Scale Packaging. While wire-bond interface may remain the preferen
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Capelle, Marie, Jérome Billoué, Patrick Poveda, and Gael Gautier. "Study of porous silicon substrates for the monolithic integration of radiofrequency circuits." International Journal of Microwave and Wireless Technologies 6, no. 1 (2013): 39–43. http://dx.doi.org/10.1017/s1759078713001050.

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The silicon/porous silicon (PS) hybrid substrate is an interesting candidate for the monolithic integration of radiofrequency (RF) circuits. Thus, passive components can be integrated on the insulating PS regions close to the active devices integrated on silicon. Regarding silicon, hybrid substrates allow the improvement of RF circuits performances. To demonstrate it, coplanar waveguides have been integrated on glass, silicon, and localized PS substrates. The characterization results show that the substrate losses are reduced with PS.
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Wu, Marcelo, Zhanghua Han, and Vien Van. "Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale." Optics Express 18, no. 11 (2010): 11728. http://dx.doi.org/10.1364/oe.18.011728.

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Dissertations / Theses on the topic "Silicon passive components"

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Ramanathan, Saptharishi. "Understanding and development of dielectric passivated high efficiency silicon solar cells using spin-on solutions." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44771.

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In this work, spin-on processes were used to improve front- and rear-side technologies of solar cells to increase efficiencies to >20 %. A limited source diffusion process was developed using phosphoric acid dopant solutions developed in-house. An optimal emitter was obtained to be used in conjunction with screen-printed contacts. This emitter was used to improve the efficiency of conventional full aluminum back surface field solar cells to 19.6 %. A streamlined process was then developed to fabricate high-efficiency dielectric rear passivated cells in a single high temperature step. This pro
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Ayi-Yovo, Folly Eli. "Évaluation d’un module électro-optique hybride combinant la photonique sur silicium et sur verre pour des applications de multiplexage en longueur d’onde (WDM)." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT046/document.

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La demande sans cesse croissante des besoins des télécommunications a mis en relief les limites intrinsèques de l’électronique. La photonique s’est révélée comme une solution appropriée à ses limitations. STMicroelectronics a développé une plateforme photonique sur silicium dénommée PIC25G permettant une transmission monocanale à 25 Gb/s. Cependant, l’augmentation du débit avec du multiplexage en longueur d’onde (WDM) se heurte à certaines contraintes. La solution suggérée repose sur une approche hybride intégrant la photonique sur silicium et sur verre par échange d’ions développée au laborat
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Perez, Emeric. "Intégration hétérogène de composants passifs silicium pour les convertisseurs de puissance intégrés." Electronic Thesis or Diss., Université Grenoble Alpes, 2025. http://www.theses.fr/2025GRALY001.

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La miniaturisation des systèmes électroniques pose un défi de plus en plus complexe, notamment en ce qui concerne l'alimentation, qui représente une part importante et limitante du circuit. Comme expliqué au chapitre 1, l'intégration des composants passifs reste l'un des principaux obstacles à cette miniaturisation. En effet, les composants passifs intégrés dans la technologie CMOS affichent des densités de capacité deux ou trois ordres de grandeur inférieures à celles des composants discrets. Cette thèse vise à proposer des solutions compactes et intégrables en technologie CMOS en utilisant d
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Boyer, Bertrand. "Comportement en micro-ondes de la charge capacité photo-induite sur un substrat de silicium." Grenoble INPG, 1998. http://www.theses.fr/1998INPG0069.

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La rencontre de l'optique et des microondes a donne naissance a un nouveau domaine : l'optomicroonde qui permet le traitement optique du signal microonde ou le controle optique de composants microondes. Cette these s'inscrit dans ce dernier axe. Lorsque l'on expose un semi-conducteur a une source optique dont les photons ont une energie suffisante, il y a creation dans le materiau de paires electron-trou modifiant la permittivite et la conductivite du substrat. Nous avons mis a profit ce principe pour realiser une charge adaptee accordable. L'extremite ouverte d'un stub depose sur une plaquett
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Haidar, Jihad. "Commande optoélectronique d'atténuateurs, de résonateurs et de filtres microondes réalises sur substrat silicium." Grenoble INPG, 1996. http://www.theses.fr/1996INPG0094.

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La commande optique de dispositifs microondes, qui exploite l'injection optique des porteurs dans un semiconducteur, apporte de nombreux avantages vis-a-vis de l'electronique conventionnelle. La presente etude avait pour objectif d'etendre cette commande a des dispositifs, realisant des fonctions complexes, tels que les attenuateurs, resonateurs et filtres microondes. Les structures etudiees ont ete realisees sur du silicium en technologie ligne microruban. Nous avons exploite principalement la charge complexe induite entre le ruban et le plan de masse par illumination optique. Nous avons demo
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Fu, Po-Han, and 傅柏翰. "Optimization of passive silicon photonic waveguide components over a wide spectral range." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/30729004080903924103.

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博士<br>國立臺灣大學<br>光電工程學研究所<br>105<br>The dissertation consists of two research topics, which are respectively discussed in Chapters 3 and 4. In Chapter 3, we propose the design of a vertical slot waveguide-based optical ring resonator on the silicon-on-insulator (SOI) platform platform with minimized polarization mode dispersion (PMD) in the presence of waveguide dispersion over a wide spectral range. As compared to previous studies with regard to achieving the zero-birefringence condition (ZBC) at a specific wavelength, one additional degree of freedom is used by implementing vertical slot wave
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Lin, Jyun-Min, and 林俊名. "Improvement of Thermal Stability for Silicon-based Microwave Passive Components by Surface Passivation and the Filter Design." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/41127739389670675808.

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碩士<br>國立高雄應用科技大學<br>電子工程系<br>97<br>The thermal stability of Si-based coplanar waveguide (CPW) was improved by various surface passivations. The Si-based CPW filter was also designed, simulated, and fabricated. Ar+ ion implantation was adopted to damage the high-resistance (HR) silicon substrate, which could decrease the insertion loss of the CPW. However, the Si grains were recrystallizd after high temperature process, which increased insertion loss of the CPW again and caused the thermal instability. A rapid thermal annealing (RTA) process was performed after the Ar+ ion implantation to retar
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Books on the topic "Silicon passive components"

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Silicon Components and Processes Self Study: Integrated High-Voltage Transistors and Passive Components. Springer, 2024.

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Book chapters on the topic "Silicon passive components"

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El-Kareh, Badih, and Lou N. Hutter. "Passive Components." In Silicon Analog Components. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-15085-3_8.

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El-Kareh, Badih, and Lou N. Hutter. "Passive Components." In Silicon Analog Components. Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4939-2751-7_8.

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El-Kareh, Badih, and Lou N. Hutter. "Integrated Passive Components." In Silicon Components and Processes Self Study. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-59201-0_2.

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du Preez, Jaco, and Saurabh Sinha. "Millimeter-Wave Silicon Passive Components." In Lecture Notes in Electrical Engineering. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-14655-8_2.

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Dai, Daoxin, Yiwei Xie, and Yaocheng Shi. "Passive Silicon Photonic Integrated Components and Circuits for Optical Communications." In Handbook of Laser Technology and Applications, 2nd ed. CRC Press, 2021. http://dx.doi.org/10.1201/9781003130123-29.

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Burghartz, Joachim. "Passive Components." In Silicon Heterostructure Handbook. CRC Press, 2005. http://dx.doi.org/10.1201/9781420026580.ch3.4.

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Cornetta, Gianluca, David J. Santos, and José Manuel Vázquez. "Passive Components for RF-ICs." In Advances in Wireless Technologies and Telecommunication. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-4666-0083-6.ch008.

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The modern wireless communication industry is demanding transceivers with a high integration level operating in the gigahertz frequency range. This, in turn, has prompted intense research in the area of monolithic passive devices. Modern fabrication processes now provide the capability to integrate onto a silicon substrate inductors and capacitors, enabling a broad range of new applications. Inductors and capacitors are the core elements of many circuits, including low-noise amplifiers, power amplifiers, baluns, mixers, and oscillators, as well as fully-integrated matching networks. While the
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Kouzaev, Guennadi A., M. Jamal Deen, and Natalia K. Nikolova. "Transmission Lines and Passive Components." In Silicon-Based Millimeter-wave Technology - Measurement, Modeling and Applications. Elsevier, 2012. http://dx.doi.org/10.1016/b978-0-12-394298-2.00002-8.

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Benech, Philippe, Jean-Marc Duchamp, Philippe Ferrari, et al. "Integrated Silicon Microwave and Millimeterwave Passive Components and Functions." In Microwave and Millimeter Wave Technologies from Photonic Bandgap Devices to Antenna and Applications. InTech, 2010. http://dx.doi.org/10.5772/9050.

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Dubey, Raghvendra. "Passive and Active Optical Components for Optoelectronics Based on Porous Silicon." In Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three. CRC Press, 2016. http://dx.doi.org/10.1201/b19042-6.

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Conference papers on the topic "Silicon passive components"

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Chandran, Sujith, Yusheng Bian, Won Suk Lee, et al. "Monolithically Integrated High Performance Silicon Nitride Passive Optical Components." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.aw3j.2.

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We demonstrate low-loss SiN passive optical components, encompassing straight and bend waveguides, 1×2MMI, 2×2MMI, directional-coupler, waveguide crossings and cWDM, on a monolithic silicon photonics platform. Statistical hardware performance data validates the mass manufacturability of these building-blocks.
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Massa, N., A. Dalenta, and S. Adamshick. "Understanding Polarization Dependent Loss in Passive Silicon Photonic Components." In 2025 IEEE Conference on Education and Training in Optics and Photonics (ETOP). IEEE, 2025. https://doi.org/10.1109/etop64842.2025.11030644.

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Massa, N., A. Dalenta, and S. Adamshick. "Understanding polarization dependent loss in passive silicon photonic components." In Education and Training in Optics and Photonics (ETOP 2025), edited by Akhil Kallepalli. SPIE, 2025. https://doi.org/10.1117/12.3076811.

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Meng, Jiawei, Senyue Hao, Aaron J. Adkins, Weiyan Zhou, and Chao Zhou. "Optimized Silicon Nitride-Based Passive Components for 850 nm OCT on Photonic Chips." In Frontiers in Optics. Optica Publishing Group, 2024. https://doi.org/10.1364/fio.2024.jw4a.40.

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For optical coherence tomography (OCT) on photonic chips, we designed and validated optimized silicon nitride-based passive components for photonic integrated circuits. Centered at 850 nm, these components offer high sensitivity, axial resolution, and bandwidth stability.
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La Grasta, A., M. I. Gómez-Gómez, A. Griol, et al. "Preliminary results of refractometric sensors based on silicon nitride ring resonators." In Optical Sensors. Optica Publishing Group, 2024. https://doi.org/10.1364/sensors.2024.sw1c.2.

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Silicon-based ring resonators have proven to be essential components for building lab-on-chip systems, thanks to their capability to operate as label-free photonic sensors. Moreover, the possibility of using silicon nitride wafers offer low-loss waveguides across a wide range of wavelengths, from visible to near-infrared. In this work, we report on refractometric sensors based on silicon nitride ring resonators operating in the TE mode around 1310 nm wavelengths. Our preliminary results demonstrate that such a device could be used in the area of biosensing, therefore the aim is to test its sen
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Ulaeto, Sarah B., Gincy Marina Mathew, Jerin K. Pancrecious, and T. P. D. Rajan. "Anticorrosion Performance of Smart Release Bionanocomposite Coatings on Aluminium Alloy 6061." In CONFERENCE 2022. AMPP, 2022. https://doi.org/10.5006/c2022-18189.

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ABSTRACT Protection and maintenance processes are very important in the various sectors utilizing metallic materials. Protection routes can either be passive or active depending on the components of the coating material. Active corrosion protection for metallic substrates is being widely explored with the use of smart release coatings delivering corrosion inhibitors to defective sites upon damage of protective coatings. The incorporation of modified additives into polymers such as epoxy resins offers robust solutions and aims at maximizing the materials’ compatibility for the fabrication of pr
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McGoldrick, Elizabeth, Steven D. Hubbard, Graeme D. Maxwell, and N. Thomas. "Passive optical silica-on-silicon waveguide components." In San Jose - DL tentative, edited by Ka K. Wong. SPIE, 1991. http://dx.doi.org/10.1117/12.24985.

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Day, S., Michael F. Grant, R. Bellerby, et al. "Silica on silicon components for passive optical networks." In Advanced Networks and Services, edited by Robert A. Cryan, P. Nalinaj Fernando, Pierpaolo Ghiggino, and John M. Senior. SPIE, 1995. http://dx.doi.org/10.1117/12.201283.

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Bienstman, P., F. Van Laere, D. Taillaert, et al. "Silicon nanophotonics using deep-UV lithography." In Passive Components and Fiber-based Devices III. SPIE, 2006. http://dx.doi.org/10.1117/12.690594.

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den Dekker, A., A. van Geelen, P. van der Wel, R. Koster, and E. C. Rodenburg. "Passi4: The next Technology for Passive Integration on Silicon." In 2007 Proceedings 57th Electronic Components and Technology Conference. IEEE, 2007. http://dx.doi.org/10.1109/ectc.2007.373914.

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